JPH01133124U - - Google Patents
Info
- Publication number
- JPH01133124U JPH01133124U JP2775588U JP2775588U JPH01133124U JP H01133124 U JPH01133124 U JP H01133124U JP 2775588 U JP2775588 U JP 2775588U JP 2775588 U JP2775588 U JP 2775588U JP H01133124 U JPH01133124 U JP H01133124U
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- electrode
- semiconductor layer
- drain
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Description
第１図は本考案の薄膜トランジスタの一実施例
を示す模式的平面図、第２図は従来の薄膜トラン
ジスタの一例を示す模式的平面図、第３図はその
第２図の―断面図、第４図はその薄膜トラン
ジスタを用いた液晶表示装置の模式的等価回路を
示す回路図である。
２……ゲート電極、４……絶縁層、５……半導
体層としてのａ‐Ｓｉ層、６……ソース電極、７
……ドレイン電極、９……薄膜トランジスタ（Ｔ
ＦＴ）。
FIG. 1 is a schematic plan view showing an embodiment of the thin film transistor of the present invention, FIG. 2 is a schematic plan view showing an example of a conventional thin film transistor, FIG. 3 is a cross-sectional view of FIG. The figure is a circuit diagram showing a schematic equivalent circuit of a liquid crystal display device using the thin film transistor. 2... Gate electrode, 4... Insulating layer, 5... A-Si layer as a semiconductor layer, 6... Source electrode, 7
...Drain electrode, 9...Thin film transistor (T
FT).
Claims (1)
および半導体層を介してかつ相互に離間して配設
されこの半導体層により電気的に接続されるソー
ス電極およびドレイン電極とを備えた薄膜トラン
ジスタにおいて、 上記ソース電極およびドレイン電極を上記ゲー
ト電極を横断してこのゲート電極と交わるように
配設するとともに、上記ソース電極およびドレイ
ン電極間で上記半導体層の少なくとも一部の幅を
上記ゲート電極の幅よりも小さくしたことを特徴
とする薄膜トランジスタ。[Claims for Utility Model Registration] A gate electrode, and a source electrode and a drain which are arranged between the gate electrode with an insulating layer and a semiconductor layer interposed therebetween and are spaced apart from each other and are electrically connected by the semiconductor layer. In the thin film transistor, the source electrode and the drain electrode are disposed to cross the gate electrode and intersect with the gate electrode, and at least a portion of the semiconductor layer is disposed between the source electrode and the drain electrode. A thin film transistor characterized in that the width is smaller than the width of the gate electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2775588U JPH01133124U (en) | 1988-03-02 | 1988-03-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2775588U JPH01133124U (en) | 1988-03-02 | 1988-03-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01133124U true JPH01133124U (en) | 1989-09-11 |
Family
ID=31250524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2775588U Pending JPH01133124U (en) | 1988-03-02 | 1988-03-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01133124U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11326943A (en) * | 1998-05-07 | 1999-11-26 | Fron Tec:Kk | Active matrix type liquid crystal display device and substrate used for same |
| JP2007164172A (en) * | 2005-12-14 | 2007-06-28 | Au Optronics Corp | Liquid crystal display and method for manufacturing the same |
| JP2007266252A (en) * | 2006-03-28 | 2007-10-11 | Toppan Printing Co Ltd | Thin film transistor and manufacturing method thereof |
| JP2011205119A (en) * | 2000-08-28 | 2011-10-13 | Sharp Corp | Thin film transistor |
| JP2012138549A (en) * | 2010-12-28 | 2012-07-19 | Dainippon Printing Co Ltd | Thin film transistor |
| US8779430B2 (en) | 2010-05-10 | 2014-07-15 | Sharp Kabushiki Kaisha | Semiconductor device, active matrix substrate, and display device |
| JP2022121587A (en) * | 2013-09-13 | 2022-08-19 | 株式会社半導体エネルギー研究所 | Display device |
-
1988
- 1988-03-02 JP JP2775588U patent/JPH01133124U/ja active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11326943A (en) * | 1998-05-07 | 1999-11-26 | Fron Tec:Kk | Active matrix type liquid crystal display device and substrate used for same |
| JP2011205119A (en) * | 2000-08-28 | 2011-10-13 | Sharp Corp | Thin film transistor |
| JP2007164172A (en) * | 2005-12-14 | 2007-06-28 | Au Optronics Corp | Liquid crystal display and method for manufacturing the same |
| JP2007266252A (en) * | 2006-03-28 | 2007-10-11 | Toppan Printing Co Ltd | Thin film transistor and manufacturing method thereof |
| US8779430B2 (en) | 2010-05-10 | 2014-07-15 | Sharp Kabushiki Kaisha | Semiconductor device, active matrix substrate, and display device |
| JP5628302B2 (en) * | 2010-05-10 | 2014-11-19 | シャープ株式会社 | Semiconductor device, active matrix substrate, and display device |
| JP2012138549A (en) * | 2010-12-28 | 2012-07-19 | Dainippon Printing Co Ltd | Thin film transistor |
| JP2022121587A (en) * | 2013-09-13 | 2022-08-19 | 株式会社半導体エネルギー研究所 | Display device |
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