JPH04160146A - Vaporization source device - Google Patents
Vaporization source deviceInfo
- Publication number
- JPH04160146A JPH04160146A JP28368890A JP28368890A JPH04160146A JP H04160146 A JPH04160146 A JP H04160146A JP 28368890 A JP28368890 A JP 28368890A JP 28368890 A JP28368890 A JP 28368890A JP H04160146 A JPH04160146 A JP H04160146A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- heat
- heater
- conductor
- source device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008016 vaporization Effects 0.000 title abstract 4
- 238000009834 vaporization Methods 0.000 title abstract 4
- 239000004020 conductor Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 238000001704 evaporation Methods 0.000 claims description 22
- 230000008020 evaporation Effects 0.000 claims description 21
- 239000002994 raw material Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910002804 graphite Inorganic materials 0.000 abstract description 2
- 239000010439 graphite Substances 0.000 abstract description 2
- 239000000155 melt Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、主として分子線エピタキシ装置に使用される
蒸発源装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an evaporation source device mainly used in a molecular beam epitaxy device.
（従来の技術）
従来、分子線エピタキシ装置にはクヌーセンセルと称す
る蒸発源装置が使用され、該蒸発源装置は、第１図に見
られるように、真空室ａ内の基板すに向けて開口するＰ
ＢＮ製のるつはＣを熱伝導量調節ジヨイントｄを介して
真空フランジｈに支持させ、該るつはＣの周囲に熱シー
ルド板ｉで囲まれたコイル状のヒータｅを設けて構成さ
れるを一般とする。該るっはＣには、温度制御用に熱電
対ｆが取付けられ、ヒータｅの直射熱と熱シールド板ｉ
からの反射熱により該るつはＣが加熱され、その加熱で
内部の蒸発原料ｇが蒸着に十分な蒸気圧になると、基板
すに向けて蒸発原料ｇがるつはＣから飛び出し、該基板
すに薄膜状に付着する。(Prior Art) Conventionally, an evaporation source device called a Knudsen cell has been used in a molecular beam epitaxy apparatus, and as shown in FIG. P to do
A BN bolt C is supported on a vacuum flange h via a heat conduction adjustment joint d, and a coil-shaped heater e surrounded by a heat shield plate i is provided around the crucible C. generally. A thermocouple f is attached to the circuit C for temperature control, and a heat shield plate i is connected to the direct heat of the heater e.
The heat reflected from the melt heats the crucible C, and when the heating causes the evaporation raw material g inside the crucible to reach a vapor pressure sufficient for vapor deposition, the evaporation raw material g jumps out from the crucible C toward the substrate. It adheres to the skin in a thin film.
（発明が解決しようとする課題）
上記した従来の蒸発源装置は、るっはＣのまわりにコイ
ル状のヒータｅを設置しているので、熱シールド板ｉか
らの反射が得られるものの、ヒータｅの熱が周囲に拡散
し勝ちであり、熱効率が悪くるつはＣに加熱むらが発生
して蒸発原料ｇを均一に加熱できない欠点があった。ま
た、るつはＣの周囲に間隔を存してヒータｅが設けられ
るので、蒸発源が全体として大きくなる不都合があった
。(Problems to be Solved by the Invention) The conventional evaporation source device described above has a coil-shaped heater e installed around the heat shield plate i, so although reflection from the heat shield plate i can be obtained, the heater The heat of e tends to diffuse to the surroundings, and the heat efficiency is poor, which causes uneven heating of c and has the disadvantage that the evaporation raw material g cannot be heated uniformly. Further, since the heater e is provided at a distance around the melt C, there is a problem that the evaporation source becomes large as a whole.
本発明は、上記の欠点等を解消し熱効率がよく小形化の
可能な蒸発源装置を提供することを目的とするものであ
る。SUMMARY OF THE INVENTION It is an object of the present invention to provide an evaporation source device that eliminates the above-mentioned drawbacks and has good thermal efficiency and can be downsized.
（課題を解決するための手段）
本発明では、蒸発原料を内部に収めたるっほを加熱して
該蒸発原料を蒸発させる装置に於いて、該るつぼを電気
不良導体で形成し、その外周面に発熱導電体を蒸着して
抵抗加熱ヒータを設けることにより、上記の目的を達成
するようにした。(Means for Solving the Problems) In the present invention, in an apparatus for heating a crucible containing an evaporation raw material to evaporate the evaporation raw material, the crucible is formed of an electrically poor conductor, and its outer peripheral surface The above object was achieved by providing a resistance heater by depositing a heat generating conductor on the.
（作 用）
抵抗加熱ヒータに通電してるつぼを加熱すると、その内
部に収めた蒸発原料が蒸発し、真空室内に用意した基板
に薄膜か形成される。該るつぼには、その外周面に蒸着
により抵抗加熱ヒータか形成されているので、該抵抗加
熱ヒータの発熱は伝導によりるつぼに伝わり、効率良く
しかもむらなく均一的にるっは内の蒸発原料を加熱でき
、また、るっほの周囲に熱源のための空間か不要になる
ので、蒸発源装置を小形化できる。更に、蒸着て該抵抗
加熱ヒータが形成されているので、取付部材か不要にな
り、放出ガスも少なくなる。(Function) When the resistance heater is energized to heat the crucible, the evaporation raw material stored inside the crucible evaporates and a thin film is formed on the substrate prepared in the vacuum chamber. Since a resistance heater is formed on the outer circumferential surface of the crucible by vapor deposition, the heat generated by the resistance heater is transmitted to the crucible by conduction, efficiently and evenly evaporating the evaporated raw material inside the crucible. It can be heated, and since there is no need for a space around the Ruho for a heat source, the evaporation source device can be made smaller. Furthermore, since the resistance heater is formed by vapor deposition, no mounting member is required and less gas is released.
（実施例）
本発明の実施例を図面第２図に基づき説明すると、同図
に於いて、符号（Ｊ）は第１図の場合と同様の基板か用
意された真空室を示し、該真空室（１）内には真空フラ
ンジ（２）に熱伝導量調節ジヨイント（３）により支持
されたるっは（４）か設けられる。該るつぼ（４）はそ
の開口を真空室（］、）内の基板に向けて設置され、該
るっぽ（４）の周囲は３重の熱シールド板（５）により
覆われる。（６）は該るつは（４）の外周面に取付けた
るつぼ＜４）の温度制御用の熱電対、（９）は蒸発原料
である。なお、熱伝導量調節ジヨイント（３）の内部に
は、るつは（４）の温度を低温に制御するために液体窒
素等の低温媒体が必要に応じて循環される。(Embodiment) An embodiment of the present invention will be explained based on FIG. 2 of the drawing. In the same figure, the symbol (J) indicates a vacuum chamber prepared with the same substrate as in FIG. In the chamber (1) there is provided a lever (4) supported by a heat conduction adjustment joint (3) on the vacuum flange (2). The crucible (4) is installed with its opening facing the substrate in the vacuum chamber (], ), and the periphery of the crucible (4) is covered with a triple heat shield plate (5). (6) is a thermocouple attached to the outer peripheral surface of crucible (4) for controlling the temperature of crucible <4), and (9) is an evaporation raw material. It should be noted that a low-temperature medium such as liquid nitrogen is circulated inside the heat conduction amount adjustment joint (3) as necessary to control the temperature of the joint (4) to a low temperature.
以上の構成は、前記した従来の蒸発源装置と特に変わり
かないか、本発明に於いてはるっは（４）を電気不良導
体たとえばＰＢＮで形成し、その外周面（７）に通電に
より発熱するグラファイト、タンタル合金等の抵抗発熱
材料を蒸着して抵抗加熱ヒータ（８）を設けるようにし
たもので、その詳細は第３図示の如くであり、るつは（
４）の外周面（７）に蛇行させて抵抗発熱材料を蒸着し
て作成される。The above configuration is not particularly different from the conventional evaporation source device described above.In the present invention, the cap (4) is formed of an electrically poor conductor such as PBN, and the outer peripheral surface (7) generates heat when energized. The resistance heating material (8) is provided by vapor-depositing a resistance heating material such as graphite or tantalum alloy.The details are as shown in the third figure.
4) by vapor-depositing a resistance heating material in a meandering manner on the outer peripheral surface (7).
図示実施例の作動を説明すると、真空室（１）内を真空
に排気したのち抵抗加熱ヒータ（８）へ通電し、まず、
るつは（４）内に収めた蒸発原料（９）を加熱脱ガスし
たのち該るつは（４）から蒸発原料（９）を蒸発させ、
該るつは（４）の開口方向に用意された基板に薄膜状に
その蒸発物か付着する。該抵抗加熱ヒータ（８）はるつ
は（４）の外周面（７）に蒸着されているので、該ヒー
タ（８）の片面から発生する熱はるつは（４）に伝導し
、もう一方の面からの放熱は熱シールド板（５）により
反射されてるつは（４）を加熱する。従って、該ヒータ
（８）の熱は真空室（１）内に拡散することが少なくな
り、熱効率良くるつぼ（４）を均一に加熱することがで
き、また、るつは（４）の周面にヒータ（８）か付着形
成されているので、ヒータ（８）の設置空間を小さくす
ることが可能になる。To explain the operation of the illustrated embodiment, the inside of the vacuum chamber (1) is evacuated and then the resistance heater (8) is energized.
After heating and degassing the evaporation raw material (9) contained in the ruwa (4), the evaporation raw material (9) is evaporated from the ruwa (4),
The evaporated material of the melt adheres in the form of a thin film to the substrate prepared in the direction of the opening (4). Since the resistance heater (8) is vapor-deposited on the outer peripheral surface (7) of the heater (4), the heat generated from one side of the heater (8) is conducted to the heater (4), and the heat is transferred to the other side. The heat radiation from one side is reflected by the heat shield plate (5) and heats the other side (4). Therefore, the heat of the heater (8) is less likely to diffuse into the vacuum chamber (1), and the crucible (4) can be heated uniformly with high thermal efficiency. Since the heater (8) is attached and formed on the heater (8), it is possible to reduce the installation space for the heater (8).
（発明の効果）
以上のように本発明によれば、るっほを電気不良導体で
形成し、その外周面に発熱導電体を蒸着することにより
抵抗加熱ヒータを設けたので、るつぼを熱効率良く均一
に加熱することが出来、蒸発源装置を小形に構成できる
等の効果かある。(Effects of the Invention) As described above, according to the present invention, a resistance heater is provided by forming the crucible with an electrically poor conductor and depositing a heat-generating conductor on its outer peripheral surface, so that the crucible can be heated efficiently. It has the advantage of being able to heat uniformly and making the evaporation source device more compact.
第１図は従来例の截断側面図、第２図は本発明の実施例
の截断側面図、第３図はるつぼ外周面の展開図である。
（］）・・・真空室 （４）・るっは（７）・
・・外周面 （８）・・・抵抗加熱し−タフ９
）・・・蒸発原料
特 許 出 願 人 日本真空技術株式会社代
理 人 北 村 欣 −
外３名FIG. 1 is a cutaway side view of a conventional example, FIG. 2 is a cutaway side view of an embodiment of the present invention, and FIG. 3 is a developed view of the outer peripheral surface of the crucible. (])...Vacuum chamber (4)・Ruha (7)・
...Outer surface (8)...Resistance heating - Tough 9
)...Evaporation raw material patent applicant: Japan Vacuum Technology Co., Ltd.
Professor Kin Kitamura −
3 other people
Claims (1)
を蒸発させる装置に於いて、該るつぼを電気不良導体で
形成し、その外周面に発熱導電体を蒸着することにより
抵抗加熱ヒータを設けたことを特徴とする蒸発源装置。In an apparatus for heating a crucible containing an evaporation raw material to evaporate the evaporation raw material, the crucible is formed of an electrically poor conductor, and a resistance heater is provided by depositing a heat-generating conductor on the outer peripheral surface of the crucible. An evaporation source device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28368890A JPH04160146A (en) | 1990-10-22 | 1990-10-22 | Vaporization source device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28368890A JPH04160146A (en) | 1990-10-22 | 1990-10-22 | Vaporization source device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04160146A true JPH04160146A (en) | 1992-06-03 |
Family
ID=17668789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28368890A Pending JPH04160146A (en) | 1990-10-22 | 1990-10-22 | Vaporization source device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04160146A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108624849A (en) * | 2018-07-19 | 2018-10-09 | 北京泰科诺科技有限公司 | A kind of thermal resistance evaporation device |
-
1990
- 1990-10-22 JP JP28368890A patent/JPH04160146A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108624849A (en) * | 2018-07-19 | 2018-10-09 | 北京泰科诺科技有限公司 | A kind of thermal resistance evaporation device |
| CN108624849B (en) * | 2018-07-19 | 2023-09-22 | 北京泰科诺科技有限公司 | Resistance evaporator |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1130129B1 (en) | Source for thermal physical vapor deposition of organic electroluminescent layers | |
| US8591223B2 (en) | Evaporator for organic materials and method for evaporating organic materials | |
| US4543467A (en) | Effusion type evaporator cell for vacuum evaporators | |
| US5041719A (en) | Two-zone electrical furnace for molecular beam epitaxial apparatus | |
| US2772318A (en) | Apparatus for vaporization of metals and metalloids | |
| US5239612A (en) | Method for resistance heating of metal using a pyrolytic boron nitride coated graphite boat | |
| TW201033400A (en) | Vacuum deposition sources having heated effusion orifices | |
| US4791273A (en) | Vaporizer system for ion source | |
| JPH04160146A (en) | Vaporization source device | |
| JPH09272703A (en) | Vaporizing source for organic compound and vapor-deposition polymerization apparatus using the same | |
| JPH01225769A (en) | Vapor deposition source for thin vapor-deposited organic compound film | |
| US6752911B2 (en) | Device and method for coating objects at a high temperature | |
| KR101868463B1 (en) | High temperature evaporation having outer heating container | |
| JPH0254426B2 (en) | ||
| JPS6043913B2 (en) | Crucible for evaporation source | |
| GB1103211A (en) | Improvements in and relating to vapour deposition and evaporation sources | |
| JPS59113174A (en) | Method and device for forming thin film | |
| JP3451694B2 (en) | Vacuum deposition equipment | |
| JPS6113551Y2 (en) | ||
| JPS63241921A (en) | Substrate heating device for molecular beam epitaxy system | |
| JPH1088322A (en) | Evaporation source for lithium | |
| JPS60152670A (en) | Vapor source using high frequency induction heating | |
| JPS5943872A (en) | Vessel for storing material to be evaporated | |
| JPH01246747A (en) | Ion source | |
| JPH0543090Y2 (en) |