JPH0436262U - - Google Patents

Info

Publication number
JPH0436262U
JPH0436262U JP1990078414U JP7841490U JPH0436262U JP H0436262 U JPH0436262 U JP H0436262U JP 1990078414 U JP1990078414 U JP 1990078414U JP 7841490 U JP7841490 U JP 7841490U JP H0436262 U JPH0436262 U JP H0436262U
Authority
JP
Japan
Prior art keywords
light
lead frame
molded body
primary
primary molded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1990078414U
Other languages
English (en)
Other versions
JPH0749815Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990078414U priority Critical patent/JPH0749815Y2/ja
Priority to US07/731,780 priority patent/US5214495A/en
Publication of JPH0436262U publication Critical patent/JPH0436262U/ja
Application granted granted Critical
Publication of JPH0749815Y2 publication Critical patent/JPH0749815Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Description

【図面の簡単な説明】
第１図は本考案の一実施例に係る表面実装型光
結合装置の斜視図、第２図は同じくその平面図、
第３図は第２図のＸ−Ｘ断面図、第４図は同じく
そのＹ−Ｙ断面図、第５図は同じくその一次モー
ルド体を示す断面図、第６図は本考案の他の実施
例に係る表面実装型結合装置の斜視図、第７図は
従来の表面実装型光結合装置の平面図、第８図は
第７図のＡ−Ａ断面図、第９図は同じくそのＢ−
Ｂ断面図、第１０図は同じくその一次モールド体
を示す図であつて、同図ａは正面図、同図ｂは平
面図、同図ｃは断面図である。 １……発光素子、２……受光素子、３……発光
側リードフレーム、４……受光側リードフレーム
、６……発光側一次モールド体、７……受光側一
次モールド体、８……二次モールド体。

Claims (1)

    【実用新案登録請求の範囲】
  1. 発光素子と、該発光素子が搭載される発光側リ
    ードフレームと、これらが透光性樹脂にて一次モ
    ールドしてなる発光側一次モールド体と、受光素
    子と、該受光素子が搭載される受光側リードフレ
    ームと、これらが前記透光性樹脂にて一次モール
    ドしてなる受光側一次モールド体と、前記発光側
    一次モールド体および受光側一次モールド体を光
    学的に結合するよう遮光性樹脂にて二次モールド
    してなる二次モールド体とから構成され、前記発
    光側リードフレームおよび受光側リードフレーム
    は、表面実装できるよう前記二次モールド体内で
    各一次モールド体の背面側に折曲して引き出され
    たことを特徴とする表面実装型光結合装置。
JP1990078414U 1990-07-23 1990-07-23 表面実装型光結合装置 Expired - Lifetime JPH0749815Y2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1990078414U JPH0749815Y2 (ja) 1990-07-23 1990-07-23 表面実装型光結合装置
US07/731,780 US5214495A (en) 1990-07-23 1991-07-18 Photointerrupter and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990078414U JPH0749815Y2 (ja) 1990-07-23 1990-07-23 表面実装型光結合装置

Publications (2)

Publication Number Publication Date
JPH0436262U true JPH0436262U (ja) 1992-03-26
JPH0749815Y2 JPH0749815Y2 (ja) 1995-11-13

Family

ID=13661382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990078414U Expired - Lifetime JPH0749815Y2 (ja) 1990-07-23 1990-07-23 表面実装型光結合装置

Country Status (2)

Country Link
US (1) US5214495A (ja)
JP (1) JPH0749815Y2 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5647034A (en) * 1994-10-03 1997-07-08 Matsushita Electric Works, Ltd. Operation displaying semiconductor switch
TW353236B (en) * 1996-10-22 1999-02-21 Rohm Co Ltd Photo interruptor
US6288492B1 (en) 2000-06-14 2001-09-11 Trw Inc. Head lamp switch with twilight sentinel control
JP4801243B2 (ja) * 2000-08-08 2011-10-26 ルネサスエレクトロニクス株式会社 リードフレームおよびそれを用いて製造した半導体装置並びにその製造方法
JP2005026546A (ja) * 2003-07-04 2005-01-27 Toshiba Corp フォトインタラプタとその製造方法及び光結合装置とその製造方法
JP2005064140A (ja) * 2003-08-08 2005-03-10 Toshiba Corp フォトインタラプタ及びその製造方法
DE102004038422B3 (de) * 2004-07-30 2006-01-12 Schefenacker Vision Systems Germany Gmbh Sensoreinrichtung, Verwendung einer Sensoreinrichtung sowie Fahrzeugleuchte
KR100631901B1 (ko) * 2005-01-31 2006-10-11 삼성전기주식회사 Ｌｅｄ 패키지 프레임 및 이를 채용하는 ｌｅｄ 패키지
JP2006269777A (ja) * 2005-03-24 2006-10-05 Rohm Co Ltd 面実装型フォトインタラプタとその製造方法
TWI373149B (en) * 2005-03-24 2012-09-21 Rohm Co Ltd Surface mount type photo interrupter and method for manufacturing the same
JP2007027621A (ja) * 2005-07-21 2007-02-01 Rohm Co Ltd 面実装型フォトインタラプタとその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6193682A (ja) * 1984-10-15 1986-05-12 Sharp Corp ホトインタラプタの製造法
JPS6278887A (ja) * 1985-10-01 1987-04-11 Sharp Corp ホトインタラプタ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1789005A1 (de) * 1968-09-20 1972-01-20 Siemens Ag Eingekapseltes Halbleiterbauelement mit wenigstens teilweise aus Sintermetall und Kunststoff bestehenden Bauteilen
DE2806167C2 (de) * 1978-02-14 1986-05-15 Siemens AG, 1000 Berlin und 8000 München Hochspannungsfester Optokoppler
FR2436505A1 (fr) * 1978-09-12 1980-04-11 Radiotechnique Compelec Dispositif optoelectronique a emetteur et recepteur couples
US4694183A (en) * 1985-06-25 1987-09-15 Hewlett-Packard Company Optical isolator fabricated upon a lead frame
US4633582A (en) * 1985-08-14 1987-01-06 General Instrument Corporation Method for assembling an optoisolator and leadframe therefor
JPH0638514B2 (ja) * 1985-11-21 1994-05-18 日本電気株式会社 フオトインタラプタ
JP3039651B2 (ja) * 1988-07-13 2000-05-08 キヤノン株式会社 強誘電性カイラルスメクチック液晶組成物及びこれを有する液晶素子
JPH0224387A (ja) * 1988-07-13 1990-01-26 Canon Inc 液晶組成物およびこれを含む液晶素子
US5081520A (en) * 1989-05-16 1992-01-14 Minolta Camera Kabushiki Kaisha Chip mounting substrate having an integral molded projection and conductive pattern

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6193682A (ja) * 1984-10-15 1986-05-12 Sharp Corp ホトインタラプタの製造法
JPS6278887A (ja) * 1985-10-01 1987-04-11 Sharp Corp ホトインタラプタ

Also Published As

Publication number Publication date
JPH0749815Y2 (ja) 1995-11-13
US5214495A (en) 1993-05-25

Similar Documents

Publication Publication Date Title
JPH0436262U (ja)
JPH02101556U (ja)
JPS6176982U (ja)
JPH0415250U (ja)
JPH01171052U (ja)
JPH0286154U (ja)
JPH0244359U (ja)
JPH0244358U (ja)
JPH03104766U (ja)
JPS6448058U (ja)
JPH02101554U (ja)
JPH0163140U (ja)
JPS62201870U (ja)
JPH041506U (en) Optical link
JPH0295305U (ja)
JPH0369259U (ja)
JPH02101555U (ja)
JPS61157344U (ja)
JPH02114951U (ja)
JPH0396861U (ja)
JPS62188164U (ja)
JPH0351856U (ja)
JPH0345665U (ja)
JPS6289166U (ja)
JPH01118463U (ja)

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term