JPH0369185A - Hybrid integrated circuit - Google Patents

Hybrid integrated circuit

Info

Publication number
JPH0369185A
JPH0369185A JP20590489A JP20590489A JPH0369185A JP H0369185 A JPH0369185 A JP H0369185A JP 20590489 A JP20590489 A JP 20590489A JP 20590489 A JP20590489 A JP 20590489A JP H0369185 A JPH0369185 A JP H0369185A
Authority
JP
Japan
Prior art keywords
power
control circuit
hybrid integrated
circuit section
circuit part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20590489A
Other languages
Japanese (ja)
Inventor
Fumiyoshi Matsumura
松村　文好
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP20590489A priority Critical patent/JPH0369185A/en
Publication of JPH0369185A publication Critical patent/JPH0369185A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/14—Structural association of two or more printed circuits
    • H05K1/142—Arrangements of planar printed circuit boards in the same plane, e.g. auxiliary printed circuit insert mounted in a main printed circuit

Landscapes

  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

PURPOSE:To prevent a control circuit part from malfunctioning due to heat and further miniaturize an equipment by isolating a power circuit part and the control circuit part of a hybrid integrated circuit thermally through an insulating material with low heat conductivity. CONSTITUTION:A power circuit part where a power element 6 is mounted on a power circuit substrate 2 is formed on a metal substrate 1 with a high heat conductivity. Also, a control circuit substrate 4 where a control element 8 is connected is mounted through a thermally insulating material 3 consisting of an asbestos of a poor heat conductivity, thus forming a control circuit part. Then, each circuit part is connected by a wiring 7 such as Al wire.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は混成集積回路に関し、特に高温度環境下で動作
する装置に搭載して用いられる混成集積回路の構成に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a hybrid integrated circuit, and particularly to the configuration of a hybrid integrated circuit that is mounted and used in a device that operates in a high temperature environment.

〔従来の技術〕[Conventional technology]

従来、エンジン等に搭載して用いられる混ｒＩｉ、集積
回路は、第３図に示すように、電力素子６が固着された
電力回路基板２と制御素子８が固着された制御回路基板
４とが、接着剤１０を介して同一の金属基板１上に接着
された構造となっていた。Conventionally, a hybrid integrated circuit mounted on an engine or the like has a power circuit board 2 to which a power element 6 is fixed and a control circuit board 4 to which a control element 8 is fixed, as shown in FIG. , and had a structure in which they were bonded onto the same metal substrate 1 via an adhesive 10.

そのため、制御回路部は、回路全体が取付ちれる装置の
発熱を直接に受け、更に混成集積回路中の電力回路部の
発熱による温度上昇の影響も受けていた。Therefore, the control circuit section is directly affected by the heat generated by the device to which the entire circuit is attached, and is also affected by the temperature rise caused by the heat generated by the power circuit section in the hybrid integrated circuit.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の混成集積回路においては、電力回路部は
放熱板等に接続される金属板１上に固定されて構成され
ているため、熱伝達特性を良くする効果が得られている
が、制御回路部については取付けられる装置及び内部の
電力回路部の発熱の影響をうけ動作異常を起すという欠
点がある。In the above-mentioned conventional hybrid integrated circuit, the power circuit section is fixed on a metal plate 1 connected to a heat sink etc., which has the effect of improving heat transfer characteristics. The circuit section has a drawback in that it is affected by the heat generated by the attached device and the internal power circuit section, causing malfunctions.

上述した従来の混成集積回路に対し、本発明は、内蔵さ
れる制御回路部が熱的に絶縁されることにより、内燃機
関の外囲器等の高温部に取付けられて使用される際に、
外部の発熱による温度上昇或いは、内蔵される電力回路
部の発熱による温度上昇の影響をうけないという相違点
を有する。In contrast to the conventional hybrid integrated circuit described above, the present invention has a built-in control circuit section that is thermally insulated, so that when it is installed and used in a high-temperature part such as an envelope of an internal combustion engine,
The difference is that it is not affected by temperature rises due to external heat generation or temperature rises due to heat generation in the built-in power circuit section.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の混成集積回路は、電力素子を有する電力回路部
と、前記電力回路部と熱伝導率の低い絶縁材を介して熱
的に分離された制御素子を有する制御回路部とを含んで
構成される。The hybrid integrated circuit of the present invention includes a power circuit section having a power element, and a control circuit section having a control element thermally separated from the power circuit section through an insulating material with low thermal conductivity. be done.

〔実施例〕〔Example〕

第１図は本発明の第１の実施例の断面図である。 FIG. 1 is a sectional view of a first embodiment of the invention.

第１図において１は熱伝導率の高い金属基板であり、う
すいＡｆｆ１２０．等の電力回路基板２上に電力素子６
が搭載され電力回路部が形成されている。また熱伝達の
悪い石綿等からなる熱絶縁材３を介して、制御素子８が
接続された制御回路基板４が搭載され制御回路部が形成
されている。各回路部の接続は、人々線等の配線７によ
り成されており、全回路は外部端子５を通じて外に引出
されている。In FIG. 1, 1 is a metal substrate with high thermal conductivity, and thin Aff120. A power element 6 is mounted on a power circuit board 2 such as
is mounted to form a power circuit section. Further, a control circuit board 4 to which a control element 8 is connected is mounted via a heat insulating material 3 made of asbestos or the like having poor heat transfer, thereby forming a control circuit section. Connections between each circuit section are made by wiring 7 such as a power line, and all the circuits are led out through external terminals 5.

このように構成された第１の実施例によれば、制御回路
部を構成する制御回路基板４が熱絶縁材３を介して固着
されているため、制御素子８は熱により受ける影響が少
くなり動作異常を起すここがなくなる。According to the first embodiment configured in this way, since the control circuit board 4 constituting the control circuit section is fixed via the heat insulating material 3, the control element 8 is less affected by heat. This eliminates areas that can cause malfunctions.

第２図は本発明の第２の実施例の断面図である。FIG. 2 is a sectional view of a second embodiment of the invention.

第２図において、熱伝導率の高い金属基板ＩＡは、内燃
機関等、高温で作動する装置の外囲器に取付けられるも
のであり、その表面には絶縁膜を介して配線が形成され
ており、電力素子６Ａと共に電力回路部を構成している
。ケース１２はプラスチック樹脂で形成されており電力
回路部の外部端子５Ｂを内蔵している。そして制御回路
基板４Ａはこのケース１２を介して電力回路基板１より
熱的に分離されており、制御素子８Ａと共に制御回路部
を構成している。In Figure 2, a metal substrate IA with high thermal conductivity is attached to the envelope of a device that operates at high temperatures, such as an internal combustion engine, and wiring is formed on its surface via an insulating film. , constitutes a power circuit section together with the power element 6A. The case 12 is made of plastic resin and contains an external terminal 5B of the power circuit section. The control circuit board 4A is thermally isolated from the power circuit board 1 via the case 12, and constitutes a control circuit section together with the control element 8A.

このように構成された第２の実施例によれば、制御回路
基板４Ａがケース１２により分離されているために、外
部の発熱による温度上昇の影響をうけないという利点が
ある。According to the second embodiment configured in this manner, since the control circuit board 4A is separated by the case 12, there is an advantage that it is not affected by temperature rise due to external heat generation.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、混成集積回路の電力回路
部と制御回路部とを熱伝導率の低い絶縁材を介して熱的
に分離することにより、熱による制御回路部の動作異常
がなくなるとうい効果がある。このため、内燃機関等高
温環境で動作する機器の制御に混成集積回路を一体化し
て取付けることができるため、機器を更に小形化できる
という効果もある。As explained above, the present invention eliminates abnormal operation of the control circuit section due to heat by thermally separating the power circuit section and the control circuit section of a hybrid integrated circuit through an insulating material with low thermal conductivity. It has a great effect. Therefore, the hybrid integrated circuit can be integrated and installed in the control of devices such as internal combustion engines that operate in high-temperature environments, which has the effect of further downsizing the devices.

【図面の簡単な説明】[Brief explanation of drawings]

第１図及び第２図は本発明の第１及び第２の実施例の断
面図、第３図は従来の混成集積回路の断面図である。 １、ＩＡ・・・金属基板、２・・・電力回路基板、３・
・・熱絶縁材、４，４Ａ・・・制御回路基板、５．５Ａ
。 ５Ｂ・・・外部端子、６，６Ａ・・・電力素子、７・・
・配線、８，８Ａ・・・制御素子、１０・・・接着剤、
１２・・・ケース。 第２図 第２図1 and 2 are cross-sectional views of first and second embodiments of the present invention, and FIG. 3 is a cross-sectional view of a conventional hybrid integrated circuit. 1. IA...metal board, 2... power circuit board, 3.
・・Heat insulation material, 4,4A ・・Control circuit board, 5.5A
. 5B...External terminal, 6,6A...Power element, 7...
・Wiring, 8,8A...control element, 10...adhesive,
12...Case. Figure 2Figure 2

Claims (1)

【特許請求の範囲】[Claims] 　電力素子を有する電力回路部と、前記電力回路部と熱
伝導率の低い絶縁材を介して熱的に分離された制御素子
を有する制御回路部とを含むことを特徴とする混成集積
回路。1. A hybrid integrated circuit comprising: a power circuit section having a power element; and a control circuit section having a control element thermally separated from the power circuit section via an insulating material with low thermal conductivity.
JP20590489A 1989-08-08 1989-08-08 Hybrid integrated circuit Pending JPH0369185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20590489A JPH0369185A (en) 1989-08-08 1989-08-08 Hybrid integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20590489A JPH0369185A (en) 1989-08-08 1989-08-08 Hybrid integrated circuit

Publications (1)

Publication Number Publication Date
JPH0369185A true JPH0369185A (en) 1991-03-25

Family

ID=16514678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20590489A Pending JPH0369185A (en) 1989-08-08 1989-08-08 Hybrid integrated circuit

Country Status (1)

Country Link
JP (1) JPH0369185A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5555520A (en) * 1993-12-03 1996-09-10 Kabushiki Kaisha Toshiba Trench capacitor cells for a dram having single monocrystalline capacitor electrode
WO2000074446A1 (en) * 1999-05-31 2000-12-07 Tyco Electronics Logistics Ag Intelligent power module
WO2004093186A1 (en) * 2003-04-15 2004-10-28 Denki Kagaku Kogyo Kabushiki Kaisha Metal-base circuit board and its manufacturing method
JP2011146665A (en) * 2010-01-12 2011-07-28 Samsung Electro-Mechanics Co Ltd Hybrid heat dissipation substrate, and method of manufacturing the same
JP2012004525A (en) * 2010-06-15 2012-01-05 Samsung Electro-Mechanics Co Ltd Hybrid heat-radiating substrate and method of manufacturing the same
WO2018180356A1 (en) * 2017-03-30 2018-10-04 株式会社オートネットワーク技術研究所 Circuit device
JP2022157727A (en) * 2021-03-31 2022-10-14 株式会社Flosfia Semiconductor device and semiconductor system

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5555520A (en) * 1993-12-03 1996-09-10 Kabushiki Kaisha Toshiba Trench capacitor cells for a dram having single monocrystalline capacitor electrode
WO2000074446A1 (en) * 1999-05-31 2000-12-07 Tyco Electronics Logistics Ag Intelligent power module
US6882538B1 (en) 1999-05-31 2005-04-19 Tyco Electronics Logistics Ag Intelligent power module
WO2004093186A1 (en) * 2003-04-15 2004-10-28 Denki Kagaku Kogyo Kabushiki Kaisha Metal-base circuit board and its manufacturing method
US7709939B2 (en) 2003-04-15 2010-05-04 Denki Kagaku Kogyo Kabushiki Kaisha Metal-base circuit board and its manufacturing method
JP2011146665A (en) * 2010-01-12 2011-07-28 Samsung Electro-Mechanics Co Ltd Hybrid heat dissipation substrate, and method of manufacturing the same
JP2012004525A (en) * 2010-06-15 2012-01-05 Samsung Electro-Mechanics Co Ltd Hybrid heat-radiating substrate and method of manufacturing the same
US9107313B2 (en) 2010-06-15 2015-08-11 Samsung Electro-Mechanics Co., Ltd. Method of manufacturing a hybrid heat-radiating substrate
WO2018180356A1 (en) * 2017-03-30 2018-10-04 株式会社オートネットワーク技術研究所 Circuit device
JP2018170461A (en) * 2017-03-30 2018-11-01 株式会社オートネットワーク技術研究所 Circuit device
CN110914979A (en) * 2017-03-30 2020-03-24 株式会社自动网络技术研究所 Circuit arrangement
US10930578B2 (en) 2017-03-30 2021-02-23 Autonetworks Technologies, Ltd. Circuit device
CN110914979B (en) * 2017-03-30 2023-09-15 株式会社自动网络技术研究所 Circuit arrangement
JP2022157727A (en) * 2021-03-31 2022-10-14 株式会社Flosfia Semiconductor device and semiconductor system

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