JPH04206536A - Probe driving mechanism, tunnel current detector and record reproducer fitted with the mechanism - Google Patents
Probe driving mechanism, tunnel current detector and record reproducer fitted with the mechanismInfo
- Publication number
- JPH04206536A JPH04206536A JP32963190A JP32963190A JPH04206536A JP H04206536 A JPH04206536 A JP H04206536A JP 32963190 A JP32963190 A JP 32963190A JP 32963190 A JP32963190 A JP 32963190A JP H04206536 A JPH04206536 A JP H04206536A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- probes
- probe
- tunnel current
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 title claims abstract description 59
- 230000007246 mechanism Effects 0.000 title claims abstract description 31
- 238000006073 displacement reaction Methods 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 abstract description 7
- 230000005611 electricity Effects 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 20
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 241000238557 Decapoda Species 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000003446 memory effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000143060 Americamysis bahia Species 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000004574 scanning tunneling microscopy Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は探針駆動機構及び該機構を備えたトンネル電流
検出装置及び記録・再生装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a probe drive mechanism, a tunnel current detection device, and a recording/reproducing device equipped with the mechanism.
［従来の技術］
現在、ＳＴＭの手法を用いて、半導体あるいは高分子材
料等の原子オーダー、分子オーダーの観察評価、微細加
工（Ｅ、Ｅ、Ｅｈｒ ｉ ｃｈｓ。[Prior Art] Currently, STM techniques are used to observe and evaluate semiconductors, polymer materials, etc. on the atomic order and molecular order, as well as microfabrication (E, E, Ehr i chs).
４ｔｈ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｃｏ ｎ
ｆｅｒｅｎｃｅ ｏｎ ＳｃａｎｎｉｎｇＴｕｎｎ
ｅｒｉｎｇ Ｍｉｃｒｏｓｃｏｐｙ／５ｐｅｃｔｏｓ
ｃｏｐｙ、’ ８９．Ｓ１３−３）、及び記録装置等
の様々な分野への応用が研究されている。4th International Con
ference on ScanningTunn
ering Microscopy/5pectos
copy,' 89. Applications to various fields such as S13-3) and recording devices are being studied.
なかでも、コンピューターの計算情報や映像情報等では
大容量を有する記録装置の要求に対してますます高まっ
ており、半導体プロセス技術の進展により、マイクロプ
ロセッサが小型化し、計算能力が向上した為に記録装置
の小型化が望まれている。これらの要求を満たす目的で
、記録媒体との間隔が微調整可能な駆動手段上に存在す
るトンネル電流発生用プローブからなる変換器から電圧
印加することによって記録媒体表面の仕事関数を変化さ
せる事により記録書き込みし、仕事関数の変化によるト
ンネル電流の変化を検知することにより情報の読み出し
を行い最小記録面積が１０ｎｍ平方となる記録再生装置
が提案されている。In particular, the demand for large-capacity recording devices is increasing for computer calculation information and video information, etc. Due to advances in semiconductor process technology, microprocessors have become smaller and computing power has improved, so recording It is desired that the device be made smaller. In order to meet these requirements, the work function of the surface of the recording medium is changed by applying voltage from a converter consisting of a tunneling current generating probe located on a driving means whose distance from the recording medium can be finely adjusted. A recording and reproducing apparatus has been proposed that performs recording and writing and reads information by detecting changes in tunnel current due to changes in work function, and has a minimum recording area of 10 nm square.
データ転送速度、及びデータ記録速度を向上させるため
にはプローブの数を増やす必要がある。In order to improve the data transfer rate and data recording rate, it is necessary to increase the number of probes.
この際、上述した様な装置においては１例としてプロー
ブと媒体との間隔を調整しつつ、記録データ列上をプロ
ーブが走行する必要がある。しかしながら、記録したデ
ータ列の幅が非常に細く、装置の温度変化によるドリフ
ト、外部からの振動などの影響によりプローブがデータ
列からはずれて安定した記録再生ができなくなる。更に
、１プローブをデータ列に添って走査させると他のプロ
ーブがデータ列からはずれてしまうことこととなる。At this time, in the above-mentioned apparatus, for example, it is necessary for the probe to travel over the recording data string while adjusting the distance between the probe and the medium. However, the width of the recorded data string is very narrow, and due to drift due to changes in the temperature of the device, vibrations from the outside, etc., the probe may deviate from the data string, making stable recording and reproduction impossible. Furthermore, if one probe is scanned along a data string, other probes will be deviated from the data string.
これを解決するために第４図の様な圧電体２１と電極２
０を積層し圧電体を４ブロツクに分け３軸駆動が可能な
自由端側にトンネル電流を検知するティップ２２を要す
る片持ち梁が提案されている。（ａ）は自由端方向の断
面図であり、（ｂ）は幅方向の断面図である。In order to solve this problem, a piezoelectric body 21 and an electrode 2 as shown in FIG.
A cantilever beam has been proposed in which the piezoelectric material is divided into four blocks and requires a tip 22 on the free end side for detecting tunnel current, which can be driven in three axes. (a) is a sectional view in the free end direction, and (b) is a sectional view in the width direction.
［発明が解決しようとする課題］ しかしながら、第５図の（ａ）’、（ｂ）。[Problem to be solved by the invention] However, (a)' and (b) in FIG.
（Ｃ）で示される様に各電極間に適当なバイアスをかけ
る事によりＸ、Ｙ、Ｚの各々単独での駆動は可能ではあ
るが、（ｂ）、（ｃ）の合成で同時に駆動しようとする
と梁がねじれる。実際に要求されるのは、（ｂ）、（ｃ
）のベクトル的な変位であるが、従来の構成では、ベク
トル的合成変位は不可能である。従ってプローブがデー
タ列からはずれてしまっても多数個のプローブを別個に
動かす事が出来なく正確な読み取り、書き込みが出来な
い。As shown in (C), it is possible to drive each of X, Y, and Z independently by applying an appropriate bias between each electrode, but it is possible to drive them simultaneously by combining (b) and (c). The beam then twists. What is actually required is (b), (c
), but in the conventional configuration, vector-like composite displacement is not possible. Therefore, even if a probe deviates from the data string, a large number of probes cannot be moved individually, making accurate reading and writing impossible.
本発明は上述の従来例の欠点に鑑みてなされたものであ
って、個々のプローブが夫々独立に媒体の熱膨張等の変
形があってもすべてのプローブでデータ列に添って記録
再生を可能にすることを目的とする。The present invention has been made in view of the above-mentioned drawbacks of the conventional example, and allows all probes to record and reproduce data along the data sequence even if each probe is independently deformed by thermal expansion of the medium. The purpose is to
［課題を解決するための手段］
上述の目的を達成するためにその片持梁を静電力と圧電
素子の変形による力を組み合わせる事によって、従来技
術による梁のゆがみ等をなくしベクトル合成的な変位を
可能にし情報の読み取り、書き込み等が正確に実行され
る。[Means for solving the problem] In order to achieve the above-mentioned purpose, by combining the electrostatic force and the force caused by the deformation of the piezoelectric element on the cantilever beam, distortion of the beam caused by the conventional technology can be eliminated, and vector composite displacement can be achieved. This makes it possible to read and write information accurately.
即ち、本発明は、支持体、トンネル電流を検知するティ
ップ、該トンネル電流を取り出す電極、該支持体を駆動
する圧電体及び該支持体を２軸方向に独立に駆動する電
極を有する片持ち梁を備えたことを特徴とする探針駆動
機構に係るものである。That is, the present invention provides a cantilever beam having a support, a tip for detecting tunnel current, an electrode for extracting the tunnel current, a piezoelectric body for driving the support, and an electrode for independently driving the support in two axial directions. The present invention relates to a probe drive mechanism characterized by comprising:
更に、前記の支持体を駆動する電極が、各々圧電体の変
位による駆動と静電力により駆動させるものであること
を特徴とする探針駆動機構に係るものである。Furthermore, the present invention relates to a probe driving mechanism characterized in that the electrodes for driving the support are driven by displacement of a piezoelectric body and by electrostatic force, respectively.
更に上記の探針駆動機構を備えたことを特徴とするトン
ネル電流検出装置及び記録再生装置に係るものである。Furthermore, the present invention relates to a tunnel current detection device and a recording/reproducing device characterized by being equipped with the above-mentioned probe driving mechanism.
［実施例Ｊ 以下、実施例により本発明を具体的に説明する。[Example J Hereinafter, the present invention will be specifically explained with reference to Examples.
犬１１肌土
第１図は本発明による片持ち梁の全体像を示し、このう
ち第１図（ａ）は自由端方向の断面図、第１図（ｂ）は
幅方向の断面図である。Figure 1 shows an overall view of the cantilever beam according to the present invention, of which Figure 1(a) is a cross-sectional view in the direction of the free end, and Figure 1(b) is a cross-sectional view in the width direction. .
梁の駆動はＺ軸方向に対して電極２と９の間にバイアス
を加える事で静電力により変位する。またＸ軸方向に対
しては電極２と４，４°に適当なバイアスを与える事に
よって変位する。この際、同時にバイアスを加える事に
よって、梁のねじれ等による異常な変位をする事なく所
望の変位を独立に得る事が可能である。The beam is driven by applying a bias between electrodes 2 and 9 in the Z-axis direction, thereby causing displacement by electrostatic force. Further, the displacement in the X-axis direction is achieved by applying an appropriate bias between the electrodes 2 and 4.4 degrees. At this time, by applying a bias at the same time, it is possible to independently obtain the desired displacement without causing abnormal displacement due to twisting of the beam or the like.
次にこの構成を得るための工程を図を用いて説明する。Next, the steps for obtaining this configuration will be explained using the drawings.
第２図はそのフローを示す図である。このうち第２図（
ａ）は２．３の工程を経た図であるが、ｎタイプのＳｉ
基板ｌＯにＢを表面から選択的に拡張しＰ゛層９形成し
、その上に１１００℃で５ｉＣｎ４を用いＰＨ３をドー
パントとして５μエビ成長させ、ｎタイプのエビ層７を
得る。選択的にＢを拡張しＰ型化し、静電力を得るため
の下電極の引出用のＰ°拡散層８を形成して第２図（ａ
）が得られる。基板とエビ度をｎ型とするのは他のプロ
ーブと電気的に分離するためである。FIG. 2 is a diagram showing the flow. Of these, Figure 2 (
a) is a diagram after the process 2.3, but n-type Si
B is selectively expanded from the surface of the substrate 1O to form a P layer 9, and a 5μ layer is grown thereon at 1100° C. using 5iCn4 and PH3 as a dopant to obtain an n-type layer 7. B is selectively expanded to make it P-type, and a P° diffusion layer 8 is formed for drawing out the lower electrode to obtain electrostatic force.
) is obtained. The reason why the substrate and the probe are n-type is to electrically isolate the probe from other probes.
次ニＬ Ｐ ＣＶ Ｄ ！： Ｊ：６ Ｎ Ｈ３トＳ
ｉ Ｈ４（’）気相成長によりＳ １３ Ｎ４１を１５
００人成膜し片持ち梁の形を得るためのパターニングを
行う。上面図は第２図（ｂ）の様である。Next LP CV D! : J:6 N H3toS
i H4(') S 13 N41 by vapor phase growth 15
A film was formed by 00 people and patterned to obtain a cantilever shape. The top view is as shown in FIG. 2(b).
次に金属を例えば、Ｃｒ、Ａｕの順に各々３０人、２０
００人蒸着レバ電極２を形成する。Next, select metals, for example, Cr and Au, 30 and 20 respectively.
00 people form the evaporation lever electrode 2.
電極材としてはＳｉの異方性エツチングの際に腐蝕され
ないＡｇ、Ｐｄ、Ｐｔ等でもよい。次に圧電体例えばＡ
ρＮ、ＺｎＯ，ＰＺＴ等をスパッタ法で１μ成膜しパタ
ーニングして圧電層３をパターニングすると第２図（Ｃ
）が得られる。The electrode material may be Ag, Pd, Pt, etc., which are not corroded during anisotropic etching of Si. Next, a piezoelectric material such as A
Figure 2 (C
) is obtained.
次に下電極８，９の引出しのためにＳｉ３Ｎ＋層１をパ
ターニングしＰ０拡散層８のコンタクト用窓１１を形成
し、上電極４としてＡｕを２０００人蒸着レバターニン
グしＳｉの異方性エツチング時に圧電体を保護するため
に保護層５としてａ−３ｉＮをプラズマ法で５０００人
成膜しパターニングすると第２図（ｄ）が得られる。Next, to draw out the lower electrodes 8 and 9, the Si3N+ layer 1 is patterned to form a contact window 11 for the P0 diffusion layer 8, and as the upper electrode 4, Au is deposited by 2000 layers and revertaned, and during anisotropic etching of Si. In order to protect the piezoelectric body, 5,000 a-3iN films were deposited and patterned by a plasma method as a protective layer 5, and the result shown in FIG. 2(d) was obtained.
この際トンネル電流検知用ティップの引出し電極４“と
下電極の引出し電極４′″も上電極形成を同時に行う。At this time, the upper electrodes of the tunnel current detection tip extraction electrode 4'' and the lower electrode extraction electrode 4'' are also formed at the same time.
次にトンネル電流検知用ティップ６を形成すると第２図
（ｅ）が得られる。ティップはＷあるいはｐｔでもよい
し、これら金属が表面に被覆された非導電物質の結晶体
であってもよい。Next, when the tunnel current detection tip 6 is formed, the result shown in FIG. 2(e) is obtained. The tip may be made of W or PT, or may be a crystal of a non-conductive substance whose surface is coated with these metals.
最後に５ｉ３Ｎ４１をマスクとしてＳｉの異方性エツチ
ングをＫＯＨ，ＮＨ，ＯＨあるいはエチレンヂアミン、
ピテカテコール系の水溶液で行う。この際、Ｐ４埋込層
９がエツチング層のストッパーとなり静電力駆動用の電
極間隔がエビ層７の厚さで決定される。最終的に第１図
の様な片持ち梁が得られる。Finally, using 5i3N41 as a mask, anisotropic etching of Si is performed using KOH, NH, OH or ethylenediamine.
Perform with an aqueous solution of pitecatechol. At this time, the P4 buried layer 9 serves as a stopper for the etching layer, and the electrode spacing for electrostatic force driving is determined by the thickness of the shrimp layer 7. Finally, a cantilever beam as shown in Figure 1 is obtained.
以上の様にして得られた片持ち梁を、例えば厚さが３０
０μ２幅５０μエビ層厚５μとするとバイアス５Ｖ″Ｃ
″Ｘ方向の変位として数１００人。The thickness of the cantilever beam obtained in the above manner is, for example, 30 mm.
0μ2 width 50μ shrimp layer thickness 5μ bias 5V''C
``Several 100 people as displacement in the X direction.
２方向の変位として数１０００人が得られ十分に使用に
耐える。Several thousand people can be obtained as displacement in two directions, and it is sufficiently usable.
夫五■ユ
次に、本発明の他の実施例として、前記探針駆動機構を
用いた記録再生装置の説明を行なう。第３図は、本発明
の記録再生装置の概略図である。Next, as another embodiment of the present invention, a recording/reproducing apparatus using the probe driving mechanism will be explained. FIG. 3 is a schematic diagram of the recording/reproducing apparatus of the present invention.
１０１は、本発明の探針駆動機構１０２を複数設けたシ
リコン基板、１０５は、シリコン基板を２方向に駆動す
る粗動用圧電素子、１０３は板状の記録媒体、１０４は
探針駆動機構の走査可能領域で決まる記録エリアを一列
に並べたデータ列である。記録媒体１０３は、図示せぬ
移動機構により、図中矢印の方向に並進移動され、記録
エリアは列状に記録される。探針駆動機構１０２と粗動
用圧電素子１０５は、図示せぬリニアモータなどの移動
機構によりデータ列と直交する方向に移動可能なように
構成され、任意のデータ列にアクセスし、データの記録
再生を行なうことができる。101 is a silicon substrate provided with a plurality of probe drive mechanisms 102 of the present invention, 105 is a piezoelectric element for coarse movement that drives the silicon substrate in two directions, 103 is a plate-shaped recording medium, and 104 is a scanning probe drive mechanism. This is a data string in which recording areas determined by possible areas are arranged in a line. The recording medium 103 is translated in the direction of the arrow in the figure by a moving mechanism (not shown), and the recording area is recorded in a row. The probe drive mechanism 102 and the coarse movement piezoelectric element 105 are configured to be movable in a direction perpendicular to the data string by a moving mechanism such as a linear motor (not shown), and can access any data string and record/reproduce data. can be done.
その際、目標とするデータ列までのアクセスは、リニア
エンコーダーなどの位置検出装置により行なわれ、その
後、探針駆動機構１０２の各々の探針は、目標のデータ
列の各々の記録エリア内を走査する。At this time, access to the target data string is performed by a position detection device such as a linear encoder, and then each probe of the probe drive mechanism 102 scans within each recording area of the target data string. do.
次に記録媒体１０３は電気メモリー効果を持つ薄膜、例
えば、π電子系有機化合物やカルコゲン化物類からなる
記録層と導電性のある基板からなり、探針と導電性基板
間にあるしきい値以上の電圧を印加することにより、探
針直下の記録層に微小な領域で特性変化を生じさせ記録
を行うことができる。また、再生は、探針と記録層間に
流れるトンネル電流が、記録部と非記録部とで変化する
ことにより行なう。Next, the recording medium 103 is made of a thin film having an electric memory effect, for example, a recording layer made of a π-electron based organic compound or chalcogenide, and a conductive substrate, and is made of a thin film having an electric memory effect, for example, a recording layer made of a π-electron based organic compound or a chalcogenide, and a conductive substrate. By applying a voltage of , it is possible to cause a characteristic change in a minute area in the recording layer directly under the probe and perform recording. Further, reproduction is performed by changing the tunnel current flowing between the probe and the recording layer between the recorded portion and the non-recorded portion.
また記録媒体１０３として、あるしきい値以上の電圧を
印加すると表面が局所的に溶融または蒸発して、表面形
状が凹または凸に変化する材料、例えば、Ａｕ、Ｐｔな
どの金属薄膜を用いてもよい。Furthermore, as the recording medium 103, a material such as a metal thin film such as Au or Pt, whose surface locally melts or evaporates to change the surface shape to convex or convex when a voltage of a certain threshold value or more is applied, is used. Good too.
次に、記録再生の方法を説明する。Next, a recording/reproducing method will be explained.
まず、記録方法は、２方向粗動用圧電素子１０５と探針
駆動機構１０２は移動機構により、記録位置に移動し、
記録媒体１０３のあるしきい値を越える電圧を印加する
ことにより行なう。その際、記録媒体１０３には、バイ
アス回路１０６によりバイアス電圧が加えられ、探針は
記録媒体１０３に対してトンネル電流が流れる距離に保
たれている。その接近は、Ｚ方向粗動用圧電素子１０５
により、近傍まで近づけ、後は、複数ある探針駆動機［
１０２で各々の探針ごとにトンネル領域に引き込まれる
。その引込みは各探針に対応したトンネル電流検出回路
１０７により検出されたトンネル電流を各々の探針駆動
機構１０２のＺ方向サーボ回路１１０を通してフィード
バックすることにより、各探針と記録媒体間を一定距離
に制御している。そのとき、２方向サーボ回路１１０に
はローパスフィルターが設けられ、そのカットオフ周波
数はデータ信号には追従せず、記録媒体の面振れ、表面
のうねりに追従できるように選ばれ、探針と記録媒体の
平均距離が一定となるように制御される。First, in the recording method, the piezoelectric element 105 for coarse movement in two directions and the probe drive mechanism 102 are moved to a recording position by a moving mechanism,
This is done by applying a voltage exceeding a certain threshold value to the recording medium 103. At this time, a bias voltage is applied to the recording medium 103 by a bias circuit 106, and the probe is kept at a distance from the recording medium 103 where a tunnel current flows. The approach is caused by the piezoelectric element 105 for coarse movement in the Z direction.
After that, the multiple probe drive machines [
At 102, each probe is drawn into the tunnel region. The retraction is performed by feeding back the tunnel current detected by the tunnel current detection circuit 107 corresponding to each probe through the Z-direction servo circuit 110 of each probe drive mechanism 102, thereby maintaining a certain distance between each probe and the recording medium. is controlled. At this time, the two-way servo circuit 110 is provided with a low-pass filter, whose cutoff frequency is selected so as not to follow the data signal, but to follow the surface waviness and surface waviness of the recording medium. The average distance of the medium is controlled to be constant.
記録時には、制御回路１１２から記録信号かパルス印加
回路１０８に送られ、各探針にパルス電圧として印加さ
れ、記録が行なわれる。During recording, a recording signal is sent from the control circuit 112 to the pulse application circuit 108, and is applied as a pulse voltage to each probe to perform recording.
その際、パルス印加により探針と記録媒体の距離が変化
しないようにＺ方向サーボ回路１１０には、ホールド回
路を設けて、パルス電圧が印加されている探針駆動機構
１０２の駆動電圧を保持する。At this time, in order to prevent the distance between the probe and the recording medium from changing due to pulse application, the Z-direction servo circuit 110 is provided with a hold circuit to maintain the drive voltage of the probe drive mechanism 102 to which the pulse voltage is applied. .
そのとき、データ列の記録エリア内には図の拡大図のよ
うに記録ビットがマトリクス状に記録される。各々の記
録ビット列には、アドレス情報が挿入されており、再生
時のデータの識別を行なう。At this time, recording bits are recorded in a matrix in the recording area of the data string as shown in the enlarged view of the figure. Address information is inserted into each recording bit string to identify data during reproduction.
次に再生方法について説明する。Next, the reproduction method will be explained.
再生時には探針は、移動機構により所望のデータ列の記
録エリア上に移動し、記録媒体１０３の表面との間のト
ンネル電流の記録部と非記録部の変化分を検出し再生を
行なう。そのとき探針駆動機構１０２はＸＹ位置制御回
路１０９により制御され、探針が記録エリアの全域を走
査するように駆動される。１つの記録エリア内の再生信
号は、トンネル電流検出回路１０７を通し、制御回路１
１２で信号処理して一時的に記憶され、その中から所望
のデータのみが再生出力される。During reproduction, the probe is moved by a moving mechanism onto the recording area of a desired data string, detects the change in the tunnel current between the recorded part and the non-recorded part between the surface of the recording medium 103, and performs reproduction. At this time, the probe drive mechanism 102 is controlled by the XY position control circuit 109, and is driven so that the probe scans the entire recording area. The reproduced signal within one recording area passes through the tunnel current detection circuit 107 and is sent to the control circuit 1.
12, the signal is processed and temporarily stored, and only desired data is reproduced and output.
このような記録再生装置において探針駆動機構を前記実
施例のような構成とすることにより、１つの探針で走査
できる領域が広がり、１つの記録エリアが大きくなり、
全体として記録密度を上げることができる。By configuring the probe drive mechanism in such a recording/reproducing device as in the above embodiment, the area that can be scanned by one probe increases, and one recording area becomes larger.
Overall recording density can be increased.
［発明の効果］
以上説明した様に本発明によれば片持ち梁の駆動を独立
にしたことによってより精度のよいプローブと媒体の間
隔調整とトラッキングを行える様になったので、装置の
温度変化、外部からの振動、媒体の熱膨張等が発生して
も常に安定して情報の読み出しまたは書き込みを行うこ
とが可能となった。[Effects of the Invention] As explained above, according to the present invention, by making the cantilever beam independent, it is possible to perform more accurate distance adjustment and tracking between the probe and the medium, so that temperature changes in the device can be avoided. It has become possible to always stably read or write information even when external vibrations, thermal expansion of the medium, etc. occur.
第１図は本発明による探針駆動機構の断面図であり、
第２図は、その作製工程図を示し、
第３図は本発明の記録再生装置の概略図であり、
第４図は、従来の探針駆動機構の断面図であり、
第５図は、従来の探針駆動機構の駆動による変形を示す
図である。
１・・・５Ｌ３Ｎ＜層 ２・・・中電極３・・・圧電
層 ４・・・上電極５・・・保護層
６・・・ティップ７・・・エビ層 ８・・・下
電極引出し用拡散層９・・・下電極 １０・・
・ＳＬ基板２０・・・電極 ２１・・・圧電層
２２・・・ティップ
１０２・・・探針駆動機構
１０３・・・記録媒体
１０５・・・Ｚ方向粗動用圧電素子
１０６・・・バイアス回路
１０７・・・トンネル電流検出回路
１０８・・・パルス印加回路
１０９・・・ＸＹ位置制御回路
１１０・・・２方向サーボ回路
１１２・・・制御回路FIG. 1 is a cross-sectional view of the probe drive mechanism according to the present invention, FIG. 2 is a diagram showing the manufacturing process thereof, FIG. 3 is a schematic diagram of the recording/reproducing apparatus of the present invention, and FIG. FIG. 5 is a sectional view of a conventional probe drive mechanism, and FIG. 5 is a diagram showing deformation of the conventional probe drive mechanism due to driving. 1...5L3N<layer 2...Middle electrode 3...Piezoelectric layer 4...Upper electrode 5...Protective layer
6...Tip 7...Shrimp layer 8...Diffusion layer for lower electrode extraction 9...Lower electrode 10...
・SL substrate 20... Electrode 21... Piezoelectric layer 22... Tip 102... Probe drive mechanism 103... Recording medium 105... Piezoelectric element for Z direction coarse movement 106... Bias circuit 107 ... Tunnel current detection circuit 108 ... Pulse application circuit 109 ... XY position control circuit 110 ... Two-direction servo circuit 112 ... Control circuit
Claims (3)
ンネル電流を取り出す電極、該支持体を駆動する圧電体
及び該支持体を２軸方向に独立に駆動する電極を有する
片持ち梁を備えたことを特徴とする探針駆動機構。(1) A cantilever beam having a support, a tip for detecting tunnel current, an electrode for extracting the tunnel current, a piezoelectric body for driving the support, and an electrode for independently driving the support in two axial directions. A probe drive mechanism characterized by the following.
位による駆動と静電力により駆動させるものであること
を特徴とする請求項（１）に記載の探針駆動機構。(2) The probe drive mechanism according to claim 1, wherein the electrodes for driving the support are driven by displacement of a piezoelectric body and by electrostatic force, respectively.
を特徴とするトンネル電流検出装置。（４）請求項（１
）に記載の探針駆動機構を備えたことを特徴とする記録
再生装置。(3) A tunnel current detection device comprising the probe drive mechanism according to claim (1). (4) Claim (1
) A recording/reproducing device comprising the probe driving mechanism according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32963190A JPH04206536A (en) | 1990-11-30 | 1990-11-30 | Probe driving mechanism, tunnel current detector and record reproducer fitted with the mechanism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32963190A JPH04206536A (en) | 1990-11-30 | 1990-11-30 | Probe driving mechanism, tunnel current detector and record reproducer fitted with the mechanism |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04206536A true JPH04206536A (en) | 1992-07-28 |
Family
ID=18223505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32963190A Pending JPH04206536A (en) | 1990-11-30 | 1990-11-30 | Probe driving mechanism, tunnel current detector and record reproducer fitted with the mechanism |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04206536A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5570336A (en) * | 1992-12-08 | 1996-10-29 | Sharp Kabushiki Kaisha | Information recording and reproducing apparatus having a slider formal of single crystal silicon body and cantilever |
| US5581538A (en) * | 1993-12-16 | 1996-12-03 | Sharp Kabushiki Kaisha | Recording/reproducing apparatus with a probe to detect data recorded in pits and projections of a recording medium |
-
1990
- 1990-11-30 JP JP32963190A patent/JPH04206536A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5570336A (en) * | 1992-12-08 | 1996-10-29 | Sharp Kabushiki Kaisha | Information recording and reproducing apparatus having a slider formal of single crystal silicon body and cantilever |
| US5581538A (en) * | 1993-12-16 | 1996-12-03 | Sharp Kabushiki Kaisha | Recording/reproducing apparatus with a probe to detect data recorded in pits and projections of a recording medium |
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