JPH04152289A - Image type x-ray detector - Google Patents
Image type x-ray detectorInfo
- Publication number
- JPH04152289A JPH04152289A JP2277434A JP27743490A JPH04152289A JP H04152289 A JPH04152289 A JP H04152289A JP 2277434 A JP2277434 A JP 2277434A JP 27743490 A JP27743490 A JP 27743490A JP H04152289 A JPH04152289 A JP H04152289A
- Authority
- JP
- Japan
- Prior art keywords
- probe
- photo electron
- ray
- generated
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 2
- 230000001360 synchronised effect Effects 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001093 holography Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- -1 photocathode Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Measurement Of Radiation (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野）
この発明はＸｋｌＡ像を従来よりも高分解能で検出する
検出器で、医用放射線画像および工業用非破壊検査に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a detector for detecting XklA images with higher resolution than conventional ones, and relates to medical radiation images and industrial non-destructive testing.
この発明はＸｖＡの入射エネルギーにより発生する光電
子と導電性探針（例えば、細い金属の針）とのトンネル
現像を利用することにより、従来の発生した光電子を加
速、集束、結像し、蛍光面で電子線を可視光化する方法
に比べて、高い分解能を有する。This invention uses tunnel development between photoelectrons generated by incident energy of XvA and a conductive probe (e.g., a thin metal needle) to accelerate, focus, and image the photoelectrons generated conventionally, and This method has higher resolution than the method of converting electron beams into visible light.
この発明のイメージ型Ｘ線検出器の特徴は、（１）光電
表面より飛び出した電子と充電表面からナノメータオー
ダの距離に近づけた先端の細い導電性探針との間に流れ
るトンネル現像流を利用してＸ＆Ｉを検出および画像化
するため、ナノメータオーダーの分解能が得られる。The features of the image-type X-ray detector of this invention are: (1) It utilizes a tunnel development flow that flows between electrons ejected from the photoelectric surface and a thin-tipped conductive probe placed at a nanometer-order distance from the charging surface. Since the X&I is detected and imaged using the method, a resolution on the order of nanometers can be obtained.
（２）光電面体と探針の間に加えられる電圧は、１ｍＶ
からＩＶ程度と扱い昌い。(2) The voltage applied between the photocathode and the probe is 1 mV.
It can be treated as a to IV grade.
（３）発生した光電子の加速、集束、結像、電子線の可
視光化のための蛍光面および各種カメラ類を必要とせず
、小型化することができる、等が上げられる。(3) There is no need for a phosphor screen or various cameras for accelerating, focusing, and imaging the generated photoelectrons and for making the electron beam visible, and the device can be miniaturized.
従来、Ｘ線の画像化はＸ線イメージインテンシファイア
−に代表される。光電面体は、Ｘ線によって発光する入
力蛍光面と、その下へ密着して光を光電子に変換し真空
中へ放出させる充電面を備えている。そして、光電子像
は管内部の静電レンズ系により加速されつつ、集束、結
像し、出力蛍光面で電子線を受けて可視光を１次レンズ
およびカメラレンズで画像化する方法が用いられていた
。Conventionally, X-ray imaging is typified by an X-ray image intensifier. The photocathode includes an input phosphor screen that emits light by X-rays, and a charging surface that is in close contact with the bottom of the input phosphor screen to convert the light into photoelectrons and emit them into a vacuum. The photoelectron image is accelerated by an electrostatic lens system inside the tube, focused and formed into an image, and an output phosphor screen receives the electron beam, and the visible light is converted into an image using a primary lens and a camera lens. Ta.
このように従来の方法は入力蛍光面のＸ線変換効率およ
び充電面での光電子発生効率の点から、空間分解能１０
μｍ程度にとどまっていた。また、微弱な光電子量のた
めにバンクグランドも大きいなどの欠点があった。In this way, the conventional method has a spatial resolution of 10 in terms of the X-ray conversion efficiency of the input phosphor screen and the photoelectron generation efficiency of the charging surface.
It remained at about μm. In addition, there were drawbacks such as a large bank ground due to the weak amount of photoelectrons.
この発明は、上記の欠点を除去すべくなされたもので、
真空紫外からγ線の波長領域で、光電子像の加速、集束
、結像、出力蛍光面での可視光化、各種カメラレンズで
画像化する代わりに、光電子と細い導電性探針とのトン
ネル現象を利用することによって、高い空間分解能でＸ
線像を画像化するイメージ型Ｘ線検出器を提供すること
を目的としている。This invention was made to eliminate the above-mentioned drawbacks.
In the wavelength range from vacuum ultraviolet to γ-rays, instead of accelerating, focusing, and imaging photoelectron images, making them visible on an output phosphor screen, and creating images with various camera lenses, tunneling phenomenon between photoelectrons and thin conductive probes. By using
The object of the present invention is to provide an image-type X-ray detector that converts a ray image into an image.
Ｘ線検出器は、光電面と導電性探針の間の距離がナノメ
ータオーダーであるため、光電子は光電面に対してほぼ
垂直に発生するため、ナノメータの空間分解能を得るこ
とができる。しかも、流れるトンネル電流が１ｎＡ前後
で測定や制御は困難ではなくＳ／Ｎ比良く出力できる。In an X-ray detector, since the distance between the photocathode and the conductive probe is on the order of nanometers, photoelectrons are generated almost perpendicularly to the photocathode, so that a spatial resolution of nanometers can be obtained. Moreover, since the tunnel current flowing is around 1 nA, measurement and control are not difficult and output can be achieved with a good S/N ratio.
［実施例〕
以下、この発明の実施例を図面を参照しながら説明する
。[Example] Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図はこの発明に係るイメージ型Ｘ線検出器の構成図
を示したものである。Ｘ線などこの発明所定の波長領域
の線源１は、ピンホール２を通過し、試料３を通過・吸
収して光電面体４に到達する。Ｘ線量に伴って、充電面
より発生した光電子は、アクチュエータ６により充電面
上に走査している金属探針５との間でトンネル現象が生
ずる。FIG. 1 shows a block diagram of an image type X-ray detector according to the present invention. A radiation source 1 such as X-rays in a predetermined wavelength range of the present invention passes through a pinhole 2, passes through and is absorbed by a sample 3, and reaches a photocathode 4. A tunneling phenomenon occurs between the photoelectrons generated from the charging surface as the X-ray dose increases and the metal probe 5 is scanned by the actuator 6 over the charging surface.
このトンネル現象を用いて光電子の量を検出するために
は、以下の方法がある。There are the following methods for detecting the amount of photoelectrons using this tunneling phenomenon.
（１）トンネル電流を一定にするもので、光電子の量を
電圧変化として読む、探針と試料の間の距離を制御する
サーボ増幅器８を用いる。(1) A servo amplifier 8 is used that keeps the tunnel current constant, reads the amount of photoelectrons as a voltage change, and controls the distance between the probe and the sample.
（２）可変電流で光電子の量を読むもので、トンネル電
流ｔ流の変化を光電子量としてみる。(2) The amount of photoelectrons is read using a variable current, and the change in tunnel current t is considered as the amount of photoelectrons.
探針５をＸＹ方向に走査させるアクチュエータ６は、Ｘ
Ｙ走査回路７により制御される。また探針５を２方向（
光電面体４に対して垂直方向）の移動はサーボ回路８に
より制御される。光電面体４と探針５との間に生じるト
ンネルを流はトンネルｘｉ増幅器で増幅され、サーボ回
路にフィードバックされる。トンネル電流値と、ＸＹ走
査回路７とサーボ回路８の制御値を同期させてメモリ１
０に記憶させる。The actuator 6 that causes the probe 5 to scan in the X and Y directions is
It is controlled by the Y scanning circuit 7. Also, move the probe 5 in two directions (
The movement in the direction perpendicular to the photocathode 4 is controlled by a servo circuit 8. The tunnel flow generated between the photocathode 4 and the probe 5 is amplified by the tunnel xi amplifier and fed back to the servo circuit. The memory 1 is synchronized with the tunnel current value and the control values of the XY scanning circuit 7 and servo circuit 8.
Store it as 0.
［３１１ｉ ｆＬを電圧で微分するもので、電子やフォ
ノン状態密度の充電面内分布を得るもの。[311i This method differentiates fL with respect to voltage, and obtains the distribution of electron and phonon state densities within the charging plane.
第２図は、この発明に係るイメージ型Ｘ線検出器の一実
施例を示した説明図である。光電面体４は基板４２、入
力蛍光面４３、緩衝膜４４および光電面４５を順に真空
蒸着法によって形成する。FIG. 2 is an explanatory diagram showing one embodiment of the image type X-ray detector according to the present invention. The photocathode 4 is formed by sequentially forming a substrate 42, an input phosphor screen 43, a buffer film 44, and a photocathode 45 by vacuum evaporation.
入力蛍光面４３は、Ｃｓ１（Ｎａ）真空蒸着膜は、アル
ミニウム、ガラスおよびシリコン基板上に作製する。真
空蒸着は、１０−５〜１０−”Ｔ ｏ ｒ ｒの真空度
で基板表面温度を５０〜２００℃に加熱して、Ｎａｌを
１０−３〜１０−” モル比だけ混入した試料を蒸発
させ、膜厚５０〜３００ｔｔｍまで成長させ、焼鈍する
。緩衝膜４４は発光効率低下と、光電陰極の導電率の不
均一性を取り除くために、Ｓ ｉ Ｏ，Ｍｎ０ｚ Ａ
ｆｔ ０３あるいはＬｉＦを約１１００ｎ蒸着する。さ
らに光電面４５どしてＣｓｌあるいはＣ３ｓ、Ｓｂを３
０〜２００ｎｍ蒸発する。光電面４５と探針５の間に電
圧をかけるバイアス電圧源が介在している。For the input phosphor screen 43, a Cs1 (Na) vacuum-deposited film is fabricated on an aluminum, glass, and silicon substrate. Vacuum evaporation involves heating the substrate surface temperature to 50 to 200°C under a vacuum degree of 10-5 to 10-" Torr, and evaporating a sample mixed with Nal at a molar ratio of 10-3 to 10-". , grown to a film thickness of 50 to 300 ttm, and annealed. The buffer film 44 is made of SiO, Mn0zA, in order to reduce luminous efficiency and eliminate non-uniformity of conductivity of the photocathode.
Deposit about 1100 nm of ft 03 or LiF. Furthermore, Csl, C3s, and Sb are added to the photocathode 45.
Evaporates from 0 to 200 nm. A bias voltage source that applies a voltage between the photocathode 45 and the probe 5 is interposed.
光電面上をナノメータオーダの距離で走査する細い金属
の針５は、タングステンまたは白金の先端を機械加工あ
るいは電解研磨した探針５で、先端の曲率半径は約１１
００ｎである。探針５を３次元ＸＹＺ方向に走査するア
クチュエータ６に圧電素子を使用する。圧電素子の材料
としてチタン酸ジルコン酸鉛などを用いる。走査範囲は
、光電面上を１μｍＸ１μｍ〜１ｍｍＸ ｌ ｍｍの領
域で走査できる。The thin metal needle 5 that scans the photocathode at a distance on the order of nanometers is a probe 5 whose tip is machined or electrolytically polished from tungsten or platinum, and the radius of curvature of the tip is approximately 11
It is 00n. A piezoelectric element is used for the actuator 6 that scans the probe 5 in three-dimensional XYZ directions. Lead zirconate titanate is used as the material for the piezoelectric element. The scanning range is 1 μm×1 μm to 1 mm×1 mm on the photocathode.
発生した光電子は電流あるいは電圧変化として出力され
る。マイクロコンピュータ１１の処理回路系を通して表
示装置１２へ画像化される。以上によって構成されたイ
メージ型Ｘｉ検出器は、光電面４５と導電性探針の間の
距離がナノメータオーダであるため、光電子は光電面４
５に対してほぼ垂直に発生するため、ナノメータの空間
分解能を得ることができる。しかも、流れるトンネル電
流が１ｎＡ前後で測定や制御は困難ではなくＳ／Ｎ比良
く出力できる。The generated photoelectrons are output as current or voltage changes. The image is displayed on the display device 12 through the processing circuit system of the microcomputer 11. In the image-type Xi detector configured as described above, since the distance between the photocathode 45 and the conductive probe is on the order of nanometers, photoelectrons are transferred to the photocathode 45.
5, a spatial resolution of nanometers can be obtained. Moreover, since the tunnel current flowing is around 1 nA, measurement and control are not difficult and output can be achieved with a good S/N ratio.
この発明によるイメージ型Ｘ線検出器は上述のごとく、
光電面体と発生した光電子を導電性探針で検出する方法
をとっているので、ナノメータオーダの空間分解能を有
する。さらに、光電面体と探針との間にかかる電圧は、
１ｍＶ〜１ｖ程度と扱いやすく、また発生した光電子の
加速、集束、結像、電子線の可視光化のための蛍光面お
よびレンズ・カメラ類を必要とせず、小型化することが
できる。このため従来高い空間分解能が要求されていた
Ｘ線ホログラフィ−１Ｘ＆！顕微鏡、Ｘ４Ｉ透遍装置等
の研究用分Ｆｒ装置や工業用検査装置および医用放射線
画像装置の検出器として広く応用できる。As mentioned above, the image type X-ray detector according to the present invention has the following features:
Since the photocathode and the generated photoelectrons are detected using a conductive probe, it has a spatial resolution on the order of nanometers. Furthermore, the voltage applied between the photocathode and the probe is
It is easy to handle at about 1 mV to 1 V, and can be miniaturized without requiring a phosphor screen, lens, or camera for accelerating, focusing, and imaging the generated photoelectrons, and making the electron beam visible. For this reason, X-ray holography, which conventionally required high spatial resolution - 1X&! It can be widely applied as a detector for research Fr devices such as microscopes and X4I transmissive devices, industrial inspection devices, and medical radiation imaging devices.
第１図はこの発明に係るイメージ型Ｘ線検出器の構成を
示すブロック図、第２図はこの発明の実施例を示すブロ
ック図である。
・Ｘ線
、ピンホール
・試料
・光電面体
・探針
・３次元アクチュエータ
・・ＸＹ走査回路
・・サーボ回路
・トンネル電流増幅器
・・メモリ
・・マイクロコンピュータ
・・表示装置
・・基板
・・蛍光膜
・・緩衝膜
・・光１ｆ膜
以上
出願人 セイコー電子工業株式会社
代理人 弁理士 林 敬 之 助FIG. 1 is a block diagram showing the configuration of an image type X-ray detector according to the invention, and FIG. 2 is a block diagram showing an embodiment of the invention.・X-ray, pinhole, sample, photocathode, probe, three-dimensional actuator, XY scanning circuit, servo circuit, tunnel current amplifier, memory, microcomputer, display device, substrate, fluorescent film,・Buffer film: Optical 1F film or above Applicant: Seiko Electronic Industries Co., Ltd. Patent attorney: Keinosuke Hayashi
Claims (2)
た光電子を検出する導電性探針からなることを特徴とす
るイメージ型Ｘ線検出器。(1) An image-type X-ray detector comprising a photocathode that generates photoelectrons upon incidence of X-rays and a conductive probe that detects the generated photoelectrons.
層構造であることを特徴とする請求項１記載のイメージ
型Ｘ線検出器。 （２）使用波長が真空紫外線からγ線の領域であること
を特徴とする請求項１記載のイメージ型Ｘ線検出器。(2) The image type X-ray detector according to claim 1, wherein the photocathode has a multilayer structure including a fluorescent screen that emits light upon incidence of X-rays. (2) The image type X-ray detector according to claim 1, wherein the wavelength used is in the range from vacuum ultraviolet rays to gamma rays.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2277434A JPH04152289A (en) | 1990-10-16 | 1990-10-16 | Image type x-ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2277434A JPH04152289A (en) | 1990-10-16 | 1990-10-16 | Image type x-ray detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04152289A true JPH04152289A (en) | 1992-05-26 |
Family
ID=17583509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2277434A Pending JPH04152289A (en) | 1990-10-16 | 1990-10-16 | Image type x-ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04152289A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5464977A (en) * | 1993-03-10 | 1995-11-07 | Nikon Corporation | Scanning optical detection apparatus and method, and photoelectric conversion medium applied thereto |
| US8441474B2 (en) | 2008-06-25 | 2013-05-14 | Aristocrat Technologies Australia Pty Limited | Method and system for setting display resolution |
-
1990
- 1990-10-16 JP JP2277434A patent/JPH04152289A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5464977A (en) * | 1993-03-10 | 1995-11-07 | Nikon Corporation | Scanning optical detection apparatus and method, and photoelectric conversion medium applied thereto |
| US8441474B2 (en) | 2008-06-25 | 2013-05-14 | Aristocrat Technologies Australia Pty Limited | Method and system for setting display resolution |
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