JPH04357692A - Thin film heater and manufacture thereof - Google Patents
Thin film heater and manufacture thereofInfo
- Publication number
- JPH04357692A JPH04357692A JP16948691A JP16948691A JPH04357692A JP H04357692 A JPH04357692 A JP H04357692A JP 16948691 A JP16948691 A JP 16948691A JP 16948691 A JP16948691 A JP 16948691A JP H04357692 A JPH04357692 A JP H04357692A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- heater
- layer
- conductive
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000010408 film Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 9
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 20
- 229910052709 silver Inorganic materials 0.000 abstract description 20
- 239000004332 silver Substances 0.000 abstract description 20
- 239000010949 copper Substances 0.000 abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052802 copper Inorganic materials 0.000 abstract description 10
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000002390 adhesive tape Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 230000000873 masking effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 41
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000006104 solid solution Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- VGHOIMZYOPHDCL-UHFFFAOYSA-N [F].O=[Sn]=O Chemical compound [F].O=[Sn]=O VGHOIMZYOPHDCL-UHFFFAOYSA-N 0.000 description 1
- WJRBCQPZSXAZLH-UHFFFAOYSA-N [O-2].[In+3].[F].[O-2].[O-2].[In+3] Chemical compound [O-2].[In+3].[F].[O-2].[O-2].[In+3] WJRBCQPZSXAZLH-UHFFFAOYSA-N 0.000 description 1
- QXKVKKPMTXYNGZ-UHFFFAOYSA-N [P].[Sn](=O)=O Chemical compound [P].[Sn](=O)=O QXKVKKPMTXYNGZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- WMHSAFDEIXKKMV-UHFFFAOYSA-N oxoantimony;oxotin Chemical compound [Sn]=O.[Sb]=O WMHSAFDEIXKKMV-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007666 vacuum forming Methods 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、導電性薄膜層を備えた
薄膜ヒータに関するもので、詳しくは冷凍ショーケース
や自動車の窓ガラス等に利用される薄膜ヒータの電極端
子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film heater having a conductive thin film layer, and more particularly to an electrode terminal of a thin film heater used in a refrigeration showcase, an automobile window glass, or the like.
【０００２】0002
【従来の技術】従来薄膜ヒータは、冷凍ショーケースや
自動車の窓ガラス等に利用されてきたが、近年スピード
メータやナビゲーションシステム等の車載用情報ディス
プレイの液晶表示デバイスとして利用されることが多く
なった。[Prior Art] Thin film heaters have traditionally been used in refrigeration showcases, automobile window glass, etc., but in recent years they have been increasingly used as liquid crystal display devices for in-vehicle information displays such as speedometers and navigation systems. Ta.
【０００３】このような薄膜ヒータは、基板上に透明導
電性薄膜層を備え、同薄膜層に電圧を供給するための電
極端子を備えているものが多い。同薄膜ヒータ１０ａは
、図４に示すように基板１ａの上に真空成膜法によりＩ
ＴＯ膜等の透明導電性薄膜層２ａが形成され、続いて真
空槽内から取り出され図５に示すように大気中でスクリ
ーン印刷法等により銀ペースト層５ａが電極端子の所定
のパターンに塗布され、同時にリード線６ａが接続され
、更に熱処理が行われ、絶縁インク７ａが塗布され図６
のように形成されている。[0003] Such thin film heaters often include a transparent conductive thin film layer on a substrate and electrode terminals for supplying voltage to the thin film layer. As shown in FIG. 4, the thin film heater 10a is manufactured using a vacuum film forming method on a substrate 1a.
A transparent conductive thin film layer 2a such as a TO film is formed, and then it is taken out from the vacuum chamber and a silver paste layer 5a is applied to a predetermined pattern of the electrode terminal by screen printing or the like in the atmosphere as shown in FIG. At the same time, the lead wire 6a is connected, further heat treatment is performed, and insulating ink 7a is applied.
It is formed like this.
【０００４】前記薄膜ヒータの等価回路は、図７、図８
に示すように電極部Ａと発熱部Ｂとからなり、それぞれ
の抵抗値をＲａ、Ｒｂとすると理想的にはＲａ《Ｒｂが
望ましい。即ち、薄膜ヒータが車載用液晶ディスプレイ
等に使用される場合は、液晶自体に温度低下に伴う動作
速度の低下という欠点もあり、耐環境性が要求され昇温
特性の良いものが望まれている。低温始動性を良くし、
昇温特性を改善するために発熱部Ｂの抵抗値Ｒｂを小さ
くすると、相対的に電極部Ａの抵抗値Ｒａにかかる電圧
が増加し電極部Ａが過熱されることになる。以上のこと
から、導電性薄膜層２ａに直接銀ペースト層５ａ等を接
触させ電極を形成した薄膜ヒータでは、電極部Ａの焼損
が発生しやすく断線するという問題があった。The equivalent circuit of the thin film heater is shown in FIGS. 7 and 8.
As shown in the figure, it consists of an electrode part A and a heat generating part B, and if the respective resistance values are Ra and Rb, it is ideally desirable that Ra<<Rb. In other words, when thin-film heaters are used in automotive liquid crystal displays, etc., the liquid crystal itself has the disadvantage of a drop in operating speed as the temperature drops, so environmental resistance is required, and a heater with good temperature rise characteristics is desired. . Improves low temperature startability,
If the resistance value Rb of the heat generating part B is reduced in order to improve the temperature increase characteristic, the voltage applied to the resistance value Ra of the electrode part A will increase relatively, and the electrode part A will be overheated. From the above, in a thin film heater in which an electrode is formed by directly contacting the conductive thin film layer 2a with a silver paste layer 5a or the like, there is a problem that the electrode portion A is easily burnt out and disconnected.
【０００５】[0005]
【発明が解決しようとする課題】前記薄膜ヒータの電極
部Ａの抵抗値Ｒａの値は、導電性薄膜層２ａと銀ペース
ト層５ａとの間の接触抵抗値に大きく左右されていると
考えられ、本発明は薄膜ヒータの電極部の抵抗値が発熱
部の抵抗値に比べて充分に小さいもの、即ち導電性薄膜
層２ａと銀ペースト層５ａとの間の接触抵抗値を充分に
小さくした薄膜ヒータを提供すると共に、同薄膜ヒータ
を製造する方法を提供することを目的とする。It is believed that the resistance value Ra of the electrode portion A of the thin film heater is largely influenced by the contact resistance value between the conductive thin film layer 2a and the silver paste layer 5a. The present invention is directed to a thin film heater in which the resistance value of the electrode part is sufficiently smaller than the resistance value of the heat generating part, that is, the thin film heater has a sufficiently small contact resistance value between the conductive thin film layer 2a and the silver paste layer 5a. It is an object of the present invention to provide a heater and a method for manufacturing the same thin film heater.
【０００６】[0006]
【課題を解決するための手段】本願請求項１の発明は、
前記課題を解決するために基板上に導電性薄膜層を備え
た薄膜ヒータであって、ヒータに設けられる電極端子は
、真空成膜法により基板上に導電性薄膜層、金属薄膜層
が順次積層され、金属薄膜層の上に導電ペースト層が塗
布され、導電ペースト層にリード線が取り付けられる構
成を備えることを特徴とする。[Means for solving the problem] The invention of claim 1 of the present application is as follows:
In order to solve the above problems, a thin film heater is provided with a conductive thin film layer on a substrate, and the electrode terminal provided on the heater is made by sequentially laminating a conductive thin film layer and a metal thin film layer on the substrate by a vacuum deposition method. A conductive paste layer is applied on the metal thin film layer, and a lead wire is attached to the conductive paste layer.
【０００７】請求項２の発明は、同薄膜ヒータの製造方
法であって、基板上に真空成膜法により少なくとも１層
の導電性薄膜層を形成し、その上に電極端子のパターン
で真空成膜法により金属薄膜層を形成し、金属薄膜層の
上に導電ペースト層を塗布し、導電ペースト層にリード
線を取り付けることを特徴とするものである。The invention of claim 2 is a method for manufacturing the same thin film heater, which comprises forming at least one conductive thin film layer on a substrate by a vacuum film forming method, and forming an electrode terminal pattern thereon by vacuum forming. The method is characterized in that a metal thin film layer is formed by a film method, a conductive paste layer is applied on the metal thin film layer, and a lead wire is attached to the conductive paste layer.
【０００８】本発明における基板は、ポリエチレンテレ
フタレート、ポリエチレンサルフアイド等の合成樹脂フ
ィルムや、ガラス、シート等絶縁性の平板であれば良い
が、薄膜ヒータがディスプレイ装置等に用いられる際は
、透明フィルムであることを要求されることが多い。The substrate in the present invention may be a synthetic resin film such as polyethylene terephthalate or polyethylene sulfide, or an insulating flat plate such as glass or sheet, but when the thin film heater is used for a display device etc., a transparent film may be used. is often required to be.
【０００９】導電性薄膜層としては、酸化インジウム（
Ｉｎ２Ｏ３）、酸化インジウムにドーパントとして錫（
Ｓｎ）または弗素（Ｆ）が用いられた酸化インジウム−
錫固溶体（ＩＴＯ）、酸化インジウム−弗素固溶体、二
酸化錫（ＳｎＯ２）、二酸化錫にドーパントとして弗素
（Ｆ）、リン（Ｐ）、またはアンチモン（Ｓｂ）を用い
た二酸化錫−弗素固溶体、二酸化錫−リン固溶体、二酸
化錫−アンチモン固溶体を用いることができ、更には金
（Ａｕ）、銀（Ａｇ）、銅（Ｃｕ）、クロム（Ｃｒ）、
パラジウム（Ｐｄ）、ロジウム（Ｒｈ）またはこれらの
合金からなる（合金）薄膜を用いることができる。更に
、前記酸化導電膜と金属薄膜との積層薄膜を用いること
も可能である。As the conductive thin film layer, indium oxide (
In2O3), indium oxide with tin as a dopant (
Indium oxide using Sn) or fluorine (F)
Tin solid solution (ITO), indium oxide-fluorine solid solution, tin dioxide (SnO2), tin dioxide-fluorine solid solution using fluorine (F), phosphorus (P), or antimony (Sb) as a dopant in tin dioxide, tin dioxide- Phosphorus solid solution, tin dioxide-antimony solid solution can be used, and further gold (Au), silver (Ag), copper (Cu), chromium (Cr),
A thin film made of palladium (Pd), rhodium (Rh), or an alloy thereof can be used. Furthermore, it is also possible to use a laminated thin film of the oxidized conductive film and a metal thin film.
【００１０】これら導電性薄膜層は、真空蒸着法、スパ
ッタリング、イオンプレーティング等の真空成膜法によ
り基板上に形成される。[0010] These conductive thin film layers are formed on the substrate by vacuum deposition methods such as vacuum evaporation, sputtering, and ion plating.
【００１１】更に、導電性薄膜層の上に電極端子のパタ
ーンで積層される金属薄膜層としては、銅（Ｃｕ）、ア
ルミニウム（Ａｌ）、ニッケル（Ｎｉ）、銀（Ａｇ）、
クロム（Ｃｒ）等の低抵抗の材料を用いることができ、
同じく前記真空成膜法により形成される。Furthermore, the metal thin film layer laminated in the pattern of the electrode terminal on the conductive thin film layer includes copper (Cu), aluminum (Al), nickel (Ni), silver (Ag),
Low resistance materials such as chromium (Cr) can be used,
Similarly, it is formed by the vacuum film forming method described above.
【００１２】0012
【作用】本発明における薄膜ヒータは、その電極端子が
基板上に導電性薄膜層、その上に金属薄膜層、導電ペー
スト層を順次積層され導電ペースト層にリード線を取り
付ける構成を有するので、電極部における電気抵抗値を
充分に小さくすることが可能となる。[Function] The thin film heater according to the present invention has a structure in which the electrode terminal has a conductive thin film layer on a substrate, a metal thin film layer, and a conductive paste layer are sequentially laminated on the substrate, and a lead wire is attached to the conductive paste layer. It becomes possible to sufficiently reduce the electrical resistance value in the part.
【００１３】また、基板の上に導電性薄膜層、金属薄膜
層を順次積層するのに真空成膜法を利用し、その上に導
電ペースト層をスクリーン印刷法等により塗布するので
、導電性薄膜層と導電ペースト層との間の接触抵抗値を
充分に小さくすることが可能となる。[0013] Furthermore, since a vacuum film forming method is used to sequentially laminate a conductive thin film layer and a metal thin film layer on a substrate, and a conductive paste layer is applied thereon by a screen printing method or the like, a conductive thin film layer is formed. It becomes possible to sufficiently reduce the contact resistance value between the layer and the conductive paste layer.
【００１４】[0014]
【実施例】以下、実施例について図面に基づき説明する
。[Example] Hereinafter, an example will be explained based on the drawings.
【００１５】図１に本発明よりなる薄膜ヒータ１０を示
す。薄膜ヒータ１０は、基板１の一方の面の全面に銀薄
膜２とＩＴＯ薄膜３とが積層された導電性薄膜層を形成
し、その電極部Ａには銅薄膜４を形成し、更に銀ペース
ト５を積層するとともにリード線６を取りつけた後、絶
縁インク７を塗布した構成を有する。FIG. 1 shows a thin film heater 10 according to the present invention. The thin film heater 10 has a conductive thin film layer in which a silver thin film 2 and an ITO thin film 3 are laminated on the entire surface of one side of a substrate 1, a copper thin film 4 is formed on the electrode part A, and a silver paste is further formed on the electrode part A of the thin film heater 10. It has a structure in which insulating ink 7 is applied after laminating layers 5 and attaching lead wires 6.
【００１６】同薄膜ヒータ１０は、車載用液晶ディスプ
レイに使用されるもので昇温特性を良くするため、発熱
部Ｂの抵抗値が小さくなるように導電性薄膜層に銀薄膜
２を使用し、ＩＴＯ薄膜３を保護層に使用している。導
電性薄膜層の厚さには特に制限ないが、ここでは銀薄膜
２は５０ÅでＩＴＯ薄膜３は３００Åである。The thin film heater 10 is used for an in-vehicle liquid crystal display, and in order to improve temperature rise characteristics, a silver thin film 2 is used as the conductive thin film layer so that the resistance value of the heat generating part B is small. An ITO thin film 3 is used as a protective layer. There is no particular restriction on the thickness of the conductive thin film layer, but here the thickness of the silver thin film 2 is 50 Å and the thickness of the ITO thin film 3 is 300 Å.
【００１７】電極部Ａは、電極のパターンでＩＴＯ薄膜
３の上に銅薄膜４が形成され、銅薄膜４の上には銀ペー
スト５が塗布されると共に、リード線６が取りつけられ
る。銀ペースト５の上には、絶縁インク７が塗布されて
いる。In the electrode section A, a copper thin film 4 is formed on an ITO thin film 3 in an electrode pattern, a silver paste 5 is applied on the copper thin film 4, and a lead wire 6 is attached. Insulating ink 7 is applied onto the silver paste 5.
【００１８】次に薄膜ヒータ１０の製造手順を説明する
。先ず透明フィルム基板１としてポリエチレンテレフタ
レートフィルムを準備し、スパッタリング真空槽内の陽
極側に設置し、真空槽内を約１×１０−５Ｔｏｒｒ程度
まで排気した後、２×１０−３Ｔｏｒｒまでアルゴンガ
スを導入する。この状態で、まず銀薄膜２を約５０Åの
厚さに形成し、さらにその上側全面にＩＴＯ薄膜３を約
３００Åの厚さに形成した。この結果図２に示す透明導
電性フィルムが得られた。Next, the manufacturing procedure of the thin film heater 10 will be explained. First, a polyethylene terephthalate film is prepared as a transparent film substrate 1, and placed on the anode side in a sputtering vacuum chamber. After evacuating the vacuum chamber to about 1 x 10-5 Torr, argon gas is introduced to a temperature of 2 x 10-3 Torr. do. In this state, first, a silver thin film 2 was formed to a thickness of about 50 Å, and then an ITO thin film 3 was formed to a thickness of about 300 Å on the entire upper surface thereof. As a result, a transparent conductive film shown in FIG. 2 was obtained.
【００１９】次に、大気中でマスキング材として粘着性
テープ８を電極部Ａ以外の位置に張り合わせた。その状
態で再度スパッタ真空槽内に設置し、約３０００Åの銅
薄膜４をスパッタリング成膜法で形成した。この結果図
３に示す状態となった。Next, an adhesive tape 8 was applied as a masking material to a position other than the electrode portion A in the atmosphere. In this state, it was placed in the sputtering vacuum chamber again, and a thin copper film 4 of about 3000 Å was formed by sputtering film formation. As a result, the state shown in FIG. 3 was obtained.
【００２０】その後、粘着テープを剥離し、リード線６
の取付けのために銅薄膜４の上に銀ペースト５をスクリ
ーン印刷し、熱処理を行い、さらに絶縁インク７を塗布
し図１に示す透明薄膜ヒータ１０を完成した。After that, the adhesive tape is peeled off and the lead wire 6 is removed.
For attachment, silver paste 5 was screen printed on copper thin film 4, heat treated, and insulating ink 7 was applied to complete transparent thin film heater 10 shown in FIG.
【００２１】本実施例では、リード線６の取付けに銀ペ
ースト５を用いたが、銀ペーストの替わりに電気メッキ
や化学メッキにより電極部を厚くし、ハンダ付けにより
リード線６を取り付けても良い。In this embodiment, silver paste 5 was used to attach the lead wire 6, but instead of silver paste, the electrode portion may be thickened by electroplating or chemical plating, and the lead wire 6 may be attached by soldering. .
【００２２】また、透明導電膜の成膜法としてスパッタ
リング法を用いたが、他の真空状着法やイオンプレーテ
ィング法であっても良い。Furthermore, although sputtering was used as a method for forming the transparent conductive film, other vacuum deposition methods or ion plating methods may be used.
【００２３】[0023]
【発明の効果】以上の構成よりなる本願発明方法により
製造した薄膜ヒータは、電極部の電気抵抗値を充分に小
さくすることが可能となるので、車載用液晶ディスプレ
イ等に使用する際に要求される低温始動性の良い、昇温
特性が改善され電極部の断線が発生しない表示デバイス
を提供するという効果を奏する。[Effects of the Invention] The thin film heater manufactured by the method of the present invention having the above structure can sufficiently reduce the electrical resistance value of the electrode portion, which is required when used in in-vehicle liquid crystal displays, etc. This has the effect of providing a display device that has good low-temperature startability, improved temperature rise characteristics, and does not cause disconnection of electrode portions.
【００２４】更に、電極部の抵抗値が減少するため発熱
部の電流が均一に流れ、温度分布の一定な薄膜ヒータが
得られるという効果もある。Furthermore, since the resistance value of the electrode portion is reduced, current flows uniformly in the heat generating portion, and a thin film heater with a constant temperature distribution can be obtained.
【００２５】[0025]
【図１】本願発明による薄膜ヒータの要部断面拡大図で
ある。FIG. 1 is an enlarged sectional view of a main part of a thin film heater according to the present invention.
【図２】本願発明による薄膜ヒータの透明導電性フィル
ムの断面拡大図である。FIG. 2 is an enlarged cross-sectional view of a transparent conductive film of a thin film heater according to the present invention.
【図３】本願発明による薄膜ヒータの透明導電性フィル
ムの上に銅薄膜を形成した状態の断面拡大図である。FIG. 3 is an enlarged cross-sectional view of a thin film heater according to the present invention in which a copper thin film is formed on a transparent conductive film.
【図４】従来の薄膜ヒータの透明導電性フィルムの断面
拡大図である。FIG. 4 is an enlarged cross-sectional view of a transparent conductive film of a conventional thin film heater.
【図５】従来の薄膜ヒータの透明導電性フィルムの上に
銀ペースト層が塗布されリード線が接続された断面拡大
図である。FIG. 5 is an enlarged cross-sectional view of a conventional thin film heater in which a silver paste layer is applied on a transparent conductive film and lead wires are connected.
【図６】従来の薄膜ヒータの要部断面拡大図である。FIG. 6 is an enlarged sectional view of a main part of a conventional thin film heater.
【図７】薄膜ヒータの説明用全体斜視図である。FIG. 7 is an explanatory overall perspective view of the thin film heater.
【図８】薄膜ヒータの説明用等価回路図である。FIG. 8 is an explanatory equivalent circuit diagram of a thin film heater.
１ 基板 ２ 銀薄膜 ４ 銅薄膜 1 Board 2 Silver thin film 4 Copper thin film
Claims (2)
ータであって、ヒータに設けられる電極端子は、真空成
膜法により基板上に導電性薄膜層、金属薄膜層が順次積
層され、金属薄膜層の上に導電ペースト層が塗布され、
導電ペースト層にリード線が取り付けられる構成を備え
ることを特徴とする薄膜ヒータ。1. A thin film heater comprising a conductive thin film layer on a substrate, in which an electrode terminal provided on the heater is formed by sequentially laminating a conductive thin film layer and a metal thin film layer on the substrate by a vacuum film forming method. A conductive paste layer is applied on top of the metal thin film layer,
A thin film heater characterized by having a structure in which a lead wire is attached to a conductive paste layer.
ータの製造方法であって、基板上に真空成膜法により少
なくとも１層の導電性薄膜層を形成し、その上に電極端
子のパターンで真空成膜法により金属薄膜層を形成し、
金属薄膜層の上に導電ペースト層を塗布し、導電ペース
ト層にリード線を取り付けることを特徴とする薄膜ヒー
タの製造方法。2. A method for manufacturing a thin film heater having a conductive thin film layer on a substrate, the method comprising forming at least one conductive thin film layer on the substrate by a vacuum film forming method, and forming an electrode terminal on the thin film heater. A thin metal film layer is formed using the vacuum deposition method in a pattern,
A method for manufacturing a thin film heater, comprising applying a conductive paste layer on a metal thin film layer and attaching lead wires to the conductive paste layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16948691A JPH04357692A (en) | 1991-03-27 | 1991-03-27 | Thin film heater and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16948691A JPH04357692A (en) | 1991-03-27 | 1991-03-27 | Thin film heater and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04357692A true JPH04357692A (en) | 1992-12-10 |
Family
ID=15887427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16948691A Pending JPH04357692A (en) | 1991-03-27 | 1991-03-27 | Thin film heater and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04357692A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06283261A (en) * | 1993-01-27 | 1994-10-07 | Mitsui Toatsu Chem Inc | Panel heater and manufacture thereof |
| JPH0850967A (en) * | 1993-12-09 | 1996-02-20 | Methode Electronics Inc | Printing plastic circuit,contactor and manufacturing processthereof |
| JP2002056953A (en) * | 2000-06-01 | 2002-02-22 | Misuzu Kogyo:Kk | Connection method of lead member and heat generating element having lead member |
| KR20020088908A (en) * | 2001-05-22 | 2002-11-29 | 주식회사 제이디텍 | Surface type heating body by conductive material |
| JP2004093841A (en) * | 2002-08-30 | 2004-03-25 | Optrex Corp | Panel heater for liquid crystal display element, and liquid crystal display |
| US9493906B2 (en) | 2003-11-20 | 2016-11-15 | Koninklijke Philips N.V. | Thin-film heating element |
| JPWO2019189767A1 (en) * | 2018-03-29 | 2020-04-30 | 三菱電機ビルテクノサービス株式会社 | Heating device, heating method, and refrigerant recovery method |
-
1991
- 1991-03-27 JP JP16948691A patent/JPH04357692A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06283261A (en) * | 1993-01-27 | 1994-10-07 | Mitsui Toatsu Chem Inc | Panel heater and manufacture thereof |
| JPH0850967A (en) * | 1993-12-09 | 1996-02-20 | Methode Electronics Inc | Printing plastic circuit,contactor and manufacturing processthereof |
| JP2002056953A (en) * | 2000-06-01 | 2002-02-22 | Misuzu Kogyo:Kk | Connection method of lead member and heat generating element having lead member |
| KR20020088908A (en) * | 2001-05-22 | 2002-11-29 | 주식회사 제이디텍 | Surface type heating body by conductive material |
| JP2004093841A (en) * | 2002-08-30 | 2004-03-25 | Optrex Corp | Panel heater for liquid crystal display element, and liquid crystal display |
| US9493906B2 (en) | 2003-11-20 | 2016-11-15 | Koninklijke Philips N.V. | Thin-film heating element |
| JPWO2019189767A1 (en) * | 2018-03-29 | 2020-04-30 | 三菱電機ビルテクノサービス株式会社 | Heating device, heating method, and refrigerant recovery method |
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