JPH04247622A - Method and apparatus for etching semiconductor substrate - Google Patents
Method and apparatus for etching semiconductor substrateInfo
- Publication number
- JPH04247622A JPH04247622A JP1316291A JP1316291A JPH04247622A JP H04247622 A JPH04247622 A JP H04247622A JP 1316291 A JP1316291 A JP 1316291A JP 1316291 A JP1316291 A JP 1316291A JP H04247622 A JPH04247622 A JP H04247622A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- semiconductor substrate
- etching solution
- spouting
- rail
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims description 24
- 239000007788 liquid Substances 0.000 claims abstract description 26
- 238000005507 spraying Methods 0.000 abstract description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Weting (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は半導体基板のエッチング
方法および装置に関し、特に多数の半導体基板をウェッ
トエッチング処理する半導体基板のエッチング方法およ
び装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor substrate etching method and apparatus, and more particularly to a semiconductor substrate etching method and apparatus for wet etching a large number of semiconductor substrates.
【０００２】0002
【従来の技術】従来の半導体基板のエッチング方法とし
ては、エッチング溶液中に半導体基板を浸すだけの浸漬
式と呼ばれる方法が、構造が簡単で多数の半導体基板を
処理出来るため広く用いられている。また、エッチング
速度を一定に保つために、エッチング溶液が流れている
中に半導体基板を浸してエッチングを行う流水式と呼ば
れる方法や、真空チャック等で保持された半導体基板上
からエッチング溶液を散布するスプレー式、あるいは真
空チャックで保持された半導体基板をエッチング溶液中
で回転させ、かつ攪拌する方法（特開平１−３００５２
６公報）等がある。2. Description of the Related Art As a conventional method for etching semiconductor substrates, a method called the immersion method, in which the semiconductor substrate is simply immersed in an etching solution, is widely used because it has a simple structure and can process a large number of semiconductor substrates. In addition, in order to keep the etching rate constant, there is a method called the flush method, in which the semiconductor substrate is immersed in a flowing etching solution, or a method called the flushing method, in which the etching solution is sprayed onto the semiconductor substrate held by a vacuum chuck, etc. A spray method or a method in which a semiconductor substrate held by a vacuum chuck is rotated and stirred in an etching solution (Japanese Patent Application Laid-Open No. 1-30052)
6 Publications) etc.
【０００３】0003
【発明が解決しようとする課題】上述した従来の浸漬式
では、多数の半導体基板を同時に処理できるが、エッチ
ングに伴う気泡の発生による局部的なエッチング残りや
、エッチング溶液の疲労によりエッチング速度が低下す
るという問題点がある。また、流水式では、エッチング
溶液の流れの方向によってレジスト膜の壁で影となった
部分でのエッチング残りが生じやすく、更にスプレー式
あるいは特開平１−３００５２６公報記載の方法では、
半導体基板を真空チャック等で保持するために多数の半
導体基板を同時に処理することが難しいという問題点が
ある。[Problems to be Solved by the Invention] The above-mentioned conventional immersion method can process a large number of semiconductor substrates at the same time, but the etching speed decreases due to local etching residue due to the generation of bubbles during etching and fatigue of the etching solution. There is a problem with that. In addition, in the flowing water method, etching remains are likely to occur in areas shadowed by the walls of the resist film depending on the direction of the flow of the etching solution, and furthermore, in the spray method or the method described in JP-A-1-300526,
There is a problem in that it is difficult to process a large number of semiconductor substrates at the same time because the semiconductor substrates are held by a vacuum chuck or the like.
【０００４】本発明の目的は、多数の半導体基板をエッ
チング残り等が生じることなく均一にエッチングできる
半導体基板のエッチング方法および装置を提供すること
にある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor substrate etching method and apparatus that can uniformly etch a large number of semiconductor substrates without leaving etching residues.
【０００５】[0005]
【課題を解決するための手段】本発明の半導体基板のエ
ッチング方法は、長手方向に複数の***を有してエッチ
ング溶液を噴出する棒状の液噴出部を設け、等間隔に配
置された複数の半導体基板のエッチング面に沿って複数
の前記液噴出部をエッチング溶液を噴出させながら往復
移動させてエッチングを行う方法である。[Means for Solving the Problems] The method of etching a semiconductor substrate of the present invention includes a rod-shaped liquid spouting section having a plurality of small holes in the longitudinal direction and spouting an etching solution, and a plurality of holes arranged at equal intervals. This method performs etching by moving the plurality of liquid ejecting parts back and forth along the etching surface of the semiconductor substrate while ejecting the etching solution.
【０００６】本発明の半導体基板のエッチング装置は、
長手方向に複数の***を有してエッチング溶液を噴出す
る棒状の液噴出部と、この液噴出部を等間隔に複数保持
すると共に複数の前記液噴出部にエッチング溶液を供給
する分配部と、この分配部を上下左右に移動させる移動
機構とを備えて構成されている。The semiconductor substrate etching apparatus of the present invention includes:
a rod-shaped liquid spouting part having a plurality of small holes in the longitudinal direction and spouting an etching solution; a distribution part holding a plurality of the liquid spouting parts at equal intervals and supplying the etching solution to the plurality of liquid spouting parts; It is configured to include a moving mechanism that moves this distribution section vertically and horizontally.
【０００７】[0007]
【実施例】次に、本発明について図面を参照して説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings.
【０００８】図１は本発明の一実施例を示す図であり、
（ａ）は正面図、（ｂ）は（ａ）に示したＡ−Ａ′線の
断面図である。エッチング溶液１の中には、基板キャリ
ア３に等間隔で配置された複数の半導体基板２が浸され
ている。各半導体基板間には、半導体基板２のエッチン
グ面６に対向して複数の***５を有しテフロン等のエッ
チング溶液に安定な材質で作られた棒状の液噴出部４が
上方から入れられている。各液噴出部４へは、溶液タン
ク７からポンプ１０等で吸い上げられたエッチング溶液
が加圧されて分配部１１を介して供給される。各液噴出
部４は分配部１１を介して移動機構８に固定されており
、半導体基板のエッチング面６に平行なレール９上を往
復移動を行ないながらエッチング溶液を噴出する。従っ
て、エッチング溶液が複数の半導体基板のエッチング面
６に均一に当たり、均一にエッチングが行われる。なお
、液噴出部４の断面形状は丸形，角形いずれであっても
よい。FIG. 1 is a diagram showing an embodiment of the present invention.
(a) is a front view, and (b) is a sectional view taken along the line A-A' shown in (a). Immersed in the etching solution 1 are a plurality of semiconductor substrates 2 arranged at equal intervals on a substrate carrier 3 . Between each semiconductor substrate, a rod-shaped liquid spouting part 4 having a plurality of small holes 5 facing the etched surface 6 of the semiconductor substrate 2 and made of a material stable to etching solutions such as Teflon is inserted from above. There is. Etching solution sucked up from the solution tank 7 by a pump 10 or the like is pressurized and supplied to each liquid spouting section 4 via a distribution section 11 . Each liquid ejecting section 4 is fixed to a moving mechanism 8 via a distribution section 11, and ejects the etching solution while reciprocating on a rail 9 parallel to the etching surface 6 of the semiconductor substrate. Therefore, the etching solution uniformly hits the etching surfaces 6 of the plurality of semiconductor substrates, and etching is performed uniformly. Note that the cross-sectional shape of the liquid ejecting portion 4 may be either round or square.
【０００９】図２は本発明の一実施例のエッチング装置
を示す斜視図である。エッチング槽２１には、フッ酸（
ＨＦ）等のエッチング溶液が満たされる。複数の液噴出
部２２は、等間隔に配置された各半導体基板間に挿入出
来るように位置決めされている。上下方向に移動する支
持棒２８には、水平方向にレール２７が取付けられ、更
にレール２７上には、モータ等でレール２７に沿って往
復動作する移動機構２５が取付けられている。移動機構
２５には、分配部２４が取付けられており、ホース２６
および分配部２４を介してポンプ等で加圧されたエッチ
ング溶液が複数の液噴出部２２へ均等に供給される。FIG. 2 is a perspective view showing an etching apparatus according to an embodiment of the present invention. The etching tank 21 contains hydrofluoric acid (
It is filled with an etching solution such as HF). The plurality of liquid ejecting parts 22 are positioned so that they can be inserted between the semiconductor substrates arranged at equal intervals. A rail 27 is attached in the horizontal direction to the support rod 28 that moves in the vertical direction, and a moving mechanism 25 that reciprocates along the rail 27 by a motor or the like is attached on the rail 27. A distribution section 24 is attached to the moving mechanism 25, and a hose 26
The etching solution pressurized by a pump or the like is evenly supplied to the plurality of liquid jetting parts 22 via the distribution part 24 .
【００１０】エッチング処理を行うときは、液噴出部２
２の下端が半導体基板の下端にくるまで降下する。ホー
ス２６を通して送られてきたエッチング溶液は、分配部
２４で複数の液噴出部２２に分配されて***２３から半
導体基板のエッチング面へ噴出される。液噴出部２２は
、エッチング液を噴出しつつ移動機構２５によってレー
ル２７に沿って移動し、半導体基板の左右両端の間を往
復動作する。When performing the etching process, the liquid spouting section 2
2 until the lower end of the semiconductor substrate reaches the lower end of the semiconductor substrate. The etching solution sent through the hose 26 is distributed to the plurality of liquid jetting parts 22 by the distribution part 24 and jetted from the small hole 23 onto the etching surface of the semiconductor substrate. The liquid ejecting part 22 moves along the rail 27 by the moving mechanism 25 while ejecting etching liquid, and reciprocates between the left and right ends of the semiconductor substrate.
【００１１】所定のエッチング処理が終了するとエッチ
ング溶液の噴出および往復動作を停止し、支持棒２８が
上方に移動してエッチング処理された半導体基板が取り
出せるように動作する。When a predetermined etching process is completed, the spouting of the etching solution and the reciprocating operation are stopped, and the support rod 28 moves upward to take out the etched semiconductor substrate.
【００１２】0012
【発明の効果】以上説明したように本発明は、等間隔に
配置された半導体基板間を複数の***からエッチング溶
液を噴出しながら半導体基板のエッチング面に沿って往
復移動する液噴出部を設けることにより、半導体基板の
エッチング面に対し、ほぼ正面から新しいエッチング溶
液を噴出して均一なエッチングを行うことができ、レジ
スト膜の影やエッチング時に発生する気泡によるエッチ
ング残りが低減する。また、液噴出部の数を増やすこと
により、多数の半導体基板を同時に処理できる。Effects of the Invention As described above, the present invention provides a liquid jetting section that moves back and forth along the etched surface of the semiconductor substrate while spouting the etching solution from a plurality of small holes between the semiconductor substrates arranged at equal intervals. As a result, uniform etching can be performed by spraying new etching solution almost from the front of the etched surface of the semiconductor substrate, and etching residue due to the shadow of the resist film and air bubbles generated during etching is reduced. Furthermore, by increasing the number of liquid ejecting parts, a large number of semiconductor substrates can be processed simultaneously.
【図１】本発明の一実施例を示す図であり、（ａ）は正
面図、（ｂ）は（ａ）に示したＡ−Ａ′線の断面図であ
る。FIG. 1 is a diagram showing an embodiment of the present invention, in which (a) is a front view and (b) is a cross-sectional view taken along the line AA' shown in (a).
【図２】本発明の半導体基板のエッチング装置の一実施
例を示す斜視図である。FIG. 2 is a perspective view showing an embodiment of the semiconductor substrate etching apparatus of the present invention.
２ 半導体基板 ４，２２ 液噴出部 ５，２３ *** ８，２５ 移動機構 １１，２４ 分配部 2 Semiconductor substrate 4,22 Liquid spouting part 5, 23 Small hole 8,25 Moving mechanism 11, 24 Distribution section
Claims (2)
ング溶液を噴出する棒状の液噴出部を設け、等間隔に配
置された複数の半導体基板のエッチング面に沿って複数
の前記液噴出部をエッチング溶液を噴出させながら往復
移動させてエッチングを行うことを特徴とする半導体基
板のエッチング方法。1. A rod-shaped liquid spouting section having a plurality of small holes in the longitudinal direction and spouting an etching solution is provided, and a plurality of the liquid spouting sections are arranged along the etching surface of a plurality of semiconductor substrates arranged at equal intervals. A method for etching a semiconductor substrate, characterized in that etching is performed by moving the substrate back and forth while spouting an etching solution.
ング溶液を噴出する棒状の液噴出部と、この液噴出部を
等間隔に複数保持すると共に複数の前記液噴出部にエッ
チング溶液を供給する分配部と、この分配部を上下左右
に移動させる移動機構とを備えたことを特徴とする半導
体基板のエッチング装置。2. A rod-shaped liquid spouting part having a plurality of small holes in the longitudinal direction and spouting an etching solution, a plurality of the liquid spouting parts being held at equal intervals, and etching solution being supplied to the plurality of liquid spouting parts. What is claimed is: 1. A semiconductor substrate etching apparatus comprising: a distributing section for moving the distributing section; and a moving mechanism for moving the distributing section vertically and horizontally.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1316291A JPH04247622A (en) | 1991-02-04 | 1991-02-04 | Method and apparatus for etching semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1316291A JPH04247622A (en) | 1991-02-04 | 1991-02-04 | Method and apparatus for etching semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04247622A true JPH04247622A (en) | 1992-09-03 |
Family
ID=11825479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1316291A Pending JPH04247622A (en) | 1991-02-04 | 1991-02-04 | Method and apparatus for etching semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04247622A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006347068A (en) * | 2005-06-17 | 2006-12-28 | Alps Electric Co Ltd | Apparatus and method of graze etching |
| JP2012044083A (en) * | 2010-08-23 | 2012-03-01 | Mitsubishi Electric Corp | Wet etching device |
-
1991
- 1991-02-04 JP JP1316291A patent/JPH04247622A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006347068A (en) * | 2005-06-17 | 2006-12-28 | Alps Electric Co Ltd | Apparatus and method of graze etching |
| JP4546882B2 (en) * | 2005-06-17 | 2010-09-22 | アルプス電気株式会社 | Glaze etching apparatus and glaze etching method |
| JP2012044083A (en) * | 2010-08-23 | 2012-03-01 | Mitsubishi Electric Corp | Wet etching device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI467642B (en) | Megasonic precision cleaning of semiconductor process equipment components and parts | |
| US9343339B2 (en) | Coating method and coating apparatus | |
| JPH05291228A (en) | Apparatus and method for cleaning of wafer | |
| US20080011322A1 (en) | Cleaning systems and methods | |
| TW200916210A (en) | Two-fluid jet nozzle for cleaning substrate | |
| JP2007165554A (en) | Substrate processor and substrate processing method | |
| JP2008311657A (en) | Substrate etching apparatus, and method of treating substrate | |
| JPH04247622A (en) | Method and apparatus for etching semiconductor substrate | |
| WO2011101936A1 (en) | Etching method and etching device | |
| JPWO2022210507A5 (en) | ||
| JPS634636B2 (en) | ||
| KR101150022B1 (en) | Apparatus for etching | |
| US7396416B2 (en) | Substrate cleaning device | |
| JP2000064088A (en) | Plating device of printed circuit board | |
| JP4183122B2 (en) | Development processing method and development processing apparatus | |
| JPS62119543A (en) | Apparatus for producing semiconductor | |
| JP5639860B2 (en) | Wafer cleaning method | |
| JP2680933B2 (en) | Silicon wafer cleaning method and cleaning apparatus therefor | |
| KR102424625B1 (en) | Substrate rinsing systems and methods | |
| JPH0195521A (en) | Cleaning and its equipment | |
| JPH06208098A (en) | Substrate washing device | |
| US20030106567A1 (en) | Semiconductor substrate cleaning apparatus, method of cleaning semiconductor substrate and method of manufacturing semiconductor device | |
| JPH05129266A (en) | Method and equipment for cleaning | |
| JP2861900B2 (en) | Semiconductor cleaning equipment | |
| KR20080026341A (en) | Slit coater |