JP2523697B2 - Projection type liquid crystal display device - Google Patents
Projection type liquid crystal display deviceInfo
- Publication number
- JP2523697B2 JP2523697B2 JP26030387A JP26030387A JP2523697B2 JP 2523697 B2 JP2523697 B2 JP 2523697B2 JP 26030387 A JP26030387 A JP 26030387A JP 26030387 A JP26030387 A JP 26030387A JP 2523697 B2 JP2523697 B2 JP 2523697B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- display device
- projection type
- crystal display
- type liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Liquid Crystal (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、液晶パネル面の画像をスクリーン上に投射
して大画面の画像を表示する装置の液晶パネルに関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal panel of an apparatus for displaying an image on a large screen by projecting an image on the surface of the liquid crystal panel on the screen.
従来の技術 近年、大画面の画像表示装置の実用化する試みが盛ん
であるが、その中で画面の明るさが十分に得られ、装置
の小型化、軽量化ができるという利点を有することから
液晶パネル面の画像をスクリーン上に投射して画像を表
示する投射式液晶画像表示装置が注目されている。2. Description of the Related Art In recent years, many attempts have been made to put a large-screen image display device into practical use. Among them, it has the advantages that sufficient screen brightness is obtained and the device can be made smaller and lighter. Attention has been paid to a projection type liquid crystal image display device which displays an image by projecting an image on a liquid crystal panel surface onto a screen.
第3図に投射式液晶表示装置の原理図を示す。光源1
とレンズ2、4、およびスクリーン5に対し、画像を形
成する液晶パネル3が配置される。通常この液晶パネル
は、高い解像度を得るために一方のガラス基板に薄膜ト
ランジスタ(TFT)を搭載し、これにより液晶を駆動す
るアクティブマトリクス方式を採用している。このTFT
の半導体層には多結晶シリコンまたは非晶質シリコンが
使われる。一方、対向するガラス基板にはTFTへ光が入
射するのを妨げる光遮蔽構造物が形成されている。この
液晶パネル3は第3図において光遮蔽構造物を形成して
あるガラス基板が光源側になるように配置されている。FIG. 3 shows a principle view of the projection type liquid crystal display device. Light source 1
A liquid crystal panel 3 for forming an image is arranged on the lenses 2, 4 and the screen 5. In general, this liquid crystal panel has an active matrix system in which a thin film transistor (TFT) is mounted on one glass substrate in order to obtain high resolution, and a liquid crystal is driven by this. This TFT
Polycrystalline silicon or amorphous silicon is used for the semiconductor layer. On the other hand, a light blocking structure that prevents light from entering the TFT is formed on the opposing glass substrate. The liquid crystal panel 3 is arranged so that the glass substrate on which the light shielding structure is formed is on the light source side in FIG.
従来この光遮蔽構造物は黒に染色されたゼラチンなど
の有機物質やクロム等の反射率の低い金属により形成さ
れていた。Conventionally, this light shielding structure has been formed of an organic substance such as gelatin dyed in black or a metal having a low reflectance such as chromium.
発明が解決しようとする問題点 ところで投射式液晶表示装置ではスクリーンに投射す
るために光源の輝度が非常に高く、パネル面上での照度
が非常に大きくなる。この結果時間と共に液晶パネルの
温度が上昇するが、前述の光遮蔽構造物は光を吸収し易
いうえにパネル全体の面積の50%前後を占めるためこの
パネル温度上昇を助長し、この時パネル温度は50〜60℃
に達する。それにともなってTFTの動作が劣化(OFF電流
の上昇)したり、あるいは液晶の膨張によるパネルのギ
ャップの変化による画質の劣化が発生する。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention In a projection type liquid crystal display device, since the light is projected on the screen, the brightness of the light source is very high, and the illuminance on the panel surface becomes very large. As a result, the temperature of the liquid crystal panel rises with time, but since the above-mentioned light shielding structure easily absorbs light and occupies around 50% of the total area of the panel, this panel temperature rise is promoted. Is 50-60 ℃
Reach Along with that, the operation of the TFT is deteriorated (the OFF current is increased), or the image quality is deteriorated due to the change in the panel gap due to the expansion of the liquid crystal.
問題点を解決するための手段 本発明はかかる問題点にのぞみなされたもので、光遮
蔽構造物の光入射側をアルミニウムなどの90%以上の反
射率を有する物質で形成する。Means for Solving the Problems The present invention has been made to solve these problems, and the light-incident side of the light-shielding structure is formed of a material such as aluminum having a reflectance of 90% or more.
また、上述の光遮蔽構造物の表面を黒化処理、あるい
はクロム等の反射率の低い物質で覆う。Further, the surface of the above-mentioned light shielding structure is blackened or covered with a substance having a low reflectance such as chrome.
作用 本発明は上記技術的手段によりパネル面に到達した赤
外線等の光の吸収を小さくして液晶パネルの温度上昇を
抑制でき、画質の劣化を生じることのない投射式液晶表
示装置を提供する。また、反射率の低い物質で覆った光
遮蔽構造物にすることにより散乱光による画質の劣化を
さらに抑制できる。The present invention provides a projection type liquid crystal display device which can suppress the temperature rise of the liquid crystal panel by reducing the absorption of light such as infrared rays reaching the panel surface by the above-mentioned technical means, without causing deterioration of image quality. Further, by using a light shielding structure covered with a substance having a low reflectance, deterioration of image quality due to scattered light can be further suppressed.
実施例 以下、本発明の実施例について説明する。Examples Hereinafter, examples of the present invention will be described.
本発明の実施例を第1図に示す。この図は本発明の投
射式液晶表示装置に用いる液晶パネルの概略構造断面図
である。第1図において、31はTFTを搭載するガラス基
板、32は非晶質シリコンTFT、33は表示電極、34は対向
ガラス基板、35は対向表示電極、36はアルミニウムより
る光遮蔽構造物、37は液晶である。図に示すように光遮
蔽構造物36はTFT32に重なるように形成される。An embodiment of the present invention is shown in FIG. This drawing is a schematic structural sectional view of a liquid crystal panel used in the projection type liquid crystal display device of the present invention. In FIG. 1, 31 is a glass substrate on which a TFT is mounted, 32 is an amorphous silicon TFT, 33 is a display electrode, 34 is a counter glass substrate, 35 is a counter display electrode, 36 is a light shielding structure made of aluminum, 37 Is a liquid crystal. As shown in the figure, the light shielding structure 36 is formed so as to overlap the TFT 32.
投射式液晶表示装置に用いる液晶パネルの構造を上述
のようにすることにより長時間動作しても液晶パネルの
温度を40℃以下にすることができる。この結果TFTのOFF
電流の上昇が室温のときに比べ1桁以内に抑制でき、動
作直後からのコントラストの低下などの画質の劣化を防
止できる。By making the structure of the liquid crystal panel used in the projection type liquid crystal display device as described above, the temperature of the liquid crystal panel can be kept at 40 ° C. or lower even when it is operated for a long time. As a result, the TFT is turned off.
The increase in current can be suppressed within one digit as compared with the case of room temperature, and deterioration of image quality such as deterioration of contrast immediately after the operation can be prevented.
次に他の実施例について説明する。 Next, another embodiment will be described.
第2図はその実施例を示す図であり、前述の実施例と
同様液晶パネルの概略構造断面図である。本実施例では
図に示す用にアルミニウムの光遮蔽構造物36の表面にク
ロム38を被着する。本実施例によれば、前述の実施例と
同様液晶パネルの温度を40℃以下に抑制でき、更に反射
率の低いクロムを光遮蔽構造物の表面に配することによ
り第2図中に点線で示すような散乱光によるTFTへの光
入射を抑制でき、即ち光によるTFTの動作特性の劣化に
ともなう画質の劣化を防止できる。FIG. 2 is a view showing the embodiment and is a schematic structural sectional view of a liquid crystal panel similar to the above-mentioned embodiment. In this embodiment, chromium 38 is deposited on the surface of the aluminum light shielding structure 36 as shown in the figure. According to this embodiment, the temperature of the liquid crystal panel can be suppressed to 40 ° C. or less as in the above-mentioned embodiments, and chromium having a low reflectance is arranged on the surface of the light shielding structure, so that the dotted line in FIG. The incidence of light on the TFT due to the scattered light as shown can be suppressed, that is, the deterioration of the image quality due to the deterioration of the operating characteristics of the TFT due to the light can be prevented.
発明の効果 以上述べてきたように、本発明によれば、液晶パネル
の光遮蔽構造物の主材料をアルミニウム等の90%以上の
反射率を有する物質にすることにより、液晶パネルに到
達する光の吸収を小さくでき、その結果液晶パネルの温
度上昇を抑制でき、投射式液晶表示装置の画質の劣化を
防止できる効果を有する。EFFECTS OF THE INVENTION As described above, according to the present invention, by making the main material of the light-shielding structure of a liquid crystal panel a substance having a reflectance of 90% or more, such as aluminum, the light reaching the liquid crystal panel Of the liquid crystal panel can be suppressed, and as a result, the temperature rise of the liquid crystal panel can be suppressed, and the deterioration of the image quality of the projection type liquid crystal display device can be prevented.
第1図、第2図は本発明の実施例において投射式液晶表
示装置に用いる液晶パネルの概略構造断面図、第3図は
投射式液晶表示装置の原理図を示す図である。 1……光源、3……液晶パネル、5……スクリーン、
6、7……偏光板、32……非晶質シリコンTFT、36……
光遮蔽構造物、37……液晶、38……クロム。FIG. 1 and FIG. 2 are schematic structural sectional views of a liquid crystal panel used in a projection type liquid crystal display device in an embodiment of the present invention, and FIG. 3 is a diagram showing a principle diagram of the projection type liquid crystal display device. 1 ... Light source, 3 ... Liquid crystal panel, 5 ... Screen,
6, 7 ... Polarizing plate, 32 ... Amorphous silicon TFT, 36 ...
Light-shielding structure, 37 …… liquid crystal, 38 …… chrome.
Claims (4)
に画像を表示する投射式液晶表示装置において、光源か
らスクリーンまでの光路にある液晶パネルは薄膜トラン
ジスタを搭載したガラス基板と、光遮蔽構造物を有する
ガラス基板とを、前記薄膜トランジスタと前記光遮蔽構
造物が形成された主面を対向内面となるように対向して
構成され、前記薄膜トランジスタを搭載したガラス基板
をスクリーン側に、前記光遮蔽構造物を有するガラス基
板を光源側に配置し、前記光遮蔽構造物の光源側が高い
反射率の材料から構成されることを特徴とする投射式液
晶表示装置。1. In a projection type liquid crystal display device in which light is controlled by a liquid crystal panel to display an image on a screen, the liquid crystal panel in the optical path from the light source to the screen comprises a glass substrate on which a thin film transistor is mounted and a light shielding structure. The glass substrate having, the thin film transistor and the light shielding structure is formed so as to face the main surface is formed as a facing inner surface, the glass substrate on which the thin film transistor is mounted on the screen side, the light shielding structure A projection type liquid crystal display device, characterized in that a glass substrate having: is disposed on the light source side, and the light source side of the light shielding structure is made of a material having a high reflectance.
い表面層が反射率の低い材料で覆われていることを特徴
とする特許請求の範囲第1項記載の投射式液晶表示装
置。2. The projection type liquid crystal display device according to claim 1, wherein a surface layer of the light shielding structure near the thin film transistor is covered with a material having a low reflectance.
リコンであることを特徴とする特許請求の範囲第1項記
載の投射式液晶表示装置。3. The projection type liquid crystal display device according to claim 1, wherein the semiconductor material of the thin film transistor is amorphous silicon.
成されていることを特徴とする特許請求の範囲第1項記
載の投射式液晶表示装置。4. The projection type liquid crystal display device according to claim 1, wherein a part of the light shielding structure is made of aluminum.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26030387A JP2523697B2 (en) | 1987-10-15 | 1987-10-15 | Projection type liquid crystal display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26030387A JP2523697B2 (en) | 1987-10-15 | 1987-10-15 | Projection type liquid crystal display device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01102430A JPH01102430A (en) | 1989-04-20 |
JP2523697B2 true JP2523697B2 (en) | 1996-08-14 |
Family
ID=17346159
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26030387A Expired - Fee Related JP2523697B2 (en) | 1987-10-15 | 1987-10-15 | Projection type liquid crystal display device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2523697B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2803532B2 (en) * | 1993-09-24 | 1998-09-24 | カシオ計算機株式会社 | Reflective active matrix liquid crystal display |
JP5298627B2 (en) * | 2008-05-12 | 2013-09-25 | ソニー株式会社 | Liquid crystal display element and projection display device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60120321A (en) * | 1983-12-02 | 1985-06-27 | Matsushita Electric Ind Co Ltd | Color liquid crystal display device |
JPS60239711A (en) * | 1984-05-14 | 1985-11-28 | Canon Inc | Transistor driving method |
JPS6321921U (en) * | 1986-07-25 | 1988-02-13 |
-
1987
- 1987-10-15 JP JP26030387A patent/JP2523697B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH01102430A (en) | 1989-04-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |