JPH04342470A - Low heat-conductive ceramic and its production - Google Patents
Low heat-conductive ceramic and its productionInfo
- Publication number
- JPH04342470A JPH04342470A JP3145677A JP14567791A JPH04342470A JP H04342470 A JPH04342470 A JP H04342470A JP 3145677 A JP3145677 A JP 3145677A JP 14567791 A JP14567791 A JP 14567791A JP H04342470 A JPH04342470 A JP H04342470A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- forming
- nitride
- thermal conductivity
- low thermal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 15
- 150000004767 nitrides Chemical class 0.000 claims abstract description 14
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 12
- 239000011148 porous material Substances 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000000843 powder Substances 0.000 claims abstract description 11
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 10
- 239000012298 atmosphere Substances 0.000 claims abstract description 9
- 229910052796 boron Inorganic materials 0.000 claims abstract description 9
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 4
- 150000004703 alkoxides Chemical class 0.000 claims abstract 3
- 229920000620 organic polymer Polymers 0.000 claims abstract 3
- 239000010936 titanium Substances 0.000 claims description 25
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- 239000011812 mixed powder Substances 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 8
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 229910000505 Al2TiO5 Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- AABBHSMFGKYLKE-SNAWJCMRSA-N propan-2-yl (e)-but-2-enoate Chemical compound C\C=C\C(=O)OC(C)C AABBHSMFGKYLKE-SNAWJCMRSA-N 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 229920003257 polycarbosilane Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- -1 Furthermore Substances 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
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- Ceramic Products (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は反応焼結系セラミックス
およびその製造方法に関し、特に低熱伝導特性を有し強
度も大きい反応焼結系セラミックスおよびその製造方法
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reaction sintered ceramic and a method for producing the same, and more particularly to a reaction sintered ceramic having low thermal conductivity and high strength, and a method for producing the same.
【０００２】0002
【従来の技術】最近ファインセラミックス技術が注目さ
れ、該技術によって生成されるセラミックスを既存構造
の金属と置換する試みが多くなされている。たとえば、
自動車用の内燃機関のピストンヘッド、シリンダライナ
、コンロッドなど、高熱高圧に曝される部分や大きな歪
力を受ける部分の部品として使用する試みがなされ、す
でに実用に供されているものも多数ある。2. Description of the Related Art Recently, fine ceramics technology has attracted attention, and many attempts have been made to replace metals in existing structures with ceramics produced by this technology. for example,
Attempts have been made to use them as parts of parts that are exposed to high heat and pressure, such as piston heads, cylinder liners, and connecting rods for automobile internal combustion engines, and parts that are subject to large strain forces, and many products are already in practical use.
【０００３】セラミックスの種類は極めて多く、それぞ
れ物性としてのそれら独特の特徴点を持っている。反応
焼結系セラミッスを製造する場合、窒化の促進のため、
主原料である珪素（Ｓｉ）粉末に、鉄（Ｆｅ）、コバル
ト（Ｃｏ）、チタン（Ｔｉ）、ジルコニウム（Ｚｒ）な
どの元素を、０．０５％〜２ｗｔ％添加することが知ら
れており、たとえば特開昭５９ー１５２２７１号公報、
特開昭５９ー２０７８７５号公報、特開昭５９ー２０７
８７６号公報、特開昭５９ー２０７８７７号公報などに
記載されている。[0003] There are many types of ceramics, each of which has its own unique physical properties. When manufacturing reactive sintered ceramics, to promote nitriding,
It is known that 0.05% to 2wt% of elements such as iron (Fe), cobalt (Co), titanium (Ti), and zirconium (Zr) are added to silicon (Si) powder, which is the main raw material. , for example, JP-A-59-152271,
JP-A-59-207875, JP-A-59-207
It is described in Japanese Patent Application Laid-Open No. 876, Japanese Patent Application Laid-Open No. 59-207877, etc.
【０００４】0004
【発明が解決しようとする課題】上記の如き従来の反応
焼結系セラミックスは、触媒として添加する元素の量が
微量すぎるために、不純物によるフォノンの熱輸送が規
制されにくく、このため反応焼結系セラミックスは低熱
伝導材とはならない。また、これら反応焼結系セラミッ
クスの強度は、通常の焼結により得られるセラミックス
よりも強度は小さい。[Problems to be Solved by the Invention] In the conventional reaction sintered ceramics as described above, since the amount of elements added as catalysts is too small, it is difficult to control the heat transport of phonons by impurities. ceramics are not low thermal conductive materials. Further, the strength of these reaction sintered ceramics is lower than that of ceramics obtained by normal sintering.
【０００５】本発明は上記の如き従来の欠点を改良する
発明であり、その目的は反応焼結系セラミックスにおい
て、低熱伝導率特性を有し、かつ強度も従来の反応焼結
系セラミックスよりも大きな新しい反応焼結系セラミッ
クスとその製造方法を得ることにある。[0005] The present invention is an invention to improve the above-mentioned conventional drawbacks, and its purpose is to create a reaction sintered ceramic that has low thermal conductivity and strength that is greater than that of the conventional reaction sintered ceramic. The objective is to obtain a new reaction sintered ceramic and its manufacturing method.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するため
に、本発明では、珪素（Ｓｉ）、窒素（Ｎ）、酸素（Ｏ
）、の全ての元素及びチタン（Ｔｉ），ジルコニウム（
Ｚｒ），ハフニウム（Ｈｆ），イットリウム（Ｙ），ホ
ウ素（Ｂ），アルミニウム（Ａｌ）の元素群の中の少な
くとも１種類以上で構成されかつ気孔を１２％以上含む
低熱伝導セラミックスを提供するとともに、さらに珪素
（Ｓｉ）を主成分とする粉末にチタン（Ｔｉ），ジルコ
ニウム（Ｚｒ），ハフニウム（Ｈｆ），イットリウム（
Ｙ），ホウ素（Ｂ），アルミニウム（Ａｌ）の元素群の
中の少なくとも１種類以上を５ｗｔ％以上含む混合粉末
を形成する工程と、該混合粉末を用いて成型体を形成す
る工程と、該成型体を窒素雰囲気中で焼結多孔質の窒化
物を形成する工程と、該窒素雰囲気での焼結工程を経た
後酸素を含んだ雰囲気中で加熱して前記窒化物の一部を
酸化物に変化させる工程を有することを特徴とする低熱
伝導セラミックスの製造方法を提供し、加えて、形成さ
れた焼結体の気孔表面に非晶質セラミック薄膜を形成し
、あるいは該焼結体の所望の表面に非晶質セラミック薄
膜を形成する低熱伝導セラミックスの製造方法を提供す
るものである。[Means for Solving the Problems] In order to solve the above problems, in the present invention, silicon (Si), nitrogen (N), oxygen (O
), all elements of titanium (Ti), zirconium (
Provided is a low thermal conductivity ceramic that is composed of at least one element selected from the group of elements Zr), hafnium (Hf), yttrium (Y), boron (B), and aluminum (Al) and contains 12% or more of pores, Furthermore, titanium (Ti), zirconium (Zr), hafnium (Hf), and yttrium (
a step of forming a mixed powder containing 5 wt% or more of at least one of the element groups Y), boron (B), and aluminum (Al); a step of forming a molded body using the mixed powder; The molded body is sintered in a nitrogen atmosphere to form a porous nitride, and after the sintering process in the nitrogen atmosphere, a part of the nitride is converted into an oxide by heating in an oxygen-containing atmosphere. The present invention provides a method for producing low thermal conductivity ceramics, which is characterized by comprising a step of changing the ceramic material to a low thermal conductivity, and further forming an amorphous ceramic thin film on the pore surface of the formed sintered body, or changing the sintered body to a desired value. The present invention provides a method for manufacturing low thermal conductivity ceramics in which an amorphous ceramic thin film is formed on the surface of the ceramic.
【０００７】[0007]
【実施例】以下、本発明の実施例を詳細に説明する。珪
素（Ｓｉ）の粉末１００重量部に他種粉末としてチタン
（Ｔｉ）粉末５重量部を添加し、さらに有機バインダを
所定量添加してボ−ルミルにて約１２時間混練の後、取
り出して造粒した。これを、熱伝導測定用ペレットとし
て使用するため、プレス法により直径１０ｍｍの成型物
を作成し、またこれを強度測定用に使用するため、縦、
横、長さ、３ｍｍ，４ｍｍ，４０ｍｍの角棒状の成型物
を作成し、これを約５００℃で加熱してバインダを除去
し、後に約１４００℃、９．５ａｔｍの窒素雰囲気中で
焼成した。またその後、約１０００℃の大気中で加熱処
理を行なった。この結果、多孔質で低熱伝導のセラミッ
クスが得られた。EXAMPLES Examples of the present invention will be described in detail below. 5 parts by weight of titanium (Ti) powder as a different powder was added to 100 parts by weight of silicon (Si) powder, and a predetermined amount of an organic binder was added and kneaded in a ball mill for about 12 hours, then taken out and manufactured. It was grainy. In order to use this as a pellet for measuring thermal conductivity, a molded product with a diameter of 10 mm was created using a press method.
A rectangular bar-shaped molded product with width and length of 3 mm, 4 mm, and 40 mm was prepared, and this was heated at about 500° C. to remove the binder, and then fired at about 1400° C. in a nitrogen atmosphere of 9.5 atm. After that, heat treatment was performed in the atmosphere at about 1000°C. As a result, a porous ceramic with low thermal conductivity was obtained.
【０００８】上記実施例の外に、珪素（Ｓｉ）の粉末に
加えるチタン（Ｔｉ）粉末の割合を変え、更に上記チタ
ン（Ｔｉ）粉末の代りにジルコニウム（Ｚｒ）、ハフニ
ウム（Ｈｆ）、イットリウム（Ｙ）、アルミニウム（Ａ
ｌ）などの元素を単体、あるいはそれらの酸化物をそれ
ぞれ添加量を変えて添加して、低熱伝導セラミックスを
作成した。尚これらの実施例群の結果を図１および図２
の図表図に示す。なお、図１及び図２の中で、熱伝導率
はレ−ザ−フラッシュ法で測定し、また、強度は４点曲
げで各試料につき３０本の測定結果の平均値で示してあ
る。In addition to the above embodiments, the ratio of titanium (Ti) powder added to silicon (Si) powder may be changed, and zirconium (Zr), hafnium (Hf), or yttrium ( Y), aluminum (A
Low thermal conductivity ceramics were created by adding elements such as l) alone or their oxides in varying amounts. The results of these examples are shown in Figures 1 and 2.
This is shown in the diagram below. In FIGS. 1 and 2, the thermal conductivity was measured by the laser flash method, and the strength is shown as the average value of 30 measurements for each sample using 4-point bending.
【０００９】本発明の効果を確認するため、次の比較例
に述べるようなサンプルをいくつか作成した。In order to confirm the effects of the present invention, several samples were prepared as described in the following comparative examples.
【００１０】比較例：珪素（Ｓｉ）粉末にチタン（Ｔｉ
）、ジルコニウム（Ｚｒ）、アルミニウム（Ａｌ）元素
を単体で２ｗｔ％を添加し、以下上記実施例と同様の工
程で焼結体を作成し、特性評価を行なった。その結果、
これらはいずれも強度として、約３００ＭＰａ以上であ
ったが、熱伝導率は０．０１２ｃａｌ／ｓ・ｃｍ・ ℃
より大きく、低熱伝導材としては不十分な特性であった
。Comparative example: Titanium (Ti) was added to silicon (Si) powder.
), zirconium (Zr), and aluminum (Al) in an amount of 2 wt % alone, and a sintered body was produced in the same steps as in the above example, and its characteristics were evaluated. the result,
All of these had a strength of about 300 MPa or more, but a thermal conductivity of 0.012 cal/s・cm・℃
It was larger and had insufficient characteristics as a low thermal conductive material.
【００１１】上記実施例群で検討した材料の内、チタン
酸アルミ（ＴｉＡｌ２ Ｏ５ ）：１５％，チタン（Ｔ
ｉ）：１０％添加し、大気中での処理までの工程を経て
得た多孔質で低熱伝導のセラミックス材料について、ト
ルエンで希釈したポリカルボシラン溶液に浸漬し、セラ
ミックスの中に形成された気孔にこれを含浸させた後、
アンモニア雰囲気中で熱分解させ、さらに窒素雰囲気中
での加熱処理により、気孔の表面の一部を非晶質セラミ
ックスで構成した。こうして得られた材料は、図３に示
すように、多孔質セラミックス１の中に２０．１％程度
の気孔３が形成され、該気孔３の中に非晶質セラミック
ス５が付着している。尚７は第２相粒子である。このよ
うにして形成された多孔質セラミックスは、気孔量が２
０．１％、１７．１％に減りもとの材料に比べて約３％
減少しているが、強度は１６％向上した。また、熱伝導
率はこの加工前と同じレベルであることが確認された。Among the materials studied in the above embodiments, aluminum titanate (TiAl2O5): 15%, titanium (T
i): A porous, low thermal conductive ceramic material obtained through a process of adding 10% and processing in the air is immersed in a polycarbosilane solution diluted with toluene, and the pores formed in the ceramic are After impregnating this with
By thermal decomposition in an ammonia atmosphere and further heat treatment in a nitrogen atmosphere, a part of the surface of the pores was made of amorphous ceramics. In the material thus obtained, as shown in FIG. 3, about 20.1% of the pores 3 are formed in the porous ceramic 1, and the amorphous ceramic 5 is attached to the pores 3. Note that 7 is a second phase particle. The porous ceramic thus formed has a pore volume of 2
Approximately 3% compared to the original material, reduced to 0.1% and 17.1%.
However, the strength increased by 16%. It was also confirmed that the thermal conductivity was at the same level as before this processing.
【００１２】また、上記と同様の材料すなわち、チタン
酸アルミ（ＴｉＡｌ２ Ｏ５ ）：１５％，チタン（Ｔ
ｉ）：１０％添加し、大気中での処理までの工程を経て
得た多孔質で低熱伝導のセラミックス材料の表面に、や
や粘度の高いぺ−スト状のポリカルボシランを表面の気
孔が閉塞するように塗布し、アンモニア雰囲気中で熱分
解させ、さらに窒素雰囲気中での加熱処理するという工
程を数回繰り返して、図４に示すように、多孔質セラミ
ックス１の表面に薄い緻密なセラミックス膜９を形成し
た。このようにして得られた材料の特性を調べたところ
、強度はもとの材料に比べ、約１２％向上しており、熱
伝導率はほぼ同等のレベルが保持されていることが確認
された。[0012] In addition, the same materials as above, namely aluminum titanate (TiAl2O5): 15%, titanium (T
i): Polycarbosilane in the form of a paste with a slightly high viscosity is added to the surface of a porous, low thermal conductive ceramic material obtained through a process of adding 10% and processing in the air to block the pores on the surface. By repeating several times the process of coating the porous ceramics 1 in such a manner as to coat the porous ceramic material, thermally decomposing it in an ammonia atmosphere, and then heat-treating it in a nitrogen atmosphere, a thin, dense ceramic film is formed on the surface of the porous ceramic 1, as shown in Figure 4. 9 was formed. When the properties of the material obtained in this way were investigated, it was confirmed that the strength was approximately 12% higher than that of the original material, and that the thermal conductivity remained at approximately the same level. .
【００１３】[0013]
【発明の効果】以上詳細に説明したように、本発明は、
珪素粉末に対してチタン、ジルコニウム、ハフニウム、
イットリウム、硼素、アルミニウム元素を単体あるいは
それらの酸化物として少なくとも５％以上添加し、成型
後窒化焼成しており、さらにこれを酸素を含む雰囲気中
で加熱処理して窒化物の一部を酸化物に変化させて反応
焼結系セラミックスを形成しているから、従来の反応焼
結系セラミックスと比較して強度はチタン酸アルミのよ
うな通常の焼結セラミックスと同等の強度を持ち、しか
も熱伝導率が上記従来の焼結系セラミックスより１桁程
度低い反応焼結系セラミックスを得ることができる。[Effects of the Invention] As explained in detail above, the present invention has the following features:
Titanium, zirconium, hafnium, silicon powder,
At least 5% or more of yttrium, boron, and aluminum elements are added alone or as their oxides, and after molding, nitriding is performed, and this is further heat-treated in an oxygen-containing atmosphere to convert some of the nitrides into oxides. Compared to conventional reaction sintered ceramics, it has the same strength as ordinary sintered ceramics such as aluminum titanate, and has excellent thermal conductivity. It is possible to obtain reactive sintered ceramics whose yield rate is about one order of magnitude lower than the above-mentioned conventional sintered ceramics.
【図１】実施例の特性を示す図表図。FIG. 1 is a diagram showing characteristics of an example.
【図２】別の実施例の特性を示す図表図。FIG. 2 is a diagram showing characteristics of another embodiment.
【図３】本発明に係る多孔質セラミックスの断面図。FIG. 3 is a cross-sectional view of porous ceramics according to the present invention.
【図４】本発明に係る別の多孔質セラミックスの断面図
。FIG. 4 is a cross-sectional view of another porous ceramic according to the present invention.
１・・・・・多孔質セラミックス ３・・・・・気孔 ５・・・・・非晶質セラミックス 1...Porous ceramics 3... Stomata 5...Amorphous ceramics
Claims (8)
の全ての元素及びチタン（Ｔｉ），ジルコニウム（Ｚｒ
），ハフニウム（Ｈｆ），イットリウム（Ｙ），ホウ素
（Ｂ），アルミニウム（Ａｌ）の元素群の中の少なくと
も１種類以上で構成されかつ気孔を１２％以上含む低熱
伝導セラミックス。Claim 1: Silicon (Si), nitrogen (N), oxygen (O),
All elements of titanium (Ti), zirconium (Zr
), hafnium (Hf), yttrium (Y), boron (B), and aluminum (Al), and contains 12% or more of pores.
，ジルコニウム（Ｚｒ），ハフニウム（Ｈｆ），ホウ素
（Ｂ），アルミニウム（Ａｌ）あるいはそれらの酸化物
を少なくとも総重量換算で５ｗｔ％以上含んでいること
を特徴とする請求項１記載の低熱伝導セラミックス。[Claim 2] Titanium (Ti) is used for the silicon (Si).
, zirconium (Zr), hafnium (Hf), boron (B), aluminum (Al), or their oxides at least 5 wt% or more in terms of total weight. .
成されていることを特徴とする請求項１記載の低熱伝導
セラミックス。3. The low thermal conductivity ceramic according to claim 1, wherein an amorphous ceramic is formed inside the pores.
クス膜が形成されていることを特徴とする請求項１記載
の低熱伝導セラミックス。4. The low thermal conductivity ceramic according to claim 1, wherein a dense ceramic film is formed on the surface of the ceramic.
ことを特徴とする請求項４記載の低熱伝導セラミックス
。5. The low thermal conductivity ceramic according to claim 4, wherein the dense ceramic film is amorphous.
（Ｔｉ），ジルコニウム（Ｚｒ），ハフニウム（Ｈｆ）
，イットリウム（Ｙ），ホウ素（Ｂ），アルミニウム（
Ａｌ）の元素群の中の少なくとも１種類以上を５ｗｔ％
以上含む混合粉末を形成する工程と、該混合粉末を用い
て成型体を形成する工程と、該成型体を窒素雰囲気中で
焼結して多孔質の窒化物を形成する工程と、該窒素雰囲
気での焼結工程を経た後酸素を含んだ雰囲気中で加熱し
て前記窒化物の一部を酸化物に変化させる工程を有する
ことを特徴とする低熱伝導セラミックスの製造方法。[Claim 6] Titanium (Ti), zirconium (Zr), and hafnium (Hf) are added to the powder whose main component is silicon (Si).
, yttrium (Y), boron (B), aluminum (
5wt% of at least one type of the element group Al)
A step of forming a mixed powder including the above, a step of forming a molded body using the mixed powder, a step of sintering the molded body in a nitrogen atmosphere to form a porous nitride, and a step of forming a porous nitride in the nitrogen atmosphere. 1. A method for producing a low thermal conductivity ceramic, comprising the step of heating in an oxygen-containing atmosphere after undergoing a sintering step to convert a portion of the nitride into an oxide.
（Ｔｉ），ジルコニウム（Ｚｒ），ハフニウム（Ｈｆ）
，イットリウム（Ｙ），ホウ素（Ｂ），アルミニウム（
Ａｌ）の元素群の中の少なくとも１種類以上を５ｗｔ％
以上含む混合粉末を形成する工程と、該混合粉末を用い
て成型体を形成する工程と、該成型体を窒素雰囲気中で
焼結して多孔質の窒化物を形成する工程と、該窒素雰囲
気での焼結工程を経た後酸素を含んだ雰囲気中で加熱し
て前記窒化物の一部を酸化物に変化させる工程の後、ア
ルコキシド溶液あるいは有機ポリマ溶液を含浸せしめ、
加熱処理して空孔内表面に緻密な非晶質セラミックス膜
を形成することを特徴とする低熱伝導セラミックスの製
造方法。Claim 7: Titanium (Ti), zirconium (Zr), and hafnium (Hf) are added to the powder whose main component is silicon (Si).
, yttrium (Y), boron (B), aluminum (
5wt% of at least one type of the element group Al)
A step of forming a mixed powder including the above, a step of forming a molded body using the mixed powder, a step of sintering the molded body in a nitrogen atmosphere to form a porous nitride, and a step of forming a porous nitride in the nitrogen atmosphere. After undergoing a sintering process, heating in an oxygen-containing atmosphere to convert part of the nitride into an oxide, and then impregnating with an alkoxide solution or an organic polymer solution,
A method for producing low thermal conductivity ceramics, which comprises heat-treating to form a dense amorphous ceramic film on the inner surface of the pores.
（Ｔｉ），ジルコニウム（Ｚｒ），ハフニウム（Ｈｆ）
，イットリウム（Ｙ），ホウ素（Ｂ），アルミニウム（
Ａｌ）の元素群の中の少なくとも１種類以上を５ｗｔ％
以上含む混合粉末を形成する工程と、該混合粉末を用い
て成型体を形成する工程と、該成型体を窒素雰囲気中で
焼結して多孔質の窒化物を形成する工程と、該窒素雰囲
気での焼結工程を経た後酸素を含んだ雰囲気中で加熱し
て前記窒化物の一部を酸化物に変化させる工程の後、ア
ルコキシド溶液あるいは有機ポリマぺ−ストを該焼結体
表面の所望の部分に塗布し、加熱処理して焼結体の表面
の所望の部分に緻密な非晶質セラミックス膜を形成する
ことを特徴とする低熱伝導セラミックスの製造方法。[Claim 8] Titanium (Ti), zirconium (Zr), and hafnium (Hf) are added to the powder whose main component is silicon (Si).
, yttrium (Y), boron (B), aluminum (
5wt% of at least one type of the element group Al)
A step of forming a mixed powder including the above, a step of forming a molded body using the mixed powder, a step of sintering the molded body in a nitrogen atmosphere to form a porous nitride, and a step of forming a porous nitride in the nitrogen atmosphere. After a sintering process in which a part of the nitride is converted into an oxide by heating in an oxygen-containing atmosphere, an alkoxide solution or organic polymer paste is applied to the desired surface of the sintered body. 1. A method for producing a low thermal conductivity ceramic, which comprises applying the film to a desired part of the surface of a sintered body and forming a dense amorphous ceramic film on a desired part of the surface of a sintered body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3145677A JPH04342470A (en) | 1991-05-21 | 1991-05-21 | Low heat-conductive ceramic and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3145677A JPH04342470A (en) | 1991-05-21 | 1991-05-21 | Low heat-conductive ceramic and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04342470A true JPH04342470A (en) | 1992-11-27 |
Family
ID=15390538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3145677A Pending JPH04342470A (en) | 1991-05-21 | 1991-05-21 | Low heat-conductive ceramic and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04342470A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130149514A1 (en) * | 2010-07-30 | 2013-06-13 | Kyocera Corporation | Insulating sheet, method of manufacturing the same, and method of manufacturing structure using the insulating sheet |
-
1991
- 1991-05-21 JP JP3145677A patent/JPH04342470A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130149514A1 (en) * | 2010-07-30 | 2013-06-13 | Kyocera Corporation | Insulating sheet, method of manufacturing the same, and method of manufacturing structure using the insulating sheet |
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