JPH0410625A - Structure of electrical wiring - Google Patents
Structure of electrical wiringInfo
- Publication number
- JPH0410625A JPH0410625A JP11466790A JP11466790A JPH0410625A JP H0410625 A JPH0410625 A JP H0410625A JP 11466790 A JP11466790 A JP 11466790A JP 11466790 A JP11466790 A JP 11466790A JP H0410625 A JPH0410625 A JP H0410625A
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- electrical wiring
- substrate
- specific resistance
- electrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009429 electrical wiring Methods 0.000 title claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 3
- 239000000126 substance Substances 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052804 chromium Inorganic materials 0.000 abstract 2
- 239000011651 chromium Substances 0.000 abstract 2
- 238000010897 surface acoustic wave method Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は弾性表面波素子、半導体集積回路等の薄膜機能
素子に用いられる電気配線の構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of electrical wiring used in thin film functional devices such as surface acoustic wave devices and semiconductor integrated circuits.
Ｃ従来の技術〕
従来は非電気伝導性の物質からなる基板上に、第１の金
属層のみを用いて一対もしくは多対の電極間を電気的に
接続する構造であった。C. Prior Art] Conventionally, a structure has been used in which a pair or multiple pairs of electrodes are electrically connected using only a first metal layer on a substrate made of a non-electrically conductive substance.
［発明が解決しようとする課題］
しかしながら、前述の従来技術においては、電気配線の
電気伝導度を高くするためには、第１の金属層を形成す
る際の温度を１５０℃以上にすることが必要であり、前
記基板がこのような高温に耐えられない材質では、第１
の金属層の形成温度を低くする必要があり、そのため第
１の金属層の電気伝導度を高くできないという課題を有
していた。[Problems to be Solved by the Invention] However, in the above-mentioned conventional technology, in order to increase the electrical conductivity of the electrical wiring, it is necessary to set the temperature when forming the first metal layer to 150° C. or higher. If the substrate is made of a material that cannot withstand such high temperatures, the first
It is necessary to lower the formation temperature of the first metal layer, which poses a problem in that the electric conductivity of the first metal layer cannot be increased.
そこで本発明の目的とするところは、第１の金属層を基
板上に形成する際の温度が、基板が耐えられる程度の温
度においても、高い電気伝導度を有する電気配線の構造
を提供するところにある。Therefore, an object of the present invention is to provide an electrical wiring structure that has high electrical conductivity even when the temperature at which the first metal layer is formed on the substrate is a temperature that the substrate can withstand. It is in.
本発明の電気配線の構造は、非電気伝導性の物質からな
る基板上に、第１の金属層を形成し、対もしくは多対の
電極間を電気的に接続する電気配線の構造において、前
記基板と前記第１の金属層との間に、第２の金属層を具
備した積層構造を持つことを特徴とする。The electrical wiring structure of the present invention is such that a first metal layer is formed on a substrate made of a non-electrically conductive substance, and electrically connects a pair or multiple pairs of electrodes. It is characterized by having a laminated structure including a second metal layer between the substrate and the first metal layer.
［実 施 例］
以下に本発明を実施例を用いて詳細に説明する。第１図
は本発明による一実施例の電極配線の構造を示す断面図
であり、第４図は本実施例の電気配線の構造を用いて作
成した弾性表面波フィルタの正面図である。また第２図
は従来技術による電気配線の構造を示す断面図である。[Examples] The present invention will be described in detail below using examples. FIG. 1 is a sectional view showing the structure of an electrode wiring according to an embodiment of the present invention, and FIG. 4 is a front view of a surface acoustic wave filter made using the structure of the electrical wiring of this embodiment. Further, FIG. 2 is a sectional view showing the structure of electrical wiring according to the prior art.
そして第３図は第１図の構造による電気配線と、第２図
の構造による電気配線の、各々の電気伝導度（第３図で
は比抵抗を用いて表現している。比抵抗が小さい程電気
伝導度は高い）と、第１の金属層を形成する際の温度と
の関係を示す特性図である。Fig. 3 shows the electrical conductivity (expressed using specific resistance in Fig. 3) of the electrical wiring with the structure shown in Fig. 1 and the electrical wiring with the structure shown in Fig. 2. FIG. 4 is a characteristic diagram showing the relationship between the electrical conductivity (high electrical conductivity) and the temperature when forming the first metal layer.
まず第１図の本実施例の構造を説明する。第１図の中の
第１の金属層１は純度９９．９９９％のＡｌである。ま
た基板３は人工水晶のウェハーである。そして第１の金
属層１と基板３の間に形成されている第２の金属層２は
Ｃｒである。本実施例のＡβ膜厚は約６０００人（オン
グストローム）であり、Ｃｒ膜厚は約１００人である。First, the structure of this embodiment shown in FIG. 1 will be explained. The first metal layer 1 in FIG. 1 is Al with a purity of 99.999%. Further, the substrate 3 is a wafer of artificial quartz. The second metal layer 2 formed between the first metal layer 1 and the substrate 3 is made of Cr. In this example, the Aβ film thickness is about 6,000 Angstroms, and the Cr film thickness is about 100 Angstroms.
これらの金属層の形成条件を下表１に示す。The conditions for forming these metal layers are shown in Table 1 below.
表Ｉ Ａｆｌ及びＣｒの形成条件
本実施例においてはＣｒを基板３上に第２の金属層２と
して形成した後に、Ａρを、第１の金属層１として形成
し、積層構造としている。Table I Conditions for Forming Afl and Cr In this example, after Cr is formed as the second metal layer 2 on the substrate 3, Aρ is formed as the first metal layer 1 to form a laminated structure.
本実施例における電気配線の電気伝導度（比抵抗で代用
、比抵抗が小さいと電気伝導度は大きい）と、金属層の
形成温度の関係を第３図の特性図に、従来技術による構
造のそれ（比抵抗）と比較して示す。第３図によれば従
来技術による電気配線の構造では１００℃でＡβを形成
した場合は１５０℃、２００℃で形成したものに比較し
て比抵抗が大きくなる、すなわち電気伝導度が小さくな
ることがわかる。これに対し本実施例によれば１００℃
、１５０℃、２００℃のいずれの形成温度においても比
抵抗がほぼ同一であり温度依存性がない。しかも、従来
技術の構造の比抵抗より小さく、すなわち電気伝導度が
大きいことがわかる。The relationship between the electrical conductivity of the electrical wiring (substituted by specific resistance; the smaller the specific resistance is, the greater the electrical conductivity) and the formation temperature of the metal layer in this example is shown in the characteristic diagram in Figure 3. It is shown in comparison with that (specific resistance). According to FIG. 3, in the conventional electrical wiring structure, when Aβ is formed at 100°C, the specific resistance becomes larger, that is, the electrical conductivity becomes smaller, compared to those formed at 150°C or 200°C. I understand. On the other hand, according to this example, 100°C
, 150° C., and 200° C., the specific resistance is almost the same and has no temperature dependence. Furthermore, it can be seen that the resistivity is lower than that of the structure of the prior art, that is, the electrical conductivity is high.
一方、本実施例の電気配線の構造を用いた、弾性表面波
フィルタの一例を第４図に示す。表１の形成条件により
作成し、形成温度を１００’Ｃとしている。第４図に示
すように共振子タイプの弾性表面波フィルタを作成する
と、従来技術による電気配線の構造により作成した同タ
イプのフィルタ（形成温度１００℃）に比べ、挿入損失
が３ｄＢ程小さくなる。これは電気配線の比抵抗が、第
３図に示すように、本実施例の電気配線の構造の比抵抗
が小さいためと考えられる。On the other hand, FIG. 4 shows an example of a surface acoustic wave filter using the electrical wiring structure of this embodiment. It was prepared according to the forming conditions shown in Table 1, and the forming temperature was 100'C. When a resonator type surface acoustic wave filter is manufactured as shown in FIG. 4, the insertion loss is approximately 3 dB lower than that of the same type of filter (formation temperature: 100° C.) manufactured using a conventional electrical wiring structure. This is considered to be because the specific resistance of the electrical wiring is small in the structure of the electrical wiring in this example, as shown in FIG.
このほかに第１図に示す本実施例の電気配線の構造は、
半導体集積回路、光−半導体集積回路、薄膜機能素子を
用いた各種センサー、薄膜磁気ヘッド、薄膜モータ、光
電スイッチング素子、光集積回路、液晶パネル等の、金
属層による電気的接続が必要な素子のすべてに応用可能
である。In addition, the structure of the electrical wiring of this embodiment shown in FIG.
Semiconductor integrated circuits, optical-semiconductor integrated circuits, various sensors using thin-film functional elements, thin-film magnetic heads, thin-film motors, photoelectric switching elements, optical integrated circuits, liquid crystal panels, and other devices that require electrical connection through metal layers. Applicable to everything.
さて、第１図に示す本実施例の電気配線の構造における
、第１の金属層ｌとしてのＡβ、第２の金属層２として
のＣｒの形成に真空蒸着法を用いたが、その他にスパッ
タリング装置、イオンプレティング装置等を用いること
もできる。またＡ℃の膜厚、Ｃｒの膜厚は各々本実施例
以外の厚みに設定することもできる。さらに表１に示し
た形成条件も本実施例に限られるわけではない。Now, in the structure of the electrical wiring of this example shown in FIG. 1, vacuum evaporation was used to form Aβ as the first metal layer 1 and Cr as the second metal layer 2, but sputtering was also used. A device, an ion plating device, etc. can also be used. Further, the film thickness of A° C. and the film thickness of Cr can each be set to thicknesses other than those in this embodiment. Further, the forming conditions shown in Table 1 are not limited to those of this example.
また第１の金属層にはＡｊ２にＳｉやＣｕを各々含有し
た合金でもよい。またＡｌの代わりにＣｕ層を第１の金
属層とすることもできる。Further, the first metal layer may be an alloy containing Si or Cu in Aj2. Moreover, a Cu layer can be used as the first metal layer instead of Al.
第２の金属層にはＣｒを用いたが、この他にＴｉを用い
ることも可能である。Although Cr was used for the second metal layer, it is also possible to use Ti.
基板はＳｌ、ガラス、Ｌ ｉ Ｔ ｉ Ｏａ等の酸化物
単結晶や、ポリイミドフィルム等を用いることができる
。さらに電気伝導性の物質からなる基板の上に非電導性
の物質を介在し、その上に本実施例の電気配線の構造を
形成することも可能である。As the substrate, oxide single crystals such as Sl, glass, L i T i Oa, polyimide films, etc. can be used. Furthermore, it is also possible to interpose a non-conductive material on a substrate made of an electrically conductive material, and form the electrical wiring structure of this embodiment thereon.
［発明の効果］
以上詳述したように本発明によれば、非電気伝導性の物
質からなる基板上に、第１の金属層を形成し、一対もし
くは多対の電極間を電気的に接続する電気配線の構造に
おいて、前記基板と前記第１の金属層との間に、第２の
金属層を具備した積層構造にすることにより、電気配線
の比抵抗を形成温度に依存することなく、１００℃とい
う、低温においても、十分小さくでき、したがって電気
伝導度を大きくできるという効果を有する。[Effects of the Invention] As detailed above, according to the present invention, a first metal layer is formed on a substrate made of a non-electrically conductive substance, and one or more pairs of electrodes are electrically connected. In the structure of the electric wiring, by forming a laminated structure including a second metal layer between the substrate and the first metal layer, the specific resistance of the electric wiring can be made independent of the formation temperature. It has the effect that it can be made sufficiently small even at a low temperature of 100° C., and therefore the electrical conductivity can be increased.
さらに基板の選定により、形成温度を１５０°Ｃ１２０
０℃にした場合も、従来技術による電気配線の構造の比
抵抗より小さくでき、電気伝導度を大きくできるという
効果を有する。Furthermore, depending on the selection of the substrate, the formation temperature can be adjusted to 150°C or 120°C.
Even when the temperature is 0° C., the resistivity can be lower than that of the electrical wiring structure according to the prior art, and the electrical conductivity can be increased.
第１図は、本発明による一実施例の電気配線の構造を示
す断面図。
第２図は、従来技術による電気配線の構造を示す断面図
。
第３図は、第１図の本実施例の電気配線の特性と第２図
の従来技術の電気配線の特性を比較する特性図。
第４図は、第１図の本実施例の電気配線の構造により作
成された、弾性表面波フィルタの正面図。
第１の金属層
第２の金属層
基板
従来技術の構造による、形成温度と
比抵抗の関係を示す折れ線グラフ
５・・・本実施例の構造による、形成温度と比抵抗の関
係を示す折れ線グラフ
６・・・第１図の本実施例の構造を用いた電極
７・・・素子基板
以上
出願人 セイコーエプソン株式会社FIG. 1 is a sectional view showing the structure of an electrical wiring according to an embodiment of the present invention. FIG. 2 is a sectional view showing the structure of electrical wiring according to the prior art. FIG. 3 is a characteristic diagram comparing the characteristics of the electrical wiring according to the present embodiment shown in FIG. 1 with the characteristics of the electrical wiring according to the prior art shown in FIG. FIG. 4 is a front view of a surface acoustic wave filter created using the electrical wiring structure of the present embodiment shown in FIG. 1. First metal layer Second metal layer substrate Line graph showing the relationship between forming temperature and specific resistance according to the structure of the prior art 5 Line graph showing the relationship between forming temperature and specific resistance according to the structure of this embodiment 6... Electrode using the structure of this embodiment shown in Figure 1 7... Element substrate Applicant: Seiko Epson Corporation
Claims (2)
属層を形成し、一対もしくは多対の電極間を電気的に接
続する電気配線の構造において、前記基板と前記第１の
金属層との間に、第２の金属層を具備した積層構造を持
つことを特徴とする、電気配線の構造。(1) In an electrical wiring structure in which a first metal layer is formed on a substrate made of a non-electrically conductive substance and electrically connects one or more pairs of electrodes, the substrate and the first An electrical wiring structure characterized by having a laminated structure including a second metal layer between the metal layer and the second metal layer.
を特徴とする請求項１記載の電気配線の構造。(2) The electrical wiring structure according to claim 1, wherein the first metal layer is an Al or Al alloy layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11466790A JPH0410625A (en) | 1990-04-27 | 1990-04-27 | Structure of electrical wiring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11466790A JPH0410625A (en) | 1990-04-27 | 1990-04-27 | Structure of electrical wiring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0410625A true JPH0410625A (en) | 1992-01-14 |
Family
ID=14643579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11466790A Pending JPH0410625A (en) | 1990-04-27 | 1990-04-27 | Structure of electrical wiring |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0410625A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6316860B1 (en) | 1997-09-22 | 2001-11-13 | Tdk Corporation | Surface acoustic wave device, and its fabrication process |
| US6903488B2 (en) | 2001-09-21 | 2005-06-07 | Tdk Corporation | SAW device and manufacturing method |
-
1990
- 1990-04-27 JP JP11466790A patent/JPH0410625A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6316860B1 (en) | 1997-09-22 | 2001-11-13 | Tdk Corporation | Surface acoustic wave device, and its fabrication process |
| US6903488B2 (en) | 2001-09-21 | 2005-06-07 | Tdk Corporation | SAW device and manufacturing method |
| US7467447B2 (en) | 2001-09-21 | 2008-12-23 | Tdk Corporation | Method of manufacturing a SAW device |
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