JPH0375370A - Method for preventing electrification of synthetic resin - Google Patents
Method for preventing electrification of synthetic resinInfo
- Publication number
- JPH0375370A JPH0375370A JP1213779A JP21377989A JPH0375370A JP H0375370 A JPH0375370 A JP H0375370A JP 1213779 A JP1213779 A JP 1213779A JP 21377989 A JP21377989 A JP 21377989A JP H0375370 A JPH0375370 A JP H0375370A
- Authority
- JP
- Japan
- Prior art keywords
- jig
- synthetic resin
- wafer storage
- ions
- storage jig
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920003002 synthetic resin Polymers 0.000 title claims abstract description 22
- 239000000057 synthetic resin Substances 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 11
- 150000002500 ions Chemical class 0.000 claims abstract description 21
- 230000005611 electricity Effects 0.000 claims abstract description 12
- 230000003068 static effect Effects 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 abstract description 5
- 239000011347 resin Substances 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 46
- 238000003860 storage Methods 0.000 description 30
- 239000004065 semiconductor Substances 0.000 description 18
- 239000000428 dust Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- -1 polypropylene Polymers 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
半導体ウェーハを収納するウェーハ収納治具等を構成す
る合成樹脂の帯電を防止する方法に関し、ウェーハ収納
治具などを構成する合成樹脂の帯電を防止することが可
能な合成樹脂の帯電防止方法の提供を目的とし、
合成樹脂からなる基材の表面にイオンを注入し、前記基
材の表面にイオンを含有するイオン注入層を形成するよ
う構成する。[Detailed Description of the Invention] [Summary] This invention relates to a method for preventing charging of synthetic resin constituting a wafer storage jig etc. for storing semiconductor wafers. The present invention aims to provide a method for preventing static electricity on a synthetic resin, which is configured such that ions are implanted into the surface of a base material made of a synthetic resin, and an ion-implanted layer containing ions is formed on the surface of the base material.
本発明は、半導体ウェーハを収納するウェーハ収納治具
などを構成する合成樹脂の帯電を防止する方法に関する
ものである。The present invention relates to a method for preventing charging of a synthetic resin that constitutes a wafer storage jig for storing semiconductor wafers.
半導体装置の製造工程において半導体ウェーハを収納し
てウェーハの洗浄や運搬に用いるウェーハ収納治具には
弗素系樹脂が用いられており、ウェーハの保管や運搬に
用いるウェーハ収納治具にはポリプロピレンが用いられ
ているが、これらの合成樹脂の表面抵抗が高いために、
特に液中から空気中にこれらの材料からなるウェーハ収
納治具を引き上げた場合には帯電し易くなり、ウェーハ
収納治具が帯電すると空気中に浮遊している塵埃を吸着
し、その際ウェーハ収納治具に収納している半導体ウェ
ーハにもこの塵埃が吸着され、半導体ウェーハが汚染さ
れるために、半導体装置の製造工程において製造障害が
発生している。Fluorine-based resin is used for wafer storage jigs used to store, clean, and transport semiconductor wafers in the semiconductor device manufacturing process, and polypropylene is used for wafer storage jigs used to store and transport wafers. However, due to the high surface resistance of these synthetic resins,
In particular, when a wafer storage jig made of these materials is lifted from a liquid into the air, it becomes easily charged, and when the wafer storage jig is charged, it attracts dust floating in the air, and the wafer storage jig is This dust is also attracted to the semiconductor wafers housed in the jig, contaminating the semiconductor wafers and causing manufacturing failures in the semiconductor device manufacturing process.
以上のような状況から、合成樹脂の帯電を防止すること
が可能な合成樹脂の帯電防止方法が要望されている。Under the above circumstances, there is a need for a method for preventing static electricity on synthetic resins that can prevent static electricity on synthetic resins.
従来の半導体ウェーハを収納するウェーハ収納治具の場
合について第３図により説明する。The case of a conventional wafer storage jig for storing semiconductor wafers will be explained with reference to FIG.
図に示すように、ウェーハ収納治具１には溝１ａが設け
られており、この溝ｌａ内に半導体ウェーハを挿入して
収納している。As shown in the figure, the wafer storage jig 1 is provided with a groove 1a, into which a semiconductor wafer is inserted and stored.
このような半導体ウェーハを収納して半導体ウェーハの
洗浄や運搬に用いるウェーハ収納治具１には弗素系樹脂
が用いられており、半導体ウェーハの保管や運搬に用い
るウェーハ収納治具１にはポリプロピレンが用いられて
いる。The wafer storage jig 1 used for storing such semiconductor wafers, cleaning and transporting semiconductor wafers is made of fluorine resin, and the wafer storage jig 1 used for storing and transporting semiconductor wafers is made of polypropylene. It is used.
これらの合成樹脂は表面抵抗が高いために帯電し易くな
り、特に弗素系樹脂からなる洗浄用のウェーハ収納治具
１を液中から空気中に引き上げる際には、ウェーハ収納
治具１が帯電すると空気中に浮遊している塵埃を吸着し
、その際ウェーハ収納治具１に収納している半導体ウェ
ーハにもこの塵埃が吸着され、半導体ウェーハが汚染さ
れるために、半導体装置の製造工程において製造障害が
発生している。Because these synthetic resins have high surface resistance, they easily become electrically charged. In particular, when lifting the cleaning wafer storage jig 1 made of fluorine-based resin from the liquid into the air, the wafer storage jig 1 becomes electrically charged. When dust floating in the air is adsorbed, this dust is also adsorbed to the semiconductor wafers stored in the wafer storage jig 1, contaminating the semiconductor wafers. A failure has occurred.
以上説明した従来のウェーハ収納治具においては、ウェ
ーハ収納治具が弗素系樹脂やポリプロピレンなどの材料
から構成されているので帯電し易くなっており、塵埃を
吸着し易くなっている。このためにウェーハ収納治具に
収納している半導体ウェーハにもこの塵埃が吸着されて
半導体ウェーハが汚染され、半導体装置の製造工程にお
いて製造障害が発生するという問題点があった。In the conventional wafer storage jig described above, since the wafer storage jig is made of a material such as fluorine-based resin or polypropylene, it is easily charged and attracts dust. For this reason, this dust is also attracted to the semiconductor wafers stored in the wafer storage jig, contaminating the semiconductor wafers and causing manufacturing failures in the semiconductor device manufacturing process.
本発明は以上のような状況から、ウェーハ収納治具など
を構成する合成樹脂の帯電を防止することが可能な合成
樹脂の帯電防止方法の提供を目的としたものである。SUMMARY OF THE INVENTION In view of the above-mentioned circumstances, the present invention aims to provide a method for preventing charging of a synthetic resin, which is capable of preventing charging of a synthetic resin constituting a wafer storage jig or the like.
本発明の合成樹脂の帯電防止方法は、合成樹脂からなる
基材の表面にイオンを注入し、前記基材の表面にイオン
を含有するイオン注入層を形成するよう構成する。The method for preventing static electricity of a synthetic resin according to the present invention is configured such that ions are implanted into the surface of a base material made of a synthetic resin, and an ion-implanted layer containing ions is formed on the surface of the base material.
即ち本発明においては、半導体ウェーハを収納するウェ
ーハ収納治具などを構成する合成樹脂の表面にイオンを
注入し、この合成樹脂の表面にイオンを含有するイオン
注入層を形成するので、表面に発生する静電気の量を減
少させることができ、また、このイオン注入層の電気抵
抗が非常に小さいので、使用に際してこのウェーハ収納
治具を接地することにより、表面に発生した静電気を完
全に伝導させて除去することが可能となる。That is, in the present invention, ions are implanted into the surface of a synthetic resin constituting a wafer storage jig for storing semiconductor wafers, and an ion-implanted layer containing ions is formed on the surface of this synthetic resin, so that the ions generated on the surface are In addition, since the electrical resistance of this ion-implanted layer is extremely low, by grounding this wafer storage jig during use, the static electricity generated on the surface can be completely conducted. It becomes possible to remove it.
以下第１図により本発明による一実施例を弗素樹脂から
なるウェーハ収納治具の場合について説明する。An embodiment of the present invention will be described below with reference to FIG. 1 in the case of a wafer storage jig made of fluororesin.
第１図は本発明による一実施例を示す図であり、ウェー
ハ収納治具１の全表面に図における矢印のようにイオン
をムラなく注入するために、イオン注入装置内ではウェ
ーハ収納治具ｌを移動させることが必要となる。FIG. 1 is a diagram showing an embodiment according to the present invention. In order to uniformly implant ions onto the entire surface of the wafer storage jig 1 as shown by the arrows in the figure, the wafer storage jig 1 is used in the ion implantation apparatus. It is necessary to move the .
イオン注入による効果を確認するために、直径１００ｗ
、厚さ３ｆｌの弗素樹脂製の円板と、同じ円板に下記条
件でイオンを注入したものとを作ってその帯電状態を比
較した。In order to confirm the effect of ion implantation, a diameter of 100W was used.
A disk made of fluororesin having a thickness of 3 fl and a disk in which ions were implanted under the following conditions were prepared and their charged states were compared.
イオン種−−−−−−−−−一−−−−−・−・−−−
−−−−一・−・〜−−−−−シリコン（Ｓｉ”）注入
エネルギー・−・−・・−・−・−一−−−−・−・・
・・・−−−−−１５０ＫｅＶドーズ量−−−−−−−
−−−−・−−−−−−−−−−−−−−−−−−５Ｘ
１０ ” ｃｍ−”このイオン注入を行った弗素樹脂
の円板の表面は基材とは異なる褐色になる。Ion species----------------
−−−−１・−・〜−−−−−Silicon (Si”) implantation energy・−・−・・−・−・−１−−−−・−・・
...------150KeV dose------
−−−−・−−−−−−−−−−−−−−−5X
10"cm-"The surface of the fluororesin disk into which this ion implantation was performed becomes a brown color different from that of the base material.
これらの円板を純水中から引き上げて、その直後の静電
気による帯電電圧を測定した測定結果は下表の通りであ
る。These disks were pulled up from pure water and the charging voltage due to static electricity was measured immediately after that. The measurement results are shown in the table below.
このようにイオンを注入しない場合には、接地を行って
も−１０，０００〜−２０，０ＯＯＶ（７）帯電電圧が
認められるが、イオンを注入した場合には、接地を行わ
ない場合においても実用的には静電気障害が発生しない
−２，０ＯＯＶ以下であり、接地を行った場合において
はＯＶになり、完全に帯電を防止することが可能となる
。In this way, when ions are not implanted, a charged voltage of -10,000 to -20,000 OOV (7) is observed even when grounded, but when ions are implanted, even when not grounded. Practically speaking, it is below -2.0 OOV, at which no electrostatic disturbance occurs, and when grounded, it becomes OV, making it possible to completely prevent charging.
ウェーハ収納治具１を純水２中から引き上げる場合には
、第２図に示すようにウェーハ収納治具ｌをケーブル３
によって接地すると上記のように帯電電圧をＯｖにする
ことが可能となる。When lifting the wafer storage jig 1 from the pure water 2, the wafer storage jig 1 is connected to the cable 3 as shown in FIG.
When grounded by , it becomes possible to set the charging voltage to Ov as described above.
以上の説明から明らかなように本発明によれば、極めて
簡単なイオン注入処理を行うことにより、合成樹脂の基
材の表面にイオン注入層を形成することが可能となり、
合成樹脂の表面の静電気の量を減少させることができ、
更に接地することにより、表面に発生した静電気を完全
に伝導させて除去することが可能となる利点があり、著
しい信頼性向上の効果が期待できる合成樹脂の帯電防止
方法の提供が可能となる。As is clear from the above description, according to the present invention, by performing an extremely simple ion implantation process, it is possible to form an ion implantation layer on the surface of a synthetic resin base material.
Can reduce the amount of static electricity on the surface of synthetic resin,
Furthermore, grounding has the advantage that static electricity generated on the surface can be completely conducted and removed, making it possible to provide a method for preventing static electricity on synthetic resins that can be expected to significantly improve reliability.
第１図は本発明による一実施例を示す図、第２図はウェ
ーハ収納治具を接地して純水中から引き上げる状態を示
す図、
第３図はウェーハ収納治具の斜視図、
である。
図において、
１はウェーハ収納治具、
１ａは溝、
２は純水、
３はケーブル、
を示す。
本発明による一実施例を示す図
第１図
ウェーハ収納治具を接地して純水中から引き上げる状態
を示す図ウェーハ収納治具の斜視図
第 ３ 図
第 ２ 図FIG. 1 is a diagram showing one embodiment of the present invention, FIG. 2 is a diagram showing a state in which the wafer storage jig is grounded and pulled up from pure water, and FIG. 3 is a perspective view of the wafer storage jig. . In the figure, 1 is a wafer storage jig, 1a is a groove, 2 is pure water, and 3 is a cable. FIG. 1 is a diagram illustrating an embodiment of the present invention. FIG. 1 is a diagram showing a state in which the wafer storage jig is grounded and pulled up from pure water. A perspective view of the wafer storage jig FIG. 3 FIG. 2
Claims (1)
基材の表面にイオンを含有するイオン注入層を形成する
ことを特徴とする合成樹脂の帯電防止方法。A method for preventing static electricity on a synthetic resin, which comprises implanting ions into the surface of a base material made of synthetic resin, and forming an ion-implanted layer containing ions on the surface of the base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1213779A JPH0375370A (en) | 1989-08-17 | 1989-08-17 | Method for preventing electrification of synthetic resin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1213779A JPH0375370A (en) | 1989-08-17 | 1989-08-17 | Method for preventing electrification of synthetic resin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0375370A true JPH0375370A (en) | 1991-03-29 |
Family
ID=16644899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1213779A Pending JPH0375370A (en) | 1989-08-17 | 1989-08-17 | Method for preventing electrification of synthetic resin |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0375370A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008021744A (en) * | 2006-07-11 | 2008-01-31 | Shin Etsu Polymer Co Ltd | Housing container for semiconductor wafer |
| JP2022036902A (en) * | 2020-08-24 | 2022-03-08 | セメス カンパニー，リミテッド | Substrate processing device, ion implantation processing device, and ion implantation processing method |
-
1989
- 1989-08-17 JP JP1213779A patent/JPH0375370A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008021744A (en) * | 2006-07-11 | 2008-01-31 | Shin Etsu Polymer Co Ltd | Housing container for semiconductor wafer |
| JP2022036902A (en) * | 2020-08-24 | 2022-03-08 | セメス カンパニー，リミテッド | Substrate processing device, ion implantation processing device, and ion implantation processing method |
| US11961695B2 (en) | 2020-08-24 | 2024-04-16 | Semes Co., Ltd. | Substrate treating apparatus, ion implantation apparatus, and ion implantation method |
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