JPH04213809A - Optical magnetic recording medium and manufacture thereof - Google Patents
Optical magnetic recording medium and manufacture thereofInfo
- Publication number
- JPH04213809A JPH04213809A JP3037919A JP3791991A JPH04213809A JP H04213809 A JPH04213809 A JP H04213809A JP 3037919 A JP3037919 A JP 3037919A JP 3791991 A JP3791991 A JP 3791991A JP H04213809 A JPH04213809 A JP H04213809A
- Authority
- JP
- Japan
- Prior art keywords
- recording layer
- torr
- magneto
- rare earth
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 230000003287 optical effect Effects 0.000 title claims 2
- 239000010410 layer Substances 0.000 claims abstract description 71
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000007789 gas Substances 0.000 claims abstract description 27
- 229910052786 argon Inorganic materials 0.000 claims abstract description 26
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 25
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 24
- 238000004544 sputter deposition Methods 0.000 claims abstract description 18
- 239000002344 surface layer Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 239000011241 protective layer Substances 0.000 claims abstract description 7
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 6
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 5
- 239000000956 alloy Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 11
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 230000007613 environmental effect Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910000687 transition metal group alloy Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical group 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- -1 Si3N4 Chemical class 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229910000982 rare earth metal group alloy Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、光を利用して情報を記
録、再生及び消去することができる光磁気記録媒体及び
その製造方法に関し、特に耐環境性が向上された光磁気
記録媒体及びその製造方法に関する。[Field of Industrial Application] The present invention relates to a magneto-optical recording medium capable of recording, reproducing and erasing information using light, and a method for manufacturing the same, and particularly to a magneto-optical recording medium with improved environmental resistance and a method for manufacturing the same. It relates to its manufacturing method.
【０００２】0002
【従来の技術】一般に、光磁気記録媒体の記録層として
利用されるものは、希土類−遷移金属非晶質磁性体（例
えば、Ｔｂ−Ｆｅ合金）にて薄膜を形成したものがある
。2. Description of the Related Art Generally, the recording layer of a magneto-optical recording medium is a thin film formed of rare earth-transition metal amorphous magnetic material (for example, Tb--Fe alloy).
【０００３】しかし乍ら、このような希土類−遷移金属
非晶質薄膜では希土類金属の容易に酸化される性質によ
り、安定した光磁気特性を保つことができない。However, such rare earth-transition metal amorphous thin films cannot maintain stable opto-magnetic properties due to the tendency of rare earth metals to be easily oxidized.
【０００４】即ち、Ｋｅｒｒ回転角、抗磁力、透過率、
反射率等の変化が激しくなり、Ｋｅｒｒヒステリシス曲
線（Ｈｙｓｔｅｒｅｓｉｓ Ｌｏｏｐ）及びＦａｒａ
ｄａｙヒステリシス曲線の角形成が悪化するため、記録
媒体の耐環境性が減少されることになり、記録されたデ
ータを長時間保管することができる記録媒体の実用化に
は問題点を残している。That is, Kerr rotation angle, coercive force, transmittance,
Changes in reflectance etc. become drastic, and the Kerr hysteresis curve (Hysteresis Loop) and Fara
As the angular formation of the day hysteresis curve deteriorates, the environmental resistance of the recording medium is reduced, and there remains a problem in the practical application of a recording medium that can store recorded data for a long time. .
【０００５】従来においては、前述の如き耐環境性の減
少を解決するために、記録層を構成する物質にＰｔ、Ｔ
ｉ、Ａｌ、Ｃｒ等の元素を添加するか、又は記録層の両
面にＳｉ３Ｎ４、ＡｌＮ等の窒化物、ＳｉＯ２、Ａｌ２
Ｏ３等の酸化物及びＺｎＳ等の硫化物等を用いて真空槽
中で連続スパッタリングまたは蒸着方法で保護層を形成
させたものがある。Conventionally, in order to solve the above-mentioned decrease in environmental resistance, Pt and T are added to the materials constituting the recording layer.
Adding elements such as i, Al, Cr, etc., or adding nitrides such as Si3N4, AlN, SiO2, Al2 to both sides of the recording layer.
There is a method in which a protective layer is formed by continuous sputtering or vapor deposition in a vacuum chamber using an oxide such as O3 or a sulfide such as ZnS.
【０００６】[0006]
【発明が解決しようとする課題】しかし乍ら、上記のよ
うな第３の元素を記録層に添加した場合には、記録層固
有の磁気光学効果が減少される傾向があり、保護層を形
成させた場合には実用上満足できるほどに耐環境性及び
耐酸化性を得ることができないと云う短所を有していた
。[Problems to be Solved by the Invention] However, when the above-mentioned third element is added to the recording layer, the magneto-optical effect inherent to the recording layer tends to be reduced, and it is difficult to form a protective layer. In this case, it has the disadvantage that environmental resistance and oxidation resistance that are practically satisfactory cannot be obtained.
【０００７】[0007]
【課題を解決するための手段】本発明は上述の如きの問
題点を解決するために、光磁気記録媒体の記録層として
、Ｇｄ、Ｔｂ、Ｄｙ、Ｎｄ等の含まれた希土類金属及び
Ｆｅ、Ｃｏ等の含まれた遷移金属の合金から構成される
磁性薄膜を形成するに際して、それぞれの構成元素別造
成を記録層の深さに従って異ならせることにより、耐環
境性を向上させた光磁気記録媒体を提供しようとするも
のである。[Means for Solving the Problems] In order to solve the above-mentioned problems, the present invention provides a recording layer of a magneto-optical recording medium containing rare earth metals such as Gd, Tb, Dy, Nd, etc. A magneto-optical recording medium with improved environmental resistance by varying the formation of each constituent element according to the depth of the recording layer when forming a magnetic thin film composed of an alloy of transition metals containing Co, etc. This is what we are trying to provide.
【０００８】特に本発明は、アルミニウムの表面に人為
的に酸化アルミニウムを形成させてそれ以上に酸化反応
がアルミニウムの表面で生じないようにすれば、耐環境
性が向上されると云う原理に従うものである。In particular, the present invention follows the principle that environmental resistance can be improved by artificially forming aluminum oxide on the surface of aluminum to prevent further oxidation reactions from occurring on the surface of aluminum. It is.
【０００９】即ち、酸素との反応性が極めて良好な希土
類金属の濃度を、光磁気記録媒体の両側表面又は両側表
面層で、記録層の中心部の濃度より、Ｏ．２ａｔ％〜１
０ａｔ％程度人為的に増加させ、外部から侵入した酸素
と希土類金属との反応が記録層の両側表面又は両側表面
層に集中されるようにする。That is, the concentration of the rare earth metal, which has extremely good reactivity with oxygen, on both surfaces or both surface layers of the magneto-optical recording medium is determined to be 0.05 oz. from the concentration at the center of the recording layer. 2at%~1
It is artificially increased to about 0 at% so that the reaction between the oxygen introduced from the outside and the rare earth metal is concentrated on both surfaces of the recording layer or both surface layers.
【００１０】このような構成により、記録層の両側表面
又は両側表面層からの酸化反応が当該記録層の中心部へ
拡散されるのを抑制することになり、光磁気記録媒体の
耐環境性を向上せしめることができる。[0010] Such a structure suppresses the oxidation reaction from both surfaces of the recording layer or both surface layers from diffusing into the center of the recording layer, thereby improving the environmental resistance of the magneto-optical recording medium. It can be improved.
【００１１】[0011]
【実施例】以下、本発明による光磁気記録媒体の構成及
びその製造方法を添付された図面を用いて詳細に説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of a magneto-optical recording medium and its manufacturing method according to the present invention will be explained in detail below with reference to the attached drawings.
【００１２】図１に示すスパッタリング装置を利用して
光磁気記録媒体を製造するに際して、先ず真空槽（又は
反応室）７内部の圧力を１０−７トル（Ｔｏｒｒ）水準
まで排気させた後、真空槽７内部にアルゴンガスを流入
し、内部圧力を１０−２〜１０−３トル水準に保持させ
る。When manufacturing a magneto-optical recording medium using the sputtering apparatus shown in FIG. Argon gas is introduced into the tank 7 to maintain the internal pressure at a level of 10-2 to 10-3 Torr.
【００１３】Ｓｉ３Ｎ４ターゲット２に連結された外部
交流電源５を稼働させ、Ｓｉ３Ｎ４ターゲット２のスパ
ッタリングを行ない一次保護層を形成させて、外部交流
電源５を遮断する。その後、流入されるアルゴンガス量
を調節して内部圧力を９×１０−３トルに合わせ、希土
類−遷移金属合金にて構成されたターゲット１に連結さ
れた外部直流電源６を稼働させて記録層形成のためのス
パッタリングを下述の如くに行なう。The external AC power source 5 connected to the Si3N4 target 2 is activated to sputter the Si3N4 target 2 to form a primary protective layer, and then the external AC power source 5 is shut off. Thereafter, the amount of argon gas inflow is adjusted to adjust the internal pressure to 9 x 10-3 Torr, and the external DC power supply 6 connected to the target 1 made of rare earth-transition metal alloy is operated to create a recording layer. Sputtering for formation is performed as described below.
【００１４】成膜せしめようとする記録層の厚さが８０
０オングストロームであり、成膜速度が１００オングス
トローム／ｍｉｎ．であれば、このスパッタリングに所
要される総時間は８分である。The thickness of the recording layer to be deposited is 80 mm.
0 angstrom, and the deposition rate was 100 angstrom/min. Then, the total time required for this sputtering is 8 minutes.
【００１５】ここでのスパッタリング方法において、初
期の１分間はアルゴンガス圧力を９×１０−３トルから
１×１０−３トルまで徐々に低下させつつスパッタリン
グを行ない、その後の６分間はアルゴンガス圧力を１×
１０−３トルに保持しながらスパッタリングを行ない、
最後の１分間はアルゴンガス圧力を１×１０ー３トルか
ら９×１０−３トルまで徐々に増加させながらスパッタ
リングを行なう。In the sputtering method here, sputtering is performed while gradually decreasing the argon gas pressure from 9 x 10-3 Torr to 1 x 10-3 Torr for the initial 1 minute, and the argon gas pressure is lowered for the next 6 minutes. 1×
Perform sputtering while maintaining at 10-3 torr,
During the last minute, sputtering is performed while gradually increasing the argon gas pressure from 1.times.10@-3 Torr to 9.times.10@-3 Torr.
【００１６】上述の如き方法により、図２の記録層の希
土類金属組成対スパッタリング時間の関係を表わすグラ
フに示すように、希土類金属の組成が記録層の深さ方向
１３の両端部のそれぞれに行く程に増加されるように又
は記録層における希土類金属の組成がその両側表面のそ
れぞれに行くに従い増加されるように成膜することがで
きる。ここで、記録層の両側表面層における希土類金属
の濃度が、当該記録層中心部の濃度よりも、０．２〜１
０ａｔ％程度より高くなるように形成することが好まし
く、また、希土類金属の濃度の高い両端表層のそれぞれ
の厚さは記録層全体の厚さのＯ．Ｏ２〜０．５倍の範囲
になるようにすることが好ましい。By the method described above, the composition of the rare earth metal is distributed at both ends of the recording layer in the depth direction 13, as shown in the graph of FIG. 2 showing the relationship between the rare earth metal composition of the recording layer and the sputtering time. The composition of the rare earth metal in the recording layer can be formed so as to increase as the recording layer approaches each side of the recording layer. Here, the concentration of the rare earth metal in the surface layers on both sides of the recording layer is 0.2 to 1% lower than the concentration in the center of the recording layer.
It is preferable to form the layer so that the concentration thereof is higher than about 0 at%, and the thickness of each end surface layer having a high rare earth metal concentration is O. It is preferable that the amount is in the range of O2 to 0.5 times.
【００１７】既存の光磁気記録媒体の記録層は図３に示
されたものとなっており、図２のものとは異なり、記録
層深さ１４の全範囲に亙って希土類金属の組成分布が均
一になっている。The recording layer of the existing magneto-optical recording medium is as shown in FIG. 3, and unlike the one in FIG. are uniform.
【００１８】以上のようにして上記記録層の成膜が終了
されると、最初の方法と同様にＳｉ３Ｎ４ターゲット２
を再度利用して２次保護膜を形成することにより、本発
明の光磁気記録媒体が完成される。After the formation of the recording layer is completed as described above, the Si3N4 target 2 is deposited as in the first method.
The magneto-optical recording medium of the present invention is completed by forming a secondary protective film again.
【００１９】一方、希土類金属及び遷移金属の合金から
構成されたターゲット１から離脱されたそれぞれの希土
類金属原子及び遷移金属原子は当該ターゲット１から全
ての方向に動く。On the other hand, the respective rare earth metal atoms and transition metal atoms separated from the target 1 made of an alloy of rare earth metals and transition metals move in all directions from the target 1.
【００２０】そして、それぞれの原子はターゲット１の
上方に固定されている基板３に到達されるまでアルゴン
ガスと衝突して散乱されるようになる。Each atom collides with the argon gas and is scattered until it reaches the substrate 3 fixed above the target 1.
【００２１】下記の関係式で、散乱角度θは衝突原子の
原子量（ｍ１、ｍ２）に反比例することが判断できる。
θ＝ｔａｎ−１（ｍ１／ｍ２）From the following relational expression, it can be determined that the scattering angle θ is inversely proportional to the atomic mass (m1, m2) of the colliding atoms. θ=tan-1 (m1/m2)
【００２２】例えば、Ａｒ（ｍ１＝３９．９ｇ／ｍｏｌ
）にＴｂ（ｍ２＝１５８．９ｇ／ｍｏｌ）が衝突すると
、上記関係式において散乱角度θは１４．１°となり、
ｍ２がＦｅ（５５．８ｇ／ｍｏｌ）の場合、散乱角θは
３５．６°となる。For example, Ar (m1=39.9g/mol
) collides with Tb (m2=158.9g/mol), the scattering angle θ becomes 14.1° in the above relational expression,
When m2 is Fe (55.8 g/mol), the scattering angle θ is 35.6°.
【００２３】更に、真空槽７内にアルゴンガス量が増加
される程に放出されるそれぞれの原子等とアルゴンガス
が衝突する確率は大となる。Furthermore, as the amount of argon gas increases in the vacuum chamber 7, the probability that the argon gas will collide with each released atom increases.
【００２４】従って、軽い金属であればある程、基板３
に到達する確率が小さくなる。Therefore, the lighter the metal, the more the substrate 3
The probability of reaching becomes smaller.
【００２５】その具体的な結果を図４に示す。The specific results are shown in FIG.
【００２６】図４に示すように、アルゴンガス圧力を１
×１０−３トルとしてスパッタリングを行なった薄膜内
の希土類金属（例：Ｔｂ）の組成は２０．５ａｔ％であ
るのに対し、アルゴンガス圧力を９×１０−３トルに高
めてスパッタリングを行なった薄膜内の希土類金属の組
成は２３ａｔ％となった。As shown in FIG. 4, the argon gas pressure is
The composition of the rare earth metal (e.g. Tb) in the thin film sputtered at ×10-3 Torr was 20.5 at%, whereas sputtering was performed by increasing the argon gas pressure to 9 ×10-3 Torr. The composition of the rare earth metal in the thin film was 23 at%.
【００２７】従って、アルゴンガス圧力を調節して記録
層中の希土類金属の組成を約２．５ａｔ％程度に増加せ
しめることができることが確かめられる。Therefore, it is confirmed that the composition of rare earth metal in the recording layer can be increased to about 2.5 at % by adjusting the argon gas pressure.
【００２８】尚、図１中の符号３は基板、４は基板３を
固定できる基板固定装置、８はターゲット１とターゲッ
ト２とを隔離する隔離板、９は排気口、１０は真空バル
ブ、１１はアルゴンガス流入口、１２はアルゴンガスバ
ルブ、をそれぞれ示す。In FIG. 1, reference numeral 3 denotes a substrate, 4 a substrate fixing device capable of fixing the substrate 3, 8 a separator for separating the targets 1 and 2, 9 an exhaust port, 10 a vacuum valve, and 11 indicates an argon gas inlet, and 12 indicates an argon gas valve.
【００２９】以下、具体的な実施例に沿って本発明によ
り製造された光磁気記録媒体の持つ特徴を説明する。The features of the magneto-optical recording medium manufactured according to the present invention will be explained below with reference to specific examples.
【００３０】（実施例１）
透明ポリカーボネート円形基板３をスパッタリング装置
の真空槽７内に装着し、真空槽７内部の圧力が２×１０
−７トルになるまで排気口９を通して排気させた後、内
部圧力を５×１０−３トルに保持できるようにアルゴン
ガス流入口１１を通してアルゴンガスを流入させる。(Example 1) A transparent polycarbonate circular substrate 3 was placed in a vacuum chamber 7 of a sputtering device, and the pressure inside the vacuum chamber 7 was 2×10
After evacuating through the exhaust port 9 until the pressure reaches -7 Torr, argon gas is introduced through the argon gas inlet 11 so as to maintain the internal pressure at 5.times.10@-3 Torr.
【００３１】外部交流電源５から１ＫＷの電力をＳｉ３
Ｎ４ターゲット２に供給し、スパッタリングを行なうと
Ｓｉ３Ｎ４にて構成された厚さ８００オングストローム
の一次保護膜が形成される。[0031] 1KW of power is supplied from the external AC power supply 5 to the Si3
When N4 is supplied to the target 2 and sputtering is performed, a primary protective film made of Si3N4 and having a thickness of 800 angstroms is formed.
【００３２】この一次保護膜が形成された後に外部交流
電源５を遮断し、内部圧力が９×１０−３トルを保持す
るようにアルゴンガスの流入量を増加させた後、ＴｂＦ
ｅＣｏ合金にて構成されたターゲット１に連結された外
部直流電源６から１ＫＷの電力を当該ターゲット１に供
給し、内部圧力を下述の如く３段階に適宜調節しながら
最終的には厚さ８００オングストロームの垂直磁気異方
性を有する記録層を形成する。After this primary protective film is formed, the external AC power source 5 is cut off, and the amount of argon gas inflow is increased so that the internal pressure is maintained at 9×10 −3 Torr.
A power of 1 KW is supplied to the target 1 from an external DC power source 6 connected to the target 1 made of eCo alloy, and the internal pressure is appropriately adjusted in three stages as described below, and the final thickness is 800 mm. A recording layer having angstrom perpendicular magnetic anisotropy is formed.
【００３３】即ち、上記記録層形成の際に、アルゴンガ
ス流入量を徐々に減少させて内部圧力が９×１０−３ト
ルから１×１０−３トルとなるようにしながら２００オ
ングストロームを塗布し、内部圧力を１×１０−３トル
に一定に保持せしめた状態で４００オングストロームを
塗布し、残余２００オングストロームの塗布の際にはア
ルゴンガス量を徐々に増加させながら内部圧力を１×１
０−３トルから９×１０−３トルになるように調節する
。That is, when forming the recording layer, a thickness of 200 angstroms was coated while gradually reducing the amount of argon gas inflow so that the internal pressure was from 9 x 10-3 Torr to 1 x 10-3 Torr. 400 angstroms were applied while keeping the internal pressure constant at 1 x 10-3 torr, and when coating the remaining 200 angstroms, the internal pressure was increased to 1 x 1 while gradually increasing the amount of argon gas.
Adjust from 0-3 Torr to 9 x 10-3 Torr.
【００３４】この結果、希土類金属の濃度がより高い、
記録層の両側表面層のそれぞれの厚さは、記録層全体の
厚さの０．２５倍となる。[0034] As a result, the concentration of rare earth metals is higher.
The thickness of each of the surface layers on both sides of the recording layer is 0.25 times the thickness of the entire recording layer.
【００３５】このようにして記録層が形成された後、一
次保護膜の形成と同一方法で二次保護膜を形成して記録
媒体が製造される。After the recording layer is formed in this manner, a secondary protective film is formed using the same method as the primary protective film to produce a recording medium.
【００３６】（実施例２）
実施例１と同一方法で１次、２次保護膜を形成する。記
録層の形成においては、実施例１と同一方法でアルゴン
ガス流入量を上記３段階に亙って変化させるのであるが
、形成される記録層の厚さはそれぞれ１００オングスト
ロームとなるようにする。(Example 2) Primary and secondary protective films were formed in the same manner as in Example 1. In forming the recording layer, the amount of argon gas inflow is varied in the three steps described above in the same manner as in Example 1, but the thickness of the formed recording layer is set to 100 angstroms each.
【００３７】この場合、希土類金属の濃度がより高い、
記録層の両側表面層のそれぞれの厚さは、記録層全体の
厚さの０．１２５倍となる。In this case, the concentration of rare earth metal is higher,
The thickness of each of the surface layers on both sides of the recording layer is 0.125 times the thickness of the entire recording layer.
【００３８】（実施例３） 実施例１と同一方法で一次、二次保護膜を形成する。(Example 3) The primary and secondary protective films are formed in the same manner as in Example 1.
【００３９】記録層の形成においては、実施例１と同一
方法でアルゴンガス流入量を上記３段階に亙って変化さ
せるのであるが、形成される記録層の厚さはそれぞれ５
０オングストロームになるようにする。In forming the recording layer, the amount of argon gas inflow is changed in the above three steps using the same method as in Example 1, but the thickness of the formed recording layer is 5.
The thickness should be 0 angstroms.
【００４０】この場合、希土類金属の濃度がより高い、
記録層の両側表面層のそれぞれの厚さは、記録層全体の
厚さの０．６２５倍になる。In this case, the concentration of rare earth metal is higher,
The thickness of each of the surface layers on both sides of the recording layer is 0.625 times the thickness of the entire recording layer.
【００４１】（実施例４） 実施例１と同一方法で記録層を形成する。(Example 4) A recording layer is formed by the same method as in Example 1.
【００４２】（比較例１）実施例１と同一方法で一次、
二次保護膜を形成する。(Comparative Example 1) In the same manner as in Example 1, primary
Forms a secondary protective film.
【００４３】記録層の形成においてアルゴンガス圧力を
１×１０−３トルに一定に保持させつつ、厚さ８００オ
ングストロームの記録層を形成し、通常の光磁気記録媒
体を製造する。In forming the recording layer, a recording layer having a thickness of 800 angstroms is formed while maintaining the argon gas pressure at a constant level of 1×10 −3 torr to produce a normal magneto-optical recording medium.
【００４４】（比較例２） 比較例１と同一方法で記録層だけを形成する。(Comparative Example 2) Only the recording layer is formed by the same method as in Comparative Example 1.
【００４５】上記実施例１〜４及び比較例１、２に従っ
て製造された各光磁気記録媒体の耐環境性を測定するた
めに、温度８０℃、相対湿度８５％条件の恒温恒湿槽に
光磁気記録媒体を所定時間放置した後、磁気光学測定装
置及び振動式磁力測定装置を用いて放置時間の経過に従
うＫｅｒｒ回転角及び飽和磁化量の変化率値を測定した
。In order to measure the environmental resistance of each of the magneto-optical recording media manufactured according to Examples 1 to 4 and Comparative Examples 1 and 2, light was placed in a constant temperature and humidity chamber at a temperature of 80° C. and a relative humidity of 85%. After the magnetic recording medium was left to stand for a predetermined period of time, the Kerr rotation angle and the rate of change in the amount of saturation magnetization were measured as the standing time elapsed using a magneto-optical measuring device and a vibrating magnetic force measuring device.
【００４６】その結果を図５及び図６に示した。The results are shown in FIGS. 5 and 6.
【００４７】ここでの変化率値は［放置後の物性測定値
／初期物性測定値］の比として定義される。The rate of change value here is defined as the ratio of [physical property measurement value after standing/initial physical property measurement value].
【００４８】上記実験の結果、実施例１〜３において製
造された光磁気記録媒体のＫｅｒｒ回転角変化率（θｋ
（ｔ）／θｋ（０））及び飽和磁化量変化率（ｍｓ（ｔ
）／ｍｓ（０））は、所定放置時間経過しても概ね一定
であることを確かめることができる。As a result of the above experiment, the Kerr rotation angle change rate (θk
(t)/θk(0)) and saturation magnetization change rate (ms(t
)/ms(0)) remains approximately constant even after a predetermined standing time has elapsed.
【００４９】反面、通常の光磁気記録媒体（比較例１）
では放置時間経過に従う変化率が甚だしかった。On the other hand, a normal magneto-optical recording medium (comparative example 1)
In this case, the rate of change as the time elapsed was significant.
【００５０】従って、本発明による光磁気記録媒体の耐
環境性が向上されていることを確認することができる。Therefore, it can be confirmed that the magneto-optical recording medium according to the present invention has improved environmental resistance.
【００５１】[0051]
【発明の効果】以上のようにして、記録層の両側表面又
は両側表面層における酸化反応が当該記録層の中心部へ
拡散されるのを抑制することにより、光磁気記録媒体の
耐環境性を向上せしめることができる。Effects of the Invention As described above, by suppressing the oxidation reaction on both surfaces or both surface layers of the recording layer from being diffused to the center of the recording layer, the environmental resistance of the magneto-optical recording medium can be improved. It can be improved.
【００５２】更に、記録層の両側表面又は両側表面層に
おける希土類金属の組成が光磁気記録媒体の記録層構成
に必要な標準調整よりも高いため、表層が酸化される際
にも希土類金属の調整を標準調整近傍で保持可能となる
ため、磁気光学効果の損失を除去し、安定した光磁気記
録媒体の実用化が可能となる。Furthermore, since the composition of the rare earth metal in both surfaces or both surface layers of the recording layer is higher than the standard adjustment required for the recording layer structure of a magneto-optical recording medium, the adjustment of the rare earth metal is difficult even when the surface layer is oxidized. can be maintained near the standard adjustment, thereby eliminating the loss of the magneto-optic effect and making it possible to put a stable magneto-optical recording medium into practical use.
【図１】本発明の光磁気記録媒体を製造するスパッタリ
ング装置の概略図である。FIG. 1 is a schematic diagram of a sputtering apparatus for manufacturing a magneto-optical recording medium of the present invention.
【図２】本発明の光磁気記録媒体における記録層の希土
類金属組成とスパッタリング時間（又は記録層深さ）と
の関係を表すグラフである。FIG. 2 is a graph showing the relationship between the rare earth metal composition of the recording layer and the sputtering time (or recording layer depth) in the magneto-optical recording medium of the present invention.
【図３】従来の光磁気記録媒体における記録層の希土類
金属組成とスパッタリング時間（又は記録層深さ）との
関係を表すグラフである。FIG. 3 is a graph showing the relationship between the rare earth metal composition of the recording layer and the sputtering time (or recording layer depth) in a conventional magneto-optical recording medium.
【図４】本発明の光磁気記録媒体の成膜の際、記録層中
におけるアルゴンガス圧力（Ｔｏｒｒ）の値に応じての
希土類金属の組成変化を示すグラフである。FIG. 4 is a graph showing changes in rare earth metal composition according to the value of argon gas pressure (Torr) in the recording layer during film formation of the magneto-optical recording medium of the present invention.
【図５】本発明の実施例及び比較例に従って製造された
各光磁気記録媒体に関しての、放置時間（ｈｒｓ）とＫ
ｅｒｒ回転角変化率（θｋ（ｔ）／θｋ（０））との関
係を示すグラフである。FIG. 5: Standing time (hrs) and K for each magneto-optical recording medium manufactured according to the examples and comparative examples of the present invention.
It is a graph showing the relationship between err and rotation angle change rate (θk(t)/θk(0)).
【図６】本発明の実施例及び比較例に従って製造された
各光磁気記録媒体に関しての、放置時間（ｈｒｓ）と飽
和磁化量変化率（ｍｓ（ｔ）／ｍｓ（０））との関係を
示すグラフである。FIG. 6 shows the relationship between the standing time (hrs) and the saturation magnetization change rate (ms(t)/ms(0)) for each magneto-optical recording medium manufactured according to the examples and comparative examples of the present invention. This is a graph showing.
１ ＴｂＦｅＣｏターゲット ２ Ｓｉ３Ｎ４ターゲット ３ 透明基板 ４ 基板固定装置 ５ 外部交流電源 ６ 外部直流電源 ７ 真空槽 ８ 隔離板 ９ 排気口 １０ 真空バルブ １１ アルゴンガス流入口 １２ ガスバルブ １３ 記録層厚さ １４ 記録層厚さ 1 TbFeCo target 2 Si3N4 target 3 Transparent substrate 4 Board fixing device 5 External AC power supply 6 External DC power supply 7 Vacuum chamber 8 Separation plate 9 Exhaust port 10 Vacuum valve 11 Argon gas inlet 12 Gas valve 13 Recording layer thickness 14 Recording layer thickness
Claims (4)
される光磁気記録媒体において、前記記録層は、アルゴ
ンガスの流入による反応室内の圧力を９×１０−３トル
から１×１０−３トルへ徐々に減少させる状態、１×１
０−３トルに一定に保持させる状態、更に、１×１０−
３トルから９×１０−３トルへ徐々に増加させる状態の
それぞれで、希土類−遷移金属の合金よりなるターゲッ
トを用いてスパッタリングを行なうことによって前記反
応室内において形成されており、前記記録層の両側表面
層における希土類金属の濃度が、当該記録層中心部の濃
度よりも、０．２〜１０ａｔ％程度より高くなるように
形成されていることを特徴とする光磁気記録媒体。1. A magneto-optical recording medium composed of a transparent substrate, a protective layer, and a recording layer, wherein the recording layer is configured to reduce the pressure within a reaction chamber due to the inflow of argon gas from 9×10 −3 Torr to 1×10 −3 Torr. state of gradual reduction to tor, 1×1
The condition is kept constant at 0-3 Torr, and further, 1×10-
The recording layer is formed in the reaction chamber by sputtering using a target made of a rare earth-transition metal alloy in each state gradually increasing from 3 Torr to 9×10 −3 Torr, and is formed in the reaction chamber on both sides of the recording layer. 1. A magneto-optical recording medium, characterized in that the concentration of a rare earth metal in the surface layer is higher than the concentration in the center of the recording layer by about 0.2 to 10 at%.
ぞれは、当該記録層全体の厚みの０．０２〜０．５倍の
範囲内にあることを特徴する請求項１に記載の光磁気記
録媒体。2. The magneto-optical device according to claim 1, wherein each of the thicknesses of the surface layers on both sides of the recording layer is within a range of 0.02 to 0.5 times the thickness of the entire recording layer. recoding media.
される光磁気記録媒体の製造方法において、前記記録層
を、アルゴンガスの流入による反応室内の圧力を９×１
０−３トルから１×１０−３トルへ徐々に減少させる状
態、１×１０−３トルに一定に保持させる状態、更に、
１×１０−３トルから９×１０−３トルへ徐々に増加さ
せる状態のそれぞれで、希土類−遷移金属の合金よりな
るターゲットを用いてスパッタリングを行なうことによ
って、前記記録層の両側表面層における希土類金属の濃
度が、当該記録層中心の濃度よりも、０．２〜１０ａｔ
％程度より高くなるように前記反応室内において形成す
ることを特徴とする光磁気記録媒体の製造方法。3. A method for manufacturing a magneto-optical recording medium comprising a transparent substrate, a protective layer, and a recording layer, wherein the recording layer is heated to a pressure of 9×1 in a reaction chamber due to the inflow of argon gas.
A state of gradually decreasing from 0-3 Torr to 1 x 10-3 Torr, a state of keeping it constant at 1 x 10-3 Torr, and further,
By performing sputtering using a target made of a rare earth-transition metal alloy while gradually increasing from 1 x 10-3 Torr to 9 x 10-3 Torr, rare earth metals in both surface layers of the recording layer are sputtered. The metal concentration is 0.2 to 10 at higher than the concentration at the center of the recording layer.
% or more in the reaction chamber.
ぞれは、当該記録層全体の厚みの０．０２〜０．５倍の
範囲内にあることを特徴とする請求項３に記載の光磁気
記録媒体の製造方法。4. The optical disc according to claim 3, wherein each of the thicknesses of the surface layers on both sides of the recording layer is within a range of 0.02 to 0.5 times the thickness of the entire recording layer. A method for manufacturing a magnetic recording medium.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR90-1509 | 1990-02-08 | ||
| KR1019900001509A KR930003182B1 (en) | 1990-02-08 | 1990-02-08 | Optical recording material and manufcturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04213809A true JPH04213809A (en) | 1992-08-04 |
Family
ID=19295900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3037919A Pending JPH04213809A (en) | 1990-02-08 | 1991-02-07 | Optical magnetic recording medium and manufacture thereof |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH04213809A (en) |
| KR (1) | KR930003182B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002109729A (en) * | 2000-09-27 | 2002-04-12 | Anelva Corp | Method and apparatus for producing magnetic film and method for manufacturing magnetic recording disk |
-
1990
- 1990-02-08 KR KR1019900001509A patent/KR930003182B1/en not_active IP Right Cessation
-
1991
- 1991-02-07 JP JP3037919A patent/JPH04213809A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002109729A (en) * | 2000-09-27 | 2002-04-12 | Anelva Corp | Method and apparatus for producing magnetic film and method for manufacturing magnetic recording disk |
Also Published As
| Publication number | Publication date |
|---|---|
| KR930003182B1 (en) | 1993-04-23 |
| KR910015977A (en) | 1991-09-30 |
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