JPH04151829A - Wafer carrier for silicon wafer cleaning use - Google Patents
Wafer carrier for silicon wafer cleaning useInfo
- Publication number
- JPH04151829A JPH04151829A JP27531790A JP27531790A JPH04151829A JP H04151829 A JPH04151829 A JP H04151829A JP 27531790 A JP27531790 A JP 27531790A JP 27531790 A JP27531790 A JP 27531790A JP H04151829 A JPH04151829 A JP H04151829A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- cleaning
- cleaning liquid
- carrier
- wafer carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 42
- 229910052710 silicon Inorganic materials 0.000 title claims description 42
- 239000010703 silicon Substances 0.000 title claims description 42
- 235000012431 wafers Nutrition 0.000 claims abstract description 74
- 238000005192 partition Methods 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 abstract description 20
- 239000000356 contaminant Substances 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 7
- 238000000638 solvent extraction Methods 0.000 abstract 2
- 230000003749 cleanliness Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、シリコンウェハをウェハキャリアに収容し、
ウェハキャリアごと洗浄液に浸漬して洗浄するために用
いるシリコンウェハ洗浄用ウェハキャリアに関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention provides a method for storing a silicon wafer in a wafer carrier,
The present invention relates to a wafer carrier for cleaning silicon wafers used for cleaning the wafer carrier by immersing the wafer carrier in a cleaning liquid.
（従来の技術）
シリコンウェハの製造工程において、シリコンウェハの
表面は清浄に保つ必要がある６たとえば、フォトエツチ
ングの際にシリコンウェハの表面に塵が付着している等
の汚染があると配線ショートや断線の原因となる等、製
品の性能と信頼性を向上させるためにはシリコンウェハ
の表面の汚染物質を極力低減させる必要がある。そのた
め、シリコンウェハ製造工程中においても酸化膜生成ｌ
１ｉＪの前洗浄、７オトエツチング後の後洗浄等の洗浄
上程がある。(Prior art) In the silicon wafer manufacturing process, it is necessary to keep the surface of the silicon wafer clean6. For example, if there is contamination such as dust adhering to the surface of the silicon wafer during photoetching, wiring shorts may occur. In order to improve product performance and reliability, it is necessary to reduce contaminants on the surface of silicon wafers as much as possible. Therefore, even during the silicon wafer manufacturing process, oxide film is generated.
There are cleaning steps such as a 1iJ pre-cleaning and a post-cleaning after 7 etchings.
シリコンウェハの洗浄は、第４図に示すようにウェハキ
ャリア２にシリコンウェハ１を何枚かまとめて平行に収
容し、Ｎ Ｈ４０１−１＋１−１２０２＋０２０、ＨＣ
Ｉ＋０２０２＋ １１２０等の薬液の入った洗浄槽４に
ウェハキャリア２ごと浸漬し、薬液洗浄後は後続の洗浄
槽４で純水に浸漬することにより行っている。For cleaning silicon wafers, several silicon wafers 1 are stored in parallel in a wafer carrier 2 as shown in FIG.
The wafer carrier 2 is immersed together with the cleaning tank 4 containing a chemical solution such as I+0202+ 1120, and after cleaning with the chemical solution, it is immersed in pure water in the subsequent cleaning tank 4.
（発明が解決しようとする課題）
ところで、従来は第２図に示すようにウェハキャリア２
にシリコンウェハ１をすべて同方向に向けて収容してい
たので、シリコンウェハの表面１ａと隣接するシリコン
ウェハの裏面１ｂとが対向することになる。そして、こ
の表面と裏面とでは洗浄前に４１着している汚染物質の
量が異なる。すなわち、表面側は集積回路を作成する側
であるため他１こ接触゛しないように取り扱われるが、
裏面は治具等との接触を避けることができないので、ど
うしても裏面側の汚染が激しくなってしまい、裏面は表
面に比較して１０倍以上も付着物が多い。(Problem to be solved by the invention) By the way, conventionally, as shown in FIG.
Since the silicon wafers 1 were all housed facing in the same direction, the front surface 1a of the silicon wafer and the back surface 1b of the adjacent silicon wafer face each other. The amount of contaminants deposited on the front and back surfaces differs before cleaning. In other words, since the front side is the side where integrated circuits are created, it is handled so as not to come in contact with anything else.
Since contact with jigs and the like cannot be avoided on the back side, contamination on the back side inevitably becomes severe, and there are ten times more deposits on the back side than on the front side.
そうすると、ウェハキャリアに収容されたシリコンウェ
ハ間の間隔は４ｍ＋ｎ程度であるので、下方から洗浄液
がシリコンウェハ間を上方に流れて洗浄する過程におい
て、裏面１１〕から分離した汚染物質が向かい側の隣接
シリコンウェハの表面１ａに再付着してしまうという問
題があった。この汚染物質の転写は第３図に示すように
洗浄液の流量を多くしてやれば減少するので、従来はこ
れにより対処できた。In this case, since the distance between the silicon wafers housed in the wafer carrier is about 4m+n, in the cleaning process in which the cleaning liquid flows upward between the silicon wafers from below, contaminants separated from the back surface 11] are transferred to the adjacent silicon wafers on the opposite side. There was a problem in that it re-adhered to the surface 1a of the wafer. This transfer of contaminants can be reduced by increasing the flow rate of the cleaning liquid as shown in FIG. 3, and this has conventionally been a solution.
しかし、回路の集積度が高くなるにしたがって高清浄度
が要求されるようになり、洗浄液の流量を増すだけでは
解決できないことになってきた。However, as the degree of integration of circuits increases, high cleanliness is required, and it has become impossible to solve the problem by simply increasing the flow rate of the cleaning liquid.
そこで、本発明は洗浄液の流量を増加させないでもこの
汚染物質の転写の問題を解決できるシリコンウェハ洗浄
用ウェハキャリアをＪＩＬ供する。Therefore, the present invention provides a wafer carrier for silicon wafer cleaning that can solve the problem of contaminant transfer without increasing the flow rate of the cleaning liquid.
（課題を解決するための手Ｖｉ）
本発明は、複数枚のシリコンウェハをウェハキャリアに
収容し、ウェハキャリアごと洗浄液中に浸漬して洗浄す
るシリコンウェハ洗浄用ウェハキャリアにおいて、シリ
コンウェハを１枚毎に区切って収容する仕切り板を設け
たことを特徴とするシリコンウェハ洗浄用ウェハキャリ
アである。(Method for Solving the Problem Vi) The present invention provides a wafer carrier for cleaning silicon wafers in which a plurality of silicon wafers are housed in a wafer carrier and the wafer carriers are immersed in a cleaning liquid for cleaning. This wafer carrier for cleaning silicon wafers is characterized in that it is provided with a partition plate that separates and accommodates each silicon wafer.
（作用）
本発明によれば、第１図に示すように、ウェハキャリア
２にはシリコンウェハ１を１枚毎に区切って収容する仕
切り板３が設けられており、シリコンウェハの表面１ａ
が裏面１１〕と直接向かい合うことはなくなり、裏面１
１＋から表面１ａへの汚染物質の転写の問題は生じない
６
本発明のウェハキャリアを用いてシリコンウェハを洗浄
するには、各仕切り板３の間にシリコンウェハを１枚ず
つ収容し、洗浄液５を満たした洗浄槽４１こ浸漬する。(Function) According to the present invention, as shown in FIG. 1, the wafer carrier 2 is provided with a partition plate 3 that separates and accommodates the silicon wafers 1 one by one.
is no longer directly facing the back side 11], and the back side 1
The problem of transfer of contaminants from 1+ to surface 1a does not occur.6 To clean silicon wafers using the wafer carrier of the present invention, one silicon wafer is placed between each partition plate 3, and cleaning liquid 5 The water is immersed in a cleaning tank 41 filled with water.
そして、洗浄液供給管６を通して洗浄液を洗浄槽４の下
部から供給する。洗浄液はウェハキャリア２の底側から
各シリコンウニ／％ １の間を通って上方へ流れ、洗浄
槽４の上部からオーバーフローする。このように、シリ
コンウェハ間を通過した洗浄液はその後オーバーフロー
するので、シリコンウエノ）間を通過する際の汚染物質
の転写さえ防止すれば、シリコンウエノ）表面の清浄度
を向」ニさせることが可能となる。Then, the cleaning liquid is supplied from the lower part of the cleaning tank 4 through the cleaning liquid supply pipe 6. The cleaning liquid flows upward from the bottom side of the wafer carrier 2 through between the silicon urchins/%1, and overflows from the top of the cleaning tank 4. In this way, the cleaning liquid that has passed between the silicon wafers will overflow, so as long as the transfer of contaminants when passing between the silicon wafers is prevented, the cleanliness of the silicon wafer surface can be improved. becomes.
ウェハキャリアに設ける仕切り板の材質は、ウェハキャ
リア自体の材質と同一のものとするのがよい。このよう
な仕切り板を設けたウエノ）キャリアを製造することは
特に困難なことではない。また、仕切り板を設けること
によりシリコンウエノ）の収容量は減少するが、シリコ
ンウエノ）表面の清浄度を向上させることができるので
、この収容量の減少は重要な問題ではない。The material of the partition plate provided on the wafer carrier is preferably the same as the material of the wafer carrier itself. It is not particularly difficult to manufacture a urethane carrier provided with such a partition plate. Further, by providing the partition plate, the capacity of the silicon wafer is reduced, but since the cleanliness of the surface of the silicon wafer can be improved, this reduction in the capacity is not a serious problem.
（実施例）
本発明のウェハキャリアを用いてシリコンウェハを洗浄
したところ、表面と裏面とが向かν１合う従来の洗浄力
法の場合と比較してシリコソウエフ１表面の汚染度が１
／３〜１１５に低下した。(Example) When a silicon wafer was cleaned using the wafer carrier of the present invention, the degree of contamination on the surface of the silicon wafer 1 was 1 compared to the case of the conventional cleaning power method in which the front and back surfaces are opposite to each other by ν1.
/3 to 115.
（発明の効果）
本発明のウェハキャリアを用いてシリコンウェハを洗浄
することにより、洗浄液中でシリコンウェハ裏面から分
離した汚染物質が表面に河伺着するのを洗浄液の流量を
増加させることなく防止することかで外、集積度の向上
に伴う高清浄度の要求に応じることが可能となる。(Effects of the Invention) By cleaning silicon wafers using the wafer carrier of the present invention, contaminants separated from the back side of the silicon wafer in the cleaning solution can be prevented from reaching the surface without increasing the flow rate of the cleaning solution. In addition, it becomes possible to meet the demand for high cleanliness as the degree of integration increases.
ｔＩＳ１図は本発明の実施例を示す図、第２図は従来の
シリコンウェハ洗浄方法の問題点を示す図、
ｆｔ４３図は洗浄液の流量とシリコンウェハ表面への付
着物数との関係を模式的に示す図、第４図はシリコンウ
ェハの洗浄工程を模式的に示す図である。
１・・・シリコンウェハ、１ｇ・・・表面、１１＋・・
・裏面、２・・・ウェハキャリア、３・・・仕切り板、
４・・・洗浄槽、５・・・洗浄液、６・・・洗浄液供給
管、７・・・洗浄室。tIS1 diagram shows an embodiment of the present invention, FIG. 2 shows problems with the conventional silicon wafer cleaning method, and ft43 diagram schematically shows the relationship between the flow rate of the cleaning liquid and the number of deposits on the silicon wafer surface. FIG. 4 is a diagram schematically showing a silicon wafer cleaning process. 1...Silicon wafer, 1g...Surface, 11+...
・Back side, 2... wafer carrier, 3... partition plate,
4...Cleaning tank, 5...Cleaning liquid, 6...Cleaning liquid supply pipe, 7...Cleaning chamber.
Claims (1)
し、ウェハキャリアごと洗浄液中に浸漬して洗浄するシ
リコンウェハ洗浄用ウェハキャリアにおいて、シリコン
ウェハを１枚毎に区切って収容する仕切り板を設けたこ
とを特徴とするシリコンウェハ洗浄用ウェハキャリア。(1) In a wafer carrier for cleaning silicon wafers in which a plurality of silicon wafers are housed in a wafer carrier and the wafer carrier is immersed in a cleaning solution for cleaning, a partition plate is provided to separate and accommodate the silicon wafers one by one. A wafer carrier for cleaning silicon wafers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27531790A JPH04151829A (en) | 1990-10-16 | 1990-10-16 | Wafer carrier for silicon wafer cleaning use |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27531790A JPH04151829A (en) | 1990-10-16 | 1990-10-16 | Wafer carrier for silicon wafer cleaning use |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04151829A true JPH04151829A (en) | 1992-05-25 |
Family
ID=17553764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27531790A Pending JPH04151829A (en) | 1990-10-16 | 1990-10-16 | Wafer carrier for silicon wafer cleaning use |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04151829A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050056015A (en) * | 2003-12-09 | 2005-06-14 | 동부아남반도체 주식회사 | Wafer lifter for use in wet station bath |
| JP2007324567A (en) * | 2006-06-05 | 2007-12-13 | Samsung Electronics Co Ltd | Substrate etching apparatus |
-
1990
- 1990-10-16 JP JP27531790A patent/JPH04151829A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050056015A (en) * | 2003-12-09 | 2005-06-14 | 동부아남반도체 주식회사 | Wafer lifter for use in wet station bath |
| JP2007324567A (en) * | 2006-06-05 | 2007-12-13 | Samsung Electronics Co Ltd | Substrate etching apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6274059B1 (en) | Method to remove metals in a scrubber | |
| KR101376897B1 (en) | Post etch wafer surface cleaning with liquid meniscus | |
| JP2598359B2 (en) | Substrate cleaning equipment | |
| KR101194138B1 (en) | Systems and Methods for Charging a Cleaning Solution Used for Cleaning Integrated Circuit Substrates | |
| JP2598360B2 (en) | Substrate cleaning equipment | |
| JPH04151828A (en) | Chemical atmosphere separating device | |
| JP2920165B2 (en) | Overflow tank for single wafer cleaning | |
| JPH04151829A (en) | Wafer carrier for silicon wafer cleaning use | |
| JPH04151833A (en) | Cleaning method for silicon wafer | |
| JPS63110732A (en) | Washing method for semiconductor substrate | |
| JP2840799B2 (en) | Single wafer cleaning method and apparatus | |
| KR100459335B1 (en) | Method and system for wafer array | |
| JPH05102121A (en) | Method and apparatus for cleaning of sheet type | |
| JP2984006B2 (en) | Cleaning equipment | |
| JPH0821566B2 (en) | Cleaning method for semiconductor wafer | |
| JPS5866334A (en) | Treating device of semiconductor substrate | |
| JPH08195431A (en) | Substrate holding implement and cleaning apparatus | |
| JP3005507U (en) | Carrierless wafer cleaning device | |
| JPH07297162A (en) | Cleaning equipment for semiconductor substrate | |
| JPS59123581A (en) | Washing apparatus | |
| JPH0845887A (en) | Wafer cleaning method | |
| JPH02125429A (en) | Cleaning apparatus | |
| JPH01245537A (en) | Wafer carrier | |
| JP2003190901A (en) | Substrate washing apparatus and substrate washing tool | |
| JPH0869988A (en) | Wafer cleaning carrier |