JPH041728A - Liquid crystal display device - Google Patents
Liquid crystal display deviceInfo
- Publication number
- JPH041728A JPH041728A JP2103483A JP10348390A JPH041728A JP H041728 A JPH041728 A JP H041728A JP 2103483 A JP2103483 A JP 2103483A JP 10348390 A JP10348390 A JP 10348390A JP H041728 A JPH041728 A JP H041728A
- Authority
- JP
- Japan
- Prior art keywords
- light
- film
- liquid crystal
- substrate
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 40
- 239000010408 film Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000010409 thin film Substances 0.000 claims abstract description 28
- 230000031700 light absorption Effects 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- 239000011159 matrix material Substances 0.000 claims 4
- 239000000956 alloy Substances 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 8
- 230000007423 decrease Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 235000021184 main course Nutrition 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- -1 praseodymium-manganese-oxygen Chemical compound 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
Landscapes
- Physics & Mathematics (AREA)
- Liquid Crystal (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、液晶表示装置に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to a liquid crystal display device.
従来の技術
近年、液晶表示装置はＣＲＴに代わるディスブレイとし
て注目され、より高画質化に向けて改良が進められてい
る。2. Description of the Related Art In recent years, liquid crystal display devices have attracted attention as a display that can replace CRTs, and improvements are being made to achieve even higher image quality.
以下図面を参照しながら、上述した従来の液晶表示装置
の一例について説明する。第４図は、従来の液晶表示装
置の断面図を示すものである。第４図において、■は第
１の基板、２は透明基板、３は透明電極、６は第２の基
板、７は絵素スインチ素子、８は走査線、９は絵素電極
、１０は液晶層、１１は遮光膜である。特に遮光膜１１
は絵素スイッチ素子７．８の走査線の上に被いかふす様
に配置される。（たとえば、映像情報（１）、１９８９
年９月号２３〜３１ページ）、この遮光膜は従来、例え
ばクロム等の金属が多用されている。この遮光膜の主な
役割は大きく分けて３つある。１つは第１の基板１を透
過して第２の基板６に到達する光が絵素スイッチ素子７
には当たらないように遮光する役目がある。絵素スイッ
チ素子には、例えばアモルファスシリコン薄膜トランジ
スタが多用されておりこの素子は光の影響を受は易い。An example of the above-mentioned conventional liquid crystal display device will be described below with reference to the drawings. FIG. 4 shows a cross-sectional view of a conventional liquid crystal display device. In FIG. 4, ■ is the first substrate, 2 is the transparent substrate, 3 is the transparent electrode, 6 is the second substrate, 7 is the pixel switch element, 8 is the scanning line, 9 is the pixel electrode, and 10 is the liquid crystal. Layer 11 is a light shielding film. Especially the light shielding film 11
are arranged over the scanning line of the picture element switch element 7.8 in a covering manner. (For example, Video Information (1), 1989
(September issue, pages 23-31) Conventionally, metals such as chromium have been frequently used for this light-shielding film. This light-shielding film has three main roles. One is that the light that passes through the first substrate 1 and reaches the second substrate 6 is transmitted through the pixel switch element 7.
It has the role of blocking light so that it does not hit. For example, amorphous silicon thin film transistors are often used as picture element switch elements, and these elements are easily affected by light.
そのため必ず遮光する必要があり遮光膜は必要である。Therefore, it is necessary to shield from light, and a light-shielding film is necessary.
２つ目の役割は、走査線８と第１の基板１との間に生じ
る電界によって液晶層ｌＯが変化するがこの影響を隠す
役割である。３つ目の役割は、隣合う絵素の境界をはっ
きりとさせる役割である。The second role is to hide the effect of changes in the liquid crystal layer IO due to the electric field generated between the scanning line 8 and the first substrate 1. The third role is to make the boundaries between adjacent picture elements clear.
発明が解決しようとする課題
しかしながら上記のような構成では、遮光膜に達した光
の多くが反射されて、その反射光が画像として現われた
り、また別の反射光が絵素スイッチ素子に当たったりし
て十分な黒レベルを創出できなくなるという問題点を有
していた。Problems to be Solved by the Invention However, with the above configuration, much of the light that reaches the light-shielding film is reflected, and the reflected light appears as an image, and other reflected light hits the pixel switch element. However, there was a problem in that it was not possible to create a sufficient black level.
本発明は、上記問題点に鑑み、遮光膜からの反射光をな
くし、十分な黒レベルを創出できる液晶表示装置を提供
するものである。In view of the above problems, the present invention provides a liquid crystal display device that eliminates reflected light from a light shielding film and can create a sufficient black level.
課題を解決するための手段
上記問題点を解決するために本発明の液晶表示装置は、
金属薄膜と光吸収膜との２層、または金属薄膜の両側を
光吸収膜でサンドインチした３層で構成された遮光膜を
備えたものである。Means for Solving the Problems In order to solve the above problems, the liquid crystal display device of the present invention has the following features:
It is equipped with a light-shielding film composed of two layers, a metal thin film and a light-absorbing film, or a three-layer structure in which both sides of a metal thin film are sandwiched with light-absorbing films.
作用
本発明は上記した構成によって、遮光膜に当たった光は
光吸収膜によって吸収され反射光を軽減できる。そのた
め反射光によって画像や絵素スイッチ素子が影響を受け
ることが無い。また光吸収膜だけで遮光膜を構成すると
十分に光吸収膜を透過する光を軽減する事ができない。Effect of the Invention With the above-described configuration, the light that hits the light-shielding film is absorbed by the light-absorbing film, and reflected light can be reduced. Therefore, the image and the picture element switch elements are not affected by the reflected light. Furthermore, if the light-shielding film is composed only of the light-absorbing film, it is not possible to sufficiently reduce the light that passes through the light-absorbing film.
そこで金属薄膜と光吸収膜を併用することで反射光も少
なく透過光もない遮光膜を作ることができる。また金属
薄膜は薄い膜厚で十分な遮光効果が得られるため凹凸の
少ない基板が作れ液晶層の配向性に及ぼす影響も小さく
できる。Therefore, by using a metal thin film and a light-absorbing film in combination, it is possible to create a light-shielding film that reflects less light and has no transmitted light. Furthermore, since a metal thin film can provide a sufficient light-shielding effect with a small film thickness, a substrate with less unevenness can be created and the influence on the alignment of the liquid crystal layer can be reduced.
実施例
以下本発明の一実施例の液晶表示装置について、図面を
参照しながら説明する。EXAMPLE Hereinafter, a liquid crystal display device according to an example of the present invention will be described with reference to the drawings.
第１図（ａ）、第１図（ｂ）は本発明に第１の実施例に
おける液晶表示装置の断面図を示すものである。FIGS. 1(a) and 1(b) show cross-sectional views of a liquid crystal display device according to a first embodiment of the present invention.
第１図において、１は第１の基板、２は透明基板、３は
透明電極、４は光吸収膜、５は金属薄膜、６は第２の基
板、７は絵素スイッチ素子、８は走査線、９は絵素電極
、１０は液晶層である。第１図（ａ）と第１図（ｂ）で
は３の透明電極と４の光吸収膜、５の金属薄膜との位置
関係が違うが同じ効果が得られる。本実施例では、２の
透明基板を透過して４の光吸収膜に当たった光を吸収す
る。第４関で示したような構造を持つ従来例では、クロ
ム製の遮光膜に当たった光のうち６０〜７０％の光が反
射されて画像の黒レベルに影響を及ぼしていたが、第１
図に示した構成にし、たとえば４の光吸収膜にプラセオ
ジム・マンガン・酸素薄膜、５の金属薄膜にクロムを用
いた場合、反射光を２０％以下にすることができる。本
実施例は、１の透明基板を透過して４の光吸収膜に強い
光が当たる場合に有効である。In FIG. 1, 1 is a first substrate, 2 is a transparent substrate, 3 is a transparent electrode, 4 is a light absorption film, 5 is a metal thin film, 6 is a second substrate, 7 is a pixel switch element, and 8 is a scanning 9 is a picture element electrode, and 10 is a liquid crystal layer. Although the positional relationship between the transparent electrode 3, the light absorption film 4, and the metal thin film 5 is different between FIG. 1(a) and FIG. 1(b), the same effect can be obtained. In this embodiment, the light that passes through the transparent substrate 2 and hits the light absorption film 4 is absorbed. In the conventional example with the structure shown in Section 4, 60 to 70% of the light hitting the chrome light-shielding film was reflected, affecting the black level of the image.
If the configuration shown in the figure is used, and for example a praseodymium-manganese-oxygen thin film is used as the light absorption film 4, and chromium is used as the metal thin film 5, the reflected light can be reduced to 20% or less. This embodiment is effective when strong light passes through the transparent substrate 1 and hits the light absorption film 4.
以下本発明の第２の実施例について図面を参照しながら
説明する。A second embodiment of the present invention will be described below with reference to the drawings.
第２図（ａ）、第２図ら）は本発明に第２の実施例にお
ける液晶表示装置の断面図を示すものである。FIG. 2(a), FIG. 2, etc.) show cross-sectional views of a liquid crystal display device according to a second embodiment of the present invention.
第２図において、１は第１の基板、２は透明基板、３は
透明電極、６は第２の基板、７は絵素スイッチ素子、８
は走査線、９は絵素電極、１ｏは液晶層であり以上は第
１図の構成と同様なものである。In FIG. 2, 1 is a first substrate, 2 is a transparent substrate, 3 is a transparent electrode, 6 is a second substrate, 7 is a pixel switch element, and 8
1 is a scanning line, 9 is a picture element electrode, and 1o is a liquid crystal layer, which is the same as the structure shown in FIG.
第１図の構成と異なるのは４の光吸収膜と５の金属薄膜
の位置関係が逆である点である。本実施例では、１０の
液晶層を透過して４の光吸収膜に当たった光を吸収する
。第２図（ａ）と第２図（ｂ）では３の透明電極と４の
光吸収膜、５の金属薄膜との位置関係が違うが同し効果
が得られる。本実施例は、１０の液晶層を透過して４の
光吸収膜に強い光が当たる場合に有効である。The difference from the configuration shown in FIG. 1 is that the positional relationship between the light absorbing film 4 and the metal thin film 5 is reversed. In this embodiment, light that passes through 10 liquid crystal layers and hits 4 light absorption films is absorbed. Although the positional relationship between the transparent electrode 3, the light absorption film 4, and the metal thin film 5 is different between FIG. 2(a) and FIG. 2(b), the same effect can be obtained. This embodiment is effective when strong light passes through 10 liquid crystal layers and hits 4 light absorption films.
以下本発明の第３の実施例について図面を参照しながら
説明する。A third embodiment of the present invention will be described below with reference to the drawings.
第３図（ａ）、第３図（ｂ）は本発明に第３の実施例に
おける液晶表示装置の断面図を示すものである。FIGS. 3(a) and 3(b) show cross-sectional views of a liquid crystal display device according to a third embodiment of the present invention.
第３図において、１は第１の基板、２は透明基板、３は
透明電極、６は第２の基板、７は絵素スイッチ素子、８
は走査線、９は絵素電極、１０は液晶層であり以上は第
１図の構成と同様なものである。In FIG. 3, 1 is a first substrate, 2 is a transparent substrate, 3 is a transparent electrode, 6 is a second substrate, 7 is a pixel switch element, and 8
1 is a scanning line, 9 is a picture element electrode, and 10 is a liquid crystal layer, which is the same as the structure shown in FIG.
第１図の構成と異なるのは５の金属薄膜の両側を４の光
吸収膜でサンドインチした３層で構成されている点であ
る。本実施例では、２の透明基板を透過して４の光吸収
膜に当たった光と１０の液晶層を透過して４の光吸収膜
に当たった光との両方を吸収する。第３図（ａ）と第３
図（′ｂ）では３の透明電極と４の光吸収膜、５の金属
薄膜との位置関係が違うが同し効果が得られる。本実施
例は、１の透明基板を透過して４の光吸収膜に強い光が
当たりかつ１０の液晶層を透過して４の光吸収膜に強い
光が当たる場合にを効である。The structure differs from that shown in FIG. 1 in that it is composed of three layers in which a thin metal film 5 is sandwiched between light absorbing films 4 on both sides. In this embodiment, both the light that passes through the transparent substrate 2 and hits the light absorption film 4 and the light that passes through the liquid crystal layer 10 and hits the light absorption film 4 are absorbed. Figure 3(a) and 3rd
In Figure ('b), although the positional relationship between the transparent electrode 3, the light absorption film 4, and the metal thin film 5 is different, the same effect can be obtained. This embodiment is effective when strong light passes through the transparent substrate 1 and hits the light absorption film 4, and strong light passes through the liquid crystal layer 10 and hits the light absorption film 4.
なお、第１の実施例、第２の実施例、第３の実施例のい
ずれの場合でも同じであるが、４の光吸収膜の光吸収係
数が大きいことが望ましい。ここで言う光吸収係数は、
以下のように定義される。Note that, although it is the same in any of the first, second, and third embodiments, it is desirable that the light absorption coefficient of the light absorption film 4 is large. The light absorption coefficient referred to here is
It is defined as below.
光吸収係数をα、光吸収膜の厚みをｄ、この膜に入射す
る光の強度を■。、この膜を透過して出てきた光の強度
を１とすると、αは、
α＝ （１ｎ （Ｉ０／ Ｉ） ） ／ｄである。The light absorption coefficient is α, the thickness of the light absorption film is d, and the intensity of light incident on this film is ■. , when the intensity of the light transmitted through this film and coming out is 1, α is α=(1n(I0/I))/d.
いま吸収したい光の波長領域が可視光全部であれば、４
００ ｎ ｍから７００ ｎ ｍの波長領域において高
い光吸収係数であることが望ましい。また吸収したい光
の波長領域が限られていれば、そ限られた波長範囲でだ
け高い光吸収係数であればよい。If the wavelength range of the light you want to absorb now is all visible light, then 4
It is desirable that the light absorption coefficient be high in the wavelength range from 00 nm to 700 nm. Furthermore, if the wavelength range of the light to be absorbed is limited, it is sufficient that the light absorption coefficient is high only in that limited wavelength range.
たとえばプラセオジム・マンガン・酸素薄膜は４００ｎ
ｍから７００ｎｍの波長領域において１０’ｃｍ−’以
上の光吸収係数があり可視光全部において有効である。For example, a praseodymium/manganese/oxygen thin film is 400n
It has a light absorption coefficient of 10'cm-' or more in the wavelength range from m to 700nm, and is effective for all visible light.
ほかに炭化アモルファスシリコン薄膜も可視光全部にお
いて有効である。またたとえばアモルファスシリコン薄
膜は、５００ｎｍより短波長側で大きな光吸収係数を示
し、この波長範囲の光、たとえば青色光に有効である。In addition, amorphous silicon carbide thin films are also effective in all visible light. For example, an amorphous silicon thin film exhibits a large light absorption coefficient at wavelengths shorter than 500 nm, and is effective for light in this wavelength range, for example, blue light.
また第１図、第２図、第３図中に示す９の絵素電極は透
明電極でも不透明電極でもかまわない。Further, the picture element electrode 9 shown in FIGS. 1, 2, and 3 may be either a transparent electrode or an opaque electrode.
たとえば透明電極としては、ＩＴＯｌまた不透明電極と
してアルミニウムやクロムでもよい。For example, the transparent electrode may be ITOl, and the opaque electrode may be aluminum or chromium.
発明の効果
以上のように本発明は、金属薄膜と光吸収膜との２層、
または金属薄膜の両側を光吸収膜でサンドインチした３
層で構成された遮光膜を備えることにより十分な黒レベ
ルを創出できる液晶表示装置を提供することができる。Effects of the Invention As described above, the present invention has two layers of a metal thin film and a light absorption film,
Or sandwiching both sides of the metal thin film with light absorbing films 3
By providing a light shielding film composed of layers, it is possible to provide a liquid crystal display device that can create a sufficient black level.
第１図は本発明の第１の実施例における液晶表示装置の
断面図、第２図は本発明の第２の実施例における液晶表
示装置の断面図、第３図は本発明の第３の実施例におけ
る液晶表示装置の断面図、第４図は従来の液晶表示装置
の断面図である。
■・・・・・・第１の基板、２・・・・・・透明基板、
３・・・・・・透明電極、４・・・・・・光吸収膜、５
・・・・・・金属薄膜、６・・・・・・第２の基板、７
・・・・・・絵素スイッチ素子、８・・・・・・走査線
、９・・・・・・絵素電極、１ｏ・・・・・・液晶層、
１１・・・・・・遮光膜。
代理人の氏名 弁理士 粟野重孝 はか１名第１の４叛
通 ｆｉｌｌ 暮 犠
迩 明 電 １
メ乙叩啼７ｗ＃
２ 胤 漬 繰
１１２の番報
乾豫スイッ子稟子
走電緯
秘賽電伽
液晶層
ＩＩＡ＋ の基仮
透明ａＬ伽
遣ａ１１電ｉ
ｖ ２ の ４！ 籾
秘第ス１ツテ本子
走ｆ［１Ｉｌ
ｋ’ｌ Ｅｌｋ
滑晶層
第２図
蔦 ； Φ 暮 棲
曖 Ｂ８ 暮 仮
逗 明ｇ１％１
光 明 啄 曖
命 ａＬ ＋Ｉ １％！Ｉ
ｗＡ ２ の １！ 緩
に零スインテ零子
走電 −
縮 素’ＩＦ伽
潰品眉
（α］
□−／Ｑ
ｖｌのに悟
燻 ８８ 蔓 惟
ｔＳ Ｓ電極
顎 ２ の １ ＠
絵 像 ｔ 慟
液晶層
鵡 ｆｉｌｌ
一一−ＩＯ1 is a sectional view of a liquid crystal display device according to a first embodiment of the present invention, FIG. 2 is a sectional view of a liquid crystal display device according to a second embodiment of the present invention, and FIG. 3 is a sectional view of a liquid crystal display device according to a third embodiment of the present invention. A cross-sectional view of the liquid crystal display device in the embodiment, and FIG. 4 is a cross-sectional view of a conventional liquid crystal display device. ■...First substrate, 2...Transparent substrate,
3...Transparent electrode, 4...Light absorption film, 5
...Metal thin film, 6...Second substrate, 7
...Picture element switch element, 8...Scanning line, 9...Picture element electrode, 1o...Liquid crystal layer,
11... Light shielding film. Agent's name: Patent attorney Shigetaka Awano 1 person 1st 4 rebellion fill 1 message 7w # 2 112 phone number The basic transparent aL of the liquid crystal layer IIA+ is a11 electric i v 2 of 4! The first part of the mystery is the first time of the main course f[1Il k'l Elk The second figure of the smooth crystal layer; I wA 2 no 1! Slowly zero-sinte zero-electrotaxis - contraction element' IF catastrophe eyebrow (α) □-/Q vl nonigofu 88 vine tS S electrode jaw 2 of 1 @ picture t liquid crystal layer fill 11 -IO
Claims (6)
を含む第１の基板と、絵素スイッチ素子と走査線と前記
絵素スイッチ素子で駆動されるマトリクス状に配置され
た絵素電極を含むアクティブマトリクスアレイとが形成
された第２の基板と、前記第１の基板と前記第２の基板
との対向間隙に封入された液晶層と、を具備して成る液
晶表示装置であって、前記遮光膜は金属薄膜と光吸収膜
との２層で構成されていることを特徴とする液晶表示装
置。(1) A first substrate including a transparent substrate that transmits visible light, a transparent electrode, and a light-shielding film, a pixel switch element, a scanning line, and picture elements arranged in a matrix that are driven by the picture element switch element. A liquid crystal display device comprising: a second substrate on which an active matrix array including electrodes is formed; and a liquid crystal layer sealed in a gap between the first substrate and the second substrate. The liquid crystal display device is characterized in that the light-shielding film is composed of two layers: a metal thin film and a light-absorbing film.
を含む第１の基板と、絵素スイッチ素子と走査線と前記
絵素スイッチ素子で駆動されるマトリクス状に配置され
た絵素電極を含むアクティブマトリクスアレイとが形成
された第２の基板と、前記第１の基板と前記第２の基板
との対向間隙に封入された液晶層と、を具備して成る液
晶表示装置であって、前記遮光膜は金属薄膜と光吸収膜
から成り、前記金属薄膜の両側を前記光吸収膜でサンド
イッチした３層で構成されていることを特徴とする液晶
表示装置。(2) A first substrate including a transparent substrate that transmits visible light, a transparent electrode, and a light-shielding film, a pixel switch element, a scanning line, and picture elements arranged in a matrix driven by the picture element switch element. A liquid crystal display device comprising: a second substrate on which an active matrix array including electrodes is formed; and a liquid crystal layer sealed in a gap between the first substrate and the second substrate. The liquid crystal display device is characterized in that the light shielding film is composed of a metal thin film and a light absorption film, and is composed of three layers in which both sides of the metal thin film are sandwiched with the light absorption film.
ン、タンタルおよびそれらの合金を用いることを特徴と
する請求項（１）記載の液晶表示装置。(3) The liquid crystal display device according to claim (1), wherein the metal thin film is made of chromium, nickel, tungsten, tantalum, or an alloy thereof.
ン、タンタルおよびそれらの合金を用いることを特徴と
する請求項（２）記載の液晶表示装置。(4) The liquid crystal display device according to claim (2), wherein the metal thin film is made of chromium, nickel, tungsten, tantalum, or an alloy thereof.
上であることを特徴とする請求項（１）記載の液晶表示
装置。(5) The liquid crystal display device according to claim (1), wherein the light absorption coefficient of the light absorption film is 10^9 cm^-^1 or more.
上であることを特徴とする請求項（２）記載の液晶表示
装置。(6) The liquid crystal display device according to claim (2), wherein the light absorption coefficient of the light absorption film is 10^3 cm^-^1 or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2103483A JPH041728A (en) | 1990-04-19 | 1990-04-19 | Liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2103483A JPH041728A (en) | 1990-04-19 | 1990-04-19 | Liquid crystal display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH041728A true JPH041728A (en) | 1992-01-07 |
Family
ID=14355257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2103483A Pending JPH041728A (en) | 1990-04-19 | 1990-04-19 | Liquid crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH041728A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0777684A (en) * | 1993-09-09 | 1995-03-20 | Nec Corp | Liquid crystal display device |
| EP0709715A2 (en) | 1994-10-28 | 1996-05-01 | Nec Corporation | Color liquid crystal display |
| US6366332B1 (en) | 1996-03-08 | 2002-04-02 | Canon Kabushiki Kaisha | Display apparatus and process for production thereof |
| US6770908B2 (en) | 2000-07-26 | 2004-08-03 | Seiko Epson Corporation | Electro-optical device, substrate for electro-optical device, and projecting type display device |
| US6912020B2 (en) * | 2000-08-07 | 2005-06-28 | Seiko Epson Corporation | Electro-optical apparatus, electronic device, substrate for use in an electro-optical apparatus, method of producing a substrate for use in an electro-optical apparatus, and light shielding film |
| US7245330B2 (en) | 2001-12-12 | 2007-07-17 | Seiko Epson Corporation | Electrooptic device, liquid crystal device, and projection display device with line defects |
| JP2009047822A (en) * | 2007-08-17 | 2009-03-05 | Epson Imaging Devices Corp | Liquid crystal display device and electronic equipment |
-
1990
- 1990-04-19 JP JP2103483A patent/JPH041728A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0777684A (en) * | 1993-09-09 | 1995-03-20 | Nec Corp | Liquid crystal display device |
| EP0709715A2 (en) | 1994-10-28 | 1996-05-01 | Nec Corporation | Color liquid crystal display |
| US6366332B1 (en) | 1996-03-08 | 2002-04-02 | Canon Kabushiki Kaisha | Display apparatus and process for production thereof |
| US6770908B2 (en) | 2000-07-26 | 2004-08-03 | Seiko Epson Corporation | Electro-optical device, substrate for electro-optical device, and projecting type display device |
| US6912020B2 (en) * | 2000-08-07 | 2005-06-28 | Seiko Epson Corporation | Electro-optical apparatus, electronic device, substrate for use in an electro-optical apparatus, method of producing a substrate for use in an electro-optical apparatus, and light shielding film |
| US7245330B2 (en) | 2001-12-12 | 2007-07-17 | Seiko Epson Corporation | Electrooptic device, liquid crystal device, and projection display device with line defects |
| JP2009047822A (en) * | 2007-08-17 | 2009-03-05 | Epson Imaging Devices Corp | Liquid crystal display device and electronic equipment |
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