JPH0371327U - - Google Patents
Info
- Publication number
- JPH0371327U JPH0371327U JP13287889U JP13287889U JPH0371327U JP H0371327 U JPH0371327 U JP H0371327U JP 13287889 U JP13287889 U JP 13287889U JP 13287889 U JP13287889 U JP 13287889U JP H0371327 U JPH0371327 U JP H0371327U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- transistor array
- film transistor
- source electrode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 10
- 239000010408 film Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Description
第１図Ａ及びＢは、第１実施例の薄膜トランジ
スタアレイの説明に供する平面図及び断面図、第
２図Ａ及びＢは、他の実施例の薄膜トランジスタ
アレイの説明に供する図、第３図Ａ及びＢは、従
来技術の説明に供する平面図及び断面図である。
１１……基板（ガラス基板）、１３……ゲート
電極、１５……ゲート絶縁膜、１７……活性層、
１９……ドレイン電極、２１……ソース電極、２
３……保護膜、２３ａ……コンタクトホール、２
５……表示電極、２７……段差、３１……凸部分
。
1A and B are a plan view and a cross-sectional view for explaining a thin film transistor array of a first embodiment, FIGS. 2A and B are diagrams for explaining a thin film transistor array of another embodiment, and FIG. 3A is a diagram for explaining a thin film transistor array of another embodiment. and B are a plan view and a cross-sectional view for explaining the prior art. 11... Substrate (glass substrate), 13... Gate electrode, 15... Gate insulating film, 17... Active layer,
19...Drain electrode, 21...Source electrode, 2
3...Protective film, 23a...Contact hole, 2
5... Display electrode, 27... Step, 31... Convex portion.
Claims (1)
、ドレイン電極及びソース電極を有する薄膜トラ
ンジスタを多数具え、及び、これら薄膜トランジ
スタを覆う保護膜であつて前記ソース電極に表示
電極を接続するためのコンタクトホールを有する
保護膜を具える薄膜トランジスタアレイにおいて
、 基板のソース電極近傍領域に、該ソース電極及
び基板間に構成される段差を緩和するための該段
差より低い高さの凸部分を設けたこと 特徴とする薄膜トランジスタアレイ。 (2) 請求項１に記載の薄膜トランジスタアレイ
において、 前記凸部分を、前記ゲート電極の形成時に同時
に形成した前記ゲート電極と同じ材料から成る凸
部分でかつ前記ソース電極に電気的に接続された
凸部分で構成し、 該凸部分上に前記コンタクトホールを設けたこ
と を特徴とする薄膜トランジスタアレイ。[Claims for Utility Model Registration] (1) A substrate comprising a large number of thin film transistors each having a gate electrode, a gate insulating film, an active layer, a drain electrode, and a source electrode, and a protective film covering these thin film transistors, the source electrode being In a thin film transistor array comprising a protective film having a contact hole for connecting a display electrode, a region of the substrate near the source electrode is provided with a height lower than the step formed between the source electrode and the substrate to alleviate the step. A thin film transistor array characterized by having a convex portion. (2) In the thin film transistor array according to claim 1, the convex portion is a convex portion made of the same material as the gate electrode, formed at the same time as the gate electrode is formed, and electrically connected to the source electrode. What is claimed is: 1. A thin film transistor array comprising: a thin film transistor array, the contact hole being formed on the convex portion;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13287889U JPH0371327U (en) | 1989-11-15 | 1989-11-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13287889U JPH0371327U (en) | 1989-11-15 | 1989-11-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0371327U true JPH0371327U (en) | 1991-07-18 |
Family
ID=31680309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13287889U Pending JPH0371327U (en) | 1989-11-15 | 1989-11-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0371327U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007299426A (en) * | 2007-08-03 | 2007-11-15 | Matsushita Electric Ind Co Ltd | Non-contact type ic card system |
| JP2008527515A (en) * | 2005-01-07 | 2008-07-24 | トムソン ライセンシング | Method for communicating with a detector of the presence of a chip card in a reader, chip card and reader for communicating with such a presence detector |
-
1989
- 1989-11-15 JP JP13287889U patent/JPH0371327U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008527515A (en) * | 2005-01-07 | 2008-07-24 | トムソン ライセンシング | Method for communicating with a detector of the presence of a chip card in a reader, chip card and reader for communicating with such a presence detector |
| JP2007299426A (en) * | 2007-08-03 | 2007-11-15 | Matsushita Electric Ind Co Ltd | Non-contact type ic card system |
| JP4629706B2 (en) * | 2007-08-03 | 2011-02-09 | パナソニック株式会社 | Non-contact IC card system |
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