JPH0373527A - Chemical vapor growth apparatus - Google Patents
Chemical vapor growth apparatusInfo
- Publication number
- JPH0373527A JPH0373527A JP20991089A JP20991089A JPH0373527A JP H0373527 A JPH0373527 A JP H0373527A JP 20991089 A JP20991089 A JP 20991089A JP 20991089 A JP20991089 A JP 20991089A JP H0373527 A JPH0373527 A JP H0373527A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- permeable plate
- film
- chemical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 abstract description 96
- 239000000758 substrate Substances 0.000 abstract description 21
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 239000012495 reaction gas Substances 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 2
- 239000011261 inert gas Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 206010011224 Cough Diseases 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概 要〕
多数のガス噴射孔を形成した板をガス導入部に取付けた
化学気相成長装置に関し、
膜を均一な厚さに形成することを目的とし、成膜対象物
載置台に対向するガス導入口を備えた化学気相成長装置
において、多数のガス噴出孔を有するとともに、球面状
に形成されたガス透過板の曲面の凸側を前記成膜対象物
載置台に対向させて、該ガス透過板を上記ガス導入口に
装着したことを含み＃Ｉ或する。[Detailed Description of the Invention] [Summary] Regarding a chemical vapor deposition apparatus in which a plate with a large number of gas injection holes is attached to the gas introduction part, the purpose of forming a film with a uniform thickness is to form a film with a uniform thickness. In a chemical vapor deposition apparatus equipped with a gas inlet facing the object mounting table, the convex side of the curved surface of the gas permeable plate, which has a large number of gas ejection holes and is formed in a spherical shape, is placed on the object mounting table. #I includes mounting the gas permeable plate on the gas inlet so as to face the mounting table.
本発明は、化学気相成長装置に関し、より詳しくは、多
数のガス噴射孔を有する板をガス導入部に取付けた化学
気相成長装置に関する。The present invention relates to a chemical vapor deposition apparatus, and more particularly to a chemical vapor deposition apparatus in which a plate having a large number of gas injection holes is attached to a gas introduction section.
燐ガラス膜、シリコン酸化膜等を基板上に形成する装置
の１つとして、第４図に示すような化学気相成長装置４
０が使用されており、この装置４０には、反応ガスを導
入するガス導入層４１が基板４２に対向して取付けられ
ている。A chemical vapor deposition apparatus 4 as shown in FIG. 4 is one of the apparatuses for forming a phosphorous glass film, a silicon oxide film, etc. on a substrate.
0 is used, and a gas introduction layer 41 for introducing a reaction gas is attached to this device 40 so as to face a substrate 42.
そして、ガス導入層４１は、外部から送られたガスをガ
ス拡散室４３に導入し、ここで拡散したガスをアルミニ
ウムよりなる平坦なガス透過板４４を通して基板４２に
放出するように構成されている。The gas introduction layer 41 is configured to introduce gas sent from the outside into the gas diffusion chamber 43 and release the gas diffused here to the substrate 42 through a flat gas permeable plate 44 made of aluminum. .
また、ガス透過板４４は、基板４２にガスを均−に供給
するために板厚をｌｓｓ程度に薄く形成するとともに、
その面に多数のガス噴出孔４５を設け、ガス拡散室３内
のガスをガス噴射孔４５から扇形状に放出するようにｔ
ｌ威されている。Further, the gas permeable plate 44 is formed to have a thin plate thickness of about lss in order to uniformly supply gas to the substrate 42, and
A large number of gas injection holes 45 are provided on the surface, and the gas in the gas diffusion chamber 3 is emitted from the gas injection holes 45 in a fan shape.
I'm being bullied.
しかし、薄く形成された平坦なガス透過板４４は、ヒー
タ４６から３００℃程度の熱を受けて第５図に示すよう
な波型に湾曲してしまい、そのうち、ガス放出方向に対
して内向きに曲がった部分から出たガスが乱気流発生の
原因となり、その下方の領域にある基板４２の一部に十
分な量の反応ガスが供給されず、形成しようとする膜が
部分的に薄層化するといった問題がある。However, the thin and flat gas permeable plate 44 receives heat of about 300°C from the heater 46 and curves into a wave shape as shown in FIG. The gas coming out from the bent part causes turbulence, and a sufficient amount of reaction gas is not supplied to a part of the substrate 42 in the area below it, causing the film to be formed to become partially thin. There is a problem of doing so.
本発明は、このような問題に鑑みてなされたものであっ
て、膜を均一な厚さに形成することができる気相成長装
置を提供することを目的とする。The present invention has been made in view of such problems, and an object of the present invention is to provide a vapor phase growth apparatus that can form a film with a uniform thickness.
上記したｉｌｌ！は、第１図に例示するように、成膜対
象物載置台５に対向するガス導入口３を備えた化学気相
成長装置において、多数のガス噴出孔６を有するととも
に、球面状に形成されたガス透過板４の曲面の凸側を前
記ｔｃ膜対象物Ｉ！置台５に対向させて、咳ガス透過板
４を上記ガス導入口３に装着したことを特徴とする化学
気相成長装置により解決する。The ill! mentioned above! As illustrated in FIG. 1, this is a chemical vapor deposition apparatus equipped with a gas inlet 3 facing a film-forming object mounting table 5, and has a large number of gas ejection holes 6 and is formed in a spherical shape. The curved convex side of the gas permeable plate 4 is connected to the TC film target I! This problem is solved by a chemical vapor deposition apparatus characterized in that a cough gas permeable plate 4 is attached to the gas inlet 3 so as to face the mounting table 5.
本発明によれば、ガス透過板４を球面状に形成している
ため、ガス透過板４が加熱されて膨張しても、その応力
はガス透明板４の曲面に沿って加わるために、波状に変
形しにくくなる。According to the present invention, since the gas permeable plate 4 is formed into a spherical shape, even if the gas permeable plate 4 is heated and expands, the stress is applied along the curved surface of the gas transparent plate 4, so that it forms a wavy shape. becomes difficult to deform.
このため、ガス透過板４のガス噴射孔６から放出された
ガスは扇形状に放出されて乱気流を発生することがなく
、成膜対象物に均一に分布することになる。Therefore, the gas emitted from the gas injection holes 6 of the gas permeable plate 4 is emitted in a fan shape and does not generate turbulence, and is uniformly distributed over the object to be film-formed.
また、球面状に形成されたガス透過板４は、厚み方向の
耐応力性が増すことになるため、外部からの力による変
形が生じ雛くなり、取扱いが容易になる。Moreover, the gas permeable plate 4 formed in a spherical shape has increased stress resistance in the thickness direction, so that it is deformed by external force and becomes easy to handle.
そこで、以下に本発明の実施例を図面に基づいて説明す
る。Therefore, embodiments of the present invention will be described below based on the drawings.
第１図は、本発明の一実施例を示す装置の断面図と斜視
図、第２．３図は、本発明の一実施例を示す装置の要部
の断面図及び側面図である。FIG. 1 is a cross-sectional view and a perspective view of an apparatus showing an embodiment of the present invention, and FIGS. 2 and 3 are a cross-sectional view and a side view of essential parts of the apparatus showing an embodiment of the present invention.
図中符号１は、化学気相成膜装置における反応室２内の
上部に取付けた円盤型のガス導入器で、このガス導入器
１は、内部を空洞に形成した下面開放形のガス拡散室３
を有するとともに、その底面が、後述するガス透過！ｊ
４によって覆われており、ガス拡散室３内！拡散した反
応ガスをガス透過板４を透過させて基板載置台５に均一
に放出するように構成されている。Reference numeral 1 in the figure is a disk-shaped gas introducer attached to the upper part of the reaction chamber 2 in a chemical vapor deposition apparatus. 3
At the same time, its bottom surface is gas permeable, which will be described later! j
4 and inside the gas diffusion chamber 3! The diffused reaction gas is configured to pass through the gas permeable plate 4 and be uniformly released onto the substrate mounting table 5.
上記したガス透過板４は、アルミニウムやアル電ニウム
合金等により形成されたもので、第２．３図に示すよう
に、一定の曲率をもって球面状に形成されるとともに、
面に対してほぼ垂直向きに多数のガス噴出孔６が形成さ
れている。また、ガス透過板４は、曲面の凸側を基板載
置台５に対向させて装着されており、このガス透過板４
を透過したガスが扇形状に広がって基板Ｗに達するよう
に構成されている。The gas permeable plate 4 described above is made of aluminum, an aluminum alloy, etc., and is formed into a spherical shape with a certain curvature as shown in Fig. 2.3.
A large number of gas ejection holes 6 are formed substantially perpendicularly to the surface. Further, the gas permeable plate 4 is mounted with the convex side of the curved surface facing the substrate mounting table 5, and this gas permeable plate 4
The structure is such that the gas that has passed through the substrate W spreads out in a fan shape and reaches the substrate W.
７は、ガス導入器１の下面にビス止めされるドーナツツ
状の裏蓋で、ガス導入器１との間にガス透明ＩＩ＆、４
を挟持するように構成されている。7 is a donut-shaped back cover that is screwed to the bottom surface of the gas introducer 1, and between it and the gas introducer 1, there is a gas transparent II&, 4
It is configured to hold the
８は、ガス導入器１のガス管９に電圧を印加する高周波
電源、１０は、裏蓋７をガス導入器ｌに取付けるビス、
１１は、基板載置第５の下に取付けた基板加熱用のヒー
タ、１２は、反応室２に設けた排気口を示している。8 is a high frequency power supply that applies voltage to the gas pipe 9 of the gas introducer 1; 10 is a screw that attaches the back cover 7 to the gas introducer l;
Reference numeral 11 indicates a heater for heating the substrate attached under the fifth substrate mount, and reference numeral 12 indicates an exhaust port provided in the reaction chamber 2.
次に、上記した実施例の動作について説明する。Next, the operation of the above embodiment will be explained.
上記した実施例において、ガス管９を通して反応ガスや
不活性ガスを反応室２内に供給すると、そのガスはガス
導入器ｌのガス拡散室３内に入って拡散した後、ガス透
過板４のガス噴出孔６を通して基板Ｗに向けて噴射され
る。この結果、ヒータ１１によって加熱された基板Ｗの
表面で化学反応が起きて反応ガスの種類に応じた膜が形
成される。In the above-described embodiment, when a reactive gas or an inert gas is supplied into the reaction chamber 2 through the gas pipe 9, the gas enters the gas diffusion chamber 3 of the gas inlet l and diffuses, and then passes through the gas permeable plate 4. The gas is ejected toward the substrate W through the gas ejection holes 6. As a result, a chemical reaction occurs on the surface of the substrate W heated by the heater 11, and a film corresponding to the type of reaction gas is formed.
この状態において、ガス透過板４を球面状に形成してい
るため、ガス透過板４がヒータ１１から熱を受けて膨張
しても、その応力はガス透過板４の曲面に沿って外方向
に加わるために、第５図に示すような波状の変形が生じ
ない、従って、ガス透過板４のガス噴出孔６から放出さ
れたガスがぶつかり合って乱気流を発生させることがな
い。In this state, since the gas permeable plate 4 is formed into a spherical shape, even if the gas permeable plate 4 receives heat from the heater 11 and expands, the stress is directed outward along the curved surface of the gas permeable plate 4. Therefore, the wave-like deformation as shown in FIG. 5 does not occur, and therefore, the gas emitted from the gas ejection holes 6 of the gas permeable plate 4 does not collide with each other to generate turbulence.
また、球面状に形成されたガス透過板４は、厚み方向の
耐力性が増すことになり、外からの力によって変形しに
くくなり、取扱いが容易になる。Moreover, the gas permeable plate 4 formed in a spherical shape has increased strength in the thickness direction, is less likely to be deformed by external force, and is easier to handle.
次に、本発明をさらに具体化した例を説明する。Next, an example that further embodies the present invention will be described.
ガス透過板４の本体の直径を２００ｇ＋ｍ、曲率半径を
２０００ｍ５、板厚を１．５Ｉｎに形成するとともに、
ガス噴出孔６の径を１，０曽■、ガス噴出孔６の間隔を
５．０問として多数形威し、これをガス導入器４１の底
部に取付け、１τｏｒｒの圧力下において、ガス管から
シラン１０ｃｃ、酸素１００ｃｃ、窒素ｌｌを導入して
ガス透過板から基板４２に反応ガスを放出すると、基板
４２には、均一な厚さのＳｉＯ□膜が形成されることが
確認されている。The main body of the gas permeable plate 4 has a diameter of 200 g+m, a radius of curvature of 2000 m, and a thickness of 1.5 In.
The diameter of the gas nozzle 6 is set to 1.0mm, the interval between the gas nozzles 6 is set to 5.0cm, and this is attached to the bottom of the gas inlet 41, and the gas pipe is inserted under a pressure of 1τorr. It has been confirmed that when 10 cc of silane, 100 cc of oxygen, and 1 liter of nitrogen are introduced and a reactive gas is released from the gas permeable plate to the substrate 42, a SiO□ film with a uniform thickness is formed on the substrate 42.
この場合、基板４２の温度を４００℃にするが、ガス透
過板４には、第５図に示すような逆向きの曲面が形成さ
れないことが確認されている。In this case, although the temperature of the substrate 42 is set to 400° C., it has been confirmed that the gas permeable plate 4 does not have a reversely curved surface as shown in FIG.
以上述べたように本発明によれば、ガス透過板を球面状
に形成しているので、ガス透過板が加熱されて膨張して
も、その応力がガス透明板の曲面に沿って外側に加わる
ことになって変形し難くなり、ガスを扇形に放射して基
板に均一に供給することができる。As described above, according to the present invention, since the gas permeable plate is formed into a spherical shape, even if the gas permeable plate is heated and expands, the stress is applied to the outside along the curved surface of the gas transparent plate. This makes it difficult to deform, and the gas can be emitted in a fan shape to uniformly supply the gas to the substrate.
また、球面状に形成されたガス透過板は、厚み方向の耐
力性が増すことになり、外からの力によって変形しにく
くなり、ガス透過板の取扱いが容易になる。Moreover, the gas permeable plate formed in a spherical shape has increased strength in the thickness direction, is less likely to be deformed by external force, and the gas permeable plate is easier to handle.
第１図は、本発明の一実施例を示す装置の断面図、
第２図は、本発明の一実施例装置の要部を示す断面図、
第３図は、本発明の一実施例に適用するガス透過板を示
す側面図、
第４図は、従来装置の一例を示す断面図、第５図は、従
来装置のガス透過板の要部を示す断面図である。
（符号の説明）
ｌ・・・ガス導入器、
２・・・反応室、
３・・・ガス拡散室、
４・・・ガス透過板、
５・・・基板ａｔ台、
６・・・ガス噴出孔、
７・・・裏蓋、
８・・・高周波電源、
９・・・ガス管。
本発明の一実施例を示す装置の断面図
第１図
出 願 人 富士通株式会社FIG. 1 is a sectional view of a device showing an embodiment of the present invention, FIG. 2 is a sectional view showing essential parts of a device of an embodiment of the present invention, and FIG. 3 is a sectional view of a device showing an embodiment of the present invention. FIG. 4 is a sectional view showing an example of a conventional device; FIG. 5 is a sectional view showing a main part of the gas permeable plate of the conventional device. (Explanation of symbols) 1...Gas introduction device, 2...Reaction chamber, 3...Gas diffusion chamber, 4...Gas permeation plate, 5...Substrate at stand, 6...Gas jetting Hole, 7...Back cover, 8...High frequency power supply, 9...Gas pipe. Figure 1 is a cross-sectional view of a device showing one embodiment of the present invention.Applicant: Fujitsu Limited
Claims (1)
相成長装置において、 多数のガス噴出孔を有するとともに、球面状に形成され
たガス透過板の曲面の凸側を前記成膜対象物載置台に対
向させて、該ガス透過板を上記ガス導入口に装着したこ
とを特徴とする化学気相成長装置。[Scope of Claim] A chemical vapor deposition apparatus equipped with a gas inlet facing a film-forming object mounting table, which has a convex curved surface of a gas permeable plate formed in a spherical shape and has a large number of gas ejection holes. A chemical vapor deposition apparatus characterized in that the gas permeable plate is attached to the gas inlet with its side facing the film-forming object mounting table.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20991089A JPH0373527A (en) | 1989-08-14 | 1989-08-14 | Chemical vapor growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20991089A JPH0373527A (en) | 1989-08-14 | 1989-08-14 | Chemical vapor growth apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0373527A true JPH0373527A (en) | 1991-03-28 |
Family
ID=16580679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20991089A Pending JPH0373527A (en) | 1989-08-14 | 1989-08-14 | Chemical vapor growth apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0373527A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6109209A (en) * | 1994-11-16 | 2000-08-29 | Rudolph; James W. | Apparatus for use with CVI/CVD processes |
| US6497767B1 (en) * | 1999-05-14 | 2002-12-24 | Tokyo Electron Limited | Thermal processing unit for single substrate |
| JP2005528955A (en) * | 2002-06-08 | 2005-09-29 | トムソン，イアン，ロバート | Drug / health enhancer administration device |
| US20110244128A1 (en) * | 2010-03-31 | 2011-10-06 | Tokyo Electron Limited | Flow plate utilization in filament assisted chemical vapor deposition |
-
1989
- 1989-08-14 JP JP20991089A patent/JPH0373527A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6109209A (en) * | 1994-11-16 | 2000-08-29 | Rudolph; James W. | Apparatus for use with CVI/CVD processes |
| US6497767B1 (en) * | 1999-05-14 | 2002-12-24 | Tokyo Electron Limited | Thermal processing unit for single substrate |
| JP2005528955A (en) * | 2002-06-08 | 2005-09-29 | トムソン，イアン，ロバート | Drug / health enhancer administration device |
| US20110244128A1 (en) * | 2010-03-31 | 2011-10-06 | Tokyo Electron Limited | Flow plate utilization in filament assisted chemical vapor deposition |
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