JPH04109510A - Anisotropic conductive film and manufacture thereof - Google Patents
Anisotropic conductive film and manufacture thereofInfo
- Publication number
- JPH04109510A JPH04109510A JP22882090A JP22882090A JPH04109510A JP H04109510 A JPH04109510 A JP H04109510A JP 22882090 A JP22882090 A JP 22882090A JP 22882090 A JP22882090 A JP 22882090A JP H04109510 A JPH04109510 A JP H04109510A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polymer film
- anisotropic conductive
- conductor
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 81
- 239000002184 metal Substances 0.000 claims abstract description 81
- 239000004020 conductor Substances 0.000 claims abstract description 69
- 230000000149 penetrating effect Effects 0.000 claims abstract description 3
- 239000002120 nanofilm Substances 0.000 claims abstract 5
- 229920006254 polymer film Polymers 0.000 claims description 75
- 238000000034 method Methods 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 30
- 238000005323 electroforming Methods 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 7
- 238000005553 drilling Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 20
- 239000000758 substrate Substances 0.000 abstract description 19
- 230000008901 benefit Effects 0.000 abstract description 6
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 117
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 25
- 239000002245 particle Substances 0.000 description 22
- 239000000243 solution Substances 0.000 description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 20
- 239000002253 acid Substances 0.000 description 17
- 239000000853 adhesive Substances 0.000 description 16
- 230000001070 adhesive effect Effects 0.000 description 16
- 229910052759 nickel Inorganic materials 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 238000007747 plating Methods 0.000 description 12
- 239000011889 copper foil Substances 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 239000004831 Hot glue Substances 0.000 description 7
- 239000012670 alkaline solution Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000004962 Polyamide-imide Substances 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 229920002492 poly(sulfone) Polymers 0.000 description 3
- 229920002312 polyamide-imide Polymers 0.000 description 3
- 229920006289 polycarbonate film Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910001510 metal chloride Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- PXLIDIMHPNPGMH-UHFFFAOYSA-N sodium chromate Chemical compound [Na+].[Na+].[O-][Cr]([O-])(=O)=O PXLIDIMHPNPGMH-UHFFFAOYSA-N 0.000 description 2
- 235000011121 sodium hydroxide Nutrition 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229920000468 styrene butadiene styrene block copolymer Polymers 0.000 description 2
- 150000003505 terpenes Chemical class 0.000 description 2
- 235000007586 terpenes Nutrition 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- KGWYICAEPBCRBL-UHFFFAOYSA-N 1h-indene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)C=CC2=C1 KGWYICAEPBCRBL-UHFFFAOYSA-N 0.000 description 1
- UHKPXKGJFOKCGG-UHFFFAOYSA-N 2-methylprop-1-ene;styrene Chemical compound CC(C)=C.C=CC1=CC=CC=C1.C=CC1=CC=CC=C1 UHKPXKGJFOKCGG-UHFFFAOYSA-N 0.000 description 1
- WSSSPWUEQFSQQG-UHFFFAOYSA-N 4-methyl-1-pentene Chemical compound CC(C)CC=C WSSSPWUEQFSQQG-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 241000251468 Actinopterygii Species 0.000 description 1
- 241000270281 Coluber constrictor Species 0.000 description 1
- 229920001634 Copolyester Polymers 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- JHWNWJKBPDFINM-UHFFFAOYSA-N Laurolactam Chemical compound O=C1CCCCCCCCCCCN1 JHWNWJKBPDFINM-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229920000571 Nylon 11 Polymers 0.000 description 1
- 229920000299 Nylon 12 Polymers 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910001919 chlorite Inorganic materials 0.000 description 1
- 229910052619 chlorite group Inorganic materials 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- ZQLBQWDYEGOYSW-UHFFFAOYSA-L copper;disulfamate Chemical compound [Cu+2].NS([O-])(=O)=O.NS([O-])(=O)=O ZQLBQWDYEGOYSW-UHFFFAOYSA-L 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- CCGKOQOJPYTBIH-UHFFFAOYSA-N ethenone Chemical compound C=C=O CCGKOQOJPYTBIH-UHFFFAOYSA-N 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 229920006244 ethylene-ethyl acrylate Polymers 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- OQZCSNDVOWYALR-UHFFFAOYSA-N flurochloridone Chemical compound FC(F)(F)C1=CC=CC(N2C(C(Cl)C(CCl)C2)=O)=C1 OQZCSNDVOWYALR-UHFFFAOYSA-N 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004849 latent hardener Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 1
- LQNUZADURLCDLV-IDEBNGHGSA-N nitrobenzene Chemical group [O-][N+](=O)[13C]1=[13CH][13CH]=[13CH][13CH]=[13CH]1 LQNUZADURLCDLV-IDEBNGHGSA-N 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 229910052979 sodium sulfide Inorganic materials 0.000 description 1
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229920006132 styrene block copolymer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/22—Contacts for co-operating by abutting
- H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
- H01R13/2464—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the contact point
- H01R13/2471—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the contact point pin shaped
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/70—Coupling devices
- H01R12/71—Coupling devices for rigid printing circuits or like structures
- H01R12/712—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit
- H01R12/714—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit with contacts abutting directly the printed circuit; Button contacts therefore provided on the printed circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は異方導電体、特には液晶デイスプレィパネルの
ガラス基板とその駆動回路であるフレキシブルプリント
基板またはこのプリント基板上にＩＣ’ｒ搭載したフィ
ルムキャリアとの接続さらにはＩＣを直接搭載するチッ
プオングラス接続などに使用される異方導電膜およびそ
の製造方法に関するものである。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an anisotropic conductor, particularly a glass substrate of a liquid crystal display panel and a flexible printed circuit board which is a driving circuit thereof, or an IC'r mounted on this printed circuit board. The present invention relates to an anisotropic conductive film used for connection with a film carrier, as well as for chip-on-glass connection on which an IC is directly mounted, and a method for manufacturing the same.
［従来の技術］
卓上電子計算機や時計の表示機器として使用されている
液晶デイスプレィパネル（以下ＬＣＤと略記する）のガ
ラス基板と、その駆動回路であるフレキシブルプリント
基板（以下ＦＰＣと略記する）との電気的接続は従来導
電ゴムコネクタで行なわれていたが、０．４ｍｍ以上で
あったガラス基板とＦＰＣとの接続ピッチが最近はＬＣ
Ｄにおける大型化のために表示画素数が増加して０．３
ｍｍ以下となってぎたことから、この電気的接続につい
ては熱溶融性の接着剤中に導電粒子を均一に分散させた
分散型の異方導電膜を使用するのか主流になってきてお
り、この異方導電膜としては例えはスチレン−ブタジェ
ン−スチレンブロック共重合体などの熱可塑性樹脂に粘
着付与剤、老化防止剤、ｒＪ存在硬化剤などを添加して
なる熱溶融接着剤中に、直径が１０〜３０７７ｍでほぼ
球状の金属メツキ樹脂粒子やハンダ粒子を均一に分散さ
せたものを離型フィルム上に厚さ２０〜３０ｕｍに成膜
したのち、幅２〜３ｒａｍのリボン状としたものが汎用
されており、このものは使用時に前型フィルムから剥離
し、１３０〜１９０℃、１０〜２０秒という条件でヒー
トシールするという方法で使用されている。[Prior Art] The glass substrate of a liquid crystal display panel (hereinafter abbreviated as LCD) used as a display device for desktop electronic computers and watches, and the flexible printed circuit board (hereinafter abbreviated as FPC) that is the driving circuit thereof. Conventionally, electrical connections were made with conductive rubber connectors, but recently the connection pitch between the glass substrate and FPC, which used to be 0.4 mm or more, has been changed to LC.
The number of display pixels increases by 0.3 due to the increase in size in D.
mm or less, the mainstream for this electrical connection is to use a dispersed anisotropic conductive film in which conductive particles are uniformly dispersed in a heat-melting adhesive. An example of an anisotropic conductive film is a hot-melt adhesive made of a thermoplastic resin such as a styrene-butadiene-styrene block copolymer, to which a tackifier, an anti-aging agent, an rJ-based curing agent, etc. are added. It is commonly used to form a ribbon-like film with a width of 2 to 3 ram after forming a film with a thickness of 20 to 30 um on a release film, in which nearly spherical metal plating resin particles and solder particles are uniformly dispersed. When used, this product is peeled off from the previous film and heat-sealed at 130 to 190°C for 10 to 20 seconds.
［発明が解決しようとする課題コ
しかし、従来公知の熱溶融性接着剤中に導電粒子を分散
させた異方導電膜には１）導電粒子の分散状態が任意と
されているために、被接続電極が低ピツチの場合には第
４図ａ）に示したように数個の導電粒子の二次凝集塊に
よって隣接電極間でのリーク不良が発生すると共に、第
４図ｂ）に示したようにこれら導電粒子が接続時のヒー
トシールにおいて熱溶融接着剤の流動に伴なうヒートシ
ール部周囲の流動した接着剤のたまり部で、導電粒子の
連鎖が形成されて隣接電極間でリーク不良が発生するお
それがあり、 ２）導電粒子の粒子が均一でないと、第
４図Ｃ）に示したように大きな粒子の電極間では良好な
接続抵抗が得られるが、小さい粒子の電極間では大きな
粒子がこの接続を妨害するためにその接続抵抗が著しく
高くなったり、導通不良が生ずる、３）隣接電極間での
リーク不良を無くすために、接着剤中に配合する導電粒
子の配合量を減少させると、対向電極間に粒子が存在し
なくなるために導通不良が生ずる、という欠点があり、
このものの接続可能な前記したＬＣＤのガラス基板とＦ
ＰＣとの接続ピッチは０ 、２ｍｍＤが限界であり、こ
れが今後のカラー化などに伴なうＬＣＤパネルにおける
画素数の増加によりて０，２ｍｍ以下になるとされてい
ることから、これに対応することができないという不利
がある。[Problems to be Solved by the Invention] However, in the conventional anisotropic conductive film in which conductive particles are dispersed in a heat-melting adhesive, 1) the dispersion state of the conductive particles is arbitrary; When the connected electrodes have a low pitch, leakage defects occur between adjacent electrodes due to secondary agglomerates of several conductive particles as shown in Figure 4a), and leakage defects occur between adjacent electrodes as shown in Figure 4b). As these conductive particles flow during heat sealing during connection, a chain of conductive particles is formed in the pool of flowing adhesive around the heat sealing part, resulting in leakage defects between adjacent electrodes. 2) If the particles of conductive particles are not uniform, good connection resistance can be obtained between electrodes with large particles, as shown in Figure 4C), but a large connection resistance can be obtained between electrodes with small particles. Particles interfere with this connection, resulting in significantly high connection resistance and poor conductivity. 3) In order to eliminate leakage defects between adjacent electrodes, reduce the amount of conductive particles mixed in the adhesive. This has the disadvantage that there are no particles between the opposing electrodes, resulting in poor conductivity.
This product can be connected to the above-mentioned LCD glass substrate and F.
The maximum connection pitch with a PC is 0.2 mmD, and this is expected to be reduced to 0.2 mm or less due to an increase in the number of pixels in LCD panels due to colorization in the future, so it is necessary to respond to this. The disadvantage is that it cannot be done.
［課題を解決するための手段］
本発明はこのような不利を解決することのできる異方導
電膜およびその製造方法に関するものであり、これは電
気絶縁性の高分子フィルムに、該フィルムを貫通し、そ
の上下面に突出するリベット状の金属導電体を点状に配
置してなる異方導電膜、および１）電気絶縁性の高分子
フィルムを金属支持体上に形成する工程、 ２）該高分
子フィルムに所定のパターニングで穴明は加工する工程
、３）該穴明は加工された高分子フィルム側から金属支
持体をエツチングする工程、４）該エツチング後にリベ
ット状の金属導電体を電鋳法によって該高分子フィルム
の穴部に形成する工程、５）リベット状金属導電体を充
填した該高分子フィルムを金属支持体から剥離する工程
からなることを特徴とする異方導電膜の製法を要旨とす
るものである。[Means for Solving the Problems] The present invention relates to an anisotropic conductive film and a method for producing the same that can solve these disadvantages. and an anisotropic conductive film in which rivet-like metal conductors protruding from the upper and lower surfaces are arranged in dots, and 1) a step of forming an electrically insulating polymer film on a metal support; 3) The holes are formed by etching the metal support from the side of the processed polymer film; 4) After the etching, the rivet-shaped metal conductor is A method for producing an anisotropically conductive film comprising the steps of: forming holes in the polymer film by a casting method; and 5) peeling the polymer film filled with rivet-like metal conductors from a metal support. The main points are as follows.
すなわち、本発明者らは従来公知の熱溶融性接着剤中に
導電粒子を分散させた異方導電膜の不利を解決した異方
導電膜を開発すべく種々検討した結果、この異方導電膜
として電気絶縁性の高分子フィルムにこれを貫通し、そ
の上下面に突出したリベット状の金属導電体を点状に配
置したものとし、これをＬＣＤのガラス基板とＦＰＣや
ＩＣチップの間に配置すれば、このガラス基板とＦＰＣ
およびＩＣチップは高分子フィルムの上下面に突出して
いる金属導電体によって確実に接続されることを見出す
と共に、この異方導電膜の製造については電気絶縁性の
高分子フィルムを金属支持体上に形成し、このフィルム
に所定のパターニングで穴明けし、この穴明は部下力の
金属支持体をエツチングして孔部を設け、ここに金属導
電体を形成し、ついでこれを金属支持体から剥離すれば
よいということを確認し、この具体的製造方法について
の研究を行なって本発明を完成させた。That is, the present inventors have conducted various studies to develop an anisotropic conductive film that solves the disadvantages of conventionally known anisotropic conductive films in which conductive particles are dispersed in a hot melt adhesive. An electrically insulating polymer film is penetrated through it, and rivet-like metal conductors are placed in dots that protrude on the top and bottom surfaces of the film, and these are placed between the LCD glass substrate and the FPC or IC chip. Then, this glass substrate and FPC
It was also discovered that IC chips are reliably connected by metal conductors protruding from the upper and lower surfaces of a polymer film, and that an electrically insulating polymer film is placed on a metal support to produce this anisotropic conductive film. This film is formed with holes in a predetermined pattern, the holes are formed by etching the underlying metal support, a metal conductor is formed in the holes, and then this is peeled off from the metal support. After confirming that it was sufficient to do so, the present invention was completed by conducting research on this specific manufacturing method.
以下にこれをさらに詳述する。This will be explained in further detail below.
［作用］
本発明はＬＣＤのガラス基板とＦＰＣまたはＩＣとの電
気的接続などに有用とされる新規な異方導電膜およびそ
の製造方法に関するものである。[Function] The present invention relates to a novel anisotropic conductive film useful for electrical connection between a glass substrate of an LCD and an FPC or an IC, and a method for manufacturing the same.
本発明の異方導電膜は電気絶縁性の高分子フィルムに、
該フィルムを貫通し、その上下面に突出するリベット状
の金属導電体を点状に配置してなるものとされる。The anisotropic conductive film of the present invention is an electrically insulating polymer film.
Rivet-shaped metal conductors penetrating the film and protruding from its upper and lower surfaces are arranged in dots.
Ｓ１図ａ）はこの異方導電膜の斜視図を示したものであ
り、このものは図示のように電気絶縁性の高分子フィル
ムの表面に金属導電体が点状に突出配置されたものであ
るが、この金属導電体は第１図ｂ）の縦断面図に示しで
あるように電気絶縁性の高分子フィルムを貫通し、その
上下面に突出するように配置されている。Figure S1a) shows a perspective view of this anisotropic conductive film, in which metal conductors are arranged protrudingly in dots on the surface of an electrically insulating polymer film, as shown in the figure. However, as shown in the longitudinal cross-sectional view of FIG. 1b), this metal conductor is arranged so as to penetrate the electrically insulating polymer film and protrude from its upper and lower surfaces.
本発明の異方導電体はこれをＬＣＤのガラス基板とＦＰ
ＣまたはＩＣの間に配置すると、ガラス基板とＦＰＣま
たはＩＣとはこの高分子フィルムによって絶縁性に保た
れるが、この異方導電体には金属導電体が突出している
ので接続されるガラス基板の電極とＦＰＣおよびＩＣの
電極はこの金属導電体との接触によって確実に電気的接
続がされるし、その他の電極との絶縁性は確実に確保さ
れ、この金属導電体の間隔や配置位置はパターニングに
よってどのようにも設定できるという有利性が与えられ
る。The anisotropic conductor of the present invention can be used for LCD glass substrates and FPs.
When placed between the FPC or IC, the glass substrate and the FPC or IC are kept insulated by this polymer film, but since a metal conductor protrudes from this anisotropic conductor, it is difficult to connect the glass substrate to the FPC or IC. The electrodes of FPC and IC are reliably electrically connected through contact with this metal conductor, and insulation with other electrodes is ensured, and the spacing and placement of this metal conductor is Patterning offers the advantage of being configurable in any way.
本発明の異方導電体を構成する電気絶縁性の高分子フィ
ルムとしては、このものが後記するように金属支持体に
支持され、剥離されるものであることか・らフィルムと
して取扱うことのできる十分な強度と靭性をもつものと
することが必要とされるし、エツチングや電鋳の加工浴
に侵されることが無いことが必要であり、該異方導電膜
の上下面に熱熔融接着剤を形成した異方導電膜とした場
合においては、ヒートシール時においては高温でも熱変
形しないことが要求されることから、これら高分子フィ
ルムとしてはポリイミドフィルム、ポリアミドイミドフ
ィルム、ポリカーボネートフィルム、ポリエステルフィ
ルム、ポリエーテルイミドフィルム、ボリアリレートフ
ィルム、ポリフェニレンオキサイドフィルム、ポリフェ
ニレンサルファイドフィルム、ポリスルホンフィルム、
ポリ−４−メチルペンテンフィルム、ポリパラバン酸フ
ィルム、ポリエーテルスルホンフィルム、ポリエーテル
エーテルケトンフィルムなどが例示され、さらには後記
するように該高分子フィルムにホトレジストを用い、ア
ルカリや溶剤等によって穴明は加工する場合においては
、アルカリ溶解性や有機溶剤溶解性を有するフィルムを
使用する必要があるので、これら高分子フィルムとして
はポリイミドフィルム、ポリアミドイミドフィルム、ポ
リカーボネートフィルム、ポリエーテルイミドフィルム
、ポリスルホンフィルム、ポリ−４−メチルペンテンフ
ィルム、ポリパラバン酸フィルム等から選択すればよい
が、その厚みはこれが薄すぎると得られる異方導電膜が
取り扱いにくいものとなるし、厚すぎると後記する穴明
けにおいてテーパーのない穴を得ることが難しくなり、
エツチング液が穴内部に侵入しにくくなって、電鋳加工
にも長い時間が必要となるので１０〜５００μｍの範囲
、好ましくは２０〜２００μｍの範囲のものとすればよ
い。The electrically insulating polymer film constituting the anisotropic conductor of the present invention can be handled as a film because it is supported by a metal support and peeled off as described later. It is necessary to have sufficient strength and toughness, and it is also necessary that it will not be attacked by etching or electroforming processing baths. When forming an anisotropic conductive film, it is required that it not be thermally deformed even at high temperatures during heat sealing, so these polymer films include polyimide film, polyamide-imide film, polycarbonate film, polyester film, Polyetherimide film, polyarylate film, polyphenylene oxide film, polyphenylene sulfide film, polysulfone film,
Examples include poly-4-methylpentene film, polyparabanic acid film, polyether sulfone film, polyether ether ketone film, etc. Furthermore, as described later, using a photoresist on the polymer film, holes can be removed with alkali, solvent, etc. When processing, it is necessary to use a film that has alkali solubility or organic solvent solubility, so these polymer films include polyimide film, polyamideimide film, polycarbonate film, polyetherimide film, polysulfone film, and polysulfone film. -4-Methylpentene film, polyparabanic acid film, etc. may be selected, but if the thickness is too thin, the obtained anisotropic conductive film will be difficult to handle, and if it is too thick, there will be no taper when drilling the holes as described later. It becomes difficult to get a hole,
Since it becomes difficult for the etching liquid to penetrate into the hole and a long time is required for electroforming, the thickness should be in the range of 10 to 500 .mu.m, preferably in the range of 20 to 200 .mu.m.
また、この高分子フィルムに後記するように穴明けし、
エツチング後、ここに形成されるこの異方導電膜を構成
する金属導電体はこれがＬＣＤのガラス基板とＦＰＣお
よびＩＣとの電気的接続をするものであることから良導
電性のものとすることが必要とされるが、このものは後
記するように上記した高分子フィルムに電鋳法で形成さ
れるので電着可能な金属からなるものとすることがよく
、金、銀などの貴金属では得られる異方導電膜が高価な
ものとなるので銅またはニッケルなどのような安価な金
属で作ることが好ましく、この大きさはリベット状に広
がった部分において直径が１５０μの以下で高ざが高分
子フィルムの表面から２〜１００ｕｒｎ突出するような
ものとすればよい。In addition, holes are made in this polymer film as described later,
After etching, the metal conductor constituting the anisotropic conductive film formed here must be of good conductivity since it is used to electrically connect the glass substrate of the LCD to the FPC and IC. However, as described later, this material is formed on the above-mentioned polymer film by electroforming, so it is often made of a metal that can be electrodeposited, and noble metals such as gold and silver can be used. Since the anisotropic conductive film is expensive, it is preferable to make it from an inexpensive metal such as copper or nickel. What is necessary is to protrude from the surface by 2 to 100 urns.
つぎに本発明の異方導電膜の製造方法を説明すると、こ
の製造は上記した電気絶縁性の高分子フィルムを金属支
持体に支持形成したものについて行われる。Next, the method for producing an anisotropically conductive film of the present invention will be described. This production is carried out using the above-described electrically insulating polymer film supported and formed on a metal support.
第２図、第３図はこの製造方法を図示したものであるが
、これはまず第２図ａ）、第３図ａ）に示したように金
属支持体上に熱可塑性の高分子物質が支持形成される。Figures 2 and 3 illustrate this manufacturing method. First, as shown in Figures 2a) and 3a), a thermoplastic polymer material is placed on a metal support. Support formed.
この金属支持体はこの上に以下に示す成膜方法によって
高分子フィルムを形成することから、その成膜加工に必
要な十分な強度と耐熱性があり、後にエツチング加工と
電鋳加工が行なわれるので金属とすることがよいが、こ
れはまた最終的には高分子フィルムと剥制することが必
要とされるのでこの高分子フィルムとあまり強固に接着
することのない金属とすることが好ましく、したがって
これはステンレス、ニッケル、鉄、銅、その表面をニッ
ケルめっきした鉄、銅などの複合支持体とすねばよいが
、こわはまた高分子フィルムを剥魁し易くするためにそ
の表面に剥離層を設けたものとしてもよい。なお、この
金属支持体の厚みはこれか薄すきると強度か不足して高
分子フィルムの成膜加工に支障を来たすおそれがあり、
これはまた後述するエツチング加工時に腐食される深さ
よりも十分に厚いことか必要とされるが、これか厚すぎ
ると巻物状とすることか難しくなり、連続的な加工も困
難となるので３０〜１．０００ μｍ 、好ましくは５
０〜３００μｍの範囲とすればよい。A polymer film is formed on this metal support by the film formation method shown below, so it has sufficient strength and heat resistance necessary for the film formation process, and etching processing and electroforming processing will be performed later. Therefore, it is preferable to use a metal, but since this will ultimately be required to be separated from the polymer film, it is preferable to use a metal that does not adhere very strongly to the polymer film. Therefore, this should be a composite support such as stainless steel, nickel, iron, copper, or iron or copper whose surface is nickel-plated, but the stiffness also requires a release layer on the surface to make it easier to peel off the polymer film. It may also be provided with Note that if the thickness of this metal support is too thin, the strength may be insufficient, which may interfere with the polymer film formation process.
It also needs to be sufficiently thicker than the depth that will be corroded during the etching process described below, but if it is too thick, it will be difficult to make it into a scroll shape, and continuous processing will also be difficult. 1.000 μm, preferably 5
What is necessary is just to set it as the range of 0-300 micrometers.
また、この支持体上に高分子フィルムを形成させる方法
としては、一般公知の成膜方法を使用すればよく、した
がってこの高分子フィルムが熱可塑性を有するものであ
る場合には溶融押出し法（エクストルージョン法）によ
り熔融した樹脂をＴダイにより該金属支持体上に所定の
膜厚で押出して成膜すねばよく、この高分子フィルムが
溶剤溶解性であるときには溶液流延法（キャスティング
法）によってこの高分子フィルムの溶剤溶液をリップコ
ーター ナイフコーター、リバースコーター グラビア
コーター エアナイフコーターなどを用いる公知の塗工
方法で金属支持体上に塗工したのち、溶剤を加熱により
飛散させ、この高分子フィルムが熱硬化性のものである
ときには加熱硬化させ、必要に応じ加温、養生させるよ
うにすればよいが、この高分子物質がすでにフィルムと
されている場合やこのフィルムの金属支持体に対する接
着力が低すぎる場合にはこの高分子フィルムを適宜の密
着力と剥離性を有する接着剤を用いて金属支持体に接着
してもよく、この接着剤は実験的に選択すればよい。In addition, as a method for forming a polymer film on this support, a generally known film forming method may be used. Therefore, if this polymer film has thermoplasticity, the melt extrusion method (extrusion method) may be used. It is sufficient to form a film by extruding a molten resin onto the metal support using a T-die to a predetermined thickness using a T-die, or by a solution casting method if this polymer film is solvent-soluble. After coating the solvent solution of this polymer film on a metal support using a known coating method using a lip coater, knife coater, reverse coater, gravure coater, air knife coater, etc., the solvent is scattered by heating, and this polymer film is If it is a thermosetting material, it can be cured by heating and then heated and cured if necessary. If it is too low, the polymer film may be adhered to the metal support using an adhesive having appropriate adhesion and releasability, and this adhesive may be selected experimentally.
このようにして形成された高分子フィルムはついで穴明
けし、ここに金属導電体を形成するのであるが、この穴
明けについてこれをドリルなどてＳ械的に加工すること
が困難であることから光学的に加工することが好ましく
、したがってこれは第２図ｂ）に示したように例えば炭
酸ガスレーザＹＡＧレーザーまたはエキシマレーザ−な
どの照射により行えばよい。これらレーザーによる穴明
けはその出力レーザーを適宜なレンズなどを用いて目的
とする穴径に集光して加工すればよいが、高分子フィル
ムに所望の孔径を所望のピッチで配列したマスクを配置
し、これに加工可能なエネルギー密度（Ｊ／ｃｍ３）を
有するレーサーを照射すればよく、これはまた出力を集
光する以前に所望の孔径と所望のピッチに集光レンズの
倍率に等しい倍率をもつ拡大マスクを使用し、このマス
クによってレーザー出力をパターニングした後に該レン
ズを用いて集光し加工するようにしてもよい。The polymer film formed in this way is then drilled to form a metal conductor therein, but it is difficult to process these holes mechanically with a drill or the like. It is preferable to process optically, and therefore this can be carried out by irradiation, for example with a carbon dioxide laser, YAG laser or excimer laser, as shown in FIG. 2b). Drilling with these lasers can be done by focusing the output laser to the desired hole diameter using an appropriate lens, etc., but a mask with the desired hole diameter arranged at the desired pitch is placed on the polymer film. Then, it is sufficient to irradiate this with a laser having a processable energy density (J/cm3), which also applies a magnification equal to the magnification of the condensing lens to the desired hole diameter and desired pitch before concentrating the output. It is also possible to use a magnifying mask with a mask, pattern the laser output using this mask, and then focus the light using the lens for processing.
なお、この加工は目的とする異方導電膜が連続したリボ
ンとされることが好ましいことから、穴加工の位置を順
次リボン上に移動して連続的に行なうことがよいが、こ
こに使用するレーザー８力についてはこれを集光した場
合のエネルギー密度が大きすぎると一度のパルス照射で
フィルムに穴明けと共に金属支持体も掘りこむことにな
り、その後のエツチング精度に影響が与えられるので、
この出力は加工する高分子フィルムの厚みによって適宜
変化させることが必要で、これは高分子フィルムを一度
の照射で穴明けするのではなく、数度のパルス照射によ
って穴明けするようにすることがよく、このレーザー出
力の低下はこの出力をミラーなどを用いて分岐させて、
分岐光を集光した際のエネルギー密度を低下させて多数
の穴明は加工を同時に実施するようにすればよい。In addition, since it is preferable that the target anisotropic conductive film is formed into a continuous ribbon, it is better to perform this process continuously by moving the position of the hole process on the ribbon one by one. Regarding the laser 8 power, if the energy density when condensed is too high, a single pulse irradiation will not only make holes in the film but also dig into the metal support, which will affect the subsequent etching accuracy.
This output needs to be changed appropriately depending on the thickness of the polymer film to be processed.This means that the holes should not be made in the polymer film by one irradiation, but by several pulses of irradiation. This reduction in laser output is often achieved by branching the output using a mirror or the like.
It is sufficient to reduce the energy density when condensing the branched light and perform the machining of a large number of holes at the same time.
また、この穴明は加工は例えば第３図ｂ）に示したよう
にこの高分子フィルムにまずフォトレジストを塗布しパ
ターニングしたのちこれを硬化して、この部分の高分子
フィルムを溶解除去するようにしてもよい。これらのフ
ォトレジストは一般に液状またはフィルム状であること
から、その形成は公知のレジスト形成方法で行えはよく
、具体的にはスピンコーター、リップコーター、ナイフ
コーター リバースコーター グラビアコーターエアナ
イフコーター スプレィコーターなどの方法を用いれば
よいが、スピンコーターは処理が枚葉となり、連続的な
巻物状の塗工ができないことからスピンコーター以外の
塗工方法とすることが好ましい。また、このレジストが
フィルム状のトライフィルムである場合にはその保護フ
ィルムを剥離したのち、この面に電気絶縁性の上記した
高分子フィルムを当接させ、適宜な加圧、加熱をしてレ
ジスト層を形成すればよい。このフォトレジストは紫外
線（ＵＶ）や電子線（ＥＢ）が照射されると、この照射
された部分が硬化してアルカリ溶液や有機溶剤に溶解し
なくなるネガタイプレジストと、照射された部分がアル
カリ溶液や有ａｍ剤に溶解するポジタイプレジストの２
種類があり、本発明ではこのいずれのレジストも使用す
ることができるか、現像により溶解する面積が大きいと
現像液の組成コントロールが難しくなるし、不良も生じ
易くなり、また解像度についてもポジタイプレジストが
すぐれているので、ポジタイプレジストとすることが好
ましく、このポジタイプレジストとしてはクレゾール系
ノボラック樹脂にナフトキノンジアミドエステル化物を
主とする感光剤と有機溶剤および少量の分解促進剤、安
定剤などからるものを使用すればよい。In addition, to process this hole, for example, as shown in Figure 3b), first coat the polymer film with photoresist, pattern it, then harden it, and then dissolve and remove the polymer film in this area. You can also do this. Since these photoresists are generally in liquid or film form, they can be formed using known resist forming methods, such as spin coaters, lip coaters, knife coaters, reverse coaters, gravure coaters, air knife coaters, spray coaters, etc. However, it is preferable to use a coating method other than the spin coater because the spin coater processes single sheets and cannot perform continuous scroll coating. If this resist is a film-like tri-film, after peeling off the protective film, the above-mentioned electrically insulating polymer film is brought into contact with this surface, and appropriate pressure and heat are applied to the resist. All you have to do is form a layer. When this photoresist is irradiated with ultraviolet rays (UV) or electron beams (EB), the irradiated area hardens and becomes insoluble in alkaline solutions or organic solvents, while the irradiated area hardens and becomes insoluble in alkaline solutions or organic solvents. 2 of positive type resist that dissolves in ammonium chloride
There are several types of resists, and in the present invention, can any of these resists be used?If the area that dissolves during development is large, it becomes difficult to control the composition of the developer, and defects are likely to occur, and in terms of resolution, positive type resists Since it has excellent You can use whatever you have.
なお、このポジタイプレジストの反応メカニズ光エネル
ギによってＷａｎｇｅｒ−Ｍｅｅｙｗｅｉｎ転位を起こ
し、ケテンを経てアルカリ可溶のインデンカルボン酸と
なり、照射部が溶解するというものであるが、このポジ
タイプのドライフィルムとしてはで示されるような０−
ニトロベンゼン基の光反応を利用したポリ（０−ニトロ
ベンジルメチルアクリレート）が例示される。The reaction mechanism of this positive type resist is that the optical energy causes a Wanger-Meeywein rearrangement, which changes to ketene and becomes alkali-soluble indene carboxylic acid, and the irradiated area dissolves, but this is not possible for this positive type dry film. 0- as shown
An example is poly(0-nitrobenzylmethyl acrylate) that utilizes the photoreaction of nitrobenzene groups.
また、このフォトレジストの厚さはこれが薄すぎるとビ
ンボールなどの問題が生じ易くなるし、現像液に対する
抵抗力も弱くなり、厚すぎると露光における解像度が低
下するし、このレジストは高価なものであるので、これ
はレジストが液体の場合は０５〜３０μＷとし、このレ
ジストがドライフィルムの場合には０．５〜１００μｍ
の範囲とすればよい。Furthermore, if the thickness of this photoresist is too thin, problems such as bottle balls will easily occur, and resistance to developer will be weak, and if it is too thick, the resolution during exposure will decrease, and this resist is expensive. Therefore, if the resist is a liquid, this should be 05 to 30 μW, and if this resist is a dry film, it should be 0.5 to 100 μW.
It may be within the range of .
このようにしてフォトレジストを形成させた高分子フィ
ルムは、このレジストがポジタイプレジストのときは溶
媒を飛散させると共にブリベータを実施してレジスト膜
を緻密化させるのであるが、このものはついでこのレジ
スト表面にマクスなどを用いて所定にパターニングされ
たＵｖまたはＢＥを照射して露光を行なったのち、現像
液を用いて溶解する部分を溶解するのであるが、この現
像液としてはレジストがポジタイプのあるときには一般
に有機アミン水溶液のようなアルカリ溶液か使用され、
これは具体的にはテトラメチルアンモニウムヒドロオキ
シドなどが例示される。When the photoresist is formed on the polymer film in this way, the resist film is densified by scattering the solvent and performing blivata when the resist is a positive type resist. After exposing the surface by irradiating UV or BE that has been patterned in a predetermined manner using a mask or the like, a developer is used to dissolve the portion to be dissolved. Sometimes an alkaline solution, typically an aqueous organic amine solution, is used;
A specific example of this is tetramethylammonium hydroxide.
この高分子フィルムの穴明けはこの現像液で現像された
パターンを用いて行なわれるが、これはこの高分子フィ
ルムがレジスト同様にアルカリ溶液に溶解するものであ
る場合には、レジストの現像工程に引続いてこの高分子
フィルムを溶解するようなアルカリ溶液中にこれを所定
時間浸漬すわばよい。このアルカリ溶液に溶解する高分
子フィルムはポリイミドフィルム、ポリアミドイミドフ
ィルム、ポリパラバン酸フィルムが例示されるが、この
高分子フィルムがアルカリ溶液ではなく所定の有機溶剤
に溶解するものである場合には、現像終了後にレジスト
塗膜を１００℃以上でアフターベークしてその耐溶剤性
を向上させた後に、このフィルムを溶解する所定の有機
溶剤中にこれを浸漬し穴明は加工を実施すれはよく、こ
の有機溶剤についてはポリカーボネートフィルムに対し
てはトルエン、キシレンなどの芳香族炭化水素を、ポリ
パラバン酸フィルムに対してはジメチルホルムアミド、
テトラヒドロフラン、プロピレンカーボネートの単体も
しくは混合溶剤が例示される。Holes in this polymer film are made using a pattern developed with this developer, but if this polymer film is soluble in an alkaline solution like resist, this is because the resist development process Subsequently, the polymer film may be immersed for a predetermined time in an alkaline solution that dissolves the polymer film. Polymer films that dissolve in this alkaline solution include polyimide films, polyamide-imide films, and polyparabanic acid films, but if this polymer film is soluble in a specified organic solvent rather than in an alkaline solution, it must be developed. After finishing, the resist coating film is after-baked at 100℃ or higher to improve its solvent resistance, and then it is immersed in a specified organic solvent that dissolves the film. Regarding organic solvents, aromatic hydrocarbons such as toluene and xylene are used for polycarbonate films, and dimethylformamide, etc. are used for polyparabanic acid films.
Examples include single or mixed solvents of tetrahydrofuran and propylene carbonate.
また、この穴明は後、残留するレジスト膜は剥離剤を用
いて剥離することがよいが、その厚みが薄く、これが高
分子フィルムに十分強固に接着している場合にはこれは
強いて剥離する必要はない。In addition, after making this hole, it is best to remove the remaining resist film using a remover, but if the resist film is thin and adheres sufficiently firmly to the polymer film, it may be necessary to remove it by force. There's no need.
なお、このようにして高分子フィルム上に設けらねた穴
の径およびピッチは目的とする異方導電膜がＬＣＤとＦ
ＰＣおよびＩＣチップとの接続ピッチである０、２ｍｍ
以下とすることが必要とされるので、このピッチは０．
２ｍｍ以下とされるか、そのＬＣＤ側の電極幅と電極間
の幅を１：】としたときに隣接電極間でリークを生じな
い導電体の径は１００μｍ以下であり、この接続に関与
する導電体の径と穴径とはほぼ同じとなることから、こ
の穴径は１００μｍ以下とすればよい。なお、この高分
子フィルムをリボン状とした場合には第１図Ｃ）に示し
たようにリボンの長手方向に千鳥掛は複数配列とし、ま
た、隣接配列の穴が互いに隣接する穴配列のほぼ中央に
位置するようにした場合にはこれをリボン状の異方導電
膜とするとこれが２〜３ｍｍの幅をもつものであること
から、見かけ上の接続可能なピッチは穴明はピッチの半
分とすることができるので、この穴の配列ピッチは０．
４ ｍｍ以下とすることができる。The diameter and pitch of the holes provided on the polymer film in this way are determined so that the intended anisotropic conductive film can be used for LCD and F.
0.2mm connection pitch with PC and IC chip
This pitch is required to be less than or equal to 0.
2mm or less, or the diameter of the conductor that does not cause leakage between adjacent electrodes is 100μm or less when the electrode width on the LCD side and the width between the electrodes are set to 1:], and the conductor involved in this connection is Since the diameter of the body and the diameter of the hole are approximately the same, the diameter of the hole may be 100 μm or less. In addition, when this polymer film is made into a ribbon, multiple zigzags are arranged in the longitudinal direction of the ribbon as shown in Figure 1C), and the holes in adjacent arrangements are approximately equal to each other in the arrangement of adjacent holes. If the ribbon-shaped anisotropic conductive film is located in the center, it will have a width of 2 to 3 mm, so the apparent pitch at which the holes can be connected is half the pitch. Therefore, the arrangement pitch of this hole is 0.
It can be set to 4 mm or less.
このように穴明けされた高分子フィルムはこの穴に金属
導電体を形成するのであるが、穴明けされた状態のまま
では得られる異方導電体の金属導電体が高分子フィルム
面より突出しないことから、この金属導電体の取付けに
先立って第２図Ｃ）、第３図Ｃ）に示したようにこの金
属支持体をエツチングする必要がある。この金属支持体
のエツチングは例えば従来公知の塩化第二鉄などの金属
塩化物系のエツチング液を用いる方法、あるいはこれを
陽極として電解液に浸漬し、陽極酸化によってエツチン
グする電解エツチングとすればよいカへ目的とする異方
導電膜が好ましくは連続したリボン状のものとされるこ
とから、こわに対応し易い金属塩化物系のエツチング液
を使用するものとすることがよい。しかし、このエツチ
ングにおいても加工された穴径が小さい場合にはこれを
エツチング液中に浸漬したときに穴内部の空気が抜けな
いためにエツチングが不完全になることから、これはポ
ンプにより加圧されたエツチング液をノズルより噴射さ
せるスプレ一方式、あるいは該エツチング液に超音波を
かける方法で行なうことが好ましい。なお、このように
作られた第２図Ｃ）、第３図Ｃ）に示されているエツチ
ング部の深さはこれが浅すぎると最終的に得られる導電
体の高分子フィルムよりの突出高さが小さくなって接続
電極との良好な接続が得られなくなるし、深すぎるとこ
のエツチングが金属支持体の厚み方向たけてなく、その
面方向にも進行するものであるために得られる導電体の
径が大きくなりすぎるので、この深さは２〜１００μｍ
の範囲とすればよい。A polymer film with holes formed in this way forms a metal conductor in the hole, but if the hole is left in the hole, the metal conductor of the anisotropic conductor obtained will not protrude from the surface of the polymer film. Therefore, prior to attaching the metal conductor, it is necessary to etch the metal support as shown in FIGS. 2C) and 3C). This metal support may be etched by, for example, a method using a conventionally known metal chloride etching solution such as ferric chloride, or an electrolytic etching method in which the etching solution is immersed in an electrolytic solution as an anode and etched by anodic oxidation. Furthermore, since the intended anisotropic conductive film is preferably in the form of a continuous ribbon, it is preferable to use a metal chloride-based etching solution that can easily deal with stiffness. However, even with this etching, if the hole diameter is small, the air inside the hole cannot escape when it is immersed in the etching solution, resulting in incomplete etching. It is preferable to use a spray method in which the etching solution is sprayed from a nozzle, or a method in which ultrasonic waves are applied to the etching solution. Note that if the depth of the etched portion shown in Figure 2 C) and Figure 3 C) is too shallow, the height of the final conductor protruding from the polymer film will be too high. If it is too deep, this etching will not extend in the thickness direction of the metal support, but will also progress in the surface direction, making it difficult to obtain a good connection with the connecting electrode. Since the diameter becomes too large, this depth should be 2 to 100 μm.
It may be within the range of .
つぎに上記したような穴明けとエツチングを終了したの
ち、第２図ｄ）、第３図ｄ）に示したようにこの高分子
フィルムの穴部に金属導電体が電鋳法で形成されるので
あるが、この電鋳法で形成される導電体は電着可能な金
属から作られるものとすればよく、これは金、銀などの
貴金属では得られる異方導電膜が高価なものとなること
から、多くのめっき浴が知られている銅またはニッケル
とすることが好ましい。またこの電鋳に使用されるめっ
き浴は高分子フィルムへの影響や該フィルムの剥離など
の問題から極度に酸性またはアルカリ性である浴や熱な
どのストレスの大きい浴は好ましくないので、この導電
体が銅である場合はビロリン酸浴、スルファミン酸銅浴
とし、ニッケルである場合にはワット浴、スルファミン
酸ニッケル浴などとすることが好ましく、これによれは
金属導電体を高分子フィルムの穴部に容易に形成するこ
とができる。なお、このようにして得たリベット状の導
電体の厚みは該高分子フィルムの表面からこの導電体が
２〜１００μｍ突出するような厚みとすることが好まし
い。Next, after completing the hole drilling and etching described above, a metal conductor is formed in the holes of this polymer film by electroforming, as shown in Figure 2 d) and Figure 3 d). However, the conductor formed by this electroforming method should be made from a metal that can be electrodeposited, since the anisotropic conductive film obtained from noble metals such as gold and silver is expensive. Therefore, it is preferable to use copper or nickel, for which many plating baths are known. In addition, the plating bath used for this electroforming is not preferably an extremely acidic or alkaline bath or a bath that is subject to high stress such as heat due to problems such as the effect on the polymer film and the peeling of the film. When the conductor is copper, it is preferable to use a birophosphate bath or a copper sulfamate bath, and when it is nickel, it is preferable to use a Watt bath or a nickel sulfamate bath. can be easily formed. The thickness of the rivet-like conductor thus obtained is preferably such that the conductor protrudes from the surface of the polymer film by 2 to 100 μm.
また、このよにして作られた導電体は銅、ニッケルが酸
化皮膜や腐食による導電性の低下などの問題をもつもの
であることから、これには耐腐食性の金属めっきを施こ
すことがよく、この金属めっきは該導電体を電鋳により
形成する前にエツチング加工された穴部に予しめ耐食性
の金属めっきを１層流したのち、電鋳法で導電体を形成
し、その後に導電体表面に金属めっきを少なくとも一層
施すか、あるいは高分子フィルムに導電体を設けた異方
導電膜を金属支持体から剥離したのちに無電解めっきを
少なくとも一層行なってもよいか、上記前者のめっき方
法の場合には、導電体の上面と下面のめっき材料を接続
する相対電極の材質に合わせて異なる金属とすることが
できるという有意性がある。また、ここに使用する耐腐
食性の金属としては耐腐食性のすくれた貴金属や、その
酸化物で導電性を有するもの、さらにははんだのように
異方導電膜として使用する際の加熱によって熔融し、接
続を形成する低融点の金属があげられ、具体的には金、
銀、パラジウム、白金、すず、はんだ、インジウム、モ
リブデン、クロムなどの単体あるいはこれらの２種以上
の合金などが例示されるが、この厚みはこれが薄すぎる
と耐腐食性の効果が得られず、厚すぎると得られる異方
導電膜が高価なものとなることから０．０１〜１０μ０
の範囲とすればよい。しかし、この導電体の材料が銅で
ある場合にこれに金めつきをすると、長期使用中に鋼中
に金が拡散して耐腐食性が低下するなどの問題が生じる
ので、この場合にはまず銅にニッケルをめっきし、つい
でこれに金めつきをするなどの多層めっきとすることが
よい。In addition, since the conductors made in this way have problems such as decreased conductivity due to oxide film and corrosion of copper and nickel, it is necessary to apply corrosion-resistant metal plating to the conductors. This metal plating is often done by first pouring one layer of corrosion-resistant metal plating into the etched hole before forming the conductor by electroforming, then forming the conductor by electroforming, and then applying the conductive layer. At least one layer of metal plating may be applied to the body surface, or at least one layer of electroless plating may be performed after peeling an anisotropic conductive film in which a conductor is provided on a polymer film from a metal support. In the case of this method, it is significant that different metals can be used depending on the material of the relative electrode that connects the plating materials on the upper and lower surfaces of the conductor. In addition, the corrosion-resistant metals used here include corrosion-resistant precious metals, their oxides that have conductivity, and even solder that can be heated when used as an anisotropic conductive film. These include metals with low melting points that melt and form connections, specifically gold,
Examples include single substances such as silver, palladium, platinum, tin, solder, indium, molybdenum, and chromium, or alloys of two or more of these, but if the thickness is too thin, corrosion-resistant effects cannot be obtained; If it is too thick, the resulting anisotropic conductive film will be expensive;
It may be within the range of . However, if the material of this conductor is copper, if it is plated with gold, problems such as gold diffusion into the steel during long-term use and a decrease in corrosion resistance will occur, so in this case, It is preferable to use multilayer plating, such as first plating copper with nickel and then plating it with gold.
なお、このようにして作られた金属導電体は最終的には
高分子フィルムと共に金属支持体から剥離する必要があ
ることから、前記した穴明け、エツチング処理を実施し
たのちに、電解脱脂液または苛性ソーダ溶液中で短時間
陽極酸化処理するか、クロム酸ナトリウムや硫化ナトリ
ウム液に短時間浸漬して剥離用皮膜としての酸化物薄膜
、クロメートｉｓを形成してもよい。Note that the metal conductor made in this way must ultimately be peeled off from the metal support together with the polymer film, so after performing the hole-drilling and etching treatments described above, electrolytic degreasing solution or A thin oxide film, chromate IS, may be formed as a peeling film by anodic oxidation treatment in a caustic soda solution for a short time or by immersion in a sodium chromate or sodium sulfide solution for a short time.
このように金属導電体が形成された高分子フィルムはつ
いでこれを金属支持体から剥離することによって第２図
ｅ）、第３図ｅ）に示したような計重とする異方導電体
とするのであるが、この高分子フィルムと金属支持体と
の剥離は適宜の組成を有する溶剤中にこれを浸漬するか
、超音波やポンプにより加圧した溶剤をノズルから噴出
するスプレ一方式で行えばよい。なお、高分子フィルム
と金属支持体との接着が強く、該高分子フィルムが耐溶
剤性の低いもので適宜の溶剤がない場合などで、例えば
この金属支持体が銅箔であり、該リベット状の導電体が
ニッケルであるときには、これを亜塩素酸塩（ナトリウ
ム塩、アンモニウム塩）水溶液中にアンモニアを加えて
アルカリ性とし、ｐＨを１０程度としたアルカリエツチ
ング液中に浸漬すれば銅箔のみが選択的にエツチングさ
れるので、容易に剥離することかできる。なお、この場
合高分子フィルムがアルカリ溶解性のフィルムである場
合には金属支持体の反対の面をマスキングすればよいが
、最終的に該異方導電膜を接着性のものとする場合には
接着剤層を先に形成させてこれをマスキングの代用とし
てもよい。また、上記した選択エツチングによる剥離方
法において、この導電体に使用される金属材料は前記し
た方法で予じめニッケルめっきしたものとしてもよいこ
とから、該金属材料はニッケルに限定されるものではな
く銅やその他の金属であってもよい。The polymer film on which the metal conductor has been formed is then peeled off from the metal support to form an anisotropic conductor weighed as shown in Figures 2e) and 3e). However, the polymer film and the metal support can be separated by immersing it in a solvent with an appropriate composition, or by spraying a pressurized solvent using ultrasonic waves or a pump and jetting it out from a nozzle. That's fine. Note that in cases where the adhesion between the polymer film and the metal support is strong, the polymer film has low solvent resistance, and there is no suitable solvent, for example, the metal support is copper foil and the rivet-like When the conductor is nickel, it is made alkaline by adding ammonia to an aqueous solution of chlorite (sodium salt, ammonium salt), and then immersed in an alkaline etching solution with a pH of about 10, which removes only the copper foil. Since it is selectively etched, it can be easily peeled off. In this case, if the polymer film is an alkali-soluble film, it is sufficient to mask the opposite side of the metal support, but if the anisotropic conductive film is ultimately made adhesive, An adhesive layer may be formed first and used instead of masking. Furthermore, in the selective etching peeling method described above, the metal material used for the conductor may be nickel-plated in advance by the method described above, so the metal material is not limited to nickel. It may also be copper or other metal.
このようにして得られた異方導電体は、上記したような
めっきなどの処理を必要とする場合にはこれを実施し、
その後これを所定の幅にスリットしてリボン状のものと
して使用するのであるが、このものはＬＣＤとＦＰＣま
たはＩＣとの間に介在させ、圧接することによってＬＣ
ＤとＦＰＣ＊たはＩＣを電気的に接続するものであるの
で、このものは接着機能を有するものとすることがよく
、したがってこれはその異方導電膜を熱溶融性の接着剤
溶液中に浸漬するか、またはこの接着剤溶液を異方導電
膜にコーティングした後、これを乾燥して異方導電膜の
両面に接着剤層を形成させるか、または剥剛フィルムな
どの基材上に形成された接着剤層を該異方導電膜の両面
にラミネートすることなどによって接着剤層を形成する
ことが好ましいが、この熱溶融接着剤層の形成は前記し
た高分子フィルムをキャスティングで形成するのに用い
たコーティング方法によればよい。しかし、この熱溶融
接着剤の厚みはこれが高分子フィルム面から突出してい
るリベット状の導電体の高さよりも小さいと接着剤と電
極が接しないので接着できず、これが厚すぎると接着時
の加熱加圧によって流動する接着剤の量が多くなりすぎ
て樹脂の流動に時間がかかり、接続に必要な時間が長く
なるし、流動した接着剤のたまりによってＦＰＣか変形
することにより、応力が生じ接続信頼性が低下するおそ
れが生じるので、これは高分子フィルム面から突出して
いる導電体の高さより５〜５０μｍ１ｇくなる程度とす
ればよく、これによれはＬＣＤとＦＰＣおよびＩＣとの
接続をより容易にすることができるという有利性が与え
られる。なお、ここに使用される接着剤は熱熔融性のも
のてあればよく、これにはスチレン−ブタジェン−スチ
レンブロック共重合体、スチレン−イソブチレン−スチ
レンブロック共重合体、飽和共重合ポリエステル樹脂、
エチレン−酢酸ビニル共重合体、エチレン−アクリル酸
エチル共重合体、エチレン−アクリル酸イソブチル共重
合体、ナイロン１１、ナイロン１２、アイオノマー樹脂
などの熱可塑性エラストマーや熱可塑性樹脂に必要に応
じロジンおよびロジン誘導体、テルペン樹脂および変性
テルペン樹脂、石油樹脂、クマロン−インデン樹脂、フ
ェノール樹脂、アルキッド樹脂などの粘着付与剤やエポ
キシ系樹脂、イソシアネート系の潜在性硬化剤、光硬化
性樹脂、酸化防止剤、安定剤などを添加し、必要に応じ
トルエン、メチルエチルケトン、酢酸エチル、セルソル
ブなどの溶剤に溶解したものとすればよいが、この異方
導電体の上下面に形成される熱溶融性接着剤は、この上
下面において接着する相手がガラス基板やＦＰＣに例示
されるように異なるものであることから、この接着相手
に合わせて上下面で組成の異なるものとしてもよい。If the anisotropic conductor thus obtained requires treatment such as plating as described above, this is carried out,
This is then slit to a predetermined width and used as a ribbon, which is inserted between the LCD and FPC or IC and pressed together.
Since it is used to electrically connect D and FPC* or IC, this material often has an adhesive function. After dipping or coating the anisotropic conductive film with this adhesive solution, it is dried to form an adhesive layer on both sides of the anisotropic conductive film, or formed on a substrate such as a rigid film. It is preferable to form an adhesive layer by laminating the adhesive layer on both sides of the anisotropic conductive film, but this hot-melt adhesive layer can be formed by casting the polymer film described above. The coating method used may be used. However, if the thickness of this hot-melt adhesive is smaller than the height of the rivet-like conductor protruding from the surface of the polymer film, the adhesive and electrode will not come into contact with each other, making it impossible to bond. The amount of adhesive that flows due to pressurization becomes too large, and it takes time for the resin to flow, which increases the time required for connection. Also, the FPC is deformed due to the pool of flowing adhesive, which causes stress and prevents the connection. Since there is a risk that reliability may decrease, this should be set to 5 to 50 μm and 1 g from the height of the conductor protruding from the polymer film surface. The advantage is that it can be done easily. The adhesive used here may be a heat-melting adhesive, such as styrene-butadiene-styrene block copolymer, styrene-isobutylene-styrene block copolymer, saturated copolymerized polyester resin,
Rosin and rosin as needed for thermoplastic elastomers and thermoplastic resins such as ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-isobutyl acrylate copolymer, nylon 11, nylon 12, and ionomer resins. Derivatives, terpene resins and modified terpene resins, petroleum resins, coumaron-indene resins, phenolic resins, tackifiers such as alkyd resins, epoxy resins, isocyanate-based latent hardeners, photocurable resins, antioxidants, stabilizers The hot-melt adhesive formed on the upper and lower surfaces of the anisotropic conductor is Since the objects to be bonded on the upper and lower surfaces are different, as exemplified by glass substrates and FPCs, the compositions may be different on the upper and lower surfaces depending on the objects to be bonded.
このように得られた本発明の異方導電膜を使用すると、
従来の分散型異方導電膜で問題とされている二次凝集塊
などによるリークが発生しないし、また接着剤の流動に
伴なって導電体が移動することもないのでヒートシール
部周囲における接着剤のたまり部での導電粒子の連鎖に
よるリーク発生もなく、さらにはその導電体が分散型異
方導電膜の導電粒子のように任意に分散されたものでは
なく、これは所定の位置に配置されたものであるので、
接続される電極間に導電粒子が存在せずに不導通を生じ
るという従来の分散型異方導電膜におけるような問題が
なく、これはまた電鋳ン去により形成された導電体の厚
さが均一性にすぐれているので、従来の分散型異方導電
膜における導電粒子のバラツキによる接続抵抗が著しく
高くなったり、不導通を生ずるなどの問題もなくなると
いう有利性をもつものとなるし、これはまたカラーＬＣ
Ｄパネルにおける接続ピッチである０、２＋ｎｍ以下の
電極の接続が可能になるという有利性をもつものである
。When using the anisotropic conductive film of the present invention obtained in this way,
There is no leakage caused by secondary agglomerates, which is a problem with conventional dispersed anisotropic conductive films, and the conductor does not move as the adhesive flows, so it is easy to bond around the heat-sealed part. There is no leakage due to chains of conductive particles in the agent pool, and the conductors are not arbitrarily dispersed like the conductive particles in a dispersed anisotropic conductive film, but are placed at predetermined positions. Because it was done,
There is no problem of non-conductivity caused by the absence of conductive particles between the connected electrodes, unlike in conventional dispersed anisotropic conductive films, and this is also due to the fact that the thickness of the conductor formed by electroforming is Because of its excellent uniformity, it has the advantage of eliminating the problems of conventional dispersed anisotropic conductive films, such as extremely high connection resistance and non-conductivity caused by variations in conductive particles. Hamata color LC
This has the advantage that electrodes can be connected at a pitch of 0.2+ nm or less, which is the connection pitch in the D panel.
［実施例コ つぎに本発明の実施例をあげる。[Example code] Next, examples of the present invention will be given.
実施例１
金属支持体として厚さ１００μｍ、幅２２５ｍｍの圧延
銅箔・Ｃ−１０２０［行内金属箔粉工業■製商品名コを
使用し、この表面にポリパラバン酸ワニス・ツルラック
ＸＴ−１０１［日東化学工業銖製商品名］をナイフコー
ターを用いて塗工し、これを金属支持体側から１００℃
の温度で３０秒間加熱したのち、連続乾燥炉中に導入し
て１５０℃で６０秒間加熱乾燥させて、金属支持体上に
厚さ３０μｍのポリパラバン酸フィルムを形成させた。Example 1 A rolled copper foil with a thickness of 100 μm and a width of 225 mm, C-1020 (trade name, manufactured by Gyonai Metal Foil and Powder Industries) was used as a metal support, and the surface was coated with polyparabanic acid varnish, Tsurulac XT-101 [Nitto Chemical Co., Ltd.]. [trade name manufactured by Industrial Co., Ltd.] using a knife coater, and coated at 100°C from the metal support side.
After heating for 30 seconds at a temperature of , the sample was introduced into a continuous drying oven and dried by heating at 150° C. for 60 seconds to form a polyparabanic acid film with a thickness of 30 μm on the metal support.
ついで、このポリパラバン酸フィルムに発振波長が１．
０６μｍ、最大発振出力が１２ＷであるＴＥＡｏ。Next, this polyparabanic acid film was coated with an oscillation wavelength of 1.
06μm, TEAo with a maximum oscillation output of 12W.
発振モードの連続励起ＹＡＧレーサー・５Ｌ１１５Ｌ［
日本電気■製部品名］に超音波Ｑスイッチユニット・５
Ｌ２３１Ｇ ［日本電気■製部品名］を組みこんだ繰り
返し周波数ＩＫＨｚ、尖頭出力２０ＫＷ以上、パルス幅
約８０・ｎ ｓｅｃ のＹＡＧレーザスクライバ−を
使用して、このＹＡＧレーザーを精密光学レンズを用い
て５０μｍのスポット径に集光し、これを上記ポリパラ
バン酸フィルム；：照射して穴径約ｓｏｕｍＯ穴明を行
ない、このフィルムをＮＣテープを用いてその照射位置
を１００匹ずらして再度穴明は加工し、これを繰り返す
ことにょフて５０ｕｍの穴明けを１００ 、ｕｍのピッ
チで該フィルムの幅方向に実施し、幅方向の一列が終了
すると次の一列を１００μｍ移動して行なうと共に、そ
の穴明は位置が前列の穴明は位置の中央にくるように千
鳥掛に配列したのち、このフィルムの表面をメチルアル
コールを含浸させた布でラビングし、純水で洗浄してレ
ーザーによる穴明けで出たカスなどを除去した。Continuous excitation YAG racer in oscillation mode・5L115L [
Ultrasonic Q switch unit 5 for NEC ■Part name]
Using a YAG laser scriber with a repetition frequency of IKHz, a peak output of 20KW or more, and a pulse width of about 80・n sec, which incorporates L231G [part name manufactured by NEC Corporation], this YAG laser is used with a precision optical lens. The light was focused on a spot diameter of 50 μm and irradiated with the above polyparabanic acid film to make a hole with a hole diameter of approximately soum0.The film was then re-done by shifting the irradiation position by 100 fish using NC tape. By repeating this process, holes of 50 um are drilled in the width direction of the film at a pitch of 100 um, and when one row in the width direction is completed, the next row is moved 100 μm and the holes are drilled. After arranging the holes in the front row in a staggered manner so that they are in the center, the surface of the film is rubbed with a cloth impregnated with methyl alcohol, washed with pure water, and then drilled with a laser. Removed debris etc.
洗浄終了後、これを乾燥しその裏面の銅箔にマスキング
用の粘着フィルムをラミネートとし、この穴明は加工さ
れたポリパラバン酸フィルムを４０ホーメの酸化第二鉄
溶液を収納したエツチング槽に浸漬し、このエツチング
液を加圧ポンプて加圧してノズルより１呂させると共に
この液に超音波をかけて該穴部にエツチング液か完全に
浸漬するようにして金属支持体としての銅箔を２０ｐｍ
蝕刻し、純水による洗浄を数回くり返したのち、０．１
規定のクロム酸ナトリウム水溶液に１秒間浸漬して剥離
用皮膜を形成し、水洗した。After cleaning, this was dried, and an adhesive film for masking was laminated on the copper foil on the back side, and the processed polyparabanic acid film was immersed in an etching tank containing 40 mm of ferric oxide solution. This etching solution was pressurized with a pressure pump and brought out through the nozzle, and ultrasonic waves were applied to the solution so that the hole was completely immersed in the etching solution, and a copper foil serving as a metal support was heated to a depth of 20 pm.
After repeated etching and washing with pure water several times, 0.1
A release film was formed by immersing it in a specified sodium chromate aqueous solution for 1 second, and the film was washed with water.
つぎにこれをワット浴中に浸漬し、電鋳法によってニッ
ケルを析出させてこのニッケルの厚みがポリパラバン酸
フィルムの表面から２０μｍ突出するようにしてリベッ
ト状の導電体を形成させ、ついでこのマスキングフィル
ムを銅箔より剥離した後、これを亜塩素酸アンモニウム
水溶液にアンモニアを加えてｐＨ１０としたアルカリエ
ツチング液・アルカリエッチ［■ヤマトヤ商会製商品名
コに浸漬して金属支持体としての銅箔を完全に除去し、
水洗、乾燥させたところ、約５０μｍのリベット状ニッ
ケル導電体が１００μｍのピッチで千鳥掛に配列された
ポリパラバン酸フィルムを基材とした異方導電膜が得ら
れたので、このニッケル表面に無電解メツキで厚さ０．
０１５μｍの金薄膜を形成させたのち、この異方導電膜
の上下面に厚さ５０μｍのシリコーン離型剤コートポリ
エステルフィルム・セラビールＱ−１［東洋メタライジ
ング味製商品名］上にガラス転好点６℃、環球法軟化点
１２３℃の飽和共重合ポリエステル・バイロン＃３００
［東洋紡績に製部品名］１００重量部をトルエン２０
０重量部に熔解した熱溶融性接着剤溶液をナイフコータ
ーを用いて塗工し、乾燥して乾燥膜厚３０μｍの熱溶融
接着剤層を形成した接着フィルムを加熱加圧によりラミ
ネートした。Next, this is immersed in a Watts bath, and nickel is deposited by electroforming so that the thickness of this nickel protrudes 20 μm from the surface of the polyparabanic acid film to form a rivet-like conductor, and then this masking film After peeling off the copper foil from the copper foil, it was immersed in an alkali etching solution/alkaline etch [trade name manufactured by Yamatoya Shokai Co., Ltd.] to completely remove the copper foil as a metal support. removed to
After washing with water and drying, an anisotropic conductive film based on a polyparabanic acid film in which rivet-like nickel conductors of about 50 μm were arranged in a staggered manner at a pitch of 100 μm was obtained. Thickness is 0.
After forming a gold thin film of 0.015 μm, a glass turning point was placed on the upper and lower surfaces of this anisotropic conductive film on a 50 μm thick silicone release agent-coated polyester film Cerabil Q-1 [trade name manufactured by Toyo Metallizing Aji Co., Ltd.]. Saturated copolyester polyester Vylon #300 with ring and ball softening point of 123°C at 6°C
[Part name manufactured by Toyobo Co., Ltd.] 100 parts by weight and 20 parts by weight of toluene
A hot-melt adhesive solution dissolved to 0 parts by weight was coated using a knife coater, dried to form a hot-melt adhesive layer with a dry thickness of 30 μm, and the adhesive film was laminated by heating and pressing.
つぎに、このようにして得た異方導ｉｉ膜を幅３ｍｍに
スリットとしてリボン状としたものを、銅箔１オンス（
３６４ｍ）、電極幅が０．０７５＋ｎｍ ｖＮ極ピッチ
が０．１５ｍｍのすずメツキした接続端子電極をもつフ
レキシブルプリント基板（ＦＰＣ）と、上記と同様の電
極幅と電極ピッチをもつＩＴＯ電極ガラス基板との間に
挿入し、これをＦＰＣ側から１５０℃、４０ｋｇｆ／ｃ
ｍ２．１０秒という条件でヒートシールし、その接続抵
抗と隣接電極間での絶縁抵抗を測定したところ、電極１
，０００点の測定において接続抵抗はすべて０．５Ω／
Ｐｉｎ以下であり、絶縁抵抗は１０１０Ω以上であった
。Next, the anisotropic conductive II film obtained in this way was made into a ribbon shape by slitting it to a width of 3 mm, and a 1 ounce copper foil (
364m), a flexible printed circuit board (FPC) with a tin-plated connecting terminal electrode with an electrode width of 0.075+nm and a vN pole pitch of 0.15mm, and an ITO electrode glass substrate with the same electrode width and electrode pitch as above. 150℃, 40kgf/c from the FPC side.
When heat sealing was performed under the conditions of m2.10 seconds and the connection resistance and insulation resistance between adjacent electrodes were measured, it was found that electrode 1
In the measurement of ,000 points, all connection resistances are 0.5Ω/
Pin or less, and the insulation resistance was 1010Ω or more.
実施例２
実施例１で使用した厚さ１１００ｕの圧延銅箔上に厚さ
３０匹のポリパラバン酸フィルムを形成させたフィルム
上にロールコータ−を用いてポジタイプレジスト・０Ｄ
ＯＲ−１０１０［東京応化工業■製部品名コを２μｍの
乾燥膜厚となるように塗工し、１２０℃で２０分間プリ
ベークしたのち、つづいてこの裏面の銅箔にマスキング
用の粘着フィルムをラミネートシた。ついで、露光機・
ＰＬ艇２ＯＦ ＣＭ−２９０［キャノン抹製商品名］を
用いて該レジスト表面に合成石英の板材にクロム蒸着を
施し、これにφ＝５０ａｍ、ピッチ１００４ｍにパター
ニングされたポジマスクを密着させたのち、１０秒間紫
外線を照射して露光し、露光終了したものを専用の現像
液・０ＤＩＪＲ−１０１０現像液［東京応化工業■製部
品名］中に２分間攪拌しながら浸漬して現像し、さらに
専用のリンス液・０ＤＵＲ−１０１０リンス液［東京応
化工業■製部品名］中に１分間攪拌しながら浸漬して現
像液を中和した後、１００℃で２０分間ポストベークし
、このポストベークしたものを５重量％の苛性ソーダ水
溶液に約５分間浸漬したところ、ポリパラバン酸フィル
ムが溶解して所定のパターニングで穴明は加工されたポ
リパラバン酸フィルムが得られた。Example 2 A positive type resist 0D was applied using a roll coater onto a film in which a polyparabanic acid film of 30 layers was formed on the 1100 μ thick rolled copper foil used in Example 1.
OR-1010 (manufactured by Tokyo Ohka Kogyo ■) was coated to a dry film thickness of 2 μm, prebaked at 120°C for 20 minutes, and then an adhesive film for masking was laminated on the copper foil on the back side. Shita. Next, the exposure machine
Using PL boat 2OF CM-290 [trade name manufactured by Canon Co., Ltd.], chromium was deposited on a synthetic quartz plate material on the resist surface, and a positive mask patterned with a diameter of 50 am and a pitch of 1004 m was attached to this, and then 10 After exposure, the exposed product is immersed in a special developer, 0DIJR-1010 developer [part name manufactured by Tokyo Ohka Kogyo ■] for 2 minutes with stirring, and then developed with a special rinse. After neutralizing the developer by immersing it in 0DUR-1010 rinse solution [part name manufactured by Tokyo Ohka Kogyo ■] for 1 minute with stirring, post-baking at 100°C for 20 minutes, and post-baking the 5 When the polyparabanic acid film was immersed in a % by weight aqueous solution of caustic soda for about 5 minutes, the polyparabanic acid film was dissolved and a polyparabanic acid film with holes processed in a predetermined pattern was obtained.
つぎにこのように穴明は加工されたポリパラバン酸フィ
ルムについて実施例１と同様の方法でエツチングし、電
鋳法でニッケル製の導電体をポリパラバン酸フィルムの
表面から２０μｍ突出するように形成させ、このニッケ
ル表面に金薄膜を形成させてからこれを金属支持体から
剥離し、さらに接着剤層を設けて異方導電膜を作り、こ
れを幅３ｍｍにスリットしたリボン状のものを実施例１
と同じＬＣＤとＦＰＣとの接続に用いたところ、このも
のも電極１，０００点の測定において接続抵抗０．５Ω
／Ｐｉｎ以下、絶縁抵抗１０１０Ω以上という結果を与
えた。Next, the thus processed polyparabanic acid film was etched in the same manner as in Example 1, and a nickel conductor was formed by electroforming so as to protrude by 20 μm from the surface of the polyparabanic acid film. Example 1 A thin gold film was formed on the nickel surface and then peeled off from the metal support, and an adhesive layer was further applied to create an anisotropic conductive film, which was then slit to a width of 3 mm to form a ribbon.
When used to connect the same LCD and FPC, this one also had a connection resistance of 0.5Ω when measuring 1,000 electrode points.
/Pin or less, and the insulation resistance was 1010Ω or more.
［発明の効果コ
本発明は新規な異方導電膜およびその製造方法に関する
もので、これは前記したように電気絶縁性の高分子フィ
ルムに、該フィルムを貫通し、その上下面に突出するリ
ベット状の導通体を点状に配置してなる異方導電膜、お
よび電気絶縁性の高分子フィルムを金属支持体上に形成
し、このフィルム上に所定のパターニングで穴明けし、
この穴明は部下力の金属支持体をエツチングして孔部を
設け、ここに金属導電体を挿入し、ついでこれを金属支
持体から剥離して異方導電体を製造するというものであ
るが、この異方導電体は上記したように構成されている
のでこれをＬＣＤのガラス基板とＦＰＣの間に設置すれ
ばこの間の絶縁が高分子フィルムで確保されるし、ガラ
ス基板とＦＰＣはこのリベット状の導電体によって接触
導通されこの場合には従来公知の分散型異方導電膜で問
題点とされている二次凝集塊によるリーク発生、ヒート
シール部における接着剤のたまりによるリークの発生も
なく、さらには電極間に粒子がないので粒径のバラツキ
による不利もなくなるという有利性が与えられるし、上
記した製造方法によれば目的とする異方導電膜を容易に
、かつ確実に得ることができ、この場合穴明けのための
パターニングも任意のパターンで行なうことができるの
でＬＣＤの画素数増加に伴なう０．２ｍｍ以下という電
極ピッチにも充分対応できると共に、ＩＣチップなどの
接続コネクターを容易に製造することができるという有
利性が与えられる。[Effects of the Invention] The present invention relates to a novel anisotropic conductive film and a method for producing the same. An anisotropic conductive film having dotted conductors arranged in the shape of a shape, and an electrically insulating polymer film are formed on a metal support, holes are formed on this film in a predetermined pattern,
This drilling process involves etching the underlying metal support to create a hole, inserting the metal conductor into the hole, and then peeling it off from the metal support to produce an anisotropic conductor. Since this anisotropic conductor is constructed as described above, if it is installed between the glass substrate of the LCD and the FPC, the insulation between them will be ensured by the polymer film, and the glass substrate and the FPC will be connected to the rivet. In this case, there is no leakage due to secondary agglomerates, which has been a problem with conventionally known dispersed anisotropic conductive films, or leakage due to adhesive accumulation at the heat-sealed part. Furthermore, since there are no particles between the electrodes, there is no disadvantage due to variation in particle size, and the above-mentioned manufacturing method makes it possible to easily and reliably obtain the desired anisotropic conductive film. In this case, the patterning for making holes can be done in any pattern, so it can fully accommodate the electrode pitch of 0.2 mm or less due to the increase in the number of pixels on LCDs, and it can also be used to connect connectors such as IC chips. It has the advantage of being easy to manufacture.
第１図ａ） 、 ｃ）は本発明の異方導電膜の斜視図、
第１図ｂ）はその縦断面、第２図ａ）〜ｅ）、第３図、
ａ）〜ｅ）は本発明による異方導電膜製造方法の各工程
図、第４図ａ）〜Ｃ）は従来公知の分散型異方導電膜を
使用してＬＣＤガラス基板とＦＰＣとの接続図を示した
ものである。
特許出願人 信越ポリマー株式会社Figures 1a) and 1c) are perspective views of the anisotropic conductive film of the present invention,
Figure 1 b) is its longitudinal section, Figure 2 a) to e), Figure 3,
a) to e) are process diagrams of the anisotropic conductive film manufacturing method according to the present invention, and FIG. The figure is shown below. Patent applicant Shin-Etsu Polymer Co., Ltd.
Claims (1)
し、その上下面に突出するリベット状の導電体を点状に
配置してなることを特徴とする異方導電膜。 ２．１）電気絶縁性の高分子フィルムを金属支持体上に
形成する工程、 ２）該高分子フィルムに所定のパターニングで穴明け加
工する工程、 ３）該穴明け加工された高分子フィルム側から金属支持
体をエッチング加工する工程、 ４）該エッチング後にリベット状の金属導電体を電鋳法
によって該高分子フィルムの穴部に形成する工程、 ５）リベット状金属導電体を充填した該高分子フィルム
を金属支持体から剥離する工程 とからなることを特徴とする異方導電膜の製造方法。 ３、高分子フィルムに所定のパターニングする方法が該
金属支持体上に形成された高分子フィルム表面にレーザ
ー光を照射することにより行なわれる請求項２に記載し
た異方導電膜の製造方法。 ４、高分子フィルムに所定のパターニングする方法が、
該金属支持体上に形成された高分子フィルム表面にフォ
トレジスト層を形成する工程、該フォトレジストを露光
、現象してパターニングする工程、およびパターンに基
づいて該高分子フィルムをエッチングにより加工する工
程により行なわれる請求項２に記載した異方導電膜の製
造方法。[Claims] 1. An anisotropic conductor characterized by an electrically insulating polymer film having rivet-like conductors penetrating the film and protruding from the upper and lower surfaces arranged in dots. film. 2.1) A step of forming an electrically insulating polymer film on a metal support, 2) A step of drilling holes in the polymer film with a predetermined pattern, 3) A side of the hole-perforated polymer film 4) After the etching, forming a rivet-like metal conductor in the hole of the polymer film by electroforming; 5) The polymer film filled with the rivet-like metal conductor. 1. A method for producing an anisotropic conductive film, comprising the step of peeling a molecular film from a metal support. 3. The method for producing an anisotropic conductive film according to claim 2, wherein the method of patterning the polymer film in a predetermined manner is carried out by irradiating the surface of the polymer film formed on the metal support with a laser beam. 4. The method of patterning a polymer film in a predetermined manner is
A step of forming a photoresist layer on the surface of the polymer film formed on the metal support, a step of exposing and patterning the photoresist, and a step of processing the polymer film by etching based on the pattern. The method for manufacturing an anisotropic conductive film according to claim 2, which is carried out by.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2228820A JPH07105174B2 (en) | 1990-08-30 | 1990-08-30 | Method for manufacturing anisotropic conductive film |
| DE19914128261 DE4128261A1 (en) | 1990-08-30 | 1991-08-26 | ANISOTROP ELECTRICALLY CONDUCTING COMPOSITE MEMBRANE AND METHOD FOR THE PRODUCTION THEREOF |
| GB9118373A GB2248979A (en) | 1990-08-30 | 1991-08-27 | Anisotropically electroconductive membrane. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2228820A JPH07105174B2 (en) | 1990-08-30 | 1990-08-30 | Method for manufacturing anisotropic conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04109510A true JPH04109510A (en) | 1992-04-10 |
| JPH07105174B2 JPH07105174B2 (en) | 1995-11-13 |
Family
ID=16882376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2228820A Expired - Lifetime JPH07105174B2 (en) | 1990-08-30 | 1990-08-30 | Method for manufacturing anisotropic conductive film |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH07105174B2 (en) |
| DE (1) | DE4128261A1 (en) |
| GB (1) | GB2248979A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970048749A (en) * | 1995-12-28 | 1997-07-29 | 김광호 | Pad part of liquid crystal display element |
| US7001191B2 (en) | 2002-06-27 | 2006-02-21 | Shin-Etsu Polymer Co., Ltd. | Conductive contact elements and electric connectors |
| US7841862B2 (en) | 2003-02-28 | 2010-11-30 | J.S.T. Mfg. Co., Ltd. | Dielectric sheet |
| KR101040252B1 (en) * | 2009-06-16 | 2011-06-09 | 주식회사 엑스엘티 | Connecting Structure for Flexible Printed Circuit Board |
| CN108930054A (en) * | 2018-09-07 | 2018-12-04 | 中国石油大学(华东) | A kind of micro- 3D printing method of metal based on to self-assembled monolayers control technology |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6778967B1 (en) | 1999-10-05 | 2004-08-17 | Auto Gas Systems, Inc. | System and method of cross-selling products and increasing fuel sales at a fuel service station |
| EP1302563B1 (en) * | 2001-10-11 | 2006-05-24 | FRANZ Oberflächentechnik GmbH & Co KG | Production of metal conductive surface regions on coated light-metal alloys |
| JP5197741B2 (en) * | 2007-06-18 | 2013-05-15 | タイコ エレクトロニクス ネーデルランド ビーヴイ | Connector and circuit board for interconnecting surface mount devices |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6340218A (en) * | 1986-08-05 | 1988-02-20 | 住友スリ−エム株式会社 | Anisotropic conducting film and manufacture thereof |
| JPH03266306A (en) * | 1989-12-19 | 1991-11-27 | Nitto Denko Corp | Anisotropic conductive film |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8330391D0 (en) * | 1983-11-15 | 1983-12-21 | Gen Electric Co Plc | Electrical interface arrangement |
| CA1284523C (en) * | 1985-08-05 | 1991-05-28 | Leo G. Svendsen | Uniaxially electrically conductive articles with porous insulating substrate |
| EP0349756A3 (en) * | 1988-05-30 | 1991-03-20 | Canon Kabushiki Kaisha | Method of making electric circuit device |
-
1990
- 1990-08-30 JP JP2228820A patent/JPH07105174B2/en not_active Expired - Lifetime
-
1991
- 1991-08-26 DE DE19914128261 patent/DE4128261A1/en not_active Withdrawn
- 1991-08-27 GB GB9118373A patent/GB2248979A/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6340218A (en) * | 1986-08-05 | 1988-02-20 | 住友スリ−エム株式会社 | Anisotropic conducting film and manufacture thereof |
| JPH03266306A (en) * | 1989-12-19 | 1991-11-27 | Nitto Denko Corp | Anisotropic conductive film |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970048749A (en) * | 1995-12-28 | 1997-07-29 | 김광호 | Pad part of liquid crystal display element |
| US7001191B2 (en) | 2002-06-27 | 2006-02-21 | Shin-Etsu Polymer Co., Ltd. | Conductive contact elements and electric connectors |
| US7841862B2 (en) | 2003-02-28 | 2010-11-30 | J.S.T. Mfg. Co., Ltd. | Dielectric sheet |
| KR101040252B1 (en) * | 2009-06-16 | 2011-06-09 | 주식회사 엑스엘티 | Connecting Structure for Flexible Printed Circuit Board |
| CN108930054A (en) * | 2018-09-07 | 2018-12-04 | 中国石油大学(华东) | A kind of micro- 3D printing method of metal based on to self-assembled monolayers control technology |
Also Published As
| Publication number | Publication date |
|---|---|
| DE4128261A1 (en) | 1992-03-05 |
| GB9118373D0 (en) | 1991-10-09 |
| JPH07105174B2 (en) | 1995-11-13 |
| GB2248979A (en) | 1992-04-22 |
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