JPH04344406A - Scanning type tunnel microscope - Google Patents
Scanning type tunnel microscopeInfo
- Publication number
- JPH04344406A JPH04344406A JP3116288A JP11628891A JPH04344406A JP H04344406 A JPH04344406 A JP H04344406A JP 3116288 A JP3116288 A JP 3116288A JP 11628891 A JP11628891 A JP 11628891A JP H04344406 A JPH04344406 A JP H04344406A
- Authority
- JP
- Japan
- Prior art keywords
- probe
- sample
- whisker
- tip
- atom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 claims abstract description 83
- 230000005641 tunneling Effects 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 239000013078 crystal Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、観察すべき試料の表面
とその表面に相対向する探針との間に流れるトンネル電
流を測定することにより、試料表面の状態を測定する走
査型トンネル顕微鏡に関するものである。[Industrial Application Field] The present invention is a scanning tunneling microscope that measures the state of a sample surface by measuring the tunneling current flowing between the surface of the sample to be observed and a probe facing the surface. It is related to.
【０００２】0002
【従来の技術】近年、試料表面の状態を観察する手段と
しては、実空間での状態をそのまま観察できる走査型ト
ンネル顕微鏡が注目されている。これは、ジー・ビニッ
ヒ（Ｇ．Ｂｉｎｎｉｇ）とエッチ・ローラ（Ｈ．Ｒｏｈ
ｒｅｒ）の考案になるもので、探針と試料の間に流れる
トンネル電流を用いて試料の表面形状の測定を行なうも
のである（フィジカル・レビュー・レター・第４９号・
５７頁・１９８２年＝Ｇ．Ｂｉｎｎｉｎｇ ｅｔ．ａ
ｌ．Ｐｈｙｓ．Ｒｅｖ．Ｌｅｔｔ．４９．Ｐ５７．１９
８２およびＵ．Ｓ．Ｐ４３４３９９３参照）。BACKGROUND OF THE INVENTION In recent years, scanning tunneling microscopes have been attracting attention as a means of observing the state of the surface of a sample, which allows the state to be observed in real space as it is. This is G. Binnig and H.Roh
(Physical Review Letter No. 49), which measures the surface shape of a sample using a tunnel current flowing between the probe and the sample.
57 pages, 1982 = G. Binning et. a
l. Phys. Rev. Lett. 49. P57.19
82 and U. S. (See P4343993).
【０００３】以下、従来の走査型トンネル顕微鏡につい
て図２を参照して説明する。図２において、１は基台で
あり、その上に架設台２が設けられている。架設台２の
上部水平部の先端部下側には、試料台３が設けられ、こ
の試料台３に試料４が取り付けられている。５は探針で
あり、探針台６の上部に垂直に保持されている。７，８
，９は探針台６の側部および下部に一端が互いに直角に
交差するように接合された微動機構を構成する圧電素子
である。Ｘ，Ｙ方向の圧電素子７，８の他端は、それぞ
れ基台１に垂直に立設された架設台１０，１１に接合さ
れ、Ｚ方向の圧電素子９の他端は、基台１に接合されて
いる。これらの部材は、真空容器１２内に収容され、図
示されない除振機構に支持されている。A conventional scanning tunneling microscope will be explained below with reference to FIG. In FIG. 2, 1 is a base, and a construction base 2 is provided on the base. A sample stand 3 is provided below the tip of the upper horizontal portion of the installation stand 2, and a sample 4 is attached to this sample stand 3. Reference numeral 5 denotes a probe, which is held vertically at the top of the probe stand 6. 7,8
, 9 are piezoelectric elements constituting a fine movement mechanism, which are joined to the side and lower portions of the probe base 6 so that their one ends cross each other at right angles. The other ends of the piezoelectric elements 7 and 8 in the X and Y directions are joined to the construction stands 10 and 11, respectively, which are vertically installed on the base 1, and the other end of the piezoelectric element 9 in the Z direction is connected to the base 1. It is joined. These members are housed in the vacuum container 12 and supported by a vibration isolating mechanism (not shown).
【０００４】次に、以上のように構成された走査型トン
ネル型顕微鏡の動作について説明する。まず、図示され
ない粗動機構により試料４と探針５との間の距離を近づ
ける。次に、駆動回路１３でＸ，Ｙ方向の圧電素子７，
８を駆動することにより、探針５で試料４の表面を試料
４に平行なＸ，Ｙ方向に走査させる。この時、検出手段
１５により検出される探針５と試料４の間に流れるトン
ネル電流が一定の値になるように、制御回路１４が駆動
回路１３を介してＺ方向の圧電素子９の駆動を制御する
。このトンネル電流の値は、探針５と試料４の間の距離
の変化に対して敏感に変化するため、試料４の表面の微
細な凹凸の変化を電流の大きな変化として観測すること
ができ、これをコンピュータにより画像化処理して、試
料４の表面構造を得る。Next, the operation of the scanning tunneling microscope constructed as above will be explained. First, the distance between the sample 4 and the probe 5 is brought closer using a coarse movement mechanism (not shown). Next, the drive circuit 13 drives the piezoelectric elements 7 and 7 in the X and Y directions.
8 causes the probe 5 to scan the surface of the sample 4 in the X and Y directions parallel to the sample 4. At this time, the control circuit 14 drives the piezoelectric element 9 in the Z direction via the drive circuit 13 so that the tunnel current flowing between the probe 5 and the sample 4 detected by the detection means 15 becomes a constant value. Control. Since the value of this tunneling current changes sensitively to changes in the distance between the probe 5 and the sample 4, changes in minute irregularities on the surface of the sample 4 can be observed as large changes in the current. This is imaged by a computer to obtain the surface structure of the sample 4.
【０００５】[0005]
【発明が解決しようとする課題】このような走査型トン
ネル顕微鏡において、従来は、探針の材料として顕微鏡
による観察の操作に耐えうるように、強度が高く、仕事
関数（金属や半導体の結晶表面から１個の電子を表面の
すぐ外側に取り出すのに必要な最小のエネルギー）の大
きな物質、例えばタングステンや白金等を選択していた
ため、どうしても試料の原子よりも原子半径が大きくな
ってしまい、顕微鏡の解像度を余り高くすることができ
ないという問題があった。[Problems to be Solved by the Invention] Conventionally, in such a scanning tunneling microscope, the material for the probe has been to have high strength and work function (metal or semiconductor crystal surface Since we selected materials with a large amount of energy (the minimum energy required to extract one electron from the surface to just outside the surface), such as tungsten and platinum, the atomic radius was inevitably larger than the sample atom, making it impossible to use a microscope. There was a problem that the resolution could not be made very high.
【０００６】本発明は、このような従来の問題を解決す
るものであり、探針の材料を改良することにより高い分
解能で観察が可能な走査型トンネル顕微鏡を提供するこ
とを目的とする。The present invention is intended to solve these conventional problems, and an object of the present invention is to provide a scanning tunneling microscope that allows observation with high resolution by improving the material of the probe.
【０００７】[0007]
【課題を解決するための手段】本発明は、上記目的を達
成するために、探針の材料としてウイスカーを用いたこ
とを特徴とする。[Means for Solving the Problems] In order to achieve the above object, the present invention is characterized in that a whisker is used as the material of the probe.
【０００８】[0008]
【作用】本発明は、探針の材料としてウイスカーを用い
ることによって、細くて強度が高く仕事関数の大きな探
針を得ることができ、従来よりも解像度の高い走査型ト
ンネル顕微鏡を実現することができる。[Operation] By using whiskers as the material of the probe, the present invention can obtain a thin, strong, and large work function probe, and can realize a scanning tunneling microscope with higher resolution than conventional ones. can.
【０００９】[0009]
【実施例】以下、本発明の一実施例について図面を参照
しながら説明する。図１は本発明の一実施例における探
針先端部と試料の拡大図である。本実施例では、試料と
してシリコンを用い、探針の材料としてシリコンのウイ
スカーの先端を鋭利に研磨したものを用いている。図１
において、１０１はシリコンウイスカーの探針であり、
１０２は探針先端のシリコン原子、１０３はシリコンの
試料であり、１０４は試料表面のシリコン原子、１０５
は試料台、１０６，１０７，１０８は試料１０３の表面
に対し探針１０１をＸ，Ｙ，Ｚ方向に微動させるための
圧電素子である。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is an enlarged view of a probe tip and a sample in one embodiment of the present invention. In this example, silicon is used as the sample, and a silicon whisker with a sharply polished tip is used as the material of the probe. Figure 1
, 101 is a silicon whisker probe,
102 is a silicon atom at the tip of the probe, 103 is a silicon sample, 104 is a silicon atom on the sample surface, 105
1 is a sample stage, and 106, 107, and 108 are piezoelectric elements for slightly moving the probe 101 in the X, Y, and Z directions with respect to the surface of the sample 103.
【００１０】以上のように構成された走査型トンネル顕
微鏡について、以下その動作について説明する。まず圧
電素子１０６，１０７を駆動することにより、探針１０
１で試料１０３の表面を試料１０３に平行な方向に走査
させる。この時、圧電素子１０８の駆動を制御すること
により、探針１０１の先端原子１０２と試料１０３との
間に流れるトンネル電流が一定の値になるように保つ。
このトンネル電流の値は、探針１０１の先端原子１０２
と試料１０３の表面の原子との間の距離の変化に対して
敏感に変化するため、試料１０３表面の構造の原子レベ
ルの微細な凹凸の変化を、電流の大きな変化として観測
することが可能になる。したがって、この電流値が一定
に保たれるように圧電素子１０８を駆動することにより
、探針１０１の先端原子１０２は試料１０３の表面付近
を、その表面の凹凸に沿って移動することになり、結果
的に試料１０３の表面に関するデータが得られることに
なる。The operation of the scanning tunneling microscope constructed as described above will be explained below. First, by driving the piezoelectric elements 106 and 107, the probe 10
1, the surface of the sample 103 is scanned in a direction parallel to the sample 103. At this time, by controlling the drive of the piezoelectric element 108, the tunnel current flowing between the tip atom 102 of the probe 101 and the sample 103 is maintained at a constant value. The value of this tunnel current is determined by the tip atom 102 of the probe 101.
Because it changes sensitively to changes in the distance between the current and the atoms on the surface of sample 103, it is possible to observe minute changes in the atomic level unevenness of the structure of the surface of sample 103 as large changes in the current. Become. Therefore, by driving the piezoelectric element 108 so that this current value is kept constant, the tip atom 102 of the probe 101 moves near the surface of the sample 103 along the unevenness of the surface. As a result, data regarding the surface of the sample 103 is obtained.
【００１１】ウイスカーは、繊維状または針状に成長し
た単結晶をいい、ひげ結晶とも呼ばれている。太さは０
．１μｍ程度から１０μｍ程度までであり、長さは１０
ｍｍ以上に達することもある。１μｍよりも細いウイス
カーは、一般に結晶としての完全性が極めて良好で、そ
の機械的強度も極めて高い。[0011] A whisker is a single crystal grown in the form of a fiber or needle, and is also called a whisker crystal. Thickness is 0
．． The length is from about 1 μm to about 10 μm, and the length is 10 μm.
It may reach more than mm. Whiskers that are thinner than 1 μm generally have very good crystalline integrity and have very high mechanical strength.
【００１２】ウイスカーは、水銀、黒鉛、塩化ナトリウ
ム、塩化カリウム、銅、鉄、酸化アルミニウム、シリコ
ン等、非常にさまざまな物質から作ることができる。こ
のうち、シリコンのウイスカーについては、「固体物理
」第１８巻・１２号・１９８３年・２５〜３４ページの
論文「結晶の成長機構と形（その１）」の中に記載され
ている。Whiskers can be made from a wide variety of materials, including mercury, graphite, sodium chloride, potassium chloride, copper, iron, aluminum oxide, silicon, and others. Of these, silicon whiskers are described in the paper ``Crystal Growth Mechanism and Form (Part 1)'' in ``Solid State Physics'' Volume 18, No. 12, 1983, pages 25-34.
【００１３】このように、上記実施例によれば、試料１
０３の原子と同一の物質であるシリコンのウイスカーか
ら形成した探針１０１を用いることにより、探針１０１
の先端の原子１０２の原子半径を試料１０３表面の原子
１０４の原子半径と同等以下にすることができるので、
試料１０３表面の原子レベルの凹凸に対する探針１０１
の先端原子１０２の追随性を高めることができ、従来に
較べて解像度の高い顕微鏡像を得ることが出来る。As described above, according to the above embodiment, sample 1
By using the probe 101 formed from a silicon whisker, which is the same substance as the atom of 03, the probe 101
Since the atomic radius of the atom 102 at the tip of can be made equal to or smaller than the atomic radius of the atom 104 on the surface of the sample 103,
Probe 101 for atomic level unevenness on the surface of sample 103
It is possible to improve the tracking ability of the tip atom 102, and it is possible to obtain a microscopic image with higher resolution than in the past.
【００１４】[0014]
【発明の効果】以上のように、本発明によれば、探針の
材料としてウイスカーを用いることにより、細くて強度
が高く、仕事関数の大きな探針を得ることができ、従来
に較べて解像度の高い優れた走査型トンネル顕微鏡を実
現することができるという効果を有する。As described above, according to the present invention, by using whiskers as the material of the probe, it is possible to obtain a thin, strong probe with a large work function, and the resolution is higher than that of the conventional one. This has the effect of making it possible to realize an excellent scanning tunneling microscope with high performance.
【図１】本発明の一実施例における探針先端部と試料の
拡大概略斜視図FIG. 1: An enlarged schematic perspective view of a probe tip and a sample in an embodiment of the present invention.
【図２】従来の走査型トンネル顕微鏡の概略構成図[Figure 2] Schematic diagram of a conventional scanning tunneling microscope
１０１ シリコンウイスカーの探針 １０２ 探針先端のシリコン原子 １０３ シリコンの試料 １０４ 試料表面のシリコン原子 １０５ 試料台 １０６ 圧電素子 １０７ 圧電素子 １０８ 圧電素子 101 Silicon whisker probe 102 Silicon atoms at the tip of the probe 103 Silicon sample 104 Silicon atoms on the sample surface 105 Sample stage 106 Piezoelectric element 107 Piezoelectric element 108 Piezoelectric element
Claims (1)
流を計測する走査型トンネル顕微鏡の探針としてウイス
カーを用いた走査型トンネル顕微鏡。1. A scanning tunneling microscope that uses a whisker as a probe for measuring a tunneling current flowing between the probe and a sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3116288A JPH04344406A (en) | 1991-05-21 | 1991-05-21 | Scanning type tunnel microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3116288A JPH04344406A (en) | 1991-05-21 | 1991-05-21 | Scanning type tunnel microscope |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04344406A true JPH04344406A (en) | 1992-12-01 |
Family
ID=14683343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3116288A Pending JPH04344406A (en) | 1991-05-21 | 1991-05-21 | Scanning type tunnel microscope |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04344406A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06305898A (en) * | 1993-03-10 | 1994-11-01 | Internatl Business Mach Corp <Ibm> | Single crystal tip structure and its formation |
| CN106383250A (en) * | 2016-10-11 | 2017-02-08 | 中山大学 | Scanning tunneling microscope probe with use of two-dimensional atomic crystal material |
-
1991
- 1991-05-21 JP JP3116288A patent/JPH04344406A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06305898A (en) * | 1993-03-10 | 1994-11-01 | Internatl Business Mach Corp <Ibm> | Single crystal tip structure and its formation |
| CN106383250A (en) * | 2016-10-11 | 2017-02-08 | 中山大学 | Scanning tunneling microscope probe with use of two-dimensional atomic crystal material |
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