JPH04236773A - Electron beam-heated vacuum deposition device - Google Patents
Electron beam-heated vacuum deposition deviceInfo
- Publication number
- JPH04236773A JPH04236773A JP1485491A JP1485491A JPH04236773A JP H04236773 A JPH04236773 A JP H04236773A JP 1485491 A JP1485491 A JP 1485491A JP 1485491 A JP1485491 A JP 1485491A JP H04236773 A JPH04236773 A JP H04236773A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- evaporation
- substrate
- thin film
- evaporated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001771 vacuum deposition Methods 0.000 title claims abstract 4
- 238000010894 electron beam technology Methods 0.000 claims abstract description 22
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 230000005672 electromagnetic field Effects 0.000 claims abstract description 4
- 238000001704 evaporation Methods 0.000 claims description 24
- 230000008020 evaporation Effects 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000007738 vacuum evaporation Methods 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 abstract description 19
- 239000000463 material Substances 0.000 abstract description 9
- 230000008016 vaporization Effects 0.000 abstract 4
- 238000009834 vaporization Methods 0.000 abstract 4
- 239000011364 vaporized material Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、半導体素子の製造など
に用いられる電子ビーム加熱式真空蒸着装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam heating vacuum evaporation apparatus used for manufacturing semiconductor devices.
【０００２】0002
【従来技術】電子ビーム加熱式真空蒸着法は、高真空中
で電子ビームを蒸発物質に照射して加熱し、蒸発した原
子を対向して設置した基板などの被蒸着物上に付着させ
る方法である。この方法は、半導体製造プロセスにおい
て、半導体ウェハ上に電極などの薄膜を形成する場合な
どに用いられている。従来の電子ビーム加熱式真空蒸着
装置は、例えば図４に示す様な構造をしている。即ち、
真空容器１中に蒸発源として蒸発物質２を入れる坩堝３
、蒸発物質２を付着させる基板４、電子ビーム発生用の
フィラメント５が設けられている。フィラメント５から
の電子流６は磁石（図示されず）により収束偏向させら
れて、坩堝３中の蒸発物質２に集中する。電子流６によ
り加熱されて蒸発した蒸発物質２ａは、基板４上に凝集
し、薄膜を形成する。[Prior art] Electron beam heating vacuum evaporation is a method in which an electron beam is irradiated onto an evaporated substance in a high vacuum to heat it, and the evaporated atoms are deposited on an object to be evaporated, such as a substrate placed facing each other. be. This method is used when forming thin films such as electrodes on semiconductor wafers in semiconductor manufacturing processes. A conventional electron beam heating type vacuum evaporation apparatus has a structure as shown in FIG. 4, for example. That is,
A crucible 3 in which an evaporative substance 2 is placed as an evaporation source in a vacuum container 1
, a substrate 4 to which an evaporated substance 2 is attached, and a filament 5 for generating an electron beam. The electron stream 6 from the filament 5 is focused and deflected by a magnet (not shown) and concentrated on the evaporated material 2 in the crucible 3. The evaporated substance 2a heated and evaporated by the electron flow 6 condenses on the substrate 4 to form a thin film.
【０００３】0003
【発明が解決しようとする課題】しかしながら、従来の
電子ビーム加熱式真空蒸着装置には次のような問題点が
あった。即ち、電子流が坩堝中の蒸発物質に当たると、
反射電子が発生し、この反射電子が基板などの被蒸着物
に当たり、被蒸着物にダメージを与えたり、汚染したり
する。例えば、白金を蒸発物質とすると、入射した電子
の４０％程度が反射電子になり、残りの６０％が蒸発物
質の蒸発に利用される。白金の蒸発には１５００℃程度
の温度が必要になるため、反射電子のエネルギーも相当
な量になると考えられる。したがって、反射電子の数％
が被蒸着物に当たっても、被蒸着物が受ける損傷は大き
なものになる。However, the conventional electron beam heating type vacuum evaporation apparatus has the following problems. That is, when the electron flow hits the evaporated material in the crucible,
Backscattered electrons are generated, and the reflected electrons hit a deposition target such as a substrate, damaging or contaminating the deposition target. For example, when platinum is used as an evaporation material, about 40% of incident electrons become reflected electrons, and the remaining 60% is used for evaporation of the evaporation material. Since a temperature of about 1500° C. is required to evaporate platinum, it is thought that the energy of the reflected electrons will be considerable. Therefore, a few percent of backscattered electrons
Even if the object hits the object to be evaporated, the damage to the object will be significant.
【０００４】0004
【課題を解決するための手段と作用】本発明は上記問題
点を解決した電子ビーム加熱式真空蒸着装置を提供する
もので、真空容器中に電子ビーム発生用のフランメント
、蒸発物質を有する蒸発源、該蒸発物質からなる薄膜を
付着させる被蒸着物を設け、電子ビームを蒸発源に照射
し、被蒸着物上に薄膜を形成する電子ビーム加熱式真空
蒸着装置において、蒸発源からの反射電子を被蒸着物外
に誘導する電磁界を発生する電極が設けられていること
を特徴とするものである。上述のような電極を設けると
、蒸発源で反射し被蒸着物方向に向かう反射電子は、印
加電界によりその軌道が曲げられて、被蒸着物外に誘導
され、被蒸着物に到達することがない。従って、基板な
どの被蒸着物は反射電子による損傷を免れることができ
る。[Means and Effects for Solving the Problems] The present invention provides an electron beam heating type vacuum evaporation apparatus that solves the above-mentioned problems. In an electron beam heating type vacuum evaporation apparatus, which includes a source and a target to which a thin film of the evaporation substance is attached, and irradiates the evaporation source with an electron beam to form a thin film on the target, reflected electrons from the evaporation source are The device is characterized by being provided with an electrode that generates an electromagnetic field that induces the evaporation target to the outside of the object to be deposited. When the electrodes described above are provided, the backscattered electrons reflected from the evaporation source and directed toward the object to be evaporated have their trajectories bent by the applied electric field, are guided outside the object to be evaporated, and can reach the object to be evaporated. do not have. Therefore, an object to be deposited, such as a substrate, can be avoided from being damaged by reflected electrons.
【０００５】[0005]
【実施例】以下、図面に示した実施例に基づいて本発明
を詳細に説明する。図１は本発明にかかる電子ビーム加
熱式真空蒸着装置の一実施例の説明図である。図中、１
は真空容器、２は蒸発物質、３は坩堝、４は基板、５は
フィラメント、６は電子流であることは、従来例を示す
図４と同様である。本実施例では、蒸発源となる坩堝３
と基板４の間に２枚の金属板からなる電極７、８を設け
た。電極７、８間に電圧を印加し、電極７を陽電極、８
を陰電極とすると、蒸発源から基板４に向かう反射電子
９は電極７に引きつけられ、基板４に当たることはない
。反射電子９を誘導する電界を発生する電極の構造は上
記実施例に限定されることはなく、各種の構造が考えら
れる。例えば、図２に示すように、基板４を保持する基
板ホルダー１０を陰極にし、基板ホルダー１０に対して
直交するように配置した円筒状の電極１１を陽極にして
もい。あるいは、図３に示すように、中心に穴のあるド
ーナツ状の円盤からなる基板ホルダー１２を陰極にし、
中心の穴に棒状の電極１３を配置し、この電極１３を陽
極にしてもよい。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be explained in detail below based on embodiments shown in the drawings. FIG. 1 is an explanatory diagram of an embodiment of an electron beam heating type vacuum evaporation apparatus according to the present invention. In the figure, 1
2 is a vacuum container, 2 is an evaporated substance, 3 is a crucible, 4 is a substrate, 5 is a filament, and 6 is an electron flow, which is the same as in FIG. 4 showing the conventional example. In this example, crucible 3 serves as an evaporation source.
Electrodes 7 and 8 made of two metal plates were provided between the substrate 4 and the substrate 4. A voltage is applied between electrodes 7 and 8, so that electrode 7 is a positive electrode and 8 is a positive electrode.
When is used as a negative electrode, reflected electrons 9 directed from the evaporation source toward the substrate 4 are attracted to the electrode 7 and do not hit the substrate 4. The structure of the electrode that generates the electric field that induces the reflected electrons 9 is not limited to the above embodiment, and various structures can be considered. For example, as shown in FIG. 2, the substrate holder 10 holding the substrate 4 may be used as a cathode, and the cylindrical electrode 11 disposed perpendicular to the substrate holder 10 may be used as an anode. Alternatively, as shown in FIG. 3, a substrate holder 12 consisting of a donut-shaped disk with a hole in the center is used as a cathode, and
A rod-shaped electrode 13 may be placed in the center hole, and this electrode 13 may be used as an anode.
【０００６】[0006]
【発明の効果】以上説明したように本発明によれば、真
空容器中に電子ビーム発生用のフランメント、蒸発物質
を有する蒸発源、該蒸発物質からなる薄膜を付着させる
被蒸着物を設け、電子ビームを蒸発源に照射し、被蒸着
物上に薄膜を形成する電子ビーム加熱式真空蒸着装置に
おいて、蒸発源からの反射電子を被蒸着物外に誘導する
電磁界を発生する電極が設けられているため、反射電子
は基板などの被蒸着物に当たることはなく、被蒸着物の
損傷を防ぐことができるという優れた効果がある。As explained above, according to the present invention, a flanment for generating an electron beam, an evaporation source having an evaporation substance, and an evaporation object to which a thin film made of the evaporation substance is deposited are provided in a vacuum container. In an electron beam heating type vacuum evaporation apparatus that irradiates an evaporation source with an electron beam to form a thin film on the object to be evaporated, an electrode is provided that generates an electromagnetic field that guides reflected electrons from the evaporation source to the outside of the object to be evaporated. Therefore, the reflected electrons do not hit the deposition target such as the substrate, and there is an excellent effect that damage to the deposition target can be prevented.
【図１】本発明に係る電子ビーム加熱式真空蒸着装置の
一実施例の説明図である。FIG. 1 is an explanatory diagram of an embodiment of an electron beam heating type vacuum evaporation apparatus according to the present invention.
【図２】本発明に係る電子ビーム加熱式真空蒸着装置に
用いる電極構造の一実施例の説明図である。FIG. 2 is an explanatory diagram of an embodiment of an electrode structure used in the electron beam heating type vacuum evaporation apparatus according to the present invention.
【図３】本発明に係る電子ビーム加熱式真空蒸着装置に
用いる電極構造の他の実施例の説明図である。FIG. 3 is an explanatory diagram of another embodiment of the electrode structure used in the electron beam heating type vacuum evaporation apparatus according to the present invention.
【図４】従来の電子ビーム加熱式真空蒸着装置の説明図
である。FIG. 4 is an explanatory diagram of a conventional electron beam heating type vacuum evaporation apparatus.
１ 真空容器
２、２ａ 蒸発物質
３ 坩堝
４ 基板
５ フィラメント
６ 電子流７、８
、１１、１３ 電極1 Vacuum container 2, 2a Evaporated substance 3 Crucible 4 Substrate 5 Filament 6 Electron flow 7, 8
, 11, 13 electrode
Claims (1)
ンメント、蒸発物質を有する蒸発源、該蒸発物質からな
る薄膜を付着させる被蒸着物を設け、電子ビームを蒸発
源に照射し、被蒸着物上に薄膜を形成する電子ビーム加
熱式真空蒸着装置において、蒸発源からの反射電子を被
蒸着物外に誘導する電磁界を発生する電極が設けられて
いることを特徴とする電子ビーム加熱式真空蒸着装置。Claim 1: A flanment for generating an electron beam, an evaporation source having an evaporation substance, and an evaporation target to which a thin film made of the evaporation substance is attached are provided in a vacuum container, and an electron beam is irradiated onto the evaporation source to deposit the evaporation target. An electron beam heating type vacuum evaporation apparatus for forming a thin film on an object, characterized by being provided with an electrode that generates an electromagnetic field that guides reflected electrons from an evaporation source to the outside of the object to be evaporated. Vacuum deposition equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1485491A JPH04236773A (en) | 1991-01-14 | 1991-01-14 | Electron beam-heated vacuum deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1485491A JPH04236773A (en) | 1991-01-14 | 1991-01-14 | Electron beam-heated vacuum deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04236773A true JPH04236773A (en) | 1992-08-25 |
Family
ID=11872622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1485491A Pending JPH04236773A (en) | 1991-01-14 | 1991-01-14 | Electron beam-heated vacuum deposition device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04236773A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010106289A (en) * | 2008-10-28 | 2010-05-13 | Jeol Ltd | Vacuum vapor-deposition apparatus |
-
1991
- 1991-01-14 JP JP1485491A patent/JPH04236773A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010106289A (en) * | 2008-10-28 | 2010-05-13 | Jeol Ltd | Vacuum vapor-deposition apparatus |
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