JPH0436268U - - Google Patents
Info
- Publication number
- JPH0436268U JPH0436268U JP1990077611U JP7761190U JPH0436268U JP H0436268 U JPH0436268 U JP H0436268U JP 1990077611 U JP1990077611 U JP 1990077611U JP 7761190 U JP7761190 U JP 7761190U JP H0436268 U JPH0436268 U JP H0436268U
- Authority
- JP
- Japan
- Prior art keywords
- laser diode
- semiconductor laser
- light emitting
- optical
- converts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims 1
- 230000004907 flux Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Couplings Of Light Guides (AREA)
Description
第1図はこの考案の一実施例の3つの光導波路
を採用した半導体レーザダイオードの斜視図で、
第2図は上面図である。第3図は従来の半導体レ
ーザダイオードの斜視図で、第4図は断面図であ
る。 1……半導体レーザダイオード、2a,2b,
2c……表面電極、3a,3b,3c……ボンデ
イングワイヤ、4a,4b,4c……光導波路、
5a,5b,5c……発光部、6a,6b,6c
……光束、7……光フアイバ、8……交点。
を採用した半導体レーザダイオードの斜視図で、
第2図は上面図である。第3図は従来の半導体レ
ーザダイオードの斜視図で、第4図は断面図であ
る。 1……半導体レーザダイオード、2a,2b,
2c……表面電極、3a,3b,3c……ボンデ
イングワイヤ、4a,4b,4c……光導波路、
5a,5b,5c……発光部、6a,6b,6c
……光束、7……光フアイバ、8……交点。
Claims (1)
- 電気信号を光信号に変更する半導体レーザダイ
オードの光導出機構において、1つのレーザダイ
オード素子に複数の光導波路、またそれに対応す
る複数の発光部を有することを特徴とする半導体
レーザーダイオード。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990077611U JPH0436268U (ja) | 1990-07-20 | 1990-07-20 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990077611U JPH0436268U (ja) | 1990-07-20 | 1990-07-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0436268U true JPH0436268U (ja) | 1992-03-26 |
Family
ID=31620158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1990077611U Pending JPH0436268U (ja) | 1990-07-20 | 1990-07-20 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0436268U (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009117746A (ja) * | 2007-11-09 | 2009-05-28 | Anritsu Corp | 外部共振器型半導体レーザ装置 |
JP2012195545A (ja) * | 2011-03-18 | 2012-10-11 | Seiko Epson Corp | テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 |
JP2013104804A (ja) * | 2011-11-15 | 2013-05-30 | Seiko Epson Corp | 半導体短パルス発生装置、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 |
-
1990
- 1990-07-20 JP JP1990077611U patent/JPH0436268U/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009117746A (ja) * | 2007-11-09 | 2009-05-28 | Anritsu Corp | 外部共振器型半導体レーザ装置 |
JP2012195545A (ja) * | 2011-03-18 | 2012-10-11 | Seiko Epson Corp | テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 |
JP2013104804A (ja) * | 2011-11-15 | 2013-05-30 | Seiko Epson Corp | 半導体短パルス発生装置、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 |