JPH04109760U - exposure equipment - Google Patents
exposure equipmentInfo
- Publication number
- JPH04109760U JPH04109760U JP1069691U JP1069691U JPH04109760U JP H04109760 U JPH04109760 U JP H04109760U JP 1069691 U JP1069691 U JP 1069691U JP 1069691 U JP1069691 U JP 1069691U JP H04109760 U JPH04109760 U JP H04109760U
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- JP
- Japan
- Prior art keywords
- substrate
- light
- exposure
- amount
- filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000758 substrate Substances 0.000 claims abstract description 66
- 230000005540 biological transmission Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Control Of Exposure In Printing And Copying (AREA)
Abstract
(57)【要約】
【目的】 曲面形状の基板を形状に応じて基板全面に一
定量の光量を照射できる露光装置とすること。
【構成】 曲面形状の露光表面をもつ基板が保持される
支持部と、光源と光源の光を平行光とするレンズとから
なる露出部と、該露出部と該支持部との間に設けられ該
露光表面の曲率に合わせて該平行光の透過量を調整する
フィルターとからなる露光装置。
(57) [Summary] [Purpose] To provide an exposure device that can irradiate a curved substrate with a constant amount of light over the entire surface of the substrate depending on the shape. [Structure] A supporting part that holds a substrate having a curved exposure surface, an exposed part consisting of a light source and a lens that converts the light from the light source into parallel light, and a support part provided between the exposed part and the supporting part. An exposure device comprising a filter that adjusts the amount of transmitted parallel light according to the curvature of the exposure surface.
Description
【０００１】0001
本考案は、液晶セルの基板など、特に曲面形状の基板に電極のパタニングを形 成するのに使用される露光装置に関する。 This invention enables electrode patterning to be applied to particularly curved substrates such as liquid crystal cell substrates. It relates to an exposure apparatus used to create an image.
【０００２】0002
従来、光源よりフォトマスクを通してフォトレジストの塗布されている基板面 に光を照射してその表面にフォトレジストの光硬化パターンを形成するための露 光装置がある。この露光装置はフォトレジスト全面に均一な露光をおこなわない と光硬化が充分に進行しない部分が残り、現像、エッチングにより形成される電 極パターンは絶縁が不十分となりショートや断線を起こしたりする。特に緻密な パターンを形成する場合は、基板面に均一な光量を照射するようにしないとフォ トマスクのパターンがフォトレジスト上に再現できないという不具合が発生する 。 Conventionally, the substrate surface where photoresist is coated through a photomask from a light source. exposure to form a photocured pattern of photoresist on its surface. There is a light device. This exposure device does not uniformly expose the entire surface of the photoresist. There remain areas where photocuring has not progressed sufficiently, and the electrodes formed by development and etching remain. The polar pattern has insufficient insulation, which can cause short circuits and disconnections. especially detailed When forming a pattern, it is necessary to irradiate the substrate surface with a uniform amount of light. A problem occurs in which the mask pattern cannot be reproduced on the photoresist. .
【０００３】 通常露光装置は、図７に示すように集光カバー４２と、集光カバー４２の中心 に配置された光源４１と、光源４１の光を基板４３の露光面に対して垂直光線と するレンズ４４とを備えたランプハウス４０とからなりランプハウス４０を上下 に昇降させる昇降機５１をもつ。基板４３支持部は、基板４３の露光面の上面側 に配置されるパターンマスク支持台４９と、基板４３を固定支持し、基板４３を 裏面から吸引して固定する吸引用管４６が設けられた定盤４５と定盤４５を支持 する支持台４７とから構成されている。なお、昇降機５１は支持台４７に係止さ れ、吸着用管４６は真空ポンプ４８に接続されている。この露光装置で平面状の 基板には均一な光量が全面に照射される。0003 As shown in FIG. 7, the normal exposure device includes a condenser cover 42 and a central A light source 41 is arranged at It consists of a lamp house 40 equipped with a lens 44 that moves the lamp house 40 up and down. It has an elevator 51 that raises and lowers the vehicle. The substrate 43 support section is located on the upper surface side of the exposed surface of the substrate 43. A pattern mask support stand 49 disposed on the substrate fixedly supports the substrate 43, and Supports a surface plate 45 and a surface plate 45 provided with a suction pipe 46 that is fixed by suction from the back side. It is composed of a support stand 47. Note that the elevator 51 is locked to the support base 47. The adsorption tube 46 is connected to a vacuum pump 48. With this exposure equipment, The entire surface of the substrate is irradiated with a uniform amount of light.
【０００４】 実開平１−１６０８２８号公報には、ウエハ基板の場合に均一な露光をするた めに、基板表面と平行な方向に走査する走査機構を設け、この走査機構により直 線状の光線をフォトレジストの塗布面の基板上を走査させて基板に対して直角方 向に保持しておこなう露光装置が開示されている。 しかし、基板が曲面状となると平面状のものと異なり図８に示すように、光線 は基板５０端部への照射は直角方向とならず、部位により単位面積当りの光線照 射量が異なり、フォトレジスト面に均一な露光量を照射することができなくなる 。また上記の露光装置で光源を走査させても光源は基板面上を平行に移動するの みで、曲面状の端部では直角方向から光線を照射することができない。0004 Japanese Utility Model Application No. 1-160828 discloses a method for uniform exposure in the case of wafer substrates. In order to A linear beam of light is scanned over the photoresist-coated surface of the substrate in a direction perpendicular to the substrate. An exposure apparatus is disclosed in which the exposure apparatus is held in the opposite direction. However, when the substrate is curved, unlike a flat substrate, the light rays In this case, the irradiation to the edge of the substrate 50 is not perpendicular, and the light irradiation per unit area varies depending on the part. The amount of radiation varies, making it impossible to irradiate the photoresist surface with a uniform amount of exposure. . Furthermore, even if the light source is scanned using the above exposure device, the light source will not move parallel to the substrate surface. Therefore, the curved end cannot be irradiated with light from a right angle direction.
【０００５】 このように従来の露光装置で曲面基板５０に対する露光方法では、照射光の単 位面積当たりの紫外線照射量が基板中心から遠ざかる程少なくなることは避けら れない。そして照射量が不足すると、フォトレジストの現像、エッチングをおこ なっても周辺部では所定の電極パターンが形成されておらず、端部の電極は充分 な絶縁ができずショートや断線がおきるという不具合が発生する。[0005] In this way, in the exposure method for the curved substrate 50 using the conventional exposure apparatus, the irradiation light is It is unavoidable that the amount of UV irradiation per surface area decreases as the distance from the center of the substrate increases. Not possible. If the irradiation amount is insufficient, the photoresist will be developed and etched. However, the prescribed electrode pattern is not formed at the periphery, and the electrodes at the edges are insufficient. This can lead to problems such as short circuits and disconnections due to insufficient insulation.
【０００６】 また、全体の露光量を弱くするとショートが多くなり、全体の露光量を強くす ると断線が多くなる。[0006] Also, if the overall exposure amount is made weaker, there will be more short circuits, and if the overall exposure amount is made stronger, there will be more short circuits. If this happens, there will be many disconnections.
【０００７】[0007]
本考案は、上記の事情に鑑みてなされたもので、曲面形状の基板の形状に応じ て基板全面に一定量の光量を照射でき、むらのないパターンが形成できる露光装 置とすることを目的とする。 The present invention was developed in view of the above circumstances, and is suitable for the shape of curved substrates. Exposure equipment that can irradiate a constant amount of light onto the entire surface of the substrate and form an even pattern. The purpose is to provide a
【０００８】[0008]
本考案の露光装置は、曲面形状の露光表面をもつ基板が保持される支持部と、 光源と光源の光を平行光とするレンズとからなる露光部と、該露光部と該支持 部との間に設けられ該露光表面の曲率に合わせて該平行光の透過量を調節するフ ィルターとからなることを特徴とする。 The exposure apparatus of the present invention includes a support portion for holding a substrate having a curved exposure surface; an exposure section consisting of a light source and a lens that converts the light from the light source into parallel light; the exposure section and the support; and a frame that adjusts the amount of transmission of the parallel light according to the curvature of the exposed surface. It is characterized by consisting of a filter.
【０００９】 この露光装置は支持部と露光部とから構成され、フォトマスクおよびフォトレ ジストの塗布された曲面形状の基板面に光を照射して、フォトリソ法により所定 の電極用のパターンを形成する装置である。 支持部は、基板を支持し光源との距離を一定に保持するように固定する。たと えば、真空の吸引管の開口を複数配置した定盤で基板を吸引して露光期間中基板 の位置を固定保持する。この支持部は基板の装着および脱着が可能なように移動 可能とすることが好ましい。[0009] This exposure device consists of a support section and an exposure section, and includes a photomask and a photoreceptor. Light is irradiated onto the curved substrate surface coated with the resist, and a predetermined shape is formed using photolithography. This is a device that forms patterns for electrodes. The support part supports the substrate and is fixed so as to maintain a constant distance from the light source. and For example, a surface plate with multiple openings of vacuum suction tubes is used to suck the substrate and remove it during the exposure period. Hold the position fixed. This support is movable so that boards can be inserted and removed. It is preferable to enable it.
【００１０】 露光部は、光源と光源の光を平行光とするレンズとから構成されている。そし てフィルターが露光部と基板との間に配置され、透過する光量を調整して曲面基 板の全面に照射される露光量を一定にする。 このフィルターは、ガラス、プラスチックなどの透明板に光線の透過量を変化 させる物質を部分的に厚みを変えて形成したものが用いられる。光線の透過量を 変化させる物質としては、たとえば、クロムその他金属、二酸化ケイ素、酸化チ タンなどの金属酸化物で可視光または紫外線を反射または吸収する材料が使用さ れる。上記の材料を透明板上に形成させるには、一般的な蒸着、スパッタリング 、イオンプレーティング、メッキ、イオン注入法などが利用でき透明板の材質お よび付着材料の特性から容易な方法を選択しておこなう。形成される付着材料の 膜厚は凡そ２００〜１０００Åである。0010 The exposure section includes a light source and a lens that converts light from the light source into parallel light. stop A filter is placed between the exposed area and the substrate, and adjusts the amount of transmitted light to illuminate the curved surface. The amount of exposure applied to the entire surface of the board is made constant. This filter changes the amount of light transmitted through transparent plates such as glass and plastic. A material formed by partially changing the thickness is used. The amount of light transmitted Substances to be changed include, for example, chromium and other metals, silicon dioxide, and titanium oxide. Materials that reflect or absorb visible or ultraviolet light are used, such as metal oxides such as tan. It will be done. To form the above materials on a transparent plate, general vapor deposition and sputtering methods are used. , ion plating, plating, ion implantation, etc. can be used to change the material of the transparent plate. Select an easy method based on the characteristics of the material and the material to be adhered. of the deposited material formed. The film thickness is approximately 200 to 1000 Å.
【００１１】 フィルターの光線透過量の制御は、基板面での露光量が一定になるようにマス ク材料を部分的に不均一に付着させておこなう。このフィルターは、たとえば、 蒸着されるフィルター基板の前方にスリットの開いたマスクを設け、フィルター 基板を左右に移動させながら蒸着をおこなうことによりフイルター基板面の中央 が厚く端部が薄くなるようにしたり、フイルター基板をマスクして蒸着などをお こなうことで、基板形状に応じて全面に均一な露光量の照射ができるフィルター とすることができる。[0011] The amount of light transmitted through the filter is controlled by massaging it so that the amount of exposure on the substrate surface is constant. This is done by applying the material unevenly locally. This filter is for example A mask with slits is provided in front of the filter substrate to be deposited, and the filter By performing evaporation while moving the substrate from side to side, the center of the filter substrate surface is It is recommended to make the filter substrate thicker and thinner at the edges, or mask the filter substrate for vapor deposition. By doing this, the filter can irradiate the entire surface with a uniform amount of light depending on the shape of the substrate. It can be done.
【００１２】 この光源からの光線は、レンズを経てフィルターを透過することにより部位に よる透過量が調整され基板面に達する光量を基板上の位置に係わらず一定にする ことができる。したがって、基板全面に均一に一定露光量で光が照射ができる。 このため均一なパターンがフォトレジスト上に露光することができる。そして現 像、エッチングなどを経て形成された電極パターンは断線、ショートのないもの とすることができる。0012 The light from this light source passes through a lens and a filter to reach the area. The amount of light transmitted through the substrate is adjusted so that the amount of light reaching the substrate surface remains constant regardless of its position on the substrate. be able to. Therefore, the entire surface of the substrate can be uniformly irradiated with light at a constant exposure amount. This allows a uniform pattern to be exposed onto the photoresist. And now Electrode patterns formed through imaging, etching, etc. are free from disconnections and short circuits. It can be done.
【００１３】[0013]
この露光装置は、曲面形状の露光表面をもつ基板が支持部で保持され、光源と 光源の光を平行光とするレンズとからなる露光部と、該露光部と該支持部との間 に設けられ該露光表面の曲率に合わせて該平行光の透過量を調節してできるフィ ルターとからなる。 In this exposure device, a substrate with a curved exposure surface is held by a support, and a light source and An exposed part consisting of a lens that converts light from a light source into parallel light, and between the exposed part and the support part. The filter is formed by adjusting the amount of transmission of the parallel light according to the curvature of the exposed surface. It consists of Luther.
【００１４】 このため光源からの光は、フィルターを透過することで光の透過量が部分的に 調整され曲面をもつ基板に対し垂直光となる部分は反射・吸収されて弱くなり周 囲の基板に対して垂直光として照射されない部分は吸収量が少なく露光量が多く なる。このため曲面状の基板であっても端部と中央とが単位面積当りで均一な露 光量で照射できる。したがって、基板上に所望の電極パターンがフォトリソ法で むらなく形成できる。[0014] Therefore, when the light from the light source passes through the filter, the amount of light transmitted is partially reduced. The part of the light that is adjusted and perpendicular to the curved substrate is reflected and absorbed, becoming weaker and surrounding the curved surface. The parts of the surrounding substrate that are not irradiated with vertical light have a low amount of absorption and a high amount of exposure. Become. Therefore, even if the board is curved, the edges and center will have uniform exposure per unit area. Can be irradiated with light intensity. Therefore, the desired electrode pattern can be formed on the substrate by photolithography. Can be formed evenly.
【００１５】 この露光装置では、基板の露光面全体に均一な光量で照射されるので、電極用 のパターンが複雑なパターンであっても曲面形状の基板上に正確に形成すること ができ、露光むらの発生が防止できる。さらにフィルターのマスク材の厚みを適 宜変更することにより曲面形状の変更にも対応することができる。[0015] This exposure device irradiates the entire exposed surface of the substrate with a uniform amount of light, so it Accurately form even complex patterns on curved substrates It is possible to prevent uneven exposure from occurring. Furthermore, adjust the thickness of the filter mask material. By making appropriate changes, it is possible to accommodate changes in the shape of the curved surface.
【００１６】[0016]
以下、実施例により具体的に説明する。 （実施例１） この露光装置は露光部と支持部とから構成され、フォトマスクおよびフォトレ ジストの塗布された基板面に光を照射して、フォトリソ法により曲面形状の基板 表面に所定の電極用のパターンを形成する装置である。 Hereinafter, this will be explained in detail using examples. (Example 1) This exposure device consists of an exposure section and a support section, and includes a photomask and a photoreceptor. Light is irradiated onto the surface of the substrate coated with resist, and a curved substrate is created using photolithography. This is a device that forms a predetermined electrode pattern on the surface.
【００１７】 図１にこの露光装置の概略説明図を示す。 この露光部は集光カバー２と、集光カバー２の中心に配置された光源１と、光 源１の光を定盤５に対して垂直光線とするレンズ４とを備えたランプハウス６と からなりランプハウス６を上下に昇降させる昇降機１１をもつ。支持部は、基板 ３を固定支持し、基板３を裏面から吸引して固定する吸引用管８が設けられた定 盤５と、定盤５を支持する支持台９とから構成されている。なお、昇降機１１は 支持台９に係止され、吸着用管８は真空ポンプ（図示せず）に接続されている。 そして基板３とランプハウス６との間にフィルター１０が配置され昇降機１１に 係止されている。そして露光量は光源の出力および照射時間により調整する。[0017] FIG. 1 shows a schematic explanatory diagram of this exposure apparatus. This exposure section includes a light collecting cover 2, a light source 1 placed in the center of the light collecting cover 2, and a light a lamp house 6 comprising a lens 4 that makes the light from the source 1 a perpendicular beam to the surface plate 5; It has an elevator 11 that raises and lowers the lamp house 6. The support part is the substrate 3, and is provided with a suction tube 8 that suctions and fixes the substrate 3 from the back side. It is composed of a platen 5 and a support stand 9 that supports the surface plate 5. In addition, the elevator 11 is The suction tube 8 is fixed to the support stand 9 and connected to a vacuum pump (not shown). A filter 10 is arranged between the substrate 3 and the lamp house 6, and the filter 10 is installed in the elevator 11. It is locked. The exposure amount is adjusted by the output of the light source and the irradiation time.
【００１８】 基板３は、曲率１８０Ｒ、円弧３００ｍｍの２次円筒面形状のガラス基板３で 、図２のａに示すように表面にＩＴＯ膜１２が形成されその上面にはレジスト１ ６が塗布されその上には図４に示すようなパターンマスク（フォトマスク）１３ が配置されている。 フィルター１０は、フィルター用のガラス基板と蒸着材料（クロム）との間に 中央部に約１〜３ｍｍ幅のスリットを設けた保護マスクを配備して、蒸着中にガ ラス板を左右に移動させて膜厚を制御し透過光線調整膜１４を蒸着させた。得ら れたフィルター１０は図２のｂように紫外線遮蔽材料が端部は少なく中央部は厚 く付着している。このフィルターの紫外線透過量を調べたのが図３で端部を１０ ０としたとき中央部は６１である。[0018] The substrate 3 is a glass substrate 3 having a secondary cylindrical surface shape with a curvature of 180R and an arc of 300mm. As shown in FIG. 2A, an ITO film 12 is formed on the surface and a resist 1 is formed on the top surface. 6 is applied, and a pattern mask (photomask) 13 as shown in FIG. is located. The filter 10 is formed between a filter glass substrate and a vapor deposition material (chromium). A protective mask with a slit approximately 1 to 3 mm wide in the center is provided to prevent gas from forming during vapor deposition. The transmitted light adjustment film 14 was deposited by moving the lath plate from side to side to control the film thickness. Obtained As shown in Fig. 2b, the filter 10 is thinner at the edges and thicker at the center. It is very attached. Figure 3 shows the amount of ultraviolet light transmitted through this filter. When it is set to 0, the center part is 61.
【００１９】 この紫外線遮蔽用のフィルター１０を図２に示すような基板３とフィルター１ ０の位置関係に配置して、光源の露光量を出力を変えて２０〜１１０（ｍＪ／ｃ ｍ2 ）の範囲で図４の電極パターン１３をフォトリソ法で基板上に形成した。 この時のレジスト１６には東京応化製のＰＭＥＲ−３０４０を用いその膜厚は １．５μｍ、ＩＴＯ１２の膜厚みは４００〜５００Åとした。The ultraviolet shielding filter 10 is arranged in the positional relationship between the substrate 3 and the filter 10 as shown in FIG. 2, and the exposure amount of the light source is varied from 20 to 110 (mJ/cm 2 ). The electrode pattern 13 shown in FIG. 4 was formed on the substrate by photolithography within the range shown in FIG. At this time, PMER-3040 manufactured by Tokyo Ohka Co., Ltd. was used as the resist 16, and its film thickness was 1.5 μm, and the film thickness of the ITO 12 was 400 to 500 Å.
【００２０】 露光後現像、エッチング処理をおこない電極パターンの評価をおこなった。結 果を表１に示す。なお、ショート、断線の評価は１枚あたり３０点測定した結果 である。 露光量が少ない２０（ｍＪ／ｃｍ2 ）の時は現像後のパタンの形成が不十分で 測定箇所すべてでショートがおきているが、露光量が強くなるにつれてショート も少なくなり７０以上であれば良好なパターンが形成できる。なお、露光量が１ １０と強くなりすぎると断線が発生する場合があるので、露光量は７０〜１００ （ｍＪ／ｃｍ2 ）の範囲が好ましい。After exposure, development and etching were performed, and the electrode pattern was evaluated. The results are shown in Table 1. Note that the evaluation of short circuits and disconnections is based on the results of measurement at 30 points per sheet. When the exposure amount is 20 (mJ/cm 2 ), the pattern formation after development is insufficient and short circuits occur at all measurement points, but as the exposure amount increases, the short circuits decrease, and if it is 70 or more, A good pattern can be formed. Note that if the exposure amount is too strong as 110, wire breakage may occur, so the exposure amount is preferably in the range of 70 to 100 (mJ/cm 2 ).
【００２１】[0021]
【表１】 [Table 1]
【００２２】 （比較例１） この場合は実施例１と同じ形状の基板３を用いてフィルター１０を使用しない で露光した場合である。露光した基板を実施例１と同様に処理してその電極パタ ーンを評価した。結果を表１に示す。この場合はいずれの露光量においてもショ ート、断線がおきていた。[0022] (Comparative example 1) In this case, the substrate 3 having the same shape as in Example 1 is used and the filter 10 is not used. This is the case when exposed to light. The exposed substrate was processed in the same manner as in Example 1, and its electrode pattern was evaluated the performance. The results are shown in Table 1. In this case, at any exposure amount, the There was a break in the wire.
【００２３】 すなわち、露光量を少なくするとショートが多くなり、露光量を強くすると逆 に断線が多くおきる。したがって、露光量の調整では所定のパターンを形成する ことはできない。 （実施例２） 図５に示す端部が４５°上方に傾斜し各辺が１００ｍｍの形状の基板１５上に 実施例１と同じ電極パターンを形成するために、フィルター１０として図５ｂに 示す様に中央部に透過光線調整膜１４を形成した。すなわち、端部をマスクして クロムを中央部のみに蒸着した。[0023] In other words, decreasing the exposure amount will increase the number of short circuits, while increasing the exposure amount will have the opposite effect. Many disconnections occur. Therefore, when adjusting the exposure amount, it is necessary to form a predetermined pattern. It is not possible. (Example 2) The end portion shown in FIG. 5 is inclined upward at 45 degrees and each side is 100 mm. In order to form the same electrode pattern as in Example 1, the filter 10 shown in FIG. As shown, a transmitted light adjustment film 14 was formed in the center. i.e. by masking the edges Chromium was deposited only in the center.
【００２４】 得られたフィルターの光線透過量を測定した結果を図６に示す。端部の透過光 量を１００としたとき中央部は７０の透過量を示した。 実施例１と同様に処理して電極パターンの断線、ショート状況を調べた。結果 を表１に示す。 この場合露光量が５０〜１００（ｍＪ／ｃｍ2 ）の間であれば良好なパターン が形成できる。 （比較例２） 実施例２と同じ形状の基板１５を用いてフィルター無しで露光をおこなった。 その後の電極パターンの状態の評価結果を表１に示す。露光量を変え強くすると ショートはないが断線が多くなり、露光量が少なくなると断線は無くなるがショ ートが多くなる。FIG. 6 shows the results of measuring the amount of light transmitted through the obtained filter. When the amount of transmitted light at the ends was 100, the amount of transmitted light at the center was 70. The electrode pattern was processed in the same manner as in Example 1 to check for disconnections and short circuits. The results are shown in Table 1. In this case, if the exposure amount is between 50 and 100 (mJ/cm 2 ), a good pattern can be formed. (Comparative Example 2) Exposure was performed using a substrate 15 having the same shape as in Example 2 without using a filter. Table 1 shows the evaluation results of the state of the electrode pattern after that. If the exposure amount is changed and made stronger, there will be no short circuits, but there will be more disconnections, and if the exposure amount is decreased, there will be no disconnections, but there will be more short circuits.
【００２５】 したがって、実施例のフィルターを使用することによりショートと断線のない 電極パタンをフォトリソ法で形成することができる。 また、基板の形状が変わった場合は、フィルターの光透過調整材料の付着状態 を適宜変更することで容易に制御することができる。[0025] Therefore, by using the filter of the example, there will be no short circuit or disconnection. The electrode pattern can be formed by photolithography. Also, if the shape of the substrate has changed, check the adhesion condition of the filter's light transmission adjustment material. can be easily controlled by appropriately changing.
【００２６】[0026]
この露光装置により曲面基板の全面にわたって均一な光の露光が可能となる。 そのため曲面形状の基板であっても現像、エッチング処理後、ショートや断線の ない良好な電極パターンが形成できる。 さらに、露光量の許容範囲が拡大し工程管理を容易に行うことができる。 This exposure device enables uniform light exposure over the entire surface of the curved substrate. Therefore, even with curved substrates, short circuits and disconnections may occur after development and etching. A good electrode pattern can be formed. Furthermore, the allowable range of exposure amount is expanded, and process control can be easily performed.
【図１】 実施例１の露光装置の概略説明図である。FIG. 1 is a schematic explanatory diagram of an exposure apparatus of Example 1.
【図２】 実施例１の基板ａとフィルターｂの位置関係
を示す断面模式図である。FIG. 2 is a schematic cross-sectional view showing the positional relationship between substrate a and filter b in Example 1.
【図３】 図２ｂのフィルターの光透過量のグラフであ
る。3 is a graph of the amount of light transmission of the filter of FIG. 2b; FIG.
【図４】 実施例１で使用した電極パターン図である。FIG. 4 is a diagram of an electrode pattern used in Example 1.
【図５】 実施例２の基板ａとフィルターｂとの位置関
係を示す断面模式図である。5 is a schematic cross-sectional view showing the positional relationship between substrate a and filter b in Example 2. FIG.
【図６】 図５のフィルターｂの光透過量のグラフであ
る。6 is a graph of the amount of light transmitted through filter b in FIG. 5. FIG.
【図７】 従来の露光装置の説明模式図である。FIG. 7 is an explanatory schematic diagram of a conventional exposure apparatus.
【図８】 従来の露光装置に曲面基板を配置した場合の
要部説明図である。FIG. 8 is an explanatory diagram of main parts when a curved substrate is arranged in a conventional exposure apparatus.
１ 光源、 ３、１５ 基板、 ４ レンズ、 ５ 定
盤、１０ フィルター、１２ ＩＴＯ膜、１３ パター
ンマスク（フォトマスク）、 １４ 透過光線調整膜、
１６ レジスト、1 light source, 3, 15 substrate, 4 lens, 5 surface plate, 10 filter, 12 ITO film, 13 pattern mask (photomask), 14 transmitted light adjustment film,
16 resist,
Claims (1)
れる支持部と、光源と光源の光を平行光とするレンズと
からなる露光部と、該露光部と該支持部との間に設けら
れ該露光表面の曲率に合わせて該平行光の透過量を調節
するフィルターとからなることを特徴とする露光装置。1. A support part for holding a substrate having a curved exposure surface, an exposure part comprising a light source and a lens that converts light from the light source into parallel light, and between the exposure part and the support part. An exposure apparatus comprising: a filter that is provided and adjusts the amount of transmission of the parallel light according to the curvature of the exposure surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1069691U JPH04109760U (en) | 1991-03-01 | 1991-03-01 | exposure equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1069691U JPH04109760U (en) | 1991-03-01 | 1991-03-01 | exposure equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04109760U true JPH04109760U (en) | 1992-09-22 |
Family
ID=31900418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1069691U Pending JPH04109760U (en) | 1991-03-01 | 1991-03-01 | exposure equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04109760U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102033434A (en) * | 2009-09-29 | 2011-04-27 | Nec液晶技术株式会社 | Optical element manufacturing method, optical element exposure device, optical element, lighting optical device, display device, and electronic apparatus |
| JP6033477B1 (en) * | 2016-01-06 | 2016-11-30 | テクノアルファ株式会社 | Method for manufacturing curved body having pattern formed with photoresist and exposure apparatus |
-
1991
- 1991-03-01 JP JP1069691U patent/JPH04109760U/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102033434A (en) * | 2009-09-29 | 2011-04-27 | Nec液晶技术株式会社 | Optical element manufacturing method, optical element exposure device, optical element, lighting optical device, display device, and electronic apparatus |
| JP6033477B1 (en) * | 2016-01-06 | 2016-11-30 | テクノアルファ株式会社 | Method for manufacturing curved body having pattern formed with photoresist and exposure apparatus |
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