JPH04158513A - Vertical heat treatment quipment - Google Patents
Vertical heat treatment quipmentInfo
- Publication number
- JPH04158513A JPH04158513A JP28380690A JP28380690A JPH04158513A JP H04158513 A JPH04158513 A JP H04158513A JP 28380690 A JP28380690 A JP 28380690A JP 28380690 A JP28380690 A JP 28380690A JP H04158513 A JPH04158513 A JP H04158513A
- Authority
- JP
- Japan
- Prior art keywords
- frame
- heater
- heat treatment
- reaction tube
- vertical heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims description 26
- 238000006243 chemical reaction Methods 0.000 claims description 37
- 235000012431 wafers Nutrition 0.000 claims description 11
- 238000012423 maintenance Methods 0.000 abstract description 3
- 239000012212 insulator Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 description 12
- 239000012495 reaction gas Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000002516 radical scavenger Substances 0.000 description 10
- 238000007789 sealing Methods 0.000 description 4
- 230000002542 deteriorative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 101100389815 Caenorhabditis elegans eva-1 gene Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は半導体製造の縦型熱処理装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a vertical heat treatment apparatus for semiconductor manufacturing.
［従来の技術］
従来、ウェハの成膜に用いられる縦型熱処理装置は、第
３図に示すように下端にウエノ１１を収納した石英ボー
ト２を搬入出する搬入出口３を有する反応管４がベース
プレート５にマニホールド６を介して固定されて設けら
れる。反応管４の上部には反応ガス供給系から供給され
る反応ガス導入口（図示せず）及び反応管４の下部には
反応後の生成ガスや余剰の反応ガスを排出する反応ガス
排出口８が設けられ図示しない排気装置に接続されてい
る。反応管４の周囲には断面均熱を保って反応管４を加
熱できるようにいくつかのゾーンに分割されたヒータ９
がベースプレート５に支持されて配設されると共に、下
方には高温による加熱を防止するための下部スカベンジ
ャ１０及び搬入出口３から石英ボート２を搬入出するた
めのボート搬送装置１１が設けられる。[Prior Art] Conventionally, a vertical heat treatment apparatus used for film formation on wafers has a reaction tube 4 having a loading/unloading port 3 at the lower end for loading/unloading a quartz boat 2 containing Ueno 11, as shown in FIG. It is fixed to the base plate 5 via a manifold 6. At the top of the reaction tube 4 there is a reaction gas inlet (not shown) supplied from the reaction gas supply system, and at the bottom of the reaction tube 4 there is a reaction gas outlet 8 for discharging the product gas and surplus reaction gas after the reaction. is provided and connected to an exhaust system (not shown). Around the reaction tube 4, there is a heater 9 divided into several zones so that the reaction tube 4 can be heated while maintaining cross-sectional uniformity.
is supported by the base plate 5, and a lower scavenger 10 for preventing heating due to high temperatures and a boat conveyance device 11 for loading and unloading the quartz boat 2 from the loading/unloading port 3 are provided below.
ボート搬送装置１１はモータ１２と、このモータ１２に
連結されたボールスクリュー１３と、このボールスクリ
ュー１３の回転により昇降する昇降アーム１４とから成
る。昇降アーム１４の先端には石英ボート２を載置する
載置台１５がモータ１６に接続されて設けられ、反応時
に載置台１５が回転してウェハ１の均熱加熱が行えるよ
うになっている。この載置台１５は保温筒１７に包囲さ
れ、さらに、保温筒１７には石英ボート２が上昇され、
反応管４内に配置された時、反応管４のボ−ト搬入出口
３を密閉する蓋１８及び下部スカベンジャ１０を密閉す
る蓋１９が備えられる。下部スカベンジャ１０の側面に
は反応管４から排出される反応ガスの排気口２０や、そ
の他Ｏリングを介して反応管４の蓋１８が閉じられた時
、接触する高温のマニホールド６の熱によりＯリングが
劣化して気密シールが劣化しないためにマニホールド６
を冷却する冷却水や、ヒータ９や反応管４の温度センサ
の熱電対等の電気系統等が接続される。The boat transport device 11 includes a motor 12, a ball screw 13 connected to the motor 12, and a lifting arm 14 that moves up and down as the ball screw 13 rotates. A mounting table 15 on which the quartz boat 2 is placed is connected to a motor 16 and is provided at the tip of the lifting arm 14, and the mounting table 15 rotates during a reaction so that uniform heating of the wafer 1 can be performed. This mounting table 15 is surrounded by a heat insulating cylinder 17, and furthermore, a quartz boat 2 is lifted into the heat insulating cylinder 17,
A lid 18 for sealing the boat loading/unloading port 3 of the reaction tube 4 and a lid 19 for sealing the lower scavenger 10 when placed in the reaction tube 4 are provided. On the side of the lower scavenger 10, there is an exhaust port 20 for the reaction gas discharged from the reaction tube 4, and when the lid 18 of the reaction tube 4 is closed through an O-ring, O Manifold 6 to prevent the ring from deteriorating and the airtight seal from deteriorating.
Cooling water for cooling the reactor 9 and electrical systems such as a thermocouple for the temperature sensor of the heater 9 and the reaction tube 4 are connected.
このような機構の縦型熱処理装置はヒータ９を包囲する
断熱材２１の外側にヒータカバー７が設けられ、このヒ
ータカバー７の外側所定の間隔を介してフレーム２２で
被われてクリーンルーム内に設置される。フレーム２２
の下部には反応管４を冷却するためのエア送入口２３が
設けられる。In a vertical heat treatment apparatus having such a mechanism, a heater cover 7 is provided on the outside of a heat insulating material 21 surrounding the heater 9, and the heater cover 7 is covered with a frame 22 at a predetermined distance from the outside and installed in a clean room. be done. frame 22
An air inlet 23 for cooling the reaction tube 4 is provided at the bottom of the tube.
フレーム２２の天井部分には、ヒータ９の上部を包囲し
て上部スカベンジャ２５が工場排気系に連結されたダク
ト２６に接続されて、フレーム２２のエア送入口２３か
ら取り入れられたエアによりヒータ９から発生する熱を
除去するよう設けられる。また、上部スカベンジャ２５
部のフレーム２２はメンテナンス等のための開口部２７
が設けられ、開口部２７には開閉可能な蓋２８が設けら
れている。At the ceiling part of the frame 22, an upper scavenger 25 is connected to a duct 26 connected to the factory exhaust system, surrounding the upper part of the heater 9. Provided to remove the heat generated. In addition, the upper scavenger 25
The frame 22 has an opening 27 for maintenance etc.
The opening 27 is provided with a lid 28 that can be opened and closed.
［発明が解決しようとする課題］
しかしながら、ウェハ１の大口径化、多数枚処理のため
縦型熱処理装置の大型化が進み、設置されるクリーンル
ームの高さとも相まってヒータ９とフレーム２２の天井
部分の間隙は４０ｍｍ等と非常に狭くなっている。その
ため、ヒータ９の加熱時においても工場排気系により上
部スカベンジャ２５から排気を行っていた。しかし、フ
レーム２２の天井部分や蓋２８は１００〜１２０℃と高
温になり、非常に危険であった。[Problems to be Solved by the Invention] However, as the diameter of the wafer 1 increases and the size of the vertical heat treatment apparatus increases due to the processing of a large number of wafers, the ceiling of the heater 9 and the frame 22 increases due to the height of the clean room in which it is installed. The gap is extremely narrow, such as 40 mm. Therefore, even when the heater 9 is heating, the exhaust from the upper scavenger 25 is performed by the factory exhaust system. However, the ceiling portion of the frame 22 and the lid 28 reach a high temperature of 100 to 120° C., which is extremely dangerous.
本発明は上記の欠点を解消するためになされたものであ
って、上部のフレームが高温にならず危険排除した縦型
熱処理装置を提供することを目的とする。The present invention has been made in order to eliminate the above-mentioned drawbacks, and an object of the present invention is to provide a vertical heat treatment apparatus in which the upper frame does not become hot, thereby eliminating danger.
［課題を解決するための手段］
上記の目的を達成するため、本発明の縦型熱処理装置は
、下端にウェハを収納したボートの搬入出口を有する反
応管と、前記反応管の周囲に配設されたヒータと、前記
ヒータを包囲するフレームとを備えた縦型熱処理装置に
おいて、前記ヒータの上端と前記フレームとの間に排気
通路を形成する分流板を設けたものである。[Means for Solving the Problems] In order to achieve the above object, the vertical heat treatment apparatus of the present invention includes a reaction tube having a loading/unloading port for a boat storing wafers at its lower end, and a structure arranged around the reaction tube. In the vertical heat treatment apparatus, the vertical heat treatment apparatus includes a heated heater and a frame that surrounds the heater, and a flow dividing plate that forms an exhaust passage is provided between the upper end of the heater and the frame.
［作用］
縦型熱処理装置の高温になるフレームの天井部分にフレ
ームとヒータ間に分流板を設け、分流板の一端を排気装
置に接続されたダクトに着装させる。これにより分流板
自体で熱を遮断すると共に、断熱板の上下に排気通路を
形成するため、フレームの天井部分及び蓋が高温になる
のを防止することができる。そのため、縦型熱処理装置
であっても安全性の高いものが得られる。[Function] A flow divider plate is provided between the frame and the heater on the ceiling of the frame that becomes hot in the vertical heat treatment apparatus, and one end of the flow divider plate is attached to a duct connected to the exhaust device. As a result, the flow divider plate itself blocks heat, and since exhaust passages are formed above and below the heat insulating plate, it is possible to prevent the ceiling portion of the frame and the lid from becoming hot. Therefore, even if it is a vertical heat treatment apparatus, a highly safe one can be obtained.
［実施例］
本発明の縦型熱処理装置を適用した一実施例を図面を参
照して説明する。[Example] An example to which the vertical heat treatment apparatus of the present invention is applied will be described with reference to the drawings.
第１図に示す縦型熱処理装置は、第３図と同一部分には
同一符号を付して説明する。下端につエバ１を収納した
石英ボート２を搬入比する搬入出口３を有する反応管４
がベースプレート５にマニホールド６を介して固定され
て設けられる。反応管４の上部には反応ガス供給系から
供給される反応ガス導入口（図示せず）及び反応管４の
下部には反応後の生成ガスや余剰の反応ガスを排出する
反応ガス排出口８が設けられ図示しない排気装置に接続
されている。反応管４の周囲には断面均熱を保って反応
管４を加熱できるようにいくつかのゾーンに分割された
ヒータ９がベースプレート５に支持されて配設されると
共に、下方には高温による加熱を防止するための下部ス
カベンジャ１０及び搬入出口３から石英ボート２を搬入
比するためのボート搬送装置１１が設けられる。The vertical heat treatment apparatus shown in FIG. 1 will be described with the same reference numerals assigned to the same parts as in FIG. 3. A reaction tube 4 having a loading/unloading port 3 at its lower end for loading a quartz boat 2 containing Eva 1.
is fixed to the base plate 5 via a manifold 6. At the top of the reaction tube 4 there is a reaction gas inlet (not shown) supplied from the reaction gas supply system, and at the bottom of the reaction tube 4 there is a reaction gas outlet 8 for discharging the product gas and surplus reaction gas after the reaction. is provided and connected to an exhaust system (not shown). Around the reaction tube 4, a heater 9 divided into several zones is supported by the base plate 5 so as to heat the reaction tube 4 while maintaining cross-sectional uniformity. A lower scavenger 10 and a boat transport device 11 are provided to transport the quartz boat 2 from the transport port 3.
ボート搬送装置ｆｌｌはモータ１２と、このモータ１２
に連結されたボールスクリュー１３と、このボールスク
リュー１３の回転により昇降する昇降アーム１４とから
成る。昇降アーム１４先端には石英ボート２を載置する
載置台１５がモータ１６に接続されて設けられ、反応中
載置台１５が回転してウェハ１の均熱加熱が行えるよう
になっている。この載置台１５は保温筒１７に包囲され
、さらに、保温筒１７には石英ボート２が上昇され、反
応管４内に配置された時、反応管４のボート搬入出口３
を密閉する蓋１８及び下部スカベンジャ１０を密閉する
蓋１９が備えられる。反応ガスの排気口２０やその他Ｏ
リングを介して反応管４の蓋１８が閉じられた時、接触
する高温のマニホールド６の熱によりシールドが劣化し
ないためのマニホールド６の冷却水や反応管４の温度セ
ンサの熱電対等の電気系統等が接続される。The boat transport device fll includes a motor 12 and a motor 12.
It consists of a ball screw 13 connected to the holder, and an elevating arm 14 that moves up and down as the ball screw 13 rotates. A mounting table 15 on which the quartz boat 2 is placed is connected to a motor 16 and provided at the tip of the lifting arm 14, and the mounting table 15 rotates during the reaction to uniformly heat the wafer 1. This mounting table 15 is surrounded by a heat insulating cylinder 17, and when the quartz boat 2 is lifted into the heat insulating cylinder 17 and placed inside the reaction tube 4, the boat loading/unloading port 3 of the reaction tube 4 is placed inside the reaction tube 4.
A lid 18 for sealing the lower scavenger 10 and a lid 19 for sealing the lower scavenger 10 are provided. Reaction gas exhaust port 20 and other O
When the lid 18 of the reaction tube 4 is closed via the ring, the electrical system such as the cooling water of the manifold 6 and the thermocouple of the temperature sensor of the reaction tube 4 to prevent the shield from deteriorating due to the heat of the high temperature manifold 6 in contact with it. is connected.
このような機構の縦型熱処理装置はヒータ９を包囲する
断熱材２１の外側にヒータカバー７が設けられ、ヒータ
カバー７の外側所定間隔を介してフレーム２２で被われ
てクリーンルーム内に設置される。フレーム２２の下部
にはエア送入口２３が設けられる。フレーム２２の天井
部分にはフレーム２２のメンテナンス等のための開口部
２７と開口部２７の蓋２８が設けられる。ヒータ９とフ
レーム２２の中間には分流板２９が備えられ、分流板２
９は第２図に示すように一端ａを工場排気系に接続され
たダクト２６のスリット３０を２分するように着装され
る。分流板２９は厚さ２ｍｍのＳＵＳ板で形成され、ｂ
及びＣ方向はフレーム２２に接触するよう設けられるた
め、分流板２９とフレーム２２の間隙３１（第１図）及
び分流板２９とヒータ９の間隙３２の両方向に排気通路
を形成できる。尚、このフレーム２２の蓋２８及び分流
板２９に排気通路を狭くしない程度の厚さの断熱材３３
を取着させて断熱効果を高めるようにしてもよい。In a vertical heat treatment apparatus having such a mechanism, a heater cover 7 is provided on the outside of a heat insulating material 21 surrounding the heater 9, and the heater cover 7 is covered with a frame 22 at a predetermined distance from the outside and installed in a clean room. . An air inlet 23 is provided at the bottom of the frame 22. The ceiling portion of the frame 22 is provided with an opening 27 for maintenance of the frame 22, and a lid 28 for the opening 27. A flow divider plate 29 is provided between the heater 9 and the frame 22, and the flow divider plate 2
9 is attached so as to bisect the slit 30 of the duct 26 whose one end a is connected to the factory exhaust system, as shown in FIG. The flow dividing plate 29 is formed of a 2 mm thick SUS plate, and b
Since the directions C and C are provided so as to contact the frame 22, exhaust passages can be formed in both directions of the gap 31 (FIG. 1) between the flow divider plate 29 and the frame 22 and the gap 32 between the flow divider plate 29 and the heater 9. Note that a heat insulating material 33 is provided on the lid 28 of the frame 22 and the flow divider plate 29 with a thickness that does not narrow the exhaust passage.
It may also be installed to increase the heat insulation effect.
このような構成の縦型熱処理装置により成膜処理を行う
場合は、ウェハ１を収納した石英ボート２を保温筒１７
上の載置台１５に載置する。ボート搬送装置１１のモー
タ１２を作動させ昇降アーム１４を上昇させる。石英ボ
ート２が反応管４の搬入出口３から反応管４内に挿入さ
れ最上位まで上昇されると反応管４及び下部スカベンジ
ャ１０は蓋１８及び１９で密閉される。その後、図示し
ない反応ガス導入口から反応ガスを反応管４内に供給す
る。この時反応管４内はヒータ９か通電されて、所定温
度に加熱される。この時モータ１６を駆動させ石英ボー
ト２の載置台１５を回転させ、ウェハ１を断面均一に加
熱されるようにしてウェハ１上に均一な膜厚の薄膜を形
成できるようにする。同時にダクト２６を工場排気系に
接続してヒータの上方の排気通路（間隙３１及び３２）
から排気を行う。このようにすることでヒータカバー７
とフレーム２２の天井部分の間隙が４０ｍｍであっても
ヒータ９の加熱中フレーム２２の蓋２５は５０℃にしか
加熱されない。反応管４内で熱処理が所定の時間行われ
た後、ボート搬送装置１１を作動させ昇降アーム１４を
下降させて石英ボート２を反応管４から搬出する。When performing a film forming process using a vertical heat treatment apparatus having such a configuration, the quartz boat 2 containing the wafers 1 is placed in the heat insulating tube 17.
Place it on the upper mounting table 15. The motor 12 of the boat transport device 11 is operated to raise the lifting arm 14. When the quartz boat 2 is inserted into the reaction tube 4 from the loading/unloading port 3 of the reaction tube 4 and raised to the top, the reaction tube 4 and the lower scavenger 10 are sealed with lids 18 and 19. Thereafter, a reaction gas is supplied into the reaction tube 4 from a reaction gas inlet (not shown). At this time, the heater 9 is energized to heat the inside of the reaction tube 4 to a predetermined temperature. At this time, the motor 16 is driven to rotate the mounting table 15 of the quartz boat 2, so that the wafer 1 is heated uniformly in cross section, so that a thin film of uniform thickness can be formed on the wafer 1. At the same time, the duct 26 is connected to the factory exhaust system to provide an exhaust passage above the heater (gaps 31 and 32).
Exhaust air from the By doing this, the heater cover 7
Even if the gap between the frame 22 and the ceiling portion is 40 mm, the lid 25 of the frame 22 is only heated to 50° C. during heating by the heater 9. After the heat treatment is performed in the reaction tube 4 for a predetermined period of time, the boat transport device 11 is activated to lower the lifting arm 14 to transport the quartz boat 2 out of the reaction tube 4.
尚、本発明は上記の実施例に限定されるものではなく、
縦型熱処理装置であれば酸化、拡散装置、ＣＶＤ装置等
何れのものにも適用することができる。Note that the present invention is not limited to the above embodiments,
The present invention can be applied to any vertical heat treatment apparatus such as an oxidation, diffusion, or CVD apparatus.
［発明の効果コ
以上の説明からも明らかなように、本発明の縦型熱処理
装置によれば、装置のフレームとヒータ間に分流板を設
け、分流板の上下に排気通路を設けたため、装置の上面
が高温に加熱されず危険を排除した安全性の高い縦型熱
処理装置が得られる。[Effects of the Invention] As is clear from the above description, according to the vertical heat treatment apparatus of the present invention, a flow divider plate is provided between the frame of the apparatus and the heater, and exhaust passages are provided above and below the flow divider plate. A highly safe vertical heat treatment device is obtained in which the upper surface of the device is not heated to high temperatures and danger is eliminated.
第１図は本発明の縦型熱処理装置の一実施例を示す図、
第２図は第１図に示す一実施例の要部を示す図、第３図
は従来例を示す図である。
１・・・・・・ウェハ
２・・・・・・ボート
３・・・・・・ボートの搬入出口
４・・・・・・反応管
９・・・・・・ヒータ
２２・・・・・・フレーム
２９・・・・・・分流板
３１．３２・・・・・・間隙（排気通路）代理人 弁理
士 守 谷 −雄
第１図
第３図FIG. 1 is a diagram showing an embodiment of the vertical heat treatment apparatus of the present invention,
FIG. 2 is a diagram showing a main part of the embodiment shown in FIG. 1, and FIG. 3 is a diagram showing a conventional example. 1...Wafer 2...Boat 3...Boat loading/unloading port 4...Reaction tube 9...Heater 22...・Frame 29...Broadcast plate 31.32...Gap (exhaust passage) Agent Patent attorney Moritani -O Figure 1 Figure 3
Claims (1)
管と、前記反応管の周囲に配設されたヒータと、前記ヒ
ータを包囲するフレームとを備えた縦型熱処理装置にお
いて、前記ヒータの上端と前記フレームとの間に排気通
路を形成する分流板を設けたことを特徴とする縦型熱処
理装置。In a vertical heat treatment apparatus comprising a reaction tube having a loading/unloading port for a boat storing wafers at a lower end, a heater disposed around the reaction tube, and a frame surrounding the heater, an upper end of the heater and a frame surrounding the heater are provided. A vertical heat treatment apparatus characterized in that a flow dividing plate is provided to form an exhaust passage between the frame and the frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2283806A JP2974032B2 (en) | 1990-10-22 | 1990-10-22 | Vertical heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2283806A JP2974032B2 (en) | 1990-10-22 | 1990-10-22 | Vertical heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04158513A true JPH04158513A (en) | 1992-06-01 |
| JP2974032B2 JP2974032B2 (en) | 1999-11-08 |
Family
ID=17670389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2283806A Expired - Lifetime JP2974032B2 (en) | 1990-10-22 | 1990-10-22 | Vertical heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2974032B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001003167A1 (en) * | 1999-07-02 | 2001-01-11 | Tokyo Electron Limited | Semiconductor manufacture equipment, and method and apparatus for semiconductor manufacture |
-
1990
- 1990-10-22 JP JP2283806A patent/JP2974032B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001003167A1 (en) * | 1999-07-02 | 2001-01-11 | Tokyo Electron Limited | Semiconductor manufacture equipment, and method and apparatus for semiconductor manufacture |
| US6547660B1 (en) | 1999-07-02 | 2003-04-15 | Tokyo Electron Limited | Semiconductor manufacturing facility, semiconductor manufacturing apparatus and semiconductor manufacturing method |
| JP2009076941A (en) * | 1999-07-02 | 2009-04-09 | Tokyo Electron Ltd | Open air suction/exhaust equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2974032B2 (en) | 1999-11-08 |
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