CN105070646B - A kind of preparation method of low stress nitride silicon thin film - Google Patents

A kind of preparation method of low stress nitride silicon thin film Download PDF

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Publication number
CN105070646B
CN105070646B CN201510445567.4A CN201510445567A CN105070646B CN 105070646 B CN105070646 B CN 105070646B CN 201510445567 A CN201510445567 A CN 201510445567A CN 105070646 B CN105070646 B CN 105070646B
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flow
reaction chamber
gas
preparation
low stress
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CN105070646A (en
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周华芳
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Chengdu Hiwafer Technology Co Ltd
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Chengdu Hiwafer Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Abstract

The present invention relates to technical field of semiconductor preparation, solve in the prior art that stress is larger in silicon nitride film is prepared, be unsuitable for the technical problem of the requirement of GaAs device, by providing a kind of preparation method of low stress nitride silicon thin film, comprise the following steps：The reaction chamber is vacuumized after wafer is loaded into reaction chamber, the vacuum of the reaction chamber is maintained at predetermined vacuum degree, and keep the first preset duration；The temperature value in the reaction chamber is controlled to preset temperature value, and keeps the second preset duration；The SiH of first flow is each led into the reaction chamber4The NH of gas, second flow3The N of gas, the 3rd flow2The He gases of gas and the 4th flow, and after each gas is passed through, keep the 3rd preset duration；Radio frequency igniting is carried out, each gas is formed plasmoid and reacts each other, generates silicon nitride film in the crystal column surface, and then realize the technique effect for the silicon nitride film that can prepare low stress.

Description

A kind of preparation method of low stress nitride silicon thin film
Technical field
The present invention relates to technical field of semiconductor preparation, more particularly to a kind of preparation method of low stress nitride silicon thin film.
Background technology
During the gaas compound semiconductor pHEMT manufacturings, silicon nitride film hardness is high and is the exhausted of high-k Edge medium, it is a kind of good moisture and Na+Barrier layer.Be generally used to as device surface passivation and prevent from polluting（Such as Dust, steam, acid gas etc.）, scratch and particle protection, metal level spacer medium, condenser dielectric etc..
PECVD（Plasma enhanced chemical vapor deposition method）The silicon nitride film of growth can effectively prevent steam and sodium Ion stains, and the silicon nitride film of additional extra-stress will pass through the formation in crack when having more preferable heat endurance, but depositing And stress is discharged, fissare film makes the surface of film thicker, and impurity can be also penetrated into wafer, will cause when serious short Road, and because GaAs is piezoelectric, the stress of silicon nitride can reduce the performance parameter of its electric crystal, such as saturation current Idss, hit Wear voltage BV, mutual conductance gm, blanking voltage VPWith microwave property etc..
Deielectric-coating stress intensity is relevant with thickness and medium species, and people select suitable thickness to make compression stress sometimes It is moderate with tensile stress, sometimes from the opposite two media of stress（Such as nitrogenize silicon/oxidative silicon duplicature）, obtain the flat of stress Weighing apparatus, avoids impacting the performance and reliability of device, but in commercial Application, processing procedure can be caused by preparing two media film Time and the increase of device cost, required cost are higher.
Traditional PECVD nitride depositions mode uses SiH4And NH3Or SiH4And N2Reaction generation silicon nitride film, closely Also to have experiment in SiH4And NH3On the basis of add N2, strengthen Si-N bonding forces using nitrogen plasma bombardment so as to improve Density of film, but for GaAs pHEMT devices, this method still suffers from weak point, and easily generation has tensile stress Silicon nitride film.
Therefore, stress is larger in silicon nitride film is prepared in the prior art, is unsuitable for the skill of the requirement of GaAs device Art problem.
The content of the invention
The present invention solves by providing a kind of preparation method of low stress nitride silicon thin film and is preparing nitrogen in the prior art Stress is larger in SiClx film, is unsuitable for the technical problem of the requirement of GaAs device, so realize can prepare it is low should The technique effect of the silicon nitride film of power.
The technical scheme of the embodiment of the present invention is specially：
A kind of preparation method of low stress nitride silicon thin film, comprises the following steps：
S10, the reaction chamber is vacuumized after wafer is loaded into reaction chamber, the vacuum of the reaction chamber is kept In predetermined vacuum degree, and keep the first preset duration；
S20, the temperature value in the reaction chamber is controlled to preset temperature value, and keep the second preset duration；
S30, the SiH of first flow is each led into the reaction chamber4The NH of gas, second flow3Gas, the 3rd stream The N of amount2The He gases of gas and the 4th flow, and after each gas is passed through, keep the 3rd preset duration；
S40, radio frequency igniting is carried out, each gas is formed plasmoid and react each other, in the wafer Surface Creation silicon nitride film.
Further, after S40, in addition to：
N is carried out into the reaction chamber2After purging and vacuum breaker, wafer is set out.
Further, the scope of the predetermined vacuum degree is 500-2000 millitorrs.
Further, the scope of the preset temperature value is 230 DEG C -350 DEG C.
Further, the first flow is 640sccm, and second flow 20sccm, the 3rd flow is 1000sccm, the Four flows are 3500sccm.
Further, in S40, the scope for carrying out the radio-frequency power of radio frequency igniting is 120W-190W, and radio-frequency power Fluctuating range is in the range of ± the 10% of predetermined power value.
Further, first preset duration, the second preset duration and the 3rd preset duration are 10 seconds.
The one or more technical schemes provided in the embodiment of the present invention, have at least the following technical effects or advantages：
Due to using will wafer be loaded into reaction chamber after gas in reaction chamber cavity will be vacuumized, and by the pressure in the cavity Control controls the temperature value in reaction chamber to be kept to preset temperature value to predetermined vacuum degree, and after the first preset duration of holding After second preset duration, the SiH of first flow is each led into reaction chamber4Gas, NH3Gas, N2Gas, He gases, After being passed through each gas, after keeping the 3rd preset duration, radio frequency igniting is carried out, each gas is formed plasmoid and mutual Between react, crystal column surface generate silicon nitride film, solve in the prior art in silicon nitride film is prepared stress compared with Greatly, it is unsuitable for the technical problem of the requirement of GaAs device, realizes the technology for the silicon nitride film that can prepare low stress Effect.
Brief description of the drawings
Fig. 1 is the step flow chart of the preparation method of low stress nitride silicon thin film in the embodiment of the present invention.
Embodiment
The present invention solves by providing a kind of preparation method of low stress nitride silicon thin film and is preparing nitrogen in the prior art Stress is larger in SiClx film, is unsuitable for the technical problem of the requirement of GaAs device, so realize can prepare it is low should The technique effect of the silicon nitride film of power.
In order to solve it is above-mentioned stress is larger in silicon nitride film is prepared in the prior art, be unsuitable for GaAs device will The technical problem asked, above-mentioned technical proposal is carried out specifically below in conjunction with Figure of description and specific embodiment It is bright.
The embodiment of the present invention provides a kind of preparation method of low stress nitride silicon thin film, as shown in figure 1, including following interior Hold：S10, reaction chamber is vacuumized after wafer is loaded into reaction chamber, the vacuum of reaction chamber is maintained at predetermined vacuum degree, And the first preset duration is kept, and first, wafer is loaded into the reaction chamber cavity, specifically when preparing the silicon nitride film, The silicon nitride film is formed on the wafer.Specifically, in S10, the predetermined vacuum degree is specially 500-2000 millitorrs （mTorr）, certainly, as the case may be, can also be set under other vacuums, not limit specifically in embodiments of the present invention It is fixed, gas is being extracted by vavuum pump, control the vacuum to be maintained at after predetermined vacuum degree, it is necessary to keep first it is default when It is long, it is that this period can be specifically 10s in order to which the vacuum ensured in the reaction chamber can be stablized a period of time.Then, hold Row S20, the temperature value in reaction chamber is controlled to preset temperature value, and keep the second preset duration, in a particular embodiment, The set temperature value is specially the value between 230 DEG C -350 DEG C, certainly, the preset temperature value is also not limited to, according to specific Situation is set, and after temperature reaches the preset temperature value, the second preset time, such as 10s is kept, to ensure the reaction The uniformity of chamber cavity technological temperature.
S10 and S20 is to build appropriate reaction condition to prepare the silicon nitride film of the low stress in above-mentioned steps, is connect , perform S30, the SiH of first flow is each led into the reaction chamber4The NH of gas, second flow3Gas, the 3rd flow N2The He gases of gas, the 4th flow.Specific SiH4The first flow of gas is 640sccm, NH3Second flow be 20sccm, N2The 3rd flow be 1000sccm, He the 4th flow is 3500sccm, the gas of above-mentioned each flow is passed through, in the mistake being passed through Cheng Zhong, flow can be adjusted with the usage time of equipment, default fluctuation of the flow specifically adjusted in the preset flow Change in value, general fluctuating range is no more than ± 10%, after each gas is passed through, keeps the 3rd preset duration, can be specifically 10s, to ensure each gas phase counterdiffusion, reactive material can be uniformly distributed, and be advantageous to fully react.
Then, S40 is performed, carries out radio frequency igniting, each gas is formed plasmoid and reacts each other, Crystal column surface generates silicon nitride film, and the sedimentation rate of the silicon nitride so generated is 20-25nm/min, and deposition thickness can basis Purposes in device and change, for example, during as dielectric deposition, thickness 150nm；When being deposited as protective layer, thickness is 80nm.Specific deposition of thick angle value changes according to practical devices design requirement, and general amplitude of variation is ± 10% in technical process.By In the reacting gas SiH in the reaction chamber4Gas, NH3Gas, N2He gases are added in gas, are had using the He plasmas There are higher thermal conductivity and Geng Gao Peng Ning reaction coefficients, improve reactant and product heat point in reaction chamber diameter range The uniformity of cloth, the uniformity and consistency requirements of silicon nitride film are not only met well, and prepare and be applied to arsenic The low stress nitride silicon thin film of gallium pHEMT devices.
During the silicon nitride film for preparing the low stress above-mentioned, using the plate grade of single-frequency 13.56MHz or 2.45GHz from Daughter PECVD device, radio-frequency power are set as between 120W-190W, and the fluctuating range of the radio-frequency power is in predetermined power In the range of ± the 10% of value.
In the embodiment of the present application be used for GaAs device on silicon nitride film done on uniformity, sedimentation rate and The test of stress, multiple test result such as following table：
As can be seen here, thickness evenness≤2.0% of each test bay, has good uniformity, and is using UNAXIS stress tests Equipment tests the stress of silicon nitride film, and test result is 0 ± 80MPa（0 ± 100MPa is generally viewed as unstressed）, it is thus obtained Silicon nitride film stress is relatively low, meets the requirement of GaAs pHEMT devices.And silicon nitride film sedimentation rate is higher（22.5nm/ min）, the needs of large-scale industrial production can be met, separately 7:Being etched to silicon nitride film in 1 BOE etching grooves, etching As a result it is 19-21nm/min, it is seen that deposited silicon nitride membrane structure is fine and close, pinhole rate is small, meets GaAs device low stress height The requirement of quality silicon nitride.Low stress nitride silicon thin film prepared by technique according to the invention scheme, utilizes helium（He）Well Heat transfer, so as to reach the purpose for preparing low stress compact silicon nitride film, it is applied to GaAs pHEMT devices, Improve the Performance And Reliability of device.
Although preferred embodiments of the present invention have been described, but those skilled in the art once know basic creation Property concept, then can make other change and modification to these embodiments.So appended claims be intended to be construed to include it is excellent Select embodiment and fall into having altered and changing for the scope of the invention.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies Within, then the present invention is also intended to comprising including these changes and modification.

Claims (6)

1. a kind of preparation method of low stress nitride silicon thin film, it is characterised in that comprise the following steps：
S10, the reaction chamber is vacuumized after wafer is loaded into reaction chamber, the vacuum of the reaction chamber is maintained at pre- If vacuum, and keep the first preset duration；
S20, the temperature value in the reaction chamber is controlled to preset temperature value, and keep the second preset duration；
S30, the SiH of first flow is each led into the reaction chamber4The NH of gas, second flow3Gas, the 3rd flow N2The He gases of gas and the 4th flow, and after each gas is passed through, the 3rd preset duration is kept, the first flow is 640sccm, second flow 20sccm, the 3rd flow are 1000sccm, and the 4th flow is 3500sccm；
S40, radio frequency igniting is carried out, each gas is formed plasmoid and react each other, in the crystal column surface Generate silicon nitride film.
2. the preparation method of low stress nitride silicon thin film according to claim 1, it is characterised in that after S40, also wrap Include：
N is carried out into the reaction chamber2After purging and vacuum breaker, wafer is set out.
3. the preparation method of low stress nitride silicon thin film according to claim 1, it is characterised in that the predetermined vacuum degree Scope be 500-2000 millitorrs.
4. the preparation method of low stress nitride silicon thin film according to claim 1, it is characterised in that the preset temperature value Scope be 230 DEG C -350 DEG C.
5. the preparation method of low stress nitride silicon thin film according to claim 1, it is characterised in that in S40, penetrated The scope of the radio-frequency power of frequency fire is 120W-190W, and the fluctuating range of radio-frequency power is in ± 10% scope of predetermined power value It is interior.
6. the preparation method of low stress nitride silicon thin film according to claim 1, it is characterised in that described first it is default when Long, the second preset duration and the 3rd preset duration are 10 seconds.
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CN105448668B (en) * 2015-12-30 2018-09-14 西安立芯光电科技有限公司 A method of improving SiNx adhesivenesses on GaAs wafers
WO2019067177A1 (en) * 2017-09-27 2019-04-04 Alta Devices, Inc. High growth rate deposition for group iii/v materials
CN108493760A (en) * 2018-04-10 2018-09-04 青岛海信宽带多媒体技术有限公司 A kind of Si3N4/ SiON composite membranes, chip of laser and preparation method
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