JPH0436035Y2 - - Google Patents
Info
- Publication number
- JPH0436035Y2 JPH0436035Y2 JP20317086U JP20317086U JPH0436035Y2 JP H0436035 Y2 JPH0436035 Y2 JP H0436035Y2 JP 20317086 U JP20317086 U JP 20317086U JP 20317086 U JP20317086 U JP 20317086U JP H0436035 Y2 JPH0436035 Y2 JP H0436035Y2
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- point metal
- metal body
- low melting
- temperature fuse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002844 melting Methods 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 230000008018 melting Effects 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 14
- 230000004907 flux Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims 1
- 239000000919 ceramic Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Description
【考案の詳細な説明】
（産業上の利用分野）
本考案は基板型温度ヒユーズの改良に関するも
のである。[Detailed Description of the Invention] (Field of Industrial Application) The present invention relates to an improvement of a substrate type temperature fuse.
（従来の技術）
基板型温度ヒユーズ、はセラミツクス板等の耐
熱性絶縁基板の片面上に一対の電極を設け、電極
間に低融点金属体を橋設し、低融点金属体上にフ
ラツクス層を設け、絶縁基板片面の全面上に絶縁
層、例えばエポキシ樹脂モールド層を被覆した構
成である。(Prior art) A substrate-type temperature fuse is a method in which a pair of electrodes is provided on one side of a heat-resistant insulating substrate such as a ceramic plate, a low-melting point metal is bridged between the electrodes, and a flux layer is placed on the low-melting point metal. The structure is such that the entire surface of one side of the insulating substrate is coated with an insulating layer, for example, an epoxy resin mold layer.
而して、その使用要領は、保護すべき電気機器
に添着し、その機器が過電流により異常発熱する
と、その発生熱を受熱して低融点金属体が溶融
し、この溶融低融点金属が既に溶融したフラツク
スとの共存下、その表面張力によつて球状化分断
し、その分断によつて機器への共電を遮断するこ
とにある。 The procedure for using it is that it is attached to electrical equipment to be protected, and when that equipment abnormally heats up due to overcurrent, the low melting point metal body receives the generated heat and melts, and this molten low melting point metal is already In coexistence with molten flux, the surface tension of the flux causes it to become spheroidized and fragmented, and this fragmentation cuts off the electrical current to the equipment.
（解決しようとする問題点）
しかしながら、この作動時、フラツクスの溶融
熱膨張による過大な内圧発生があり、この内圧の
ために絶縁層と絶縁基板との界面が剥離し、溶融
低融点金属が絶縁基板の周縁から漏出し、この漏
出金属が周囲に飛散して温度ヒユーズ近傍の回路
部分までもが損傷を受けるような危険性がある。(Problem to be solved) However, during this operation, an excessive internal pressure is generated due to the melting thermal expansion of the flux, and this internal pressure causes the interface between the insulating layer and the insulating substrate to separate, causing the molten low-melting point metal to become insulated. There is a risk that the leaked metal will leak from the periphery of the board and be scattered around, damaging even circuit parts near the temperature fuse.
本考案の目的は、かかる溶融低融点金属の漏出
を充分に軽減できる基板型温度ヒユーズを提供す
ることにある。 An object of the present invention is to provide a substrate-type temperature fuse that can sufficiently reduce the leakage of such molten low-melting point metal.
（問題点を解決するための手段）
本考案に係る基板型温度ヒユーズは、絶縁基板
の片面上に一対の電極を設け、電極間に低融点金
属体を橋設し、低融点金属体上にフラツクス層を
設けた温度ヒユーズにおいて、上記低融点金属体
端を接合せる電極部分の近傍の絶縁基板箇所に上
記低融点金属体の溶融物に対する流動阻止凹部を
設けたことを特徴とする構成である。(Means for solving the problem) The substrate type temperature fuse according to the present invention has a pair of electrodes provided on one side of an insulating substrate, a low melting point metal body is bridged between the electrodes, and a low melting point metal body is bridged between the electrodes. The temperature fuse provided with a flux layer is characterized in that a recess for preventing flow of the molten material of the low melting point metal body is provided in a portion of the insulating substrate near the electrode portion to which the ends of the low melting point metal body are joined. .
（実施例） 以下、図面により本考案を説明する。(Example) The present invention will be explained below with reference to the drawings.
第１図は本考案に係る基板型温度ヒユーズを示
す上面説明図、第２図は第１図における−断
面説明図である。 FIG. 1 is an explanatory top view showing a substrate-type temperature fuse according to the present invention, and FIG. 2 is an explanatory cross-sectional view of FIG. 1.
第１図並びに第２図において、１は耐熱性に秀
れた絶縁基板であり、通常、セラミツクス板を用
いる、２，２はセラミツクス板の片面上に設けた
一対の電極であり、導電性ペースト（銅・銀等の
金属粒子のガラスフリツトとの混合物）の印刷・
焼付けによつて形成できる。３，３は各電極に接
続したリード線である。４は電極間に橋設した低
融点金属体であり、低融点金属体と電極との間は
溶接により接合してある。この接合箇所Ｊ，Ｊは
電極先端から50μm〜２mm好ましくは0.2mm〜１mm
隔てた位置に設けてあり、２０，２０は電極先端
部を示している。５，５は上記接合箇所近傍のセ
ラミツクス板箇所に設けた凹部であり、電極にほ
ぼ平行であり、その長さは低融点金属体４の巾
ｄの２〜４倍である。この凹部５，５はレーザー
照射により設けることができ、この場合、その凹
部の形状は励起パルスの周期に基づく間隔の多数
孔となり、通常孔間隔は約200μm、孔深さは約
300μm、孔径は約100μmである。６は低融点金属
体上に設けたフラツクス層であり、通常、ロジン
を主成分とする組成物を用いる。上記した凹部に
はこのフラツクスを充填してある。７はセラミツ
クス板片面の全面上に被覆した硬化性樹脂の絶縁
層であり、例えば、過熱硬化性エポキシ樹脂のモ
ールド被覆を使用できる。 In FIGS. 1 and 2, numeral 1 is an insulating substrate with excellent heat resistance, and usually a ceramic plate is used. Reference numerals 2 and 2 are a pair of electrodes provided on one side of the ceramic plate, and conductive paste is used. (mixture of metal particles such as copper and silver with glass frit)
Can be formed by baking. 3, 3 are lead wires connected to each electrode. Reference numeral 4 denotes a low melting point metal body provided as a bridge between the electrodes, and the low melting point metal body and the electrodes are joined by welding. The joint points J and J are 50μm to 2mm from the electrode tip, preferably 0.2mm to 1mm.
They are provided at separate positions, and reference numerals 20 and 20 indicate the tips of the electrodes. Reference numerals 5 and 5 designate recesses provided in the ceramic plate near the joint, which are approximately parallel to the electrodes, and whose length is 2 to 4 times the width d of the low melting point metal body 4. The recesses 5, 5 can be formed by laser irradiation, and in this case, the shape of the recesses is a large number of holes with a spacing based on the period of the excitation pulse, and the hole spacing is usually about 200 μm and the hole depth is about
300 μm, and the pore diameter is approximately 100 μm. Reference numeral 6 denotes a flux layer provided on the low melting point metal body, and usually a composition containing rosin as a main component is used. The above-mentioned recesses are filled with this flux. Reference numeral 7 denotes an insulating layer of a curable resin coated on the entire surface of one side of the ceramic plate, and for example, a molded coating of a heat-curable epoxy resin can be used.
上記基板型温度ヒユーズは保護すべき電気機器
に添着して使用する。而して、機器の異常発熱に
よりフラツクス層並びに低融点金属体が溶融し、
フラツクスの熱膨張のために内圧が発生し、特
に、フラツクス層端部にはエツジ効果のために大
なる内圧が発生し、溶融した低融点金属体がその
端部を起点としてセラミツクス板縁端に向かつて
流出しようとする。しかしながら、溶融した低融
点金属体の電極に対する凝結性が高く第１図にお
いてＡ方向の流出は電極先端部２０の存在のため
に阻止でき、また、Ｂ方向の流出に対しては凹部
５が流動阻止機能を発揮し、Ｂ方向の流出も充分
に防止できる。従って、溶融した低融点金属体の
流出を上記何れの方向に対しても良好に防止でき
る。 The substrate-type temperature fuse is used by attaching it to the electrical equipment to be protected. As a result, the flux layer and the low-melting point metal body melt due to abnormal heat generation in the equipment.
Internal pressure is generated due to the thermal expansion of the flux, and in particular, a large internal pressure is generated at the edges of the flux layer due to the edge effect, and the molten low-melting metal body starts from that edge and moves toward the edge of the ceramic plate. The head tries to leak out. However, since the molten low-melting point metal has a high tendency to coagulate on the electrode, the outflow in the direction A in FIG. It exhibits a blocking function and can sufficiently prevent outflow in the B direction. Therefore, the outflow of the molten low melting point metal body can be effectively prevented in any of the above directions.
（考案の効果）
上述した通り、本考案に係る基板型温度ヒユー
ズにおいては、作動時での溶融低融点金属体の周
囲への流出をよく防止でき、温度ヒユーズ近傍の
健全な回路部分への溶融金属の飛散を排除でき、
その回路部分お損傷をよく回避できる。(Effects of the invention) As mentioned above, the substrate-type temperature fuse according to the invention can effectively prevent molten low-melting point metal from flowing out into the surroundings during operation, and prevent melting to healthy circuit parts near the temperature fuse. Eliminates metal scattering,
That circuit part can be well avoided from being damaged.
なお、本考案は絶縁基板の片面に低融点金属体
と抵抗体（膜上抵抗）とを設ける構成の基板型温
度ヒユーズ、または、絶縁基板の片面には低融点
金属体を、他面には抵抗体をそれぞれ設ける構成
の基板型温度ヒユーズにも適用できる。 The present invention is a substrate-type temperature fuse that has a low melting point metal body and a resistor (on-film resistance) on one side of an insulating substrate, or a low melting point metal body on one side of an insulating substrate and a resistor on the other side. The present invention can also be applied to a substrate-type temperature fuse in which each resistor is provided.
第１図は本考案に係る基板型温度ヒユーズを示
す上面説明図、第２図は第１図における−断
面説明図である。
図において、１は絶縁基板、２，２は電極、４
は低融点金属体、５，５は溶融物流動阻止凹部、
６はフラツクス層、７は絶縁層である。
FIG. 1 is an explanatory top view showing a substrate-type temperature fuse according to the present invention, and FIG. 2 is an explanatory cross-sectional view of FIG. 1. In the figure, 1 is an insulating substrate, 2, 2 are electrodes, 4
is a low melting point metal body, 5, 5 is a melt flow prevention recess,
6 is a flux layer, and 7 is an insulating layer.
Claims (1)
に低融点金属体を橋設し、低融点金属体上にフラ
ツクス層を設けた温度ヒユーズにおいて、上記低
融点金属体端を接合せる電極部分の近傍の絶縁基
板箇所に上記低融点金属体の溶融物に対する流動
阻止凹部を設けたことを特徴とする基板型温度ヒ
ユーズ。 In a temperature fuse in which a pair of electrodes is provided on one side of an insulating substrate, a low melting point metal body is bridged between the electrodes, and a flux layer is provided on the low melting point metal body, an electrode portion to which the ends of the low melting point metal bodies are joined. 1. A substrate-type temperature fuse, characterized in that a recess for preventing flow of the melted material of the low-melting point metal body is provided in a portion of the insulating substrate near the insulating substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20317086U JPH0436035Y2 (en) | 1986-12-26 | 1986-12-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20317086U JPH0436035Y2 (en) | 1986-12-26 | 1986-12-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63106044U JPS63106044U (en) | 1988-07-08 |
| JPH0436035Y2 true JPH0436035Y2 (en) | 1992-08-26 |
Family
ID=31168247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20317086U Expired JPH0436035Y2 (en) | 1986-12-26 | 1986-12-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0436035Y2 (en) |
-
1986
- 1986-12-26 JP JP20317086U patent/JPH0436035Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63106044U (en) | 1988-07-08 |
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