JPH04315483A - Manufacture of josephson tunnel junction - Google Patents
Manufacture of josephson tunnel junctionInfo
- Publication number
- JPH04315483A JPH04315483A JP3080349A JP8034991A JPH04315483A JP H04315483 A JPH04315483 A JP H04315483A JP 3080349 A JP3080349 A JP 3080349A JP 8034991 A JP8034991 A JP 8034991A JP H04315483 A JPH04315483 A JP H04315483A
- Authority
- JP
- Japan
- Prior art keywords
- metal mask
- superconducting film
- barrier layer
- tunnel junction
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000002184 metal Substances 0.000 claims abstract description 28
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 9
- 230000007246 mechanism Effects 0.000 abstract description 6
- 238000009751 slip forming Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】この発明はジョセフソントンネル
接合の製造方法に関し、特に超電導電子素子の製造に必
要な酸化物超電導膜によるジョセフソントンネル接合の
製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a Josephson tunnel junction, and more particularly to a method for manufacturing a Josephson tunnel junction using an oxide superconducting film necessary for manufacturing superconducting electronic devices.
【0002】0002
【従来の技術】酸化物超電導体の膜表面は、大気中で変
成しやすいため、高品質のジョセフソントンネル接合を
形成するためには、同一真空槽内で連続的に下部超電導
膜、バリヤ層、上部超電導膜を形成することが必要であ
る。しかしながら、積層膜を形成後、フォトリソグラフ
ィによりジョセフソントンネル接合を形成することは、
複雑なプロセスが必要になるばかりでなく、エッチング
などのプロセスにより酸化物超電導膜の特性の劣化を生
じる可能性が大きい。そのため、メタルマスクを用いて
同一真空槽内ですべての膜を成膜し、ジョセフソントン
ネル接合を形成する方法が実施されている。図3は例え
ば第51回応用物理学会学術講演会講演予講集27p−
ZB−1に示されたジョセフソントンネル接合を示す平
面図である。図において、1は基板、2は基板1の上に
形成された下部超電導膜、3は下部超電導膜の端部、4
は下部超電導膜2の上に形成されたバリヤ層、5はバリ
ヤ層4の上に形成された上部超電導膜である。[Prior Art] The film surface of an oxide superconductor is easily metamorphosed in the atmosphere, so in order to form a high-quality Josephson tunnel junction, the lower superconducting film and the barrier layer must be continuously formed in the same vacuum chamber. , it is necessary to form an upper superconducting film. However, forming a Josephson tunnel junction by photolithography after forming a laminated film is difficult.
Not only does this require a complicated process, but there is a high possibility that the characteristics of the oxide superconducting film will deteriorate due to processes such as etching. Therefore, a method has been implemented in which all the films are formed in the same vacuum chamber using a metal mask to form a Josephson tunnel junction. Figure 3 shows, for example, the 51st Japan Society of Applied Physics Academic Conference Lecture Preliminary Lecture Collection, page 27.
FIG. 2 is a plan view of the Josephson tunnel junction shown in ZB-1. In the figure, 1 is a substrate, 2 is a lower superconducting film formed on the substrate 1, 3 is an end of the lower superconducting film, and 4 is a lower superconducting film formed on the substrate 1.
5 is a barrier layer formed on the lower superconducting film 2, and 5 is an upper superconducting film formed on the barrier layer 4.
【0003】従来のジョセフソントンネル接合は上記の
ように形成されているので、下部超電導膜2、バリヤ層
4、及び上部超電導膜5のパターンはそれぞれ異なって
いる。Since the conventional Josephson tunnel junction is formed as described above, the patterns of the lower superconducting film 2, the barrier layer 4, and the upper superconducting film 5 are different from each other.
【0004】0004
【発明が解決しようとする課題】上記のような従来のジ
ョセフソントンネル接合の製造方法では、異なったパタ
ーンを形成するために、各成膜プロセスごとに、真空槽
内で真空を維持したままメタルマスクを交換しなければ
ならず、そのための特殊で複雑なメタルマスク交換機構
が必要であるという問題点があった。また、真空槽内で
メタルマスクを設置するために、基板とメタルマスクと
を密着させることができず、微細なパターンは形成でき
ないという問題点があつた。さらに、バリヤ層4が薄い
ために下部超電導膜の端部3において上部超電導膜5と
の短絡が発生しやすいという問題点があった。[Problems to be Solved by the Invention] In the conventional method for manufacturing Josephson tunnel junctions as described above, in order to form different patterns, metal is deposited in a vacuum chamber while maintaining a vacuum during each film formation process. There was a problem in that the mask had to be replaced, and a special and complicated metal mask replacement mechanism was required for that purpose. Further, since the metal mask is installed in a vacuum chamber, there is a problem that the substrate and the metal mask cannot be brought into close contact with each other, and a fine pattern cannot be formed. Furthermore, since the barrier layer 4 is thin, a short circuit with the upper superconducting film 5 is likely to occur at the end 3 of the lower superconducting film.
【0005】この発明はかかる問題点を解決するために
なされたもので、複雑なメタルマスク交換機構のない簡
便な方法で、かつ微細なパターンの形成も可能なジョセ
フソントンネル接合の製造方法を提供することを目的と
している。The present invention has been made to solve these problems, and provides a method for manufacturing Josephson tunnel junctions that is simple and does not require a complicated metal mask exchange mechanism, and also allows for the formation of fine patterns. It is intended to.
【0006】[0006]
【課題を解決するための手段】この発明に係わるジョセ
フソントンネル接合の製造方法は、基板上に下部超電導
膜を形成後、引き続いてバリヤ層を同一のメタルマスク
を用いて同一真空槽内で形成し、その後上記真空槽より
試料を取り出し、再び上記真空槽内で上部超電導膜を形
成するようにしたものである。[Means for Solving the Problems] A method for manufacturing a Josephson tunnel junction according to the present invention is to form a lower superconducting film on a substrate, and then to form a barrier layer in the same vacuum chamber using the same metal mask. After that, the sample is taken out from the vacuum chamber, and the upper superconducting film is formed again in the vacuum chamber.
【0007】また、この発明に係わるジョセフソントン
ネル接合の製造方法は、真空槽より試料取り出し後、絶
縁層を形成し、その後再びバリヤ層を形成し、引き続い
て上記真空槽内で上部超電導膜を形成するようにしたも
のである。[0007] Furthermore, in the method for manufacturing a Josephson tunnel junction according to the present invention, after taking out a sample from a vacuum chamber, an insulating layer is formed, a barrier layer is then formed again, and an upper superconducting film is subsequently formed in the vacuum chamber. It was designed so that it could be formed.
【0008】[0008]
【作 用】この発明においては、同一のメタルマスク
を用いて下部超電導膜とバリヤ層を連続的に形成する。
すると、下部超電導膜の表面はバリヤ層に覆われている
ので、この試料を大気中に取り出しても下部超電導膜の
表面の劣化は生じない。従って、試料を真空槽より大気
中に取り出してメタルマスクを交換しても、ジョセフソ
ントンネル接合の特性の劣化は生じない。[Operation] In this invention, the lower superconducting film and the barrier layer are continuously formed using the same metal mask. Then, since the surface of the lower superconducting film is covered with a barrier layer, the surface of the lower superconducting film does not deteriorate even if this sample is taken out into the atmosphere. Therefore, even if the sample is taken out of the vacuum chamber into the atmosphere and the metal mask is replaced, the characteristics of the Josephson tunnel junction will not deteriorate.
【0009】また、この発明においては、下部超電導膜
とバリヤ層を連続的に形成する後絶縁層を形成し、その
上に再びバリヤ層を形成する。絶縁層の形成により下部
超電導膜の端部と上部超電導膜との短絡を防ぐことがで
き、再度のバリヤ層の形成でバリヤ層と上部超電導膜と
の表面の特性を改善することができる。Further, in the present invention, after the lower superconducting film and the barrier layer are successively formed, the insulating layer is formed, and the barrier layer is again formed thereon. Formation of the insulating layer can prevent short circuits between the ends of the lower superconducting film and the upper superconducting film, and forming the barrier layer again can improve the surface characteristics of the barrier layer and the upper superconducting film.
【0010】0010
実施例 1
以下、この発明の一実施例を図について説明する。図1
、図2はそれぞれ本発明の一実施例を示す断面図と平面
図である。図1、図2において、1ー5は上記従来製造
方法と同一のものであり、6は絶縁層である。Embodiment 1 An embodiment of the present invention will be described below with reference to the drawings. Figure 1
, and FIG. 2 are a sectional view and a plan view, respectively, showing an embodiment of the present invention. In FIGS. 1 and 2, 1-5 are the same as those in the conventional manufacturing method described above, and 6 is an insulating layer.
【0011】本実施例では同一真空槽内で下部超電導膜
2とバリヤ槽4とを同一のメタルマスクを用いて即ちメ
タルマスクを交換することなく連続的に成膜する。その
後試料を真空槽より大気中に取り出し、メタルマスクを
交換した後同一の真空槽内で絶縁層6を形成する。その
後再び真空槽より試料を大気中に取り出し、再びメタル
マスクを交換した後同一の真空槽内で上部超電導膜5を
形成する。このようにして、従来用いられていた真空槽
内で真空を維持したままメタルマスク7を交換するため
のメタルマスクの交換機構を必要とすることなく、ジョ
セフソントンネル接合を形成できる。また、メタルマス
クの交換機構が不要なので、メタルマスクを基板に密着
させて取り付けることが出来、微細なパターンを形成す
ることが可能である。さらに、絶縁層6を形成すること
により、下部超電導膜の端部3と上部超電導膜5との短
絡を防ぐことが出来る。In this embodiment, the lower superconducting film 2 and the barrier tank 4 are formed continuously in the same vacuum chamber using the same metal mask, that is, without replacing the metal mask. Thereafter, the sample is taken out of the vacuum chamber into the atmosphere, and after replacing the metal mask, an insulating layer 6 is formed in the same vacuum chamber. Thereafter, the sample is taken out of the vacuum chamber into the atmosphere again, and after replacing the metal mask again, the upper superconducting film 5 is formed in the same vacuum chamber. In this way, a Josephson tunnel junction can be formed without requiring a metal mask exchange mechanism for exchanging the metal mask 7 while maintaining a vacuum in a vacuum chamber, which has been conventionally used. Furthermore, since a metal mask exchange mechanism is not required, the metal mask can be attached to the substrate in close contact with the substrate, making it possible to form fine patterns. Furthermore, by forming the insulating layer 6, it is possible to prevent a short circuit between the end portion 3 of the lower superconducting film and the upper superconducting film 5.
【0012】実施例 2
上記実施例では、絶縁層6を形成後にメタルマスクを交
換して上部超電導膜5を形成したが、バリヤ層4と上部
超電導膜5との界面の特性を改善するために、メタルマ
スク交換後、絶縁層6の上に再びバリヤ層4を形成し続
いて上部超電導膜5を形成しても良い。Example 2 In the above example, the metal mask was replaced after forming the insulating layer 6 to form the upper superconducting film 5. However, in order to improve the characteristics of the interface between the barrier layer 4 and the upper superconducting film 5, After replacing the metal mask, the barrier layer 4 may be formed again on the insulating layer 6, and then the upper superconducting film 5 may be formed.
【0013】[0013]
【発明の効果】以上のように、この発明は下部超電導膜
とバリヤ層を同一のメタルマスクで連続的に形成するよ
うにしたので、複雑なフォトリソグラフィのプロセスや
メタルマスクの交換機構が不要になり、簡便な方法で微
細なパターンを有するジョセフソントンネル接合の製造
が可能になるという効果を奏する。[Effects of the Invention] As described above, the present invention allows the lower superconducting film and the barrier layer to be formed continuously using the same metal mask, thereby eliminating the need for complicated photolithography processes and metal mask exchange mechanisms. Therefore, it is possible to manufacture a Josephson tunnel junction having a fine pattern using a simple method.
【0014】また、この発明は、絶縁層を上部超電導膜
の下に設けるようにしたので、下部超電導膜の端部と上
部超電導膜との短絡を防ぐことができ、また、絶縁層の
上に再びバリヤ層を形成し続いて上部超電導膜を形成す
るようにしたので、バリヤ層と上部超電導膜との界面の
特性を改善することができるという効果を奏する。Further, in the present invention, since the insulating layer is provided under the upper superconducting film, it is possible to prevent short circuits between the ends of the lower superconducting film and the upper superconducting film. Since the barrier layer is formed again and then the upper superconducting film is formed, it is possible to improve the characteristics of the interface between the barrier layer and the upper superconducting film.
【図1】この発明の一実施例を示す断面図である。FIG. 1 is a sectional view showing an embodiment of the present invention.
【図2】この発明の一実施例を示す平面図である。FIG. 2 is a plan view showing an embodiment of the invention.
【図3】従来のジョセフソントンネル接合を示す平面図
である。FIG. 3 is a plan view showing a conventional Josephson tunnel junction.
1 基板 2 下部超電導膜 3 下部超電導膜の端部 4 バリヤ層 5 上部超電導膜 6 絶縁層 1 Substrate 2 Lower superconducting film 3 End of lower superconducting film 4 Barrier layer 5 Upper superconducting film 6 Insulating layer
Claims (2)
続いてバリヤ層を同一のメタルマスクを用いて同一真空
槽内で形成し、その後上記真空槽より試料を取り出し、
再び上記真空槽内で上部超電導膜を形成することを特徴
とするジョセフソントンネル接合の製造方法。1. After forming a lower superconducting film on a substrate, successively forming a barrier layer in the same vacuum chamber using the same metal mask, and then taking out a sample from the vacuum chamber,
A method for manufacturing a Josephson tunnel junction, comprising forming an upper superconducting film again in the vacuum chamber.
形成し、その後再びバリヤ層を形成し、引き続いて上記
真空槽内で上部超電導膜を形成することを特徴とする請
求項第1項記載のジョセフソントンネル接合の製造方法
。2. After taking out the sample from the vacuum chamber, an insulating layer is formed, then a barrier layer is formed again, and then an upper superconducting film is formed in the vacuum chamber. A method for manufacturing Josephson tunnel junctions.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3080349A JPH04315483A (en) | 1991-04-15 | 1991-04-15 | Manufacture of josephson tunnel junction |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3080349A JPH04315483A (en) | 1991-04-15 | 1991-04-15 | Manufacture of josephson tunnel junction |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04315483A true JPH04315483A (en) | 1992-11-06 |
Family
ID=13715784
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3080349A Pending JPH04315483A (en) | 1991-04-15 | 1991-04-15 | Manufacture of josephson tunnel junction |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04315483A (en) |
-
1991
- 1991-04-15 JP JP3080349A patent/JPH04315483A/en active Pending
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