JPH0385715A - Method of forming electrode of electronic component - Google Patents
Method of forming electrode of electronic componentInfo
- Publication number
- JPH0385715A JPH0385715A JP1223521A JP22352189A JPH0385715A JP H0385715 A JPH0385715 A JP H0385715A JP 1223521 A JP1223521 A JP 1223521A JP 22352189 A JP22352189 A JP 22352189A JP H0385715 A JPH0385715 A JP H0385715A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- electrode
- layer
- electronic component
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 27
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 43
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 22
- 239000000956 alloy Substances 0.000 claims abstract description 22
- 229910017518 Cu Zn Inorganic materials 0.000 claims abstract description 11
- 229910017752 Cu-Zn Inorganic materials 0.000 claims abstract description 11
- 229910017943 Cu—Zn Inorganic materials 0.000 claims abstract description 11
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910001128 Sn alloy Inorganic materials 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 238000007751 thermal spraying Methods 0.000 claims description 28
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 230000001603 reducing effect Effects 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 4
- 150000007524 organic acids Chemical class 0.000 abstract description 3
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 229910020816 Sn Pb Inorganic materials 0.000 abstract 1
- 229910020922 Sn-Pb Inorganic materials 0.000 abstract 1
- 229910008783 Sn—Pb Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 44
- 229910000679 solder Inorganic materials 0.000 description 12
- 238000005476 soldering Methods 0.000 description 11
- 239000002923 metal particle Substances 0.000 description 6
- 229910000978 Pb alloy Inorganic materials 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 4
- 229910017944 Ag—Cu Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、電子部品の電極を溶射にて形成する方法に関
する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for forming electrodes of electronic components by thermal spraying.
従来の技術
従来、フィルムコンデンサ等の電子部品の電極形成は、
Ｃｕ、Ｚｎ、Ｓｎ、Ｐｂ等を主成分とした溶射材を用い
ている（例えば、特公昭５３２９２１８号公報、特公昭
５３−２９２１９号公報等参照）。Conventional technology Conventionally, electrode formation for electronic components such as film capacitors is
A thermal spraying material containing Cu, Zn, Sn, Pb, etc. as main components is used (see, for example, Japanese Patent Publication No. 5329218, Japanese Patent Publication No. 53-29219, etc.).
発明が解決しようとする課題
電子部品の電極を溶射にて形成する場合、従来、Ｚｎ合
金または５ｎ−Ｐｂ合金等の線材をアークまたはプラズ
マ等で溶融させ、高速のエアーで吹付け、電子部品の当
該位置に付着させるという方法がとられるが、その際上
記金属が溶融した粉末状態で飛散するときの粒径は数μ
〜数１０μと微粒であるため、粉末の表面が容易に酸化
される。Problems to be Solved by the Invention When forming electrodes of electronic components by thermal spraying, conventionally, wire rods such as Zn alloy or 5n-Pb alloy are melted with an arc or plasma, and then sprayed with high-speed air to form the electrodes of electronic components. A method is used to attach the metal to the relevant location, but in this case, when the metal is scattered in a molten powder state, the particle size is several microns.
The surface of the powder is easily oxidized because it is a fine particle with a size of several tens of microns.
そのため、溶射により形成した電極は半田付性が非常に
悪いという問題がある。Therefore, there is a problem that electrodes formed by thermal spraying have very poor solderability.
そこで、電極の半田付性を向上させるため、溶射後、溶
射金属の表面を還元し、溶射金属の表面を半田付性のよ
い金属、例えば半田をコーティングすれば電極としての
半田付性は若干向上する。Therefore, in order to improve the solderability of the electrode, the surface of the sprayed metal is reduced after spraying, and the surface of the sprayed metal is coated with a metal with good solderability, such as solder, which will slightly improve the solderability of the electrode. do.
すなわち、第７図（ａ）に示すように、電子部品の素子
１６に溶射金属１７を溶射した後、溶射金属の表面を研
磨し、さらにフラックス等により、還元すると、溶射金
属の内部１７パは酸化物の多い層であるが、表面１７′
は還元された金属の状態となる。この状態で半田１８を
コーティングし、半田デイツプを行なう。That is, as shown in FIG. 7(a), after the sprayed metal 17 is sprayed onto the element 16 of the electronic component, the surface of the sprayed metal is polished and further reduced with flux or the like, so that the interior 17 of the sprayed metal is Although it is a layer with a lot of oxide, the surface 17'
is in the reduced metal state. In this state, solder 18 is coated and solder dip is performed.
このようにすると、半田デイツプの回数が１〜２回まで
は、第７・図（ｂ）のように基板１９との間にきれいな
半田フィレット１８′を形成することができる。In this way, a clean solder fillet 18' can be formed between the solder fillet 18' and the substrate 19 as shown in FIG. 7 (b) until the number of solder dips is 1 to 2 times.
しかし、半田デイツプを２〜３回以上行なうと、還元さ
れた金属層１７′は、半田中に拡散し消失していく。そ
のため半田付状態は、第７図（Ｃ）のように不充分な半
田フィレット１８“の状態となり半田付不良を生じるこ
とになる。However, if solder dipping is performed two or three times or more, the reduced metal layer 17' diffuses into the solder and disappears. Therefore, the soldering state is such that the solder fillet 18'' is insufficient as shown in FIG. 7(C), resulting in poor soldering.
電子部品には、最近の高密度・高信頼化の実装技術の要
望に伴い、半田デイツプ３回までは良好な半田付状態を
得る半田付性が求められており、以上述べた従来の溶射
による電極形成では、充分な半田付性が得られていなか
った。With the recent demand for high-density, high-reliability mounting technology, electronic components are required to have good solderability that allows for up to three solder dips. In electrode formation, sufficient solderability was not obtained.
従来の溶射による電極形成法では、溶射金属粒子の表面
が酸化された状態で、電極を形成していくため、粒子間
の結合強度、すなわち電極としての強度が弱いという問
題点もあった。In the conventional method of forming electrodes by thermal spraying, the electrodes are formed with the surfaces of the sprayed metal particles in an oxidized state, so there is a problem that the bonding strength between the particles, that is, the strength as an electrode is weak.
本発明は、電子部品の電気を溶射にて形成する場合、従
来の方法では上記のように、電極としての半田付性が悪
く、また電極としての強度も弱いという問題点を解決す
るための電極形成方法を提供することを目的としている
。The present invention provides an electrode to solve the problem that when forming electronic parts by thermal spraying, the conventional method has poor solderability as an electrode and weak electrode strength. The purpose is to provide a formation method.
課題を解決するための手段
上記目的を達成するために、本発明の電極形成法におい
ては、０．１〜１０重量％のＰを含むＣｕ合金あるいは
Ａｇを６０重量％以上含むＣｕ合金を溶射材として用い
る。これにより溶射時に金属粒子の表面の酸化を抑える
ことができ、電極としての半田付性の向上と電極強度の
向上が計れる。Means for Solving the Problems In order to achieve the above object, in the electrode forming method of the present invention, a Cu alloy containing 0.1 to 10% by weight of P or a Cu alloy containing 60% by weight or more of Ag is used as a thermal spraying material. used as This makes it possible to suppress oxidation of the surface of the metal particles during thermal spraying, thereby improving the solderability and strength of the electrode.
電極の特性あるいは半田付性をより向上させるため電極
構造を多層にする。たとえば電極の最内層は、電子部品
の素子と電位差の少ない金属、例えは、Ｃｕ−Ｚｎ合金
とし、次に中間層は、Ｐを含むＣｕ合金、あるいはＡｇ
を６０重量％以上含むＣｕ合金とし、最外層は５ｎ−Ｐ
ｂ合金とする。In order to further improve electrode characteristics or solderability, the electrode structure is multilayered. For example, the innermost layer of the electrode is made of a metal that has a small potential difference with the element of the electronic component, such as a Cu-Zn alloy, and the intermediate layer is made of a Cu alloy containing P or Ag.
Cu alloy containing 60% by weight or more, and the outermost layer is 5n-P
B alloy.
作 用
溶射金属としてＰを含むＣｕ合金を用いれば電極の酸化
が押えられる理由を次に述べる。The reason why electrode oxidation can be suppressed by using a P-containing Cu alloy as the sprayed metal will be described below.
Ｐを含むＣｕ合金が溶射時に溶融したとき、Ｐは優先的
に０２と反応するため、溶射金属のＣｕ等の酸化を抑制
あるいはＣｕ等の酸化物を還元する。すなわち、
４Ｐ＋Ｃｕ＋５０−＋２Ｐ２０５＋Ｃｕ２ Ｐ ＋ ５
Ｃｕ Ｏ＋Ｐ ２０ ｓ ＋ ５ Ｃｕ等の反応が生
しる。When a Cu alloy containing P is melted during thermal spraying, P preferentially reacts with 02, so oxidation of Cu, etc. in the thermal sprayed metal is suppressed or oxides of Cu, etc. are reduced. That is, 4P+Cu+50-+2P205+Cu2P+5
A reaction such as CuO+P20s+5Cu occurs.
また、溶射金属としてＡｇを６０重量％以上含む場合、
Ａｇは溶射時に殆ど酸化されないため、形成された電極
は半田付性が良好であり、また溶射粒子間の結合強度も
高いものが得られる。In addition, when the sprayed metal contains 60% by weight or more of Ag,
Since Ag is hardly oxidized during thermal spraying, the formed electrode has good solderability and also has high bonding strength between the thermal spray particles.
実 施 例
以下、本発明の実施例について図面を参照しながら説明
する。Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の第１実施例において、そのフィルムコ
ンデンザに溶射による電極を形成した状態を示す。第１
図において、１はフィルム、２はフィルム上に形成され
たＡＩ薄膜であり、フイルムコンデンザの素子１３を構
成している。３は溶射により形成したＰ−Ｃｕ合金又は
Ｐ−ＡｇＣｕ合金の電極である。溶射材としては表１の
■、■に示す合金のワイヤ材を用い、アーク溶射あるい
はプラズマ溶射により４の矢印の方向から溶射を行った
ものである。FIG. 1 shows a first embodiment of the present invention in which electrodes are formed on the film capacitor by thermal spraying. 1st
In the figure, 1 is a film, 2 is an AI thin film formed on the film, and constitutes an element 13 of a film capacitor. 3 is an electrode made of P-Cu alloy or P-AgCu alloy formed by thermal spraying. Wire materials of alloys shown in Table 1 (1) and (2) were used as thermal spraying materials, and thermal spraying was performed in the direction of arrow 4 by arc spraying or plasma spraying.
表１
の酸化を最少限に抑える量であることが必要である。そ
のため溶射時の雰囲気により必要なＰの量は異なってく
る。溶射をＮ２等の非酸化性カスにて行なう場合、ある
いは減圧容器中で非酸化性カスにて行なう場合、Ｐｆｆ
ｉは、０．１〜０．５重量％あれば充分である。しかし
、通常のアーク溶剤のようにエアにて行なう場合は、Ｐ
量を多くする必要がある。但しＰ量が１０ ｗ ｔ％を
越えると、Ｐ−Ｃｕ合金として脆くなるため、ワイヤ材
として加工が困難になり実用的てなくなる。またＰ量が
多くなるほと、溶射粒子の凝固収縮量が多くなり、溶射
層の残留応力および変形が多くなり、実用的でなくなる
。溶射て実用的なＰ量の範囲は０．１〜１０ｗｔ％と限
定される。It is necessary that the amount minimizes the oxidation shown in Table 1. Therefore, the required amount of P varies depending on the atmosphere during thermal spraying. When thermal spraying is performed with non-oxidizing gas such as N2, or when performing spraying with non-oxidizing gas in a vacuum vessel, Pff
It is sufficient for i to be 0.1 to 0.5% by weight. However, when using air like a normal arc solvent, P
It is necessary to increase the amount. However, if the amount of P exceeds 10 wt%, the P-Cu alloy becomes brittle and difficult to process as a wire material, making it impractical. Further, as the amount of P increases, the amount of solidification shrinkage of the sprayed particles increases, and the residual stress and deformation of the sprayed layer increases, making it impractical. The practical range of P amount for thermal spraying is limited to 0.1 to 10 wt%.
また、Ｐ−Ｃｕ合金の残留応力、溶射時の変形量は、溶
射前のＰ−Ｃｕ合金に含まれるＰ量により異なるが、残
留応力及び溶射時の変形を実用レベルに押さえるには、
第１図に示す電極３の厚さ５を０．７ｍｍ以下にするこ
とが有効である。In addition, the residual stress of the P-Cu alloy and the amount of deformation during thermal spraying vary depending on the amount of P contained in the P-Cu alloy before thermal spraying, but in order to suppress the residual stress and deformation during thermal spraying to a practical level,
It is effective to make the thickness 5 of the electrode 3 shown in FIG. 1 0.7 mm or less.
表１の■て示ずようにＰ−ＣｕにＡｇを加えると、融点
を下げると共に、溶射金属粒子の酸化をより少なくする
ことができる。特に７Ｐ−２０Ａｇ−７３Ｃｕは三元共
晶で、融点が６４６℃と低いため、低温溶射が可能であ
る。When Ag is added to P-Cu as shown in Table 1, it is possible to lower the melting point and further reduce oxidation of the sprayed metal particles. In particular, 7P-20Ag-73Cu is a ternary eutectic and has a low melting point of 646°C, so low-temperature spraying is possible.
第２図は本発明の第２の実施例で、１０は電子部品の素
子１３と電位差の少ない溶射金属層、例えば素子１３の
主構成要素がＡＩ薄膜２であればＣｕ−Ｚｎ合金層であ
る。次にＰ−Ｃｕ合金３を溶射し、さらにその上にＳｎ
あるいは５ｎ−Ｐｂ合金のコーティング層１１を形成し
たものである。FIG. 2 shows a second embodiment of the present invention, in which 10 is a sprayed metal layer having a small potential difference with the element 13 of the electronic component, for example, if the main component of the element 13 is the AI thin film 2, it is a Cu-Zn alloy layer. . Next, P-Cu alloy 3 is thermally sprayed, and then Sn
Alternatively, a coating layer 11 of 5n-Pb alloy is formed.
素子に接する溶射金属を素子と電位差の少ない金属にす
るのは局所電池作用による電蝕を防ぐためてあり、電極
の最外層に５ｎ−Ｐｂ合金をコーティングすることによ
りプリント基板等への実装時の半田付性をより向上させ
ることができる。The reason why the sprayed metal in contact with the element is a metal that has a small potential difference with the element is to prevent galvanic corrosion due to local battery action, and by coating the outermost layer of the electrode with 5n-Pb alloy, it can be easily mounted on a printed circuit board, etc. Solderability can be further improved.
なお、電極の最外層にＳｎ合金をコーティングする方法
としては、第２図のＰ−Ｃｕ合金の溶射層３の表面の凹
凸が０．５ｍ、ｍ以下になるよう研磨した後、Ｓｎ合金
を溶融浸漬でコーティングする方法、あるいはＰ−Ｃｕ
合金の溶射層の表面を研磨後、有機酸あるいはフラック
スで表面を還元し、Ｓｎ合金の溶融浸漬でコーティング
する方法が望ましい。The method for coating the outermost layer of the electrode with the Sn alloy is to polish the surface of the thermally sprayed layer 3 of P-Cu alloy as shown in Fig. 2 so that the unevenness is 0.5 m or less, and then melt the Sn alloy. Dip coating method or P-Cu
It is preferable to polish the surface of the sprayed alloy layer, reduce the surface with an organic acid or flux, and then coat the surface by melt dipping the Sn alloy.
Ｐ−Ｃｕ合金の溶射層３は、前述のようにＰの還元作用
により酸化が非常に少ないので、５ｎＰｂ合金と合金層
をつくった状態となる。そのため、実装時のデイツプ半
田付を３回以上繰り返しても半田付性の劣化はない。The sprayed layer 3 of the P-Cu alloy has very little oxidation due to the reducing action of P as described above, so it forms an alloy layer with the 5nPb alloy. Therefore, even if dip soldering during mounting is repeated three or more times, there is no deterioration in solderability.
なお、電子部品の素子とＰ−Ｃｕ合金の電位差が小さい
場合、たとえば０．３Ｖ以下の場合は、第２図の如く３
層にせず、第１図の溶射層３の」二に、５ｎ−Ｐｂ合金
をコーティングすればよい。Note that if the potential difference between the element of the electronic component and the P-Cu alloy is small, for example, 0.3V or less, the
Instead of forming a layer, the 5n-Pb alloy may be coated on the second side of the thermal sprayed layer 3 in FIG.
第５図は電極を複数の溶射金属層て形成する場合、Ｐ−
Ｃｕ合金層の下の溶射金属層１０の表面の凹凸をＰ−Ｃ
ｕ合金層の厚さ以下にする必要性を説明するための図を
示す。電子部品の所定の場所のみに溶射金属層を形成す
るには、遮蔽板等を用いるので、溶射金属層には同図に
示すような凹凸１２が生しる。この凹凸がある状態てＰ
−Ｃｕ合金を溶射し、Ｐ−Ｃｕ合金の表面を所定の形状
０
に研磨すると、電極の表面にＰ−Ｃｕ合金以外の合金層
が現れ、半田付性を阻害する。そのため、同図Ａ−Ａ’
、Ｂ−Ｂ’の一点鎖線の如く、研磨あるいはパリ取り
を行ない、溶射合金層１０の表面の凹凸がＰ−Ｃｕ合金
層の厚さ以下にすることが不可欠となる。Figure 5 shows the P-
The unevenness of the surface of the sprayed metal layer 10 under the Cu alloy layer is P-C.
A diagram for explaining the necessity of making the thickness less than or equal to the thickness of the u alloy layer is shown. Since a shielding plate or the like is used to form the sprayed metal layer only at a predetermined location of the electronic component, the sprayed metal layer has irregularities 12 as shown in the figure. In this uneven state P
When a -Cu alloy is thermally sprayed and the surface of the P-Cu alloy is polished into a predetermined shape, an alloy layer other than the P-Cu alloy appears on the surface of the electrode, which inhibits solderability. Therefore, the figure A-A'
, B-B', it is essential to perform polishing or deburring to make the surface irregularities of the sprayed alloy layer 10 less than the thickness of the P-Cu alloy layer.
第３図は本発明の第３の実施例を示す図で、電子部品の
素子１３にＣｕ−Ｚｎの溶射層１０、その上にＡｇを２
０重量％以上含むＣｕ合金層１４を溶射し、さらにＰ−
Ｃｕ合金層３、Ｓｎ合金のコーティング層１１で電極を
形成する方法を示す。FIG. 3 is a diagram showing a third embodiment of the present invention, in which an element 13 of an electronic component is coated with a Cu-Zn sprayed layer 10, and Ag is coated on top of the thermally sprayed layer 10.
A Cu alloy layer 14 containing 0% by weight or more is thermally sprayed, and further P-
A method of forming an electrode using a Cu alloy layer 3 and a Sn alloy coating layer 11 will be shown.
溶射したＣｕ−Ｚｎ合金層１０は比較的酸化が大きいた
め、Ｃｕ−Ｚｎ溶射金属粒子間の結合力が弱い。そのた
め、Ｃｕ−Ｚｎの溶射層に直接厚＜Ｐ−Ｃｕ合金を溶射
すると、Ｐ−Ｃｕ合金層の凝固収縮力で、Ｃｕ−Ｚｎ溶
射層の内部にクラックが生じやすい。クラックを防止す
るには本実施例のように酸化の少ないＡｇ−Ｃｕ合金層
１４を中間層として形成することが、有効な手段となる
。Since the thermally sprayed Cu-Zn alloy layer 10 is relatively heavily oxidized, the bonding force between the Cu-Zn thermally sprayed metal particles is weak. Therefore, if a thickness<P-Cu alloy is directly sprayed onto a Cu-Zn sprayed layer, cracks are likely to occur inside the Cu-Zn sprayed layer due to the solidification shrinkage force of the P-Cu alloy layer. In order to prevent cracks, it is effective to form the Ag-Cu alloy layer 14, which is less oxidized, as an intermediate layer as in this embodiment.
Ａｇ−Ｃｕ合金の例として、表１の■の合金が上げられ
る。As an example of the Ag-Cu alloy, the alloy shown in (■) in Table 1 can be mentioned.
第４図は本発明の第４の実施例を示す図で、電子部品の
素子１３にＣｕ −Ｚ ｎの溶射層１ｏ、その上にＡｇ
を６０重量％以上含むＣｕ合金層１５を溶射し、その表
面を研磨後、有機酸あるいはフラックスで還元し、Ｓｎ
合金のコーティング層１１を形成して電極を形成する方
法を示す。FIG. 4 is a diagram showing a fourth embodiment of the present invention, in which an element 13 of an electronic component is coated with a thermally sprayed layer 1o of Cu-Zn, and a layer 1o of Ag is deposited thereon.
A Cu alloy layer 15 containing 60% by weight or more of Sn is thermally sprayed, its surface is polished, and then reduced with an organic acid or flux.
A method of forming an electrode by forming an alloy coating layer 11 is shown.
半田デイツプ３回まで半田付状態が良好な電極を得るに
は、同図の溶射層１５の溶射金属粒子の酸化を極力小さ
くする必要があり、Ｐ−Ｃｕ合金以外の溶射金属として
は、Ａｇを６０重量％以上含むＣｕ合金が適している。In order to obtain an electrode with good soldering condition up to three solder dips, it is necessary to minimize the oxidation of the sprayed metal particles in the sprayed layer 15 shown in the figure. A Cu alloy containing 60% by weight or more is suitable.
その合金の例を、表１の■に示す。Examples of such alloys are shown in Table 1 (■).
第６図は、以上の本発明の各実施例の方法と従来の方法
にて電極を形威し、半田デイツプにより半田付性を比較
検討した結果を示す。第６図よりわかるように、従来の
電極形成方法では、デイツプ半田付の回数とともに半田
付歩留が極端に低下する。本発明の各実施例の電極形成
方法では、デイツプ半田付を繰り返しても半田付歩留り
は良好である。特にＰ−Ｃｕ合金層とその上にＳｎ合金
をコーティングした実施例２，３は、デイツプ半田付を
３回以上行っても非常に良好な状態であることがわかる
。FIG. 6 shows the results of a comparative study of solderability using solder dips after forming electrodes using the method of each embodiment of the present invention and the conventional method. As can be seen from FIG. 6, in the conventional electrode forming method, the soldering yield extremely decreases as the number of dip soldering increases. In the electrode forming method of each embodiment of the present invention, the soldering yield is good even if dip soldering is repeated. In particular, it can be seen that Examples 2 and 3, in which the P-Cu alloy layer and the Sn alloy were coated thereon, remained in very good condition even after dip soldering was performed three or more times.
発明の効果
本発明は、以上説明したような電極形成方法であるため
、以下のような効果を奏する。Effects of the Invention Since the present invention is an electrode forming method as described above, it has the following effects.
溶射時に酸化を殆ど生じないＰ−Ｃｕ合金、あるいはＡ
ｇ−Ｃｕ合金を用いるため、デイツプ半田付を繰り返し
ても半田付性は良好な状態を保つ。P-Cu alloy or A that hardly oxidizes during thermal spraying
Since g-Cu alloy is used, solderability remains good even after repeated dip soldering.
特にＰ−Ｃｕ合金を溶射し、その表面を研磨し還元後、
Ｓｎ合金をコーティングする電極形成法では、半田付性
の非常に良好な電極が得られる。In particular, after spraying P-Cu alloy and polishing and reducing the surface,
The electrode formation method of coating with Sn alloy provides electrodes with very good solderability.
また、溶射金属粒子の酸化が少ないため、粒子間の結合
力も強く、電極としての強度の向上が計れる。In addition, since the sprayed metal particles are less oxidized, the bonding force between the particles is strong, and the strength of the electrode can be improved.
第１図〜第４図は本発明の第１〜第４実施例の電極形成
方法で電極形成を行った電子部品の断面図、第５図は溶
射金属層の表面処理の必要性を３
説明する断面図、第６図は本発明の各実施例と従来例の
半田付特性を比較して示したグラフ、第７図（ａ）〜（
Ｃ）は従来例の電極形成方法で電極形成を行った電子部
品の断面図である。
３−Ｐ−Ｃｕ、Ｐ−Ａｇ−Ｃｕ合金の溶射金属層からな
る電極、１０・・・・・・素子と電位差の少ない溶射金
属層、１１・・・・・・Ｓｎあるいは５ｎ−Ｐｂ合金の
コーティング層、１３・・・・・・素子、１４・・・・
・・Ａｇを２０％以上含むＣｕ合金の溶射金属層、１５
・・・・・・Ａｇを６０％以上含むＣｕ合金の溶射金属
層。Figures 1 to 4 are cross-sectional views of electronic components in which electrodes were formed using the electrode formation methods of the first to fourth embodiments of the present invention, and Figure 5 illustrates the necessity of surface treatment of the sprayed metal layer. FIG. 6 is a graph comparing the soldering characteristics of each embodiment of the present invention and the conventional example, and FIG. 7(a) to (
C) is a cross-sectional view of an electronic component in which electrodes were formed using a conventional electrode forming method. 3-Electrode made of a sprayed metal layer of P-Cu or P-Ag-Cu alloy, 10...A sprayed metal layer with a small potential difference from the element, 11...Sn or 5n-Pb alloy Coating layer, 13... Element, 14...
・・Sprayed metal layer of Cu alloy containing 20% or more of Ag, 15
......A thermally sprayed metal layer of a Cu alloy containing 60% or more of Ag.
Claims (9)
いて、溶射材としてＰを０．１〜１０重量％を含むＣｕ
合金を用いて溶射することを特徴とする電子部品の電極
形成方法。(1) In a method of forming electrodes of electronic components by thermal spraying, Cu containing 0.1 to 10% by weight of P is used as a thermal spraying material.
A method for forming electrodes of electronic components, characterized by thermal spraying using an alloy.
１つの金属層を、Ｐを０．１〜１０重量％含むＣｕ合金
を溶射材として溶射して形成することを特徴とする電子
部品の電極形成方法。(2) An electrode for an electronic component, characterized in that at least one metal layer of an electrode composed of a plurality of metal layers is formed by thermal spraying a Cu alloy containing 0.1 to 10% by weight of P as a thermal spraying material. Formation method.
合金である特許請求の範囲第２項記載の電子部品の電極
形成方法。(3) Outermost layer of multiple layers of electrode is Sn or Sn
A method for forming an electrode of an electronic component according to claim 2, wherein the electrode is an alloy.
ｍ以下にした後、Ｐ−Ｃｕ合金の表面を還元し、その上
にＳｎまたはＳｎ合金層を形成する特許請求の範囲第２
項記載の電子部品の電極形成方法。(4) The unevenness of the surface of the sprayed layer of P-Cu alloy is 0.5 m.
m or less, the surface of the P-Cu alloy is reduced, and a Sn or Sn alloy layer is formed thereon.
A method for forming an electrode of an electronic component as described in Section 1.
合金である特許請求の範囲第２項記載の電子部品の電極
形成方法。(5) The innermost layer of the multiple metal layers of the electrode is Cu-Zn.
A method for forming an electrode of an electronic component according to claim 2, wherein the electrode is an alloy.
の厚さが０．７ｍｍ以下である特許請求の範囲第１項ま
たは第２項記載の電子部品の電極形成方法。(6) A method for forming an electrode for an electronic component according to claim 1 or 2, wherein the P-Cu alloy formed as an electrode by thermal spraying has a thickness of 0.7 mm or less.
より形成された層がＡｇを２０重量％以上含むＣｕ合金
である特許請求の範囲第２項記載の電子部品の電極形成
方法。(7) The method for forming an electrode for an electronic component according to claim 2, wherein the layer formed by thermal spraying on the inner side of the P-Cu alloy layer is a Cu alloy containing 20% by weight or more of Ag.
外層はＳｎまたはＳｎ合金にて形成し、最外層に接する
金属層はＡｇまたはＡｇを６０重量％以上含むＣｕ合金
を溶射して形成することを特徴とする電子部品の電極形
成方法。(8) Among the electrodes composed of multiple metal layers, the outermost layer is formed of Sn or a Sn alloy, and the metal layer in contact with the outermost layer is thermally sprayed with Ag or a Cu alloy containing 60% by weight or more of Ag. 1. A method for forming an electrode of an electronic component, characterized by forming an electrode.
にした後、次の層の金属を溶射することを特徴とする電
子部品の電極形成方法。(9) A method for forming an electrode for an electronic component, which comprises reducing the unevenness of the surface of the sprayed metal layer to 0.5 mm or less, and then spraying the next layer of metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1223521A JPH0385715A (en) | 1989-08-30 | 1989-08-30 | Method of forming electrode of electronic component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1223521A JPH0385715A (en) | 1989-08-30 | 1989-08-30 | Method of forming electrode of electronic component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0385715A true JPH0385715A (en) | 1991-04-10 |
Family
ID=16799445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1223521A Pending JPH0385715A (en) | 1989-08-30 | 1989-08-30 | Method of forming electrode of electronic component |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0385715A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5648123A (en) * | 1992-04-02 | 1997-07-15 | Hoechst Aktiengesellschaft | Process for producing a strong bond between copper layers and ceramic |
| US6749339B1 (en) | 1999-09-03 | 2004-06-15 | Sumitomo Electric Industries, Ltd. | Hydrodynamic bearing assembly and spindle motor having the same |
| US7215508B2 (en) | 2001-03-08 | 2007-05-08 | Ngk Spark Plug Co., Ltd. | Ceramic dynamic-pressure bearing and hard disk drive using the same |
| JP2008082414A (en) * | 2006-09-27 | 2008-04-10 | Nippon Densan Corp | Fluid dynamic bearing device, magnetic disk device and portable electronic equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51112449A (en) * | 1975-03-28 | 1976-10-04 | Hitachi Cable | Filler metal and method of producing the same |
| JPS56122121A (en) * | 1980-02-28 | 1981-09-25 | Nippon Electric Co | Method of manufacturing electronic part |
| JPS5969906A (en) * | 1982-10-14 | 1984-04-20 | 松下電器産業株式会社 | Method of forming terminal electrode of laminated ceramic condenser |
| JPS60130814A (en) * | 1983-12-19 | 1985-07-12 | 松下電器産業株式会社 | Method of forming external electrode of laminated ceramic capacitor |
| JPS6477912A (en) * | 1987-09-18 | 1989-03-23 | Matsushita Electric Ind Co Ltd | Capacitor |
-
1989
- 1989-08-30 JP JP1223521A patent/JPH0385715A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51112449A (en) * | 1975-03-28 | 1976-10-04 | Hitachi Cable | Filler metal and method of producing the same |
| JPS56122121A (en) * | 1980-02-28 | 1981-09-25 | Nippon Electric Co | Method of manufacturing electronic part |
| JPS5969906A (en) * | 1982-10-14 | 1984-04-20 | 松下電器産業株式会社 | Method of forming terminal electrode of laminated ceramic condenser |
| JPS60130814A (en) * | 1983-12-19 | 1985-07-12 | 松下電器産業株式会社 | Method of forming external electrode of laminated ceramic capacitor |
| JPS6477912A (en) * | 1987-09-18 | 1989-03-23 | Matsushita Electric Ind Co Ltd | Capacitor |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5648123A (en) * | 1992-04-02 | 1997-07-15 | Hoechst Aktiengesellschaft | Process for producing a strong bond between copper layers and ceramic |
| JP2944215B2 (en) * | 1992-04-02 | 1999-08-30 | ヘキスト・アクチェンゲゼルシャフト | How to create a strong bond between a copper layer and a ceramic |
| US6749339B1 (en) | 1999-09-03 | 2004-06-15 | Sumitomo Electric Industries, Ltd. | Hydrodynamic bearing assembly and spindle motor having the same |
| US7360950B2 (en) | 1999-09-03 | 2008-04-22 | Sumitomo Electric Industries, Ltd. | Hydrodynamic bearing assembly |
| US7215508B2 (en) | 2001-03-08 | 2007-05-08 | Ngk Spark Plug Co., Ltd. | Ceramic dynamic-pressure bearing and hard disk drive using the same |
| JP2008082414A (en) * | 2006-09-27 | 2008-04-10 | Nippon Densan Corp | Fluid dynamic bearing device, magnetic disk device and portable electronic equipment |
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