JPH04165655A - 高周波半導体装置 - Google Patents

高周波半導体装置

Info

Publication number
JPH04165655A
JPH04165655A JP2293232A JP29323290A JPH04165655A JP H04165655 A JPH04165655 A JP H04165655A JP 2293232 A JP2293232 A JP 2293232A JP 29323290 A JP29323290 A JP 29323290A JP H04165655 A JPH04165655 A JP H04165655A
Authority
JP
Japan
Prior art keywords
wire
gate
source
chip
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2293232A
Other languages
English (en)
Inventor
Mamoru Ando
守 安藤
Toshiaki Azumi
安曇　敏明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2293232A priority Critical patent/JPH04165655A/ja
Publication of JPH04165655A publication Critical patent/JPH04165655A/ja
Pending legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Waveguide Connection Structure (AREA)
  • Microwave Amplifiers (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （イ）産業上の利用分野 本発明は樹脂モールド型の高周波半導体装置に関する。
（ロ）従来の技術 ＧａＡｓショットキーバリアダイオード、ＧａＡｓ−Ｍ
ＥＳＦＥＴ−ＨＥＭＴ等のマイクロ波用高周波半導体装
置では、扱う信号が高周波であるために誘電率が小さい
セラミックパッケージを用いている（例えば、特開昭６
２−２４９４６０号公報）。
第３図に従来のセラミックパッケージ型の半導体装置を
示す。第３図において、（１）は絶縁基板であるセラミ
ック基板、（２）はマイクロ波素子を形成したＧａＡｓ
半導体チップ、〈３）は外部接続り−ド、（４）は金線
、（５）は蓋体である。
セラミック基板（１）の表面および裏面には図示せぬメ
タライズが形成され、これらは同じくメタライズによっ
て電気的に接続される。外部リード（３）は裏面のメタ
ライズに銀ローで接続きれ−しいる。そしてセラミック
基板（１）表面のメタライズ上にはＧａＡｓ半導体チッ
プ（２）が半田（６）で固定され、金線（４）により各
メタライズとＧａＡｓ半導体チップ（２）間を接続し、
蓋体く５）を半ＦＴＩ　（＝ｊけすることにより全体を
気密封止する。
（ハ）発明が解決しようとする課題 しかしながら、上記セラミックパッケージはコスト高で
あり量産化に向かないという大きな問題点を有する。そ
のため量産化に適した樹脂モールドタイプのものを検討
するに致ったが、一般的なエポキシ系樹脂は誘電率が高
く（εｒ＝４．１）、素子の高周波特性を損う欠点があ
った。尚、１−記セラミックパッケージは気密封止であ
るので、空気中の誘電率（εｒ＝１．０）で済む。
（ニ）課題を解決するための手段 本発明は上記従来の欠点に鑑み成きれ、チップ（１１）
のソース電極（２０）とソースリード（１３）とを接続
するワイヤ（２４）と、チップ（１１）のゲート・ドレ
イン電極（１９）（２１）とゲート・ドレインリード（
１４）（１５）とを各々接続するワイヤ（２２）（２３
）と、ソースリード（１３）に接続きれゲート電極（１
９）とドレイン電極（２１）の間を通過１２半導体チッ
プ＜１１）を横断するシールドワイヤ（２５）とを具備
することにより、従来の欠点を解決するものである。
（本〉作用 本発明によれば、グー１電極（１９）とドレイン電極（
２１）との間を、ソースリードに接続したことによって
接地電位（ＧＮＤ）の如き最底電位が印加されたシール
ドワイヤ（２５）が横断するので、シールド効果により
両者間の浮遊容量を低減できる。
従って樹脂モールドタイプのパッケージでも、高周波特
性を大幅に損うことなく製造できる６（へ）実施例 以トに本発明の一実施例を図面を参照しながら詳細に説
明する。
第１図は本発明による樹脂モールド型の半導体装置を示
す平面図、第２図は主要部の拡大平面図、第３図は第１
図の断面図である。
〈１１）は表面にＧａ、Ａｓショットキーバリアダイオ
ードやＧａＡｓＭ　Ｅ　Ｓ　Ｆ　Ｅ　Ｔ等のマイクロ波
素子を形成したＧａＡｓ半導体チップ、（１２）はＧａ
Ａｓ半導体チップ＜１１）を固着するり一ドフレームの
アイランド、（１３）は′アイランド（１２）に連続し
て延在するソース用の外部接続リード、（１４）と（１
５）はアイランド（１２）に先端を近接する如く延在ｊ
るゲート用の外部接続リードとじレイ〕／用の外部接続
リード、（１６〉は金線等のワイヤ、（１７）はＧａＡ
ｓ半導体半導フチク１１）を含み主要部を封止して装置
の外形を形成する熱硬化性エポキシ樹脂である。
前記リードフレームは板厚０．１１１ｔｌｌの銅系素材
から成る板状材料を打ち抜き加工したもので、表面には
Ａｇメツキを拠しである。ＧａＡｓ半導体半導フチ（１
１）はこのようなリードフレームのアイランド（１２）
上に導ｉ製接着剤（１８）にて固定する。ＧａＡｓ′ｆ
−導体チップ（１１）の表面にはホトリソグラフィー技
術によ−ってゲート・ソースおよびドｌツインに対応す
るＡＮ電極（１９）（２０）（２１）を形成し７該電極
＜１９＞（２０）（２１）と外部接続リード（１３＞（
１４）（１５）とをワイヤく１６）でワイヤボンドする
ことにより電気接続する。
ゲート用のワイヤ（２２Ｌ　　ドレイン用のワイヤ（２
３）およびソース用のワイヤ＜２４〉は直列抵抗を下げ
るために各々が対応するリード（１３）（１４）（１５
）に対して２点打ちされている。そして、２点打ちされ
たソース用のワイヤ＜２４）間の空間を利用して、ゲー
ト電極＜１９）とドレイン電極（２１）との間を通過す
るシールドワイヤ（２５〉をワイヤボンドする。シール
ドワイヤ（２５）はソースリード（１３）の一方から半
導体チップ（１１）の上空を横断し他方のソースリード
（１３）にセカンドボンドされる。他とは一切接触させ
ない。シールドワイヤ＜２５）は金線の他アルミ線等も
利用でき、太さが５０Ｌ程度であればワイヤのたれによ
る短絡の危惧が無い。ｉ極接続用のワイヤ（１６）とシ
ールドワイヤ（２５）とで太さを変えても良い。
以」二に説明した本発明の構成によれば、ゲート電極（
１９）とドレイン電極（２１）との間をシールドワイヤ
（２５）が通過するので、ソースリード（１３）を介し
てシールドワイヤ（２５）に接地電位（ＧＮＤ）の如き
最底電位を印加することにより、ゲートワイヤ（２２）
とドレインワイヤ（２１）間の浮遊容量を激減できる。
そのため、誘電率が真空より高くなる封止モールドタイ
プのものでも、ＧａＡｓＭ　Ｅ　Ｓ　Ｆ　Ｅ　Ｔの高周
波特性（Ｇａ　：付随利得）の損失を最小限に抑えるこ
とができる。
（ト）発明の効果 以上に説明した通り、本発明によればワイヤポンド手法
によりシールドワイヤ（２５〉を形成したので、ゲート
とドレイン間の浮遊容量Ｃｄｇを激減できる利点を有す
る。そのため、樹脂モールドタイプでも素子の高周波特
性を大幅に損うことなく安価に組立てることができる利
点を有する。
また、半導体チップ（１１）の設計変更が全く不要であ
る利点をも有する。
【図面の簡単な説明】
第１図は本発明を説明するための平面図、第２図は第１
図の拡大平面図、第３図は第１図の断面図、第４図は従
来例を説明するための断面図である。

Claims (3)

    【特許請求の範囲】
  1. （１）マイクロ波素子を形成した半導体チップと、 前記半導体チップの表面に形成したゲート・ソースおよ
    びドレイン電極と、 前記半導体チップを固定するアイランドと、前記アイラ
    ンドに連続するソースリードと、前記アイランドに先端
    を近接するように延在するゲートおよびドレインリード
    と、 前記ゲートおよびドレイン電極と前記ゲートおよびドレ
    インリードとを接続するワイヤと、前記ソース電極と前
    記ソースリードとを接続するワイヤと、 前記ソースリードに接続され前記ゲート電極と前記ドレ
    イン電極との間を通過するように前記半導体チップを横
    断するシールドワイヤとを具備することを特徴とする高
    周波半導体装置。
  2. （２）前記ソースリードと前記ゲートおよびドレインリ
    ードが十文字形状を成すことを特徴とする請求項第１項
    記載の高周波半導体装置。
  3. （３）前記半導体チップを樹脂モールドしたことを特徴
    とする請求項第１項記載の高周波半導体装置。
JP2293232A 1990-10-29 1990-10-29 高周波半導体装置 Pending JPH04165655A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2293232A JPH04165655A (ja) 1990-10-29 1990-10-29 高周波半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2293232A JPH04165655A (ja) 1990-10-29 1990-10-29 高周波半導体装置

Publications (1)

Publication Number Publication Date
JPH04165655A true JPH04165655A (ja) 1992-06-11

Family

ID=17792142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2293232A Pending JPH04165655A (ja) 1990-10-29 1990-10-29 高周波半導体装置

Country Status (1)

Country Link
JP (1) JPH04165655A (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007500441A (ja) * 2003-07-30 2007-01-11 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ ワイヤボンドボールグリッドアレイ用グランドアーチ
JP6195031B1 (ja) * 2016-10-24 2017-09-13 三菱電機株式会社 高周波増幅器
US20170263568A1 (en) * 2016-03-10 2017-09-14 Amkor Technology, Inc. Semiconductor device having conductive wire with increased attachment angle and method
JP2020027892A (ja) * 2018-08-13 2020-02-20 住友電工デバイス・イノベーション株式会社 半導体装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007500441A (ja) * 2003-07-30 2007-01-11 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ ワイヤボンドボールグリッドアレイ用グランドアーチ
US20170263568A1 (en) * 2016-03-10 2017-09-14 Amkor Technology, Inc. Semiconductor device having conductive wire with increased attachment angle and method
US10141269B2 (en) * 2016-03-10 2018-11-27 Amkor Technology, Inc. Semiconductor device having conductive wire with increased attachment angle and method
JP6195031B1 (ja) * 2016-10-24 2017-09-13 三菱電機株式会社 高周波増幅器
WO2018078686A1 (ja) * 2016-10-24 2018-05-03 三菱電機株式会社 高周波増幅器
CN109863592A (zh) * 2016-10-24 2019-06-07 三菱电机株式会社 高频放大器
DE112016007370T5 (de) 2016-10-24 2019-07-04 Mitsubishi Electric Corporation Hochfrequenzverstärker
US10951174B2 (en) 2016-10-24 2021-03-16 Mitsubishi Electric Corporation High-frequency amplifier
CN109863592B (zh) * 2016-10-24 2022-12-20 三菱电机株式会社 高频放大器
JP2020027892A (ja) * 2018-08-13 2020-02-20 住友電工デバイス・イノベーション株式会社 半導体装置

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