JPH04165655A - 高周波半導体装置 - Google Patents
高周波半導体装置Info
- Publication number
- JPH04165655A JPH04165655A JP2293232A JP29323290A JPH04165655A JP H04165655 A JPH04165655 A JP H04165655A JP 2293232 A JP2293232 A JP 2293232A JP 29323290 A JP29323290 A JP 29323290A JP H04165655 A JPH04165655 A JP H04165655A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- gate
- source
- chip
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
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- Computer Hardware Design (AREA)
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
(イ)産業上の利用分野
本発明は樹脂モールド型の高周波半導体装置に関する。
(ロ)従来の技術
GaAsショットキーバリアダイオード、GaAs−M
ESFET−HEMT等のマイクロ波用高周波半導体装
置では、扱う信号が高周波であるために誘電率が小さい
セラミックパッケージを用いている(例えば、特開昭6
2−249460号公報)。
ESFET−HEMT等のマイクロ波用高周波半導体装
置では、扱う信号が高周波であるために誘電率が小さい
セラミックパッケージを用いている(例えば、特開昭6
2−249460号公報)。
第3図に従来のセラミックパッケージ型の半導体装置を
示す。第3図において、(1)は絶縁基板であるセラミ
ック基板、(2)はマイクロ波素子を形成したGaAs
半導体チップ、〈3)は外部接続り−ド、(4)は金線
、(5)は蓋体である。
示す。第3図において、(1)は絶縁基板であるセラミ
ック基板、(2)はマイクロ波素子を形成したGaAs
半導体チップ、〈3)は外部接続り−ド、(4)は金線
、(5)は蓋体である。
セラミック基板(1)の表面および裏面には図示せぬメ
タライズが形成され、これらは同じくメタライズによっ
て電気的に接続される。外部リード(3)は裏面のメタ
ライズに銀ローで接続きれ−しいる。そしてセラミック
基板(1)表面のメタライズ上にはGaAs半導体チッ
プ(2)が半田(6)で固定され、金線(4)により各
メタライズとGaAs半導体チップ(2)間を接続し、
蓋体く5)を半FTI (=jけすることにより全体を
気密封止する。
タライズが形成され、これらは同じくメタライズによっ
て電気的に接続される。外部リード(3)は裏面のメタ
ライズに銀ローで接続きれ−しいる。そしてセラミック
基板(1)表面のメタライズ上にはGaAs半導体チッ
プ(2)が半田(6)で固定され、金線(4)により各
メタライズとGaAs半導体チップ(2)間を接続し、
蓋体く5)を半FTI (=jけすることにより全体を
気密封止する。
(ハ)発明が解決しようとする課題
しかしながら、上記セラミックパッケージはコスト高で
あり量産化に向かないという大きな問題点を有する。そ
のため量産化に適した樹脂モールドタイプのものを検討
するに致ったが、一般的なエポキシ系樹脂は誘電率が高
く(εr=4.1)、素子の高周波特性を損う欠点があ
った。尚、1−記セラミックパッケージは気密封止であ
るので、空気中の誘電率(εr=1.0)で済む。
あり量産化に向かないという大きな問題点を有する。そ
のため量産化に適した樹脂モールドタイプのものを検討
するに致ったが、一般的なエポキシ系樹脂は誘電率が高
く(εr=4.1)、素子の高周波特性を損う欠点があ
った。尚、1−記セラミックパッケージは気密封止であ
るので、空気中の誘電率(εr=1.0)で済む。
(ニ)課題を解決するための手段
本発明は上記従来の欠点に鑑み成きれ、チップ(11)
のソース電極(20)とソースリード(13)とを接続
するワイヤ(24)と、チップ(11)のゲート・ドレ
イン電極(19)(21)とゲート・ドレインリード(
14)(15)とを各々接続するワイヤ(22)(23
)と、ソースリード(13)に接続きれゲート電極(1
9)とドレイン電極(21)の間を通過12半導体チッ
プ<11)を横断するシールドワイヤ(25)とを具備
することにより、従来の欠点を解決するものである。
のソース電極(20)とソースリード(13)とを接続
するワイヤ(24)と、チップ(11)のゲート・ドレ
イン電極(19)(21)とゲート・ドレインリード(
14)(15)とを各々接続するワイヤ(22)(23
)と、ソースリード(13)に接続きれゲート電極(1
9)とドレイン電極(21)の間を通過12半導体チッ
プ<11)を横断するシールドワイヤ(25)とを具備
することにより、従来の欠点を解決するものである。
(本〉作用
本発明によれば、グー1電極(19)とドレイン電極(
21)との間を、ソースリードに接続したことによって
接地電位(GND)の如き最底電位が印加されたシール
ドワイヤ(25)が横断するので、シールド効果により
両者間の浮遊容量を低減できる。
21)との間を、ソースリードに接続したことによって
接地電位(GND)の如き最底電位が印加されたシール
ドワイヤ(25)が横断するので、シールド効果により
両者間の浮遊容量を低減できる。
従って樹脂モールドタイプのパッケージでも、高周波特
性を大幅に損うことなく製造できる6(へ)実施例 以トに本発明の一実施例を図面を参照しながら詳細に説
明する。
性を大幅に損うことなく製造できる6(へ)実施例 以トに本発明の一実施例を図面を参照しながら詳細に説
明する。
第1図は本発明による樹脂モールド型の半導体装置を示
す平面図、第2図は主要部の拡大平面図、第3図は第1
図の断面図である。
す平面図、第2図は主要部の拡大平面図、第3図は第1
図の断面図である。
〈11)は表面にGa、Asショットキーバリアダイオ
ードやGaAsM E S F E T等のマイクロ波
素子を形成したGaAs半導体チップ、(12)はGa
As半導体チップ<11)を固着するり一ドフレームの
アイランド、(13)は′アイランド(12)に連続し
て延在するソース用の外部接続リード、(14)と(1
5)はアイランド(12)に先端を近接する如く延在j
るゲート用の外部接続リードとじレイ〕/用の外部接続
リード、(16〉は金線等のワイヤ、(17)はGaA
s半導体半導フチク11)を含み主要部を封止して装置
の外形を形成する熱硬化性エポキシ樹脂である。
ードやGaAsM E S F E T等のマイクロ波
素子を形成したGaAs半導体チップ、(12)はGa
As半導体チップ<11)を固着するり一ドフレームの
アイランド、(13)は′アイランド(12)に連続し
て延在するソース用の外部接続リード、(14)と(1
5)はアイランド(12)に先端を近接する如く延在j
るゲート用の外部接続リードとじレイ〕/用の外部接続
リード、(16〉は金線等のワイヤ、(17)はGaA
s半導体半導フチク11)を含み主要部を封止して装置
の外形を形成する熱硬化性エポキシ樹脂である。
前記リードフレームは板厚0.111tllの銅系素材
から成る板状材料を打ち抜き加工したもので、表面には
Agメツキを拠しである。GaAs半導体半導フチ(1
1)はこのようなリードフレームのアイランド(12)
上に導i製接着剤(18)にて固定する。GaAs′f
−導体チップ(11)の表面にはホトリソグラフィー技
術によ−ってゲート・ソースおよびドlツインに対応す
るAN電極(19)(20)(21)を形成し7該電極
<19>(20)(21)と外部接続リード(13>(
14)(15)とをワイヤく16)でワイヤボンドする
ことにより電気接続する。
から成る板状材料を打ち抜き加工したもので、表面には
Agメツキを拠しである。GaAs半導体半導フチ(1
1)はこのようなリードフレームのアイランド(12)
上に導i製接着剤(18)にて固定する。GaAs′f
−導体チップ(11)の表面にはホトリソグラフィー技
術によ−ってゲート・ソースおよびドlツインに対応す
るAN電極(19)(20)(21)を形成し7該電極
<19>(20)(21)と外部接続リード(13>(
14)(15)とをワイヤく16)でワイヤボンドする
ことにより電気接続する。
ゲート用のワイヤ(22L ドレイン用のワイヤ(2
3)およびソース用のワイヤ<24〉は直列抵抗を下げ
るために各々が対応するリード(13)(14)(15
)に対して2点打ちされている。そして、2点打ちされ
たソース用のワイヤ<24)間の空間を利用して、ゲー
ト電極<19)とドレイン電極(21)との間を通過す
るシールドワイヤ(25〉をワイヤボンドする。シール
ドワイヤ(25)はソースリード(13)の一方から半
導体チップ(11)の上空を横断し他方のソースリード
(13)にセカンドボンドされる。他とは一切接触させ
ない。シールドワイヤ<25)は金線の他アルミ線等も
利用でき、太さが50L程度であればワイヤのたれによ
る短絡の危惧が無い。i極接続用のワイヤ(16)とシ
ールドワイヤ(25)とで太さを変えても良い。
3)およびソース用のワイヤ<24〉は直列抵抗を下げ
るために各々が対応するリード(13)(14)(15
)に対して2点打ちされている。そして、2点打ちされ
たソース用のワイヤ<24)間の空間を利用して、ゲー
ト電極<19)とドレイン電極(21)との間を通過す
るシールドワイヤ(25〉をワイヤボンドする。シール
ドワイヤ(25)はソースリード(13)の一方から半
導体チップ(11)の上空を横断し他方のソースリード
(13)にセカンドボンドされる。他とは一切接触させ
ない。シールドワイヤ<25)は金線の他アルミ線等も
利用でき、太さが50L程度であればワイヤのたれによ
る短絡の危惧が無い。i極接続用のワイヤ(16)とシ
ールドワイヤ(25)とで太さを変えても良い。
以」二に説明した本発明の構成によれば、ゲート電極(
19)とドレイン電極(21)との間をシールドワイヤ
(25)が通過するので、ソースリード(13)を介し
てシールドワイヤ(25)に接地電位(GND)の如き
最底電位を印加することにより、ゲートワイヤ(22)
とドレインワイヤ(21)間の浮遊容量を激減できる。
19)とドレイン電極(21)との間をシールドワイヤ
(25)が通過するので、ソースリード(13)を介し
てシールドワイヤ(25)に接地電位(GND)の如き
最底電位を印加することにより、ゲートワイヤ(22)
とドレインワイヤ(21)間の浮遊容量を激減できる。
そのため、誘電率が真空より高くなる封止モールドタイ
プのものでも、GaAsM E S F E Tの高周
波特性(Ga :付随利得)の損失を最小限に抑えるこ
とができる。
プのものでも、GaAsM E S F E Tの高周
波特性(Ga :付随利得)の損失を最小限に抑えるこ
とができる。
(ト)発明の効果
以上に説明した通り、本発明によればワイヤポンド手法
によりシールドワイヤ(25〉を形成したので、ゲート
とドレイン間の浮遊容量Cdgを激減できる利点を有す
る。そのため、樹脂モールドタイプでも素子の高周波特
性を大幅に損うことなく安価に組立てることができる利
点を有する。
によりシールドワイヤ(25〉を形成したので、ゲート
とドレイン間の浮遊容量Cdgを激減できる利点を有す
る。そのため、樹脂モールドタイプでも素子の高周波特
性を大幅に損うことなく安価に組立てることができる利
点を有する。
また、半導体チップ(11)の設計変更が全く不要であ
る利点をも有する。
る利点をも有する。
第1図は本発明を説明するための平面図、第2図は第1
図の拡大平面図、第3図は第1図の断面図、第4図は従
来例を説明するための断面図である。
図の拡大平面図、第3図は第1図の断面図、第4図は従
来例を説明するための断面図である。
Claims (3)
- (1)マイクロ波素子を形成した半導体チップと、 前記半導体チップの表面に形成したゲート・ソースおよ
びドレイン電極と、 前記半導体チップを固定するアイランドと、前記アイラ
ンドに連続するソースリードと、前記アイランドに先端
を近接するように延在するゲートおよびドレインリード
と、 前記ゲートおよびドレイン電極と前記ゲートおよびドレ
インリードとを接続するワイヤと、前記ソース電極と前
記ソースリードとを接続するワイヤと、 前記ソースリードに接続され前記ゲート電極と前記ドレ
イン電極との間を通過するように前記半導体チップを横
断するシールドワイヤとを具備することを特徴とする高
周波半導体装置。 - (2)前記ソースリードと前記ゲートおよびドレインリ
ードが十文字形状を成すことを特徴とする請求項第1項
記載の高周波半導体装置。 - (3)前記半導体チップを樹脂モールドしたことを特徴
とする請求項第1項記載の高周波半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2293232A JPH04165655A (ja) | 1990-10-29 | 1990-10-29 | 高周波半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2293232A JPH04165655A (ja) | 1990-10-29 | 1990-10-29 | 高周波半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04165655A true JPH04165655A (ja) | 1992-06-11 |
Family
ID=17792142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2293232A Pending JPH04165655A (ja) | 1990-10-29 | 1990-10-29 | 高周波半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04165655A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007500441A (ja) * | 2003-07-30 | 2007-01-11 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | ワイヤボンドボールグリッドアレイ用グランドアーチ |
JP6195031B1 (ja) * | 2016-10-24 | 2017-09-13 | 三菱電機株式会社 | 高周波増幅器 |
US20170263568A1 (en) * | 2016-03-10 | 2017-09-14 | Amkor Technology, Inc. | Semiconductor device having conductive wire with increased attachment angle and method |
JP2020027892A (ja) * | 2018-08-13 | 2020-02-20 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
-
1990
- 1990-10-29 JP JP2293232A patent/JPH04165655A/ja active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007500441A (ja) * | 2003-07-30 | 2007-01-11 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | ワイヤボンドボールグリッドアレイ用グランドアーチ |
US20170263568A1 (en) * | 2016-03-10 | 2017-09-14 | Amkor Technology, Inc. | Semiconductor device having conductive wire with increased attachment angle and method |
US10141269B2 (en) * | 2016-03-10 | 2018-11-27 | Amkor Technology, Inc. | Semiconductor device having conductive wire with increased attachment angle and method |
JP6195031B1 (ja) * | 2016-10-24 | 2017-09-13 | 三菱電機株式会社 | 高周波増幅器 |
WO2018078686A1 (ja) * | 2016-10-24 | 2018-05-03 | 三菱電機株式会社 | 高周波増幅器 |
CN109863592A (zh) * | 2016-10-24 | 2019-06-07 | 三菱电机株式会社 | 高频放大器 |
DE112016007370T5 (de) | 2016-10-24 | 2019-07-04 | Mitsubishi Electric Corporation | Hochfrequenzverstärker |
US10951174B2 (en) | 2016-10-24 | 2021-03-16 | Mitsubishi Electric Corporation | High-frequency amplifier |
CN109863592B (zh) * | 2016-10-24 | 2022-12-20 | 三菱电机株式会社 | 高频放大器 |
JP2020027892A (ja) * | 2018-08-13 | 2020-02-20 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
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