JPH04352379A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPH04352379A JPH04352379A JP15590591A JP15590591A JPH04352379A JP H04352379 A JPH04352379 A JP H04352379A JP 15590591 A JP15590591 A JP 15590591A JP 15590591 A JP15590591 A JP 15590591A JP H04352379 A JPH04352379 A JP H04352379A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- ceramic substrate
- semiconductor device
- printed
- conductor pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004020 conductor Substances 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000000919 ceramic Substances 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0284—Details of three-dimensional rigid printed circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Structure Of Printed Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、半導体装置に関し、
特に、セラミック基板表面上に導体パターンが形成され
た半導体装置及びその製造方法に関するものである。[Industrial Application Field] The present invention relates to a semiconductor device.
In particular, the present invention relates to a semiconductor device in which a conductor pattern is formed on the surface of a ceramic substrate and a method for manufacturing the same.
【０００２】0002
【従来の技術】図３は、従来の半導体装置のセラミック
基板表面に導体パターンが印刷された領域を示す平面図
であり、図４は、図３のＩＶ−ＩＶ線における断面図で
ある。2. Description of the Related Art FIG. 3 is a plan view showing a region in which a conductor pattern is printed on the surface of a ceramic substrate of a conventional semiconductor device, and FIG. 4 is a sectional view taken along the line IV--IV in FIG.
【０００３】図において、１１はセラミック基板、１２
は金属導体パターン、１３はオーバーガラス、１４は抵
抗体、１５はスルーホールである。In the figure, 11 is a ceramic substrate, 12
13 is a metal conductor pattern, 13 is an overglass, 14 is a resistor, and 15 is a through hole.
【０００４】次に、上記半導体装置におけるセラミック
基板表面への導体パターンの印刷工程について説明する
。Next, the process of printing a conductor pattern on the surface of a ceramic substrate in the semiconductor device will be explained.
【０００５】先ず、アルミナ等による液状のセラミック
を薄く延ばし、該液状セラミックを乾燥して薄板状のセ
ラミック基板を得る。次に、該薄板状セラミック基板に
スルーホール形成用の型を当て、型抜きして穴を空ける
。そして、穴が空けられた薄板状のセラミック基板を焼
成して、スルーホール１５を備えたセラミック基板１１
を成形する。First, a liquid ceramic made of alumina or the like is spread thin, and the liquid ceramic is dried to obtain a thin ceramic substrate. Next, a die for forming a through hole is applied to the thin ceramic substrate and the die is cut out to make a hole. Then, the ceramic substrate 11 with the through holes 15 is fired by firing the thin ceramic substrate with the holes.
to form.
【０００６】次に、上記スルーホール１５を備えたセラ
ミック基板１１上に、所望のパターンを備えたマスクパ
ターンをマスク材として、Ａｇ／Ｐｔ等の金属による金
属導体パターン１２を印刷し、更に、セラミック基板１
１上に、所望のパターンを備えたマスクパターンをマス
ク材として抵抗体１４を印刷する。Next, a metal conductor pattern 12 made of a metal such as Ag/Pt is printed on the ceramic substrate 11 having the above-mentioned through holes 15 using a mask pattern having a desired pattern as a mask material. Board 1
1, a resistor 14 is printed using a mask pattern having a desired pattern as a mask material.
【０００７】最後に、上記金属導体パターン１２の周囲
を覆うように、上記金属導体パターン１２の縁から上記
セラミック基板１１にかけてオーバーガラス１３を印刷
し、更に、上記抵抗体１４を覆うように上記セラミック
基板１１上にオーバーガラス１３を印刷する。Finally, an overglass 13 is printed from the edge of the metal conductor pattern 12 to the ceramic substrate 11 so as to cover the periphery of the metal conductor pattern 12, and the ceramic substrate 13 is further printed to cover the resistor 14. An overglass 13 is printed on the substrate 11.
【０００８】[0008]
【発明が解決しようとする課題】従来の半導体装置にお
けるセラミック基板１１表面上への導体パターンの印刷
は、上記のように、表面が平坦に成形されたセラミック
基板表面に、所望のパターンに形成されたマスクパター
ンをマスクとして、導体を印刷することによって行われ
ていた。しかしながら、隣接する導体間の間隔が狭くな
るように導体パターン１２を印刷しようとした場合、近
接する導体同士が接触して短絡したり、また、導体の使
用量によって形成される導体パターンの寸法に誤差を生
じたりしていた。また、高周波用誘電体セラミック基板
を用いた場合は、隣接する導体を流れる高周波信号同士
の相互インダクタンスが高周波特性に悪影響を与え、装
置特性を低下させるという問題を発生していた。[Problems to be Solved by the Invention] Printing of a conductive pattern on the surface of a ceramic substrate 11 in a conventional semiconductor device is performed by printing a conductive pattern in a desired pattern on the surface of a ceramic substrate whose surface is formed flat, as described above. This was done by printing conductors using a mask pattern as a mask. However, if an attempt is made to print the conductor pattern 12 so that the spacing between adjacent conductors is narrow, the adjacent conductors may come into contact with each other and cause a short circuit, or the dimensions of the conductor pattern formed due to the amount of conductors used may It was causing errors. Furthermore, when a high-frequency dielectric ceramic substrate is used, mutual inductance between high-frequency signals flowing through adjacent conductors has an adverse effect on high-frequency characteristics, resulting in a problem in that device characteristics are degraded.
【０００９】この発明は上記のような問題点を解消する
ためになされたもので、導体パターンにおける導体間の
短絡を防止し、導体パターンの寸法精度が向上し、更に
、高周波特性が改善された半導体装置を得ること、およ
びその製造方法を得ることを目的とする。[0009] This invention was made to solve the above-mentioned problems, and it prevents short circuits between conductors in a conductor pattern, improves the dimensional accuracy of the conductor pattern, and further improves high frequency characteristics. The purpose of the present invention is to obtain a semiconductor device and a method for manufacturing the same.
【００１０】0010
【課題を解決するための手段】この発明にかかる半導体
装置は、セラミック基板表面に備えられた凸部パターン
に導体パターンを形成したものである。A semiconductor device according to the present invention has a conductor pattern formed on a convex pattern provided on the surface of a ceramic substrate.
【００１１】この発明にかかる半導体装置の製造方法は
、導体パターンに対応した凸部パターンを基板表面に備
えたセラミック基板を成形し、次いで、該凸部パターン
に対応したマスクパターンを形成し、該マスクパターン
をマスク材として上記凸部パターン上に導体を印刷する
ようにしたものである。[0011] A method for manufacturing a semiconductor device according to the present invention involves molding a ceramic substrate having a convex pattern corresponding to a conductor pattern on the surface of the substrate, then forming a mask pattern corresponding to the convex pattern; A conductor is printed on the convex pattern using a mask pattern as a mask material.
【００１２】0012
【作用】この発明における半導体装置においては、セラ
ミック基板表面に備えられた凸部パターン上に導体パタ
ーンが形成されており、導体パターンの導体間には凸部
パターンの凸部に挟まれて形成された凹部空間が存在す
るため、凸部パターンのパターン密度が密になっても（
導体パターンにおける隣接する導体同士の間隔が狭くな
っても）導体同士は接触せず、また、導体に高周波信号
を流した際に発生する電磁界が、誘電率が空気中のそれ
よりも高いセラミック基板内で強くなることから、上記
凹部の存在によって隣接する導体間の電気的距離を長く
することができる。[Operation] In the semiconductor device according to the present invention, a conductive pattern is formed on the convex pattern provided on the surface of the ceramic substrate, and a conductive pattern is formed between the conductors of the conductive pattern by being sandwiched between the convex portions of the convex pattern. Because there is a concave space, even if the pattern density of the convex pattern becomes dense (
Even if the distance between adjacent conductors in the conductor pattern becomes narrower, the conductors do not come into contact with each other, and the electromagnetic field generated when a high-frequency signal is passed through the conductor is a ceramic material whose dielectric constant is higher than that of air. The presence of the recess allows the electrical distance between adjacent conductors to be increased since it is strengthened within the substrate.
【００１３】また、この発明における半導体装置の製造
方法においては、セラミック基板表面の凸部パターン上
に導体を印刷するため、印刷する導体の量が変化しても
導体は凸部パターン上からはみ出すことが殆ど無く、導
体同士の接触が防止でき、パターン寸法精度の高い導体
パターンを形成することができる。Furthermore, in the method for manufacturing a semiconductor device according to the present invention, since the conductor is printed on the convex pattern on the surface of the ceramic substrate, the conductor does not protrude from the convex pattern even if the amount of printed conductor changes. There is almost no contact between conductors, and contact between conductors can be prevented, and a conductor pattern with high pattern dimensional accuracy can be formed.
【００１４】[0014]
【実施例】以下、この発明の一実施例を図について説明
する。図１は、この発明の一実施例による半導体装置に
おけるセラミック基板上に導体パターンを印刷した領域
を示す平面図であり、図２は、図１のＩＩ−ＩＩ線にお
ける断面図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a plan view showing a region in which a conductor pattern is printed on a ceramic substrate in a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a sectional view taken along the line II--II in FIG. 1.
【００１５】図において、１はセラミック基板、１ａは
セラミック基板表面に形成された凸部パターン、２は導
体パターン、３はオーバーガラス、４は抵抗体、５はス
ルーホールである。In the figure, 1 is a ceramic substrate, 1a is a convex pattern formed on the surface of the ceramic substrate, 2 is a conductor pattern, 3 is an overglass, 4 is a resistor, and 5 is a through hole.
【００１６】次に、上記の半導体装置におけるセラミッ
ク基板表面への導体パターンの印刷工程について説明す
る。Next, the process of printing a conductor pattern on the surface of the ceramic substrate in the above semiconductor device will be explained.
【００１７】先ず、アルミナ等による液状のセラミック
を薄く延ばし、乾燥して薄板状のセラミック基板を得る
。次いで、該薄板状のセラミック基板にスルーホール形
成用の型を当て、型抜きして穴を空け、同時に、金属導
体パターンが印刷される凸部パターンを形成するための
パターンを備えた型を該薄板状のセラミック基板表面に
当て、型押しして基板表面に凸部パターンを形成する。
次いで、この薄板状のセラミック基板を焼成することに
より、スルーホール５と表面に凸部パターン１ａとを備
えたセラミック基板１が成形される。First, a liquid ceramic made of alumina or the like is spread thin and dried to obtain a thin ceramic substrate. Next, a die for forming through-holes is applied to the thin ceramic substrate, and a hole is made by cutting the plate, and at the same time, a die equipped with a pattern for forming a convex pattern on which a metal conductor pattern is printed is placed. It is applied to the surface of a thin ceramic substrate and stamped to form a convex pattern on the substrate surface. Next, by firing this thin ceramic substrate, a ceramic substrate 1 having through holes 5 and a convex pattern 1a on the surface is formed.
【００１８】次に、上記セラミック基板１の表面に形成
された凸部パターン１ａに対応し、所望のパターンに設
計されたマスクパターンをマスク材として、Ａｇ／Ｐｔ
等の金属によって凸部パターン１ａ上に金属導体パター
ン２を印刷する。更に、適当なマスクパターンをマスク
材として基板１表面の凸部に抵抗体４を印刷する。Next, using a mask pattern designed as a desired pattern corresponding to the convex pattern 1a formed on the surface of the ceramic substrate 1 as a mask material, Ag/Pt
A metal conductor pattern 2 is printed on the convex pattern 1a using a metal such as the like. Further, resistors 4 are printed on the convex portions of the surface of the substrate 1 using an appropriate mask pattern as a mask material.
【００１９】最後に、上記金属導体パターン２上の一部
にオーバーガラス３を印刷し、更に、上記抵抗体４を覆
うようにオーバーガラス３を印刷する。Finally, an overglass 3 is printed on a part of the metal conductor pattern 2, and the overglass 3 is further printed so as to cover the resistor 4.
【００２０】尚、上記半導体装置では、抵抗体４もセラ
ミック基板１表面の凸部に形成されてけおり、導電パタ
ーン２と抵抗体４との接触を防止し、装置特性の安定化
が図られている。In the semiconductor device described above, the resistor 4 is also formed on the convex portion of the surface of the ceramic substrate 1 to prevent contact between the conductive pattern 2 and the resistor 4, thereby stabilizing the device characteristics. There is.
【００２１】このような本実施例の半導体装置では、導
体パターン２がセラミック基板１の表面の凸部パターン
１ａ上に印刷され、該導電体パターン２上にオーバーガ
ラス３を印刷されているため、導体パターン２の導体間
には、隣接する凸部によって形成された凹部空間が存在
し、導体パターンのパターン密度が密になっても、導体
同士の接触による短絡を発生することなく、また、上記
凸部間に存在する凹部によって、隣接する導体間の電気
的距離が長くなり、導体間を流れる高周波信号の相互イ
ンダクタンスが低減して高周波特性を改善することがで
きる。In the semiconductor device of this embodiment, the conductor pattern 2 is printed on the convex pattern 1a on the surface of the ceramic substrate 1, and the overglass 3 is printed on the conductor pattern 2. There is a recessed space formed by adjacent convex parts between the conductors of the conductor pattern 2, so that even if the pattern density of the conductor pattern becomes dense, short circuits due to contact between the conductors do not occur, and the above-mentioned The recesses existing between the protrusions lengthen the electrical distance between adjacent conductors, reduce mutual inductance of high frequency signals flowing between the conductors, and improve high frequency characteristics.
【００２２】また、このような本実施例の半導体装置の
製造方法では、予めセラミック基板を成形する際に、導
体パターンが印刷される基板表面の領域を凸部パターン
１ａとして形成し、該凸部パターン１ａ上に導体パター
ン２を印刷するので、印刷する導体の量が変動しても凸
部パターン１ａのパターン幅をはみ出して、導体パター
ンが形成されることが殆んどなく、導体間の短絡の無い
、寸法精度に優れた導体パターンを備えた半導体装置を
製造することができる。Furthermore, in the method for manufacturing a semiconductor device according to this embodiment, when a ceramic substrate is molded in advance, a region of the substrate surface where a conductor pattern is printed is formed as a convex pattern 1a, and the convex portion Since the conductor pattern 2 is printed on the pattern 1a, even if the amount of printed conductor changes, the conductor pattern will hardly be formed extending beyond the pattern width of the convex pattern 1a, and there will be no short circuit between the conductors. Accordingly, it is possible to manufacture a semiconductor device having a conductor pattern with excellent dimensional accuracy without any defects.
【００２３】[0023]
【発明の効果】以上のように、この発明にかかる半導体
装置によれば、セラミック基板表面の凸部パターン上に
形成された導体パターンを備えているので、導体パター
ンにおける隣接する導体間の短絡が防止できるとともに
、導体パターンのパターン寸法精度を向上でき、更に、
装置の高周波特性を改善できる効果がある。As described above, since the semiconductor device according to the present invention includes a conductor pattern formed on a convex pattern on the surface of a ceramic substrate, short circuits between adjacent conductors in the conductor pattern can be avoided. It is possible to prevent this, and improve the pattern dimensional accuracy of the conductor pattern.
This has the effect of improving the high frequency characteristics of the device.
【００２４】また、この発明にかかる半導体装置の製造
方法によれば、セラミック基板表面に形成された凸部パ
ターン上に導体パターンを印刷するようにしたので、印
刷する導体の量が変化しても導体パターンの寸法変化が
生じにくくなり、パターン寸法誤差が無く、隣接する導
体間の短絡の減少した、信頼性の高い半導体装置を得る
ことがてきる効果がある。Further, according to the method for manufacturing a semiconductor device according to the present invention, since the conductor pattern is printed on the convex pattern formed on the surface of the ceramic substrate, even if the amount of printed conductor changes, This has the effect of making it possible to obtain a highly reliable semiconductor device in which dimensional changes in the conductor pattern are less likely to occur, there are no pattern dimensional errors, and short circuits between adjacent conductors are reduced.
【図１】この発明の一実施例による半導体装置のセラミ
ック基板上に導体パターンを形成した領域を示す平面図
である。FIG. 1 is a plan view showing a region in which a conductor pattern is formed on a ceramic substrate of a semiconductor device according to an embodiment of the present invention.
【図２】図１におけるＩＩ−ＩＩ線における断面図であ
る。FIG. 2 is a sectional view taken along line II-II in FIG. 1.
【図３】従来の半導体装置のセラミック基板上に導体パ
ターンを形成した領域を示す平面図である。FIG. 3 is a plan view showing a region in which a conductor pattern is formed on a ceramic substrate of a conventional semiconductor device.
【図４】図３のＩＶ−ＩＶ線における断面図である。FIG. 4 is a sectional view taken along the line IV-IV in FIG. 3;
１ セラミック基板 １ａ 凸部パターン ２ 導体パターン ３ オーバーガラス ４ 抵抗体 ５ スルーホール １１ セラミック基板 １２ 導体パターン １３ オーバーガラス １４ 抵抗体 １５ スルーホール 1 Ceramic substrate 1a Convex pattern 2 Conductor pattern 3 Over glass 4 Resistor 5 Through hole 11 Ceramic substrate 12 Conductor pattern 13 Over glass 14 Resistor 15 Through hole
Claims (2)
面に形成された導体パターンとを備えた半導体装置にお
いて、上記セラミック基板表面の凸部パターン上に導体
パターンが形成されていることを特徴とする半導体装置
。1. A semiconductor device comprising a ceramic substrate and a conductor pattern formed on the surface of the ceramic substrate, characterized in that the conductor pattern is formed on a convex pattern on the surface of the ceramic substrate. .
凸部パターンを備えたセラミック基板を成形する工程と
、上記凸部パターンに対応したマスクパターンを形成し
、該マスクパターンをマスク材として上記凸部パターン
上に導体パターンを印刷する工程とを含むことを特徴と
する半導体装置の製造方法。2. A step of molding a ceramic substrate having a convex pattern on which a conductive pattern is formed on the surface of the substrate, forming a mask pattern corresponding to the convex pattern, and using the mask pattern as a mask material to form the convex pattern. 1. A method for manufacturing a semiconductor device, the method comprising: printing a conductor pattern on the top pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15590591A JPH04352379A (en) | 1991-05-29 | 1991-05-29 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15590591A JPH04352379A (en) | 1991-05-29 | 1991-05-29 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04352379A true JPH04352379A (en) | 1992-12-07 |
Family
ID=15616081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15590591A Pending JPH04352379A (en) | 1991-05-29 | 1991-05-29 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04352379A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010023465A (en) * | 2008-07-24 | 2010-02-04 | Dainippon Printing Co Ltd | Printing device and printing method |
| JP2013157533A (en) * | 2012-01-31 | 2013-08-15 | Kyocera Corp | Ceramic wiring board, semiconductor element mounting substrate, and semiconductor device |
-
1991
- 1991-05-29 JP JP15590591A patent/JPH04352379A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010023465A (en) * | 2008-07-24 | 2010-02-04 | Dainippon Printing Co Ltd | Printing device and printing method |
| JP2013157533A (en) * | 2012-01-31 | 2013-08-15 | Kyocera Corp | Ceramic wiring board, semiconductor element mounting substrate, and semiconductor device |
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