JPH0438113A - Manufacture of epoxy unit buried with electrode - Google Patents
Manufacture of epoxy unit buried with electrodeInfo
- Publication number
- JPH0438113A JPH0438113A JP2139891A JP13989190A JPH0438113A JP H0438113 A JPH0438113 A JP H0438113A JP 2139891 A JP2139891 A JP 2139891A JP 13989190 A JP13989190 A JP 13989190A JP H0438113 A JPH0438113 A JP H0438113A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductive
- paint
- epoxy
- embedded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004593 Epoxy Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000003973 paint Substances 0.000 claims abstract description 40
- 239000002904 solvent Substances 0.000 claims abstract description 12
- 239000003822 epoxy resin Substances 0.000 claims abstract description 9
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052799 carbon Inorganic materials 0.000 abstract description 6
- 239000003795 chemical substances by application Substances 0.000 abstract description 5
- 239000004020 conductor Substances 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 239000004848 polyfunctional curative Substances 0.000 abstract 2
- 238000000465 moulding Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000007921 spray Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920003020 cross-linked polyethylene Polymers 0.000 description 1
- 239000004703 cross-linked polyethylene Substances 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Landscapes
- Cable Accessories (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、電極埋込みエポキシユニットの製造方法の改
良に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement in a method for manufacturing an epoxy unit with embedded electrodes.
電極埋込みエポキシユニットは、例えば架橋ポリエチレ
ン電カケープルの接続に用いるもので、エポキシ樹脂成
形体の一部に電極を埋込み、固定したものである。The electrode-embedded epoxy unit is used, for example, to connect a crosslinked polyethylene electric cable, and has an electrode embedded and fixed in a part of an epoxy resin molded body.
!掻にはエポキシ樹脂成形体に埋込まれる面に半導電層
が形成されており、その半導電層を形成するには従来、
硬化剤およびカーボンの入ったエボキン系半導電性塗料
基剤に対して、重量比20〜25%の溶剤で希釈した半
導電性塗料を、所望の形状に形成された電極の埋込み面
に、刷毛またはスプレー等で塗布し、その後所定の温度
で硬化させている。しかしながら、この方法では半導電
性塗料の粘度が高い(5万〜lO万センチボイズ)ため
、塗料を電極の埋込み面に塗布した際にその表面に凹凸
が生し、加艷・硬化後、その凹凸が残ってしまう。! A semiconducting layer is formed on the surface of the blade that will be embedded in the epoxy resin molded body, and conventional methods are used to form the semiconducting layer.
A semiconductive paint made by diluting the Evokin semiconductive paint base containing a curing agent and carbon with a solvent at a weight ratio of 20 to 25% is applied with a brush to the embedded surface of the electrode formed into the desired shape. Alternatively, it is applied by spraying or the like and then cured at a predetermined temperature. However, in this method, the viscosity of the semiconductive paint is high (50,000 to 10,000 centivoise), so when the paint is applied to the embedded surface of the electrode, unevenness occurs on the surface. remains.
凹凸を残さないようにするため、半導電性塗料基剤に対
して重量比40〜70%の溶剤で希釈した低粘度の半導
電性塗料を、所望の形状に形成された電極の埋込み面に
“、刷毛またはスプレー等で塗布し、その後所定の温度
で硬化させる方法も試みた。In order to avoid leaving unevenness, a low viscosity semiconductive paint diluted with a solvent at a weight ratio of 40 to 70% of the semiconductive paint base is applied to the embedded surface of the electrode formed into the desired shape. ``We also tried a method of applying with a brush or spray and then curing at a predetermined temperature.
しかしこの方法によると半導電性塗料の粘度が低い(2
万〜5万センチボイズ)ため、半導電性塗料を電極の埋
込み面に塗布した際に塗膜が薄くなり、クランクが入る
危険のあることがわかった。However, with this method, the viscosity of the semiconductive paint is low (2
(50,000 to 50,000 centimeter voids), it was found that when semiconductive paint was applied to the embedded surface of the electrode, the paint film became thin and there was a risk of cranking.
半導電層の表面に凹凸があったり、クランクが入ってい
たりすると、その部分が電気的に大きな弱点となる。If the surface of the semiconducting layer is uneven or has a crank, that area becomes a major electrical weak point.
本発明は、上記の課題を解決した、電極埋込みエポキシ
ユニットの製造方法を提供するもので、その構成は、所
望の形状に形成された電極の埋込み面に、半導電性塗料
基剤に対し重量比20〜25%の溶剤を加えた高粘度の
半導電性塗料を塗布して硬化させた後、さらにその上に
、半導電性塗料基剤に対し重量比40〜70%の溶剤を
加えた低粘度の半導電性塗料を塗布して硬化させて半導
電層を形成し、この電極を金型内に設置してエポキシ樹
脂をモールド成形することを特徴とするものである。The present invention provides a method for manufacturing an epoxy unit with embedded electrodes that solves the above-mentioned problems. After applying and curing a high viscosity semiconductive paint containing 20 to 25% solvent, a solvent of 40 to 70% by weight was added to the semiconductive paint base. The method is characterized in that a low-viscosity semiconductive paint is applied and cured to form a semiconductive layer, and this electrode is placed in a mold and an epoxy resin is molded.
上記の方法によると、電極の埋込み面に高粘度の半導電
性塗料を塗布して硬化させたとき、その表面が幾分凹凸
になるが、その後に低粘度の半導電性塗料を塗布して硬
化させるので、前記した凹凸が低粘度の半導電性塗料で
カバーされ、電極表面をほぼ平滑でしかもクランクが発
生していない面とすることができる。According to the above method, when a high viscosity semiconductive paint is applied to the embedded surface of the electrode and cured, the surface becomes somewhat uneven, but after that, a low viscosity semiconductive paint is applied. Since it is cured, the above-mentioned irregularities are covered with a low-viscosity semiconductive paint, and the electrode surface can be made substantially smooth and free from cranks.
以下、本発明に係る電極埋込みエポキシユニットの製造
方法の実施例を、図面を参照して説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of the method for manufacturing an electrode-embedded epoxy unit according to the present invention will be described below with reference to the drawings.
図−1は本発明を電カケープルの直線接続用の電極埋込
みエポキシユニット11に適用した場合を示す。FIG. 1 shows a case where the present invention is applied to an electrode-embedded epoxy unit 11 for linear connection of an electric cable.
図面において、符号13はケーブル導体側の円筒状の内
部電極で、この内部電極13の外表面および両端面と内
面の一部にわたって、半導電層15を形成する。この半
導電層15の形成手順は次のとおりである。すなわち、
先ず、硬化剤およびカーボンの入ったエポキシ系半導電
性塗料基剤を、重量比20%の溶剤(トルエン)で希釈
して高粘度の半導電性塗料とした。この高粘度の半導電
性塗料を、内部電極13の埋込み面に刷毛またはスプレ
ーで塗布し、所定の温度で硬化させた。In the drawings, reference numeral 13 denotes a cylindrical internal electrode on the cable conductor side, and a semiconductive layer 15 is formed over the outer surface, both end surfaces, and part of the inner surface of this internal electrode 13. The procedure for forming this semiconductive layer 15 is as follows. That is,
First, an epoxy semiconductive paint base containing a curing agent and carbon was diluted with a solvent (toluene) at a weight ratio of 20% to obtain a high viscosity semiconductive paint. This highly viscous semiconductive paint was applied to the embedded surface of the internal electrode 13 with a brush or spray, and cured at a predetermined temperature.
次に、硬化剤およびカーボンの入ったエポキシ系半導電
性塗料基剤を、重量比50%の溶剤(トルエン)で希釈
して低粘度の半導電性塗料とした。Next, the epoxy semiconductive paint base containing a curing agent and carbon was diluted with a solvent (toluene) at a weight ratio of 50% to obtain a low viscosity semiconductive paint.
この低粘度の半導電性塗料を、前記の高粘度の半導電性
塗料によって形成された半導電層の上に、刷毛またはス
プレーで塗布し、所定の温度で硬化させた。これにより
所望の厚さの半導電層15を形成した。なお、1回の塗
布・硬化で所望の塗布厚さが得られない場合は、塗布・
硬化を繰り返すことにより対応した。This low-viscosity semiconductive paint was applied by brush or spray onto the semiconductive layer formed by the high-viscosity semiconductive paint, and was cured at a predetermined temperature. As a result, a semiconducting layer 15 having a desired thickness was formed. In addition, if the desired coating thickness cannot be obtained with one application and curing, repeat the application and curing.
The solution was to repeat curing.
上記の方法によって形成された半導電層15は、表面に
クランクがなく、しかも表面の最大凹凸を30μ鴎に抑
制することができた。これは、従来がら行われてきた方
法、すなわち、硬化剤およびカーボンの入ったエポキシ
系半導電性塗料基剤を、重量比20%のトルエンで希釈
し、その半導電性塗料を電極の埋込み面に塗布して加熱
硬化させた場合に、その表面の凹凸が60〜100μ階
であったのに比べ、格段の成果である。The semiconductive layer 15 formed by the above method had no cranks on the surface, and the maximum unevenness of the surface could be suppressed to 30 μm. This is done using the conventional method, that is, diluting an epoxy semiconductive paint base containing a curing agent and carbon with toluene at a weight ratio of 20%, and applying the semiconductive paint to the embedded surface of the electrode. This is a remarkable result compared to the case where the surface roughness was 60 to 100 microns when applied to the surface and cured by heating.
なお、図−1における符号17a、17bはそれぞれケ
ーブルシース側の外部電極で、これ等の埋込み面にも内
部電極13に形成した半導電層15と同質のものを形成
しである。Note that reference numerals 17a and 17b in FIG. 1 are external electrodes on the cable sheath side, and the same material as the semiconducting layer 15 formed on the internal electrode 13 is formed on the buried surface of these.
以上説明した3個の電極を金型(図示せず)にセントし
、金型内にエポキシ樹脂19を注入して直線接続用の電
極埋込みエポキシユニット1を作製した。The three electrodes described above were placed in a mold (not shown), and epoxy resin 19 was injected into the mold to produce an electrode-embedded epoxy unit 1 for linear connection.
図−2は本発明を電カケープルの終端接続用の電極埋込
みエポキシユニット21に適用した実施例を示す。FIG. 2 shows an embodiment in which the present invention is applied to an electrode-embedded epoxy unit 21 for terminal connection of a power cable.
図面において、23はケーブル導体側の内部電極、25
はケーブルシース側の外部電極で、それぞれ埋込み面に
半導電層15が形成されており、エポキシ樹脂19に埋
め込まれて、終端接続用の電極埋込みエポキシユニット
21が形成されている。In the drawing, 23 is an internal electrode on the cable conductor side, 25
are external electrodes on the cable sheath side, each of which has a semiconducting layer 15 formed on its embedded surface, and is embedded in an epoxy resin 19 to form an electrode embedded epoxy unit 21 for terminal connection.
本発明において、高粘度の半導電性塗料を、塗料基剤に
対し重量比20〜25%の溶剤を加えたものに限定し、
また低粘度の半導電性塗料を、塗料基剤に対し重量比4
0〜70%の溶剤を加えたものに限定したのは実験結果
による。すなわち、実験は、前記の希釈度の異なる二つ
の半導電性塗料を組み合わせて、半導電層を形成した場
合、その表面の最大凹凸が30μm以下に収まっており
、かつ、そのとき表面にクランクが発生しないことを条
件として行い、その結果によって上記の限定をしたので
ある。In the present invention, the high viscosity semiconductive paint is limited to one in which a solvent is added at a weight ratio of 20 to 25% to the paint base,
In addition, a low viscosity semiconductive paint is applied at a weight ratio of 4 to the paint base.
The limitation to those containing 0 to 70% of solvent was based on experimental results. In other words, the experiment showed that when a semiconductive layer was formed by combining the two semiconductive paints with different dilutions, the maximum unevenness on the surface was 30 μm or less, and at that time, no cranks were formed on the surface. This was done on the condition that it would not occur, and the above limitations were made based on the results.
以上説明したように、本発明は、所望の形状に形成され
た電極の埋込み面に、高粘度の半導電性塗料を塗布・硬
化させた後、低粘度の半導電性塗料を塗布・硬化させて
半導電層を形成したので、電極表面に表面がほぼ平滑で
、かつクラックの入っていない半導電層を形成でき、電
気的に安定した性能を有する電極埋込みエポキシユニッ
トが容易に得られる効果がある。As explained above, the present invention involves coating and curing a high viscosity semiconductive paint on the embedded surface of an electrode formed into a desired shape, and then applying and curing a low viscosity semiconductive paint. Since a semiconducting layer is formed on the electrode surface, a semiconducting layer with an almost smooth surface and no cracks can be formed on the electrode surface, and an electrode-embedded epoxy unit with electrically stable performance can be easily obtained. be.
図−1は本発明の製造方法を電カケープルの直線接続用
の電極埋込みエポキシユニ7)に適用した実施例の断面
図、図−2は同しく終端接続用の電極埋込みエポキシユ
ニットに適用した実施例の断面図である。
11:直線接続用電極埋込みポキシュニソト13:ケー
ブル導体側の内部電極
15:半導電層
17a、 17b :ケーブルシース側の外部電極19
:エポキシ樹脂
21:終端接続用電極埋込みボキシュニ7)23:ケー
ブル導体側の内部電極
25:ケーブルシース側の外部電極Figure 1 is a sectional view of an embodiment in which the manufacturing method of the present invention is applied to an electrode-embedded epoxy unit 7) for straight connection of power cables, and Figure-2 is an embodiment in which the manufacturing method of the present invention is applied to an electrode-embedded epoxy unit for terminal connection. FIG. 3 is an example cross-sectional view. 11: Embedded electrode for linear connection 13: Internal electrode on cable conductor side 15: Semiconductive layer 17a, 17b: External electrode 19 on cable sheath side
: Epoxy resin 21: Terminal connection electrode embedded box 7) 23: Internal electrode on cable conductor side 25: External electrode on cable sheath side
Claims (1)
性塗料基剤に対し重量比20〜25%の溶剤を加えた高
粘度の半導電性塗料を塗布して硬化させた後、さらにそ
の上に、半導電性塗料基剤に対し重量比40〜70%の
溶剤を加えた低粘度の半導電性塗料を塗布して硬化させ
て半導電層を形成し、この電極を金型内に設置してエポ
キシ樹脂をモールド成形することを特徴とする電極埋込
みエポキシユニットの製造方法。1. After applying and curing a high viscosity semiconductive paint made by adding a solvent at a weight ratio of 20 to 25% to the semiconductive paint base on the embedded surface of the electrode formed in the desired shape, Furthermore, a low-viscosity semi-conductive paint made by adding a solvent in a weight ratio of 40 to 70% to the semi-conductive paint base is applied and cured to form a semi-conductive layer, and this electrode is molded into a mold. 1. A method for manufacturing an epoxy unit with embedded electrodes, characterized in that the epoxy unit is installed inside the unit and molded with epoxy resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2139891A JPH0438113A (en) | 1990-05-31 | 1990-05-31 | Manufacture of epoxy unit buried with electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2139891A JPH0438113A (en) | 1990-05-31 | 1990-05-31 | Manufacture of epoxy unit buried with electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0438113A true JPH0438113A (en) | 1992-02-07 |
Family
ID=15256015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2139891A Pending JPH0438113A (en) | 1990-05-31 | 1990-05-31 | Manufacture of epoxy unit buried with electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0438113A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1496576A2 (en) | 2003-07-09 | 2005-01-12 | Pfisterer Kontaktsysteme GmbH & Co. KG | Device for electrical connection with a power supply line for medium or high voltage and process for manufacturing an insulatng portion of such a device |
-
1990
- 1990-05-31 JP JP2139891A patent/JPH0438113A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1496576A2 (en) | 2003-07-09 | 2005-01-12 | Pfisterer Kontaktsysteme GmbH & Co. KG | Device for electrical connection with a power supply line for medium or high voltage and process for manufacturing an insulatng portion of such a device |
EP1496576A3 (en) * | 2003-07-09 | 2008-03-26 | Pfisterer Kontaktsysteme GmbH & Co. KG | Device for electrical connection with a power supply line for medium or high voltage and process for manufacturing an insulatng portion of such a device |
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