JPH0353843U - - Google Patents

Info

Publication number
JPH0353843U
JPH0353843U JP1989115548U JP11554889U JPH0353843U JP H0353843 U JPH0353843 U JP H0353843U JP 1989115548 U JP1989115548 U JP 1989115548U JP 11554889 U JP11554889 U JP 11554889U JP H0353843 U JPH0353843 U JP H0353843U
Authority
JP
Japan
Prior art keywords
pellet
dummy electrode
electrode
semiconductor device
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1989115548U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1989115548U priority Critical patent/JPH0353843U/ja
Publication of JPH0353843U publication Critical patent/JPH0353843U/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165Reinforcing structures
    • H01L2224/02166Collar structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本考案の一実施例に係る半導体装置
の部分縦断面図、第2図は、同じくペレツト上の
ダミー電極とパツド電極の配置を示す部分平面図
、第3図は、同じくペレツト上のダミー電極とパ
ツド電極の配置の他の例を示す平面図、第4図は
、同じくペレツト上のダミー電極とパツド電極の
配置のさらに他の例を示す部分平面図、第5図は
、従来例を示す半導体装置の部分縦断面図である
。 1……ペレツト、3……パツド電極、4……ダ
ミー電極、5……絶縁膜、5b……開口部。
FIG. 1 is a partial vertical sectional view of a semiconductor device according to an embodiment of the present invention, FIG. 2 is a partial plan view showing the arrangement of dummy electrodes and pad electrodes on a pellet, and FIG. FIG. 4 is a plan view showing another example of the arrangement of the above dummy electrodes and pad electrodes, FIG. 4 is a partial plan view showing still another example of the arrangement of the dummy electrodes and pad electrodes on the pellet, and FIG. FIG. 2 is a partial longitudinal cross-sectional view of a semiconductor device showing a conventional example. 1... Pellet, 3... Pad electrode, 4... Dummy electrode, 5... Insulating film, 5b... Opening.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] ペレツト上のパツド電極の少なくとも外縁側に
ダミー電極が設けられ、かつ、ペレツト上を覆う
絶縁膜にダミー電極に通じる開口部が設けられて
いることを特徴とする半導体装置。
A semiconductor device characterized in that a dummy electrode is provided at least on the outer edge side of a pad electrode on a pellet, and an opening communicating with the dummy electrode is provided in an insulating film covering the pellet.
JP1989115548U 1989-09-29 1989-09-29 Pending JPH0353843U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989115548U JPH0353843U (en) 1989-09-29 1989-09-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989115548U JPH0353843U (en) 1989-09-29 1989-09-29

Publications (1)

Publication Number Publication Date
JPH0353843U true JPH0353843U (en) 1991-05-24

Family

ID=31663875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989115548U Pending JPH0353843U (en) 1989-09-29 1989-09-29

Country Status (1)

Country Link
JP (1) JPH0353843U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015170778A (en) * 2014-03-07 2015-09-28 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method of the same
CN106328626A (en) * 2015-06-30 2017-01-11 精工半导体有限公司 Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015170778A (en) * 2014-03-07 2015-09-28 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method of the same
CN106328626A (en) * 2015-06-30 2017-01-11 精工半导体有限公司 Semiconductor device
JP2017017152A (en) * 2015-06-30 2017-01-19 エスアイアイ・セミコンダクタ株式会社 Semiconductor device
CN106328626B (en) * 2015-06-30 2020-03-17 艾普凌科有限公司 Semiconductor device with a plurality of semiconductor chips

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