JPH04309532A - Surface treatment of teflon jig - Google Patents
Surface treatment of teflon jigInfo
- Publication number
- JPH04309532A JPH04309532A JP3074973A JP7497391A JPH04309532A JP H04309532 A JPH04309532 A JP H04309532A JP 3074973 A JP3074973 A JP 3074973A JP 7497391 A JP7497391 A JP 7497391A JP H04309532 A JPH04309532 A JP H04309532A
- Authority
- JP
- Japan
- Prior art keywords
- teflon
- jig
- pfa
- treatment
- cof
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004809 Teflon Substances 0.000 title claims abstract description 32
- 229920006362 Teflon® Polymers 0.000 title claims abstract description 32
- 238000004381 surface treatment Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000000843 powder Substances 0.000 claims abstract description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims abstract description 8
- 239000001257 hydrogen Substances 0.000 claims abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- 238000009832 plasma treatment Methods 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 4
- 239000011737 fluorine Substances 0.000 claims abstract description 4
- 239000008188 pellet Substances 0.000 claims abstract description 4
- 238000004140 cleaning Methods 0.000 claims abstract description 3
- 229920000642 polymer Polymers 0.000 claims description 9
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 4
- 230000007062 hydrolysis Effects 0.000 claims description 3
- 238000006460 hydrolysis reaction Methods 0.000 claims description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 3
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 3
- 238000006116 polymerization reaction Methods 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims 1
- -1 polytetrafluoroethylene Polymers 0.000 claims 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000007788 roughening Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003682 fluorination reaction Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000004334 fluoridation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Landscapes
- Treatments Of Macromolecular Shaped Articles (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明はテフロン治具の表面処理
方法に関するものであり、特に半導体製造工程で使用さ
れる治具の表面処理方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for surface treatment of Teflon jigs, and more particularly to a method for surface treatment of jigs used in semiconductor manufacturing processes.
【０００２】0002
【従来の技術】近年、超ＬＳＩの微細化にともない半導
体基板保管時におけるテフロン治具からの遊離ＨＦによ
る半導体基板のエッチング作用に表面荒れが問題となっ
ている。従来、デュポン社によりフッソガスを用いてテ
フロン治具の表面に存在する不安定末端基−ＣＦ２ＣＨ
２ＯＨ、−ＣＯＮＨ２、および−ＣＯＦ基を安定な−Ｃ
Ｆ３基に転化することにより遊離ＨＦを低減する技術（
特開昭６２−１０４８２２）が発表されており商品化さ
れている。この技術は治具に成形されるまえの段階であ
るテフロン重合体の粉末、ペレットやフレーク状のもの
を１０％から２５％希釈フッソガスと圧力１気圧から１
０気圧で温度１５０℃から２５０℃で４時間から１６時
間フッソ化処理を行うものである。2. Description of the Related Art In recent years, with the miniaturization of VLSIs, surface roughness has become a problem due to the etching effect of semiconductor substrates caused by free HF from Teflon jigs during storage of semiconductor substrates. Previously, DuPont used fluorine gas to remove unstable terminal groups -CF2CH that existed on the surface of Teflon jigs.
2OH, -CONH2, and -COF groups to stabilize -C
Technology to reduce free HF by converting it to F3 group (
JP-A-62-104822) has been published and commercialized. This technology uses Teflon polymer powder, pellets, or flakes at a stage before being formed into a jig, using 10% to 25% diluted fluorine gas and a pressure of 1 atm to 1 atm.
Fluorination treatment is carried out at 0 atmospheric pressure and at a temperature of 150°C to 250°C for 4 to 16 hours.
【０００３】0003
【発明が解決しようとする課題】しかし、上記のような
方法では、テフロン治具の最表面のみしかフッソ化され
ずテフロン治具表面近傍のフッソ化処理が不十分である
ため、治具への成形の際および実際の半導体プロセスで
使用した場合、洗浄プロセス等の薬液処理等の繰り返し
使用により未処理の不安定末端基−ＣＦ２ＣＨ２ＯＨ、
−ＣＯＮＨ２、および−ＣＯＦ基が露出することにより
、加水分解または熱分解により遊離ＨＦが発生し半導体
基板をエッチングし表面荒れを引き起こすという問題点
があった。[Problems to be Solved by the Invention] However, in the above method, only the outermost surface of the Teflon jig is fluorinated, and the fluoridation treatment near the surface of the Teflon jig is insufficient. When used during molding and in actual semiconductor processes, untreated unstable end groups -CF2CH2OH,
When the -CONH2 and -COF groups are exposed, there is a problem that free HF is generated by hydrolysis or thermal decomposition, etching the semiconductor substrate and causing surface roughness.
【０００４】また、上記のような方法ではフッソ化処理
に４時間以上要するという量産上の課題があった。[0004] Furthermore, the above method has a problem in mass production in that the fluorination treatment requires more than 4 hours.
【０００５】そこで本発明は上記課題に鑑み、テフロン
治具の表面近傍に存在する不安定な末端基−ＣＦ２ＣＨ
２ＯＨ、−ＣＯＮＨ２、および−ＣＯＦ基を完全に、か
つ短時間にフッソ化することを可能とする表面処理方法
を提供するものである。In view of the above-mentioned problems, the present invention has been developed to solve the problem of unstable terminal groups -CF2CH existing near the surface of the Teflon jig.
The present invention provides a surface treatment method that allows 2OH, -CONH2, and -COF groups to be completely fluorinated in a short time.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するため
に、ＰＦＡを原材料とするテフロン治具の原材料であっ
て、前記治具に成形されるまえの段階であるテフロン重
合体の粉末、ペレットやフレーク状のものを、酸素プラ
ズマで処理することにより表面を清浄化する工程と、水
素プラズマ処理を行うことにより、前記ＰＦＡに含まれ
る−ＣＯＦ、−ＣＯＮＨ２および−ＣＦ２ＣＨ２ＯＨを
還元する工程と、フッソ系ガスを含むプラズマにより処
理する工程により、前記ＰＦＡ重合の際に生成する不安
定末端基−ＣＦ２ＣＨ２ＯＨ、−ＣＯＮＨ２、および−
ＣＯＦを−ＣＦ３基へ転化することにより、加水分解ま
たは熱分解により生成するＨＦの生成量を低減すること
を特徴とするテフロン治具の表面処理方法としたもので
ある。[Means for Solving the Problems] In order to solve the above problems, powders and pellets of Teflon polymer, which are raw materials for Teflon jigs made from PFA and are at a stage before being molded into the jigs, have been developed. A step of cleaning the surface of the PFA by treating it with oxygen plasma, a step of reducing -COF, -CONH2 and -CF2CH2OH contained in the PFA by performing a hydrogen plasma treatment, and a step of reducing -COF, -CONH2 and -CF2CH2OH contained in the PFA, The unstable end groups -CF2CH2OH, -CONH2, and - generated during the PFA polymerization are treated by plasma containing a system gas.
This is a surface treatment method for a Teflon jig characterized by reducing the amount of HF produced by hydrolysis or thermal decomposition by converting COF into -CF3 groups.
【０００７】[0007]
【作用】本発明は上記方法により、−ＣＦ２ＣＨ２ＯＨ
、−ＣＯＮＨ２、および−ＣＯＦ基を減圧下のプラズマ
処理により安定な−ＣＦ３基に転化することが可能であ
る。また、テフロン治具の不安定末端基−ＣＦ２ＣＨ２
ＯＨ、−ＣＯＮＨ２、および−ＣＯＦ基を最表面のみな
らず表面近傍までフッソ化することが可能であるため、
テフロン治具の繰り返し使用による内部の不安定末端基
の露出を防ぐことが可能であり、テフロン治具の実プロ
セス使用時における遊離ＨＦの発生を著しく抑制するこ
とができる。[Operation] The present invention provides -CF2CH2OH by the above method.
, -CONH2, and -COF groups can be converted to stable -CF3 groups by plasma treatment under reduced pressure. In addition, the unstable end group of the Teflon jig -CF2CH2
Because it is possible to fluorinate OH, -CONH2, and -COF groups not only on the outermost surface but also near the surface,
It is possible to prevent the internal unstable end groups from being exposed due to repeated use of the Teflon jig, and it is possible to significantly suppress the generation of free HF when the Teflon jig is used in an actual process.
【０００８】[0008]
【実施例】以下、本発明の一実施例の半導体装置製造用
テフロン治具の表面処理方法について説明する。[Embodiment] A method for surface treatment of a Teflon jig for manufacturing semiconductor devices according to an embodiment of the present invention will be described below.
【０００９】まず、市販のＰＦＡ重合体粉末試料をプラ
ズマ処理装置に導入し、１００Ｐａ程度の減圧下で２．
４５ＧＨｚのマイクロ波を照射し酸素プラズマ処理を５
分間程度行うことにより、粉末表面に付着した油等の有
機成分を除去すると共に、前記粉末の表面をかるくエッ
チングすることにより活性なＰＦＡ清浄表面を得る。こ
のとき酸素ガスは５００ｓｃｃｍ程度が望ましい。First, a commercially available PFA polymer powder sample was introduced into a plasma processing apparatus and subjected to 2.
45GHz microwave irradiation and oxygen plasma treatment
By performing this for about a minute, organic components such as oil adhering to the powder surface are removed, and the surface of the powder is lightly etched to obtain an active PFA-cleaned surface. At this time, the oxygen gas is desirably about 500 sccm.
【００１０】次に１０％程度の希釈水素ガス（希釈ガス
としてはＨｅを用いた）５００ｓｃｃｍでプラズマ処理
装置内を置換し、水素プラズマ処理を減圧化力１００Ｐ
ａで１０分間程度行いＰＦＡ重合体粉末試料の不安定末
端基−ＣＦ２ＣＨ２ＯＨ、−ＣＯＮＨ２、および−ＣＯ
Ｆ基を還元し−ＣＨ３基に転化する。このとき水素プラ
ズマで−ＣＨ３基に転化するのはＰＦＡ重合体粉末試料
の不安定末端基−ＣＦ２ＣＨ２ＯＨ、−ＣＯＮＨ２、お
よび−ＣＯＦ基を直接−ＣＦ３基にしようとすれば、完
全に−ＣＦ３基までにならないものがあるからである。Next, the inside of the plasma processing apparatus was replaced with about 10% diluted hydrogen gas (He was used as the diluent gas) at 500 sccm, and the hydrogen plasma processing was performed at a reduced pressure of 100 P.
a for about 10 minutes to determine the unstable end groups -CF2CH2OH, -CONH2, and -CO of the PFA polymer powder sample.
The F group is reduced and converted to a -CH3 group. At this time, the unstable terminal groups -CF2CH2OH, -CONH2, and -COF groups of the PFA polymer powder sample that are converted to -CH3 groups by hydrogen plasma are completely converted to -CF3 groups if you try to convert them directly to -CF3 groups. This is because there are things that cannot be done.
【００１１】さらに２０％程度の希釈Ｆ２ガス（希釈ガ
スとしてはＨｅを用いた）１００ｓｃｃｍでプラズマ処
理装置内を置換し、フッソプラズマ処理を減圧下１００
Ｐａ程度で３０分間程度行うことにより前記水素プラズ
マ処理により生成した−ＣＨ３基は容易に−ＣＦ３基へ
転化する。以上のようにしてフッソ化処理を施したＰＦ
Ａ重合体粉末を成形加工し、半導体基板収納用テフロン
カセットを作製する。本発明による表面処理を施して作
製したテフロンカセットは実プロセスで繰り返し使用し
たのちも、劣化による遊離ＨＦは検出されなかった。Furthermore, the inside of the plasma processing apparatus was replaced with about 20% diluted F2 gas (He was used as the diluent gas) at 100 sccm, and the fluoroplasma treatment was performed at 100 sccm under reduced pressure.
By carrying out the treatment at about Pa for about 30 minutes, the -CH3 groups generated by the hydrogen plasma treatment are easily converted into -CF3 groups. PF treated with fluoride as described above
A polymer powder is molded to produce a Teflon cassette for storing semiconductor substrates. No free HF due to deterioration was detected in the Teflon cassette prepared by surface treatment according to the present invention even after repeated use in actual processes.
【００１２】本実施例は半導体基板収納用テフロンカセ
ットのみならず真空ピンセットのテフロンチップやその
他半導体製造工程に使用されるテフロン治具に適用可能
なことは言うまでもない。It goes without saying that this embodiment is applicable not only to Teflon cassettes for storing semiconductor substrates, but also to Teflon chips for vacuum tweezers and other Teflon jigs used in semiconductor manufacturing processes.
【００１３】また、本実施例ではＰＦＡの場合について
説明したが、ＰＴＦＥについても同様の方法が適用でき
る。Furthermore, in this embodiment, the case of PFA has been explained, but the same method can be applied to PTFE as well.
【００１４】[0014]
【発明の効果】以上のように本発明はテフロン治具の原
材料である重合体粉末に減圧下での一連の酸素プラズマ
、水素プラズマ、フッソプラズマ処理工程を行なうこと
により、表面がポーラス（多孔質）なテフロン重合体粉
末を高効率、かつ短時間で前記粉末の表面のみならず内
部に存在する不安定末端基のフッソ化が可能である。
そのため、テフロン治具への成形の際にも不安定末端基
が治具表面に露出することがないため、実プロセスでの
繰り返し使用によるテフロン治具の劣化に伴う遊離ＨＦ
の生成を抑制し、遊離ＨＦに起因する半導体基板のエッ
チングによる表面荒れを防止することが可能であり、そ
の実用効果は大きい。Effects of the Invention As described above, the present invention provides a porous surface by subjecting the polymer powder, which is the raw material for the Teflon jig, to a series of oxygen plasma, hydrogen plasma, and fluoroplasma treatment steps under reduced pressure. ) Teflon polymer powder can be fluorinated with unstable end groups not only on the surface but also inside the powder in a short time and with high efficiency. Therefore, even when forming into a Teflon jig, unstable end groups are not exposed on the jig surface, so free HF is released due to deterioration of the Teflon jig due to repeated use in the actual process.
It is possible to suppress the generation of HF and prevent surface roughening of the semiconductor substrate due to etching caused by free HF, and its practical effects are great.
Claims (2)
ーフルオロアルキルビニルエーテル共重合体）を原材料
とするテフロン治具の原材料であって、前記治具に成形
されるまえの段階であるテフロン重合体の粉末、ペレッ
トやフレーク状のものを、酸素プラズマで処理すること
により表面を清浄化する工程と、水素プラズマ処理を行
うことにより、前記ＰＦＡに含まれる−ＣＯＦ、−ＣＯ
ＮＨ２および−ＣＦ２ＣＨ２ＯＨを還元する工程と、フ
ッソ系ガスを含むプラズマにより処理する工程により、
前記ＰＦＡ重合の際に生成する不安定末端基−ＣＦ２Ｃ
Ｈ２ＯＨ、−ＣＯＮＨ２、および−ＣＯＦを−ＣＦ３（
パーフルオロメチル）基へ転化することにより、加水分
解または熱分解により生成するＨＦの生成量を低減する
ことを特徴とするテフロン治具の表面処理方法。1. Teflon polymer powder, which is a raw material for a Teflon jig made from PFA (tetrafluoroethylene/perfluoroalkyl vinyl ether copolymer), at a stage before being molded into the jig; The process of cleaning the surface of pellets or flakes by treating them with oxygen plasma and the hydrogen plasma treatment remove the -COF and -CO contained in the PFA.
Through the process of reducing NH2 and -CF2CH2OH and the process of treatment with plasma containing fluorine-based gas,
Unstable end group -CF2C generated during PFA polymerization
H2OH, -CONH2, and -COF to -CF3(
A method for surface treatment of a Teflon jig, characterized in that the amount of HF produced by hydrolysis or thermal decomposition is reduced by converting it into a perfluoromethyl (perfluoromethyl) group.
ン）を原材料とする請求項１記載のテフロン治具の表面
処理方法。2. The method for surface treatment of a Teflon jig according to claim 1, wherein the raw material is PTFE (polytetrafluoroethylene).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3074973A JPH04309532A (en) | 1991-04-08 | 1991-04-08 | Surface treatment of teflon jig |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3074973A JPH04309532A (en) | 1991-04-08 | 1991-04-08 | Surface treatment of teflon jig |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04309532A true JPH04309532A (en) | 1992-11-02 |
Family
ID=13562748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3074973A Pending JPH04309532A (en) | 1991-04-08 | 1991-04-08 | Surface treatment of teflon jig |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04309532A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996017882A1 (en) * | 1994-12-08 | 1996-06-13 | Arplas Gesellschaft Für Plasmatechnologie Mbh | Process for chemically modifying thermoplastics containing alkyl groups |
| EP0738751A1 (en) * | 1995-04-22 | 1996-10-23 | Messer Griesheim Gmbh | Process for conditioning organic substrate surfaces |
| US5599489A (en) * | 1993-01-18 | 1997-02-04 | Onoda Cement Co., Ltd. | Preparing molded articles of fluorine-containing polymer with increased water-repellency |
| KR100467901B1 (en) * | 2002-01-22 | 2005-01-24 | 이우석 | Method for coating jigs with TEFLON |
| WO2007089016A1 (en) * | 2006-02-03 | 2007-08-09 | Daikin Industries, Ltd. | Method for producing stabilized fluoropolymer |
| CN103665215A (en) * | 2013-11-29 | 2014-03-26 | 中昊晨光化工研究院有限公司 | PTFE suspension resin end group fluorination treatment method |
-
1991
- 1991-04-08 JP JP3074973A patent/JPH04309532A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5599489A (en) * | 1993-01-18 | 1997-02-04 | Onoda Cement Co., Ltd. | Preparing molded articles of fluorine-containing polymer with increased water-repellency |
| WO1996017882A1 (en) * | 1994-12-08 | 1996-06-13 | Arplas Gesellschaft Für Plasmatechnologie Mbh | Process for chemically modifying thermoplastics containing alkyl groups |
| US5904817A (en) * | 1994-12-08 | 1999-05-18 | Arplas Gesellschaft Fur Plasmatechnologie Mbh | Process for the chemical modification of thermoplastics that contain alkyl groups |
| EP0738751A1 (en) * | 1995-04-22 | 1996-10-23 | Messer Griesheim Gmbh | Process for conditioning organic substrate surfaces |
| US5741545A (en) * | 1995-04-22 | 1998-04-21 | Messer Griesheim Gmbh | Process for conditioning organic substrate surfaces |
| CN1083860C (en) * | 1995-04-22 | 2002-05-01 | 梅塞尔·格里斯海姆有限公司 | Process for conditioning organic substrate surfaces |
| KR100467901B1 (en) * | 2002-01-22 | 2005-01-24 | 이우석 | Method for coating jigs with TEFLON |
| WO2007089016A1 (en) * | 2006-02-03 | 2007-08-09 | Daikin Industries, Ltd. | Method for producing stabilized fluoropolymer |
| US7754821B2 (en) | 2006-02-03 | 2010-07-13 | Daikin Industries Ltd. | Method for producing stabilized fluoropolymer |
| JP5167818B2 (en) * | 2006-02-03 | 2013-03-21 | ダイキン工業株式会社 | Method for producing stabilized fluoropolymer |
| CN103665215A (en) * | 2013-11-29 | 2014-03-26 | 中昊晨光化工研究院有限公司 | PTFE suspension resin end group fluorination treatment method |
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