JPH02298829A - Heat treatment apparatus - Google Patents
Heat treatment apparatusInfo
- Publication number
- JPH02298829A JPH02298829A JP12105489A JP12105489A JPH02298829A JP H02298829 A JPH02298829 A JP H02298829A JP 12105489 A JP12105489 A JP 12105489A JP 12105489 A JP12105489 A JP 12105489A JP H02298829 A JPH02298829 A JP H02298829A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- measured
- wafer
- heated
- thermocouple
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims description 16
- 230000005855 radiation Effects 0.000 claims abstract description 28
- 238000009529 body temperature measurement Methods 0.000 claims description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 abstract description 3
- 239000010937 tungsten Substances 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 19
- 238000005259 measurement Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Landscapes
- Radiation Pyrometers (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体製造装置などに用いられる熱処理装
置の温度測定、制御方法に係る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a temperature measurement and control method for a heat treatment apparatus used in semiconductor manufacturing equipment and the like.
この種熱処理装置において、被加熱物の温度制御は最大
の技術課題である。この温度制御のための温度測定方法
の１つに熱電対を用いる方法があるが、この方法には以
下の欠点がある。すなわち、（１１被加熱物が密閉容器
内で加熱されるため、熱電対からの放出ガスにより被加
熱物が汚染される。In this type of heat treatment apparatus, controlling the temperature of the object to be heated is the biggest technical challenge. One of the temperature measurement methods for temperature control is a method using a thermocouple, but this method has the following drawbacks. That is, (11) Since the object to be heated is heated in a closed container, the object to be heated is contaminated by the gas released from the thermocouple.
（２）被加熱物表面の温度分布測定のために複数の熱電
対を被加熱物に接触させると温度分布が変化する。(2) When a plurality of thermocouples are brought into contact with a heated object to measure the temperature distribution on the surface of the heated object, the temperature distribution changes.
（３）高周波電源を用いて高周波加熱を行う場合には、
高周波に基づく電磁波ノイズにより測定が不可能になる
。(3) When performing high-frequency heating using a high-frequency power source,
Electromagnetic noise based on high frequencies makes measurements impossible.
などである、一方、放射温度計は、熱電対のように、セ
ンサを被加熱物に接触させないため、前述した熱電対の
欠点が克服されている。このため、現在、温度測定は放
射温度計で行う方向に移行してきている。なお、放射温
度計では、通常５μ程度の波長領域の赤外線強度を測定
している。On the other hand, unlike thermocouples, radiation thermometers do not bring the sensor into contact with the object to be heated, so the above-mentioned drawbacks of thermocouples are overcome. For this reason, there is currently a shift toward temperature measurement using radiation thermometers. Note that the radiation thermometer usually measures infrared intensity in a wavelength range of about 5 μm.
このように、放射温度計では、前述した熱電対の欠点が
克服されている一方、次に述べるような欠点を有してい
る。In this way, although the radiation thermometer overcomes the drawbacks of the thermocouple described above, it also has the following drawbacks.
周知のように、放射温度計は、波長帯域を限定して測定
された物体の放射輝度が物体の温度と放射率とによって
決まる現象を利用したものであり、この放射率（物体表
面から放射される熱放射の輝度と、この物体と同一温度
にある黒体の表面から放射される熱放射の輝度との比）
は物体の材質のほか、表面の研摩状態や、表面に形成さ
れている酸化膜、ドーピングの状態などにより強く影響
され、物体自体の温度は同一でも測定された温度は表面
状態により大きく変動する。このため、赤外放射温度計
を用いた閉ループ制御により温度制御を行なっている装
置において、１００℃程度もの温度変動が見られる場合
がある。このため、比較的新しい装置では、加熱時間に
よる被加熱物表面状態の変化を予め測定しておき、加熱
時間により測定温度を補正するなどの機能を持つものも
現れてきている。しかし、酸化膜などの表面状態が幅を
もって時々刻々に変化するプロセスなどへの対応や、表
面処理の異なる工程中にあるウェーハあるいは異物質か
らなるウェーハなどに対応して高精度の温度制御を行う
ことは極めて困難である。As is well known, radiation thermometers utilize the phenomenon that the radiance of an object measured in a limited wavelength band is determined by the object's temperature and emissivity. (ratio of the brightness of thermal radiation emitted from the surface of a blackbody at the same temperature as this object)
In addition to the material of the object, it is strongly influenced by the polishing condition of the surface, the oxide film formed on the surface, the doping condition, etc., and even if the temperature of the object itself is the same, the measured temperature will vary greatly depending on the surface condition. For this reason, in a device that performs temperature control by closed-loop control using an infrared radiation thermometer, temperature fluctuations of about 100° C. may be observed. For this reason, some relatively new devices have a function of measuring in advance changes in the surface state of the heated object due to heating time and correcting the measured temperature based on the heating time. However, high-precision temperature control is required to handle processes in which the surface condition of oxide films etc. changes over time, or to handle wafers undergoing different surface treatment processes or wafers made of foreign materials. This is extremely difficult.
この発明の目的は、熱電対、放射温度針それぞれの欠点
が克服された。複雑化されない測温系を有する熱処理装
置を提供することである。The object of this invention is to overcome the respective disadvantages of thermocouples and radiation temperature needles. It is an object of the present invention to provide a heat treatment apparatus having a temperature measurement system that is not complicated.
上記課題を解決するために、この発明においては、被加
熱物表面の温度分布を測定しつつ該被加熱物表面の温度
制御を行う熱処理装置を、該被加熱物の温度測定を放射
温度計などの非接触式温度計により被加熱物表面の複数
個所について行うとともに該被測温個所中の少なくとも
１個所は熱電対のような接触式温度針により同時に測定
し、非接触式温度計の測温誤差を接触式温度針による測
温値を用いて補正しつつ非接触式温度計による温度制御
を行う構成とするものとする。In order to solve the above problems, the present invention provides a heat treatment apparatus that controls the temperature of the surface of the heated object while measuring the temperature distribution on the surface of the heated object, and a radiation thermometer that measures the temperature of the heated object. Temperature measurement is performed at multiple locations on the surface of the heated object using a non-contact thermometer, and at least one of the locations is simultaneously measured using a contact temperature needle such as a thermocouple. The configuration is such that temperature control is performed using a non-contact thermometer while correcting errors using temperature values measured using a contact temperature needle.
この発明は、熱電対、放射温度計それぞれに前述のよう
な欠点を有する一方、熱電対は被加熱体の表面状態に関
係な（被加熱体の温度を精度高く測定することができ、
放射温度計は非接触に測温可能なことから被加熱体の温
度分布に影響を与えることなく被加熱体表面の複数個所
の温度を測定することができるという、それぞれの長所
を巧みに組み合わせることにより、前述の欠点が除去さ
れた。高精度の温度制御が可能となる点に着目したもの
である０本発明は特に半導体装置の製造に用いられる加
熱装置を対象としており、この場合の被加熱体はサセプ
タに載置される。厚さの薄い半導体ウェーハであり、か
つこの半導体ウェーハはサセプタとともに加熱されるた
め、ウェーハ表面の温度と裏面の温度とは実質的に等し
く、従って、熱電対をサセプタを貫通して放射温度計に
よるいずれか１つの測温点のウェーハ表面側に接触させ
てこの接触点の温度を測定することにより、ウェーハの
温度分布を変化させることなくこの接触点の温度すなわ
ち放射温度計の測温点の温度を精度よく測定することが
できる。従うてこの温度により放射温度針による測温値
を補正するとともに、同一補正係数をほかの放射温度計
による測温値に乗することにより、ウェーハ全表面の温
度分布を精度高く求めることができるとともに、それぞ
れの放射温度計からの補正された温度を用いてウェーハ
表面の温度を高精度に制御することができる。Although thermocouples and radiation thermometers each have the above-mentioned drawbacks, thermocouples are not related to the surface condition of the heated object (the temperature of the heated object can be measured with high accuracy,
Since radiation thermometers can measure temperature without contact, they can measure the temperature at multiple locations on the surface of a heated object without affecting the temperature distribution of the heated object, which is a skillful combination of the advantages of each. The above-mentioned drawbacks have been eliminated. The present invention, which focuses on the point that highly accurate temperature control is possible, is particularly directed to a heating device used in the manufacture of semiconductor devices, and in this case, the object to be heated is placed on a susceptor. Since the semiconductor wafer is thin and is heated together with the susceptor, the temperature on the front side of the wafer is substantially equal to the temperature on the back side. By bringing any one temperature measurement point into contact with the wafer surface side and measuring the temperature of this contact point, the temperature of this contact point, that is, the temperature of the temperature measurement point of the radiation thermometer, can be measured without changing the temperature distribution of the wafer. can be measured with high precision. Therefore, by correcting the temperature value measured by the radiation temperature needle using the temperature of the lever, and by multiplying the temperature value measured by other radiation thermometers by the same correction coefficient, the temperature distribution on the entire wafer surface can be determined with high accuracy. , the temperature of the wafer surface can be controlled with high precision using the corrected temperatures from each radiation thermometer.
第１図に本発明の一実施例による熱処理装置本体の構成
を示す、第１図において、被加熱体であるシリコンウェ
ーハ （以下単にウェーハと記す）１はサセプタ２に載
置され、透明な石英チャンバ３内に配置されている０石
英チャンバ３内は、成膜原料ガスの供給と図示されない
真空排気系による排気とにより所定の圧力に保持されて
いる１石英チャンバ３の下方には、タングステンランプ
４と反射板５とからなる加熱体本体が配されており、サ
セプタ２ごとウェーハ１を加熱する。タングステンラン
プ４はウェーハ面の温度分布により、ランプ１本づつの
光量を制御することが可能となっている。FIG. 1 shows the configuration of a heat treatment apparatus main body according to an embodiment of the present invention. In FIG. 1, a silicon wafer (hereinafter simply referred to as a wafer) 1, which is an object to be heated, is placed on a susceptor 2, and a transparent quartz The interior of the quartz chamber 3 is maintained at a predetermined pressure by supplying film-forming raw material gas and exhaust by a vacuum exhaust system (not shown).1 A tungsten lamp is located below the quartz chamber 3. A heating body consisting of a susceptor 4 and a reflecting plate 5 is disposed, and heats the wafer 1 together with the susceptor 2. The light intensity of each tungsten lamp 4 can be controlled depending on the temperature distribution on the wafer surface.
また、石英チャンバ３の上方には、ウェーハｌの面積範
囲内に複数の放射温度針のセンサ６．８．９・・・が分
散配置され、一方、ウェーハ１が載置されたサセプタ２
の支柱を貫通して外部から熱電対７が挿入され、放射セ
ンサ６．８．９・・・のうちの１つ。Further, above the quartz chamber 3, a plurality of radiation temperature needle sensors 6,8,9... are distributed within the area of the wafer l, while a susceptor 2 on which the wafer 1 is placed
A thermocouple 7 is inserted from the outside through the support column of one of the radiation sensors 6.8.9....
ここでは６の測温点と対向するウェーハ裏面上の点に熱
電対の測温部を接触させて測温系が構成されている。Here, a temperature measuring system is constructed by bringing a temperature measuring part of a thermocouple into contact with a point on the back surface of the wafer opposite to the temperature measuring point 6.
このような熱処理装置の構成でサセプタ２ごと加熱され
たウェーハ１の表面温度は放射センサ６゜８．９・・・
により測定されるが、ウェーハ表面の放射率は表面状態
の変化により時々刻々変化するため、測定値はずれて行
（、一方、ウェーハ裏面に接触している熱電対の測温部
により、裏面の温度すなわちこの接触点と対向する表面
の温度が表面状態の変化に関係なく精度高く測定される
から、この熱電対による測温値と放射センサ６による測
温値とを比較し、この誤差率を補正率としてほかの放射
センサ８．９・・・による測温値に乗じて正しい温度を
導り、タングステンランプ４１本１本の光量制御は、補
正された放射センサによる測温値により行う。With such a heat treatment equipment configuration, the surface temperature of the wafer 1 heated together with the susceptor 2 is determined by the radiation sensor 6°8.9...
However, since the emissivity of the wafer surface changes from moment to moment due to changes in the surface condition, the measured value may deviate from time to time (on the other hand, the temperature measurement part of the thermocouple in contact with the back surface of the wafer may In other words, since the temperature of the surface facing this contact point is measured with high accuracy regardless of changes in the surface condition, the temperature value measured by this thermocouple and the temperature value measured by the radiation sensor 6 are compared and this error rate is corrected. The temperature values measured by the other radiation sensors 8, 9, .
以上に述べたように、本発明によれば、被加熱物表面の
温度分布を測定しつつ該被加熱物表面の温度制御を行う
熱処理装置を、該被加熱物の温度測定を放射温度計など
の非接触式温度計により被加熱物表面の複数個所につい
て行うとともに該被測温個所中の少な（とも１個所は熱
電対のような接触式温度計により同時に測定し、非接触
式温度針の測温誤差を接触式温度針による測温値を用い
て補正しつつ非接触式温度計による温度制御を行う構成
としたので、放射温度計の欠点であった。As described above, according to the present invention, the heat treatment apparatus that controls the temperature of the surface of the heated object while measuring the temperature distribution on the surface of the heated object can be used to measure the temperature of the heated object using a radiation thermometer or the like. The temperature is measured at multiple locations on the surface of the object to be heated using a non-contact thermometer, and at least one of the locations is simultaneously measured using a contact thermometer such as a thermocouple, and the non-contact temperature needle is This was a drawback of the radiation thermometer because the temperature measurement error was corrected using the temperature value measured by the contact temperature needle and the temperature was controlled by the non-contact thermometer.
被加熱物の温度と表面状態に依存する放射率とに基因す
る測定値の誤差を、表面状態と関係なく被加熱物の温度
を高精度に測定可能な熱電対による測定値によりリアル
タイムで修正することができるようになった。しかも、
この補正のための熱電対の測定は測定点１点のみの、あ
るいは温度分布に影響を与えない最少限の測定点の測定
ですむから、被加熱物の温度制御を、測温系をさほど複
雑化することなく高精度で行うことができる。Errors in measurement values due to the temperature of the heated object and emissivity that depends on the surface condition are corrected in real time using measurements made by thermocouples that can accurately measure the temperature of the heated object regardless of the surface condition. Now I can do it. Moreover,
Thermocouple measurements for this correction require measurements at only one measurement point, or at the minimum number of measurement points that do not affect the temperature distribution, so temperature control of the heated object and temperature measurement system are not complicated. This can be done with high precision without any distortion.
Ｌ図面の簡単な説明
第１図は本発明の一実施例による熱処理装置本体の構成
を示す断面図である。BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a sectional view showing the structure of a heat treatment apparatus main body according to an embodiment of the present invention.
１：ウェーハ （被加熱体） 、６．８．９ ：放射セ
ンサ （放射温度計）、７：熱電対。1: Wafer (heated object), 6.8.9: Radiation sensor (radiation thermometer), 7: Thermocouple.
数例で）＋７ ’ｉｆ 閉in some cases) +7 'if closed
Claims (1)
面の温度制御を行う熱処理装置において、該被加熱物の
温度測定を放射温度計などの非接触式温度計により被加
熱物表面の複数個所について行うとともに該被測温個所
中の少なくとも１個所は熱電対のような接触式温度計に
より同時に測定し、非接触式温度計の測温誤差を接触式
温度計による測温値を用いて補正しつつ非接触式温度計
による温度制御を行うことを特徴とする熱処理装置。1) In a heat treatment device that controls the temperature of the surface of the heated object while measuring the temperature distribution on the surface of the heated object, the temperature of the heated object is measured using a non-contact thermometer such as a radiation thermometer. At the same time, at least one of the temperature-measuring points is measured simultaneously with a contact thermometer such as a thermocouple, and the temperature measurement error of the non-contact thermometer is calculated by comparing the temperature measurement value with the contact thermometer. A heat treatment apparatus characterized in that temperature control is performed using a non-contact thermometer while correcting the temperature using a non-contact thermometer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12105489A JPH02298829A (en) | 1989-05-15 | 1989-05-15 | Heat treatment apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12105489A JPH02298829A (en) | 1989-05-15 | 1989-05-15 | Heat treatment apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02298829A true JPH02298829A (en) | 1990-12-11 |
Family
ID=14801697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12105489A Pending JPH02298829A (en) | 1989-05-15 | 1989-05-15 | Heat treatment apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02298829A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07147257A (en) * | 1993-09-30 | 1995-06-06 | Tokyo Electron Ltd | Heat treatment method and device therefor |
| JP2001257169A (en) * | 2000-02-01 | 2001-09-21 | Asm America Inc | Temperature control method of machining chamber, semiconductor machining device, and sensor calibration method |
| JP2004510338A (en) * | 2000-09-27 | 2004-04-02 | アクセリス テクノロジーズ インコーポレーテッド | System and method for controlling movement of a workpiece in a heat treatment system |
| JP2006147943A (en) * | 2004-11-22 | 2006-06-08 | Kokusai Electric Semiconductor Service Inc | Substrate processor and semiconductor device manufacturing method |
| JP2012238779A (en) * | 2011-05-13 | 2012-12-06 | Dainippon Screen Mfg Co Ltd | Heat treatment apparatus and heat treatment method |
| TWI679399B (en) * | 2018-10-23 | 2019-12-11 | 國立高雄科技大學 | On-chip curvature correction structure and method thereof |
| CN113899477A (en) * | 2021-12-07 | 2022-01-07 | 深圳市诺泰芯装备有限公司 | Testing temperature calibration jig and method |
-
1989
- 1989-05-15 JP JP12105489A patent/JPH02298829A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07147257A (en) * | 1993-09-30 | 1995-06-06 | Tokyo Electron Ltd | Heat treatment method and device therefor |
| JP2001257169A (en) * | 2000-02-01 | 2001-09-21 | Asm America Inc | Temperature control method of machining chamber, semiconductor machining device, and sensor calibration method |
| JP2004510338A (en) * | 2000-09-27 | 2004-04-02 | アクセリス テクノロジーズ インコーポレーテッド | System and method for controlling movement of a workpiece in a heat treatment system |
| JP2006147943A (en) * | 2004-11-22 | 2006-06-08 | Kokusai Electric Semiconductor Service Inc | Substrate processor and semiconductor device manufacturing method |
| JP2012238779A (en) * | 2011-05-13 | 2012-12-06 | Dainippon Screen Mfg Co Ltd | Heat treatment apparatus and heat treatment method |
| TWI679399B (en) * | 2018-10-23 | 2019-12-11 | 國立高雄科技大學 | On-chip curvature correction structure and method thereof |
| CN113899477A (en) * | 2021-12-07 | 2022-01-07 | 深圳市诺泰芯装备有限公司 | Testing temperature calibration jig and method |
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