JPH04342494A - Plasma vapor phase growth device - Google Patents
Plasma vapor phase growth deviceInfo
- Publication number
- JPH04342494A JPH04342494A JP14554891A JP14554891A JPH04342494A JP H04342494 A JPH04342494 A JP H04342494A JP 14554891 A JP14554891 A JP 14554891A JP 14554891 A JP14554891 A JP 14554891A JP H04342494 A JPH04342494 A JP H04342494A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- parallel
- film
- vapor phase
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001947 vapour-phase growth Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 230000005389 magnetism Effects 0.000 claims description 4
- 238000010849 ion bombardment Methods 0.000 description 12
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明はプラズマ気相成長装置（
以下プラズマＣＶＤ装置と称する）に関し、特に磁界を
用いたプラズマＣＶＤ装置に関する。[Industrial Application Field] The present invention relates to a plasma vapor phase growth apparatus (
The present invention relates to a plasma CVD apparatus (hereinafter referred to as a plasma CVD apparatus), and particularly relates to a plasma CVD apparatus using a magnetic field.
【０００２】0002
【従来の技術】従来より、プラズマＣＶＤ装置は低温で
膜成長を行うことができるため、半導体製造工程におい
ては、配線層間膜，パッシベーション膜等の絶縁膜形成
に用いられている。2. Description of the Related Art Conventionally, plasma CVD apparatuses have been used to form insulating films such as wiring interlayer films and passivation films in semiconductor manufacturing processes because they can grow films at low temperatures.
【０００３】図９に従来の平行平板型プラズマＣＶＤ装
置を示す。例えば、図９に示すように、基板台７上の半
導体基板８に窒化シリコン膜を形成する場合、加熱源６
により３５０℃前後に加熱された半導体基板上に、原料
ガスであるシラン（ＳｉＨ４），アンモニア（ＮＨ３）
，キャリアガスとして窒素（Ｎ２）をガス供給口１より
反応室２に導入し、真空ポンプ９にて排気口３より反応
室２内を所定の圧力状態下に保持しながら、電極板４に
高周波電源５で高周波パワーを与えることにより膜形成
を行う。窒化シリコン膜は、二酸化シリコン膜に比べて
耐湿性に優れているため、主にパッシベーション膜に用
いられている。FIG. 9 shows a conventional parallel plate type plasma CVD apparatus. For example, as shown in FIG. 9, when forming a silicon nitride film on the semiconductor substrate 8 on the substrate stand 7, the heat source 6
The raw material gases silane (SiH4) and ammonia (NH3) are placed on the semiconductor substrate heated to around 350°C.
, Nitrogen (N2) is introduced as a carrier gas into the reaction chamber 2 through the gas supply port 1, and a high frequency wave is applied to the electrode plate 4 while maintaining the inside of the reaction chamber 2 under a predetermined pressure state through the exhaust port 3 with the vacuum pump 9. Film formation is performed by applying high frequency power with a power source 5. A silicon nitride film has better moisture resistance than a silicon dioxide film, so it is mainly used as a passivation film.
【０００４】また、この種のプラズマＣＶＤ装置は、プ
ラズマ電位と基板電位の差から生じるイオン衝撃により
膜質のコントロールを行うが、このイオン衝撃は、成長
圧力や高周波パワー等により制御できる。例えば、パッ
シベーション用窒化シリコン膜においては、耐湿性が良
く、信頼性の高い膜を形成するために高周波パワーを変
えて、イオン衝撃の強さをコントロールすることにより
膜応力が小さく、より膜中の水素含有量を少なくしてい
る。Further, in this type of plasma CVD apparatus, film quality is controlled by ion bombardment generated from the difference between plasma potential and substrate potential, and this ion bombardment can be controlled by growth pressure, high frequency power, etc. For example, in silicon nitride films for passivation, in order to form a film with good moisture resistance and high reliability, the high frequency power is changed and the intensity of ion bombardment is controlled, thereby reducing film stress and increasing the concentration in the film. The hydrogen content is reduced.
【０００５】[0005]
【発明が解決しようとする課題】上述した従来のプラズ
マＣＶＤ装置では、半導体基板に対して垂直な方向成分
をもつイオン衝撃がほとんどであり、現在の微細でアス
ペクト比の大きいパターンでは、段差上部が受けるイオ
ン衝撃に対して段差側部が受けるイオン衝撃は非常に少
ないものとなる。[Problems to be Solved by the Invention] In the conventional plasma CVD apparatus described above, most of the ion bombardments have a component in a direction perpendicular to the semiconductor substrate. Compared to the ion bombardment received, the ion bombardment received by the step side portion is extremely small.
【０００６】したがって、平坦部と段差側壁部での膜質
が異なり、パッシベーション膜等においては、平坦部で
は耐湿性が良くても、側壁部では悪く、膜応力の差から
クラックが入る恐れもあり、信頼性上問題となる。[0006] Therefore, the film quality differs between the flat part and the stepped sidewall part, and in passivation films, etc., even if the moisture resistance is good in the flat part, it is poor in the sidewall part, and there is a risk of cracking due to the difference in film stress. This poses a reliability problem.
【０００７】本発明の目的は、前記課題を解決したプラ
ズマ気相成長装置を提供することにある。[0007] An object of the present invention is to provide a plasma vapor phase growth apparatus that solves the above problems.
【０００８】[0008]
【課題を解決するための手段】前記目的を達成するため
、本発明に係るプラズマ気相成長装置においては、磁気
発生部と、相対回転部とを有し、高周波放電による平行
平板型プラズマ気相成長装置であって、磁気発生部は、
平行平板間に位置し、半導体基板に対して平行な方向に
磁界を発生させるものであり、相対回転部は、半導体基
板と平行な平面内で基板と磁気発生部とを相対回転し、
磁界の基板に対する方向を変化させるものである。[Means for Solving the Problems] In order to achieve the above object, a plasma vapor phase growth apparatus according to the present invention includes a magnetic generation section and a relative rotation section, and a parallel plate plasma vapor phase growth apparatus using high frequency discharge. The growth apparatus includes a magnetism generating section,
The relative rotation section is located between parallel plates and generates a magnetic field in a direction parallel to the semiconductor substrate, and the relative rotation section relatively rotates the substrate and the magnetic generation section within a plane parallel to the semiconductor substrate.
This changes the direction of the magnetic field relative to the substrate.
【０００９】[0009]
【作用】本発明のプラズマＣＶＤ装置は、電極である平
行平板の間から半導体基板に対して平行な方向に磁界を
発生させることにより、膜成長中に基板がイオン衝撃を
垂直方向及び水平方向から受けるようにして膜質を均一
化したものである。[Operation] The plasma CVD apparatus of the present invention generates a magnetic field in a direction parallel to the semiconductor substrate between parallel flat plates that are electrodes, so that the substrate receives ion bombardment from vertical and horizontal directions during film growth. The quality of the film is made uniform in this way.
【００１０】0010
【実施例】以下、本発明の実施例を図面により説明する
。[Embodiments] Hereinafter, embodiments of the present invention will be explained with reference to the drawings.
【００１１】（実施例１）図１は、本発明の実施例１を
示す構成図、図２は同平面図である。(Embodiment 1) FIG. 1 is a configuration diagram showing Embodiment 1 of the present invention, and FIG. 2 is a plan view thereof.
【００１２】図において、反応室２内には、電極板４と
基板台７とが上下に配置して設置されており、電極板４
には、電極板４の下面開口より反応ガスを噴き出させる
ガス供給口１が取付けてある。また、電極板４と基板台
７との間に高周波電源５から高周波パワーが供給され、
基板台７上に半導体基板８が設置される。また、基板台
７には、半導体基板８を加熱する加熱源６が取付けてあ
り、反応室２の底部排気口３に真空排気用の真空ポンプ
９が取付けてある。In the figure, an electrode plate 4 and a substrate stand 7 are installed vertically in the reaction chamber 2.
A gas supply port 1 is attached to the electrode plate 4 for blowing out a reaction gas from an opening on the lower surface thereof. Further, high frequency power is supplied from a high frequency power source 5 between the electrode plate 4 and the substrate stand 7,
A semiconductor substrate 8 is placed on the substrate stand 7 . Further, a heat source 6 for heating a semiconductor substrate 8 is attached to the substrate table 7, and a vacuum pump 9 for evacuation is attached to the bottom exhaust port 3 of the reaction chamber 2.
【００１３】さらに、磁気発生部としての磁気コイル１
０，１０は基板台７上の半導体基板８の外周側に配置さ
れ、半導体基板８に対して平行な方向に磁界を発生させ
るものである。さらに、相互回転部１６は、半導体基板
８の中心を回転軸として、磁気コイル１０，１０を半導
体基板８と平行な平面内で基板８に対し相対回転させ、
磁気コイル１０による磁界の基板８に対する方向を変化
させるものである。Furthermore, a magnetic coil 1 as a magnetism generating section
0 and 10 are placed on the outer peripheral side of the semiconductor substrate 8 on the substrate table 7, and generate a magnetic field in a direction parallel to the semiconductor substrate 8. Further, the mutual rotation unit 16 rotates the magnetic coils 10, 10 relative to the substrate 8 in a plane parallel to the semiconductor substrate 8, with the center of the semiconductor substrate 8 as the rotation axis,
This is to change the direction of the magnetic field generated by the magnetic coil 10 with respect to the substrate 8.
【００１４】実施例において、膜形成を行う場合、加熱
源６により加熱された半導体基板８上に原料ガスをガス
供給口１より反応室２に導入し、真空ポンプ９により反
応室２内を所定の圧力状態下に保持して電極板４に高周
波パワーを与える。In the embodiment, when forming a film, raw material gas is introduced into the reaction chamber 2 from the gas supply port 1 onto the semiconductor substrate 8 heated by the heat source 6, and the inside of the reaction chamber 2 is heated to a predetermined level by the vacuum pump 9. High frequency power is applied to the electrode plate 4 while maintaining the electrode plate 4 under a pressure condition of .
【００１５】このとき、平行平板間に備えた磁気コイル
１０により磁界を半導体基板８と平行な方向に与え、磁
気コイル１０を基板８の中心が回転軸となるように回転
させる。この磁界Ｂとプラズマによる電界Ｅにより、プ
ラズマシース中のイオンはＥ×Ｂの方向に螺旋状に回転
しながら移動する。At this time, a magnetic field is applied in a direction parallel to the semiconductor substrate 8 by the magnetic coil 10 provided between the parallel plates, and the magnetic coil 10 is rotated so that the center of the substrate 8 becomes the rotation axis. Due to this magnetic field B and the electric field E caused by the plasma, the ions in the plasma sheath move while rotating in a spiral shape in the direction of ExB.
【００１６】このため、膜成長中に基板が受けるイオン
衝撃は、基板８に対する垂直方向成分だけでなく、水平
方向成分も多く存在するため、基板８上の微細なアスペ
クト比の大きいパターン上での側壁部にも、平坦部と同
程度のイオン衝撃が起こることから、基板８上のパター
ン平坦部と側壁部で膜質の変わらない膜が得られる。For this reason, the ion bombardment that the substrate receives during film growth has many horizontal components as well as vertical components to the substrate 8. Since the same degree of ion bombardment occurs on the side wall portions as on the flat portions, it is possible to obtain a film with the same film quality between the flat portions of the pattern on the substrate 8 and the side wall portions.
【００１７】ここで、基板８上のパターン平坦部と側壁
部の膜質の違いを調べるためにウェットエッチングを用
いた。まず、温度３５０℃，圧力１．８Ｔｏｒｒ，Ｓｉ
Ｈ４３００ｃｃ／ｍｉｎ，ＮＨ３ １７００ｃｃ／ｍ
ｉｎ，Ｎ２ １５００ｃｃ／ｍｉｎ，高周波パワー５
００Ｗ，磁気コイル１０の磁束密度１０００Ｇａｕｓｓ
に設定して、図３に示すようなシリコン酸化膜１４上の
アルミ配線１３の段差形状をもつ半導体基板１５に窒化
シリコン膜１７を堆積させた。その形状断面図を図４（
ａ）に示し、図４（ｂ）に従来法により磁界を与えず高
周波パワーのみ４００Ｗとして上述の条件により同様に
図３の形状をもつ半導体基板に窒化シリコン膜１７を堆
積させた形状断面図を示す。Here, wet etching was used to examine the difference in film quality between the flat pattern portion and the side wall portion of the substrate 8. First, the temperature is 350°C, the pressure is 1.8 Torr, and Si
H4300cc/min, NH3 1700cc/m
in, N2 1500cc/min, high frequency power 5
00W, magnetic flux density of magnetic coil 10 1000 Gauss
A silicon nitride film 17 was deposited on a semiconductor substrate 15 having a stepped shape of an aluminum wiring 13 on a silicon oxide film 14 as shown in FIG. A cross-sectional view of its shape is shown in Figure 4 (
Fig. 4(b) shows a cross-sectional view of a silicon nitride film 17 deposited on a semiconductor substrate having the shape of Fig. 3 under the above-mentioned conditions using the conventional method without applying a magnetic field and using only a high-frequency power of 400 W. show.
【００１８】次に２つの半導体基板を３０倍に希釈され
たバッファードフッ酸により５分間エッチングした後の
断面形状を図５に示す。図５（ａ）は本発明による形状
断面図であり、図５（ｂ）は従来法によるものである。
図４と図５によりウェットエッチングによるエッチング
レートを配線間隔別に測定した結果を図６に示す。
（ａ），（ｂ）共に平坦部のエッチングレートはほとん
ど変わらないものの、側壁部では従来法による（ｂ）の
エッチングレートは非常に速く、配線間隔が狭いほど速
くなる。それに対して本発明による（ａ）では、側壁部
のエッチングレートは平坦部のエッチングレートに近い
値であり、平坦部と側壁部の膜質に大きな差がないこと
を示している。Next, the cross-sectional shapes of the two semiconductor substrates after being etched for 5 minutes using buffered hydrofluoric acid diluted 30 times are shown in FIG. FIG. 5(a) is a cross-sectional view of the shape according to the present invention, and FIG. 5(b) is a diagram according to the conventional method. FIG. 6 shows the results of measuring the etching rate by wet etching for each wiring interval using FIGS. 4 and 5. Although the etching rate of the flat portion in both (a) and (b) is almost the same, the etching rate of (b) by the conventional method on the side wall portion is extremely fast, and becomes faster as the wiring spacing becomes narrower. In contrast, in (a) according to the present invention, the etching rate of the sidewall portion is close to the etching rate of the flat portion, indicating that there is no significant difference in film quality between the flat portion and the sidewall portion.
【００１９】また、図４に示した半導体基板により耐湿
性試験を行ったところ、従来法による（ｂ）では２００
ｈで故障したが、本発明による（ａ）は２０００ｈ以上
故障がなかった。In addition, when a moisture resistance test was conducted using the semiconductor substrate shown in FIG. 4, it was found that the conventional method (b)
However, in the case of (a) according to the present invention, there was no failure for more than 2000 hours.
【００２０】（実施例２）図７は、本発明の実施例２を
示す構成図である。(Embodiment 2) FIG. 7 is a block diagram showing Embodiment 2 of the present invention.
【００２１】本実施例では、相対回転部は、磁気コイル
による磁界に対して半導体基板を相互回転する機能を有
するものを用いた場合の例である。すなわち、図１で示
した基板台７に図７に示すような相対回転部としての回
転機構１２及び回転台１１を備え、膜形成中は磁気コイ
ル１０を回転させず、半導体基板８を回転させることに
より、基板８と平行な平面内で基板に対して磁界を回転
させる。これにより、水平方向成分のイオン衝撃が増す
と共に、基板が回転するため、側壁部へのイオン衝突の
回数も増すことから、より平坦部と側壁部で膜質の変わ
らない膜が得られる。実施例２において、例えば、成長
条件温度３５０℃，圧力１．８Ｔｏｒｒ，ＳｉＨ４
３００ｃｃ／ｍｉｎ，ＮＨ３ １７００ｃｃ／ｍｉｎ
，Ｎ２ １５００ｃｃ／ｍｉｎ，高周波パワー５００
Ｗ，磁気コイル１０による磁束密度１０００Ｇａｕｓｓ
により窒化シリコン膜を図３で示した半導体基板上に堆
積し、実施例１と同様に、１：３０のバッファードフッ
酸により５分間エッチングを行い、エッチングレートを
調べた結果、図８に示すように平坦部と側壁部とでほぼ
同じエッチングレートとなり、平坦部と側壁部で膜質の
変わらない膜を形成することができた。[0021] In this embodiment, the relative rotation part is an example in which a member having a function of mutually rotating the semiconductor substrate with respect to the magnetic field generated by the magnetic coil is used. That is, the substrate table 7 shown in FIG. 1 is provided with a rotation mechanism 12 and a rotating table 11 as a relative rotation unit as shown in FIG. 7, and the semiconductor substrate 8 is rotated without rotating the magnetic coil 10 during film formation. This rotates the magnetic field relative to the substrate in a plane parallel to the substrate 8. This increases the ion bombardment in the horizontal direction, and since the substrate rotates, the number of ion bombardments on the sidewalls also increases, making it possible to obtain a film with the same film quality between the flat portion and the sidewalls. In Example 2, for example, the growth conditions were: temperature 350°C, pressure 1.8 Torr, SiH4
300cc/min, NH3 1700cc/min
, N2 1500cc/min, high frequency power 500
W, magnetic flux density by magnetic coil 10 1000 Gauss
A silicon nitride film was deposited on the semiconductor substrate shown in FIG. 3, and as in Example 1, it was etched with 1:30 buffered hydrofluoric acid for 5 minutes, and the etching rate was examined, as shown in FIG. As shown, the etching rate was almost the same on the flat part and the side wall part, and it was possible to form a film with the same film quality on the flat part and the side wall part.
【００２２】[0022]
【発明の効果】以上説明したように本発明は、高周波放
電による平行平板型プラズマＣＶＤ装置において、平行
平板間に半導体基板に対して平行な方向に磁界を発生さ
せ、その磁界が基板と平行な平面内において基板に対し
て方向を変えることにより、半導体基板に対して水平方
向成分のイオン衝撃を多く発生させることができるため
、微細なパターンでの段差において平坦部と側壁部の膜
質が等しい膜が形成でき、信頼性が向上するという効果
を有する。As explained above, the present invention generates a magnetic field between parallel plates in a direction parallel to a semiconductor substrate in a parallel plate type plasma CVD apparatus using high frequency discharge, and the magnetic field is parallel to the substrate. By changing the direction with respect to the substrate within a plane, it is possible to generate a large amount of ion bombardment with a horizontal component on the semiconductor substrate. Therefore, it is possible to generate a film with the same film quality on the flat part and the side wall part at the step of a fine pattern. This has the effect of improving reliability.
【図１】本発明の実施例１を示す構成図である。FIG. 1 is a configuration diagram showing a first embodiment of the present invention.
【図２】図１の上面からの概略図である。FIG. 2 is a schematic view from above of FIG. 1;
【図３】半導体基板を示す断面図である。FIG. 3 is a cross-sectional view showing a semiconductor substrate.
【図４】本発明と従来例とにおける基板を示す断面図で
ある。FIG. 4 is a cross-sectional view showing a substrate in the present invention and a conventional example.
【図５】本発明と従来例とにおける基板を示す断面図で
ある。FIG. 5 is a cross-sectional view showing a substrate in the present invention and a conventional example.
【図６】本発明の実施例１の効果を調べた実験結果を示
した図である。FIG. 6 is a diagram showing the results of an experiment investigating the effects of Example 1 of the present invention.
【図７】本発明の実施例２を示す構成図である。FIG. 7 is a configuration diagram showing a second embodiment of the present invention.
【図８】本発明の実施例２の効果を調べた実験結果を示
した図である。FIG. 8 is a diagram showing the results of an experiment investigating the effects of Example 2 of the present invention.
【図９】従来例を示す構成図である。FIG. 9 is a configuration diagram showing a conventional example.
１ ガス供給口 ２ 反応室 ３ 排気口 ４ 電極板 ５ 高周波電源 ６ 加熱源 ７ 基板台 ８ 半導体基板 ９ 真空ポンプ １０ 磁気コイル １１ 回転台（相対回転部） １２ 回転機構（相対回転部） １３ アルミ配線 １４ シリコン酸化膜 １５ シリコン基板 １６ 相対回転部 1 Gas supply port 2 Reaction chamber 3 Exhaust port 4 Electrode plate 5 High frequency power supply 6 Heating source 7 Board stand 8 Semiconductor substrate 9 Vacuum pump 10 Magnetic coil 11 Rotating table (relative rotating part) 12 Rotation mechanism (relative rotation part) 13 Aluminum wiring 14 Silicon oxide film 15 Silicon substrate 16 Relative rotation part
Claims (1)
高周波放電による平行平板型プラズマ気相成長装置であ
って、磁気発生部は、平行平板間に位置し、半導体基板
に対して平行な方向に磁界を発生させるものであり、相
対回転部は、半導体基板と平行な平面内で基板と磁気発
生部とを相対回転し、磁界の基板に対する方向を変化さ
せるものであることを特徴とするプラズマ気相成長装置
。Claim 1: Comprising a magnetism generating section and a relative rotation section,
A parallel plate type plasma vapor phase growth apparatus using high frequency discharge, the magnetic generation section is located between the parallel plates and generates a magnetic field in a direction parallel to the semiconductor substrate, and the relative rotation section is located between the parallel plates. 1. A plasma vapor phase growth apparatus, characterized in that the substrate and a magnetism generating section are rotated relative to each other in a plane parallel to the substrate, thereby changing the direction of the magnetic field with respect to the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14554891A JP2924303B2 (en) | 1991-05-21 | 1991-05-21 | Plasma vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14554891A JP2924303B2 (en) | 1991-05-21 | 1991-05-21 | Plasma vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04342494A true JPH04342494A (en) | 1992-11-27 |
| JP2924303B2 JP2924303B2 (en) | 1999-07-26 |
Family
ID=15387729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14554891A Expired - Lifetime JP2924303B2 (en) | 1991-05-21 | 1991-05-21 | Plasma vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2924303B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102677019A (en) * | 2012-05-21 | 2012-09-19 | 中南大学 | Motion magnetic field auxiliary-reinforced chemical vapor deposition method and device |
| JP2014078685A (en) * | 2012-09-21 | 2014-05-01 | Tokyo Electron Ltd | Plasma treatment device and plasma treatment method |
-
1991
- 1991-05-21 JP JP14554891A patent/JP2924303B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102677019A (en) * | 2012-05-21 | 2012-09-19 | 中南大学 | Motion magnetic field auxiliary-reinforced chemical vapor deposition method and device |
| JP2014078685A (en) * | 2012-09-21 | 2014-05-01 | Tokyo Electron Ltd | Plasma treatment device and plasma treatment method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2924303B2 (en) | 1999-07-26 |
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