JPH04196246A - Dicing die-bond film - Google Patents

Dicing die-bond film

Info

Publication number
JPH04196246A
JPH04196246A JP2328186A JP32818690A JPH04196246A JP H04196246 A JPH04196246 A JP H04196246A JP 2328186 A JP2328186 A JP 2328186A JP 32818690 A JP32818690 A JP 32818690A JP H04196246 A JPH04196246 A JP H04196246A
Authority
JP
Japan
Prior art keywords
adhesive layer
adhesive
bonding
bond
bonding layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2328186A
Other languages
Japanese (ja)
Inventor
Yuzo Akata
祐三 赤田
Mitsuharu Akazawa
光治 赤沢
Keiji Nakamoto
中本　啓次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP2328186A priority Critical patent/JPH04196246A/en
Publication of JPH04196246A publication Critical patent/JPH04196246A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To enable a semiconductor wafer to be fixed by sufficient supporting force also to be released smoothly in excellent release properties in the dicing step into chips by a method wherein the title dicing die-bond film is structured of an adhesive layer, the first and second bonding layers further to be released from the part between the first bonding layer and the adhesive layer. CONSTITUTION:A supporting substrate 1 works as a strength parent body of a dicing die-bond film while an adhesive layer 2 supports the first and second bonding layers 3, 4 for sticking a formed chip to a coated body holding excellent balance of bond and release properties. The first bonding layer 3 makes the formed chip firmly bond onto the coated body even at the low temperature not exceeding 200 deg.C while performing the thermal bonding step in high temperature bond strength together with the second bonding layer 4. On the other hand, the first bonding layer 3 displaying no bonding properties at the near normal temperature, i.e., having excellent release properties from the bonding layer so as to make the smooth mounting step feasible while the second bonding layer 4 firmly supports a semiconductor wafer by the bond properties thereof. Through these procedures, the title dicing die-bond film holding the excellent balance of the supporting force of the semiconductor wafer in the dicing step and the release properties from the bonding layer for fixing the formed chip can be manufactured.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体ウニノ＼を分断して形成チップを被着
体に耐熱性よ（固着できるようにして製造工程の簡略化
を可能にしたダイシング・グイボンドフィルムに関する
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is a dicing method that simplifies the manufacturing process by dividing a semiconductor chip and making it possible to heat-resistantly (fix) the formed chip to an adherend. Regarding Guibond film.

従来の技術 回路パターン形成の半導体ウニｌ＼は、必要に応じて裏
面研摩による厚さ調整後チップに分断され〈ダイシング
工程）、形成チップを接着剤にて被着体に固着後（マウ
ント工程）、ボンディング工程に移される。ダイシング
工程では切断屑の除去等のため半導体ウェハを適度な液
圧（通常、２ｋｇＺ−程度）で洗浄することが通例であ
る。Conventional technology Semiconductor urchins for forming circuit patterns are divided into chips after adjusting the thickness by back polishing as necessary (dicing process), and after fixing the formed chips to an adherend with adhesive (mounting process) , then transferred to the bonding process. In the dicing process, it is customary to wash the semiconductor wafer with an appropriate hydraulic pressure (usually about 2 kgZ-) to remove cutting debris and the like.

前記において、接着剤を形成チップに別途塗布する方法
では、接着層厚の均一化が困難なこと、接着剤の塗布に
特殊装置と多時間を要することから、分断のため半導体
ウェハを保持する際にチップ固着用の接着層を付与して
工程を簡略化しうるダイシング・ダイボンドフィルムが
提案されている（特開昭６０−５７６４２号公報）。こ
のダイシング・ダイボンドフィルムは、支持基材上に導
電性接着層を剥離可能に設けてなり、その接着層による
保持下に半導体ウェハを分断後、支持基材を延伸して形
成チップを接着層と共に剥離したのち個々に回収してそ
の接着層を介し被着体に固着するようにしたものである
。In the above method, it is difficult to make the thickness of the adhesive layer uniform with the method of separately applying adhesive to the formed chips, and special equipment and a long time are required to apply the adhesive. A dicing die-bonding film has been proposed that can simplify the process by adding an adhesive layer for chip fixation to the dicing die-bonding film (Japanese Patent Application Laid-Open No. 60-57642). This dicing/die-bonding film has a conductive adhesive layer releasably provided on a supporting base material, and after dividing the semiconductor wafer while being held by the adhesive layer, the supporting base material is stretched to form chips together with the adhesive layer. After peeling off, they are collected individually and adhered to an adherend via the adhesive layer.

しかしながら、支持基材と導電性接着層との接着力を調
整することが困難な問題点があった。すなわち、半導体
ウェハの分断時に分断不能や寸法ミス等の原因となる支
持基材と導電性接着層の眉間剥離が生じない接着力と、
導電性接着層を伴う形成チップの支持基材よりの剥離性
とをバランスさせることが困難な問題点があった。特に
、半導体ウェハを回転丸刃等で切断する方式などのよう
に、大きい保持力が要求される場合に適用できるものを
得ることは困難であった。However, there was a problem in that it was difficult to adjust the adhesive force between the supporting base material and the conductive adhesive layer. In other words, the adhesive strength does not cause peeling between the supporting base material and the conductive adhesive layer, which causes inability to divide or dimensional errors when dividing the semiconductor wafer;
There was a problem in that it was difficult to balance the releasability of the formed chip with the conductive adhesive layer from the supporting base material. In particular, it has been difficult to obtain a method that can be applied to cases where a large holding force is required, such as a method in which semiconductor wafers are cut with a rotating circular blade or the like.

発明が解決しようとする課題 本発明は、半導体ウェハの分断時における保持力と、形
成チップの固着用接着層を伴う剥離性とのバランスに優
れ、２００℃以下の低温でも被着体に強固に接着できる
と共に、高温接着強度に優れるダイシング・ダイボンド
フィルムの開発を課題とする。Problems to be Solved by the Invention The present invention has an excellent balance between the holding power when cutting a semiconductor wafer and the peelability associated with the adhesive layer for fixing the formed chips, and it can firmly adhere to the adherend even at low temperatures of 200°C or less. The objective is to develop a dicing die-bonding film that can be bonded and has excellent high-temperature adhesive strength.

課題を解決するための手段 本発明は、支持基材の上に、粘着層と第１接着層と第２
接着層を順次有してなり、その第１接着層がガラス転移
点１５０°Ｃ以上の熱可塑性樹脂と熱硬化性樹脂を成分
とするポリマーアロイ型接着剤からなると共に粘着層と
の間で剥離可能となっており、第２接着層が１５０℃以
下の温度で粘着性を示す熱硬化性接着剤からなることを
特徴とするダイシング・ダイボンドフィルムを提供する
ものである。Means for Solving the Problems The present invention provides an adhesive layer, a first adhesive layer, and a second adhesive layer on a supporting base material.
The first adhesive layer is made of a polymer alloy type adhesive containing a thermoplastic resin with a glass transition point of 150°C or higher and a thermosetting resin, and is peelable between the adhesive layer and the adhesive layer. The present invention provides a dicing die-bonding film characterized in that the second adhesive layer is made of a thermosetting adhesive that exhibits tackiness at a temperature of 150° C. or lower.

作用 支持基材は、ダイシング・ダイボンドフィルムの強度母
体となるものである。粘着層は、被着体に形成チップを
固着するための第１及び第２の接着層を、接着・剥離バ
ランスよく支持するためのものである。第１接着層は、
形成チップを２００℃以下の低温でも被着体に強固に接
着できるようにし、かつ第２接着層と共に高温接着強度
に優れる（耐熱性）固着を達成するためのものである。The functional support base material serves as a strength matrix for the dicing/die bonding film. The adhesive layer is for supporting the first and second adhesive layers for fixing the formed chip to the adherend with a well-balanced adhesion and peeling. The first adhesive layer is
This is to enable the formed chip to be firmly adhered to an adherend even at a low temperature of 200° C. or lower, and to achieve adhesion with excellent high-temperature adhesive strength (heat resistance) together with the second adhesive layer.

また第１接着層は、常温付近で粘着性を示さず、粘着層
からの剥離性に優れて形成チップのマウント作業の進行
を円滑にする。第２接着層は、その粘着性に基づいて半
導体ウニノ＼を保持するためのものでもある。Further, the first adhesive layer does not exhibit tackiness at around room temperature, has excellent peelability from the adhesive layer, and facilitates the mounting operation of the formed chip. The second adhesive layer is also used to hold the semiconductor unit based on its adhesiveness.

実施例 本発明のダイシング・ダイボンドフィルムを添付図に例
示した。１が支持基材、２が粘着層、３が第１接着層、
４が第２接着層である。EXAMPLE The dicing/die-bonding film of the present invention is illustrated in the attached drawings. 1 is a supporting base material, 2 is an adhesive layer, 3 is a first adhesive layer,
4 is the second adhesive layer.

支持基材としては、例えばプラスチックフィルムなどが
用いられる。そのプラスチックの例としては、ポリプロ
ピレン、ポリエチレン、ポリエステル、ポリカーボネー
ト、エチレン・酢酸ビニル共重合体、エチレン・プロピ
レン共重合体、エチレン・エチルアクリレート共重合体
、ポリ塩化ビニルなどがあげられる。帯電防止能を有す
るプラスチック系の支持基材は、金属や合金、その酸化
物などからなる導電性物質の蒸着層（厚さ３０〜５００
人）を有するフィルムや、このフィルムのラミネート体
などとして得ることができる。支持基材の厚さは５〜２
００ｐｍが一般的であるが、適宜に決定してよい。As the supporting base material, for example, a plastic film or the like is used. Examples of such plastics include polypropylene, polyethylene, polyester, polycarbonate, ethylene/vinyl acetate copolymer, ethylene/propylene copolymer, ethylene/ethyl acrylate copolymer, polyvinyl chloride, and the like. A plastic supporting base material having antistatic ability is a vapor-deposited layer (thickness: 30 to 500 mm) of a conductive material made of metal, alloy, or oxide thereof.
It can be obtained as a film with a person) or a laminate of this film. The thickness of the supporting base material is 5-2
00pm is common, but may be determined as appropriate.

粘着層の形成には適宜な粘着剤を用いてよい。An appropriate adhesive may be used to form the adhesive layer.

厚さは１〜１００μｍが一般的であるが、これに限定さ
れない。The thickness is generally 1 to 100 μm, but is not limited thereto.

第１接着層の形成には、ガラス転移点が１５０℃以上の
熱可塑性樹脂と熱硬化性樹脂を成分とするポリマーアロ
イ型接着剤が用いられる。その熱可塑性樹脂としては、
例えばポリイミド系樹脂、ポリスルホン系樹脂、ポリエ
ーテルスルホン系樹脂などがあげられる。熱硬化性樹脂
としては、例えばエポキシ系樹脂、フェノール系樹脂、
マレイミド系樹脂、シリコーン系樹脂などがあげられる
。A polymer alloy adhesive containing a thermoplastic resin and a thermosetting resin having a glass transition point of 150° C. or higher is used to form the first adhesive layer. As the thermoplastic resin,
Examples include polyimide resins, polysulfone resins, polyethersulfone resins, and the like. Examples of thermosetting resins include epoxy resins, phenolic resins,
Examples include maleimide resin and silicone resin.

第１接着層の厚さは、１〜１００νｍが一般的であるが
これに限定されない。The thickness of the first adhesive layer is generally 1 to 100 νm, but is not limited thereto.

支持基材の上に順次設けられた粘着層と第１接着層はそ
れらの間で剥離可能とされる。本発明においては、半導
体ウェハの分断時における保持力と、形成チップの第１
、第２接着層を伴う剥離容易性などの点より、それらの
間における接着力を１８０度ビール値（常温、引張速度
３００ｍ／分）に基づき、半導体ウェハの分断時におい
て２００ｇ／２０−以上、形成チップの剥離時において
１５０ｇ／２０−以下となるよう粘着層、ないし第１接
着層を調製したものが好ましい。The adhesive layer and the first adhesive layer, which are sequentially provided on the support base material, can be peeled off between them. In the present invention, the holding force when dividing the semiconductor wafer and the first
, from the point of view of ease of peeling with the second adhesive layer, etc., the adhesive force between them is 200 g/20- or more when dividing the semiconductor wafer, based on the 180 degree beer value (room temperature, tensile speed 300 m/min). It is preferable that the adhesive layer or the first adhesive layer is prepared so that the weight is 150 g/20 or less when the formed chip is peeled off.

粘着層と第１接着層との間を剥離可能とする方式につい
ては特に限定はない。形成チップを剥離する際に接着力
を低下、ないし喪失させつる方式であればよい。その例
としては、粘着層の硬化方式、発泡方式ないし加熱膨脹
方式、ブルーミング方式、粘着層ないし第１接着層の冷
却方式、粘着層と第１接着層との間に加熱処理で作用す
る接着力低減層を介在させる方式などがあげられる。本
発明では前記の方式を適宜に組合せて適用してもよい。There is no particular limitation on the method for making the adhesive layer and the first adhesive layer separable. Any method may be used as long as the adhesive force is reduced or lost when the formed chip is peeled off. Examples include adhesive layer curing methods, foaming methods or heat expansion methods, blooming methods, adhesive layer or first adhesive layer cooling methods, and adhesive force that acts between the adhesive layer and the first adhesive layer during heat treatment. Examples include a method in which a reduction layer is interposed. In the present invention, the above methods may be appropriately combined and applied.

前記した粘着層の硬化方式は、架橋度を増大させて接着
力を低下させたり、硬化収縮により応力を発生させるも
のである。その形成は、紫外線硬化型や加熱硬化型など
の硬化型粘着剤を用いることにより行うことができる。The method of curing the adhesive layer described above is to increase the degree of crosslinking to reduce adhesive strength, or to generate stress due to curing shrinkage. The formation can be performed by using a curable adhesive such as an ultraviolet curable adhesive or a heat curable adhesive.

紫外線硬化型の粘着剤の代表例としては、不飽和結合を
２個以上有する付加重合性化合物やエポキシ基を有する
アルコキシシランの如き光重合性化合物と、カルボニル
化合物や有機硫黄化合物、過酸化物、アミン、オニウム
塩系化合物の如き光重合開始剤を配合したゴム系粘着剤
や、アクリル系粘着剤などがあげられろく特開昭６０−
１９６９５６号公報）。光重合性化合物、光重合開始剤
の配合量は、それぞれベースボリマー１００重量部あた
り１０〜５００重量部、０．０５〜２０重量部か一般的
である。Typical examples of UV-curable adhesives include photopolymerizable compounds such as addition-polymerizable compounds having two or more unsaturated bonds and alkoxysilanes having epoxy groups, carbonyl compounds, organic sulfur compounds, peroxides, Examples include rubber adhesives containing photopolymerization initiators such as amines and onium salt compounds, and acrylic adhesives.
196956). The amounts of the photopolymerizable compound and the photopolymerization initiator are generally 10 to 500 parts by weight and 0.05 to 20 parts by weight, respectively, per 100 parts by weight of the base polymer.

なおアクリル系ポリマーには、通例のもの（特公昭５７
−５４０６８号公報、特公昭５８−３３９０９号公報等
）のほか、側鎖にラジカル反応性不飽和基を有するもの
（特公昭６１−５６２６４号公報）や、分子中にエポキ
シ基を有するものなども用いうる。また、不飽和結合を
２個以上有する付加重合性化合物としては、例えばアク
リル酸やメタクリル酸の多価アルコール系エステルやオ
リゴエステル、エポキシ系やウレタン系化合物などかあ
げられる。さらにエチレングリコールシグリシシルエー
テルの如き分子中にエポキシ基を１個又は２個以上有す
るエポキシ基官能性架橋剤を追加配合して架橋効率を上
げることもできる。紫外線硬化型の粘着層を形成する場
合には紫外線照射処理を可能とすへく支持基材には透明
なものが用いられる。In addition, the acrylic polymers are commonly used (Special Publications Publication No. 57
-54068, Japanese Patent Publication No. 58-33909, etc.), as well as those with radically reactive unsaturated groups in the side chain (Japanese Patent Publication No. 61-56264), and those with epoxy groups in the molecule. Can be used. Examples of addition polymerizable compounds having two or more unsaturated bonds include polyhydric alcohol esters and oligoesters of acrylic acid and methacrylic acid, epoxy compounds, and urethane compounds. Furthermore, crosslinking efficiency can be increased by adding an epoxy group-functional crosslinking agent having one or more epoxy groups in the molecule, such as ethylene glycol siglycyl ether. When forming an ultraviolet curable adhesive layer, a transparent support substrate is used to enable ultraviolet irradiation treatment.

加熱架橋型の粘着剤の代表例としては、ポ１１イソシア
ネート、メラミン樹脂、アミン−エポキン樹脂、過酸化
物、金属キレート化合物の如き架橋剤や、必要に応じシ
ヒニルヘンゼン、エチレングリコールジアクリレート、
トリメチロールプロパントリメタクリレートの如き多官
能性化合物からなる架橋調節剤などを配合したゴム系粘
着剤やアクリル系粘着剤などがあげられる。Typical examples of heat-crosslinking type adhesives include crosslinking agents such as poly-11 isocyanate, melamine resin, amine-epoquine resin, peroxide, metal chelate compounds, and if necessary, crosslinking agents such as cychinylhenzene, ethylene glycol diacrylate,
Examples include rubber adhesives and acrylic adhesives containing a crosslinking regulator made of a polyfunctional compound such as trimethylolpropane trimethacrylate.

粘着層の発泡方式、ないし加熱彫版方式は、加熱処理で
粘着層を発泡構造とすることにより、あるいは当該層の
彫版下に表面を凹凸構造とすることにより、接着面積を
減少させて接着力を低下させるものである。その形成は
、粘着層に発泡剤、ないし加熱彫版剤を含有させること
により行うことができる。前記した硬化方式との併用は
、接着力の低下に特に有効である。The adhesive layer foaming method or heat engraving method reduces the adhesion area by making the adhesive layer into a foamed structure through heat treatment, or by creating an uneven structure on the surface under the engraving of the layer. It reduces power. The formation can be carried out by incorporating a foaming agent or a heat engraving agent into the adhesive layer. Combination use with the above-mentioned curing method is particularly effective in reducing adhesive strength.

発泡剤としては、例えば炭酸アンモニウムやアンド類の
如き無機系発泡剤、アゾ系化合物やヒドラジン系化合物
、セミカルバジド系化合物、トリアゾール系化合物、Ｎ
−ニトロソ系化合物の如き有機系発泡剤なと、公知物を
用いてよい。加熱彫版剤としても、例えばカスや低沸点
液等を封入したマイクロカプセルなと、公知物を用いて
よい。Examples of the blowing agent include inorganic blowing agents such as ammonium carbonate and AND compounds, azo compounds, hydrazine compounds, semicarbazide compounds, triazole compounds, N
- Known organic blowing agents such as nitroso compounds may be used. As the heating engraving agent, known materials such as microcapsules containing dregs, low boiling point liquid, etc. may be used.

前記のマイクロカプセルは、発泡剤としても用いること
ができて、前記した彫版による表面凹凸構造とするか発
泡による発泡構造とするかを制御することができる。ま
た、粘着剤中に容易に分散させることができて好ましい
。発泡剤、ないし加熱彫版剤の使用量は、ベースボリマ
ー１００重量部あたり０．３〜３００重量部が一般的で
ある。The microcapsules described above can also be used as a foaming agent, and it is possible to control whether the surface unevenness structure is formed by engraving or the foamed structure is formed by foaming. It is also preferable because it can be easily dispersed in the adhesive. The amount of blowing agent or heat engraving agent used is generally 0.3 to 300 parts by weight per 100 parts by weight of the base polymer.

粘着層のブルーミング方式は、加熱処理で第１接着層と
の界面にブルーミング剤を活発に析出させて接着力を低
下させるものである。その形成は粘着層にブルーミング
剤を含有させることにより行うことができる。用いるブ
ルーミング剤は、第１接着層との界面における接着力を
低下させるものであればよい。一般には、界面活性剤や
シリコーン組成物、パラフィンやワックス等の低融点物
質などが用いられる。有機溶剤や水等の液体もマイクロ
カプセル化して用いうる。界面活性剤の使用は、帯電防
止能を付与しつる利点などもある。In the blooming method of the adhesive layer, a blooming agent is actively precipitated at the interface with the first adhesive layer by heat treatment, thereby reducing the adhesive force. The formation can be carried out by incorporating a blooming agent into the adhesive layer. The blooming agent used may be any blooming agent as long as it reduces the adhesive force at the interface with the first adhesive layer. Generally, surfactants, silicone compositions, and low melting point substances such as paraffin and wax are used. Liquids such as organic solvents and water can also be microencapsulated and used. The use of surfactants also has the advantage of imparting antistatic properties.

ブルーミング剤の使用量は、ベースボリマー１００重量
部あたり１０〜３００重量部が一般的である。The amount of blooming agent used is generally 10 to 300 parts by weight per 100 parts by weight of the base polymer.

粘着層、ないし第１接着層の冷却方式は、低温化により
接着力を低下させるものである。冷却温度は一３０℃程
度までが一般的である。冷却方式は他の方式の適用後に
適用することもてきる。The method of cooling the adhesive layer or the first adhesive layer is to lower the adhesive strength by lowering the temperature. The cooling temperature is generally about -30°C. Cooling methods can also be applied after other methods have been applied.

加熱処理で作用する接着力低減層を介在させる方式は、
第１接着層と粘着層との間に接着力低減層を固形層とし
て設け、加熱処理により接着力低減層を変化させて当該
界面の接着力を低減させるものである。接着力低減層の
形成には、前記のマイクロカプセル化した発泡剤、ない
し加熱彫版剤やブルーミング剤、加熱処理で軟化、ない
し流動体化するパラフィンやワックス等の低融点物質な
どが用いつる。接着力低減層は、粘着層等の面上に部分
塗布やパターン塗布した状態のものとして形成してもよ
く、第１接着層と粘着層との界面の全面を占有する必要
はない。The method of interposing an adhesion reduction layer that acts through heat treatment is
An adhesive force reducing layer is provided as a solid layer between the first adhesive layer and the adhesive layer, and the adhesive force reducing layer is changed by heat treatment to reduce the adhesive force at the interface. To form the adhesive strength reducing layer, the above-mentioned microencapsulated foaming agent, heat engraving agent, blooming agent, and low melting point substances such as paraffin and wax that soften or become fluidized by heat treatment are used. The adhesive strength reducing layer may be formed by partial coating or pattern coating on the surface of the adhesive layer, etc., and does not need to occupy the entire surface of the interface between the first adhesive layer and the adhesive layer.

第１接着層上の第２接着層の形成には、１５０℃以下の
温度で粘着性を示す熱硬化性接着剤が用いられる。かか
る第２接着層の形成は例えば、エポキシ系樹脂、フェノ
ール系樹脂、ポリイミド系樹脂、マレイミド系樹脂、シ
リコーン系樹脂の如き熱硬化性樹脂をＢステージ状態と
する方式、熱硬化性樹脂にカルボキシル基やヒドロキシ
ル基の如き架橋用官能基を導入した粘着性物質と、必要
に応じて架橋剤を配合した粘着性接着剤を用いる方式な
どにより行うことができる。前記の粘着性物質としては
例えば、ＮＢＲやアクリル系ポリマーの如き粘着剤形成
用ポリマー、ロジン系樹脂やテルペン系樹脂の如き粘着
性付与樹脂などがあげられる。なお、粘着性接着剤を用
いる方式においても必要に応じてＢステージ状態に半硬
化される。A thermosetting adhesive exhibiting tackiness at a temperature of 150° C. or lower is used to form the second adhesive layer on the first adhesive layer. The second adhesive layer can be formed by, for example, bringing a thermosetting resin such as an epoxy resin, a phenol resin, a polyimide resin, a maleimide resin, or a silicone resin into a B-stage state, or by adding a carboxyl group to the thermosetting resin. This can be carried out by a method using a sticky material into which a crosslinking functional group such as a hydroxyl group is introduced, and a sticky adhesive mixed with a crosslinking agent if necessary. Examples of the above-mentioned adhesive substances include adhesive-forming polymers such as NBR and acrylic polymers, and tackifying resins such as rosin resins and terpene resins. Note that even in a method using a tacky adhesive, it is semi-cured to a B-stage state if necessary.

第２接着層の厚さは、１〜１１００ｕが一般的であるが
これに限定されない。The thickness of the second adhesive layer is generally 1 to 1100 μm, but is not limited thereto.

本発明においては、第１接着層又は／′及び第２接着層
に、例えばアルミニウム、銅、銀、金、パラジウム、カ
ーボンの如き導電性物質からなる微粉末を含有させて導
電性を付与してもよい。またアルミナの如き熱伝導性物
質からなる微粉末を含有させて熱伝導性を高めてもよい
。In the present invention, the first adhesive layer or /' and the second adhesive layer contain fine powder of a conductive substance such as aluminum, copper, silver, gold, palladium, or carbon to impart conductivity. Good too. Further, fine powder made of a thermally conductive substance such as alumina may be included to improve thermal conductivity.

本発明のダイシング・ダイボンドフィルムの使用は、例
えば次の方法により行うことができる。The dicing die-bonding film of the present invention can be used, for example, by the following method.

すなわち、第２接着層に半導体ウェハを接着保持させて
固定し、回転丸刃等による適宜な手段で第１、第２接着
層も含めてチップに分断する。その際、支持基材は分断
せずに一体物として残存させる方式が後工程での取扱い
性等の点より有利である。次に、必要に応じて粘着層と
第１接着層との間の接着力を低下、ないし喪失させる措
置を加えた後、形成チップを第１、第２接着層と共に粘
着層より剥離し、それをリードフレームや基板等の被着
体に第１接着層を介して接着し、接着層を加熱硬化させ
て形成チップを固定する方法である。That is, the semiconductor wafer is adhesively held and fixed on the second adhesive layer, and is divided into chips including the first and second adhesive layers using an appropriate means such as a rotary circular blade. In this case, it is advantageous to leave the support base material as an integral body without dividing it, in terms of ease of handling in subsequent steps. Next, after taking measures to reduce or lose the adhesive force between the adhesive layer and the first adhesive layer as necessary, the formed chip is peeled off from the adhesive layer together with the first and second adhesive layers, and then This is a method of bonding the formed chip to an adherend such as a lead frame or a substrate via a first adhesive layer, and then heating and curing the adhesive layer to fix the formed chip.

なおダイシング・ダイボンドフィルムはそれを実用に供
するまでの間、その第２接着層にセパレータを仮着して
保護することが通例である。Note that the dicing die-bonding film is usually protected by temporarily attaching a separator to its second adhesive layer until it is put into practical use.

実施例１ 厚さ５０１のポリ塩化ビニルフィルムからなる支持基材
の上に、アクリル系の紫外線硬化型粘着剤を塗布して厚
さ３０μ■の粘着層を形成した。Example 1 An acrylic ultraviolet curing adhesive was applied onto a supporting base material made of a polyvinyl chloride film having a thickness of 501 μm to form an adhesive layer having a thickness of 30 μm.

一方、剥離剤で処理したポリエステルフィルムからなる
セパレータの上に、カルボキシル変性ＮＢ　Ｒ／ビスフ
ェノールＡ型エポキシ樹脂（エポキシ当量４５０）／ノ
ボラック型フェノール樹脂（軟化点７５℃）／２−メチ
ルイミダゾールを、ｌｏｏ／′６０／３０／１の重量比
で配合したメチルエチルケトン溶液を塗布し、１００℃
で１０分間加熱して厚さ１０ｕｍの第２接着層を形成し
た。On the other hand, carboxyl-modified NBR/bisphenol A epoxy resin (epoxy equivalent: 450)/novolak phenol resin (softening point 75°C)/2-methylimidazole was placed on a separator made of a polyester film treated with a release agent. A methyl ethyl ketone solution mixed in a weight ratio of /'60/30/1 was applied and heated at 100°C.
was heated for 10 minutes to form a second adhesive layer with a thickness of 10 um.

他方、ポリエステルフィルムの上にポリエーテルイミド
／ビスフェノールＡ型エポキシ樹脂（エポキシ当量１８
５）／ノボラック型フェノール樹脂（軟化点７５℃）／
２−メチルイミダゾールをｌｏ。On the other hand, a polyetherimide/bisphenol A type epoxy resin (epoxy equivalent: 18
5) / Novolac type phenolic resin (softening point 75°C) /
2-methylimidazole lo.

１５０／３０１０．５の重量比で配合したジメチルアセ
トアミド溶液を塗布し、１３０’ｃテ１ｉ間、０．５ａ
＋ｍＨｇの減圧下に加熱して厚さ２０ｕｍの第１接着層
を形成した。A dimethylacetamide solution mixed in a weight ratio of 150/3010.5 was applied, and 0.5a
A first adhesive layer having a thickness of 20 um was formed by heating under a reduced pressure of +mHg.

次に、前記支持基材側の粘着層の上に、第１接着層を圧
着した後そのポリエステルフィルムを剥離し、その上に
第２接着層を圧着して、ダイシング・ダイボンドフィル
ムを得た。Next, a first adhesive layer was pressure-bonded onto the adhesive layer on the supporting base material side, and then the polyester film was peeled off, and a second adhesive layer was pressure-bonded thereon to obtain a dicing die-bonding film.

実施例２ ポリエーテルイミドに代えてポリエーテルスｌレホンを
用いて第１接着層を形成したほかは実施例１に準じてダ
イシング・ダイボンドフィルムを得た。Example 2 A dicing die-bonding film was obtained in the same manner as in Example 1, except that the first adhesive layer was formed using polyether 1-rephon instead of polyetherimide.

実施例３ ポリエーテルイミドに代えてポリスルホンを用いて第１
接着層を形成したほかは実施例１に準じてダイシング・
ダイボンドフィルムを得た。Example 3 The first test using polysulfone instead of polyetherimide
Dicing and dicing were carried out in the same manner as in Example 1 except that the adhesive layer was formed.
A die bond film was obtained.

実施例４ 厚さ１００μｓのポリエステルフィルムからなる支持基
材の上に厚さ５０μｍの加熱発泡性粘着層を設けてなる
ものを用いたほかは、実施例１に準じてダイシング・ダ
イボンドフィルムを得た。Example 4 A dicing/die-bonding film was obtained according to Example 1, except that a 50 μm thick heat-foamable adhesive layer was provided on a support base made of a 100 μs thick polyester film. .

なお前記の加熱発泡性粘着層は、アクリル系粘着剤１０
０部中に、塩化ヒニリデンーアクリロニトリル共重合体
からなる外壁材でイソブタンをカプセル化してなる熱彫
版性微小球（平均粒径２０μｍ）を２０部添加し、その
トルエン溶液を支持基村上に塗工、乾燥させて形成した
。Note that the heat-foamable adhesive layer described above is made of acrylic adhesive 10
To 0 parts, 20 parts of heat-engravable microspheres (average particle size 20 μm) made by encapsulating isobutane with an outer wall material made of hnylidene chloride-acrylonitrile copolymer were added, and the toluene solution was added to the supporting base Murakami. It was formed by coating and drying.

実施例５ 第１接着層を、ポリエーテルイミド７、・′ビスフェノ
ールＡ型エポキシ樹脂（エポキシ当量１８５）、。Example 5 The first adhesive layer was made of polyetherimide 7, Bisphenol A type epoxy resin (epoxy equivalent: 185).

２−メチルイミダゾール：　１００／’６０．、／　１
の重量比からなる配合物で形成したほかは実施例１に準
してダイシング・ダイボンドフィルムを得た。2-Methylimidazole: 100/'60. , / 1
A dicing/die-bonding film was obtained in accordance with Example 1, except that it was formed using a formulation having a weight ratio of .

評価試験 上記実施例で得たダイシング・ダイボンドフィルムより
セパレータを剥離し、露出した第２接着層に４インチ径
、３７０μｍ厚のミラーウェハを６０℃でロール圧着し
たのち、３ｗｌｌ１１角にフルダイシングし、ついで支
持基材側を介し紫外線を照射して粘着層を硬化させ、ニ
ードルによる突上げ方式で形成チップをピックアップし
たのち、それを４２アロイフレームに２００℃で接着し
、さらに２００℃で３０分間硬化させて固着処理した。Evaluation Test The separator was peeled off from the dicing/die-bonding film obtained in the above example, and a mirror wafer with a diameter of 4 inches and a thickness of 370 μm was roll-bonded to the exposed second adhesive layer at 60° C., and then it was fully diced into 3 wafers and 11 squares. Next, the adhesive layer was cured by irradiating ultraviolet rays through the supporting base material side, and the formed chip was picked up using a needle push-up method, and then bonded to a 42 alloy frame at 200°C, and further cured at 200°C for 30 minutes. It was then fixed.

前記において、実施例１，２及び３のいずれの場合にも
、ダイシング時にチップ飛び等の不良は生しなかった。In the above, in any of Examples 1, 2, and 3, defects such as chip flying did not occur during dicing.

また、ピックアップ時にもトラブルなく容易に粘着層と
第１接着層との間で剥離することができた。さらに、固
着処理されたチ・ツブの剪断接着力はいずれの場合にも
、常温で１５ｋｇ以上、２００℃で１．５ｋｇ以上であ
り、工程上充分な接着力を示した。Furthermore, the adhesive layer and the first adhesive layer could be easily peeled off without any trouble during pickup. Furthermore, the shear adhesive strength of the fixed tip was 15 kg or more at room temperature and 1.5 kg or more at 200° C. in all cases, indicating sufficient adhesive strength for the process.

発明の効果 本発明によれば、粘着層と第１、第２接着層を有する構
造とし、その第１接着層と粘着層との間で剥離するよう
にしたので、チップへの分断時に半導体ウェハを充分な
保持力で固定することができると共に、形成したチップ
を第１、第２接着層と共に良好な剥離性のもとにスムー
スに剥離することができる。Effects of the Invention According to the present invention, the structure has an adhesive layer and first and second adhesive layers, and since the first adhesive layer and the adhesive layer are separated, the semiconductor wafer is separated into chips. can be fixed with sufficient holding force, and the formed chip can be smoothly peeled off together with the first and second adhesive layers with good peelability.

また、第１、第２接着層を介して形成チ・ツブを被着体
に低い加熱温度で、かつ高温接着強度に優れる状態に接
着することができる。Furthermore, the forming chip/tube can be bonded to the adherend at a low heating temperature and in a state with excellent high-temperature adhesive strength through the first and second adhesive layers.

【図面の簡単な説明】[Brief explanation of the drawing]

図はダイシング・ダイボンドフィルムを例示した断面図
である。 １：支持基材 ２：粘着層 ３：第１接着層 ４・第２接着層 特許出願人　　日束電工株式会社The figure is a cross-sectional view illustrating a dicing die-bonding film. 1: Support base material 2: Adhesive layer 3: First adhesive layer 4, second adhesive layer Patent applicant: Nichizuka Denko Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] １、支持基材の上に、粘着層と第１接着層と第２接着層
を順次有してなり、その第１接着層がガラス転移点１５
０℃以上の熱可塑性樹脂と熱硬化性樹脂を成分とするポ
リマーアロイ型接着剤からなると共に粘着層との間で剥
離可能となっており、第２接着層が１５０℃以下の温度
で粘着性を示す熱硬化性接着剤からなることを特徴とす
るダイシング・ダイボンドフィルム。1. A support base material has an adhesive layer, a first adhesive layer, and a second adhesive layer in this order, and the first adhesive layer has a glass transition point of 15.
It is made of a polymer alloy type adhesive containing a thermoplastic resin and a thermosetting resin at a temperature of 0°C or higher, and can be peeled off from the adhesive layer, with the second adhesive layer becoming adhesive at a temperature of 150°C or lower. A dicing die bond film comprising a thermosetting adhesive exhibiting the following properties.
JP2328186A 1990-11-27 1990-11-27 Dicing die-bond film Pending JPH04196246A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2328186A JPH04196246A (en) 1990-11-27 1990-11-27 Dicing die-bond film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2328186A JPH04196246A (en) 1990-11-27 1990-11-27 Dicing die-bond film

Publications (1)

Publication Number Publication Date
JPH04196246A true JPH04196246A (en) 1992-07-16

Family

ID=18207431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2328186A Pending JPH04196246A (en) 1990-11-27 1990-11-27 Dicing die-bond film

Country Status (1)

Country Link
JP (1) JPH04196246A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006299226A (en) * 2005-03-23 2006-11-02 Furukawa Electric Co Ltd:The Dicing die bond sheet
KR100787721B1 (en) * 2006-07-25 2007-12-24 제일모직주식회사 Dicing die bond film suitable for processing of thin wafer
WO2008015759A1 (en) 2006-08-04 2008-02-07 Hitachi Chemical Co., Ltd. Film adhesive, adhesive sheet, and semiconductor device using the same
JP2008060580A (en) * 2006-08-31 2008-03-13 Natl Starch & Chem Investment Holding Corp Dicing die bonding film
JP2009206134A (en) * 2008-02-26 2009-09-10 Panasonic Corp Pickup method for chip
WO2010016305A1 (en) 2008-08-04 2010-02-11 日立化成工業株式会社 Adhesive composition, film-like adhesive, adhesive sheet and semiconductor device
JP2011515839A (en) * 2008-03-14 2011-05-19 チェイル インダストリーズ インコーポレイテッド Composite function tape for semiconductor package and method of manufacturing semiconductor device using the same
KR20210041569A (en) 2018-08-03 2021-04-15 쇼와덴코머티리얼즈가부시끼가이샤 Adhesive composition, film adhesive, adhesive sheet, and method of manufacturing a semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006299226A (en) * 2005-03-23 2006-11-02 Furukawa Electric Co Ltd:The Dicing die bond sheet
KR100787721B1 (en) * 2006-07-25 2007-12-24 제일모직주식회사 Dicing die bond film suitable for processing of thin wafer
WO2008015759A1 (en) 2006-08-04 2008-02-07 Hitachi Chemical Co., Ltd. Film adhesive, adhesive sheet, and semiconductor device using the same
US8293847B2 (en) 2006-08-04 2012-10-23 Hitachi Chemical Co., Ltd. Film-like adhesive, adhesive sheet, and semiconductor device using same
JP2008060580A (en) * 2006-08-31 2008-03-13 Natl Starch & Chem Investment Holding Corp Dicing die bonding film
JP2009206134A (en) * 2008-02-26 2009-09-10 Panasonic Corp Pickup method for chip
JP2011515839A (en) * 2008-03-14 2011-05-19 チェイル インダストリーズ インコーポレイテッド Composite function tape for semiconductor package and method of manufacturing semiconductor device using the same
WO2010016305A1 (en) 2008-08-04 2010-02-11 日立化成工業株式会社 Adhesive composition, film-like adhesive, adhesive sheet and semiconductor device
US8373283B2 (en) 2008-08-04 2013-02-12 Hitachi Chemical Company, Ltd. Adhesive composition, film-like adhesive, adhesive sheet and semiconductor device
KR20210041569A (en) 2018-08-03 2021-04-15 쇼와덴코머티리얼즈가부시끼가이샤 Adhesive composition, film adhesive, adhesive sheet, and method of manufacturing a semiconductor device

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