JPH0415748B2 - - Google Patents
Info
- Publication number
- JPH0415748B2 JPH0415748B2 JP26880284A JP26880284A JPH0415748B2 JP H0415748 B2 JPH0415748 B2 JP H0415748B2 JP 26880284 A JP26880284 A JP 26880284A JP 26880284 A JP26880284 A JP 26880284A JP H0415748 B2 JPH0415748 B2 JP H0415748B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- conductive
- ink
- substrate
- soluble
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 38
- 239000010409 thin film Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 17
- 239000010408 film Substances 0.000 claims description 11
- 238000007740 vapor deposition Methods 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229920003174 cellulose-based polymer Polymers 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001059 synthetic polymer Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M3/00—Printing processes to produce particular kinds of printed work, e.g. patterns
- B41M3/006—Patterns of chemical products used for a specific purpose, e.g. pesticides, perfumes, adhesive patterns; use of microencapsulated material; Printing on smoking articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M7/00—After-treatment of prints, e.g. heating, irradiating, setting of the ink, protection of the printed stock
- B41M7/0027—After-treatment of prints, e.g. heating, irradiating, setting of the ink, protection of the printed stock using protective coatings or layers by lamination or by fusion of the coatings or layers
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Pest Control & Pesticides (AREA)
- Duplication Or Marking (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、導電性薄膜のパターニング方法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for patterning a conductive thin film.
従来基板上に導電性薄膜を形成した材料として
はガラス板や、フイルム上に金やアルミニウムな
どの金属薄膜を設けたもの及び酸化スズ又は酸化
インジウム等の金属酸化物薄膜を設けたものが知
られている。これらの材料はその構成から表面導
電性を有する。さらに金属薄膜や金属酸化物の薄
膜を蒸着したようなものには、透明性を有する材
料も含まれており、ネサガラスや透明導電性フイ
ルムとして知られている。
Conventional materials with conductive thin films formed on substrates include glass plates, films with metal thin films such as gold or aluminum, and metal oxide thin films such as tin oxide or indium oxide. ing. These materials have surface conductivity due to their composition. Furthermore, transparent materials such as metal thin films or metal oxide thin films deposited by vapor deposition are also included, and are known as Nesa glass and transparent conductive films.
このような表面導電性を有する材料は、その導
電性を利用した用途、例えばフレキシブルサーキ
ツト、帯電防止、電磁遮蔽、タツチパネルや面状
発熱体に利用され、特に透明導電性を有する材料
は、その他透明導電性を必要とする用途、例えば
液晶デイスプレイ用電極、電場発光体用電極、光
導電性感光体用電極性のエレクトロニクスの分野
に広く利用されている。 Materials with such surface conductivity are used for applications that take advantage of their conductivity, such as flexible circuits, antistatic, electromagnetic shielding, touch panels, and sheet heating elements. In particular, materials with transparent conductivity are used in other applications. It is widely used in the field of electronics for applications requiring transparent conductivity, such as electrodes for liquid crystal displays, electrodes for electroluminescent materials, and electrodes for photoconductive photoreceptors.
これらの用途には表面導電性を有する材料がそ
のまま後加工なしで利用されるケースは少く、用
途によつて必要なパターンに導電部分をエツチン
グしたり、導電性基板を、例えばCRTの前面に
密着するように使用する場合が多い。 For these applications, there are few cases in which materials with surface conductivity are used as is without any post-processing. Depending on the application, the conductive parts may be etched into the required pattern, or a conductive substrate may be tightly attached to the front surface of a CRT, for example. It is often used like this.
従来、曲面基板上に形成された導電性薄膜をエ
ツチングする方法としてはフオトレジスト法やス
クリーン印刷法によつて所望のパターンを得るた
め、平面基板上の導電性薄膜表面にフオトレジス
ト法やスクリーン印刷法によつてマスクを形成
し、しかる後エツチングする。その後、基板を曲
面化する方法がとられる。しかしこれらの方法に
は次の様な問題点がある。 Conventionally, the method of etching a conductive thin film formed on a curved substrate is a photoresist method or screen printing method to obtain a desired pattern. A mask is formed by a method and then etched. After that, a method is used to curve the substrate. However, these methods have the following problems.
(1) 基板を曲面化する場合、通常加熱成形法で曲
面化される。この工程中に基板の表面のパター
ン化した導電性薄膜部分が加熱又は物理的な外
力により損傷又は断線する場合がある。特にイ
ンジユーム錫酸化物等の導電性金属酸化物薄膜
においては、伸びが少く曲面化の際の変形に耐
えず断線する。(1) When a substrate is curved, it is usually curved using a heat forming method. During this process, the patterned conductive thin film portion on the surface of the substrate may be damaged or disconnected due to heating or physical external force. In particular, conductive metal oxide thin films such as indium tin oxide have little elongation and cannot withstand deformation when curved, resulting in wire breakage.
(2) フオトレジスト法シルクスクリーン印刷法等
のエツチング法を使用した場合工程も長く、複
雑な工程を経て、エツチングコストも高い。(2) When an etching method such as a photoresist method or silk screen printing method is used, the process is long and complicated, and the etching cost is high.
又、フオトレジスト法、シルクスクリーン印
刷法を利用して、フイルムを曲面成型した後、
エツチング加工を行う方法もあるが、曲面上に
薄膜パターンが形成されるが、この場合、ベー
キング、乾燥工程中の基板の加熱が曲面成型さ
れた基板の曲率が変化して曲率が一定した薄膜
パターンが形成されない。 In addition, after forming the film into a curved surface using the photoresist method or silk screen printing method,
There is also a method of etching, in which a thin film pattern is formed on a curved surface, but in this case, the heating of the substrate during the baking and drying process changes the curvature of the curved substrate, resulting in a thin film pattern with a constant curvature. is not formed.
〔発明の目的〕〔発明の構成〕
本発明者らはこのような従来のフオトレジスト
法やスクリーン印刷法のような複雑な導電性薄膜
のエツチング方法を改良し、しかも曲面基板上に
簡単にエツチングコストの低減を達成するパター
ニング方法を鋭意検討した結果、水溶性インキ又
は、アルカリ可溶性インキを曲面成形前の平らな
基板の蒸着不要部分に塗工し、その後基板を曲面
化成型した後、導電材料を薄膜蒸着する。その後
水、又はアルカリ液に浸漬して摩擦してインキを
剥離してパターンを形成させる方法を見いだし本
発明を完成させた。[Objective of the Invention] [Structure of the Invention] The present inventors have improved the conventional method of etching a complicated conductive thin film such as the photoresist method or the screen printing method, and have developed a method that can be easily etched onto a curved substrate. As a result of intensive study on patterning methods that achieve cost reduction, we applied water-soluble ink or alkali-soluble ink to the parts of the flat substrate that do not require vapor deposition before forming the curved surface, and after forming the substrate into the curved surface, conductive material was applied. Deposit a thin film. After that, they discovered a method of forming a pattern by immersing it in water or alkaline liquid and rubbing it to peel off the ink, thereby completing the present invention.
本発明においては、通常のエツチング方法によ
るパターニング法と比較して、エツチングと剥離
工程が本方式においては同時に行なわれるので工
程が一つ簡略されたと考えられる。以下本発明を
詳細に説明する。 In the present invention, compared to a patterning method using a normal etching method, it is considered that one step is simplified because the etching and peeling steps are performed simultaneously in this method. The present invention will be explained in detail below.
本発明において使用する基板としてはプラスチ
ツクスフイルム、シートがレジスト層を損傷する
ことなく加熱成形で曲面化することが出来好適で
ある。 As the substrate used in the present invention, a plastic film or sheet is suitable because it can be heated and formed into a curved surface without damaging the resist layer.
従つて普通基板として使用されているポリエチ
レンテレフタレートなどのポリエステル樹脂、ポ
リカーボネート樹脂、ポリイミド樹脂、ポリアミ
ド樹脂、ポリエーテルサルフオン樹脂などが挙げ
られる。これらの中で2軸延伸ポリエチレンテレ
フタレートフイルムは寸法安定法、透明性、機械
的特性が優れており、最も適したフイルムであ
る。これらのプラスチツクフイルム上の蒸着不要
部分に水溶性インキ又はアルカリ可溶性インキを
先め塗工する。この次にこのフイルムを加熱成形
して曲面化した後導電性薄膜を形成する。しかる
のち水またはアルカリ水溶液に浸漬してレジスト
と共にレジスト上の導電面を剥離する。本発明の
導電性薄膜としては基板上に形成された厚み5000
Å以下の導電層が好ましい。5000Å以上だと本発
明のエツチング方法ではエツチングに時間がかか
りすぎる。そして導電性薄膜の材料としては、各
種金属、例えば、アルミニウム、亜鉛、鉄、ニツ
ケル、タンタル、銅、金、銀、コバルト等の金属
や、酸化スズや、インジウム錫酸化物などの金属
酸化物及びヨウ化銅や窒化チタン等のその他の導
電性材料が挙げられる。 Therefore, polyester resins such as polyethylene terephthalate, polycarbonate resins, polyimide resins, polyamide resins, polyether sulfon resins, etc., which are commonly used as substrates, may be used. Among these, biaxially stretched polyethylene terephthalate film is the most suitable film because it has excellent dimensional stability, transparency, and mechanical properties. Water-soluble ink or alkali-soluble ink is applied in advance to areas on these plastic films that do not require vapor deposition. Next, this film is heated and formed into a curved surface, and then a conductive thin film is formed. Thereafter, it is immersed in water or an alkaline aqueous solution to peel off the resist and the conductive surface on the resist. The conductive thin film of the present invention has a thickness of 5000 mm formed on a substrate.
A conductive layer with a thickness of Å or less is preferred. If the thickness is 5000 Å or more, the etching method of the present invention takes too much time. Materials for the conductive thin film include various metals such as aluminum, zinc, iron, nickel, tantalum, copper, gold, silver, and cobalt, metal oxides such as tin oxide, indium tin oxide, etc. Other conductive materials include copper iodide and titanium nitride.
基板上に導電性薄膜を形成する方法としては、
蒸着法、化学メツキ法、電気メツキ法や化学エー
テイング法及びそれらの組合せ方法のいずれも可
能であるが、形成された薄膜の均一性、製造の容
易性及び基板と導電性薄膜との接着性から蒸着法
が適している。蒸着法としては真空蒸着法、RF
及びDCスパツタリング法、反応性スパツタリン
グ法やイオンプレーテイング法等がある。形成す
る導電性、薄膜の材質及び導電性薄膜に要求され
る物性や製造コストの観点から適宜好ましい蒸着
法が選定される。 As a method of forming a conductive thin film on a substrate,
Any of the vapor deposition method, chemical plating method, electroplating method, chemical etching method, and combination methods thereof are possible; Vapor deposition method is suitable. Vapor deposition methods include vacuum evaporation method and RF
There are also DC sputtering methods, reactive sputtering methods, and ion plating methods. A preferred vapor deposition method is appropriately selected from the viewpoints of the conductivity to be formed, the material of the thin film, the physical properties required of the conductive thin film, and the manufacturing cost.
又導電性薄膜には必要に応じてアンカーコーテ
イング層あるいはトツプコーテイング層があつて
もよい。 The conductive thin film may also have an anchor coating layer or a top coating layer, if necessary.
次に水溶性インキ、又はアルカリ可溶性インキ
は数μ〜数10μ塗布し、しかもポリエチレンテレ
フタレートフイルムとの密着性がよく、曲面化成
形又は乾燥工程中においてもひび割れ、剥離しな
いものを選定する。 Next, a water-soluble ink or alkali-soluble ink is selected that is applied several microns to several tens of microns, has good adhesion to the polyethylene terephthalate film, and does not crack or peel off even during the curve forming or drying process.
例えば、エチルセルロース等セルロース系高分
子や、水溶性ナイロン等の合成高分子が考えられ
る。これらのレジストを筆書き法やシルクスクリ
ーン法で数μ〜数十μ印刷することにより基板上
に導電性薄膜を形成する。 For example, cellulose-based polymers such as ethyl cellulose and synthetic polymers such as water-soluble nylon can be considered. A conductive thin film is formed on the substrate by printing several micrometers to several tens of micrometers of these resists using a brush writing method or a silk screen method.
導電層を蒸着後は水溶性インキの場合は、水中
でインキを摩擦剥離する。アルカリ可溶形インキ
の場合、インキをアルカリ水溶液中に浸漬して摩
擦剥離すれば、導電性薄膜がインキと共に剥離し
又パターンが形成される。 After the conductive layer is deposited, in the case of water-soluble ink, the ink is rubbed off in water. In the case of an alkali-soluble ink, when the ink is immersed in an alkaline aqueous solution and peeled off by friction, the conductive thin film is peeled off together with the ink and a pattern is formed.
この様にして形成されたパターンは上下2枚導
電層を対向させた形で配置した、タツチパネル等
のスイツチング装置として主に利用される。これ
ら曲面化したタツチパネルは、CRTの曲率に合
せて製作し、CRTに表示された画面のポインテ
イングシステムとしては、位置づれの少ない入力
装置として利用されるが、インジユーム、錫酸化
物等の素材の薄膜を曲面化してパターン化された
タツチパネルは本発明により可能となつた。
The pattern formed in this way is mainly used as a switching device such as a touch panel, in which two conductive layers, upper and lower, are arranged facing each other. These curved touch panels are manufactured to match the curvature of the CRT and are used as a pointing system for the screen displayed on the CRT as an input device with less misalignment. The present invention has made it possible to create a patterned touch panel with a curved surface.
以下本発明を実施例によつて詳述する。 The present invention will be explained in detail below with reference to Examples.
実施例 1
エチルセルロースを水に25wt%溶解して、粘
度500〜3000PSにして、シルクスクリーン用のイ
ンクを製作した。そしてシルクスクリーンの版を
用いて前記のインクをフロン洗滌済の二軸延伸ポ
リエステルフイルム(175μm厚み)に蒸着不要
部分を5〜10μ印刷した。印刷後100℃30分乾燥
し、フイルムを加熱真空成形して曲率を600mmR
に成形した。その後、RFスパツタリング(日電
アネルバ製SPF−210H型使用)によつて厚み300
Åのインジユーム・錫酸化物を蒸着した。その
後、水に浸漬して布で軽くレジスト面を摩擦し
て、剥離してパターンを形成した。パターン間の
絶縁抵抗は500V印加して100MΩ以上を示して、
エツチングが完全に行なわれたことを示した。Example 1 Ethyl cellulose was dissolved in water at 25 wt% to have a viscosity of 500 to 3000 PS to produce an ink for silk screen. Then, using a silk screen plate, 5 to 10 μm of the above-mentioned ink was printed on a biaxially stretched polyester film (thickness: 175 μm) which had been washed with freon, in areas not required for vapor deposition. After printing, dry at 100℃ for 30 minutes, heat and vacuum form the film to a curvature of 600mmR.
It was molded into. After that, the thickness was reduced to 300 by RF sputtering (using Nichiden ANELVA SPF-210H type).
Indium/tin oxide of Å was deposited. Thereafter, the resist surface was immersed in water and lightly rubbed with a cloth to peel it off and form a pattern. The insulation resistance between the patterns was 100MΩ or more when 500V was applied.
This showed that the etching was completed.
実施例 2
市販のアルカリ可溶型レジスト(商品名:
NAZDAR品番226;吉川工業製)をシルクスク
リーン用のインクとして使用した。そしてシルク
スクリーンの版を用いて前記のインクをフレオン
洗滌後の市販のポリエステルフイルム(125μm
厚み)に第1図の1を印刷した。印刷後100℃,
30分乾燥後フイルムを加熱成形して曲率を850mm
Rに成形した。その後インジユーム錫酸化物を
RFスパツタリング(日電アネルバ製SPF−210H
型使用)によつて厚み300Åのインジユーム・
錫・酸化物を蒸着した。その後KOH5%溶液に浸
漬して布で軽くレジスト面を摩擦して剥離してパ
ターンを形成した。パターン間の絶縁抵抗は50V
印加して100MΩ以上でエツチングが完全に行な
われたことを示した。Example 2 Commercially available alkali-soluble resist (product name:
NAZDAR product number 226 (manufactured by Yoshikawa Industries) was used as an ink for silk screen. Then, using a silk screen plate, apply the above ink to a commercially available polyester film (125μm) after Freon washing.
1 in Fig. 1 was printed on the thickness). 100℃ after printing,
After drying for 30 minutes, heat mold the film to a curvature of 850mm.
It was molded into R. Then indium tin oxide
RF sputtering (Nichiden Anelva SPF-210H
300Å thick indium
Tin/oxide was deposited. Thereafter, the resist surface was immersed in a 5% KOH solution and rubbed lightly with a cloth to peel it off to form a pattern. Insulation resistance between patterns is 50V
It was shown that etching was completed when the applied voltage was 100 MΩ or more.
その後導電性ペイントを四周に曲面印刷して電
極を形成した。その結果透明タツチ入力装置とし
て良好な可焼性曲面フイルム電極が製作できた。 Thereafter, conductive paint was printed on a curved surface on all four sides to form electrodes. As a result, we were able to fabricate a burnable curved film electrode suitable for use as a transparent touch input device.
第1図はレジストの印刷パターンを示す平面略
示図である。
1はレジスト塗布部である。
FIG. 1 is a schematic plan view showing a printed pattern of a resist. 1 is a resist coating section.
Claims (1)
性又はアルカリ可溶性インキを印刷した後、曲面
化し導電性薄膜を蒸着したのち、水溶性又はアル
カリ可溶性インキを除去することを特徴とする曲
面蒸着フイルムのパターニング法。1. A curved surface characterized by printing a water-soluble or alkali-soluble ink on areas that do not require vapor deposition on a flat substrate in advance, then converting it into a curved surface, depositing a conductive thin film on it, and then removing the water-soluble or alkali-soluble ink. Patterning method for vapor deposited films.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26880284A JPS61146590A (en) | 1984-12-20 | 1984-12-20 | Patterning of vapor-deposited curved film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26880284A JPS61146590A (en) | 1984-12-20 | 1984-12-20 | Patterning of vapor-deposited curved film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61146590A JPS61146590A (en) | 1986-07-04 |
JPH0415748B2 true JPH0415748B2 (en) | 1992-03-18 |
Family
ID=17463466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26880284A Granted JPS61146590A (en) | 1984-12-20 | 1984-12-20 | Patterning of vapor-deposited curved film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61146590A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10254029A1 (en) * | 2002-11-20 | 2004-06-09 | Leonhard Kurz Gmbh & Co. Kg | Process for producing a partially metallized film element |
-
1984
- 1984-12-20 JP JP26880284A patent/JPS61146590A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61146590A (en) | 1986-07-04 |
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