JPH04103724U - surface acoustic wave device - Google Patents
surface acoustic wave deviceInfo
- Publication number
- JPH04103724U JPH04103724U JP149991U JP149991U JPH04103724U JP H04103724 U JPH04103724 U JP H04103724U JP 149991 U JP149991 U JP 149991U JP 149991 U JP149991 U JP 149991U JP H04103724 U JPH04103724 U JP H04103724U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- piezoelectric substrate
- surface acoustic
- acoustic wave
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000011295 pitch Substances 0.000 claims abstract description 9
- 238000010586 diagram Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
(57)【要約】
【目的】 温度による周波数変化を抑えることができる
表面弾性波素子を実現する。
【構成】 圧電基板の同一面上に電極間ピッチが異なる
と共に電極膜厚の等しい複数の電極が並列して形成さ
れ、この複数の電極の内、第２番目以降の電極が形成さ
れた圧電基板部はそれぞれ電極が形成された部分を除い
た周囲を電極毎に削りしろを変えて削ることにより、第
１番目の電極が形成された圧電基板部と第２番目以降の
電極が形成された圧電基板部の電極周囲の圧電基板部と
に階段状の段差を付けたことを特徴としている。
(57) [Summary] [Purpose] To realize a surface acoustic wave device that can suppress frequency changes due to temperature. [Structure] A piezoelectric substrate in which a plurality of electrodes having different inter-electrode pitches and the same electrode film thickness are formed in parallel on the same surface of the piezoelectric substrate, and the second and subsequent electrodes among the plurality of electrodes are formed. The piezoelectric substrate portion on which the first electrode is formed and the piezoelectric substrate portion on which the second and subsequent electrodes are formed are made by cutting the surrounding area excluding the part where the electrode is formed with different cutting margins for each electrode. A feature is that a step-like step is provided between the substrate section and the piezoelectric substrate section around the electrode.
Description
【０００１】0001
本考案は、発振器の信号源として利用される表面弾性波素子に関し、特に使用 温度範囲が広い場合でも、変化量の少ない周波数信号を出力できるようにした表 面弾性波素子に関するものである。 This invention relates to a surface acoustic wave device used as a signal source for an oscillator. A table that allows output of frequency signals with little variation even over a wide temperature range. This relates to a surface acoustic wave element.
【０００２】0002
表面弾性波素子は圧電基板上に形成された励振電極によって電気信号を表面弾 性波に変換して基板表面を伝搬させるように構成したものであり、フィルタを初 めとして各種の応用がなされている。 A surface acoustic wave element transmits an electric signal to a surface acoustic wave using an excitation electrode formed on a piezoelectric substrate. It is configured to convert into a magnetic wave and propagate on the substrate surface, and the filter is used for the first time. Various applications have been made for this purpose.
【０００３】 図３は表面弾性波素子の従来例を示す構成図である。図３において、１１は共 振測定に対して弾性定数の良い、例えば水晶やＬi Ｎb Ｏ3 （ニオブ酸リチウム ）などから成る圧電基板、１２は表面弾性波励振用の櫛形電極、１３，１４は表 面弾性波を効率良く反射して定在波を起こすための反射電極であり、櫛形電極１ ２，反射電極１３，１４は圧電基板１１の表面弾性波が伝搬する面にエッチング などの技術を用いて形成されている。FIG. 3 is a configuration diagram showing a conventional example of a surface acoustic wave device. In FIG. 3, 11 is a piezoelectric substrate made of crystal or LiNbO3 (lithium niobate) having a good elastic constant for resonance measurement, 12 is a comb-shaped electrode for surface acoustic wave excitation, 13 , 14 are reflective electrodes that efficiently reflect surface acoustic waves to generate standing waves, and the comb-shaped electrodes 12 and reflective electrodes 13 and 14 are formed by etching or other techniques on the surface of the piezoelectric substrate 11 through which the surface acoustic waves propagate. It is formed using
【０００４】 このような構成において、図示しない信号源に接続された櫛形電極１２により 圧電基板１１上に表面弾性波を励起させ、反射電極１３，１４により表面弾性波 を効率良く反射して定在波を起こしている。この表面弾性波を用いた表面弾性波 素子にあっては、数十〜数百ＭHzという高い周波数で利用されており、その共振 周波数は櫛形電極１２の電極間ピッチで決定されている。0004 In such a configuration, the comb-shaped electrode 12 connected to a signal source (not shown) A surface acoustic wave is excited on the piezoelectric substrate 11, and the surface acoustic wave is excited by the reflective electrodes 13 and 14. It reflects efficiently and creates standing waves. Surface acoustic waves using this surface acoustic wave Elements are used at high frequencies of tens to hundreds of MHz, and their resonance The frequency is determined by the pitch between the comb-shaped electrodes 12.
【０００５】[0005]
しかしながら、上記従来技術に示すように表面弾性波素子は圧電基板を用いた 素子であり、この圧電基板の膨脹係数および圧電定数がそれぞれに温度係数を持 つため、温度により周波数が変化するという課題があった。 However, as shown in the above-mentioned conventional technology, the surface acoustic wave device uses a piezoelectric substrate. The expansion coefficient and piezoelectric constant of this piezoelectric substrate each have their own temperature coefficients. Therefore, there was a problem that the frequency changed depending on the temperature.
【０００６】 本考案は、上記従来技術の課題を踏まえて成されたものであり、一個の圧電基 板上に温度特性の異なる複数の表面弾性波素子を形成することにより、温度によ る周波数変化を抑えることができる表面弾性波素子を提供することを目的とした ものである。[0006] The present invention was developed based on the above-mentioned problems of the conventional technology. By forming multiple surface acoustic wave elements with different temperature characteristics on a plate, The aim is to provide a surface acoustic wave device that can suppress frequency changes. It is something.
【０００７】[0007]
上記課題を解決するための本考案の構成は、圧電基板の同一面上に電極間ピッ チが異なると共に電極膜厚の等しい複数の電極が並列して形成され、この複数の 電極の内、第２番目以降の電極が形成された圧電基板部はそれぞれ電極が形成さ れた部分を除いた周囲を電極毎に削りしろを変えて削ることにより、第１番目の 電極が形成された圧電基板部と第２番目以降の電極が形成された圧電基板部の電 極周囲の圧電基板部とに階段状の段差を付けたことを特徴とするものである。 The structure of the present invention to solve the above problem is to provide an inter-electrode pitch on the same surface of the piezoelectric substrate. A plurality of electrodes with different thicknesses and the same electrode film thickness are formed in parallel. Among the electrodes, the piezoelectric substrate portion on which the second and subsequent electrodes are formed is By changing the cutting margin for each electrode and cutting the surrounding area excluding the removed part, the first The voltage of the piezoelectric substrate portion where the electrode is formed and the piezoelectric substrate portion where the second and subsequent electrodes are formed is It is characterized by having a step-like step between the piezoelectric substrate portion around the pole.
【０００８】[0008]
本考案によれば、異なる温度特性を持つ表面弾性波素子を同一基板上に形成し ている。したがって、温度範囲によって、表面弾性波素子を選択できるため、周 波数変化を抑えることができる。 According to the present invention, surface acoustic wave elements with different temperature characteristics are formed on the same substrate. ing. Therefore, since surface acoustic wave elements can be selected depending on the temperature range, Wave number changes can be suppressed.
【０００９】[0009]
以下、本考案を図面に基づいて説明する。 図１は本考案の表面弾性波素子の一実施例を示す構成図であり、（イ）図は全 体構成図、（ロ）図は第１の表面弾性波共振子用電極が形成された圧電基板部の 断面図、（ハ）図は第２の表面弾性波共振子用電極が形成された圧電基板部の断 面図である。図１において、１４（１４ａ，１４ｂ）は水晶やＬi Ｎb Ｏ3 （ニ オブ酸リチウム）などから成る圧電基板であり、この圧電基板１４の同一面上に は電極間ピッチは異なるが電極膜厚の等しい第１，第２の表面弾性波共振子用電 極１５，１６が形成されている。また、第２の表面弾性波共振子用電極１６が形 成された圧電基板部１４ｂは第２の表面弾性波共振子用電極１６が形成された部 分だけを残して、周囲が削られており、第１の表面弾性波共振子用電極１５が形 成された圧電基板部１４ａと前記第２の表面弾性波共振子用電極１６が形成され た圧電基板部１４ｂの電極周囲の圧電基板部１４ｂとに段差を付けている。Hereinafter, the present invention will be explained based on the drawings. FIG. 1 is a configuration diagram showing an embodiment of the surface acoustic wave device of the present invention, in which (a) is an overall configuration diagram, and (b) is a piezoelectric wave device on which a first surface acoustic wave resonator electrode is formed. A cross-sectional view of the substrate part, (c) is a cross-sectional view of the piezoelectric substrate part on which a second surface acoustic wave resonator electrode is formed. In FIG. 1, 14 (14a, 14b) is a piezoelectric substrate made of crystal, L i N b O 3 (lithium niobate), etc. On the same surface of this piezoelectric substrate 14, there are electrode films, although the pitch between the electrodes is different. First and second surface acoustic wave resonator electrodes 15 and 16 having the same thickness are formed. Further, the piezoelectric substrate portion 14b on which the second surface acoustic wave resonator electrode 16 is formed is shaved around the circumference, leaving only the portion where the second surface acoustic wave resonator electrode 16 is formed. The piezoelectric substrate portion 14b around the electrodes of the piezoelectric substrate portion 14a on which the first surface acoustic wave resonator electrode 15 is formed and the piezoelectric substrate portion 14b on which the second surface acoustic wave resonator electrode 16 is formed. There are steps.
【００１０】 このような構成において、第１，第２の表面弾性波共振子用電極１５，１６に よる表面弾性波の動作は図３装置と同様であるため、その説明は省略するが、こ こで、図１（ロ）および（ハ）に示すように、水晶からなる同一圧電基板１４上 に形成された電極膜厚ｈm が同じで電極間ピッチが異なる２種類の表面弾性波共 振子用電極１５，１６において、それぞれ電極間ピッチをＬ1 ，Ｌ2 、共振周波 数をｆ1 ，ｆ2 、表面波速度をｖ1 ，ｖ2 とすると、次式が成り立つ。 ｆ1 ＝ｖ1 ／Ｌ1 ｆ2 ＝ｖ2 ／Ｌ2 In such a configuration, the operation of the surface acoustic wave by the first and second surface acoustic wave resonator electrodes 15 and 16 is the same as that of the device shown in FIG. , as shown in FIGS. 1(b) and 1(c), two types of surface acoustic wave resonator electrodes are formed on the same piezoelectric substrate 14 made of quartz and have the same electrode film thickness h m but different interelectrode pitches. 15 and 16, the following equation holds true when the interelectrode pitch is L 1 and L 2 , the resonance frequency is f 1 and f 2 , and the surface wave velocity is v 1 and v 2 . f 1 =v 1 /L 1 f 2 =v 2 /L 2
【００１１】 ここで、圧電基板１４の材料としてＳＴカット水晶基板を用いると、周波数温 度特性は、頂点温度を持った２次曲線で近似できる。図１（ハ）に示すように、 表面弾性波共振子用電極１６の周囲の圧電基板をｈg だけ削った場合、表面弾性 波共振子用電極１５，１６の頂点温度Ｔ1 ，Ｔ2 は次のようになる。[0011]Here, if an ST-cut crystal substrate is used as the material of the piezoelectric substrate 14, the frequency-temperature characteristic can be approximated by a quadratic curve having a vertex temperature. As shown in FIG. 1(C), when the piezoelectric substrate around the surface acoustic wave resonator electrode 16 is shaved by h g , the peak temperatures T 1 and T 2 of the surface acoustic wave resonator electrodes 15 and 16 are as follows. It will look like this:
【００１２】 表面弾性波共振子用電極１５，１６の電極間ピッチをＬ1 ＞Ｌ2 とすると、削 りしろｈg ＝０の場合では、同一水晶、同一電極膜厚のため、表面波速度はｖ1 ＝ｖ2 となり、図２（イ）に示すように、共振周波数はｆ1 ＜ｆ2 、頂点温度は Ｔ1 ＝Ｔ2 となる。[0012] When the pitch between the electrodes 15 and 16 for the surface acoustic wave resonator is set to L 1 >L 2 , when the cutting margin h g =0, the surface wave velocity is the same because of the same crystal and the same electrode film thickness. v 1 =v 2 , and as shown in FIG. 2(a), the resonance frequency is f 1 <f 2 and the peak temperature is T 1 =T 2 .
【００１３】 一方、削りしろｈg を削った場合では、質量付加効果により、表面波速度はｖ 1 ＞ｖ2 、頂点温度はＴ1 ＞Ｔ2 となるため、共振周波数がｆ1 ＝ｆ2 となるよ うに削りしろｈg を削った場合、図２（ロ）に示すようになり、共振周波数ｆ1 とｆ2 を切り換えることにより、より広い温度範囲で周波数変化を小さく抑える ことができる。[0013] On the other hand, sharpen itgIn the case of cutting, the surface wave velocity becomes v due to the mass addition effect. 1 >v2, the peak temperature is T1＞T2Therefore, the resonant frequency is f1=f2It will be Shave the sea urchingIf you shave off the resonant frequency f1 and f2By switching , frequency changes can be kept small over a wider temperature range. be able to.
【００１４】 なお、上記実施例において、圧電基板１４上に形成した表面弾性波共振子用電 極は２つに限るものではなく、電極間ピッチは異なるが電極膜厚の等しい３つ以 上の表面弾性波共振子用電極を電極周囲の圧電基板部にそれぞれ段差を設けて構 成しても良く、更に広い温度範囲で使用することができる。[0014] In the above embodiment, the surface acoustic wave resonator electrode formed on the piezoelectric substrate 14 The number of electrodes is not limited to two, but three or more with different electrode pitches but the same electrode film thickness. The surface acoustic wave resonator electrodes above are constructed by providing steps on the piezoelectric substrate around the electrodes. It can be used in a wider temperature range.
【００１５】[0015]
以上、実施例と共に具体的に説明したように、本考案によれば、異なる温度特 性を持つ表面弾性波素子を同一基板上に形成している。したがって、温度範囲に よって表面弾性波素子を選択できるため、周波数変化を抑える効果を有する表面 弾性波素子を実現できる。 As specifically explained above together with the embodiments, according to the present invention, different temperature characteristics can be achieved. surface acoustic wave elements with characteristics are formed on the same substrate. Therefore, in the temperature range Therefore, surface acoustic wave elements can be selected, so surface acoustic wave elements can be selected that have the effect of suppressing frequency changes. Acoustic wave elements can be realized.
【図１】本考案の表面弾性波素子の一実施例を示す構成
図である。FIG. 1 is a configuration diagram showing an embodiment of a surface acoustic wave device of the present invention.
【図２】図１装置の動作を説明するための図である。FIG. 2 is a diagram for explaining the operation of the device shown in FIG.
【図３】表面弾性波素子の従来例を示す構成図である。FIG. 3 is a configuration diagram showing a conventional example of a surface acoustic wave element.
１４，１４ａ，１４ｂ 圧電基板 １５，１６ 表面弾性波共振子用電極 14, 14a, 14b piezoelectric substrate 15,16 Electrode for surface acoustic wave resonator
Claims (1)
なると共に電極膜厚の等しい複数の電極が並列して形成
され、この複数の電極の内、第２番目以降の電極が形成
された圧電基板部はそれぞれ電極が形成された部分を除
いた周囲を電極毎に削りしろを変えて削ることにより、
第１番目の電極が形成された圧電基板部と第２番目以降
の電極が形成された圧電基板部の電極周囲の圧電基板部
とに階段状の段差を付けたことを特徴とする表面弾性波
素子。[Claim 1] A plurality of electrodes having different inter-electrode pitches and the same electrode film thickness are formed in parallel on the same surface of a piezoelectric substrate, and among the plurality of electrodes, the second and subsequent electrodes are formed. By cutting the circumference of the piezoelectric substrate part except for the part where each electrode is formed, changing the cutting allowance for each electrode,
A surface acoustic wave characterized by providing a step-like step between the piezoelectric substrate portion on which the first electrode is formed and the piezoelectric substrate portion around the electrode on which the second and subsequent electrodes are formed. element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP149991U JPH04103724U (en) | 1991-01-22 | 1991-01-22 | surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP149991U JPH04103724U (en) | 1991-01-22 | 1991-01-22 | surface acoustic wave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04103724U true JPH04103724U (en) | 1992-09-07 |
Family
ID=31728881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP149991U Withdrawn JPH04103724U (en) | 1991-01-22 | 1991-01-22 | surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04103724U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010103621A (en) * | 2008-10-21 | 2010-05-06 | Murata Mfg Co Ltd | Elastic wave apparatus |
-
1991
- 1991-01-22 JP JP149991U patent/JPH04103724U/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010103621A (en) * | 2008-10-21 | 2010-05-06 | Murata Mfg Co Ltd | Elastic wave apparatus |
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