JPH04171990A - Piezoelectric ceramic sintered body - Google Patents
Piezoelectric ceramic sintered bodyInfo
- Publication number
- JPH04171990A JPH04171990A JP2300866A JP30086690A JPH04171990A JP H04171990 A JPH04171990 A JP H04171990A JP 2300866 A JP2300866 A JP 2300866A JP 30086690 A JP30086690 A JP 30086690A JP H04171990 A JPH04171990 A JP H04171990A
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric ceramic
- glass
- sintered body
- ceramic
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 42
- 239000011521 glass Substances 0.000 claims abstract description 27
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 235000006748 manganese carbonate Nutrition 0.000 claims abstract description 4
- 239000011656 manganese carbonate Substances 0.000 claims abstract description 4
- 229940093474 manganese carbonate Drugs 0.000 claims abstract description 4
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 claims abstract description 4
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 claims abstract description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 abstract description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 8
- 239000007772 electrode material Substances 0.000 abstract description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 4
- -1 SrO3 Chemical class 0.000 abstract description 3
- 229910002112 ferroelectric ceramic material Inorganic materials 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000006104 solid solution Substances 0.000 abstract description 3
- 229910000019 calcium carbonate Inorganic materials 0.000 abstract description 2
- 235000010216 calcium carbonate Nutrition 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 238000010304 firing Methods 0.000 description 6
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 4
- 230000010287 polarization Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229910011255 B2O3 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
- H10N30/053—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes by integrally sintering piezoelectric or electrostrictive bodies and electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
- H10N30/067—Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はアクチュエータ或いはセンサ等として使用する
圧電セラミック焼結体に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a piezoelectric ceramic sintered body used as an actuator, a sensor, or the like.
（従来の技術）
最近では強誘電性のセラミック（圧電セラミック）を用
いたアクチュエータ等が実際に応用されている。(Prior Art) Recently, actuators and the like using ferroelectric ceramics (piezoelectric ceramics) have been actually applied.
このアクチュエータは、チタン酸ジルコン酸鉛（ＰＺＴ
）等の強誘電性セラミックのグリーンシートに内部電極
となるｐｔやＰｄ−Ａｇペーストを印刷し、このグリー
ンシートを積層して１１００〜１２００℃の大気中で焼
成して作製している。This actuator is made of lead zirconate titanate (PZT).
), etc., are printed with PT or Pd-Ag paste to serve as internal electrodes, and the green sheets are laminated and fired in the atmosphere at 1100 to 1200°C.
（発明が解決しようとする課題）
上記したように従来にあっては、電極材料として高温の
大気中でセラミックを焼成する際に酸化しないｐｔやＰ
ｄ−Ａｇを用いているが、Ｐｔ電極は極めて高価であり
量産に向かず、またＰｄ−Ａｇ電極はＡｇがイオン化し
て電極周囲のセラミック表面に析出し最終的には２つの
電極か導通してしまうマイグレーションを引き起こす不
利がある。(Problems to be Solved by the Invention) As mentioned above, in the past, electrode materials such as PT and P, which do not oxidize when firing ceramics in high-temperature atmosphere, have been used as electrode materials.
d-Ag is used, but Pt electrodes are extremely expensive and are not suitable for mass production.Also, with Pd-Ag electrodes, Ag ionizes and precipitates on the ceramic surface around the electrodes, eventually causing electrical conduction between the two electrodes. This has the disadvantage of causing migration.
そこで、電極材料として安価で且つマイグレーションを
起こさないＣｕやＮｉを用いることが考えられるか、Ｃ
ｕやＮｉは酸化しやすいので還元性雰囲気で焼成しなけ
ればならず、還元性雰囲気で焼成すると今度はセラミッ
クの圧電特性が劣化する。Therefore, it may be possible to use Cu or Ni, which is inexpensive and does not cause migration, as an electrode material.
Since u and Ni are easily oxidized, they must be fired in a reducing atmosphere, and if fired in a reducing atmosphere, the piezoelectric properties of the ceramic will deteriorate.
（課題を解決するための手段）
上記課題を解決すべく本発明は、圧電セラミック素材中
に熱膨張係数が圧電セラミックと略等しく且つ圧電セラ
ミックと反応しにくい成分からなるガラスを添加した状
態で焼成するようにした。(Means for Solving the Problems) In order to solve the above problems, the present invention provides a piezoelectric ceramic material in which a glass having a coefficient of thermal expansion approximately equal to that of the piezoelectric ceramic and containing a component that is difficult to react with the piezoelectric ceramic is added and fired. I decided to do so.
（作用）
圧電セラミック中に所定の特性を有するガラスを所定量
添加すれば、還元性雰囲気で焼成しても抵抗率は高く分
極可能で、しかもクラック等の発生もなく強度的にも向
上する。(Function) If a predetermined amount of glass having predetermined characteristics is added to the piezoelectric ceramic, the resistivity is high and polarization is possible even when fired in a reducing atmosphere, and the strength is also improved without the occurrence of cracks.
（実施例） 以下に本発明の実施例を添付図面に基いて説明する。(Example) Embodiments of the present invention will be described below with reference to the accompanying drawings.
第１図は本発明の圧電セラミック焼結体からなるアクチ
ュエータの断面図であり、このアクチュエータは多数の
圧電セラミック層１・・・の間に。FIG. 1 is a sectional view of an actuator made of a piezoelectric ceramic sintered body according to the present invention, and this actuator is arranged between a large number of piezoelectric ceramic layers 1.
端子につなかる電極層２・・・と一端子につなかる電極
層３・・・を形成して成る。An electrode layer 2 connected to a terminal and an electrode layer 3 connected to one terminal are formed.
ここで、上記のアクチュエータを作製するには、ＰＺＴ
等の強誘電性セラミック材料にガラス及びヒラようにお
うじて、５ｒＣ０３、ＣａＣＯ３、ＢａＣＯ３等の２価
の金属化合物や炭酸マンガン又は酸化マンガンを添加し
、これを混練してシート状としたセラミックグリーンシ
ート表面にＣｕまたはＮｉの電極材料ペーストを印刷し
、窒素或いは水素混合窒素等の還元性雰囲気において焼
成することで作成する。Here, in order to manufacture the above actuator, PZT
Ceramic green sheets are made into sheets by adding divalent metal compounds such as 5rC03, CaCO3, BaCO3, manganese carbonate or manganese oxide to ferroelectric ceramic materials such as glass and fillet, and kneading the mixture. It is created by printing a Cu or Ni electrode material paste on the surface and firing it in a reducing atmosphere such as nitrogen or hydrogen mixed with nitrogen.
第２図は強誘電性セラミック材料に対し２価の金属イオ
ンを過剰に置換した場合、及びＭｎＣ０ａとガラスを添
加添加した場合の抵抗率を示すグラフであり、強誘電性
セラミック材料としては次式％式％
また、実験は上記の材料を十分に混合粉砕して直径が１
５〜３０ｎ＋＋ｎで厚さが２〜５ ｍｍの成形体とし、
この成形体を大気中、窒素及び水素混合窒素雰囲気で１
１００〜１１５０℃で焼成し、電気的性質を測定する場
合には厚さを１ ｍに研磨した後、両面に金をスパッタ
して電極とし、分極は８０°Ｃのシリコン油中で、３ｋ
ｖ／ｍｍの電界を３０分間印加して行なった。Figure 2 is a graph showing the resistivity when divalent metal ions are substituted excessively for the ferroelectric ceramic material and when MnC0a and glass are added. % formula % In addition, the experiment was conducted by thoroughly mixing and pulverizing the above materials until the diameter was 1
5 to 30n++n and a thickness of 2 to 5 mm,
This molded body was placed in the atmosphere, nitrogen and hydrogen in a mixed nitrogen atmosphere for 1 hour.
After firing at 100 to 1150°C and polishing to a thickness of 1 m when measuring electrical properties, gold is sputtered on both sides to form electrodes, and polarization is determined at 3k in silicone oil at 80°C.
The test was carried out by applying an electric field of v/mm for 30 minutes.
また機械的強度を測定する場合には、試料を断面２Ｘ１
．５ｍｍで長さが２５ｍｍの角柱状に加工して支持間隔
が１０ｍｍの小型３点曲試験機で測定した。In addition, when measuring mechanical strength, the sample should be
．． It was processed into a prismatic shape with a length of 5 mm and a length of 25 mm, and measured using a small three-point bending tester with a support interval of 10 mm.
第２図から明らかなように、セラミック材料のＡサイト
にＳｒ、Ｂａ、Ｃａ等の２価イオンを３ａｔ％過剰に置
換しても抵抗率はそれ程高くならないが、ガラスを添加
すると、還元性雰囲気で焼成しても抵抗率が１０１２Ω
・印以上になった。As is clear from Figure 2, even if the A site of the ceramic material is replaced with an excess of 3 at% of divalent ions such as Sr, Ba, Ca, etc., the resistivity does not increase that much, but when glass is added, the reducing atmosphere Resistivity is 1012Ω even when fired with
・It has become more than a mark.
そこで、どのような特性のガラスを用いるべきかを実験
した結果を以下の［表コに示す。Therefore, the results of an experiment to find out what kind of glass should be used are shown in the table below.
［表］
上記の［表］から、添加するガラスの成分としてはＰｂ
Ｏ，ＳｉＯ２，ＺｎＯ，Ｂ２Ｏ３，Ａｌ２Ｏ３からなる
ものとすることで、熱膨張係数をセラミックと路間−の
ものとすることができ、クラックの発生を防げ且つセラ
ミックと反応して固溶体を形成することもない。[Table] From the above [Table], the glass component to be added is Pb.
By using O, SiO2, ZnO, B2O3, and Al2O3, the coefficient of thermal expansion can be made equal to that of the ceramic, preventing the occurrence of cracks and forming a solid solution by reacting with the ceramic. Nor.
また第３図は上記成分のガラスの添加量と電気機械結合
係数及び圧電歪定数との関係を示すグラフであり、この
グラフからガラスを添加しないで還元性雰囲気で焼成す
ると、電気機械結合係数及び圧電歪定数は大巾に低下し
てアクチュエータとしての性能を発揮できないが、ガラ
スを添加することで両者とも大気中で焼成した場合の値
に近くなる。つまり、ガラスの添加割合を０．２〜２
、１ｗｔ％にすれば十分にアクチュエータとして使用し
得る特性の圧電セラミック焼成体が得られる。In addition, Figure 3 is a graph showing the relationship between the amount of glass added as the above component and the electromechanical coupling coefficient and piezoelectric strain constant.From this graph, it can be seen that when firing in a reducing atmosphere without adding glass, the electromechanical coupling coefficient and Although the piezoelectric strain constant drops significantly and cannot demonstrate its performance as an actuator, by adding glass, both values become close to those obtained when fired in the atmosphere. In other words, the addition ratio of glass is 0.2 to 2.
, 1 wt%, a piezoelectric ceramic fired body with sufficient characteristics to be used as an actuator can be obtained.
第４図は上記成分のガラスの添加量と抗折強度のワイブ
ル特性との関係を示すグラフであり、このグラフからガ
ラスの添加量が増加するにしたがって抗折強度が向上す
ることが分る。FIG. 4 is a graph showing the relationship between the amount of glass added as the above component and the Weibull characteristic of transverse strength. From this graph, it can be seen that as the amount of glass added increases, the transverse strength improves.
第５図は上記成分のガラスの添加量と誘電損失との関係
を示すグラフであり、このグラフからガラスの添加量が
増加するにしたがって誘電損失か大巾に減少することが
分る。FIG. 5 is a graph showing the relationship between the amount of glass added and the dielectric loss, and it can be seen from this graph that as the amount of glass added increases, the dielectric loss decreases significantly.
尚、実施例にあってはセラミックグリーンシートを積層
して焼成したアクチュエータを示したが、積層タイプ以
外に片面に２つ以上の電極を形成したＳＷＡフィルタ（
表面弾性波フィルタ）等としても本願の圧電セラミック
焼成体を用いることかできる。In addition, in the example, an actuator made by laminating and firing ceramic green sheets was shown, but in addition to the laminated type, SWA filters with two or more electrodes formed on one side (
The fired piezoelectric ceramic body of the present application can also be used as a surface acoustic wave filter (surface acoustic wave filter) or the like.
（効果）
以上に説明したように本発明によれば、ＰＺＴ等の強誘
電性セラミックを還元性雰囲気で焼成するにあたり、５
ｒＣＯｓ、Ｃａ ＣＯｓ、Ｂ ａＣＯｓ等の２価の金属
化合物や炭酸マンガン又は酸化マンガンを添加するよう
にしたので、抵抗率が高くなり分極を容易に行え、更に
誘電損失を減少させることができる。(Effects) As explained above, according to the present invention, when firing a ferroelectric ceramic such as PZT in a reducing atmosphere,
Since divalent metal compounds such as rCOs, CaCOs, and BaCOs, manganese carbonate, or manganese oxide are added, resistivity is increased, polarization can be easily performed, and dielectric loss can be further reduced.
そして、添加するガラスとして熱膨張係数がセラミック
の熱膨張係数とほぼ等しく且つセラミックと反応しない
ものを選定したので、クラックの発生や固溶体の生成が
なく、機械的な強度が向上する。Since a glass to be added has a coefficient of thermal expansion almost equal to that of the ceramic and does not react with the ceramic, the mechanical strength is improved without cracking or solid solution formation.
第１図は本発明の圧電セラミック焼結体からなるアクチ
ュエータの断面図、第２図は２価の金属化合物及びガラ
スの添加と抵抗率との関係を示すグラフ、第３図はガラ
スの添加量と電気機械結合係数及び圧電歪定数との関係
を示すグラフ、第４図はガラスの添加量と抗折強度のワ
イブル特性との関係を示すグラフ、第５図はガラスの添
加量と誘電損失との関係を示すグラフである。
尚、図面中１は圧電セラミック層、２．３は電極層であ
る。
特 許 出 願 人 東隣機器 株式会社永１）邦裕Figure 1 is a cross-sectional view of an actuator made of the piezoelectric ceramic sintered body of the present invention, Figure 2 is a graph showing the relationship between the addition of divalent metal compounds and glass and resistivity, and Figure 3 is the amount of glass added. Figure 4 is a graph showing the relationship between the amount of glass added and the Weibull characteristic of bending strength, and Figure 5 is the relationship between the amount of glass added and the dielectric loss. It is a graph showing the relationship between. In the drawings, 1 is a piezoelectric ceramic layer, and 2.3 is an electrode layer. Patent applicant Higashirin Kiki Co., Ltd. 1) Kunihiro
Claims (4)
エータ或いはセンサ等として使用する圧電セラミック焼
結体において、この圧電セラミック焼結体中には熱膨張
係数が圧電セラミックと略等しく且つ圧電セラミックと
反応しにくい成分からなるガラスを添加していることを
特徴とする圧電セラミック焼結体。(1) In a piezoelectric ceramic sintered body used as an actuator or sensor by forming a Cu or Ni electrode layer, the piezoelectric ceramic sintered body has a coefficient of thermal expansion approximately equal to that of the piezoelectric ceramic and reacts with the piezoelectric ceramic. A piezoelectric ceramic sintered body characterized by the addition of glass, which is made of a component that is difficult to oxidize.
価の金属化合物が添加されていることを特徴とする請求
項１に記載の圧電セラミック焼結体。(2) In addition to glass, the piezoelectric ceramic sintered body contains two
2. The piezoelectric ceramic sintered body according to claim 1, wherein a valent metal compound is added.
２価の金属化合物及び酸化マンガン又は炭酸マンガンが
添加されていることを特徴とする請求項１に記載の圧電
セラミック焼結体。(3) The piezoelectric ceramic sintered body according to claim 1, wherein a divalent metal compound and manganese oxide or manganese carbonate are added to the piezoelectric ceramic sintered body in addition to glass.
下としたことを特徴とする請求項１または２に記載の圧
電セラミック焼結体。(4) The piezoelectric ceramic sintered body according to claim 1 or 2, wherein the addition ratio of the glass is 0.2 to 2.1 wt% or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2300866A JPH04171990A (en) | 1990-11-06 | 1990-11-06 | Piezoelectric ceramic sintered body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2300866A JPH04171990A (en) | 1990-11-06 | 1990-11-06 | Piezoelectric ceramic sintered body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04171990A true JPH04171990A (en) | 1992-06-19 |
Family
ID=17890054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2300866A Pending JPH04171990A (en) | 1990-11-06 | 1990-11-06 | Piezoelectric ceramic sintered body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04171990A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0595644A1 (en) * | 1992-10-29 | 1994-05-04 | Nec Corporation | Flat packaged piezoelectric device using glass-ceramic composite material comprising forsterite |
| WO2001024287A2 (en) * | 1999-09-30 | 2001-04-05 | Robert Bosch Gmbh | Internal electrodes for a stacked piezoactuator and method for producing the same |
| WO2001045138A2 (en) * | 1999-12-16 | 2001-06-21 | Epcos Ag | Piezoelectric component |
| US6960271B2 (en) * | 2000-12-28 | 2005-11-01 | Denso Corporation | Laminate-type dielectric device, a production method and an electrode paste material |
| US6972060B2 (en) * | 2002-04-05 | 2005-12-06 | Nippon Soken, Inc. | Method for producing stacked ceramic body |
| KR100966194B1 (en) * | 2006-09-26 | 2010-06-25 | 가부시끼가이샤 도시바 | Ultrasonic probe |
-
1990
- 1990-11-06 JP JP2300866A patent/JPH04171990A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0595644A1 (en) * | 1992-10-29 | 1994-05-04 | Nec Corporation | Flat packaged piezoelectric device using glass-ceramic composite material comprising forsterite |
| WO2001024287A2 (en) * | 1999-09-30 | 2001-04-05 | Robert Bosch Gmbh | Internal electrodes for a stacked piezoactuator and method for producing the same |
| WO2001024287A3 (en) * | 1999-09-30 | 2002-04-04 | Bosch Gmbh Robert | Internal electrodes for a stacked piezoactuator and method for producing the same |
| WO2001045138A2 (en) * | 1999-12-16 | 2001-06-21 | Epcos Ag | Piezoelectric component |
| WO2001045138A3 (en) * | 1999-12-16 | 2002-03-14 | Epcos Ag | Piezoelectric component |
| DE10062672B4 (en) * | 1999-12-16 | 2010-01-21 | Epcos Ag | Piezoelectric component |
| US7855488B2 (en) | 1999-12-16 | 2010-12-21 | Epcos Ag | Piezoceramic device |
| US8209828B2 (en) | 1999-12-16 | 2012-07-03 | Epcos Ag | Method for making a piezoceramic device |
| DE10062672B9 (en) * | 1999-12-16 | 2012-07-12 | Epcos Ag | Piezoelectric component |
| US6960271B2 (en) * | 2000-12-28 | 2005-11-01 | Denso Corporation | Laminate-type dielectric device, a production method and an electrode paste material |
| US6972060B2 (en) * | 2002-04-05 | 2005-12-06 | Nippon Soken, Inc. | Method for producing stacked ceramic body |
| KR100966194B1 (en) * | 2006-09-26 | 2010-06-25 | 가부시끼가이샤 도시바 | Ultrasonic probe |
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