JP2942011B2 - Information storage device - Google Patents
Information storage deviceInfo
- Publication number
- JP2942011B2 JP2942011B2 JP17679491A JP17679491A JP2942011B2 JP 2942011 B2 JP2942011 B2 JP 2942011B2 JP 17679491 A JP17679491 A JP 17679491A JP 17679491 A JP17679491 A JP 17679491A JP 2942011 B2 JP2942011 B2 JP 2942011B2
- Authority
- JP
- Japan
- Prior art keywords
- probe
- medium
- recording medium
- probe electrode
- distance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えばトンネル電流を
用いて高密度な情報の記録及び／又は再生を行なう技術
分野に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the technical field of recording and / or reproducing high-density information using, for example, a tunnel current.
【０００２】[0002]
【従来の技術】情報記憶素子や情報記憶装置等のいわゆ
るメモリは、コンピュータ及びその他関連機器の中核を
なすものであり、ビデオディスク、デジタルオーディオ
ディスク等に見られるように、映像装置、音響装置の中
でも重要な地位を占めている。このメモリに要求される
性能はその用途によって異なるが、一般的には以下のよ
うな点が挙げられる。 （１）高密度で記録容量が大きい。 （２）記録再生の応答速度が大きい。 （３）消費電力が少ない。 （４）生産性が高く、価格が低い。2. Description of the Related Art So-called memories, such as information storage elements and information storage devices, are at the core of computers and other related equipment. Among them, it occupies an important position. The performance required of this memory varies depending on its use, but generally includes the following points. (1) High density and large recording capacity. (2) The response speed of recording and reproduction is high. (3) Low power consumption. (4) High productivity and low price.
【０００３】従来、メモリの中心は磁性体や半導体を素
材とした磁気メモリーや半導体メモリであったが、近
年、レーザ技術の進展に伴い、有機色素、フォトポリマ
などの有機薄膜を用いた安価で高密度な光メモリが登場
している。現在、これらのメモリを更に高密度で大容量
にするために単位メモリビットの微細化に向けての技術
開発が進められているが、これらの従来のメモリとは全
く別の原理に基づくメモリの提案もされている。例え
ば、個々の有機分子に論理素子やメモリ素子の機能を持
たせた分子電子デバイスの概念もその一つである。分子
電子デバイスは単位メモリビットの微細化を極限まで進
めたものと見ることができるが、これまで個々の分子に
いかにアクセスするかが問題とされてきた。Conventionally, the center of memory has been a magnetic memory or a semiconductor memory using a magnetic material or a semiconductor as a material. In recent years, with the development of laser technology, inexpensive organic thin films such as organic dyes and photopolymers have been used. High-density optical memory has appeared. At present, technology development for miniaturization of unit memory bits is being promoted to further increase the density and capacity of these memories, but memories based on a completely different principle from these conventional memories are being developed. Suggestions have been made. For example, the concept of a molecular electronic device in which individual organic molecules have functions of a logic element and a memory element is one of them. Although it can be seen that molecular electronic devices have advanced the miniaturization of unit memory bits to the limit, how to access individual molecules has been a problem so far.
【０００４】一方、最近、導体の表面原子の電子構造を
直接観察できる走査型トンネル顕微鏡（以後、ＳＴＭと
略す）が開発され [G.Binnig etal. Phys. Rev. Lett,
49,57 (1982)]、単結晶、非晶質を問わず実空間像を高
い分解能で測定できるようになり、しかもＳＴＭは試料
に電流による損傷を与えずに低電力で観測が行なえる利
点も有しており、更に大気中でも動作し、種々の材料に
対して用いることができるため広範囲な応用が期待され
ている。最近では導体表面に吸着した有機分子の分子像
観察すら可能であることが報告されている。On the other hand, recently, a scanning tunneling microscope (hereinafter abbreviated as STM) capable of directly observing the electronic structure of surface atoms of a conductor has been developed [G. Binnig et al. Phys. Rev. Lett,
49,57 (1982)], real space images can be measured with high resolution irrespective of single crystal or amorphous, and STM has the advantage that it can be observed with low power without damaging the sample by current. It also operates in the atmosphere and can be used for various materials, so that a wide range of applications is expected. Recently, it has been reported that it is possible to observe even a molecular image of an organic molecule adsorbed on a conductor surface.
【０００５】一方、ＳＴＭの技術を応用した原子間力顕
微鏡（以後、ＡＦＭと略す）が開発され [G.Binnig et
al.,Phys.Rev.Lett.,56,930(1985)]、ＳＴＭと同様、表
面の凹凸情報を得ることができるようになった。ＡＦＭ
は導電体に限らず絶縁性の試料に対しても原子オーダー
で測定が可能なため今後の発展が望まれている。On the other hand, an atomic force microscope (hereinafter abbreviated as AFM) to which STM technology is applied has been developed [G. Binnig et al.
al., Phys. Rev. Lett., 56 , 930 (1985)], as in STM, it has become possible to obtain surface unevenness information. AFM
Since it is possible to measure not only conductors but also insulating samples in atomic order, further development is desired.
【０００６】ＳＴＭは金属の探針（プローブ電極）と導
電性物質間に電圧を印加して、１ｎｍ程度の距離まで近
づけるとトンネル電流が流れることを利用している。こ
の電流は両者の距離変化に非常に敏感である。トンネル
電流を一定に保つように探針を走査することにより、こ
の導電性物質の実空間の表面構造を描くことができると
同時に、表面原子の全電子雲に関する種々の情報をも読
み取ることができる。この際、面内方向の分解能は１Å
（０．１ｎｍ）程度である。[0006] The STM utilizes the fact that a tunnel current flows when a voltage is applied between a metal probe (probe electrode) and a conductive substance to approach a distance of about 1 nm. This current is very sensitive to changes in the distance between them. By scanning the probe so that the tunnel current is kept constant, the surface structure of this conductive material in real space can be drawn, and at the same time, various information on the entire electron cloud of surface atoms can be read. . At this time, the resolution in the in-plane direction is 1Å
(0.1 nm).
【０００７】従ってＳＴＭの原理を応用すれば十分に原
子オーダー（数Å）での高密度記録再生を行なうことが
可能である。この際の記録再生方法としては、粒子線
（電子線、イオン線）あるいはＸ線等の高いエネルギ電
磁波、及び可視・紫外光等のエネルギ線を用いて、適当
な記録層の表面状態を変化させて記録を行ない、ＳＴＭ
で再生する方法や、あるいは記録層として電圧印加によ
って導電率の異なる状態へ遷移するスイッチング特性を
有し、且つ導電率の異なる各状態が電圧を印加しない状
態でも保持されるメモリ特性を有している媒体、例えば
π電子系有機化合物やカルコゲン化合物類の薄膜層を用
いて記録・再生をＳＴＭで行なう方法が知られている。
これは例えば特開昭６３−１６１５５２号公報、特開昭
６３−１６１５５３号公報等に開示されている。この方
法によれば、記録のビットサイズを１０ｎｍとすれば１
０12ｂｉｔ／ｃｍ2 もの高密度記録再生が可能である。Therefore, if the principle of STM is applied, it is possible to perform high-density recording / reproduction sufficiently in the atomic order (several Å). As a recording / reproducing method at this time, a surface state of an appropriate recording layer is changed by using a high energy electromagnetic wave such as a particle beam (electron beam, ion beam) or X-ray, or an energy beam such as visible or ultraviolet light. To record and STM
In the method of reproducing with the or the recording layer having a switching characteristic of transitioning to a state having different conductivity by applying a voltage, and having a memory characteristic in which each state having a different conductivity is retained even when no voltage is applied. A method is known in which recording / reproduction is performed by STM using a medium such as a thin film layer of a π-electron organic compound or a chalcogen compound.
This is disclosed in, for example, JP-A-63-161552 and JP-A-63-161553. According to this method, if the recording bit size is 10 nm, 1
High-density recording and reproduction as high as 0 12 bit / cm 2 is possible.
【０００８】一方、情報記憶装置として、その情報転送
速度を向上させるため一般的に用いられる方法は、情報
の記録手段及び再生手段を複数具備した記憶装置によっ
て、時系列情報を並列情報に変換して複数の情報を同時
に記録し、又、複数の情報を並列情報として読出した
後、時系列情報に変換して再生するものである。ＳＴＭ
を応用した情報記憶装置においても、複数のプローブ電
極を具備することにより、同様に転送速度の向上がはか
れる。On the other hand, a method generally used as an information storage device for improving the information transfer speed is to convert time-series information into parallel information by using a storage device having a plurality of information recording means and reproduction means. A plurality of pieces of information are recorded at the same time, and a plurality of pieces of information are read out as parallel information, then converted into time-series information and reproduced. STM
In an information storage device to which the method described above is applied, the transfer speed can be similarly improved by providing a plurality of probe electrodes.
【０００９】又、半導体の微細加工技術を駆使して、片
持梁などの弾性体上にプローブ電極を形成し、かつ圧電
アクチュエータ等を弾性体上に形成して弾性体を変形駆
動可能とした記録再生ヘッドを複数個、一体基板上に形
成した情報記憶システムも提案されている。Also, by making full use of semiconductor fine processing technology, a probe electrode is formed on an elastic body such as a cantilever, and a piezoelectric actuator or the like is formed on the elastic body so that the elastic body can be deformed and driven. An information storage system in which a plurality of recording / reproducing heads are formed on an integrated substrate has also been proposed.
【００１０】[0010]
【発明が解決しようとする課題】ＳＴＭを応用した情報
記憶装置においては、プローブ電極を記録媒体表面に極
く近く、１ｎｍ程度まで接近させる必要がある。従って
プローブ電極を複数個具備させた場合には、全てのプロ
ーブ電極を等しく記録媒体表面から１ｎｍ程度のところ
まで接近させなければならない。即ち全てのプローブ電
極の先端を記録媒体表面を１ｎｍ程度平行移動させた仮
想曲面上に位置させる必要性がある。In an information storage device to which the STM is applied, it is necessary to bring the probe electrode very close to the surface of the recording medium and to approach the surface to about 1 nm. Therefore, when a plurality of probe electrodes are provided, all the probe electrodes must be equally approached from the surface of the recording medium to about 1 nm. That is, it is necessary to position the tips of all the probe electrodes on a virtual curved surface in which the surface of the recording medium is translated by about 1 nm.
【００１１】しかしながら、複数個のプローブ電極が１
つの支持体上に一体構成されている場合、全てのプロー
ブ電極の先端がある特定の曲面上に位置するように作成
することは困難である。該曲面が平面の場合、プローブ
電極先端の平面からの位置ずれは全プローブ電極それぞ
れについて１ｎｍ以下であることが望ましく、そのよう
な精度で複数のプローブ電極を支持体上に一体作成する
ことは困難である。又、仮にプローブ電極先端位置を極
めて均一に形成できたとしても、記録媒体表面は厳密に
はうねり等があって不均一である場合が多く、各プロー
ブ電極先端と記録媒体との距離を同一にすることが困難
である。However, a plurality of probe electrodes
When the probe electrodes are integrally formed on one support, it is difficult to form such that the tips of all the probe electrodes are located on a specific curved surface. When the curved surface is a flat surface, the displacement of the tip of the probe electrode from the flat surface is desirably 1 nm or less for all the probe electrodes, and it is difficult to integrally form a plurality of probe electrodes on the support with such accuracy. It is. Even if the probe electrode tip position can be formed very uniformly, the surface of the recording medium is often undulated and strictly uneven in many cases, and the distance between each probe electrode tip and the recording medium is the same. Is difficult to do.
【００１２】そこで、それぞれのプローブ電極の先端位
置を独立に移動させる機構を設け、該プローブ電極先端
それぞれの位置を独立に変化させ、全プローブ電極の先
端の位置する曲面を、形成時とは異なった曲面にする必
要がある。しかしながら、プローブ電極先端群と記録媒
体表面の相対関係が情報記憶装置の駆動毎に常に一定に
保たれるとは限らない。従って駆動開始時には相対関係
が不明であるから、プローブ電極先端の変位量は駆動毎
に求めなければならない。このためプローブ電極移動機
構の無駆動時の変位が一方向に偏る場合が起こり得る。Therefore, a mechanism for independently moving the tip positions of the respective probe electrodes is provided, and the positions of the respective probe electrode tips are independently changed, so that the curved surfaces on which the tip ends of all the probe electrodes are located are different from those at the time of formation. Need to be curved. However, the relative relationship between the probe electrode tip group and the surface of the recording medium is not always kept constant every time the information storage device is driven. Therefore, since the relative relationship is unknown at the start of driving, the displacement of the probe electrode tip must be obtained for each driving. For this reason, the displacement of the probe electrode moving mechanism when it is not driven may be biased in one direction.
【００１３】一方、プローブ電極群と記録媒体の接近が
完了した後、情報記憶装置として動作する際には、接近
完了時に必要であった各プローブ電極の変位量を保持
し、あるいはこの変位量の周りで微小な変位を継続さ
せ、位置制御を行なう。この際、上述の変位の偏りによ
って、一部のプローブ電極の位置制御が可能な範囲が制
限される場合が生じてしまう畏れがあるという課題があ
った。On the other hand, when the information storage device operates after the approach between the probe electrode group and the recording medium is completed, the amount of displacement of each probe electrode required at the time of the completion of the approach is held or Position control is performed by continuing a small displacement around the periphery. In this case, there is a problem that a range in which the position of some of the probe electrodes can be controlled may be limited due to the above-described bias of the displacement.
【００１４】以上の問題は、走査型プローブ顕微鏡（Ｓ
ＴＭ）や原子間力顕微鏡（ＡＦＭ）を応用した情報記憶
装置において、プローブが複数存在する場合に全て共通
する課題であった。The above problem is caused by the scanning probe microscope (S
In an information storage device to which a TM) or an atomic force microscope (AFM) is applied, when there are a plurality of probes, it is a common problem.
【００１５】本発明は上記課題を解決すべくなされたも
ので、全てのプローブ電極を記録媒体表面の極く近傍ま
で接近させることが可能であり、プローブ電極製造時の
プローブ先端位置のばらつき、あるいは記録媒体表面が
不均一であっても、その影響を受けずに補償することの
できる装置の提供を目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is possible to make all the probe electrodes come very close to the surface of the recording medium, and to disperse the probe tip positions at the time of manufacturing the probe electrodes, or It is an object of the present invention to provide a device capable of compensating for a non-uniform recording medium surface without being affected by the unevenness.
【００１６】[0016]
【課題を解決するための手段】上記課題を解決する本発
明の情報記憶装置は、情報の記録及び／又は再生用の複
数のプローブと、該複数のプローブを媒体に対向して並
列に配置して一体的に支持する支持手段と、前記媒体と
前記支持手段との間隔を調整する調整手段と、前記媒体
と前記各プローブ先端との間隔を独立に調整するため
に、各プローブを独立に間隔方向に変位させる変位手段
と、前記媒体と前記各プローブ先端との間隔が全て等し
くなるように前記変位手段を制御し、その時の前記複数
のプローブの変位量の平均が実質的に０となるように前
記調整手段を制御する制御手段と、前記プローブを用い
て媒体に記録及び／又は再生を行なう手段とを有するこ
とを特徴とする。According to the present invention, there is provided an information storage apparatus comprising: a plurality of probes for recording and / or reproducing information; and a plurality of probes arranged in parallel facing a medium. Supporting means for integrally supporting the medium, adjusting means for adjusting the distance between the medium and the supporting means, and independently adjusting the distance between the medium and the tip of each probe so that the distance between the probes can be adjusted independently. And controlling the displacement means so that the distance between the medium and the tip of each probe is all equal, so that the average of the displacement amounts of the plurality of probes at that time becomes substantially zero. And a means for controlling the adjusting means, and means for performing recording and / or reproduction on a medium using the probe.
【００１７】[0017]
【実施例】以下、所謂ＳＴＭの原理を用いた情報記憶装
置の実施例を説明する。図１はプローブ電極を中心とし
た記録ヘッド部分の構成図であり、１はプローブ電極、
２は各プローブ電極の先端部を媒体表面垂直方向に移動
させて両者の間隔を調整するためのプローブ変位機構で
あり、各プローブ電極１と対になって設けられている。
３は複数のプローブ変位機構２を一体的に支持する支持
体であり、ｍ×ｎ個のプローブ変位機構２及びプローブ
電極１が記録ヘッドユニットとして一体化されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of an information storage device using the so-called STM principle will be described below. FIG. 1 is a configuration diagram of a recording head portion centering on a probe electrode.
Reference numeral 2 denotes a probe displacement mechanism for moving the tip of each probe electrode in the direction perpendicular to the medium surface to adjust the distance between them, and is provided in pairs with each probe electrode 1.
Reference numeral 3 denotes a support for integrally supporting the plurality of probe displacement mechanisms 2, and the mxn probe displacement mechanisms 2 and the probe electrodes 1 are integrated as a recording head unit.
【００１８】図２は図１における各々のプローブ電極及
びプローブ変位機構の詳細な構造を示す。同図におい
て、ＳｉＯ2 から成る片持梁構造の弾性体２０１と、該
片持梁上に金属電極２０２と、ＡｌＮから成る圧電性薄
膜２０３を交互に積層したバイモルフ構造の圧電アクチ
ュエータを形成し、金属電極２０２間に電圧を印加する
ことによって、少なくとも圧電薄膜の面外方向に撓むよ
うに駆動することができる。なお、プローブ電極の先端
部１０１は、記録・再生・消去の分解能を向上させるた
めには、できるだけ尖らせた方が良く、理論的には先端
部１０１を原子・分子レベルまで尖らせることによっ
て、原子・分子オーダーの分解能を得ることができる。
該プローブ電極の作成法として本実施例ではＳｉＯ2 上
にＳｉをフォーカスト・イオンビームで打ち込み、Ｓｉ
の上に選択的にＳｉを結晶させて先端部１０１を形成
し、その上にＡｕを蒸着して導電コート１０２を施し
た。これらはマイクロメカニクスの技術により、シリコ
ンウエハ上に一体で形成される。なお、プローブ変位機
構２として、弾性体の構造は片持梁には限定されない。
又、アクチュエータもバイモルフ構造に限定されるもの
ではなく、プローブ電極先端を記録媒体表面へ接近を可
能にする運動が可能であれば良く、それらの構成材料も
上述の材料に限られるものではない。更にプローブ電極
１の形状や形成法や処理も上述の実施例に限定されるも
のではない。FIG. 2 shows a detailed structure of each probe electrode and probe displacement mechanism in FIG. In the same figure, a bimorph piezoelectric actuator is formed by alternately stacking a cantilever elastic body 201 made of SiO 2 , a metal electrode 202 and a piezoelectric thin film 203 made of AlN on the cantilever, By applying a voltage between the metal electrodes 202, the piezoelectric thin film can be driven so as to bend at least in an out-of-plane direction. The tip 101 of the probe electrode is preferably sharpened as much as possible in order to improve the recording / reproducing / erasing resolution. In theory, the tip 101 is sharpened to the atomic / molecular level. Atomic and molecular resolution can be obtained.
In this embodiment, as a method of forming the probe electrode, Si is implanted on SiO 2 with a focused ion beam,
A tip portion 101 was formed by selectively crystallizing Si on the substrate, and a conductive coat 102 was applied thereon by depositing Au. These are integrally formed on a silicon wafer by micromechanics technology. The structure of the elastic body of the probe displacement mechanism 2 is not limited to a cantilever.
Also, the actuator is not limited to the bimorph structure, but may be any as long as it can move the tip of the probe electrode to the surface of the recording medium, and their constituent materials are not limited to the above-mentioned materials. Further, the shape, forming method, and processing of the probe electrode 1 are not limited to the above-described embodiment.
【００１９】図３は上記機構を有する情報記憶装置の実
施例の全体構成図を示す。４は記録媒体を示し、導電性
の基板４０２上に記録層４０１が形成されている。記録
層４０１としては、例えばＳＯＡＺ（スクアリリウム−
ビス−６−オクチルアズレン）をＬＢ法を用いて８層累
積したものである。５は媒体微動機構、７は媒体粗動機
構であり、それぞれ記録媒体４を支持体３に対して３次
元的に粗動変位、微動変位させる。微動制御回路６、粗
動制御回路８はそれらの駆動制御を行なう。又、１０の
プローブ制御回路は複数のプローブ電極のそれぞれの移
動機構２の駆動制御を独立に行なう。１１は電流検出回
路であり、それぞれのプローブ電極１と記録媒体４との
間に流れるトンネル電流を独立に検出する。１２は電圧
印加回路であり、各プローブ電極１と記録媒体との間に
記録・再生・消去のための電圧を独立に印加する。９は
マイクロコンピュータであり装置全体の中央制御を行な
う。１３に示す筐体によって制御回路を除く上記各機構
が一体的にユニット化されている。なお、支持体３と記
録媒体４との間の相対的位置関係を変化させる機構であ
れば上記構成には限定されない。例えば、支持体３側に
粗動機構、微動機構を設けたり、支持体側と記録媒体側
の両方に移動機構を設けるようにしても良い。FIG. 3 shows an overall configuration diagram of an embodiment of an information storage device having the above mechanism. Reference numeral 4 denotes a recording medium in which a recording layer 401 is formed on a conductive substrate 402. As the recording layer 401, for example, SOAZ (squarylium-
Bis-6-octylazulene) is accumulated in eight layers using the LB method. Reference numeral 5 denotes a medium fine movement mechanism, and reference numeral 7 denotes a medium coarse movement mechanism, which respectively three-dimensionally and coarsely displaces the recording medium 4 with respect to the support 3. The fine movement control circuit 6 and the coarse movement control circuit 8 control their driving. Further, the ten probe control circuits independently control the drive of each moving mechanism 2 of the plurality of probe electrodes. Numeral 11 denotes a current detection circuit which independently detects a tunnel current flowing between each probe electrode 1 and the recording medium 4. Reference numeral 12 denotes a voltage application circuit, which independently applies a voltage for recording, reproducing, and erasing between each probe electrode 1 and a recording medium. Reference numeral 9 denotes a microcomputer which performs central control of the entire apparatus. The above-described mechanisms except for the control circuit are integrally unitized by a housing shown in FIG. The configuration is not limited to the above configuration as long as the mechanism changes the relative positional relationship between the support 3 and the recording medium 4. For example, a coarse movement mechanism and a fine movement mechanism may be provided on the support 3 side, or a movement mechanism may be provided on both the support side and the recording medium side.
【００２０】次に以上の構成の装置の動作について詳細
に説明する。支持体３上に互いに直交するＸ軸、Ｙ軸を
とり、これらに垂直方向をＺ軸とし、記録媒体に近づく
方向を正とする。各プローブ駆動機構の無駆動時からの
変位をもって各プローブ電極先端位置のＺ座標とする。
プローブ電極は支持体上に一体で形成されるので、形成
時に各プローブ電極先端のＸ座標、Ｙ座標は知ることが
できる。なお、プローブ変位機構の変位量は制御電圧に
よって制御されるため、変位量は制御電圧の関数として
表わされる。従って変位−電圧特性を予め知っておけ
ば、制御電圧のモニタによって変位量を知ることができ
る。Next, the operation of the apparatus having the above configuration will be described in detail. The X-axis and the Y-axis, which are orthogonal to each other, are set on the support 3, and the direction perpendicular to these is set as the Z-axis, and the direction approaching the recording medium is set as positive. The displacement from the non-driving state of each probe driving mechanism is defined as the Z coordinate of the tip position of each probe electrode.
Since the probe electrodes are formed integrally on the support, the X and Y coordinates of the tip of each probe electrode can be known at the time of formation. Since the displacement of the probe displacement mechanism is controlled by the control voltage, the displacement is expressed as a function of the control voltage. Therefore, if the displacement-voltage characteristics are known in advance, the displacement can be known by monitoring the control voltage.
【００２１】プローブ電極の接近方法の手順は以下の通
りである。なお、図４はこの手順を詳細に示すフローチ
ャート図である。これらの動作ステップはマイクロコン
ピュータ９の指令に基づいてなされる。始めに、全ての
プローブ電極に等しい所定のバイアス電圧を印加し、そ
れぞれのプローブ電極に流れる電流をモニタしながら、
媒体粗動機構７によってある程度まで大まかに接近さ
せ、次に媒体微動機構５によって記録媒体とプローブ電
極群の支持体との間隔を僅かずつ接近させる。接近させ
る最中、電流検出回路１１において、ｍ×ｎ個のプロー
ブ電極のそれぞれに流れる電流を個別に検出する。接近
するにつれて各プローブ電極に流れる電流値が徐々に増
加する。最初にいずれかのプローブ電極の１つの電流が
予め設定した閾値を越えた時、記録媒体の接近を一旦停
止させ、前記閾値を越えたプローブ電極に対応したプロ
ーブ変位機構への制御電圧を制御して、このプローブ電
極のみ所定距離だけ後退させる。しかる後に、再びプロ
ーブ電極群に対して記録媒体を接近開始させる。前記後
退させたプローブ電極を除いた残りのプローブ電極に関
して、同様に最初に前記閾値を越えたプローブ電極を後
退させ、再び記録媒体を接近させる。このステップを繰
り返して、ｍ×ｎ個のプローブ電極それぞれに流れる電
流が全て前記閾値を越えたら記録媒体の接近を停止す
る。The procedure for approaching the probe electrode is as follows. FIG. 4 is a flowchart showing this procedure in detail. These operation steps are performed based on a command from the microcomputer 9. First, while applying the same predetermined bias voltage to all the probe electrodes and monitoring the current flowing through each probe electrode,
The medium is roughly approached to a certain extent by the medium coarse movement mechanism 7, and then the spacing between the recording medium and the support of the probe electrode group is gradually approached by the medium fine movement mechanism 5. During the approach, the current detection circuit 11 individually detects the current flowing through each of the m × n probe electrodes. As approaching, the current value flowing through each probe electrode gradually increases. First, when one current of one of the probe electrodes exceeds a preset threshold value, the approach of the recording medium is temporarily stopped, and the control voltage to the probe displacement mechanism corresponding to the probe electrode exceeding the threshold value is controlled. Then, only this probe electrode is retracted by a predetermined distance. Thereafter, the recording medium starts to approach the probe electrode group again. With respect to the remaining probe electrodes excluding the retracted probe electrodes, the probe electrodes exceeding the threshold value are first retracted, and the recording medium is approached again. This step is repeated, and the approach of the recording medium is stopped when all the currents flowing through each of the m × n probe electrodes exceed the threshold.
【００２２】次いで、それぞれのプローブ電極に流れる
電流が前記閾値と等しくなるように各プローブ変位機構
への制御電圧を調整してその状態を保持する。これによ
って各々のプローブ電極先端と記録媒体との距離を全て
等しく保持することができる。Next, the control voltage to each probe displacement mechanism is adjusted so that the current flowing through each probe electrode becomes equal to the threshold value, and the state is maintained. As a result, the distance between the tip of each probe electrode and the recording medium can be kept equal.
【００２３】次に、各プローブ変位機構に印加保持され
ている制御電圧から各プローブ電極先端位置のＺ座標を
全て求めて記憶し、又、全プローブ電極のＺ座標の平均
値を求めてこれをＺ0 とする。Next, all the Z coordinates of the tip positions of the respective probe electrodes are obtained and stored from the control voltages applied to and held by the respective probe displacement mechanisms, and an average value of the Z coordinates of all the probe electrodes is obtained. Let it be Z 0 .
【００２４】ここまでの手順で全プローブ電極が記録媒
体表面に接近した状態では、全てのプローブ電極先端の
Ｚ座標は０もしくは負であるため、平均値Ｚ0 も負であ
る。そこで平均値Ｚ0 が０になるように、媒体微動機構
５もしくは媒体粗動機構７によって記録媒体をプローブ
電極に対して｜Ｚ0 ｜だけ遠ざかる向きに移動させる。
その状態で再びそれぞれのプローブ電極に流れる電流を
モニタしながら、それぞれのプローブ変位機構への制御
電圧を変化させて、プローブ電極に流れる電流が閾値に
等しくなったらその時の制御電圧を保持する。これによ
って、全てのプローブ電極先端位置の座標を０にすると
共に、各プローブ変位機構への制御電圧を０（プローブ
変位機構が無駆動状態）付近に分布させることができ
る。In the state in which all the probe electrodes have approached the surface of the recording medium in the procedure so far, the Z coordinate of the tip of all the probe electrodes is 0 or negative, so that the average value Z 0 is also negative. Thus, the recording medium is moved by | Z 0 | away from the probe electrode by the medium fine movement mechanism 5 or the medium coarse movement mechanism 7 so that the average value Z 0 becomes zero.
In this state, while monitoring the current flowing through each probe electrode again, the control voltage to each probe displacement mechanism is changed, and when the current flowing through the probe electrode becomes equal to the threshold, the control voltage at that time is held. As a result, the coordinates of all probe electrode tip positions can be set to 0, and the control voltage to each probe displacement mechanism can be distributed near 0 (the probe displacement mechanism is not driven).
【００２５】なお、上記実施例のプローブ接近方法の変
形例として、微動機構５、粗動機構７を用いずに、全て
のプローブ変位機構に等しい駆動電圧を印加して、各プ
ローブ電極先端を記録媒体表面へある程度まで等しく接
近させ、その後に上記実施例と同様の手順で操作を行な
うようにしても良い。As a modified example of the probe approach method of the above embodiment, the same drive voltage is applied to all the probe displacement mechanisms without using the fine movement mechanism 5 and the coarse movement mechanism 7, and the tip of each probe electrode is recorded. The medium may be evenly approached to a certain extent, and then the operation may be performed in the same procedure as in the above embodiment.
【００２６】以上の手順で操作を行なった後、各々のプ
ローブ電極と記録媒体との間の距離が何らかの理由で変
動した場合、この変動によって両者間を流れる電流も変
動する。よってこの電流の予め設定した閾値からのずれ
によってプローブ変位機構をフィードバック制御するこ
とによって、両者間の距離を常に一定に保つことができ
る。After the operation according to the above procedure, if the distance between each probe electrode and the recording medium fluctuates for some reason, the fluctuation causes the current flowing between them to fluctuate. Therefore, by performing feedback control of the probe displacement mechanism based on the deviation of the current from a preset threshold, the distance between the two can always be kept constant.
【００２７】以上の手順で記録媒体とプローブ電極先端
とを接近させて位置合わせを行なった後に、記録（消
去）、再生の動作を行なう。以下にその動作例を示す。After the recording medium and the tip of the probe electrode are brought close to each other and aligned with the above procedure, recording (erasing) and reproducing operations are performed. An example of the operation will be described below.
【００２８】全てのプローブ電極には０．５Ｖのバイア
ス電圧を印加しておき、また電流の閾値は３×１０-10
Ａに設定した。記録媒体をＸＹ面内で駆動しながら、個
々のプローブ電極に個別のビット情報（図６中の
（ａ））に基づいて生成された書込みパルス列（図６中
の（ｂ））を印加して書込みを行なった。ここでビット
情報の最初のビットは個々のビット情報全てについてＯ
Ｎ状態に対応するビットとしておいた。A bias voltage of 0.5 V is applied to all the probe electrodes, and the current threshold is 3 × 10 -10.
A was set. While driving the recording medium in the XY plane, a write pulse train ((b) in FIG. 6) generated based on individual bit information ((a) in FIG. 6) is applied to each probe electrode. Writing was performed. Here, the first bit of the bit information is O for all the individual bit information.
The bits correspond to the N state.
【００２９】書込みパルス印加後、再び書込み時と同じ
方法で記録媒体をＸＹ面内駆動して、バイアス電圧０．
５Ｖ印加の条件下でプローブ電極と記録媒体間を流れる
電流（トンネル電流）を測定したところ、４桁程度の電
流変化が各プローブ電極に対して得られた。これらの電
流測定値を二値化して得たパルス列は、各プローブ電極
に加えた個別のビット情報（第６図中の（ａ））に一致
し、記録情報の再生が確認された。After the application of the write pulse, the recording medium is again driven in the XY plane in the same manner as in the write operation, and the bias voltage is set to 0.
When the current (tunnel current) flowing between the probe electrode and the recording medium was measured under the condition of 5 V application, a current change of about four digits was obtained for each probe electrode. The pulse train obtained by binarizing these measured current values matched the individual bit information ((a) in FIG. 6) applied to each probe electrode, and it was confirmed that the recorded information was reproduced.
【００３０】次に、以上の操作で記録媒体上に書込んだ
個別のビット情報に基づいて図６中の（ｃ）に示すよう
な消去パルス列を生成した。ここで全てのビット情報に
対して最初のビットはＯＮのまま消去しないものとして
おく。書込み時と同じ方法で記録媒体をＸＹ面内で駆動
して電流を測定し、最初のビットすなわち最初に電流値
が４桁程度変化した位置で記録媒体の駆動を一次停止し
た。この時、初めに定めたビット情報の条件の通り、全
てのプローブ電極について４桁程度の変化が認められ
た。続いて媒体の駆動を再開し、これに同期させて先に
生成した個々のプローブ電極に対して、対応する個別の
消去パルス列を印加した。再び書込み時と同じ方法で記
録媒体をＸＹ面内で駆動して電流を測定して情報再生し
たところ、最初のビット以外は全てＯＦＦ状態、すなわ
ち３×１０-10 Ａ程度の電流値を示し、消去の完了が確
認された。Next, an erase pulse train as shown in FIG. 6C was generated based on the individual bit information written on the recording medium by the above operation. Here, it is assumed that the first bit of all the bit information remains ON and is not erased. The current was measured by driving the recording medium in the XY plane in the same manner as in writing, and the driving of the recording medium was temporarily stopped at the first bit, that is, at the position where the current value first changed by about four digits. At this time, according to the condition of the bit information initially determined, a change of about four digits was observed for all the probe electrodes. Subsequently, the drive of the medium was restarted, and in synchronization with this, a corresponding individual erase pulse train was applied to each of the previously generated probe electrodes. When the information was reproduced by driving the recording medium in the XY plane again and measuring the current in the same manner as at the time of writing, all the bits except the first bit showed an OFF state, that is, a current value of about 3 × 10 −10 A, Completion of erasure was confirmed.
【００３１】ここで使用した消去パルスに変えて、書込
みに用いたビット情報の内、最初のビットを除く任意の
ＯＮ状態のビットを選んで消去パルス列（図６中の
（ｄ））を生成し、前述の手順と同様にして消去実験を
行なったところ、選択したビットのみの消去が確認でき
た。Instead of the erase pulse used here, any bit in the ON state other than the first bit is selected from the bit information used for writing to generate an erase pulse train ((d) in FIG. 6). When an erase experiment was performed in the same manner as described above, it was confirmed that only selected bits were erased.
【００３２】［第２実施例］次に、所謂ＡＦＭの原理を
用いた情報記憶装置の実施例を説明する。本実施例では
プローブ電極を変位させる片持梁の撓みを光学的手法を
用いて検出して、プローブ先端と記録媒体との距離を得
ることを特徴とする。図５はその要部の概略を説明する
図であり、このような構成が図１のようにｍ×ｎ個設け
られている。なお、それぞれの片持梁には第１実施例と
同様、図２に示すようなプローブ変位機構が設けられて
いる。プローブ電極１を記録媒体４に非常に近接させる
と、プローブ電極と記録媒体表面の間に働く力（原子間
力）によって片持梁２に撓みが生じる。この撓み具合を
光学的に検出する。これはレーザ光源５０からのレーザ
ビームを光ファイバ５１で導いて、片持梁２の表面に対
して照射し、該レーザビームの反射ビームを２分割光セ
ンサ５２で受光し、各検出素子の出力をコンパレータ５
３で比較することによって、反射ビームのずれが分か
り、片持梁２の撓みを検出することができる。これは光
てこ法と呼ばれる手法である。なお、光てこ法には限ら
ず例えば光干渉を用いた測定法や、あるいは片持梁自体
に撓みを検出する機構を設けるなどして、光学的以外の
手法によって撓みを測定する構成としても良い。[Second Embodiment] Next, an embodiment of an information storage device using the so-called AFM principle will be described. The present embodiment is characterized in that the bending of the cantilever for displacing the probe electrode is detected by using an optical method to obtain the distance between the tip of the probe and the recording medium. FIG. 5 is a diagram for explaining the outline of the main part, and m × n such configurations are provided as shown in FIG. Each cantilever is provided with a probe displacement mechanism as shown in FIG. 2, as in the first embodiment. When the probe electrode 1 is brought very close to the recording medium 4, the cantilever 2 is bent by a force (atomic force) acting between the probe electrode and the recording medium surface. This degree of bending is optically detected. In this method, a laser beam from a laser light source 50 is guided by an optical fiber 51 to irradiate the surface of the cantilever 2, a reflected beam of the laser beam is received by a two-divided optical sensor 52, and the output of each detection element is output. To comparator 5
By comparing at 3, the deviation of the reflected beam can be known, and the deflection of the cantilever 2 can be detected. This is a technique called the optical lever method. The method is not limited to the optical lever method. For example, a measuring method using optical interference, or a mechanism for detecting bending in the cantilever itself may be used to measure the bending by a method other than optical. .
【００３３】全体の装置構成は図３とほぼ同様である。
プローブ電極の接近方法の手順は、上記第１実施例にお
ける電流検出を、力の検出すなわち片持梁の撓みを検出
に変えた以外は同様である。これらの動作ステップはマ
イクロコンピュータ９の指令に基づいてなされる。始め
に媒体粗動機構７によってある程度まで大まかに接近さ
せ、次に媒体微動機構５によって記録媒体とプローブ電
極群の支持体との間隔を僅かずつ接近させる。接近させ
る最中、ｍ×ｎ個のプローブ電極のそれぞれを変位させ
る片持梁の撓みを個別に検出する。接近するにつれて各
片持梁のたわみが徐々に増加する。最初にいずれかの片
持梁のたわみが予め設定した閾値を越えた時、記録媒体
の接近を一旦停止させ、前記閾値を越えた片持梁に対応
したプローブ変位機構への制御電圧を制御して、このプ
ローブ電極のみ所定距離だけ後退させる。しかる後に、
再びプローブ電極群に対して記録媒体を接近開始させ
る。前記後退させたプローブ電極を除いた残りのプロー
ブ電極に関して、同様に最初に前記閾値を越えたプロー
ブ電極を後退させ、再び記録媒体を接近させる。このス
テップを繰り返して、ｍ×ｎ個のプローブ電極それぞれ
を変位させる片持梁のたわみが全て前記閾値を越えたら
記録媒体の接近を停止する。The overall configuration of the apparatus is substantially the same as that of FIG.
The procedure of the approach method of the probe electrode is the same except that the current detection in the first embodiment is changed to the detection of force, that is, the detection of bending of the cantilever. These operation steps are performed based on a command from the microcomputer 9. First, the medium is roughly moved to a certain extent by the medium coarse movement mechanism 7, and then the distance between the recording medium and the support of the probe electrode group is made slightly closer by the medium fine movement mechanism 5. During the approach, the bending of the cantilever that displaces each of the m × n probe electrodes is individually detected. The deflection of each cantilever gradually increases as it approaches. First, when the deflection of any of the cantilevers exceeds a preset threshold, the approach of the recording medium is temporarily stopped, and the control voltage to the probe displacement mechanism corresponding to the cantilever exceeding the threshold is controlled. Then, only this probe electrode is retracted by a predetermined distance. After a while
The recording medium is started to approach the probe electrode group again. With respect to the remaining probe electrodes excluding the retracted probe electrodes, the probe electrodes exceeding the threshold value are first retracted, and the recording medium is approached again. This step is repeated, and the approach of the recording medium is stopped when the deflection of the cantilever for displacing each of the m × n probe electrodes exceeds the threshold value.
【００３４】次いで、それぞれのプローブ電極を変位さ
せる各片持梁の撓みをモニタしながら、各プローブ変位
機構への制御電圧を調整し、媒体とプローブ電極の間に
力を作用しない状態で予め求めておいた片持梁の撓みと
プローブ変位機構への制御電圧との関係からずれを検出
する。このずれは媒体とプローブ電極の間に作用する力
によるものであって、所定の力が作用した際のずれを生
じる状態まで各プローブ変位機構への制御電圧を調整
し、その状態を保持する。これによって各々のプローブ
電極先端と記録媒体との距離を全て等しく設定すること
ができる。Next, while monitoring the deflection of each cantilever for displacing each probe electrode, the control voltage to each probe displacement mechanism is adjusted, and the control voltage is obtained in advance in a state where no force acts between the medium and the probe electrode. A deviation is detected from the relationship between the deflection of the cantilever and the control voltage applied to the probe displacement mechanism. This displacement is due to the force acting between the medium and the probe electrode. The control voltage to each probe displacement mechanism is adjusted until the displacement occurs when a predetermined force is applied, and that condition is maintained. As a result, the distance between the tip of each probe electrode and the recording medium can all be set equal.
【００３５】次に、各プローブ変位機構に印加保持され
ている制御電圧から各プローブ電極先端位置のＺ座標を
全て求めて記憶し、又、全プローブ電極のＺ座標の平均
値を求めてこれをＺ0 とする。Next, all the Z coordinates of the tip positions of the probe electrodes are obtained and stored from the control voltage applied to and held by each probe displacement mechanism, and the average value of the Z coordinates of all the probe electrodes is obtained. Let it be Z 0 .
【００３６】ここまでの手順で全プローブ電極が記録媒
体表面に接近した状態では、全てのプローブ電極先端の
Ｚ座標は０もしくは負であるため、平均値Ｚ0 も負であ
る。そこで平均値Ｚ0 が０になるように、媒体微動機構
５もしくは媒体粗動機構７によって記録媒体をプローブ
電極に対して｜Ｚ0 ｜だけ遠ざかる向きに移動させる。
その状態で再びそれぞれの片持梁の撓みをモニタしなが
ら、それぞれのプローブ変位機構への制御電圧を変化さ
せて、プローブ電極と媒体間に作用する力が所定の値に
等しくなったらその時の制御電圧を保持する。これによ
って、全てのプローブ電極先端位置の座標を０にすると
共に、各プローブ変位機構への制御電圧を０（プローブ
変位機構が無駆動状態）付近に分布させることができ
る。With all the probe electrodes approaching the surface of the recording medium in the procedure up to this point, the Z coordinate of all the probe electrode tips is 0 or negative, so the average value Z 0 is also negative. Thus, the recording medium is moved by | Z 0 | away from the probe electrode by the medium fine movement mechanism 5 or the medium coarse movement mechanism 7 so that the average value Z 0 becomes zero.
In this state, while monitoring the bending of each cantilever again, the control voltage to each probe displacement mechanism is changed, and when the force acting between the probe electrode and the medium becomes equal to a predetermined value, the control at that time is performed. Hold voltage. As a result, the coordinates of all probe electrode tip positions can be set to 0, and the control voltage to each probe displacement mechanism can be distributed near 0 (the probe displacement mechanism is not driven).
【００３７】なお、上記実施例のプローブ接近方法の変
形例として、微動機構５、粗動機構７を用いずに、全て
のプローブ変位機構に等しい駆動電圧を印加して、各プ
ローブ電極先端を記録媒体表面へある程度まで等しく接
近させ、その後に上記実施例と同様の手順で操作を行な
うようにしても良い。As a modification of the probe approach method of the above embodiment, the same drive voltage is applied to all the probe displacement mechanisms without using the fine movement mechanism 5 and the coarse movement mechanism 7, and the tip of each probe electrode is recorded. The medium may be evenly approached to a certain extent, and then the operation may be performed in the same procedure as in the above embodiment.
【００３８】以上の手順で操作を行なった後、各々のプ
ローブ電極と記録媒体との間の距離が何らかの理由で変
動した場合、この変動によって両者間に作用する力も変
動する。よってこの力の変動による片持梁の撓みの予め
設定した閾値からのずれによってプローブ変位機構をフ
ィードバック制御することによって、両者間の距離を常
に一定に保つことができる。If the distance between each probe electrode and the recording medium fluctuates for some reason after the above procedure, the force acting between them fluctuates. Therefore, by performing feedback control of the probe displacement mechanism based on the deviation of the deflection of the cantilever from a preset threshold value due to the fluctuation of the force, the distance between the two can always be kept constant.
【００３９】以上の手順で記録媒体とプローブ電極先端
とを接近させて位置合わせを行なった後に、記録（消
去）、再生の動作を行なう。以下にその動作例を示す。After the recording medium and the tip of the probe electrode are brought close to each other and aligned according to the above procedure, recording (erasing) and reproducing operations are performed. An example of the operation will be described below.
【００４０】本実施例では書込み時にバイアス電圧の印
加は特に行なわない。プローブ電極と媒体間に作用する
力の閾値は１×１０-8に設定した。記録媒体をＸＹ面内
で駆動しながら、個々のプローブ電極に個別のビット情
報（図６中の（ａ））に基づいて生成された書込みパル
ス列（図６中の（ｂ））を印加して書込みを行なった。
ここでビット情報の最初のビットは個々のビット情報全
てについてＯＮ状態に対応するビットとしておいた。In this embodiment, no bias voltage is applied during writing. The threshold value of the force acting between the probe electrode and the medium was set at 1 × 10 −8 . While driving the recording medium in the XY plane, a write pulse train ((b) in FIG. 6) generated based on individual bit information ((a) in FIG. 6) is applied to each probe electrode. Writing was performed.
Here, the first bit of the bit information is set as the bit corresponding to the ON state for all the individual bit information.
【００４１】書込みパルス印加後、再び書込み時と同じ
方法で記録媒体をＸＹ面内駆動して、バイアス電圧０．
１Ｖ印加の条件下でプローブ電極と記録媒体間を流れる
電流（トンネル電流）を測定したところ、４桁程度の電
流変化が各プローブ電極に対して得られた。これらの電
流測定値を二値化して得たパルス列は、各プローブ電極
に加えた個別のビット情報（第６図中の（ａ））に一致
し、記録情報の再生が確認された。After the application of the write pulse, the recording medium is driven again in the XY plane in the same manner as in the write operation, and the bias voltage is set to 0.
When the current (tunnel current) flowing between the probe electrode and the recording medium was measured under the condition of 1 V application, a current change of about four digits was obtained for each probe electrode. The pulse train obtained by binarizing these measured current values matched the individual bit information ((a) in FIG. 6) applied to each probe electrode, and it was confirmed that the recorded information was reproduced.
【００４２】次に、以上の操作で記録媒体上に書込んだ
個別のビット情報に基づいて図６中の（ｃ）に示すよう
な消去パルス列を生成した。ここで全てのビット情報に
対して最初のビットはＯＮのまま消去しないものとして
おく。書込み時と同じ方法で記録媒体をＸＹ面内で駆動
して電流を測定し、最初のビットすなわち最初に電流値
が４桁程度変化した位置で記録媒体の駆動を一次停止し
た。この時、初めに定めたビット情報の条件の通り、全
てのプローブ電極について４桁程度の変化が認められ
た。続いて媒体の駆動を再開し、これに同期させて先に
生成した個々のプローブ電極に対して、対応する個別の
消去パルス列を印加した。再び書込み時と同じ方法で記
録媒体をＸＹ面内で駆動して電流を測定して情報再生し
たところ、最初のビット以外は全てＯＦＦ状態、すなわ
ち１×１０-10 Ａ程度の電流値を示し、消去の完了が確
認された。Next, an erasing pulse train as shown in FIG. 6C was generated based on the individual bit information written on the recording medium by the above operation. Here, it is assumed that the first bit of all the bit information remains ON and is not erased. The current was measured by driving the recording medium in the XY plane in the same manner as in writing, and the driving of the recording medium was temporarily stopped at the first bit, that is, at the position where the current value first changed by about four digits. At this time, according to the condition of the bit information initially determined, a change of about four digits was observed for all the probe electrodes. Subsequently, the drive of the medium was restarted, and in synchronization with this, a corresponding individual erase pulse train was applied to each of the previously generated probe electrodes. When the information was reproduced by driving the recording medium in the XY plane again and measuring the current in the same manner as at the time of writing, all the bits except the first bit showed an OFF state, that is, a current value of about 1 × 10 −10 A, Completion of erasure was confirmed.
【００４３】ここで使用した消去パルスに変えて、書込
みに用いたビット情報の内、最初のビットを除く任意の
ＯＮ状態のビットを選んで消去パルス列（図６中の
（ｄ））を生成し、前述の手順と同様にして消去実験を
行なったところ、選択したビットのみの消去が確認でき
た。Instead of the erase pulse used here, any bit in the ON state other than the first bit is selected from the bit information used for writing to generate an erase pulse train ((d) in FIG. 6). When an erase experiment was performed in the same manner as described above, it was confirmed that only selected bits were erased.
【００４４】［第３実施例］上記第２実施例において、
プローブ電極を接近させる際、各プローブ電極に等しい
バイアス電圧を印加し、光てこ法によって片持梁の撓み
を検出すると同時にプローブ電極と媒体との間に流れる
電流の測定を行ない、図７に示すような媒体とプローブ
電極との距離に対する力と電流の関係を得る。これによ
ってプローブ電極と媒体との間に流れる電流から両者間
に作用する力を得ることができる。[Third Embodiment] In the second embodiment,
When approaching the probe electrodes, an equal bias voltage is applied to each probe electrode, and the deflection of the cantilever is detected by the optical lever method, and at the same time, the current flowing between the probe electrode and the medium is measured, as shown in FIG. The relationship between the force and the current with respect to the distance between the medium and the probe electrode is obtained. Thus, a force acting between the probe electrode and the medium can be obtained from the current flowing between the two.
【００４５】次に、光てこ法による片持梁の撓みを検出
は行なわずに、プローブ電極と媒体間に流れる電流のモ
ニタするだけでプローブ電極の記録媒体での接近を行な
う。この際、プローブ電極に加えるバイアス電圧は、先
に力と電流の関係を求めた時のバイアス電圧と同一に設
定する。プローブ電極の接近の手順は第１実施例と同様
であるが、閾値電流は所定の力に対応する値に設定す
る。始めに全てのプローブ電極に等しい所定のバイアス
電圧を印加し、それぞれのプローブ電極に流れる電流を
モニタしながら、媒体粗動機構７によってある程度まで
大まかに接近させ、次に媒体微動機構５によって記録媒
体とプローブ電極群の支持体との間隔を僅かずつ接近さ
せる。接近させる最中、電流検出回路１１において、ｍ
×ｎ個のプローブ電極のそれぞれに流れる電流を個別に
検出する。接近するにつれて各プローブ電極に流れる電
流値が徐々に増加する。最初にいずれかのプローブ電極
の１つの電流が予め設定した閾値を越えた時、記録媒体
の接近を一旦停止させ、前記閾値を越えたプローブ電極
に対応したプローブ変位機構への制御電圧を制御して、
このプローブ電極のみ所定距離だけ後退させる。しかる
後に、再びプローブ電極群に対して記録媒体を接近開始
させる。前記後退させたプローブ電極を除いた残りのプ
ローブ電極に関して、同様に最初に前記閾値を越えたプ
ローブ電極を後退させ、再び記録媒体を接近させる。こ
のステップを繰り返して、ｍ×ｎ個のプローブ電極それ
ぞれに流れる電流が全て前記閾値を越えたら記録媒体の
接近を停止する。Next, the probe electrode approaches the recording medium only by monitoring the current flowing between the probe electrode and the medium without detecting the bending of the cantilever by the optical lever method. At this time, the bias voltage applied to the probe electrode is set to be the same as the bias voltage when the relationship between the force and the current was previously obtained. The procedure for approaching the probe electrode is the same as in the first embodiment, except that the threshold current is set to a value corresponding to a predetermined force. First, while applying a predetermined bias voltage equal to all the probe electrodes and monitoring the current flowing through each probe electrode, the medium is roughly approached to some extent by the medium coarse movement mechanism 7, and then the recording medium is moved by the medium fine movement mechanism 5. And the distance between the probe electrode group and the support of the probe electrode group are gradually reduced. While approaching, in the current detection circuit 11, m
The current flowing through each of the × n probe electrodes is individually detected. As approaching, the current value flowing through each probe electrode gradually increases. First, when one current of one of the probe electrodes exceeds a preset threshold value, the approach of the recording medium is temporarily stopped, and the control voltage to the probe displacement mechanism corresponding to the probe electrode exceeding the threshold value is controlled. hand,
Only this probe electrode is retracted by a predetermined distance. Thereafter, the recording medium starts to approach the probe electrode group again. With respect to the remaining probe electrodes excluding the retracted probe electrodes, the probe electrodes exceeding the threshold value are first retracted, and the recording medium is approached again. This step is repeated, and the approach of the recording medium is stopped when all the currents flowing through each of the m × n probe electrodes exceed the threshold.
【００４６】次いで、それぞれのプローブ電極に流れる
電流が前記閾値と等しくなるように各プローブ変位機構
への制御電圧を調整してその状態を保持する。これによ
って各々のプローブ電極先端と記録媒体との距離を全て
等しく保持することができる。Next, the control voltage to each probe displacement mechanism is adjusted so that the current flowing through each probe electrode becomes equal to the threshold value, and the state is maintained. As a result, the distance between the tip of each probe electrode and the recording medium can be kept equal.
【００４７】次に、各プローブ変位機構に印加保持され
ている制御電圧から各プローブ電極先端位置のＺ座標を
全て求めて記憶し、又、全プローブ電極のＺ座標の平均
値を求めてこれをＺ0 とする。Next, all the Z coordinates of each probe electrode tip position are obtained and stored from the control voltage applied to and held by each probe displacement mechanism, and the average value of the Z coordinates of all the probe electrodes is obtained and stored. Let it be Z 0 .
【００４８】ここまでの手順で全プローブ電極が記録媒
体表面に接近した状態では、全てのプローブ電極先端の
Ｚ座標は０もしくは負であるため、平均値Ｚ0 も負であ
る。そこで平均値Ｚ0 が０になるように、媒体微動機構
５もしくは媒体粗動機構７によって記録媒体をプローブ
電極に対して｜Ｚ0 ｜だけ遠ざかる向きに移動させる。
その状態で再びそれぞれのプローブ電極に流れる電流を
モニタしながら、それぞれのプローブ変位機構への制御
電圧を変化させて、プローブ電極に流れる電流が閾値に
等しくなったらその時の制御電圧を保持する。これによ
って、全てのプローブ電極先端位置の座標を０にすると
共に、各プローブ変位機構への制御電圧を０（プローブ
変位機構が無駆動状態）付近に分布させることができ
る。In the state in which all the probe electrodes have approached the surface of the recording medium in the procedure so far, the Z coordinate of all the probe electrode tips is 0 or negative, and therefore the average value Z 0 is also negative. Thus, the recording medium is moved by | Z 0 | away from the probe electrode by the medium fine movement mechanism 5 or the medium coarse movement mechanism 7 so that the average value Z 0 becomes zero.
In this state, while monitoring the current flowing through each probe electrode again, the control voltage to each probe displacement mechanism is changed, and when the current flowing through the probe electrode becomes equal to the threshold, the control voltage at that time is held. As a result, the coordinates of all probe electrode tip positions can be set to 0, and the control voltage to each probe displacement mechanism can be distributed near 0 (the probe displacement mechanism is not driven).
【００４９】なお、上記実施例のプローブ接近方法の変
形例として、微動機構５、粗動機構７を用いずに、全て
のプローブ変位機構に等しい駆動電圧を印加して、各プ
ローブ電極先端を記録媒体表面へある程度まで等しく接
近させ、その後に上記実施例と同様の手順で操作を行な
うようにしても良い。As a modification of the probe approach method of the above embodiment, the same drive voltage is applied to all the probe displacement mechanisms without using the fine movement mechanism 5 and the coarse movement mechanism 7, and the tip of each probe electrode is recorded. The medium may be evenly approached to a certain extent, and then the operation may be performed in the same procedure as in the above embodiment.
【００５０】以上の手順の操作を行なった後、各々のプ
ローブ電極と記録媒体との間の距離が変動した場合、こ
の変動によって両者間に作用する力も変動するため、所
定の力からのずれによってプローブ変位機構をフィード
バックすることによって、両者間の距離を一定に保つこ
とができるが、特にプローブ電極が、媒体との間に斥力
が作用するまで接近した状態ではフィードバック制御す
ることなく全てのプローブ電極と媒体との距離が一定に
保持される。When the distance between each probe electrode and the recording medium fluctuates after performing the above-described procedure, the force acting between the probe electrode and the recording medium fluctuates due to the fluctuation. By feeding back the probe displacement mechanism, the distance between the two can be kept constant, but especially when the probe electrode is close to the medium until a repulsive force acts, all the probe electrodes are not feedback-controlled. The distance between the media and the medium is kept constant.
【００５１】以上の手順で記録媒体とプローブ電極先端
とを接近させて位置合わせを行なった後に、記録（消
去）、再生の動作を行なう。以下にその動作例を示す。After the recording medium and the tip of the probe electrode are brought close to each other and aligned according to the above procedure, recording (erasing) and reproducing operations are performed. An example of the operation will be described below.
【００５２】全てのプローブ電極には０．１Ｖのバイア
ス電圧を印加しておき、また電流の閾値は図７における
領域（ａ）に対応する１０-9Ａに設定した。すなわちプ
ローブ電極と媒体間には斥力が作用しており、フィード
バック制御なしで距離が一定に保持される。記録媒体を
ＸＹ面内で駆動しながら、個々のプローブ電極に個別の
ビット情報（図６中の（ａ））に基づいて生成された書
込みパルス列（図６中の（ｂ））を印加して書込みを行
なった。ここでビット情報の最初のビットは個々のビッ
ト情報全てについてＯＮ状態に対応するビットとしてお
いた。A bias voltage of 0.1 V was applied to all the probe electrodes, and the threshold value of the current was set to 10 -9 A corresponding to the region (a) in FIG. That is, a repulsive force acts between the probe electrode and the medium, and the distance is kept constant without feedback control. While driving the recording medium in the XY plane, a write pulse train ((b) in FIG. 6) generated based on individual bit information ((a) in FIG. 6) is applied to each probe electrode. Writing was performed. Here, the first bit of the bit information is set as the bit corresponding to the ON state for all the individual bit information.
【００５３】書込みパルス印加後、再び書込み時と同じ
方法で記録媒体をＸＹ面内駆動して、バイアス電圧０．
１Ｖ印加の条件下でプローブ電極と記録媒体間を流れる
電流（トンネル電流）を測定したところ、４桁程度の電
流変化が各プローブ電極に対して得られた。これらの電
流測定値を二値化して得たパルス列は、各プローブ電極
に加えた個別のビット情報（第６図中の（ａ））に一致
し、記録情報の再生が確認された。After the application of the write pulse, the recording medium is again driven in the XY plane in the same manner as in the write operation, and the bias voltage is set to 0.
When the current (tunnel current) flowing between the probe electrode and the recording medium was measured under the condition of 1 V application, a current change of about four digits was obtained for each probe electrode. The pulse train obtained by binarizing these measured current values matched the individual bit information ((a) in FIG. 6) applied to each probe electrode, and it was confirmed that the recorded information was reproduced.
【００５４】次に、以上の操作で記録媒体上に書込んだ
個別のビット情報に基づいて図６中の（ｃ）に示すよう
な消去パルス列を生成した。ここで全てのビット情報に
対して最初のビットはＯＮのまま消去しないものとして
おく。書込み時と同じ方法で記録媒体をＸＹ面内で駆動
して電流を測定し、最初のビットすなわち最初に電流値
が４桁程度変化した位置で記録媒体の駆動を一次停止し
た。この時、初めに定めたビット情報の条件の通り、全
てのプローブ電極について４桁程度の変化が認められ
た。続いて媒体の駆動を再開し、これに同期させて先に
生成した個々のプローブ電極に対して、対応する個別の
消去パルス列を印加した。再び書込み時と同じ方法で記
録媒体をＸＹ面内で駆動して電流を測定して情報再生し
たところ、最初のビット以外は全てＯＦＦ状態、すなわ
ち１０-9Ａ程度の電流値を示し、消去の完了が確認され
た。Next, an erase pulse train as shown in FIG. 6C was generated based on the individual bit information written on the recording medium by the above operation. Here, it is assumed that the first bit of all the bit information remains ON and is not erased. The current was measured by driving the recording medium in the XY plane in the same manner as in writing, and the driving of the recording medium was temporarily stopped at the first bit, that is, at the position where the current value first changed by about four digits. At this time, according to the condition of the bit information initially determined, a change of about four digits was observed for all the probe electrodes. Subsequently, the drive of the medium was restarted, and in synchronization with this, a corresponding individual erase pulse train was applied to each of the previously generated probe electrodes. When the information was reproduced by driving the recording medium in the XY plane again and measuring the current in the same manner as at the time of writing, all the bits except the first bit showed an OFF state, that is, a current value of about 10 -9 A. Completion confirmed.
【００５５】ここで使用した消去パルスに変えて、書込
みに用いたビット情報の内、最初のビットを除く任意の
ＯＮ状態のビットを選んで消去パルス列（図６中の
（ｄ））を生成し、前述の手順と同様にして消去実験を
行なったところ、選択したビットのみの消去が確認でき
た。Instead of the erase pulse used here, any bit in the ON state other than the first bit is selected from the bit information used for writing to generate an erase pulse train ((d) in FIG. 6). When an erase experiment was performed in the same manner as described above, it was confirmed that only selected bits were erased.
【００５６】[0056]
【発明の効果】以上本発明によれば、プローブ電極それ
ぞれに設けられたプローブ変位機構の無駆動時からの変
位を０付近に分布させ、いずれかの向きへの偏りの無い
状態で、全てのプローブ電極を記録媒体表面の極く近傍
まで接近させることが可能となり、これによってプロー
ブ電極製造時のプローブ先端位置のばらつき、あるいは
記録媒体表面が不均一であっても、その影響を受けずに
補償可能である。As described above, according to the present invention, the displacement of the probe displacement mechanism provided for each of the probe electrodes from the non-driving state is distributed near zero, and all the displacements are performed without any bias in any direction. The probe electrode can be brought as close as possible to the surface of the recording medium, thereby compensating for variations in the position of the probe tip during the manufacture of the probe electrode or uneven recording medium surface without being affected by it. It is possible.
【図１】本発明実施例の記録ヘッド部の構成図である。FIG. 1 is a configuration diagram of a recording head unit according to an embodiment of the present invention.
【図２】プローブ電極の詳細図である。FIG. 2 is a detailed view of a probe electrode.
【図３】実施例の情報記憶装置の全体構成図である。FIG. 3 is an overall configuration diagram of an information storage device according to an embodiment.
【図４】実施例の装置の動作を示すフローチャート図で
ある。FIG. 4 is a flowchart showing the operation of the apparatus of the embodiment.
【図５】本発明の第２実施例の光てこ法の説明図であ
る。FIG. 5 is an explanatory diagram of an optical lever method according to a second embodiment of the present invention.
【図６】実施例の記録（消去）・再生動作で１本のプロ
ーブ電極に加えたパルス列を示す図である。FIG. 6 is a diagram showing a pulse train applied to one probe electrode in a recording (erasing) / reproducing operation of the example.
【図７】第３実施例中のプローブ電極と媒体との距離に
対する、両者間に作用する力および両者間に流れる電流
の関係を示す図である。FIG. 7 is a diagram showing a relationship between a force acting between the probe electrode and a medium and a current flowing between the two with respect to a distance between a probe electrode and a medium in the third embodiment.
１ プローブ電極 ２ プローブ変位機構 ３ 支持体 ４ 記録媒体 ５ 媒体微動機構 ７ 媒体粗動機構 ９ マイクロコンピュータ １１ 電流検出回路 １２ 電圧印加回路 Reference Signs List 1 probe electrode 2 probe displacement mechanism 3 support 4 recording medium 5 medium fine movement mechanism 7 medium coarse movement mechanism 9 microcomputer 11 current detection circuit 12 voltage application circuit
───────────────────────────────────────────────────── フロントページの続き (72)発明者 黒田 亮 東京都大田区下丸子３丁目30番２号キヤ ノン株式会社内 (58)調査した分野(Int.Cl.6，ＤＢ名) G11B 9/00 G01N 37/00 G11B 9/04 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Ryo Kuroda, inventor Canon Inc. 3- 30-2 Shimomaruko, Ota-ku, Tokyo (58) Fields investigated (Int. Cl. 6 , DB name) G11B 9/00 G01N 37/00 G11B 9/04
Claims (7)
ローブ、 該複数のプローブを媒体に対向して並列に配置して一体
的に支持する支持手段、 前記媒体と前記支持手段との間隔を調整する調整手段、 前記媒体と前記各プローブ先端との間隔を独立に調整す
るために、各プローブを独立に間隔方向に変位させる変
位手段、 前記媒体と前記各プローブ先端との間隔が全て等しくな
るように前記変位手段を制御し、その際の前記複数のプ
ローブの変位量の平均が実質的に０となるように前記調
整手段を制御する制御手段、 前記プローブを用いて媒体に記録及び／又は再生を行な
う手段、 を有することを特徴とする情報記憶装置。1. A plurality of probes for recording and / or reproducing information, supporting means for arranging the plurality of probes in parallel in opposition to a medium and integrally supporting them, and a distance between the medium and the supporting means. Adjusting means for adjusting the distance between the medium and the tip of each probe, and displacing means for independently displacing each probe in the interval direction in order to independently adjust the distance between the medium and the tip of each probe. Control means for controlling the displacement means so that the average of the displacement amounts of the plurality of probes at that time becomes substantially zero; and recording and / or recording on a medium using the probe. Or means for reproducing, an information storage device.
する手段を有する請求項１記載の装置。2. The apparatus according to claim 1, further comprising means for applying a voltage between said probe and a medium.
与えた際に流れる電流によって検知する手段を有する請
求項２記載の装置。3. The apparatus according to claim 2, further comprising means for detecting a distance between the probe and the medium by a current flowing when the voltage is applied.
記載の装置。4. The current according to claim 3, wherein the current is a tunnel current.
The described device.
用する力によって検知する手段を有する請求項１記載の
装置。5. The apparatus according to claim 1, further comprising means for detecting a distance between the probe and the medium by a force acting between the two.
載の装置。6. The device according to claim 5, wherein the acting force is a repulsive force.
つ各々独立に変位可能な複数のプローブの各プローブ先
端と、媒体との間隔が全て等しくなるように、前記各ブ
ローブに個別にオフセット変位を与えるステップ、 その際に前記各プローブのオフセット変位量の平均が実
質的に０となるように、前記支持部材と前記媒体との間
隔を調整するステップ、 上記ステップの後に、前記各プローブと媒体との間に電
圧を印加することによって情報の記録及び／又は再生を
行なうステップ、を有することを特徴とする情報記録及
び／又は再生の方法。7. An offset displacement is individually applied to each probe so that the distance between each probe tip of a plurality of probes, which are integrally supported by a support member and can be independently displaced, and the medium is all equal. Providing, adjusting the distance between the support member and the medium such that the average of the offset displacement amounts of the respective probes is substantially 0 at that time; Recording and / or reproducing information by applying a voltage during the recording.
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17679491A JP2942011B2 (en) | 1991-07-17 | 1991-07-17 | Information storage device |
| AT98111158T ATE225557T1 (en) | 1991-07-17 | 1992-07-15 | INFORMATION RECORDING/REPRODUCING APPARATUS OR METHOD FOR RECORDING/REPRODUCING INFORMATION TO/FROM AN INFORMATION RECORDING MEDIUM USING A MULTIPLE PROBE ELECTRODES |
| AT92112106T ATE186151T1 (en) | 1991-07-17 | 1992-07-15 | INFORMATION RECORDING/REPRODUCING DEVICE FOR RECORDING AND/OR REPRODUCING INFORMATION TO/FROM AN INFORMATION RECORDING MEDIUM BY USING A PROBE. |
| ES92112106T ES2137167T3 (en) | 1991-07-17 | 1992-07-15 | APPARATUS FOR THE RECORDING / REPRODUCTION OF INFORMATION, FOR THE RECORDING AND / OR REPRODUCTION OF INFORMATION ON A SUPPORT FOR RECORDING INFORMATION BY MEANS OF A PROBE ELECTRODE. |
| EP92112106A EP0523676B1 (en) | 1991-07-17 | 1992-07-15 | Information recording/reproducing apparatus for recording and/or reproducing information on information recording carrier by use of a probe electrode. |
| DE69230198T DE69230198T2 (en) | 1991-07-17 | 1992-07-15 | Information recording / reproducing apparatus for recording and / or reproducing information on / from an information recording medium by using a probe. |
| EP98111158A EP0871165B1 (en) | 1991-07-17 | 1992-07-15 | Information recording/reproducing apparatus and method for recording and/or reproducing information on information recording carrier by use of probe electrode |
| DE69232806T DE69232806T2 (en) | 1991-07-17 | 1992-07-15 | Information recording / reproducing apparatus or method for information recording / reproducing on / from an information recording medium using a plurality of probe electrodes |
| CA002073919A CA2073919C (en) | 1991-07-17 | 1992-07-15 | Multiple probe electrode arrangement for scanning tunnelling microscope recording and reading |
| US08/381,289 US5461605A (en) | 1991-07-17 | 1995-01-31 | Information recording/reproducing method, recording carrier and apparatus for recording and/or reproducing information on information recording carrier by use of probe electrode |
| US08/483,862 US5610898A (en) | 1991-07-17 | 1995-06-07 | Information recording/reproducing method for recording and/or reproducing information on information recording carrier by use of probe electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17679491A JP2942011B2 (en) | 1991-07-17 | 1991-07-17 | Information storage device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0528550A JPH0528550A (en) | 1993-02-05 |
| JP2942011B2 true JP2942011B2 (en) | 1999-08-30 |
Family
ID=16019962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17679491A Expired - Fee Related JP2942011B2 (en) | 1991-07-17 | 1991-07-17 | Information storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2942011B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4695647B2 (en) | 2005-07-26 | 2011-06-08 | パイオニア株式会社 | Drive device |
-
1991
- 1991-07-17 JP JP17679491A patent/JP2942011B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0528550A (en) | 1993-02-05 |
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