JPH04112478A - Pyrolytic boron nitride jig - Google Patents
Pyrolytic boron nitride jigInfo
- Publication number
- JPH04112478A JPH04112478A JP23040590A JP23040590A JPH04112478A JP H04112478 A JPH04112478 A JP H04112478A JP 23040590 A JP23040590 A JP 23040590A JP 23040590 A JP23040590 A JP 23040590A JP H04112478 A JPH04112478 A JP H04112478A
- Authority
- JP
- Japan
- Prior art keywords
- pbn
- jig
- layer
- heating
- boron nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 24
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 23
- 238000010030 laminating Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 239000012535 impurity Substances 0.000 abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract description 3
- 229910052582 BN Inorganic materials 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract 2
- 238000000407 epitaxy Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000002296 pyrolytic carbon Substances 0.000 description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- -1 nitride nitride Chemical class 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Other Surface Treatments For Metallic Materials (AREA)
- Surface Heating Bodies (AREA)
- Laminated Bodies (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は熱分解窒化ほう素泊具、特には熱分解窒化ほう
集成形体に炭化けい素からなる導電膜を接合したもので
あるために、真空装置内の加熱などで装着が容易であり
、ヒーターサイクルにも安定な熱源とすることができる
加熱用熱分解窒化ほう素泊具に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a pyrolytic boron nitride shim, particularly a pyrolytic nitride nitride molded body bonded with a conductive film made of silicon carbide. The present invention relates to a pyrolytic boron nitride holder for heating, which is easy to install for heating in a vacuum device, and can be used as a stable heat source in a heater cycle.
（従来の技術）
熱分解窒化ほう素（以下ＰＢＮと略記する）は通常塩化
ほう素（ＢＣｌ、）やフッ化ほう素（ＢＦ３）などのハ
ロゲン化ほう素とアンモニアガスとを高温に保持した炉
内で熱分解反応させ、所定形状の基体表面に窒化ほう素
を析出させる化学気相反応法ＣＣＶＤ法）によって製造
されるが、このものは高純度で耐熱性にすぐれており、
金属にぬれない、脱ガスがないという特徴をもフている
ことから分子線エピタキシー用セル、治具なと高真空中
で加熱される容器や治具として用いられている。(Prior art) Pyrolytic boron nitride (hereinafter abbreviated as PBN) is usually produced in a furnace in which boron halides such as boron chloride (BCl) or boron fluoride (BF3) and ammonia gas are kept at high temperatures. It is manufactured by a chemical vapor phase reaction method (CCVD method) in which boron nitride is precipitated on the surface of a predetermined shape of substrate through a thermal decomposition reaction within the chamber, and this product has high purity and excellent heat resistance.
Because it does not wet metals and does not cause outgassing, it is used as cells and jigs for molecular beam epitaxy, as well as containers and jigs that are heated in high vacuum.
（発明が解決しようとする課題）
しかし、このＰＢＮを用いた加熱器もこれを加熱するた
めにはワイヤー状、プレート状のタングステンまたはタ
ンタルなどのような高融点金属からなるヒーターを装着
したものとされているために、これには１）このヒータ
ーを装置内に装着するための部品数が多くなり、その取
り付は方法も複雑となる、２）ヒーターが直接セルに触
れていないので温度コントロールが難しい、３）ヒータ
ーが金属製であるために高温で変形が発生し易く、ショ
ート、スパークなどのトラブルにつながるケースが時々
発生する、という欠点がある。(Problem to be solved by the invention) However, in order to heat the heater using PBN, it is necessary to install a wire-shaped or plate-shaped heater made of a high-melting point metal such as tungsten or tantalum. This is due to the following reasons: 1) The number of parts required to install this heater inside the device is large and the installation method is complicated; 2) Temperature control is difficult because the heater is not in direct contact with the cell. 3) Since the heater is made of metal, it tends to deform at high temperatures, which can sometimes lead to problems such as short circuits and sparks.
そのため、これには導電体をヒーターベース上に形成し
てなる二層ヒーターからなるものも提案されている（特
開昭８３−２４１９２１号公報参照）が、このものは導
電体層がタングステン、タンタルや炭素からなるもので
、これには■剥離し易い、■減圧加熱等において不純物
の飛散があるなどの不利があるために好ましくないとい
う欠点がある。Therefore, a two-layer heater in which a conductor is formed on a heater base has been proposed (see Japanese Patent Laid-Open No. 83-241921), but in this heater, the conductor layer is made of tungsten, tantalum, etc. This material is undesirable because it has disadvantages such as (1) easy peeling, and (2) scattering of impurities during heating under reduced pressure.
（課題を解決するための手段）
本発明はこのような不利を解決したＰＢＮ治具に関する
もので、これはＰＢＮ成形体の表面に炭化けい素を積層
するか、さらにはこれに熱分解窒化ほう素を積層してな
る加熱用熱分解窒化ほう素治具に関するものである。(Means for Solving the Problems) The present invention relates to a PBN jig that solves the above disadvantages, and is made by laminating silicon carbide on the surface of a PBN molded body, or by adding pyrolytic nitriding to this. This invention relates to a heating pyrolytic boron nitride jig made of laminated layers of pyrolytic boron nitride.
すなわち、本発明者らはＰＢＮを用いた加熱治具を開発
すべく種々検討した結果、ＰＢＮ成形体の表面に例えば
ＣＶＤ法で炭化けい素よりなる導電性抵抗体膜を蒸着し
、これを機械加工してヒーターパターンを形成させるか
、またはその外側にＰＢＮの層を形成する。そして、こ
の炭化けい素層に通電すればこれが加熱されるので、こ
れを加熱治具として使用することができることを見出す
と共に、炭化けい素層の外側にＰＢＮ層を形成したもの
は減圧加熱中でもこの炭化けい素層から不純物が飛散す
ることがなく、また、このヒーターとなる炭化けい素か
らなる導電性抵抗体膜がＰＢＮと直接接触しているので
温度コントロールが容易で、しかもこれは変形しないの
で事故を起すこともないということを確認して本発明を
完成させた。That is, as a result of various studies aimed at developing a heating jig using PBN, the present inventors deposited a conductive resistor film made of silicon carbide on the surface of a PBN molded body by, for example, the CVD method, and then mechanically deposited a conductive resistor film made of silicon carbide. Process it to form a heater pattern or form a layer of PBN on the outside. They discovered that this silicon carbide layer can be used as a heating jig because it can be heated by applying electricity to it, and that a PBN layer formed on the outside of the silicon carbide layer can be used even during reduced pressure heating. Impurities do not scatter from the silicon carbide layer, and since the conductive resistor film made of silicon carbide that serves as the heater is in direct contact with the PBN, temperature control is easy, and it does not deform. The present invention was completed after confirming that no accidents would occur.
以下にさらにこれを詳述する。This will be explained in further detail below.
（作用）
本発明はＰＢＮ成形体表面に炭化けい素からなる導電性
抵抗体膜、またはこの上にざらにＰＢＮ膜とを設けてな
る加熱用ＰＢＮ治具に関するものである。(Function) The present invention relates to a heating PBN jig comprising a conductive resistor film made of silicon carbide on the surface of a PBN molded body, or a PBN film roughly provided thereon.
本発明のＰＢＮ治具を構成するＰＢＮ成形体は従来公知
の方法で作られたものとすればよい。したがって、これ
は塩化ほう素 （ＢＣｊ２３）やフッ素ほう素（ＢＦ３
）などのハロゲン化ほう素とアンモニアガスとを約２，
０００℃の高温真空炉中で反応させ、生成したＰＢＮを
基体上に析出させることによって作ったものとすればよ
いが、この形状はルツボ状、セル状、ボート状などの容
器形状、円盤状、棒状、バイブ状などのようなヒーター
形状とすればよい。The PBN molded body constituting the PBN jig of the present invention may be made by a conventionally known method. Therefore, it is similar to boron chloride (BCj23) and boron fluoride (BF3).
) and ammonia gas in a mixture of about 2,
It may be made by reacting in a high-temperature vacuum furnace at 000°C and depositing the generated PBN on a substrate, but this shape may be a container shape such as a crucible, a cell, a boat, a disc, or The heater may be shaped like a rod or a vibrator.
また、ＰＢＮ成形体表面に対する炭化けい素からなる半
導性抵抗体膜の形成方法は具体的には四塩化けい素とメ
タンガスとをｔ、ｏｏｏ〜１，３００℃で反応させてＰ
ＢＮ成形体上に炭化けい素を蒸着させればよく、これに
よれば１）高温で熱変形しない、２）コンパクトでかさ
ばらない、３）耐ヒートサイクル性があり、高寿命であ
る、という特徴をもつ炭化けい素からなる導電性抵抗体
膜を容易に得ることができる。また、高純度が要求され
る場面に用いる場合、本発明のＰＢＮ治具はこの炭化け
い素皮膜の上にざらにＰＢＮを蒸着させることが必要と
される。In addition, the method for forming a semiconducting resistor film made of silicon carbide on the surface of a PBN molded body is specifically to react silicon tetrachloride and methane gas at t,ooo to 1,300°C.
Silicon carbide can be deposited on a BN molded body, and this has the following characteristics: 1) It does not undergo thermal deformation at high temperatures, 2) It is compact and not bulky, and 3) It has heat cycle resistance and has a long life. It is possible to easily obtain a conductive resistor film made of silicon carbide. Further, when used in situations where high purity is required, the PBN jig of the present invention is required to roughly deposit PBN on the silicon carbide film.
また、例えばプレート状ＰＢＮの片面のみではなく、表
裏２面の各々に炭化けい素膜を形成し、場合によフては
さらにその上にＰＢＮ膜を蒸着して、ＳｉＣ膜またはそ
の上にＰＢＮを交互に形成させたものは厚さ方向での温
度バランスが良くなり、熱的変形がさらに小さくなるの
で安定したヒーターとして使用できるという有利性が与
えられる。In addition, for example, a silicon carbide film is formed not only on one side of a plate-shaped PBN but on each of the front and back sides, and in some cases, a PBN film is further deposited on the SiC film or on the PBN film. The structure in which these are alternately formed has a better temperature balance in the thickness direction and further reduces thermal deformation, giving the advantage that it can be used as a stable heater.
なお、本発明のＰＢＮ治具を構成するＰＢＮ成形体表面
に形成される導電性抵抗体膜は導電性で適宜の抵抗値を
もつものであり、化学、気相反応法（ＣＶＤ法）などで
蒸着できる性質をもつものであればよいということから
、熱分解炭素、タングステンなどとすることも考えられ
るけれども、熱分解炭素は０〜１，０００℃における熱
膨張係数が−０，２〜１．２ ｘｌＯ−’／ｌとＰＢＮ
の２．５ ｘｌＯ−’／ｌよりも小さく、しかもこれは
その抵抗値が温度の上昇と共に半減してしまうという難
点があるし、タングステンもその抵抗値が温度上昇と共
に増加し、１，０００℃付近では倍増し、これはまた熱
膨張率も４．５ Ｘｌ０−’／ｌ：とＰＢＮと異なるた
めに剥離し易いという不利があるので、この導電性抵抗
体膜としては抵抗値の温度依存性が少なく、温度的に安
定であり、熱膨張係数も３．５ Ｘｌ０−６／’ＣとＰ
ｉｌＮに比較的近い炭化けい素とすることが必要とされ
る。The conductive resistor film formed on the surface of the PBN molded body constituting the PBN jig of the present invention is conductive and has an appropriate resistance value, and can be formed by a chemical, vapor phase reaction method (CVD method), etc. Pyrolytic carbon, tungsten, etc. may be used as long as it has properties that allow vapor deposition, but pyrolytic carbon has a coefficient of thermal expansion of -0.2 to 1.0 at 0 to 1,000°C. 2 xlO-'/l and PBN
This is smaller than 2.5 xlO-'/l, and this has the disadvantage that its resistance value is halved as the temperature rises, and the resistance value of tungsten also increases as the temperature rises, and at 1,000℃ This also has a thermal expansion coefficient of 4.5 It is thermally stable, with a coefficient of thermal expansion of 3.5 Xl0-6/'C and P
A silicon carbide relatively close to ilN is required.
（実施例） つぎに本発明の実施例、比較例をあげる。(Example) Next, examples of the present invention and comparative examples will be given.
実施例１
第１図に示したような形状をした、つばをもった２０ｍ
ａ＋φｘ １１０ ｍｍｌのＰＢＮセルを真空加熱炉内
に設置し、セルの内側にはガスが接触しないようにマス
キングしてから炉内を１トール以下に減圧し、１，１０
０℃に加熱した。ついで、この炉内に四塩化けい素（Ｓ
ｔ（、＋１．）を４ｎ＋Ｉｌ／分、キャリアガスとして
の水素ガスを２０ｍｆｌ／分、メタンガス４ｍ１ｌ１分
を供給して反応させたところ、ＰＢＮセルの表面に厚さ
５０μｍの炭化けい素（ＳｉＣ）膜が蒸着されたので、
冷却後これを取り出し、これに第２図に示したようにモ
リブデンの電極を取りつけたところ、これは約４０Ωの
抵抗値を示した。Example 1 A 20m long tube with a brim shaped as shown in Figure 1.
A + φx 110 mml PBN cell was placed in a vacuum heating furnace, the inside of the cell was masked to prevent gas from coming into contact with it, the pressure inside the furnace was reduced to 1 torr or less, and the temperature was 1,10 mm.
Heated to 0°C. Next, silicon tetrachloride (S
When reacting by supplying t(, +1.) at 4n+Il/min, hydrogen gas as a carrier gas at 20 mfl/min, and methane gas at 4 ml/min, a silicon carbide (SiC) film with a thickness of 50 μm was formed on the surface of the PBN cell. was deposited, so
After cooling, it was taken out and a molybdenum electrode was attached to it as shown in FIG. 2, and it showed a resistance value of about 40Ω.
つぎに第３図に示したようにこのＰＢＮ治具１を真空容
器２の中に入れ、これにモリブデン板３を取りつけ、こ
の装置の外に放射温度計４を、またこのＰＢＮ治具１に
熱電対５を取りつけ、これに電源６を結び、交流電流を
流してＰＢＮ治具を加熱したところ、この電力とＰＢＮ
治其の温度について第４図に示したとおりの結果が得ら
れ、これについて１０００℃までの加熱、冷却を５０回
繰り返したが、このセルには何の異常も見られなかった
。Next, as shown in FIG. 3, this PBN jig 1 is placed in a vacuum container 2, a molybdenum plate 3 is attached to it, and a radiation thermometer 4 is attached to the outside of this device. When a thermocouple 5 was attached, a power supply 6 was connected to it, and an alternating current was applied to heat the PBN jig.
Regarding the cell temperature, the results shown in FIG. 4 were obtained, and the cell was heated to 1000° C. and cooled 50 times, but no abnormality was observed in the cell.
実施例２
実施例１で得られた炭化けい素を被覆したＰＢＮセルの
電極を接触させる部分をＰＢＮ製の厚さ１ｍｍ、幅５ｍ
ｍのリングによって覆い、ＣＶＤ装置内にセットし、１
，７００℃に昇温した。Example 2 The part where the electrode of the PBN cell coated with silicon carbide obtained in Example 1 comes into contact was made of PBN with a thickness of 1 mm and a width of 5 m.
Cover it with a ring of m and set it in the CVD equipment.
, the temperature was raised to 700°C.
ついで、ここにＮＨ３ガス３０ｃｃ／分、ＢＣＩＩ ３
ガス１０ｃｃ／分を流し込み、圧力が０．５トールなる
ように減圧ポンプ、排気弁でコントロールしてＰＢＮ膜
をコーティングし、膜厚が２０μｍとなったところで反
応を止めて降温した。Next, NH3 gas 30cc/min, BCII 3
A PBN film was coated by flowing gas at 10 cc/min and controlling the pressure to 0.5 torr using a pressure reducing pump and an exhaust valve. When the film thickness reached 20 μm, the reaction was stopped and the temperature was lowered.
このようにして作られたＰＢＮコーティングＳｉＣヒー
ター付のＰＢＮセルを実施例１と同様に１，０００℃ま
での加熱、冷却を５０回繰り返したが、このセルには何
の異常もみられなかった。つぎにこれに第２図に示した
ようにモリブデン電極を取り付けてＭＢＥ装置の分子線
源用セルとして用いてＧａＡｓの成膜を行なったところ
、得られた膜の電子移動度は８．３［１０［ｃｍ２／Ｖ
Ｓｅｃコと理論値に近いものであった。The PBN cell with the PBN coated SiC heater made in this manner was repeatedly heated to 1,000° C. and cooled 50 times in the same manner as in Example 1, but no abnormality was observed in this cell. Next, as shown in Fig. 2, a molybdenum electrode was attached to this and used as a molecular beam source cell of an MBE apparatus to form a GaAs film, and the electron mobility of the obtained film was 8.3[ 10 [cm2/V
Sec was close to the theoretical value.
これに対し、実施例１で得られた炭化けい素をコーティ
ングしただけのセルを用いてＭＢＥを行ないＧａＡｓの
膜を形成した場合の膜の電子移動度は６．８００ ［
ｃｍ２／Ｖ Ｓｅｃ ］で、これはＰＢＮをコーティン
グしたものに比べて劣るものであった。On the other hand, when a GaAs film is formed by MBE using the cell coated with silicon carbide obtained in Example 1, the electron mobility of the film is 6.800 [
cm2/V Sec], which was inferior to that coated with PBN.
比較例
実施例と同じように第２区に示した形状のつばをもった
２ ０ｍｍφＸ１１０ｍｍＪＺのＰＢＮセルを、セルの
内側にガスが接触しないようにマスキングして真空熱炉
中に設置し、１，７００℃に加熱してからこの炉中にメ
タンガスを１０ｍ１／分で流して熱分解させ、生成した
熱分解炭素をＰＢＮセルの表面に厚さ１１０Ａｔで蒸着
させ、この土に実施例と同様にＰＢＮ膜を厚さ５μｍで
蒸着させ、冷却後これを取り出して第２図に示したよう
にモリブデン電極を取りつけたところ、このものは約２
Ωの抵抗値を示した。Comparative Example As in the example, a 20 mm φ x 110 mm JZ PBN cell with a brim of the shape shown in Section 2 was masked to prevent gas from coming into contact with the inside of the cell and placed in a vacuum heat furnace. After heating to 700°C, methane gas was flowed into this furnace at a rate of 10 m1/min to cause thermal decomposition, and the generated pyrolytic carbon was evaporated to a thickness of 110 At on the surface of the PBN cell. A film was deposited to a thickness of 5 μm, and after cooling, it was taken out and a molybdenum electrode was attached as shown in Figure 2.
The resistance value in Ω is shown.
ついで、これを第３図に示したように真空容器内に設置
し、通電して加熱実験を行なったところ、このものも第
４図に示したような発熱を示したが、この熱分解炭素層
は繰り返し実験の６回目にＰＢＮ表面から剥離した。Next, this was placed in a vacuum container as shown in Figure 3, and a heating experiment was conducted by turning on electricity, which also showed heat generation as shown in Figure 4, but this pyrolyzed carbon The layer was peeled off from the PBN surface at the sixth repeat.
（発明の効果）
本発明はＰＢＮ治具に関するもので、これはＰＢＮ成形
体の表面に炭化けい素からなる導電性抵抗体膜を接合す
るか、またはその上にさらにＰＢＮ層を形成し、電力供
給により加熱し得るようにしてなることを特徴とするも
のであるが、この炭化けい素からなる導電性抵抗体膜に
電力を供給するとこの導電性抵抗体膜が発熱するのでこ
のものは加熱治具として有用なものとされるし、これは
この導電性抵抗体膜がＣＶＤ法などのような方法で工業
的に容易にかつ安価に形成させることができるし、この
導電性抵抗体膜は高温でも熱変形しないし、コンパクト
でかさばらず、耐ヒートサイクル性があり、高寿命であ
ることから、各種分野における加熱装置として有用とさ
れるという工業的有益性が付与されるし、このものは高
純度が要求される分野において特に有益性が発揮される
。(Effects of the Invention) The present invention relates to a PBN jig, in which a conductive resistor film made of silicon carbide is bonded to the surface of a PBN molded body, or a PBN layer is further formed thereon, and a PBN jig is used. The electrically conductive resistor film made of silicon carbide generates heat when electrical power is supplied to the electrically conductive resistor film, so this electrically conductive resistor film cannot be heated. This conductive resistor film can be formed industrially easily and inexpensively by methods such as CVD, and this conductive resistor film can be formed at high temperatures. However, it does not deform due to heat, is compact, is not bulky, has heat cycle resistance, and has a long lifespan, so it has industrial benefits such as being useful as a heating device in various fields. It is particularly useful in areas where purity is required.
第１図は実施例で使用されたＰＢＮ成形体の縦断面図、
第２図は第１図のＰＢＮ成形体に導電性抵抗体膜を形成
し、電極を取りつけた実施例で得られた本発明のＰ８Ｎ
治其の斜視図、第３図はこのＰＢＮ治具を装置した加熱
装置の縦断面図、第４図はこの加熱装置の供給電力と発
熱温度との関係グラフを示したものである。
１・・・ＰＢＮ治具 ２・・・真空容器・モリブデ
ン板
・放射温度計
□電力
（ｋｗ）FIG. 1 is a longitudinal cross-sectional view of the PBN molded body used in the examples.
Figure 2 shows the P8N of the present invention obtained in an example in which a conductive resistor film was formed on the PBN molded body of Figure 1 and electrodes were attached.
A perspective view of the jig, FIG. 3 is a vertical sectional view of a heating device equipped with this PBN jig, and FIG. 4 is a graph showing the relationship between the power supplied to this heating device and the heat generation temperature. 1... PBN jig 2... Vacuum container, molybdenum plate, radiation thermometer □ Power (kw)
Claims (3)
してなることを特徴とする熱分解窒化ほう素治具。1. A pyrolytic boron nitride jig characterized by laminating silicon carbide on the surface of a pyrolytic boron nitride molded body.
解窒化ほう素とを積層してなることを特徴とする加熱用
熱分解窒化ほう素治具。2. A pyrolytic boron nitride jig for heating, characterized by laminating silicon carbide and pyrolytic boron nitride on the surface of a pyrolytic boron nitride molded body.
プ状またはプレート状である請求項１または２に記載し
た加熱用熱分解窒化ほう素治具。3. The pyrolytic boron nitride jig for heating according to claim 1 or 2, wherein the pyrolytic boron nitride molded body is in the shape of a cell, a boat, a pipe, or a plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23040590A JPH04112478A (en) | 1990-08-31 | 1990-08-31 | Pyrolytic boron nitride jig |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23040590A JPH04112478A (en) | 1990-08-31 | 1990-08-31 | Pyrolytic boron nitride jig |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04112478A true JPH04112478A (en) | 1992-04-14 |
Family
ID=16907372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23040590A Pending JPH04112478A (en) | 1990-08-31 | 1990-08-31 | Pyrolytic boron nitride jig |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04112478A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5331134A (en) * | 1992-05-21 | 1994-07-19 | Shin-Etsu Chemical Co., Ltd. | Double-layered ceramic heater |
-
1990
- 1990-08-31 JP JP23040590A patent/JPH04112478A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5331134A (en) * | 1992-05-21 | 1994-07-19 | Shin-Etsu Chemical Co., Ltd. | Double-layered ceramic heater |
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