JPH04246827A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH04246827A JPH04246827A JP1204991A JP1204991A JPH04246827A JP H04246827 A JPH04246827 A JP H04246827A JP 1204991 A JP1204991 A JP 1204991A JP 1204991 A JP1204991 A JP 1204991A JP H04246827 A JPH04246827 A JP H04246827A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- hydrogen peroxide
- solution
- chemical solution
- pure water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000004140 cleaning Methods 0.000 claims abstract description 74
- 239000000126 substance Substances 0.000 claims abstract description 73
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 63
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 33
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000002156 mixing Methods 0.000 claims description 18
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 14
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 8
- 230000007423 decrease Effects 0.000 abstract description 3
- 238000012423 maintenance Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 67
- 239000000243 solution Substances 0.000 description 66
- 239000007788 liquid Substances 0.000 description 20
- 239000002253 acid Substances 0.000 description 7
- 238000011282 treatment Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910003556 H2 SO4 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- -1 etc. will evaporate Chemical compound 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、ウエハープロセスにお
ける洗浄（前工程）工程を有する半導体装置の製造方法
に関し、特に半導体基板（以下に「ウエハー」と称す）
を薬液と過酸化水素水または純水とを混合して洗浄する
半導体装置の製造方法に関するものである。[Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device having a cleaning (pre-process) step in a wafer process, and particularly to a semiconductor substrate (hereinafter referred to as a "wafer").
The present invention relates to a method of manufacturing a semiconductor device in which a chemical solution is mixed with a hydrogen peroxide solution or pure water for cleaning.
【０００２】0002
【従来の技術】従来、半導体装置の製造において、ウエ
ハープロセスにおける洗浄（前処理）工程は、各種の前
処理において例えば純水洗浄、酸洗浄、アルカリ洗浄、
有機洗浄、界面活性剤による洗浄、ドライ洗浄、乾燥な
どの基本洗浄が行われている。例えば酸洗浄またはアル
カリ洗浄等では、薬液、例えば硫酸、水酸化アンモニウ
ム、または塩酸などの溶液と過酸化水素水とを混合した
洗浄液を洗浄液槽に入れ、ヒータで加熱し、その洗浄液
槽へウエハーを入れたカセットをカセットごと入れて行
われている。Conventionally, in the manufacture of semiconductor devices, the cleaning (pretreatment) step in the wafer process includes various pretreatments such as pure water cleaning, acid cleaning, alkaline cleaning, etc.
Basic cleaning methods include organic cleaning, surfactant cleaning, dry cleaning, and drying. For example, in acid cleaning or alkaline cleaning, a cleaning solution made by mixing a chemical solution such as sulfuric acid, ammonium hydroxide, or hydrochloric acid with hydrogen peroxide is placed in a cleaning solution tank, heated with a heater, and the wafer is placed in the cleaning solution tank. This is done by inserting the cassette with the cassette.
【０００３】0003
【発明が解決しようとする課題】しかし、このような酸
またはアルカリ溶液と過酸化水素水とを混合した洗浄液
を加温した中へウエハーをカセットごと入れて洗浄する
方法では、洗浄液を高温にしなければ十分な洗浄効果を
得ることができず、多量の清浄液を高温に維持するには
、ヒータ等の加温装置にかかる負担がおおきい。例えば
、石英管の中にヒータ線を入れるような一般的なヒータ
では、高温にするほど石英管とヒータ線とが接触するよ
うな箇所で非常に破損し易くなり、そのためメンテナン
スに手間がかかるという不都合がある。[Problems to be Solved by the Invention] However, in this method of cleaning by placing the wafer together with the cassette into a heated cleaning solution that is a mixture of an acid or alkaline solution and a hydrogen peroxide solution, the cleaning solution must be heated to a high temperature. Otherwise, a sufficient cleaning effect cannot be obtained, and maintaining a large amount of cleaning liquid at a high temperature places a heavy burden on a heating device such as a heater. For example, in a typical heater in which a heating wire is placed inside a quartz tube, the higher the temperature, the more likely it is to break at the point where the quartz tube and heater wire come into contact, which requires maintenance. It's inconvenient.
【０００４】また洗浄液を高温に保っておくと、揮発し
やすい薬液、例えばＨＣｌ，ＮＨ３ 等が蒸発し、また
過酸化水素水から酸素が発生し、洗浄液の洗浄能力は洗
浄を行わなくても経時的に低下する。この傾向は、当然
に洗浄液の温度が高くなるほど顕著になる。これを解決
するため、常に薬液を補給しようとすると、薬液の使用
量は必要以上に多くなる。Furthermore, if the cleaning solution is kept at a high temperature, easily volatile chemicals such as HCl, NH3, etc. will evaporate, and oxygen will be generated from the hydrogen peroxide solution, and the cleaning ability of the cleaning solution will decrease over time even without cleaning. decreases. Naturally, this tendency becomes more pronounced as the temperature of the cleaning liquid increases. If an attempt is made to constantly replenish the chemical solution to solve this problem, the amount of the chemical solution used will be larger than necessary.
【０００５】本発明の目的は、上記問題点を解消し、ヒ
ータ等の加温装置などで薬液を混合した洗浄液の温度を
高温に維持するための装置負荷を軽減し、また洗浄液の
洗浄能力の経時的な低下を改善し、多量の薬液を使用す
ることのないウエハープロセスの洗浄工程を有する半導
体装置の製造方法を提供することにある。An object of the present invention is to solve the above-mentioned problems, to reduce the load on equipment for maintaining the temperature of a cleaning liquid mixed with a chemical solution at a high temperature using a heating device such as a heater, and to improve the cleaning ability of the cleaning liquid. It is an object of the present invention to provide a method for manufacturing a semiconductor device having a cleaning step in a wafer process that improves deterioration over time and does not use a large amount of chemicals.
【０００６】[0006]
【課題を解決するための手段】本発明は、上記課題を解
決するため、本発明の第１の態様において、ウエハーを
薬液と過酸化水素水または純水とを混合して洗浄するに
あたり、ウエハー上の洗浄する部分上で薬液と過酸化水
素水または純水とを直接混合して洗浄を行うことを特徴
とする半導体装置の製造方法を提供する。[Means for Solving the Problems] In order to solve the above-mentioned problems, the present invention provides a first aspect of the present invention in which a wafer is cleaned by mixing a chemical solution with hydrogen peroxide solution or pure water. Provided is a method for manufacturing a semiconductor device, characterized in that cleaning is performed by directly mixing a chemical solution with a hydrogen peroxide solution or pure water on a portion to be cleaned.
【０００７】好ましくは、薬液が硫酸、水酸化アンモニ
ウム、または塩酸であるのがよい。Preferably, the chemical solution is sulfuric acid, ammonium hydroxide, or hydrochloric acid.
【０００８】また、本発明の第２の態様において、ウエ
ハーを薬液と過酸化水素水または純水とを混合して洗浄
するにあたり、ウエハーを受け皿上に載置し、その上か
ら薬液を流下するノズルと、過酸化水素水または純水を
流下するノズルとが配置され、それぞれ１個あるいは複
数個のノズルから別々に薬液または過酸化水素水を流下
してウエハー上で反応を行わせることを特徴とする半導
体装置の製造方法を提供する。[0008] In a second aspect of the present invention, when cleaning a wafer by mixing a chemical solution with a hydrogen peroxide solution or pure water, the wafer is placed on a receiving tray, and the chemical solution is allowed to flow down from above. A nozzle and a nozzle through which hydrogen peroxide solution or pure water flows are arranged, and the chemical solution or hydrogen peroxide solution is separately flowed down from one or more nozzles to cause a reaction to occur on the wafer. A method for manufacturing a semiconductor device is provided.
【０００９】さらにまた、本発明の第３の態様において
、ウエハーを薬液と過酸化水素水または純水とを混合し
て洗浄するにあたり、保持具に収納されたウエハーを薬
液槽と過酸化水素水または純水の槽とに交互に浸漬する
ことを特徴とする半導体装置の製造方法を提供する。Furthermore, in the third aspect of the present invention, when cleaning the wafer by mixing a chemical solution with a hydrogen peroxide solution or pure water, the wafer housed in the holder is mixed with a chemical solution tank and a hydrogen peroxide solution. Alternatively, there is provided a method for manufacturing a semiconductor device characterized by alternately immersing the semiconductor device in a tank of pure water.
【００１０】本発明の第４の態様において、ウエハーを
薬液と過酸化水素水または純水とを混合して洗浄するに
あたり、保持具に収納されたウエハーの上方に複数のシ
ャワーノズルを配置し、これら複数のシャワーノズルか
ら薬液と過酸化水素水または純水とがウエハーへ向けて
別々に噴出されるようにしたことを特徴とする半導体装
置の製造方法を提供する。In a fourth aspect of the present invention, when cleaning the wafer by mixing a chemical solution with hydrogen peroxide solution or pure water, a plurality of shower nozzles are arranged above the wafer housed in the holder, The present invention provides a method for manufacturing a semiconductor device, characterized in that a chemical solution and hydrogen peroxide solution or pure water are separately jetted toward a wafer from the plurality of shower nozzles.
【００１１】[0011]
【作用】本発明の半導体装置の製造方法によれば、洗浄
を行おうとするウエハーの部分上に、酸またはアルカリ
等の薬液と、純水または過酸化水素水とを直接混合し、
その化学的反応の際の反応熱により薬液を含む混合洗浄
液を加温し、その加温された混合洗浄液によりウエハー
の洗浄を行おうとする部分を洗浄する。この場合に薬液
と、純水または過酸化水素水との直接混合から発生する
反応熱のため、混合洗浄液は瞬間的に大きな洗浄力が得
られる。[Operation] According to the method of manufacturing a semiconductor device of the present invention, a chemical solution such as acid or alkali and pure water or hydrogen peroxide solution are directly mixed on the part of the wafer to be cleaned.
The mixed cleaning liquid containing the chemical solution is heated by the heat of reaction during the chemical reaction, and the area of the wafer to be cleaned is cleaned with the heated mixed cleaning liquid. In this case, due to the reaction heat generated from direct mixing of the chemical solution and pure water or hydrogen peroxide solution, the mixed cleaning solution can instantly obtain a large cleaning power.
【００１２】この発明による効果は、薬液と過酸化水素
水とを混ぜて洗浄液とした直後にウエハーを浸漬するよ
うにしても同様な効果は得られない。[0012] The same effect of the present invention cannot be obtained even if the wafer is immersed immediately after mixing a chemical solution and a hydrogen peroxide solution to form a cleaning solution.
【００１３】ウエハー上の洗浄を行う部分で薬液と純水
または過酸化水素水とを直接混合する方法としては、ま
ず、高濃度の薬液がウエハー表面を覆うようにする。次
いで、過酸化水素水または純水をウエハー表面に注いで
反応を行わせる。また薬液と過酸化水素水または純水と
を混ぜる順序は前述したものと逆になってもよし、また
同時でもよい。[0013] In a method of directly mixing a chemical solution with pure water or hydrogen peroxide at a portion of the wafer to be cleaned, first, a highly concentrated chemical solution is applied to cover the wafer surface. Next, hydrogen peroxide solution or pure water is poured onto the wafer surface to cause a reaction. Further, the order in which the chemical solution and hydrogen peroxide solution or pure water are mixed may be reversed to that described above, or may be mixed simultaneously.
【００１４】この方法として、（ａ）薬液槽につける、
（ｂ）浸す、（ｃ）シャワーのようにしてかける等が考
えられるが、その他の方法でも構わない。[0014] This method includes (a) placing it in a chemical bath;
(b) soaking, (c) showering, etc., but other methods are also possible.
【００１５】薬液としては、例えばＨ２ ＳＯ４ ，Ｈ
Ｃｌ等の酸や、ＮＨ４ ＯＨ等のアルカリをベースとし
た溶液が挙げられるが、この他にも過酸化水素水または
純水と反応して、十分な反応熱が得られる薬液ならなん
でもよい。過酸化水素水は、濃度は特に限定はなく、ま
た純水は比抵抗が１８ＭΩ・ｃｍ以上のものとする。[0015] As the chemical solution, for example, H2 SO4, H
Examples include solutions based on acids such as Cl and alkalis such as NH4 OH, but any other chemical solution may be used as long as it reacts with hydrogen peroxide or pure water to obtain sufficient reaction heat. The concentration of the hydrogen peroxide solution is not particularly limited, and the pure water has a specific resistance of 18 MΩ·cm or more.
【００１６】この混合による反応熱による効果が維持さ
れる時間は、約１０秒程度である。これを超える時間で
は、反応が終了し、従来の方法と変わらなくなるからで
ある。また、処理の際に、薬液および過酸化水素水また
は純水の温度は、高いに越したことはないが、上記効果
を奏するには室温でも十分である。[0016] The time during which the effect of reaction heat caused by this mixing is maintained is about 10 seconds. This is because if the time exceeds this, the reaction will be completed and the method will be no different from the conventional method. Further, during the treatment, it is better to keep the temperature of the chemical solution and hydrogen peroxide solution or pure water high, but room temperature is sufficient to produce the above effects.
【００１７】本発明を適用できるウエハープロセスの洗
浄工程としては、半導体装置の製造工程の前工程であり
、酸化の酸化前処理や、不純物拡散のための高温処理の
前処理や、アッシング後またはエッチング後の残渣の剥
離等が挙げられる。The cleaning process of the wafer process to which the present invention can be applied is a pre-process of the manufacturing process of semiconductor devices, such as pre-oxidation treatment, pre-treatment of high-temperature treatment for impurity diffusion, and post-ashing or etching. Examples include peeling off the residue afterwards.
【００１８】この方法は、簡便で効果が比較的高いもの
であるため、他の種々の酸またはアルカリ処理に適用で
きるものである。Since this method is simple and relatively effective, it can be applied to various other acid or alkali treatments.
【００１９】[0019]
【実施例】以下に本発明の半導体装置の製造方法を実施
する場合について具体的に説明する。Embodiments A case in which the method of manufacturing a semiconductor device according to the present invention is carried out will be explained in detail below.
【００２０】１４０℃でベイクしたフォトレジストを硫
酸と過酸化水素水とで剥離しようとする場合において、
常温でフォトレジストが形成されたウエハー表面に硫酸
を流下し、さらに過酸化水素水を加え、約１０秒程度の
時間反応させ、その後純粋にてオーバーフローリンスを
行った。この後、ウエハー表面を検査したところ、フォ
トレジストの残渣もなく清浄な表面が得られた。[0020] When trying to remove photoresist baked at 140°C with sulfuric acid and hydrogen peroxide solution,
Sulfuric acid was poured onto the wafer surface on which a photoresist was formed at room temperature, hydrogen peroxide solution was added, and the mixture was allowed to react for about 10 seconds, followed by overflow rinsing with pure water. After this, when the wafer surface was inspected, a clean surface was obtained with no photoresist residue.
【００２１】比較のため、同様のフォトレジストが形成
されたウエハーを硫酸と過酸化水素水との混合洗浄液に
浸漬し、まず常温で剥離を行ったところ、どのように薬
液の濃度を変えようと、数時間かかった。さらに、実用
的なスループット３０分以下で剥離が完了するためには
、液温を１００℃以上にまで温める必要がある。For comparison, a wafer on which a similar photoresist was formed was immersed in a mixed cleaning solution of sulfuric acid and hydrogen peroxide, and then peeled off at room temperature. , it took several hours. Furthermore, in order to complete the separation in 30 minutes or less at a practical throughput, it is necessary to warm the liquid temperature to 100° C. or higher.
【００２２】また、硫酸と過酸化水素水とを容器中で混
合した場合にもその希釈熱により急激な温度上昇がみら
れ、その洗浄能力は向上する。しかし、混合を行う容器
等の熱容量により本発明による混合に較べ、温度上昇勾
配は緩和され、最高到達温度は低くなる。薬液の混合比
が同じ場合、洗浄能力は温度で決まるため、容器で混ぜ
ただけのヒータによる加熱のない溶液ではいかにしても
本発明と同じ洗浄効果を得ることはできない。[0022] Also, when sulfuric acid and hydrogen peroxide are mixed in a container, a rapid temperature rise is observed due to the heat of dilution, and the cleaning ability is improved. However, due to the heat capacity of the mixing container, etc., the temperature increase gradient is relaxed compared to the mixing according to the present invention, and the maximum temperature reached is lower. When the mixing ratio of the chemical solutions is the same, the cleaning ability is determined by the temperature, so a solution that is simply mixed in a container without being heated by a heater cannot achieve the same cleaning effect as the present invention.
【００２３】以下に具体的な装置の構成について概略す
る。
（実施例１）ウエハーを枚葉式で洗浄する場合の装置構
成については、軸回転され得る受け皿の上に、ウエハー
を載置し、そのウエハー上から、薬液を流下するノズル
と、過酸化水素水を流下するノズルとが配置され、例え
ば２個のノズルから交互または別々に薬液または過酸化
水素水を流下してウエハー上で反応を行わせる。これら
ノズルの位置は、必ずしもウエハーの真上でなくてもよ
く、斜めまたは真横に配置されたノズルからウエハー表
面に向けて液を噴出するように配置してもよい。また受
け皿を回転させながら、ノズルから液を流下または噴出
すれば、液がウエハー表面で十分に広がりウエハー表面
で均一な反応を起こさせることができる。The specific configuration of the device will be outlined below. (Example 1) Regarding the equipment configuration for single-wafer cleaning of wafers, the wafer is placed on a tray that can be rotated on an axis, and a nozzle that flows down a chemical solution from above the wafer and a hydrogen peroxide For example, a chemical solution or hydrogen peroxide solution is caused to flow down alternately or separately from two nozzles to cause a reaction to occur on the wafer. The positions of these nozzles do not necessarily have to be directly above the wafer, and may be arranged so that the liquid is ejected toward the wafer surface from nozzles arranged diagonally or directly beside the wafer. Furthermore, by rotating the saucer and letting the liquid flow down or jet out from the nozzle, the liquid can spread sufficiently on the wafer surface to cause a uniform reaction on the wafer surface.
【００２４】具体的には図１の概略図に示すような構成
することが挙げられる。この図において要部した示さな
いが、ウエハーを複数枚のせることができ、回転するこ
とができる受け皿１１と、この受け皿１１上に受け皿１
１に載せられた所定のウエハー１３に薬液と過酸化水素
水（または純水）とを交互に流下する一対のノズル１５
から構成される。ウエハー１３を載置する受け皿１１は
、一対のノズル１５の直下に各ウエハー１３が配置され
るように回転制御され、また受け皿１１の周囲は流下さ
れた薬液および過酸化水素水（または純水）を溜めるこ
とができるように、湾曲した縁部１７が設けられている
。また、ウエハー１３の裏面側は小さな突起物にて数点
にて支持されるようにしてウエハー１３の裏面側にも洗
浄が施されるようにしてもよい。本発明では、複数処理
のバッチ式としたが、枚葉式としてもよい。また、薬液
と過酸化水素水（または純水）とを別々に流下するノズ
ルは、一対ずつの他に、複数のノズルを用意しもよく、
それぞれの状況に応じて所定のノズルから薬液または過
酸化水素水（または純水）を流下させることもできる。Specifically, a configuration as shown in the schematic diagram of FIG. 1 can be mentioned. Although the main parts are not shown in this figure, there is a tray 11 on which a plurality of wafers can be placed and which can be rotated, and a tray 11 on which a plurality of wafers can be placed and which can be rotated.
A pair of nozzles 15 that alternately flow a chemical solution and a hydrogen peroxide solution (or pure water) onto a predetermined wafer 13 placed on the wafer 1.
It consists of The tray 11 on which the wafers 13 are placed is controlled to rotate so that each wafer 13 is placed directly under the pair of nozzles 15, and the area around the tray 11 is filled with the chemical liquid and hydrogen peroxide solution (or pure water) that have been poured down. A curved edge 17 is provided to allow the accumulation of water. Further, the back side of the wafer 13 may be supported at several points by small protrusions so that the back side of the wafer 13 can also be cleaned. In the present invention, a batch type with multiple processes is used, but a single wafer type may be used. In addition, in addition to a pair of nozzles that flow down the chemical solution and hydrogen peroxide solution (or pure water) separately, it is also possible to prepare multiple nozzles.
It is also possible to cause a chemical solution or hydrogen peroxide solution (or pure water) to flow down from a predetermined nozzle depending on each situation.
【００２５】（実施例２）従来の薬液を含む混合洗浄液
槽を使用して本発明の方法を実施する場合の装置構成に
ついては、まず薬液槽と過酸化水素水槽とを用意し、こ
れら薬液槽と過酸化水素水槽とをヒータにて比較的低い
温度に維持し、ウエハーをカセットに入れて、カセット
に入れられたウエハーを薬液槽と過酸化水素水槽とに交
互に浸漬することにより本発明の方法を達成することが
できる。ただし、この場合には、浸漬の順序として薬液
槽に入れた後、過酸化水素水槽に浸漬するのが望ましい
。また、逆の順序で洗浄を行う場合には、その反応によ
り高温となった薬液がはねないように安全面での工夫が
必要である。これらの処理が槽間の一回の往復の処理で
洗浄が不十分な場合は、繰り返し行ってもよい。(Example 2) Regarding the apparatus configuration when carrying out the method of the present invention using a conventional mixed cleaning liquid tank containing a chemical liquid, first, a chemical liquid tank and a hydrogen peroxide tank are prepared, and these chemical liquid tanks are The present invention is carried out by maintaining the temperature of the chemical solution bath and the hydrogen peroxide tank at a relatively low temperature using a heater, placing the wafer in a cassette, and alternately immersing the wafer placed in the cassette in the chemical solution tank and the hydrogen peroxide tank. method can be achieved. However, in this case, it is preferable that the immersion sequence is to first put it in a chemical solution tank and then immerse it in a hydrogen peroxide water tank. Furthermore, when cleaning is performed in the reverse order, safety measures must be taken to prevent the chemical solution that has become hot due to the reaction from splashing. If these treatments are insufficient for cleaning after one round trip between the tanks, they may be repeated.
【００２６】この実施例２の構成例を図２に示す。この
図において、符号１９および２１は薬液槽および過酸化
水素水槽を示し、符号２３はカセットを、１３はウエハ
ーを、２５はカセット２３を運搬するアクチュエータを
それぞれ示す。An example of the configuration of this second embodiment is shown in FIG. In this figure, numerals 19 and 21 represent a chemical solution tank and a hydrogen peroxide tank, numeral 23 represents a cassette, numeral 13 represents a wafer, and numeral 25 represents an actuator for transporting the cassette 23, respectively.
【００２７】（実施例３）洗浄するウエハーをバッチ式
にシャワー洗浄する本発明の方法を実施する場合の装置
構成については、複数枚のウエハーを縦置きにして、ホ
ルダーに収納したものに、その上方に複数のシャーワー
ノズルを配置し、これらシャワーノズルからは、薬液と
過酸化水素水とが別々に噴出されるようにしている。こ
のシャワーノズルの配置は、複数のノズルを揃えてホル
ダーのウエハーに向けて配置してもよいし、これらノズ
ルを対向させてホルダーのウエハーにその先端が向き合
うようにしてもよい。また、これらノズルを対向させる
場合にあっては、ノズルをオフセット配置して、ホルダ
ーを移動させて、これらノズルからの液を被着するよう
にしてもよい。(Example 3) Regarding the apparatus configuration for implementing the method of the present invention in which wafers to be cleaned are batch-wise shower-cleaned, a plurality of wafers are placed vertically and stored in a holder. A plurality of shower nozzles are arranged above, and a chemical solution and a hydrogen peroxide solution are spouted separately from these shower nozzles. Regarding the arrangement of the shower nozzles, a plurality of nozzles may be aligned and arranged facing the wafer of the holder, or these nozzles may be opposed so that their tips face the wafer of the holder. Further, in the case where these nozzles are arranged to face each other, the nozzles may be arranged in an offset manner and the holder may be moved to deposit the liquid from these nozzles.
【００２８】この実施例３の構成例を図３に示す。この
図において、符号２７はウエハー１３を収納するホルダ
ーを、２９，３１は薬液または過酸化水素水あるいは純
水を広角で噴出することができるシャワーノズルである
。An example of the configuration of this third embodiment is shown in FIG. In this figure, reference numeral 27 is a holder for storing the wafer 13, and 29 and 31 are shower nozzles capable of spraying a chemical solution, hydrogen peroxide solution, or pure water at a wide angle.
【００２９】以上の３種の装置構成における洗浄を実施
する場合、薬液と過酸化水素水とのウエハー表面上での
直接の混合による洗浄が、１度で不十分なら洗浄が十分
となるまで繰り返してもよい。洗浄を行う温度条件は、
常温でもよいが、温めた液を使用すると、一層効果をあ
げることができる。さらに、本発明による洗浄後、従来
のような一定温度、一定濃度の薬液を含む混合洗浄液槽
を容易して、そこへ浸漬するようにしてもよい。ただし
、この混合洗浄液槽の保持温度は、従来の場合より温度
を下げて使用すると加温装置への負担等が小さくなるた
め十分な利点がある。When performing cleaning using the above three types of equipment configurations, if cleaning by directly mixing the chemical solution and hydrogen peroxide solution on the wafer surface is insufficient at one time, it may be repeated until cleaning is sufficient. It's okay. The temperature conditions for cleaning are
Although it can be used at room temperature, using a warmed solution will be even more effective. Further, after the cleaning according to the present invention, a conventional mixed cleaning liquid tank containing a chemical solution at a constant temperature and a constant concentration may be provided, and the body may be immersed therein. However, if the holding temperature of this mixed cleaning liquid tank is lower than that in the conventional case, the load on the heating device will be reduced, so there is a sufficient advantage.
【００３０】本発明のウエハーの洗浄方法によれば、薬
液を高温に維持する必要がないので、薬液の経時的劣化
がなく、劣化した薬液を交換する必要がないので、薬液
の使用量を低減することができる。According to the wafer cleaning method of the present invention, there is no need to maintain the chemical solution at a high temperature, so there is no deterioration of the chemical solution over time, and there is no need to replace the deteriorated chemical solution, so the amount of the chemical solution used can be reduced. can do.
【００３１】また、従来の方法だと洗浄に最低限必要な
薬液の使用量は、その洗浄槽の大きさで決まるが、本発
明の実施例１の場合には、ウエハー一枚当たり処理する
ウエハーの表面を覆うだけの薬液量があればよい。この
薬液の使用量は、ウエハーの大口径化に伴って増加する
が、その増加量が従来の方法と本発明の方法とでは異な
る。すなわち、従来の方法では、例えばウエハーの大き
さの３乗に比例して洗浄槽が大きくなるため、例えば６
インチウエハー用の槽と較べて、８インチウエハー用の
槽は約２．４倍となり、１０インチウエハー用の槽だと
約４．７倍の大きさになる。このため必然的に薬液の使
用量も増加する。これに対し、本発明では薬液の使用量
をウエハーの面積に比例させることが可能なため、６イ
ンチウエハーを基準として、８インチウエハーを処理す
る場合には約１．８倍増加し、１０インチウエハーでは
約２．７倍の増加で済む。In addition, in the conventional method, the minimum amount of chemical solution required for cleaning is determined by the size of the cleaning tank, but in the case of the first embodiment of the present invention, the amount of the wafer to be processed per wafer is It is sufficient to have enough chemical solution to cover the surface. The amount of this chemical solution used increases as the diameter of the wafer increases, but the amount of increase differs between the conventional method and the method of the present invention. In other words, in the conventional method, the size of the cleaning tank increases in proportion to the cube of the wafer size.
Compared to a tank for inch wafers, a tank for 8-inch wafers is about 2.4 times larger, and a tank for 10-inch wafers is about 4.7 times larger. For this reason, the amount of chemical solution used inevitably increases. In contrast, in the present invention, it is possible to make the amount of chemical used proportional to the area of the wafer, so when processing an 8-inch wafer based on a 6-inch wafer, the amount increases by about 1.8 times, and 10-inch For wafers, an increase of about 2.7 times is sufficient.
【００３２】以上、本発明の方法についての具体的な例
を説明したが、本発明は上記実施例に限定されず、本発
明の要旨を範囲内で種々な変更、応用が可能なものであ
る。Although specific examples of the method of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications and applications can be made within the scope of the gist of the present invention. .
【００３３】[0033]
【発明の効果】以上の説明から分かるように、本発明の
製造方法によれば、洗浄を行おうとするウエハーの部分
上に、酸またはアルカリ等の薬液と、純水または過酸化
水素水とを直接混合し、その化学的反応の際の反応熱に
より薬液を含む混合洗浄液を加温し、その加温された混
合洗浄液によりウエハーの洗浄を行おうとする部分を洗
浄するため、反応させた瞬間に大きな洗浄効果があるの
で、大幅なスピードアップが可能である。また、従来使
用されている温度まで、薬液を含む混合洗浄液の温度を
上げなくて済むので、ヒータへの負荷が低減される。さ
らに洗浄すべき箇所に必要量の薬液および純水または過
酸化水素水とを反応させるので、トータルの混合洗浄液
の使用量も低減することができる。Effects of the Invention As can be seen from the above explanation, according to the manufacturing method of the present invention, a chemical solution such as acid or alkali and pure water or hydrogen peroxide solution are applied to the part of the wafer to be cleaned. The mixed cleaning solution containing the chemical is heated by the heat of reaction during the chemical reaction, and the heated mixed cleaning solution cleans the part of the wafer that is to be cleaned. Since it has a great cleaning effect, it is possible to significantly speed up the process. Further, since it is not necessary to raise the temperature of the mixed cleaning liquid containing the chemical solution to the temperature conventionally used, the load on the heater is reduced. Furthermore, since the required amount of chemical solution and pure water or hydrogen peroxide solution are reacted on the area to be cleaned, the total amount of mixed cleaning liquid used can be reduced.
【図１】本発明の実施例１の装置構成を示す線図である
。FIG. 1 is a diagram showing the configuration of an apparatus according to a first embodiment of the present invention.
【図２】本発明の実施例２の装置構成を示す線図である
。FIG. 2 is a diagram showing the configuration of a device according to a second embodiment of the present invention.
【図３】本発明の実施例３の装置構成を示す線図である
。FIG. 3 is a diagram showing the configuration of a device according to a third embodiment of the present invention.
１１ 受け皿
１３ ウエハー
１５ ノズル
１７ 縁部
１９，２１ 薬液槽および過酸化水素水または純水の
槽２３ カセット
２５ アクチュエータ
２７ ホルダー
２９，３１ シャワーノズル11 saucer 13 wafer 15 nozzle 17 edge 19, 21 chemical tank and hydrogen peroxide or pure water tank 23 cassette 25 actuator 27 holder 29, 31 shower nozzle
Claims (5)
は純水とを混合して洗浄するにあたり、半導体基板上の
洗浄する部分上で薬液と過酸化水素水または純水とを直
接混合して洗浄を行うことを特徴とする半導体装置の製
造方法。Claim 1: When cleaning a semiconductor substrate by mixing a chemical solution with a hydrogen peroxide solution or pure water, the chemical solution and hydrogen peroxide solution or pure water are directly mixed on the portion of the semiconductor substrate to be cleaned. A method for manufacturing a semiconductor device, the method comprising cleaning.
、または塩酸である請求項１記載の半導体装置の製造方
法。2. The method of manufacturing a semiconductor device according to claim 1, wherein the chemical solution is sulfuric acid, ammonium hydroxide, or hydrochloric acid.
は純水とを混合して洗浄するにあたり、半導体基板を受
け皿上に載置し、その上から薬液を流下するノズルと、
過酸化水素水または純水を流下するノズルとが配置され
、それぞれ１個あるいは複数個のノズルから別々に薬液
または過酸化水素水を流下して半導体基板上で反応を行
わせることを特徴とする半導体装置の製造方法。3. When cleaning a semiconductor substrate by mixing a chemical solution with a hydrogen peroxide solution or pure water, a nozzle for placing the semiconductor substrate on a receiving tray and flowing the chemical solution down from above the semiconductor substrate;
Nozzles for flowing hydrogen peroxide solution or pure water are arranged, and the chemical solution or hydrogen peroxide solution is separately caused to flow down from one or more nozzles to cause a reaction on the semiconductor substrate. A method for manufacturing a semiconductor device.
は純水とを混合して洗浄するにあたり、保持具に収納さ
れた半導体基板を薬液槽と過酸化水素水または純水の槽
とに交互に浸漬することを特徴とする半導体装置の製造
方法。4. When cleaning a semiconductor substrate by mixing a chemical solution with a hydrogen peroxide solution or pure water, the semiconductor substrate housed in the holder is alternately placed in a chemical solution bath and a hydrogen peroxide solution or pure water bath. 1. A method for manufacturing a semiconductor device, comprising immersing it in water.
は純水とを混合して洗浄するにあたり、保持具に収納さ
れた半導体基板の上方に複数のシャワーノズルを配置し
、これら複数のシャワーノズルから薬液と過酸化水素水
または純水とが半導体基板へ向けて別々に噴出されるよ
うにしたことを特徴とする半導体装置の製造方法。5. When cleaning a semiconductor substrate by mixing a chemical solution and hydrogen peroxide solution or pure water, a plurality of shower nozzles are arranged above the semiconductor substrate housed in a holder, and the plurality of shower nozzles A method for manufacturing a semiconductor device, characterized in that a chemical solution and hydrogen peroxide solution or pure water are separately jetted toward a semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1204991A JPH04246827A (en) | 1991-02-01 | 1991-02-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1204991A JPH04246827A (en) | 1991-02-01 | 1991-02-01 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04246827A true JPH04246827A (en) | 1992-09-02 |
Family
ID=11794747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1204991A Pending JPH04246827A (en) | 1991-02-01 | 1991-02-01 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04246827A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012074601A (en) * | 2010-09-29 | 2012-04-12 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and substrate processing method |
| CN112652518A (en) * | 2019-10-11 | 2021-04-13 | 中芯国际集成电路制造（天津）有限公司 | Method for forming semiconductor device |
-
1991
- 1991-02-01 JP JP1204991A patent/JPH04246827A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012074601A (en) * | 2010-09-29 | 2012-04-12 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and substrate processing method |
| CN112652518A (en) * | 2019-10-11 | 2021-04-13 | 中芯国际集成电路制造（天津）有限公司 | Method for forming semiconductor device |
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