JPH036010A - Manufacture of aluminum electrode for electrolytic capacitor - Google Patents
Manufacture of aluminum electrode for electrolytic capacitorInfo
- Publication number
- JPH036010A JPH036010A JP13932789A JP13932789A JPH036010A JP H036010 A JPH036010 A JP H036010A JP 13932789 A JP13932789 A JP 13932789A JP 13932789 A JP13932789 A JP 13932789A JP H036010 A JPH036010 A JP H036010A
- Authority
- JP
- Japan
- Prior art keywords
- vapor
- titanium
- deposited film
- aluminum
- capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 50
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 239000003990 capacitor Substances 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000010936 titanium Substances 0.000 claims abstract description 27
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000007740 vapor deposition Methods 0.000 claims abstract description 14
- 238000001704 evaporation Methods 0.000 abstract description 18
- 230000008020 evaporation Effects 0.000 abstract description 16
- 239000011888 foil Substances 0.000 abstract description 11
- 238000005530 etching Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000000541 cathodic arc deposition Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 102100025248 C-X-C motif chemokine 10 Human genes 0.000 description 1
- 101000858088 Homo sapiens C-X-C motif chemokine 10 Proteins 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、電解コンデンサ用アルミニウムｉＳ極の製造
方法に関し、更に詳しくは、高純度アルミニウムの表面
に蒸着によりチタンを付着させて表面にチタン層からな
る蒸着膜を形成させることからなる電解コンデンサ用ア
ルミニウム電極の製造方法に関する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a method of manufacturing an aluminum iS electrode for an electrolytic capacitor, and more specifically, to a method of manufacturing an aluminum iS electrode for an electrolytic capacitor, and more specifically, a method of depositing titanium on the surface of high-purity aluminum by vapor deposition to form a titanium layer on the surface. The present invention relates to a method of manufacturing an aluminum electrode for an electrolytic capacitor, which comprises forming a vapor-deposited film comprising:
［従来の技術］
電解コンデンサは、小形、大容量、安価で、整流出力の
平滑化等に優れた特性を示し各種電気・電子機器の重要
な構成要素の一つであり、一般に表面を電解酸化によっ
て酸化被膜に変えたアルミニウム箔を陽極とし、この酸
化被膜を誘電体とし集電陰極との間に電解液を介在させ
て作成される。[Prior art] Electrolytic capacitors are small, large-capacity, inexpensive, and have excellent properties such as smoothing rectified output, and are one of the important components of various electrical and electronic devices. It is created by using an aluminum foil that has been changed into an oxide film as an anode, using this oxide film as a dielectric, and interposing an electrolyte between it and a current collecting cathode.
電解コンデンサは、近年小型化がますます要求されてお
り、より大きな静電容量の電解コンデンサを得るために
、アルミニウム箔の表面に高倍率のエツチング処理を施
すことにより表面積の増大か図られている。材料の表面
に複雑な凹凸を与えることにより表面積を増大させるこ
の技術は、現在では高度に洗練されているが、この技術
による表面積増大のみによって電解コンデンサの静電容
量を増加させるのは次第に困難になりつつある。In recent years, electrolytic capacitors have been increasingly required to be more compact, and in order to obtain electrolytic capacitors with larger capacitance, efforts are being made to increase the surface area by performing a high-magnification etching process on the surface of aluminum foil. . This technique of increasing the surface area by creating complex irregularities on the surface of a material is now highly sophisticated, but it is becoming increasingly difficult to increase the capacitance of electrolytic capacitors solely by increasing the surface area using this technique. It is becoming.
アルミニウム材料の表面積増大には限界があり、表面積
の増大によらない静電容量の増加の手段として、陽極側
電極の表面に形成される誘電体層の酸化物の比誘電率を
高めればやはり静電容量を増大させることが可能である
。There is a limit to increasing the surface area of aluminum materials, and as a means of increasing capacitance without increasing the surface area, increasing the dielectric constant of the oxide of the dielectric layer formed on the surface of the anode side electrode will also increase the static capacity. It is possible to increase the capacitance.
酸化アルミニウムの比誘電率は７〜１０程度であるが、
他の弁作用金属である酸化タンタルの比誘電率は２５前
後、酸化チタンの比誘電率は６６程度と高く、当然この
ような酸化物を用いる方が静電容量は増大するが、一般
の電解コンデンサにおいてアルミニウムが使用されるの
はタンタルやチタンに比ベコスｌ〜的に遥かに優れてい
るためといえる。The dielectric constant of aluminum oxide is about 7 to 10,
Other valve metals, tantalum oxide, have a dielectric constant of around 25, and titanium oxide has a high dielectric constant of around 66. Naturally, using such oxides increases capacitance, but general electrolytic The reason why aluminum is used in capacitors is that it is far superior to tantalum and titanium in terms of cost.
これを解決する手段として、アルミニウム材料の表面に
、より比誘電率の大きな他の弁作用金属等を付着または
溶着させて薄膜を形成させ、コストを増加させることな
く比誘電率の増大を図るものがある９例えば、真空蒸着
法、イオンブレーティング法またはスパッタリング法の
ような物理的方法によりアルミニウム基板上に所望の金
属を蒸着させ、表面にアルミニウムと蒸着金属との混在
複合膜なる蒸着膜を形成させることによって大容量を得
るものである。しかしながら、前記した方法では、アル
ミニウム基板上におけるチタンのような金属の蒸着膜の
密着性やｆｆ１ｉ密性が必ずしも十分ではなく、特に蒸
着技術を改良して、より優れた電解コンデンサ用アルミ
ニウム電極を、製造する余地が残されていた。前記した
蒸着技術を用いる方法では、処理時間が長くかかるなめ
生産効率の点で不十分である。As a means to solve this problem, a thin film is formed by attaching or welding another valve metal with a higher relative permittivity to the surface of the aluminum material, thereby increasing the relative permittivity without increasing cost. For example, a desired metal is deposited on an aluminum substrate by a physical method such as a vacuum evaporation method, an ion blasting method, or a sputtering method, and a deposited film, which is a mixed composite film of aluminum and the deposited metal, is formed on the surface. By doing so, large capacity can be obtained. However, in the above-mentioned method, the adhesion and ff1i density of the vapor-deposited film of metal such as titanium on the aluminum substrate are not necessarily sufficient. There was still room for manufacturing. The method using the vapor deposition technique described above is insufficient in terms of processing time and production efficiency.
一方、電解コンデンサは一般に陰極側にもアルミニウム
を用いることが多いが、アルミニウムは自然酸化皮膜に
よる極めて薄い絶縁層が形成されてしまう、電解コンデ
ンサの静電容量は、この陰極側の薄い絶縁層による静電
容量と陽極側の静電容量との合成容量によって形成され
るなめ、高い静電容量値を得るなめには、陰極側の静電
容量が陽極側の静電容量に比べて極めて高い値を持つか
、あるいは全く静電容量を持たないものが望ましい６［
発明が解決しようとする課題］
本発明は、高純度アルミニウムの表面に蒸着によりチタ
ンを付着させて表面にチタン層からなる蒸着膜を形成さ
せることからなる零Ｍｌコンデンサ用アルミニウム電極
の製造方法を改良することにより、蒸着膜の密着性およ
び緻密性を向上させ、処理時間を大幅に短縮させると共
に静電容量を増加させ得る電解コンデンサ用アルミニウ
ム電極の製造方法を提ｆ共することを目的とする。On the other hand, electrolytic capacitors generally use aluminum on the cathode side as well, but aluminum has an extremely thin insulating layer formed by a natural oxide film.The capacitance of an electrolytic capacitor is due to this thin insulating layer on the cathode side. It is formed by the combined capacitance of the capacitance and the capacitance on the anode side, so in order to obtain a high capacitance value, the capacitance on the cathode side must be extremely high compared to the capacitance on the anode side. or no capacitance at all6 [
Problems to be Solved by the Invention] The present invention improves a method for manufacturing an aluminum electrode for a zero-Ml capacitor, which involves depositing titanium on the surface of high-purity aluminum by vapor deposition to form a vapor-deposited film consisting of a titanium layer on the surface. The purpose of the present invention is to provide a method for manufacturing an aluminum electrode for an electrolytic capacitor that can improve the adhesion and density of the deposited film, significantly shorten the processing time, and increase the capacitance.
［課題を解決するための手段］
本発明によれば、電解コンデンサ用アルミニウム電極を
製造するに際し、高純度アルミニウムの表面に蒸着によ
りチタンを付着させて表面にチタン層からなる蒸着膜を
形成させることからなり、前記蒸着を陰極アーク蒸着法
により行うことを特徴とする電解コンデンサ用アルミニ
ウム電極の製造方法が提供される。[Means for Solving the Problems] According to the present invention, when manufacturing an aluminum electrode for an electrolytic capacitor, titanium is attached to the surface of high-purity aluminum by vapor deposition to form a vapor deposited film consisting of a titanium layer on the surface. There is provided a method for manufacturing an aluminum electrode for an electrolytic capacitor, characterized in that the vapor deposition is performed by a cathodic arc vapor deposition method.
高純度アルミニウムを、エツチング処理を施した高純度
アルミニウム箔とすれば好適である。It is preferable that the high-purity aluminum be a high-purity aluminum foil that has been subjected to an etching treatment.
１０−７〜１０−’Ｔｏｒｒの圧力で陰極アーク蒸着を
行えば好適である。It is preferred to carry out cathodic arc deposition at a pressure of 10-7 to 10-' Torr.
アルゴン、ヘリウム、並びに窒素よりなる群から選択さ
れる不活性ガス雰囲気中で陰極アーク蒸着を行えば好適
である。Preferably, cathodic arc deposition is carried out in an inert gas atmosphere selected from the group consisting of argon, helium, and nitrogen.
１００〜５００ ｍｒｎの蒸発距離で陰極アーク蒸着を
行えば好適である。Cathodic arc deposition with an evaporation distance of 100 to 500 mrn is preferred.
１×１０づ〜５１１１ｇ／ ｃｍ”秒の蒸発速度で陰極
アーク蒸着を行えば好適である。Cathodic arc deposition is preferably carried out with an evaporation rate of 1.times.10 g/cm" seconds to 5111 g/cm" seconds.
Ｌ ｘ １０−’ 〜１．Ｏｍｑ／ｃｎ＋”の蒸着量で
陰極アーク蒸着を行えば好適である。L x 10-' ~1. It is preferable to perform cathodic arc deposition with a deposition amount of Omq/cn+''.
蒸着膜の厚さを０．０５〜３μとすれば好適である。こ
の程度の厚さの蒸着膜に対し、蒸着処理時間は、０．５
〜３０分とすることができる。It is preferable that the thickness of the deposited film is 0.05 to 3 μm. For a deposited film of this thickness, the deposition processing time is 0.5
~30 minutes.
前記した＃極アーク蒸着により高純度アルミニウムの表
面にチタンを付着さ、せ、表面にチタン層からなる蒸着
膜を形成させ、これを用いて通常の陽極酸化を行って電
解コンデンサ用アルミニウム電極を製造する。Titanium is attached to the surface of high-purity aluminum by the above-described #polar arc evaporation, and a vapor-deposited film consisting of a titanium layer is formed on the surface, and this is used to perform normal anodic oxidation to manufacture aluminum electrodes for electrolytic capacitors. do.
［作用］
実質的真空下で、金属ターゲット（蒸発源）を陰極とし
てアーク放電を起こすと、アークはターゲット表面上に
アークスポットを形成し、ターゲット表面上をランダム
に走り回る。[Operation] When an arc discharge is caused under a substantial vacuum using a metal target (evaporation source) as a cathode, the arc forms an arc spot on the target surface and runs around randomly on the target surface.
アークスポットに集中するアーク電流のエネルギにより
、ターゲット材は瞬時に溶融蒸発すると同時に金属イオ
ンとなり、真空中に放出される。この際、バイアス電圧
を被コーテイング物に印加することにより、この金属イ
オンは、加速された反応ガス粒子と共に被コーテイング
物□の表面に密着し、緻密な膜を生成する。Due to the energy of the arc current concentrated at the arc spot, the target material is instantaneously melted and vaporized, simultaneously turning into metal ions and being emitted into the vacuum. At this time, by applying a bias voltage to the object to be coated, the metal ions, together with the accelerated reaction gas particles, adhere to the surface of the object to be coated □, forming a dense film.
本発明は、このような陰極アーク蒸着の原理を応用する
ものであり、金属ターゲット（蒸発源）としてチタンを
用い、被コーテイング物として高純度アルミニウムを用
いるものである。The present invention applies the principle of such cathodic arc evaporation, and uses titanium as a metal target (evaporation source) and high-purity aluminum as the object to be coated.
本発明の陰極アーク蒸１着法と従来のイオンブレーティ
ング法およびスパッタリング法について、基板上のイオ
ン化率および粒子エネルギを比較して第１表に示す。な
お、・イオン化率は、基板単位面積に到達した原子の内
、イオン化していたものの数をバーセン１〜で表したも
のである。Table 1 shows a comparison of the ionization rate and particle energy on the substrate between the cathodic arc evaporation method of the present invention and the conventional ion blating method and sputtering method. Note that the ionization rate is the number of ionized atoms that reached a unit area of the substrate expressed in units of 1~.
第１表
Ｉアーク イオン スパッタリン
グ法１法 ブレーティング浪
イオン化１ｌ（ｘ） ３０〜５０ ２〜８
２〜８に＋ＩエネルギｅＶ） １０〜１０
０ ０．１〜１ ０．２〜１０このような陰極
アーク蒸着法によれば、イオン化率が著しく大きく、高
イオンエネルギであるため、反応効率か向上し、アルミ
ニウム基板とチタンとの密着Ｉ注を顕著に向とさせるこ
とができる。そしてこのアルミニウム基板を陽極として
用いる場合には、表面を酸化処理して比誘電率の高い酸
化チタンとすることで静電容量の増大を図ることができ
る。また陰極として用いる場合には、酸化処理を行わず
に用いれば、チタンか金属のままであれは陰極側に静電
容量が発生せず、合成容量による静電容量の低減か起き
ないし、自然酸化皮膜が形成されても比誘電率が高いこ
とから、静電容ｌの低減は少ない。Table 1 I Arc ion sputtering method 1 method Brating wave ionization 1l(x) 30-50 2-8
2 to 8 +I energy eV) 10 to 10
0 0.1~1 0.2~10 According to this cathodic arc evaporation method, the ionization rate is extremely high and the ion energy is high, so the reaction efficiency is improved and the adhesion between the aluminum substrate and titanium is improved. can be significantly improved. When this aluminum substrate is used as an anode, the capacitance can be increased by oxidizing the surface to make titanium oxide with a high dielectric constant. In addition, when used as a cathode, if titanium or metal is used without oxidation treatment, no capacitance will be generated on the cathode side, and the capacitance will not be reduced due to the composite capacitance, and natural oxidation will not occur. Even if a film is formed, since the dielectric constant is high, the reduction in capacitance l is small.
「発明の効果］
本発明によれは、高純度アルミニウムの表面に蒸着によ
りチタンを付着させて表面にチタン層からなる蒸着膜を
形成させることからなる電解コンデンサ用アルミニウム
ｔ 極の製造方法を改良することにより、蒸着膜の密着
性および緻密性を向上させ、処理時間を大幅に短縮させ
ると共に静電容量を増加させ得る電解コンデンサ用アル
ミニウム電極の製造方法が提供される。[Effects of the Invention] The present invention improves a method for manufacturing an aluminum t-electrode for an electrolytic capacitor, which comprises depositing titanium on the surface of high-purity aluminum by vapor deposition to form a vapor-deposited film consisting of a titanium layer on the surface. This provides a method for producing an aluminum electrode for an electrolytic capacitor that can improve the adhesion and density of the deposited film, significantly shorten the processing time, and increase the capacitance.
［実施例］
以下に実施例により本発明を更に詳４．［ｌ］ ４こ説
明するが、本発明は以下の実施例にのみ限定されるもの
ではない。[Examples] The present invention will be explained in more detail with reference to Examples below. [l] 4. However, the present invention is not limited only to the following examples.
聚九■ユ
常法によりエツチング処理を施した高純度アルミニウム
箔５０ｘ １００ ｎｍを使用し、トークルチャンバ圧
力２〜１０ｘ １０−’Ｔｏｒｒ、蒸発距離２００ＩＩ
ｍ、蒸発速度ｏ、ｉμ／分とし、２分間陰極アーク蒸着
を行い、チタン蒸着膜厚０．２μの蒸着膜を形成させた
。High-purity aluminum foil 50 x 100 nm etched by a conventional method was used, the torque chamber pressure was 2 to 10 x 10-' Torr, and the evaporation distance was 200 II.
Cathode arc deposition was performed for 2 minutes at m, evaporation rate o, and iμ/min to form a titanium deposited film with a thickness of 0.2 μm.
陰極アーク蒸着に使用する装置の概略を第１図に示す、
この装置を用い、実質的真空下で、チタンからなる金属
ターゲット（蒸発源）１０を陰極としてアーク放電を起
こすと、アークはターゲット表面上にアークスポットを
形成し、ターゲット表面上をランタムに走り回る結果、
アークスポットに集中するアーク電流のエネルギ（１０
０Ａ）により、ターゲツト材は瞬時に溶融蒸発すると同
時に金属イオン１２となり、真空中に放出され、この際
、高純度アルミニウム箔とする被コーテイング物１４に
対しバイアス電圧を印加することにより、この金属イオ
ンは、加速された反応ガス粒子１６と共に被コーテイン
グ物１４の表面に密着し、緻密な膜を生成する。なお、
第１図中、１８および２０はアーク電源、２２はバイア
ス電源、２４は回転テーブル、２６はガス入口、２８は
ガス出口、３０は真空チャンバである。The outline of the equipment used for cathodic arc evaporation is shown in Figure 1.
When this device is used to generate an arc discharge under a substantial vacuum using a metal target (evaporation source) 10 made of titanium as a cathode, the arc forms an arc spot on the target surface and runs around the target surface in a random manner. ,
The energy of the arc current concentrated at the arc spot (10
0A), the target material instantaneously melts and evaporates into metal ions 12, which are released into vacuum.At this time, by applying a bias voltage to the object to be coated, which is a high-purity aluminum foil, the metal ions together with the accelerated reaction gas particles 16 adhere to the surface of the object to be coated 14 to form a dense film. In addition,
In FIG. 1, 18 and 20 are arc power sources, 22 is a bias power source, 24 is a rotary table, 26 is a gas inlet, 28 is a gas outlet, and 30 is a vacuum chamber.
この蒸着膜を有するアルミニウム箔を用い、通常の陽極
酸化を行って電解コンデンサ用アルミニウム電極を製造
し、更にこの電極を使用する電解コンデンサを製造した
。Using the aluminum foil having this vapor-deposited film, an aluminum electrode for an electrolytic capacitor was manufactured by performing normal anodic oxidation, and an electrolytic capacitor using this electrode was further manufactured.
よ較ニュ
常法によりエツチング処理を施した高純度アルミニウム
箔５Ｑｘ １００ ｒｕｎを使用し、１×ｉｏ−’■ｏ
ｒｒのアルゴン雰囲気中で、蒸発距離２００１’ｊ１１
１．蒸発速度１１１ｇ／ｃｍ２秒、蒸着量０．４ｍＱ／
ａｎ２として、イオンブレーティング法によるチタン蒸
着を行い、蒸着膜を形成させた、この蒸着膜を有するア
ルミニウム箔を用い、通常の＠＠酸化を行って電解コン
デンサ用アルミニウム電極を製造し、更にこの電極を（
使用する電解コンデンサを製造した。Using high-purity aluminum foil 5Qx 100 runs etched by a conventional method, 1×io-'■o
In an argon atmosphere of rr, the evaporation distance is 2001'j11
1. Evaporation rate 111g/cm2 seconds, evaporation amount 0.4mQ/
As an2, an aluminum electrode for an electrolytic capacitor was manufactured by performing normal oxidation using an aluminum foil having a vapor-deposited film formed by vapor-depositing titanium using the ion-blating method, and of(
The electrolytic capacitor used was manufactured.
匿敷皿ニ
スパッタリング法による以外は比較例１と同様に蒸着膜
を形成させ、この蒸着膜を有するアルミニウム箔を用い
、通常の陽極酸化を行って電解コンデンサ用アルミニウ
ム電極を製造し、更にこの電極を使用する電解コンデン
サを製造した。A vapor deposited film was formed in the same manner as in Comparative Example 1 except that the plate sputtering method was used, and the aluminum foil having this vapor deposited film was used to perform normal anodic oxidation to produce an aluminum electrode for an electrolytic capacitor. Manufactured an electrolytic capacitor using
庭監■ユ
常法によりエツチング処理を施した高純度アルミニウム
箔を使用し、蒸着膜を形成させることなく、通常の陽極
酸化を行って電解コンデンサ用アルミニウム電極を装つ
貴し、更にこの電極を使用する電解コンデンサを製造し
た。Using high-purity aluminum foil that has been etched using a conventional process, without forming a vapor deposited film, the aluminum electrodes for electrolytic capacitors are fabricated by ordinary anodic oxidation. The electrolytic capacitor used was manufactured.
前記したようにして製造した蒸着膜を有するアルミニウ
ム基板におけるチタンの密着性の比較は、第２表に示す
通りである。なお、参考として５０グラム荷重における
それぞれの硬度を併せて示す。Table 2 shows a comparison of the adhesion of titanium to aluminum substrates having vapor-deposited films produced as described above. For reference, the hardness of each specimen under a load of 50 grams is also shown.
第２表
！に釈１ 比ＵＮＩ 比Ｉ２付着力（ｋ
ｕｓ） ３．３５ ２．４０ ２．２０硬度（
ｋＱ／１ｍ１２） ２７００ ２４００ ２２０
０また、前記したようにして製造した電解コンデンサの
静電容量（μＦ／ｃｒｇ２）は第３表に示す通りであっ
た。Table 2! 1 Ratio UNI Ratio I2 Adhesion force (k
us) 3.35 2.40 2.20 hardness (
kQ/1m12) 2700 2400 220
Further, the capacitance (μF/crg2) of the electrolytic capacitor manufactured as described above was as shown in Table 3.
第３表
実諷例１ 比１９！１ １ｔｌｌ１例２
比較例３静電容立 １５３０ １２００ １
０００ ４、Table 3 Practical example 1 Ratio 19!1 1tll1 example 2
Comparative Example 3 Electrostatic capacity 1530 1200 1
000 4,
第１図は、陰極アーク蒸着に使用する装置の概略を示す
図である。
１０・・・チタンからなる金属ターゲット（蒸発源）１
２・・・金属イオン
１４・・・高純度アルミニウムとする被コーテイング物
１６・・・反応ガス粒子 １８・・・アーク電源２０
・・・アーク電源 ２２・・・バイアス電源２４・
・・回転テーブル ２６・・・ガス入口２８・・・ガ
ス出口 ３０・・・真空チャンバＦＩＧ、 １FIG. 1 is a diagram schematically showing an apparatus used for cathodic arc deposition. 10...Metal target (evaporation source) 1 made of titanium
2... Metal ions 14... Object to be coated with high purity aluminum 16... Reactive gas particles 18... Arc power source 20
...Arc power supply 22...Bias power supply 24.
...Rotary table 26...Gas inlet 28...Gas outlet 30...Vacuum chamber FIG, 1
Claims (1)
に際し、高純度アルミニウムの表面に蒸着によりチタン
を付着させて表面にチタン層からなる蒸着膜を形成させ
ることからなり、前記蒸着を陰極アーク蒸着法により行
うことを特徴とする電解コンデンサ用アルミニウム電極
の製造方法。(1) When manufacturing aluminum electrodes for electrolytic capacitors, titanium is deposited on the surface of high-purity aluminum by vapor deposition to form a vapor deposited film consisting of a titanium layer on the surface, and the vapor deposition is performed by cathodic arc vapor deposition. A method for manufacturing an aluminum electrode for an electrolytic capacitor, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1139327A JPH0748463B2 (en) | 1989-06-02 | 1989-06-02 | Method for manufacturing aluminum electrode for electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1139327A JPH0748463B2 (en) | 1989-06-02 | 1989-06-02 | Method for manufacturing aluminum electrode for electrolytic capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH036010A true JPH036010A (en) | 1991-01-11 |
| JPH0748463B2 JPH0748463B2 (en) | 1995-05-24 |
Family
ID=15242734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1139327A Expired - Fee Related JPH0748463B2 (en) | 1989-06-02 | 1989-06-02 | Method for manufacturing aluminum electrode for electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0748463B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02280310A (en) * | 1989-04-21 | 1990-11-16 | Kobe Steel Ltd | Manufacture of electrode material for electrolytic capacitor |
-
1989
- 1989-06-02 JP JP1139327A patent/JPH0748463B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02280310A (en) * | 1989-04-21 | 1990-11-16 | Kobe Steel Ltd | Manufacture of electrode material for electrolytic capacitor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0748463B2 (en) | 1995-05-24 |
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