JP2000040682A - Cleaning method and device of semiconductor substrate - Google Patents
Cleaning method and device of semiconductor substrateInfo
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- JP2000040682A JP2000040682A JP10208299A JP20829998A JP2000040682A JP 2000040682 A JP2000040682 A JP 2000040682A JP 10208299 A JP10208299 A JP 10208299A JP 20829998 A JP20829998 A JP 20829998A JP 2000040682 A JP2000040682 A JP 2000040682A
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- processing
- semiconductor substrate
- gas
- cleaning
- solution
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体基板の製造
プロセスにおいて、半導体基板を洗浄及びリンスする洗
浄方法及び洗浄に用いられる装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning method for cleaning and rinsing a semiconductor substrate in a semiconductor substrate manufacturing process and an apparatus used for cleaning.
【０００２】[0002]
【従来の技術】一般に、半導体基板となるシリコンウエ
ーハの製造プロセスにおいて、ウエーハ表面及び自然酸
化膜がパーティクルや重金属によって汚染された状態で
熱処理が行われると、熱酸化膜のムラや、結晶欠陥等が
発生し、ウエーハ良品率が著しく低下する。2. Description of the Related Art Generally, in a manufacturing process of a silicon wafer to be a semiconductor substrate, if a heat treatment is performed in a state where the wafer surface and a natural oxide film are contaminated with particles or heavy metals, unevenness of a thermal oxide film, crystal defects, etc. Occurs, and the yield rate of wafers is remarkably reduced.
【０００３】そこで、従来においては、弗酸を純水で希
釈した溶液を用いた洗浄（以下弗酸洗浄という）を行う
ことにより、自然酸化膜自体を除去し、これによってウ
エーハ表面及び自然酸化膜中の重金属を除去することが
広く行われる。Therefore, conventionally, a natural oxide film itself has been removed by performing cleaning using a solution of hydrofluoric acid diluted with pure water (hereinafter referred to as hydrofluoric acid cleaning), thereby removing the surface of the wafer and the natural oxide film. It is widely practiced to remove heavy metals therein.
【０００４】また、表面の酸化とフッ酸溶液による酸化
層の除去をそれぞれ単独処理として、あるいは連続処理
として行う方法も提案されている。Further, a method has been proposed in which the oxidation of the surface and the removal of the oxide layer with a hydrofluoric acid solution are performed individually or continuously.
【０００５】例えば、特開平９ー２８３４８４号公報に
記載の発明は、酸化性溶液で半導体ウエーハ表面を酸化
させて、該半導体ウエーハ表面に酸化膜を形成する第１
の工程と、その後、酸化膜を選択的にエッチングするエ
ッチング液によって前記酸化膜をエッチングして、該酸
化膜とともに、該半導体ウエーハ表面に付着している物
質を除去する第２工程とを備えている。For example, the invention described in Japanese Patent Application Laid-Open No. 9-283484 discloses a first method in which a semiconductor wafer surface is oxidized with an oxidizing solution to form an oxide film on the semiconductor wafer surface.
And a second step of thereafter etching the oxide film with an etchant that selectively etches the oxide film to remove a substance attached to the surface of the semiconductor wafer together with the oxide film. I have.
【０００６】この場合、酸化により有機物分解とシリコ
ン表面のメタル等を酸化膜中に取り込む働きがあり、酸
化膜の形成に加え、ウエーハ表面の有機物を分解除去す
る効果もあり、フッ酸溶液によるエッチング処理は、酸
化膜除去による膜中の不純物、主として金属不純物を除
去して表面を撥水面とするための処理である。In this case, there is a function of decomposing organic substances by oxidation and taking in metals and the like on the silicon surface into the oxide film. In addition to the formation of the oxide film, it has the effect of decomposing and removing organic substances on the wafer surface. The treatment is a treatment for removing impurities, mainly metal impurities, in the film by removing the oxide film to make the surface water-repellent.
【０００７】従って、不純物層をオゾンにより酸化する
酸化膜形成処理、及び、前記酸化膜を弗酸溶液で除去す
る連続処理を複数回繰り返すことにより、ウエーハ表面
不純物を効果的に除去することが可能となる。Therefore, the wafer surface impurities can be effectively removed by repeating a plurality of times of an oxide film forming process of oxidizing the impurity layer with ozone and a continuous process of removing the oxide film with a hydrofluoric acid solution. Becomes
【０００８】[0008]
【発明が解決しようとする課題】このような洗浄法を用
いる場合は、それぞれ処理は、専用の槽で行っており、
複数回数の処理を行う場合は、特に各回数ごとに異なる
専用の処理槽によって、洗浄が行われていた。When such a cleaning method is used, each treatment is performed in a dedicated tank,
In the case of performing the processing a plurality of times, the cleaning has been performed in a special processing tank that is different for each number of times.
【０００９】しかし、各処理槽に搬送する際、表面が撥
水状態となっているウエーハは、パーティクル汚染が生
じやすくなり、撥水状態の表面に直接吸着された不純物
は、その後、再酸化及びエッチング処理を行っても、不
純物除去は困難となる問題があった。However, when the wafer is transported to each processing tank, the wafer whose surface is in a water-repellent state is liable to cause particle contamination, and the impurities directly adsorbed on the water-repellent surface are subsequently reoxidized and re-oxidized. There is a problem that even if the etching process is performed, it is difficult to remove impurities.
【００１０】この問題を解決するために、従来において
は、洗浄後のウエーハを他槽へ搬送することなく、同一
処理槽内に設置しておき、洗浄液を入れ替えることによ
り、一連の洗浄処理が行われていた。In order to solve this problem, conventionally, a series of cleaning treatments is performed by placing a wafer after cleaning in the same processing tank without transferring it to another tank and replacing the cleaning liquid. Had been
【００１１】すなわち、第１の処理液でウエーハの洗浄
処理を行った後、ウエーハを同一処理槽内に設置したま
ま、前記第１の処理液を処理槽から排水し、その後、第
２、第３の処理液を同一処理槽に供給する方法が用いら
れていた。That is, after performing the cleaning treatment of the wafer with the first treatment liquid, the first treatment liquid is drained from the treatment tank while the wafer is installed in the same treatment tank, and then the second and the second treatment liquid are discharged. The method of supplying the processing liquid of No. 3 to the same processing tank has been used.
【００１２】しかし、ウエーハを他槽へ搬送することな
く、同一処理槽内に設置して、処理液の排水及び供給に
より、処理液の入れ替えを行うと、第１の処理液を排水
後、第２の処理液を供給するまでの間、ウエーハは、空
気中に晒されることになり、ウエーハ表面に空気中のパ
ーティクル等が付着し、汚染を防ぐことはできなかっ
た。However, if the processing liquid is replaced by draining and supplying the processing liquid without transferring the wafer to another tank, the first processing liquid is drained, and then the second processing liquid is discharged. Until the treatment liquid No. 2 was supplied, the wafer was exposed to the air, and particles and the like in the air adhered to the surface of the wafer, so that contamination could not be prevented.
【００１３】そこで、本発明は、前記問題点に鑑みて、
半導体基板の洗浄処理工程に関し、同一処理槽内で、処
理液の排水・供給等の入れ替えすることなく、同一処理
液に半導体基板を浸漬させたまま、処理液の入れ替えを
行うことなく、一連の処理工程を行い、洗浄後不純物が
付着しやすくなっている半導体基板の汚染防止し、ま
た、処理液のリサイクル使用により、製造コストの低減
を図るものである。Therefore, the present invention has been made in view of the above problems,
Regarding the cleaning process of the semiconductor substrate, a series of processes are performed in the same processing tank without replacing the drainage / supply of the processing solution, without replacing the processing solution while the semiconductor substrate is immersed in the same processing solution. A processing step is performed to prevent contamination of a semiconductor substrate to which impurities easily adhere after cleaning, and to reduce manufacturing costs by recycling and using a processing liquid.
【００１４】[0014]
【課題を解決するための手段】本願第１請求項に記載し
た発明は、半導体基板の製造プロセスにおける半導体基
板の洗浄方法において、同一槽内で、一連の洗浄処理を
行うものであって、被洗浄物である半導体基板を、処理
槽に導入した第１の処理液に浸漬させる工程と、前記基
板を第１の処理液に浸漬させたまま、酸化性ガスを前記
処理液に任意の溶解度となるように溶解する工程と、前
記酸化性ガスが溶解された第２の処理液で、前記半導体
基板を洗浄する工程と、前記第２の処理液に、不活性ガ
ス等の溶媒と反応しないガスを導入して、前記第２の処
理液に溶存している酸化性ガスの一部又は全部を脱気さ
せる工程と、前記溶存酸化性ガスが脱気された第３の処
理液で、再び、前記半導体基板を洗浄する工程とを備え
た半導体基板の洗浄方法である。According to a first aspect of the present invention, there is provided a method of cleaning a semiconductor substrate in a semiconductor substrate manufacturing process, wherein a series of cleaning processes are performed in the same tank. A step of immersing a semiconductor substrate, which is a cleaning object, in a first processing solution introduced into a processing tank; and, while immersing the substrate in the first processing solution, an oxidizing gas having an arbitrary solubility in the processing solution. And a step of cleaning the semiconductor substrate with a second processing solution in which the oxidizing gas has been dissolved, and a method in which the second processing solution does not react with a solvent such as an inert gas. And a step of degassing a part or all of the oxidizing gas dissolved in the second processing liquid, and the third processing liquid in which the dissolved oxidizing gas is degassed, Cleaning the semiconductor substrate, comprising the steps of: It is a method.
【００１５】本発明は、第１の処理液に浸漬して、洗浄
処理を行った半導体基板を、前記第１の処理液中に保持
したまま、前記第１の処理液に酸化性ガスを導入して、
液質を変化させて第２の処理液とし、更に、前記第２の
処理液中の酸化ガスを脱気しつつ、不活性ガス等を導入
して、第３の処理液とするといったように、半導体基板
を空気中に晒すことなく、同一処理槽内で、一連の洗浄
処理工程が行われる方法であるため、半導体基板の表面
の汚染が可及的に低減される。According to the present invention, an oxidizing gas is introduced into the first processing liquid while the semiconductor substrate, which has been subjected to the cleaning treatment by being immersed in the first processing liquid, is held in the first processing liquid. do it,
The liquid quality is changed to a second processing liquid, and an oxidizing gas in the second processing liquid is degassed while an inert gas or the like is introduced to form a third processing liquid. Since a series of cleaning processing steps are performed in the same processing tank without exposing the semiconductor substrate to the air, contamination of the surface of the semiconductor substrate is reduced as much as possible.
【００１６】また、同一処理液に所定ガスを導入して、
一連の洗浄処理工程を行うため、従来の複数の処理液を
供給する洗浄方法と比べ、所定ガスを溶解・脱気して液
質を変化させるため、ベースとなる同一処理液をリサイ
クル使用して、製造コストの低減を可能とする。Further, a predetermined gas is introduced into the same processing solution,
In order to perform a series of cleaning processing steps, compared to the conventional cleaning method that supplies a plurality of processing liquids, the same processing liquid as the base is recycled using the same processing liquid to dissolve and degas a predetermined gas and change the liquid quality. In addition, the manufacturing cost can be reduced.
【００１７】また、従来の方法で必要であった半導体基
板の搬送時間、又は処理液の排水・供給の時間を削減す
ることができ、効率的に洗浄処理を行うことができる。In addition, the time required for transporting the semiconductor substrate or the time required for draining / supplying the processing liquid, which is required in the conventional method, can be reduced, and the cleaning process can be performed efficiently.
【００１８】本願第２請求項に記載の発明は、前記請求
項１記載の半導体基板の洗浄方法において、前記第３の
処理液を排水した後、同一槽内で、前記洗浄処理後の半
導体基板を常温純水、酸化性ガス溶解水、３０℃以上の
温純水、常温純水の順でリンス処理を行う工程を備えた
半導体基板の洗浄方法である。According to a second aspect of the present invention, in the method for cleaning a semiconductor substrate according to the first aspect, after the third processing liquid is drained, the semiconductor substrate after the cleaning processing is placed in the same tank. This is a method for cleaning a semiconductor substrate, comprising a step of performing a rinsing treatment in the order of normal temperature pure water, oxidizing gas dissolved water, warm pure water of 30 ° C. or higher, and normal temperature pure water.
【００１９】このように、第１の処理液によって、例え
ば、表面撥水性状態のように、不純物を吸着しやすい状
態となっている半導体基板を、他槽へ搬送することな
く、同一槽において、複数の処理工程を行うことができ
るため、各工程の処理を容易とし、パーティクルや金属
不純物等の付着を防止して良品率を向上することが可能
となる。As described above, the semiconductor substrate, which is in a state in which impurities are easily adsorbed, for example, in a water-repellent state by the first processing liquid, is not transferred to another tank, but is transferred to the same tank. Since a plurality of processing steps can be performed, the processing in each step can be facilitated, and adhesion of particles, metal impurities, and the like can be prevented, and the yield can be improved.
【００２０】例えば、第１の処理液として、フッ化水素
水溶液に浸漬処理した半導体基板を常温純水に浸漬して
リンス処理することにより、半導体基板表面に付着する
弗素イオン等の残留イオンが除去され、酸化性ガスが溶
存する溶解水により、半導体基板表面を酸化して親水面
とすることが可能となる。For example, as a first treatment liquid, a semiconductor substrate immersed in an aqueous solution of hydrogen fluoride is immersed in pure water at normal temperature and rinsed to remove residual ions such as fluoride ions adhering to the surface of the semiconductor substrate. Then, the surface of the semiconductor substrate can be oxidized to a hydrophilic surface by the dissolved water in which the oxidizing gas is dissolved.
【００２１】次に、溶存ガスは、高温の溶媒には溶解し
にくいため、その後、温純水により基板表面を処理する
ことにより、常温の純水よりも効果的に残留している酸
化性ガスを半導体基板表面から除去することができ、半
導体基板表面の酸化の進行を抑制することが可能とな
る。Next, since the dissolved gas is hardly dissolved in a high-temperature solvent, the surface of the substrate is thereafter treated with hot pure water to remove the oxidizing gas remaining more effectively than pure water at room temperature. It can be removed from the substrate surface, and the progress of oxidation on the semiconductor substrate surface can be suppressed.
【００２２】また、最後に常温純水に半導体基板を浸漬
することにより、半導体基板は室温に戻されるため、例
えば、ＩＰＡ蒸気乾燥のように、半導体基板を室温に回
帰させることが必要のある後工程が控えている場合で
も、影響を及ぼさない。Further, since the semiconductor substrate is finally returned to room temperature by immersing the semiconductor substrate in room temperature pure water, it is necessary to return the semiconductor substrate to room temperature, for example, by IPA vapor drying. Even if the process is waiting, it has no effect.
【００２３】本願第３請求項に記載した発明は、半導体
基板の製造プロセスにおいて使用される半導体基板の洗
浄装置であって、被洗浄物である半導体基板を処理液に
浸漬させる処理槽と、前記基板を処理液に浸漬させたま
ま、前記処理槽に任意のガスを導入して第２又は第３の
複数の処理液とする機構を備えた半導体基板の洗浄装置
である。An invention according to a third aspect of the present invention is a semiconductor substrate cleaning apparatus used in a semiconductor substrate manufacturing process, comprising: a processing tank for immersing a semiconductor substrate to be cleaned in a processing liquid; A semiconductor substrate cleaning apparatus provided with a mechanism for introducing an arbitrary gas into the processing bath to convert the substrate into a second or third processing liquid while the substrate is immersed in the processing liquid.
【００２４】このように、同一処理槽内に、任意ガスを
導入して、第２又は第３の処理液とすることにより、複
数工程を同一の処理槽内で行うことができ、一の処理工
程の後、表面撥水状態となって汚染されやすい状態とな
っている半導体基板を他槽へ搬送することなく、同一処
理槽内で、次処理を行うことが可能となり、基板表面の
汚染を防止して、良好な製造処理プロセスが行われる。As described above, by introducing an arbitrary gas into the same processing tank to form the second or third processing liquid, a plurality of steps can be performed in the same processing tank. After the process, the next processing can be performed in the same processing tank without transporting the semiconductor substrate which is in a water-repellent state to be easily contaminated to another tank, thereby reducing the contamination on the substrate surface. In this way, a good manufacturing process is performed.
【００２５】また、第１の処理液に所定ガスを導入し
て、第２又は第３の処理液とするため、第１の処理液を
そのままリサイクル使用することができ、製造コストの
低減を可能とする。Further, since a predetermined gas is introduced into the first processing liquid to form the second or third processing liquid, the first processing liquid can be recycled as it is, and the manufacturing cost can be reduced. And
【００２６】本願第４請求項に記載した発明は、前記請
求項３又は４記載の発明において、前記処理槽内に、常
温純水、酸化性ガス溶解水、３０℃以上の温純水、常温
純水等の各リンス処理液を、所定順序で導入する機構を
備えた半導体基板の洗浄装置である。According to a fourth aspect of the present invention, in the third or fourth aspect of the present invention, room temperature pure water, oxidizing gas dissolved water, warm pure water having a temperature of 30 ° C. or more, and room temperature pure water are contained in the processing tank. And a cleaning device for a semiconductor substrate having a mechanism for introducing each of the rinsing liquids in a predetermined order.
【００２７】このように、第１の処理液により洗浄処理
された半導体基板を、他槽へ搬送することなく、同一処
理槽内において、複数の洗浄処理工程が行われるため、
洗浄処理が容易となり、作業性が向上する。As described above, a plurality of cleaning processing steps are performed in the same processing tank without transporting the semiconductor substrate cleaned by the first processing liquid to another tank.
The cleaning process is facilitated, and the workability is improved.
【００２８】[0028]
【発明の実施の形態】以下に本発明を具体例に基づき説
明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to specific examples.
【００２９】図１は、本発明の具体例に係る洗浄装置の
概略構成を示す図である。FIG. 1 is a diagram showing a schematic configuration of a cleaning apparatus according to a specific example of the present invention.
【００３０】図１に示すように、本発明の洗浄装置１
は、半導体基板を洗浄する内槽２及び外槽３の２つの被
処理物処理槽を備えている。As shown in FIG. 1, the cleaning apparatus 1 of the present invention
Is provided with two processing tanks for cleaning the semiconductor substrate, an inner tank 2 and an outer tank 3.
【００３１】前記被処理物処理槽のうち外槽３は、処理
液循環ポンプ４及び循環濾過フィルター５を含む循環ラ
イン１５が接続されている。A circulation line 15 including a treatment liquid circulation pump 4 and a circulation filtration filter 5 is connected to the outer tank 3 of the treatment object treatment tank.
【００３２】また、内槽２には、気液分離機７と連結す
る循環ライン１６が接続されている。また、気液分離機
７からは、排出口へ通じるライン２２が分岐している。A circulation line 16 connected to the gas-liquid separator 7 is connected to the inner tank 2. Further, a line 22 leading to the discharge port branches from the gas-liquid separator 7.
【００３３】前記循環ライン１５及び１６は、気液混合
モジュール６に接続されている。The circulation lines 15 and 16 are connected to the gas-liquid mixing module 6.
【００３４】前記気液混合モジュール６には、酸化性ガ
ス、不活性ガスが任意量で混合できるように、ガス導入
ライン１７が接続されている。A gas introduction line 17 is connected to the gas-liquid mixing module 6 so that an oxidizing gas and an inert gas can be mixed in arbitrary amounts.
【００３５】すなわち、酸化性ガス及び不活性ガスは、
エアバルブ２０、２１を備えたライン上に設置され、前
記エアバルブ２０、２１を備えたラインが合流して、ガ
ス導入ライン１７となり、このガス導入ライン１７上に
それぞれのガス流量を測定する流量計９、ガス経路切換
え器８、圧力計１０、エアーバルブ１２等が設置され、
前記ガス導入ライン１７が気液混合モジュール６に連結
される構成となっている。That is, the oxidizing gas and the inert gas are:
The lines provided with the air valves 20, 21 are installed on a line provided with the air valves 20, 21, and the lines provided with the air valves 20, 21 merge into a gas introduction line 17, and a flow meter 9 for measuring each gas flow on the gas introduction line 17. , Gas path switching device 8, pressure gauge 10, air valve 12, etc. are installed,
The gas introduction line 17 is configured to be connected to the gas-liquid mixing module 6.
【００３６】また、ガス経路切換え器８からは、ドレイ
ン１８及び排出口１９に連結する２つのラインが分岐
し、ドレイン１８及び排出口１９に連結されるラインの
途中にノズル１４及び１３を備えている。また、排出口
１９に連結されるラインには、圧力計１１が設置されて
いる。Further, from the gas path switching device 8, two lines connected to the drain 18 and the outlet 19 are branched, and nozzles 14 and 13 are provided in the middle of the line connected to the drain 18 and the outlet 19. I have. A pressure gauge 11 is provided on a line connected to the outlet 19.
【００３７】本例の洗浄装置１によれば、まず、エアバ
ルブ２０を開放して、酸化性ガスを、ガス経路切換え器
８に導入し、更に、エアバルブ１２を開放して、気液混
合モジュール６に通流し、この気液混合モジュール６か
ら循環ライン１６を通流して、処理液中に前記酸化性ガ
ス（本例においては、オゾン）を導入する。According to the cleaning apparatus 1 of the present embodiment, first, the air valve 20 is opened, the oxidizing gas is introduced into the gas path switching device 8, and the air valve 12 is further opened, so that the gas-liquid mixing module 6 is opened. Then, the oxidizing gas (in this example, ozone) is introduced into the processing liquid through the circulation line 16 from the gas-liquid mixing module 6.
【００３８】処理槽２乃至３内の処理液は、酸化性ガス
の導入より、後述する具体例における第２の処理液とし
て、被処理物処理槽２乃至３内の半導体基板を洗浄処理
する。ここで、ガス経路切換え器８は、逆流防止も兼ね
たガス圧力調整機構であり、導入する酸化性ガス等のガ
ス圧を調整し、所定ガス圧（例えば、１〜２ｋｇ／ｃｍ
2）にして、気液混合モジュール６内にガスを吹込む。
この気液混合モジュール６は、二重構造となっており、
気液混合モジュール６内は、撥水膜で仕切られている。
この気液混合モジュール６内の片方を洗浄液が流れ、も
う片方にガスが流れることにより、前記撥水性膜を介し
て前記洗浄液中に所定量のガスが溶解されて、所定の処
理液となる。循環ライン中の液圧が高いと、気液混合モ
ジュール６内を撥水膜で仕切っても、逆流する水分があ
る。前記ガス経路切換え器８は、この逆流した水分を、
ガス経路切換え器８内部に貯留し、エアバルブ１４を開
放して、ドレイン１８から、余分の水分を排水する。The processing liquid in the processing tanks 2 and 3 is used as a second processing liquid in a specific example to be described later to clean the semiconductor substrates in the processing tanks 2 and 3 by introducing an oxidizing gas. Here, the gas path switching device 8 is a gas pressure adjusting mechanism that also serves to prevent backflow, adjusts the gas pressure of the oxidizing gas or the like to be introduced, and sets a predetermined gas pressure (for example, 1 to 2 kg / cm).
2 ), gas is blown into the gas-liquid mixing module 6.
This gas-liquid mixing module 6 has a double structure,
The inside of the gas-liquid mixing module 6 is partitioned by a water-repellent film.
When a cleaning liquid flows through one side of the gas-liquid mixing module 6 and a gas flows through the other side, a predetermined amount of gas is dissolved in the cleaning liquid via the water-repellent film to form a predetermined processing liquid. If the liquid pressure in the circulation line is high, there is water flowing backward even if the inside of the gas-liquid mixing module 6 is partitioned by the water-repellent film. The gas path switching device 8 removes the water that has flowed back,
It is stored inside the gas path switch 8, the air valve 14 is opened, and excess water is drained from the drain 18.
【００３９】前記第１の処理液及び酸化性ガスが導入さ
れた第２の処理液で半導体基板を洗浄処理した後、エア
バルブ２０を閉じて、エアバルブ２１の開放へと切換
え、前記処理液中に不活性ガスを導入して、前記第２の
処理液中に溶解している酸化性ガスの一部又は全部を脱
気する。不活性ガスの導入によって、酸化性ガスが脱気
された洗浄液は、第２の処理液よりも酸化作用の低い第
３の処理液となり、処理液の交換を行うことなく、次の
処理工程を行うことができる。After cleaning the semiconductor substrate with the first processing liquid and the second processing liquid into which the oxidizing gas has been introduced, the air valve 20 is closed and the air valve 21 is switched to the open state. By introducing an inert gas, part or all of the oxidizing gas dissolved in the second processing liquid is degassed. The cleaning liquid from which the oxidizing gas has been degassed by the introduction of the inert gas becomes a third processing liquid having a lower oxidizing effect than the second processing liquid, and the next processing step can be performed without replacing the processing liquid. It can be carried out.
【００４０】また、気液混合モジュール６から導入した
ガスのうち、洗浄液に溶解しなかった、未溶解分のガス
は、気液分離器７により、処理液から分離されて、排気
される構成となっている。Further, of the gases introduced from the gas-liquid mixing module 6, the undissolved gas that has not been dissolved in the cleaning liquid is separated from the processing liquid by the gas-liquid separator 7 and exhausted. Has become.
【００４１】このように、本発明の洗浄装置１は、処理
液の入れ替えを行うことなく、所定ガスを第１の処理液
又は第２の処理液に導入して、所定の処理液とすること
ができ、洗浄処理により撥水性等となっている半導体基
板を他槽へ搬送することなく、一連の洗浄処理を同一処
理槽内で行うことが可能となり、半導体基板搬送過程で
付着しやすかった、パーティクルや金属等しい半導体基
板表面の汚染を防止することが可能となる。As described above, in the cleaning apparatus 1 of the present invention, a predetermined gas is introduced into the first processing liquid or the second processing liquid without changing the processing liquid to obtain the predetermined processing liquid. It is possible to perform a series of cleaning processes in the same processing tank without transporting the semiconductor substrate that has become water repellent or the like by the cleaning process to another tank, and it is easy to adhere in the semiconductor substrate transport process. It is possible to prevent contamination of the surface of the semiconductor substrate, which is equivalent to particles or metal.
【００４２】また、処理液内に所定ガスを導入する簡易
な構成で、脱気と組み合わせることにより処理液をリサ
イクル使用することができる。Further, the processing liquid can be recycled and used in combination with degassing with a simple structure for introducing a predetermined gas into the processing liquid.
【００４３】次に、前記洗浄装置を用いた本発明の具体
例に係る、半導体基板の洗浄方法について説明する。Next, a method of cleaning a semiconductor substrate according to a specific example of the present invention using the cleaning apparatus will be described.
【００４４】本例においては、酸化性ガスとしてオゾン
ガスを用い、前記オゾンガスを脱気するガスとして酸素
ガスを用いている。In this embodiment, ozone gas is used as the oxidizing gas, and oxygen gas is used as the gas for removing the ozone gas.
【００４５】（具体例１）まず、処理１として、濃度
０．１ｗｔ％の希弗酸溶液を第１の処理液として、被処
理物処理槽内に導入し、前記処理液に半導体基板を１０
秒間浸漬する。次に、処理２として、前記フッ酸溶液に
溶存値３０ｐｐｍとなるまで、オゾンガスを導入する。
その後、処理３として、前記オゾンガスが吹込まれた第
２の処理液に半導体基板を浸漬させる。前記処理２及び
３を行う時間は５分間程度である。(Specific Example 1) First, as a treatment 1, a dilute hydrofluoric acid solution having a concentration of 0.1 wt% is introduced as a first treatment liquid into a treatment tank, and a semiconductor substrate is added to the treatment liquid for 10 minutes.
Soak for seconds. Next, as treatment 2, ozone gas is introduced until the dissolved value in the hydrofluoric acid solution becomes 30 ppm.
Thereafter, as a process 3, the semiconductor substrate is immersed in the second processing solution into which the ozone gas has been blown. The time for performing the processes 2 and 3 is about 5 minutes.
【００４６】前記浸漬処理３を行うことにより、被洗浄
物である半導体基板弗酸のエッチングを妨げる有機物が
吸着・堆積していても、オゾンの強力な酸化により酸化
分解すると同時にフッ酸によるエッチングが行われ、半
導体基板表面が、均一かつ安定なエッチングレートとな
るようにエッチングされる。By performing the immersion treatment 3, even if an organic substance which hinders the etching of the semiconductor substrate hydrofluoric acid to be cleaned is adsorbed and deposited, it is oxidized and decomposed by the strong oxidation of ozone and simultaneously the etching with hydrofluoric acid is performed. Then, the surface of the semiconductor substrate is etched so as to have a uniform and stable etching rate.
【００４７】次に、処理４としてオゾンガス溶存値が５
ｐｐｍ程度になるまで、前記処理液に酸素ガスを導入
し、溶液中のオゾンを脱気する。その後、処理５とし
て、前記オゾンが脱気された第３の処理液に半導体基板
を浸漬する。前記処理４及び処理５を行う時間は３分間
程度である。オゾンの酸化力が減少するため、基板表面
に形成される自然酸化膜は薄くなる。このため、例え
ば、半導体ウエーハ表面の有機物が完全に分解されずに
酸化膜中に取り込まれたり、ナトリウムやカリウム等の
酸化を受けやすい金属の酸化膜中への残存を防止するこ
とができる。Next, as treatment 4, the ozone gas dissolved value is 5
Oxygen gas is introduced into the treatment liquid until the amount becomes about ppm, and ozone in the solution is degassed. Thereafter, as a process 5, the semiconductor substrate is immersed in the third treatment liquid from which the ozone has been degassed. The time for performing the processes 4 and 5 is about 3 minutes. Since the oxidizing power of ozone decreases, the natural oxide film formed on the substrate surface becomes thin. Therefore, for example, it is possible to prevent an organic substance on the surface of the semiconductor wafer from being taken into the oxide film without being completely decomposed, or to prevent a metal such as sodium or potassium which is easily oxidized from remaining in the oxide film.
【００４８】前記処理５を行うと、ウエーハ表面でのオ
ゾンガスの酸化能力が低下するため酸化レートよりも、
フッ酸のエッチングレートの方が勝るようになり、半導
体ウエーハ表面は、撥水性となる。この撥水性の程度
は、制御する溶存濃度値や、浸漬時間により変化させる
ことが可能であるが、５ｐｐｍ程度のオゾンガスが溶解
されていれば、浸漬時間が長くなってもウエーハ表面が
完全な撥水性となることはない。When the treatment 5 is performed, the oxidizing ability of the ozone gas on the surface of the wafer is reduced.
The etching rate of hydrofluoric acid becomes superior, and the surface of the semiconductor wafer becomes water repellent. The degree of the water repellency can be changed by controlling the dissolved concentration value or the immersion time. However, if about 5 ppm of ozone gas is dissolved, the wafer surface is completely repelled even if the immersion time is long. It will not be aqueous.
【００４９】前記処理５工程の後、処理６として前記処
理液に、溶存値１０ｐｐｍとなるように再びオゾンガス
を溶解して、半導体ウエーハを浸漬する。処理６の工程
時間は、１分程度である。前記処理６を行うことによ
り、半導体ウエーハの撥水性表面に酸化処理が行われ、
再度、ウエーハ表面が親水面となる。After the fifth treatment, as a sixth treatment, ozone gas is dissolved again in the treatment liquid so as to have a dissolved value of 10 ppm, and the semiconductor wafer is immersed. The processing time of the process 6 is about 1 minute. By performing the treatment 6, the water repellent surface of the semiconductor wafer is oxidized,
Again, the wafer surface becomes the hydrophilic surface.
【００５０】次に処理７として、約２分間、室温純水リ
ンス処理が行われ、処理８として、ＩＰＡ（イソプロピ
ルアルコール）による蒸気乾燥が行われる。Next, as a process 7, a room temperature pure water rinsing process is performed for about 2 minutes, and as a process 8, steam drying with IPA (isopropyl alcohol) is performed.
【００５１】このように、フッ化水素溶液浸漬後の表面
が撥水性の状態となっている半導体基板を他槽へ搬送す
ることなく、同一槽内で、各処理を行うことが可能とな
るため、撥水性状態の基板表面に付着しやすいパーティ
クルや、金属不純物の付着を低減し、良好な半導体ウエ
ーハの洗浄を可能とすることができる。As described above, it is possible to perform each processing in the same tank without transporting the semiconductor substrate having a water-repellent surface after immersion in the hydrogen fluoride solution to another tank. In addition, it is possible to reduce the adhesion of particles and metal impurities that easily adhere to the surface of the substrate in a water-repellent state, thereby enabling good cleaning of a semiconductor wafer.
【００５２】次に、本発明を用いた第２の具体例につい
て説明する。Next, a second specific example using the present invention will be described.
【００５３】本例においては、酸化性ガスとしてオゾン
ガスを用い、前記オゾンガスを脱気するガスとして酸素
ガスを用いている。In this embodiment, ozone gas is used as the oxidizing gas, and oxygen gas is used as the gas for removing the ozone gas.
【００５４】（実施例２）まず、処理１として、濃度
０．１ｗｔ％の希フッ酸溶液を第１の処理液とし、前記
第１の処理液に半導体基板を１０秒間浸漬する。次に、
処理２として、前記フッ酸溶液に溶存値３０ｐｐｍとな
るまで、オゾンガスを吹込む。その後、処理３として、
前記オゾンガスが吹込まれた第２の処理液に半導体ウエ
ーハを浸漬させる。前記処理２及び３を行う時間は５分
間程度である。Embodiment 2 First, as a treatment 1, a dilute hydrofluoric acid solution having a concentration of 0.1 wt% is used as a first treatment liquid, and a semiconductor substrate is immersed in the first treatment liquid for 10 seconds. next,
In process 2, ozone gas is blown into the hydrofluoric acid solution until the dissolved value becomes 30 ppm. Then, as processing 3,
The semiconductor wafer is immersed in the second processing liquid into which the ozone gas has been blown. The time for performing the processes 2 and 3 is about 5 minutes.
【００５５】次に、処理４として、アルゴン（Ａｒ）ガ
スによる第２の処理液中の溶存オゾンの脱気が行われ、
処理液を希フッ酸溶液に戻す。Next, as treatment 4, degassing of dissolved ozone in the second treatment liquid with argon (Ar) gas is performed.
The treatment liquid is returned to the diluted hydrofluoric acid solution.
【００５６】次に、処理５として、前記希フッ酸溶液と
なった第３の処理液に半導体ウエーハを浸漬する。前記
処理４及び処理５を行う時間は、３分程度である。Next, as a treatment 5, the semiconductor wafer is immersed in the third treatment liquid which has become the diluted hydrofluoric acid solution. The time for performing the processes 4 and 5 is about 3 minutes.
【００５７】その後、処理６として、同一槽内に常温純
水を供給し、リンス処理が行われる。半導体基板をリン
スすることにより、基板表面に一部終端しているフッ素
イオン等を水素イオンで置換する。処理６の工程時間は
１分程度である。Thereafter, as processing 6, rinsing is performed by supplying room temperature pure water into the same tank. By rinsing the semiconductor substrate, fluorine ions and the like partially terminated on the substrate surface are replaced with hydrogen ions. The processing time of the process 6 is about 1 minute.
【００５８】次に、処理７として、前記処理液にオゾン
ガス溶存値１０ｐｐｍとなるようにオゾンを溶解し、リ
ンス処理を行う。処理７を行う時間は、２分程度であ
る。前記常温純水リンス処理によって、ウエーハ表面の
弗素イオンが水素イオンに置換された半導体ウエーハ
は、処理７のオゾンガス溶存処理液により、半導体ウエ
ーハ表面が親水性となる。Next, as a treatment 7, rinsing treatment is performed by dissolving ozone in the treatment liquid so as to have an ozone gas dissolved value of 10 ppm. The time for performing the process 7 is about 2 minutes. The semiconductor wafer in which fluorine ions on the wafer surface have been replaced with hydrogen ions by the ordinary temperature pure water rinsing treatment becomes hydrophilic by the ozone gas-dissolved treatment liquid of the treatment 7.
【００５９】この時のウエーハ表面は、撥水面となって
いるため、より高濃度のオゾンガス溶存処理液でリンス
処理すれば、より短時間でウエーハ表面の親水化が可能
となり、ベア基板表面への不純物種の吸着を防止するこ
とができる。Since the wafer surface at this time is a water-repellent surface, rinsing with a higher-concentration ozone gas-dissolved treatment liquid makes it possible to hydrophilize the wafer surface in a shorter period of time, and the bare substrate surface Adsorption of impurity species can be prevented.
【００６０】次に、処理８として、３５℃の温純水でリ
ンス処理を、１分程度行う。３５℃の温純水でウエーハ
表面のリンス処理を行うことにより、ウエーハ表面に残
留しているオゾンを分解して効果的に取り除くことがで
きる。Next, as a treatment 8, a rinsing treatment is performed for about one minute with warm pure water at 35 ° C. By rinsing the wafer surface with warm pure water at 35 ° C., ozone remaining on the wafer surface can be decomposed and removed effectively.
【００６１】次に、処理９として、ＩＰＡ蒸気乾燥法に
より、約６分間半導体基板を乾燥する。通常オゾン水を
処理した後は、その後純水によってウエーハ表面をリン
スしても、オゾン水が残留し、処理後も半導体ウエーハ
表面の酸化が進行するため、ウエーハ表面に雰囲気中の
不純物が取り込まれることになる。例えば、従来行われ
ていたウエーハをフッ素樹脂等の搬送キャリアに入れて
洗浄処理する場合や、処理後の基板の乾燥法として、ス
ピンドライヤー等の物理乾燥法を用いた場合はその傾向
が顕著である。Next, in process 9, the semiconductor substrate is dried for about 6 minutes by the IPA vapor drying method. Normally after the ozone water treatment, even if the wafer surface is rinsed with pure water thereafter, the ozone water remains, and the oxidation of the semiconductor wafer surface proceeds even after the treatment, so that impurities in the atmosphere are taken into the wafer surface. Will be. For example, when a conventionally performed wafer is put into a carrier such as a fluorocarbon resin and washed, or when a physical drying method such as a spin drier is used as a method for drying a substrate after the processing, the tendency is remarkable. is there.
【００６２】本例のように、ＩＰＡ蒸気乾燥法を実施し
た場合は、前述したような残留オゾンガスの悪影響を完
全に除去することができる。When the IPA vapor drying method is performed as in this example, the adverse effect of the residual ozone gas as described above can be completely removed.
【００６３】前記具体例１及び具体例２の処理により、
半導体基板を洗浄した場合の、半導体基板表面の金属汚
染度の結果を図２に示す。By the processing of the specific examples 1 and 2,
FIG. 2 shows the result of the degree of metal contamination on the surface of the semiconductor substrate when the semiconductor substrate was cleaned.
【００６４】図２中（１）は、イニシャルとして、アル
カリ系洗浄液によるＳＣー１洗浄液中に所定量の金属を
添加し、汚染させ、前記汚染溶液によって半導体ウエー
ハを洗浄したものである。図２中（２）は、前記汚染溶
液で洗浄後、酸系洗浄であるＳＣー２洗浄及び純水リン
スを行った後の半導体ウエーハの表面汚染度を示す。図
２中（２）に示すように、汚染されたＳＣー１洗浄後、
ＳＣー２洗浄及び純水リンスを行った場合においても、
ベア基板に吸着しやすいＣｕや、自然酸化膜中での安定
度が高いＡｌは半導体基板表面からの除去率がきわめて
低く、ＳＣー１洗浄後のウエーハ表面とほとんど変らな
い状態となっている。In FIG. 2, (1) shows a case in which a predetermined amount of metal is added to an SC-1 cleaning solution using an alkaline cleaning solution to contaminate the semiconductor wafer, and the semiconductor wafer is cleaned with the contaminated solution. (2) in FIG. 2 shows the degree of surface contamination of the semiconductor wafer after the cleaning with the contaminated solution, the SC-2 cleaning as an acid cleaning, and the pure water rinsing. As shown in (2) in FIG. 2, after washing the contaminated SC-1,
Even when SC-2 cleaning and pure water rinsing are performed,
Cu, which is easily adsorbed on the bare substrate, and Al, which has high stability in the natural oxide film, have a very low removal rate from the semiconductor substrate surface, and are almost in the same state as the wafer surface after SC-1 cleaning.
【００６５】図２中（３）は、汚染溶液で洗浄した後、
具体例１に示す方法で洗浄を行ったものであり、図２中
（４）は、汚染溶液で洗浄した後、具体例２に示す方法
で洗浄を行ったものである。(3) in FIG. 2 shows that after cleaning with a contaminated solution,
The cleaning was performed by the method shown in the specific example 1, and (4) in FIG. 2 was obtained by cleaning by the method shown in the specific example 2 after cleaning with the contaminated solution.
【００６６】図２（３）及び（４）に示すように、本発
明の方法によれば、図２（１）に示す半導体基板表面の
金属汚染度を、本例の測定したすべての金属において、
千分の一から、一万分の一に低減することができる。As shown in FIGS. 2 (3) and (4), according to the method of the present invention, the metal contamination degree on the surface of the semiconductor substrate shown in FIG. ,
It can be reduced from one thousandth to one tenth.
【００６７】このように本発明の方法によれば、表面が
撥水性帯びている基板を別槽に搬送することなく、同一
槽において処理することができ、これにより、パーティ
クルや金属不純物等の付着を防止することができる。As described above, according to the method of the present invention, a substrate having a water-repellent surface can be processed in the same tank without being transported to a separate tank. Can be prevented.
【００６８】[0068]
【発明の効果】以上説明したように、本発明は、半導体
基板の製造プロセスにおける半導体基板の洗浄方法にお
いて、同一槽内で、一連の洗浄処理を行うものであっ
て、被洗浄物である半導体基板を、処理槽に導入した第
１の処理液に浸漬させる工程と、前記基板を第１の処理
液に浸漬させたまま、酸化性ガスを前記処理液に任意の
溶解度となるように溶解する工程と、前記酸化性ガスが
溶解された第２の処理液で、前記半導体基板を洗浄する
工程と、前記第２の処理液に、不活性ガス等の溶媒と反
応しないガスを導入して、前記第２の処理液に溶存して
いる酸化性ガスの一部又は全部を脱気させる工程と、前
記溶存酸化性ガスが脱気された第３の処理液で、再び、
前記半導体基板を洗浄する工程とを備えた半導体基板の
洗浄方法である。As described above, according to the present invention, in a method of cleaning a semiconductor substrate in a semiconductor substrate manufacturing process, a series of cleaning processes are performed in the same tank, and a semiconductor to be cleaned is manufactured. A step of immersing the substrate in a first processing solution introduced into a processing tank; and dissolving an oxidizing gas in the processing solution so as to have an arbitrary solubility while the substrate is immersed in the first processing solution. A step of cleaning the semiconductor substrate with a second processing liquid in which the oxidizing gas is dissolved, and introducing a gas that does not react with a solvent such as an inert gas into the second processing liquid, A step of degassing part or all of the oxidizing gas dissolved in the second processing liquid, and the third processing liquid in which the dissolved oxidizing gas is degassed;
Cleaning the semiconductor substrate.
【００６９】本発明は、第１の処理液に浸漬して、洗浄
処理を行った半導体基板を、前記第１の処理液中に保持
したまま、前記第１の処理液に酸化性ガスを導入して、
液質を変化させて第２の処理液とし、更に、前記第２の
処理液中の酸化ガスを脱気しつつ、不活性ガス等を導入
して、第３の処理液とするといったように、半導体基板
を空気中に晒すことなく、同一処理槽内で、一連の洗浄
処理工程が行われる方法であるため、半導体基板の表面
の汚染が可及的に低減される。According to the present invention, an oxidizing gas is introduced into the first processing solution while the semiconductor substrate, which has been subjected to the cleaning process by being immersed in the first processing solution, is held in the first processing solution. do it,
The liquid quality is changed to a second processing liquid, and an oxidizing gas in the second processing liquid is degassed while an inert gas or the like is introduced to form a third processing liquid. Since a series of cleaning processing steps are performed in the same processing tank without exposing the semiconductor substrate to the air, contamination of the surface of the semiconductor substrate is reduced as much as possible.
【００７０】また、同一処理液に所定ガスを導入して、
一連の洗浄処理工程を行うため、従来の複数の処理液を
供給する洗浄方法と比べ、所定ガスを溶解・脱気して液
質を変化させるため、ベースとなる同一処理液をリサイ
クル使用して、製造コストの低減を可能とする。Also, a predetermined gas is introduced into the same processing solution,
In order to perform a series of cleaning processing steps, compared to the conventional cleaning method that supplies a plurality of processing liquids, the same processing liquid as the base is recycled using the same processing liquid to dissolve and degas a predetermined gas and change the liquid quality. In addition, the manufacturing cost can be reduced.
【００７１】また、従来の方法で必要であった半導体基
板の搬送時間、又は処理液の排水・供給の時間を削減す
ることができ、効率的に洗浄処理を行うことができる。Further, it is possible to reduce the time for transporting the semiconductor substrate or the time for draining / supplying the processing liquid, which is required in the conventional method, so that the cleaning process can be performed efficiently.
【００７２】本願第２請求項に記載の発明は、前記請求
項１記載の半導体基板の洗浄方法において、前記第３の
処理液を排水した後、同一槽内で、前記洗浄処理後の半
導体基板を常温純水、酸化性ガス溶解水、３０℃以上の
温純水、常温純水の順でリンス処理を行う工程を備えた
半導体基板の洗浄方法である。According to a second aspect of the present invention, in the method for cleaning a semiconductor substrate according to the first aspect, after the third processing liquid is drained, the semiconductor substrate after the cleaning processing is placed in the same tank. This is a method for cleaning a semiconductor substrate, comprising a step of performing a rinsing treatment in the order of normal temperature pure water, oxidizing gas dissolved water, warm pure water of 30 ° C. or higher, and normal temperature pure water.
【００７３】このように、第１の処理液によって、例え
ば、表面撥水性状態のように、不純物を吸着しやすい状
態となっている半導体基板を、他槽へ搬送することな
く、同一槽において、複数の処理工程を行うことができ
るため、各工程の処理を容易とし、パーティクルや金属
不純物等の付着を防止して良品率を向上することが可能
となる。例えば、第１の処理液として、フッ化水素水溶
液に浸漬処理した半導体基板を常温純水に浸漬してリン
ス処理することにより、半導体基板表面に付着するフッ
素イオン等の残留イオンが除去され、酸化性ガスが溶存
する溶解水により、半導体基板表面を酸化して親水面と
することが可能となる。As described above, a semiconductor substrate in a state in which impurities are easily adsorbed, for example, in a surface water-repellent state by the first processing liquid, is not transferred to another tank, but is transferred to the same tank. Since a plurality of processing steps can be performed, the processing in each step can be facilitated, and adhesion of particles, metal impurities, and the like can be prevented, and the yield can be improved. For example, as a first treatment liquid, a semiconductor substrate immersed in an aqueous solution of hydrogen fluoride is rinsed by immersion in pure water at normal temperature, so that residual ions such as fluorine ions adhering to the surface of the semiconductor substrate are removed. The surface of the semiconductor substrate can be oxidized to a hydrophilic surface by the dissolved water in which the reactive gas is dissolved.
【００７４】次に、溶存ガスは、高温の溶媒には溶解し
にくいため、その後、温純水により基板表面を処理する
ことにより、常温の純水よりも効果的に残留している酸
化性ガスを半導体基板表面から除去することができ、半
導体基板表面の酸化の進行を抑制することが可能とな
る。Next, since the dissolved gas is hardly dissolved in the high-temperature solvent, the surface of the substrate is thereafter treated with hot pure water to remove the remaining oxidizing gas more effectively than pure water at normal temperature. It can be removed from the substrate surface, and the progress of oxidation on the semiconductor substrate surface can be suppressed.
【００７５】また、最後に常温純水に半導体基板を浸漬
することにより、半導体基板は室温に戻されるため、例
えば、ＩＰＡ蒸気乾燥を行う場合のように、半導体基板
を室温に回帰させる必要のある後工程が控えている場合
でも、影響を及ぼさない。Further, since the semiconductor substrate is finally returned to room temperature by immersing the semiconductor substrate in room temperature pure water, it is necessary to return the semiconductor substrate to room temperature, for example, when performing IPA vapor drying. Even if a post-process is scheduled, it has no effect.
【００７６】本願第３請求項に記載した発明は、半導体
基板の製造プロセスにおいて使用される半導体基板の洗
浄装置であって、被洗浄物である半導体基板を処理液に
浸漬させる処理槽と、前記基板を処理液に浸漬させたま
ま、前記処理槽に任意のガスを導入して第２又は第３の
複数の処理液とする機構を備えた半導体基板の洗浄装置
である。The invention described in claim 3 of the present application is an apparatus for cleaning a semiconductor substrate used in a process of manufacturing a semiconductor substrate, the apparatus comprising: a processing tank for immersing a semiconductor substrate to be cleaned in a processing liquid; A semiconductor substrate cleaning apparatus provided with a mechanism for introducing an arbitrary gas into the processing bath to convert the substrate into a second or third processing liquid while the substrate is immersed in the processing liquid.
【００７７】このように、同一処理槽内に、任意ガスを
導入して、第２又は第３の処理液とすることにより、複
数工程を同一の処理槽内で行うことができ、一の処理工
程の後、表面撥水状態となって汚染されやすい状態とな
っている半導体基板を他槽へ搬送することなく、同一処
理槽内で、次処理を行うことが可能となり、基板表面の
汚染を防止して、良好な製造処理プロセスが行われる。As described above, by introducing an arbitrary gas into the same processing tank to form the second or third processing liquid, a plurality of processes can be performed in the same processing tank. After the process, the next processing can be performed in the same processing tank without transporting the semiconductor substrate which is in a water-repellent state to be easily contaminated to another tank, thereby reducing the contamination on the substrate surface. In this way, a good manufacturing process is performed.
【００７８】また、第１の処理液に所定ガスを導入し
て、第２又は第３の処理液とするため、第１の処理液を
そのままリサイクル使用することができ、製造コストの
低減を可能とする。In addition, since a predetermined gas is introduced into the first processing liquid to make the second or third processing liquid, the first processing liquid can be recycled and used as it is, and the manufacturing cost can be reduced. And
【００７９】本願第４請求項に記載した発明は、前記請
求項２又は３記載の発明において、前記処理槽内に、常
温純水、酸化性ガス溶解水、３０℃以上の温純水、常温
純水等の各リンス処理液を、所定順序で導入する機構を
備えた半導体基板の洗浄装置である。According to a fourth aspect of the present invention, in the second or third aspect of the present invention, the processing tank contains room temperature pure water, oxidizing gas dissolved water, warm pure water having a temperature of 30 ° C. or more, and room temperature pure water. And a cleaning device for a semiconductor substrate having a mechanism for introducing each of the rinsing liquids in a predetermined order.
【００８０】このように、第１の処理液により洗浄処理
された半導体基板を、他槽へ搬送することなく、同一処
理槽内において、複数の洗浄処理工程が行われるため、
洗浄処理が容易となり、作業性が向上する。As described above, a plurality of cleaning processing steps are performed in the same processing tank without transporting the semiconductor substrate cleaned by the first processing liquid to another tank.
The cleaning process is facilitated, and the workability is improved.
【図１】本発明の具体例に係り、洗浄装置の概略構成を
示す図である。FIG. 1 is a diagram showing a schematic configuration of a cleaning apparatus according to a specific example of the present invention.
【図２】本発明の具体例に係り、（１）は、金属汚染さ
せた溶液を用いてＳＣー１洗浄を行ったウエーハ表面、
（２）は、金属汚染させた溶液を用いてのＳＣー１洗浄
後、ＳＣー２洗浄及び純水リンスを行ったウエーハ表
面、（３）は、金属汚染させた溶液を用いてのＳＣー１
洗浄を行った後、本発明の具体例１の処理を行ったウエ
ーハ表面、（４）は、金属汚染させた溶液を用いてのＳ
Ｃー１洗浄後、本発明の具体例２の処理を行ったウエー
ハ表面に存在する金属量を示す図である。FIG. 2 relates to a specific example of the present invention, (1) is a wafer surface which has been subjected to SC-1 cleaning using a metal-contaminated solution,
(2) SC-1 cleaning using a metal-contaminated solution, followed by SC-2 cleaning and pure water rinsing, and (3) SC-water using a metal-contaminated solution. 1
After the cleaning, the surface of the wafer subjected to the treatment of the first embodiment of the present invention, (4) shows the S surface using the metal-contaminated solution.
FIG. 9 is a view showing the amount of metal present on the surface of a wafer subjected to the treatment of Example 2 of the present invention after C-1 cleaning.
１ 洗浄装置 ２ 被処理物処理槽の内槽 ３ 被処理物処理槽の外槽 ４ 処理液循環ポンプ ５ 循環濾過フィルター ６ 気液混合モジュール ７ 気液分離器 ８ ガス経路切換え器 ９ 流量計 １０ 圧力計 １１ 圧力計 １２ エアバルブ １３ エアバルブ １４ エアバルブ １５ 循環ライン １６ 循環ライン １７ ガス導入ライン １８ ドレイン １９ 排出口 ２０ エアバルブ ２１ エアバルブ DESCRIPTION OF SYMBOLS 1 Washing apparatus 2 Inner tank of an object processing tank 3 Outer tank of an object processing tank 4 Processing liquid circulation pump 5 Circulation filtration filter 6 Gas-liquid mixing module 7 Gas-liquid separator 8 Gas path switching device 9 Flow meter 10 Pressure Total 11 Pressure gauge 12 Air valve 13 Air valve 14 Air valve 15 Circulation line 16 Circulation line 17 Gas introduction line 18 Drain 19 Discharge port 20 Air valve 21 Air valve
Claims (4)
体基板の洗浄方法において、同一槽内で、一連の洗浄処
理を行うものであって、 被洗浄物である半導体基板を、処理槽に導入した第１の
処理液に浸漬させる工程と、 前記基板を第１の処理液に浸漬させたまま、酸化性ガス
を前記処理液に任意の溶解度となるように溶解する工程
と、 前記酸化性ガスが溶解された第２の処理液で、前記半導
体基板を洗浄する工程と、 前記第２の処理液に、不活性ガス等の溶媒と反応しない
ガスを導入して、前記第２の処理液に溶存している酸化
性ガスの一部又は全部を脱気させる工程と、 前記溶存酸化性ガスが脱気された第３の処理液で、再
び、前記半導体基板を洗浄する工程とを備えたことを特
徴とする半導体基板の洗浄方法。In a method of cleaning a semiconductor substrate in a semiconductor substrate manufacturing process, a series of cleaning processes are performed in the same tank, and a semiconductor substrate to be cleaned is introduced into a processing tank. And a step of dissolving the oxidizing gas in the processing liquid so as to have an arbitrary solubility while the substrate is immersed in the first processing liquid; and Cleaning the semiconductor substrate with the second processing solution, introducing a gas that does not react with a solvent such as an inert gas into the second processing solution, and dissolving the gas in the second processing solution. Degassing a part or all of the oxidizing gas, and washing the semiconductor substrate again with the third processing liquid from which the dissolved oxidizing gas has been degassed. For cleaning semiconductor substrates.
内で、前記洗浄処理後の半導体基板を常温純水、酸化性
ガス溶解水、３０℃以上の温純水、常温純水の順でリン
ス処理を行う工程を備えたことを特徴とする前記請求項
１記載の半導体基板の洗浄方法。2. After draining the third treatment liquid, the semiconductor substrate after the cleaning treatment is removed in the same tank in the order of room temperature pure water, oxidizing gas dissolved water, 30 ° C. or higher warm pure water, and room temperature pure water. 2. The method for cleaning a semiconductor substrate according to claim 1, further comprising a step of performing a rinsing process.
される半導体基板の洗浄装置であって、 被洗浄物である半導体基板を処理液に浸漬させる処理槽
と、 前記基板を処理液に浸漬させたまま、前記処理槽に任意
のガスを導入して第２又は第３の複数の処理液とする機
構を備えたことを特徴とする半導体基板の洗浄装置。3. A semiconductor substrate cleaning apparatus used in a semiconductor substrate manufacturing process, comprising: a processing tank for immersing a semiconductor substrate to be cleaned in a processing liquid; and a processing tank in which the substrate is immersed in the processing liquid. And a mechanism for introducing an arbitrary gas into the processing tank to form a second or third plurality of processing liquids.
溶解水、３０℃以上の温純水、常温純水等の各リンス処
理液を、所定順序で導入する機構を備えたことを特徴と
する半導体基板の洗浄装置。4. A mechanism for introducing a rinsing treatment liquid such as room temperature pure water, oxidizing gas dissolved water, warm pure water having a temperature of 30 ° C. or higher, and room temperature pure water into the treatment tank in a predetermined order. For cleaning semiconductor substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10208299A JP2000040682A (en) | 1998-07-23 | 1998-07-23 | Cleaning method and device of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10208299A JP2000040682A (en) | 1998-07-23 | 1998-07-23 | Cleaning method and device of semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000040682A true JP2000040682A (en) | 2000-02-08 |
Family
ID=16553960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10208299A Pending JP2000040682A (en) | 1998-07-23 | 1998-07-23 | Cleaning method and device of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000040682A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006024890A (en) * | 2004-06-07 | 2006-01-26 | Dainippon Screen Mfg Co Ltd | Method, equipment, and system for processing substrate |
| JP2009160588A (en) * | 2006-10-12 | 2009-07-23 | Panasonic Electric Works Co Ltd | Cleaning device and cleaning method |
| CN102423871A (en) * | 2011-07-01 | 2012-04-25 | 上海华力微电子有限公司 | Recycling method of polishing solution |
| KR101373784B1 (en) * | 2011-02-25 | 2014-03-13 | 샤프 가부시키가이샤 | Substrate cleaning apparatus, substrate cleaning method, display manufacturing apparatus and display manufacturing method |
-
1998
- 1998-07-23 JP JP10208299A patent/JP2000040682A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006024890A (en) * | 2004-06-07 | 2006-01-26 | Dainippon Screen Mfg Co Ltd | Method, equipment, and system for processing substrate |
| JP4553781B2 (en) * | 2004-06-07 | 2010-09-29 | 大日本スクリーン製造株式会社 | Substrate processing method, substrate processing apparatus, and substrate processing system |
| JP2009160588A (en) * | 2006-10-12 | 2009-07-23 | Panasonic Electric Works Co Ltd | Cleaning device and cleaning method |
| JP2009160587A (en) * | 2006-10-12 | 2009-07-23 | Panasonic Electric Works Co Ltd | Cleaning device and cleaning method |
| KR101373784B1 (en) * | 2011-02-25 | 2014-03-13 | 샤프 가부시키가이샤 | Substrate cleaning apparatus, substrate cleaning method, display manufacturing apparatus and display manufacturing method |
| CN102423871A (en) * | 2011-07-01 | 2012-04-25 | 上海华力微电子有限公司 | Recycling method of polishing solution |
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