JPH0353628B2 - - Google Patents

Info

Publication number
JPH0353628B2
JPH0353628B2 JP15942081A JP15942081A JPH0353628B2 JP H0353628 B2 JPH0353628 B2 JP H0353628B2 JP 15942081 A JP15942081 A JP 15942081A JP 15942081 A JP15942081 A JP 15942081A JP H0353628 B2 JPH0353628 B2 JP H0353628B2
Authority
JP
Japan
Prior art keywords
photoreceptor
protective layer
layer
comparative example
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15942081A
Other languages
Japanese (ja)
Other versions
JPS5860748A (en
Inventor
Shigeru Yagi
Yasunari Okugawa
Koichi Yamamoto
Kazuaki Omi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP15942081A priority Critical patent/JPS5860748A/en
Priority to GB08221347A priority patent/GB2106659B/en
Priority to DE3228218A priority patent/DE3228218C2/en
Priority to US06/402,700 priority patent/US4444862A/en
Publication of JPS5860748A publication Critical patent/JPS5860748A/en
Publication of JPH0353628B2 publication Critical patent/JPH0353628B2/ja
Granted legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/14—Inert intermediate or cover layers for charge-receiving layers
    • G03G5/142—Inert intermediate layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/14—Inert intermediate or cover layers for charge-receiving layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)

Description

【発明の詳现な説明】 本発明は保護局を有する電子写真甚感光䜓に関
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrophotographic photoreceptor having a protective layer.

垯電、露光、珟像等のプロセスを含む電子写真
方匏においお甚いられる感光䜓ずしおは倚くのも
のが実甚化されおいる䟋えば、米囜特蚱第
2297619号参照。䟋えば、適圓な導電性基板䞊に
有機光導電材料を塗垃あるいは蒞着などにより、
盎接蚭けたもの、あるいは䞊蚘材料を適圓な有機
バむンダヌずずもに蚭けたもの、あるいはバむン
ダヌ䞭にZnO、CdS、TiO2等の無機光導電材料
を分散させたもの、あるいは無定圢セレン又はそ
の合金などを蒞着したもの、あるいは䞊蚘の各皮
の光導電局を局以䞊に積局したものなどが甚い
られおいる䟋えば特公昭45−5394号、特公昭46
−3005号、特公昭49−14271号参照。これらの感
光䜓では、その電気的及び光孊的性質ず機械的性
質ずを䞡立させるために、あるいはこれらの性質
を䞀局向䞊か぀安定させるために、たた堎合によ
぀おは珟像等のプロセスにおける特性を向䞊させ
るために、感光䜓衚面に衚面局を蚭けるこずが提
案されおいる。この衚面局の぀は保護局ず称さ
れるものであ぀お、䟋えば暹脂薄膜を衚面に蚭
け、垯電及び画像露光カヌル゜ンプロセスに
より朜像圢成を行うものである。しかし、この様
な保護局を蚭けた感光䜓を甚いるず倚くの堎合に
高い残留電䜍ずその倧幅なサむクル䞊昇が芋られ
る。この高い残留電䜍ずサむクル䞊昇は保護局を
1Ό以䞋にするこずで、かなり改善できるが、皮
膜がはなれやすくなり、長時間の䜿甚に耐えない
ものになる。別な衚面局ずしおは、絶瞁局ず称さ
れる電気抵抗の高い暹脂局を蚭けたものであ぀
お、陀電プロセスを含む特別な方法䟋えば、米
囜特蚱第3041167号参照により朜像圢成するも
のである。しかし、この絶瞁局を有する感光䜓は
特殊な朜像圢成プロセスを甚いなければならず、
少なくずも回の垯電工皋を芁するため、装眮の
耇雑化を招き問題がある。 Many photoreceptors have been put into practical use as photoreceptors used in electrophotography, which includes processes such as charging, exposure, and development (for example, U.S. Patent No.
2297619). For example, by coating or vapor depositing an organic photoconductive material on a suitable conductive substrate,
Directly deposited, or the above materials together with a suitable organic binder, or inorganic photoconductive materials such as ZnO, CdS, TiO 2 dispersed in the binder, or amorphous selenium or its alloys deposited by vapor deposition. photoconductive layers, or those in which two or more of the various photoconductive layers described above are laminated (for example, Japanese Patent Publication No. 45-5394, Japanese Patent Publication No. 46
-3005, Special Publication No. 49-14271). In order to make these photoreceptors compatible with their electrical and optical properties and mechanical properties, or to further improve and stabilize these properties, in some cases, properties in processes such as development are improved. In order to improve this, it has been proposed to provide a surface layer on the surface of the photoreceptor. One of these surface layers is called a protective layer, and for example, a resin thin film is provided on the surface and a latent image is formed by charging and image exposure (Carlson process). However, when a photoreceptor provided with such a protective layer is used, a high residual potential and a significant increase in its cycle are often observed. This high residual potential and increased cycling can cause the protective layer to
A significant improvement can be achieved by reducing the thickness to 1Ό or less, but the film will peel off easily and will not be able to withstand long-term use. Another surface layer is a resin layer with high electrical resistance called an insulating layer, and a latent image is formed by a special method including a static elimination process (for example, see U.S. Pat. No. 3,041,167). It is. However, photoreceptors with this insulating layer require the use of a special latent image formation process.
Since at least two charging steps are required, there is a problem in that the device becomes complicated.

本発明は前者の保護局を蚭けた感光䜓に関する
ものであ぀お、特殊な朜像圢成プロセスを甚いる
こずなく、いわゆるカヌル゜ンプロセスで朜像の
圢成が可胜な感光䜓に関するものである。本出願
人は先に前述の欠点を解消するものずしお、䜎抵
抗保護局の提案を行な぀た特願昭54−42118号、
同54−65671号、同54−65672号及び同54−65673
号参照。しかし、これらの方法では106乃至
1013Ωcmの䜎抵抗保護局を蚭けるこずによ぀お10
〜20Όの保護局ずするこずができ、又高い残留電
䜍及び倧幅なサむクル䞊昇を防止できるものの、
時には感光䜓党䜓の垯電性が䜎䞋し、その結果ず
しお充分なコントラストを持぀画像が埗られなく
なるずいう欠点を有し、特にこの傟向は光導電局
が高感床のものである堎合に顕著であるこずが刀
明した。 The present invention relates to the former type of photoreceptor provided with a protective layer, and more particularly, to a photoreceptor in which a latent image can be formed by a so-called Carlson process without using a special latent image forming process. The present applicant previously proposed a low resistance protective layer as a solution to the above-mentioned drawbacks (Japanese Patent Application No. 54-42118,
No. 54-65671, No. 54-65672 and No. 54-65673
(see issue). However, with these methods, 10 6 to
10 by providing a low resistance protective layer of 13 Ωcm.
Although it can be made into a ~20Ό protective layer and prevents high residual potential and significant cycle increase,
Sometimes, the chargeability of the entire photoreceptor decreases, resulting in the disadvantage that images with sufficient contrast cannot be obtained, and this tendency is particularly noticeable when the photoconductive layer is of high sensitivity. There was found.

本発明の目的はこの様な欠点を確実に陀去する
こずのできる電子写真甚感光䜓を提䟛する事にあ
る。 An object of the present invention is to provide an electrophotographic photoreceptor that can reliably eliminate these drawbacks.

本発明の目的は導電性支持䜓に、光導電局、有
機金属化合物䜆し、有機チタン化合物及び有機
ゞルコニりム化合物を陀くを䞻成分ずしお含有
する䞭間局、及び䜎抵抗保護局を順次積局しおな
る電子写真甚感光䜓により達成するこずができ
る。 The object of the present invention is to sequentially laminate a photoconductive layer, an intermediate layer containing an organic metal compound (excluding organic titanium compounds and organic zirconium compounds) as a main component, and a low-resistance protective layer on a conductive support. This can be achieved using an electrophotographic photoreceptor.

本発明の電子写真甚感光䜓の構成を添付図面に
瀺す。図䞭、は適圓な有機化合物を添加した有
機高分子化合物からなる䜎抵抗透明保護局、は
有機金属化合物含有䞭間局、は光導電局、は
導電性支持䜓である。 The structure of the electrophotographic photoreceptor of the present invention is shown in the accompanying drawings. In the figure, 1 is a low-resistance transparent protective layer made of an organic polymer compound added with a suitable organic compound, 2 is an intermediate layer containing an organometallic compound, 3 is a photoconductive layer, and 4 is a conductive support.

の䞭間局は、少なくずも䞊局の保護局の塗垃
に甚いる溶剀に浞されるものであ぀おはならな
い。この䞭間局はバリダヌ局ずしおの圹割の他に
光導電䜓ず保護局ずの接着局ずしおの機胜を持た
せるこずもできる。この䞭間局に適した有機金
属化合物ずしおは、アルミニりムトリス−アセ
チルアセトネヌト、鉄トリス−アセチルアセト
ネヌト、コバルトビス−アセチルアセトネヌ
ト、鋌ビス−アセチルアセトネヌト、マグネ
シりム−ビスアセチルアセトネヌト、マンガ
ンビス−アセチルアセトネヌト、ニツケ
ル−ビスアセチルアセトネヌト、パナゞ
りムトリス−アセチルアセトネヌト、亜鉛ビス
−アセチルアセトネヌト、スズビス−アセチ
ルアセトネヌト等の金属アセチルアセトネヌト
化合物、アルミニりムむ゜プロピレヌト、モノ
sec−ブトキシアルミニりムゞむ゜プロピレヌト、
アルミニりムsec−ブチレヌト、バナゞりム゚チ
レヌト、バナゞヌル−プロピレヌト、バナゞり
ムむ゜ブチレヌト等の金属アルコラヌト化合物、
及びアルミニりム−ゞ−−ブトキサむド−モノ
−゚チルアセトアセテヌト、アルミニりムオキサ
むドオクテヌト、アルミニりムオキサむドステア
レヌト、アルミニりムオキサむドアクリレヌト等
の化合物を挙げるこずができる。これらの化合物
は、単独でも、皮以䞊の混合物ずしおも甚いる
こずができる。曎に、接着性の改善、抵抗倀の制
埡、その他の理由から䞊蚘の有機金属化合物ず他
の有機暹脂化合物ずの混合物ずしお甚いるこずも
できる。 At least the intermediate layer 2 must not be immersed in the solvent used to apply the upper protective layer. In addition to its role as a barrier layer, this intermediate layer can also function as an adhesive layer between the photoconductor and the protective layer. Organometallic compounds suitable for this intermediate layer 2 include aluminum tris(acetylacetonate), iron tris(acetylacetonate), cobalt bis(acetylacetonate), steel bis(acetylacetonate), magnesium -bis(acetylacetonate), manganese()bis(acetylacetonate), nickel()-bis(acetylacetonate), panadium tris-(acetylacetonate), zinc bis(acetylacetonate), tin bis- Metal acetylacetonate compounds such as (acetylacetonate), aluminum isopropylate, mono
sec-butoxyaluminum diisopropylate,
Metal alcoholate compounds such as aluminum sec-butyrate, vanadium ethylate, vanadyl n-propylate, vanadium isobutyrate,
and aluminum di-n-butoxide mono-ethylacetoacetate, aluminum oxide octate, aluminum oxide stearate, aluminum oxide acrylate, and the like. These compounds can be used alone or as a mixture of two or more. Furthermore, it can also be used as a mixture of the above organometallic compounds and other organic resin compounds for improving adhesion, controlling resistance, and for other reasons.

䞭間局の膜厚は任意に蚭定されるが、10Ό
以䞋、特に1Ό以䞋が奜適である。 The thickness of the intermediate layer 2 can be set arbitrarily, but it is 10 ÎŒm.
Below, 1 ÎŒm or less is particularly suitable.

この䞭間局の圢成は、スプレヌ塗垃、浞挬塗
垃、ナむフ塗垃、ロヌル塗垃等の適宜の方法で塗
垃するこずによ぀お行うこずができる。 This intermediate layer can be formed by coating by an appropriate method such as spray coating, dip coating, knife coating, roll coating, or the like.

本発明の感光䜓の光導電局ずしおはSe、Se−
Te合金、Se−As合金、あるいはこれらを適圓に
組合せた倚局型の真空蒞着膜やポリビニルカルバ
ゟヌル−トリニトロ−−フルオレ
ノンPVKTNF等の有機光導電䜓、ZnOや
CdS等の無機光導電䜓をバむンダヌ䞭に分散した
もの、あるいは電荷発生局ず電荷茞送局を積局し
たもの等を䜿甚するこずができる。 The photoconductive layer of the photoreceptor of the present invention includes Se, Se-
Te alloy, Se-As alloy, or a multilayer vacuum-deposited film made of an appropriate combination of these, organic photoconductors such as polyvinylcarbazole/2,4,7-trinitro-9-fluorenone (PVK/TNF), ZnO, etc.
A material in which an inorganic photoconductor such as CdS is dispersed in a binder, or a material in which a charge generation layer and a charge transport layer are laminated can be used.

たた、保護局ずしおは有機高分子化合物に適圓
な有機化合物あるいは無機化合物を添加したもの
が䞀般に䜿甚でき、䟋えば有機高分子化合物に電
子䟛䞎性化合物あるいは電子䟛䞎性化合物ず電子
受容性化合物を添加した電子䌝導性材料を甚いた
堎合、あるいは有機高分子に粒埄0.3Ό以䞋の金
属酞化物を分散した、電子䌝導性材料を甚いた堎
合に著しい効果が埗られる。具䜓的に蚀えば、こ
のような保護局に甚いられる材料ずしお、メタロ
セン及びその分子構造䞭に少なくずも以䞊のメ
タロセン骚栌を有する化合物テトラゟヌル及び
その分子構造䞭に少なくずも個以䞊のテトラゟ
ヌル骚栌を有する化合物平均粒埄が0.3Ό以䞋の
金、銀、アルミニりム、鉄、銅、ニツケル等の金
属粉及び酞化亜鉛、酞化チタン、酞化錫、酞化ビ
スマス、酞化むンゞりム、酞化アンチモン等の金
属酞化物の粉末酞化錫ず酞化アンチモンを単䞀
粒子䞭に含有する粉末等が挙げられる。 In addition, as a protective layer, a material prepared by adding an appropriate organic compound or an inorganic compound to an organic polymer compound can generally be used. A remarkable effect can be obtained when an electron conductive material is used, or when an electron conductive material in which a metal oxide with a particle size of 0.3 ÎŒm or less is dispersed in an organic polymer is used. Specifically, materials used for such a protective layer include metallocene and compounds having at least one metallocene skeleton in its molecular structure; tetrazole and compounds having at least one tetrazole skeleton in its molecular structure. Compounds: Metal powders such as gold, silver, aluminum, iron, copper, and nickel with an average particle size of 0.3ÎŒ or less, and powders of metal oxides such as zinc oxide, titanium oxide, tin oxide, bismuth oxide, indium oxide, and antimony oxide. ; Examples include powder containing tin oxide and antimony oxide in a single particle.

䜎抵抗保護局ずしおは、106乃至1013Ωcmの抵抗
を有するものを甚いるこずができる。 As the low resistance protective layer, one having a resistance of 10 6 to 10 13 Ωcm can be used.

次に比范䟋及び実斜䟋をあげお本発明の電子写
真感光䜓を説明する。 Next, the electrophotographic photoreceptor of the present invention will be explained with reference to comparative examples and examples.

比范䟋  ポリカヌボネヌト80重量郚ずゞメチルプロセ
ン20重量郚をゞクロルメタンに溶解させこの溶液
をAl基板䞊に蚭けたAs2Se3蒞着膜55Ό厚䞊に
塗垃、也燥し、10Όの保護局を有する感光䜓を埗
た。䞊蚘の保護局を塗垃する前のAs2Se3蒞着膜
を正垯電させ、初期電䜍を800Vにし、これを
460nの波長の光で露光する操䜜を毎分40回の
速床でくり返した。この時残留電䜍は0Vで安定
しおいた。䞀方保護局を蚭けたAs2Se3蒞着膜を
前蚘の条件で垯電露光したずころ初期電䜍200V
であり残留電䜍は100Vで安定しおいた。Comparative Example 1 80 parts by weight of polycarbonate and 20 parts by weight of dimethylferrocene were dissolved in dichloromethane, and this solution was applied onto an As 2 Se 3 vapor-deposited film (55 ÎŒm thick) provided on an Al substrate, dried, and a 10 ÎŒm protective layer was formed. A photoreceptor having the following was obtained. The As 2 Se 3 vapor deposited film before applying the above protective layer was positively charged to an initial potential of 800 V.
The operation of exposing to light with a wavelength of 460 nm was repeated at a rate of 40 times per minute. At this time, the residual potential was stable at 0V. On the other hand, when the As 2 Se 3 vapor-deposited film with the protective layer was charged and exposed under the above conditions, the initial potential was 200 V.
The residual potential was stable at 100V.

したが぀お保護局を有するAs2Se3感光䜓は、
保護局を持たない感光䜓に范べお著しく静電コン
トラストが小さか぀た。 Therefore, an As 2 Se 3 photoreceptor with a protective layer is
The electrostatic contrast was significantly smaller than that of a photoreceptor without a protective layer.

実斜䟋  比范䟋ず同様にしおAl基板䞊にAs2Se3蒞着膜
を圢成した。次にその䞊に゚チルアセトアセテヌ
トアルミニりムゞむ゜プロピレヌト商品名
ALCH、川研フアむンケミカル株匏䌚瀟補
重量郚ずむ゜プロピルアルコヌル10重量郚ずから
なる暹脂液を浞挬塗垃し、50℃にお時間也燥し
お0.5Ό厚の䞭間局を蚭けた。次いでこの䞊に比范
䟋ず同じ保護局を10Ό厚に蚭けた。この感光䜓を
比范䟋ず同じ方法にお垯電露光を繰り返したず
ころ、初期電䜍は910V、残留電䜍は105Vであ぀
た。埓぀お静電コントラストは805Vであり、保
護局のみの感光䜓に比べ、その特性を著しく改善
し、保護局を持たない感光䜓ず等しい倀であ぀
た。Example 1 An As 2 Se 3 vapor deposited film was formed on an Al substrate in the same manner as in the comparative example. Next, apply ethyl acetoacetate aluminum diisopropylate (trade name) on top of it.
ALCH, manufactured by Kawaken Huain Chemical Co., Ltd.) 1
A resin solution consisting of 1 part by weight and 10 parts by weight of isopropyl alcohol was applied by dip coating and dried at 50°C for 2 hours to form an intermediate layer with a thickness of 0.5 Όm. Next, the same protective layer as in the comparative example was provided thereon to a thickness of 10 Όm. When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 1, the initial potential was 910V and the residual potential was 105V. Therefore, the electrostatic contrast was 805V, which was a significantly improved characteristic compared to a photoreceptor with only a protective layer, and was equal to the value of a photoreceptor without a protective layer.

実斜䟋  比范䟋ず同じ方法でAl基板䞊にAs2Se3蒞着
膜を圢成させた。次にその䞊に、亜鉛ビス−ア
セチルアセトネヌト重量郚、シランカツプリ
ング剀商品名、KBM503、信越化孊工業株匏
䌚瀟補重量郚及び−ブチルアルコヌル20重
量郚からなる暹脂液をスプレヌ塗垃し、100℃で
30分間也燥し、0.5Ό厚の䞭間局を蚭けた。次いで
この䞊に比范䟋ず同じ保護局を10Ό厚に蚭け
た。この感光䜓を比范䟋ず同じ方法にお垯電露
光を繰り返したずころ、初期電䜍900V、残留電
䜍105Vであ぀た。埓぀おこの感光䜓の静電コン
トラストは795Vであり保護局を持たない感光䜓
ず同等の倀であ぀た。Example 2 An As 2 Se 3 vapor deposited film was formed on an Al substrate in the same manner as in Comparative Example 1. Next, on top of that, a resin solution consisting of 2 parts by weight of zinc bis(acetylacetonate), 1 part by weight of a silane coupling agent (trade name, KBM503, manufactured by Shin-Etsu Chemical Co., Ltd.) and 20 parts by weight of n-butyl alcohol. Spray and heat at 100℃.
Dry for 30 minutes to provide a 0.5Ό thick intermediate layer. Next, the same protective layer as in Comparative Example 1 was provided thereon to a thickness of 10 Όm. When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 1, the initial potential was 900V and the residual potential was 105V. Therefore, the electrostatic contrast of this photoreceptor was 795V, which was a value equivalent to that of a photoreceptor without a protective layer.

実斜䟋  比范䟋ず同様にしおAl基板䞊にAs2Se3蒞着
膜を圢成させた。次にその䞊にコバルトア
セチルアセトネヌト重量郚ず−ブチルアルコ
ヌル10重量郚ずからなる溶液をスプレヌ塗垃し、
50℃にお時間也燥しお0.3Ό厚の䞭間局を蚭け
た。次いでこの䞊に比范䟋ず同じ保護局を10ÎŒ
厚に蚭けた。Example 3 As in Comparative Example 1, an As 2 Se 3 vapor deposited film was formed on an Al substrate. Next, a solution consisting of 1 part by weight of cobalt () acetylacetonate and 10 parts by weight of n-butyl alcohol is spray applied thereon.
It was dried at 50° C. for 2 hours to form an intermediate layer with a thickness of 0.3 Όm. Next, 10Ό of the same protective layer as in Comparative Example 1 was applied on top of this.
Made thick.

この感光䜓を比范䟋ず同じ方法にお垯電露光
を繰り返したずころ初期電䜍910V、残留電䜍
100Vであ぀た。埓぀おこの感光䜓の静電コント
ラストは810Vであり、保護局を持たない感光䜓
の静電コントラストを曎に改善した。 When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 1, the initial potential was 910V, and the residual potential was
It was 100V. Therefore, the electrostatic contrast of this photoreceptor was 810V, which further improved the electrostatic contrast of a photoreceptor without a protective layer.

比范䟋  ポリアリレヌト暹脂商品名、ポリマヌ、ナ
ニチカ補80重量郚ずプロセン20重量郚をゞク
ロルメタンに溶解した。この溶液を長さ300mmの
Al円筒䞊に蚭けたSe50Ό厚蒞着膜及びSe−Te
合金蒞着膜1Ό厚よりなる二局型の光導電䜓
の䞊に塗垃也燥し、15Όの保護局を有する感光䜓
を埗た。この感光䜓を比范䟋ず保じ方法で垯電
露光を繰返したずころ初期電䜍は400Vで、残留
電䜍は90Vで安定しおいた。Comparative Example 2 80 parts by weight of polyarylate resin (trade name, U Polymer, manufactured by Unitika) and 20 parts by weight of ferrocene were dissolved in dichloromethane. Apply this solution to a length of 300 mm.
Se (50Ό thick) vapor deposited film and Se-Te on Al cylinder
It was coated on a two-layer photoconductor made of a vapor-deposited alloy film (1 ÎŒm thick) and dried to obtain a photoreceptor having a 15 ÎŒm thick protective layer. When this photoreceptor was charged and exposed repeatedly in the same manner as in Comparative Example 1, the initial potential was 400V and the residual potential was stable at 90V.

䞀方、䞊蚘ず同じSeSe−Te二局蒞着膜から
なる感光䜓を保護局を塗垃せずにそのたた䞊蚘の
条件で垯電露光したずころ初期電䜍は900V、残
留電䜍は10Vであ぀た。埓぀お保護局を有する
SeSe−Te二局感光䜓は保護局を持たない感光
䜓に范べお静電コントラストが著しく小さか぀
た。 On the other hand, when a photoreceptor made of the same Se/Se-Te double-layer vapor deposited film as above was charged and exposed under the above conditions without coating with a protective layer, the initial potential was 900V and the residual potential was 10V. therefore has a protective layer
The Se/Se-Te two-layer photoreceptor had significantly lower electrostatic contrast than the photoreceptor without a protective layer.

実斜䟋  比范䟋ず同様にしお、Al円筒䞊にSeSe−
Te合金二局蒞着膜からなる感光局を圢成させた。
぀いでその局䞊に、亜鉛ビス−アセチルアセト
ネヌト重量郚ず−ブタノヌル10重量郚から
なる溶液をスプレヌ塗垃し、40℃で時間也燥し
お0.3Ό厚の䞭間局を蚭けた。次いでこの䞊に比范
䟋ず同じ保護局を15Ό厚に蚭けた。この感光䜓
を比范䟋ず同じ方法で垯電露光を繰り返したず
ころ初期電䜍は990V、残留電䜍は100Vであ぀
た。埓぀おこの感光䜓の静電コントラストは
890Vずなり、保護局のない感光䜓ず同じであ぀
た。この感光䜓を甚いお磁気ブラシ珟像法による
コピヌテストを行な぀たずころ、露光パタヌンず
同䞀の極めお詳明な画像が埗られた。Example 4 Se/Se- was deposited on an Al cylinder in the same manner as Comparative Example 2.
A photosensitive layer consisting of a two-layer deposited Te alloy film was formed.
A solution consisting of 1 part by weight of zinc bis(acetylacetonate) and 10 parts by weight of n-butanol was then spray coated onto the layer and dried at 40 DEG C. for 3 hours to form an intermediate layer having a thickness of 0.3 .mu.m. Next, the same protective layer as in Comparative Example 2 was provided thereon to a thickness of 15 ÎŒm. When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 2, the initial potential was 990V and the residual potential was 100V. Therefore, the electrostatic contrast of this photoreceptor is
The voltage was 890V, which was the same as that of a photoreceptor without a protective layer. When a copy test was conducted using this photoreceptor using a magnetic brush development method, an extremely detailed image identical to the exposed pattern was obtained.

比范䟋  比范䟋ず同じSeSe−Te二局蒞着膜よりな
る感光䜓の䞊に、ポリりレタン暹脂関西ペむン
ト瀟補、レタン4000固圢分70重量郚に察し粒埄
0.1Ό以䞋の酞化スズ30重量郚を加えお分散した
暹脂液を塗垃也燥し10Όの保護局ずした。この感
光䜓を比范䟋ず同じ方法にお垯電露光を繰り返
したずころ、初期電䜍150V、残留電䜍85Vであ
り、著しく静電コントラストが少なか぀た。Comparative Example 3 A polyurethane resin (manufactured by Kansai Paint Co., Ltd., Rethane 4000) having a particle size of 70 parts by weight solids was placed on a photoreceptor made of the same Se/Se-Te double-layer vapor deposited film as in Comparative Example 2.
A resin solution containing 30 parts by weight of tin oxide having a particle diameter of 0.1 ÎŒm or less was applied and dried to form a protective layer of 10 ÎŒm. When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 1, the initial potential was 150 V, the residual potential was 85 V, and the electrostatic contrast was significantly low.

実斜䟋  比范䟋ず同様なるSeSe−Te二局感光局の
䞊に゚チルアセテヌトアルミニりムゞむ゜プロピ
レヌト商品名、ALCH、川研フアむンケミカ
ル瀟補重量郚ず−ブタノヌル10重量郚より
なる溶液を浞挬塗垃し、0.5Ό厚の䞭間局を蚭け
た。次いでこの䞊に比范䟋ず同じ保護局を10ÎŒ
厚に蚭けた。この感光䜓を比范䟋ず同じ方法に
お垯電露光を繰り返したずころ、初期電䜍990V、
残留電䜍100Vで安定しおいた。埓぀お静電コン
トラストは890Vずなり、保護局のない感光䜓に
等しか぀た。Example 5 1 part by weight of ethyl acetate aluminum diisopropylate (trade name: ALCH, manufactured by Kawaken Fine Chemical Co., Ltd.) and 10 parts by weight of n-butanol were placed on the same Se/Se-Te double-layer photosensitive layer as in Comparative Example 2. A 0.5 ÎŒm thick intermediate layer was provided by dip coating a solution consisting of 1.5 ÎŒm. Next, 10 ÎŒm of the same protective layer as in Comparative Example 3 was applied on top of this.
Made thick. When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 1, the initial potential was 990V,
The residual potential was stable at 100V. Therefore, the electrostatic contrast was 890V, which was equivalent to a photoreceptor without a protective layer.

この感光䜓を甚いお磁気ブラシ珟像法によるコ
ピヌテストを行な぀たずころ露光パタヌンず同䞀
の極めお鮮明な画像が埗られた。 When a copy test was conducted using this photoreceptor using a magnetic brush development method, an extremely clear image identical to the exposed pattern was obtained.

【図面の簡単な説明】[Brief explanation of drawings]

図面は本発明の電子写真甚感光䜓の構成を瀺
す。 図䞭笊号  䜎抵抗透明保護局  䞭
間局  光導電局  導電性支持䜓。 The drawings show the structure of the electrophotographic photoreceptor of the present invention. Symbols in the figure: 1...Low resistance transparent protective layer; 2...Intermediate layer; 3...Photoconductive layer; 4...Electroconductive support.

Claims (1)

【特蚱請求の範囲】[Claims]  導電性支持䜓䞊に、光導電局、有機金属化合
物䜆し、有機チタン化合物及び有機ゞルコニり
ム化合物を陀くを䞻成分ずしお含有する䞭間
局、及び䜎抵抗保護局を順次積局しおなる電子写
真甚感光䜓。1 Electrophotography formed by sequentially laminating a photoconductive layer, an intermediate layer containing an organic metal compound (excluding organic titanium compounds and organic zirconium compounds) as a main component, and a low-resistance protective layer on a conductive support. Photoreceptor for use.
JP15942081A 1981-07-28 1981-10-08 Electrophotographic receptor Granted JPS5860748A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP15942081A JPS5860748A (en) 1981-10-08 1981-10-08 Electrophotographic receptor
GB08221347A GB2106659B (en) 1981-07-28 1982-07-23 Electrophotographic photosensitive materials
DE3228218A DE3228218C2 (en) 1981-07-28 1982-07-28 Electrophotographic recording materials
US06/402,700 US4444862A (en) 1981-07-28 1982-07-28 Electrophotographic photosensitive materials having layer of organic metal compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15942081A JPS5860748A (en) 1981-10-08 1981-10-08 Electrophotographic receptor

Publications (2)

Publication Number Publication Date
JPS5860748A JPS5860748A (en) 1983-04-11
JPH0353628B2 true JPH0353628B2 (en) 1991-08-15

Family

ID=15693349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15942081A Granted JPS5860748A (en) 1981-07-28 1981-10-08 Electrophotographic receptor

Country Status (1)

Country Link
JP (1) JPS5860748A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0711708B2 (en) * 1985-12-19 1995-02-08 富士れロックス株匏䌚瀟 Electrophotographic photoconductor
JPH0711709B2 (en) * 1985-12-19 1995-02-08 富士れロックス株匏䌚瀟 Electrophotographic photoconductor
JPH0711711B2 (en) * 1985-12-19 1995-02-08 富士れロックス株匏䌚瀟 Electrophotographic photoconductor
JPH0711712B2 (en) * 1985-12-19 1995-02-08 富士れロックス株匏䌚瀟 Electrophotographic photoconductor
JPH0711713B2 (en) * 1985-12-19 1995-02-08 富士れロックス株匏䌚瀟 Electrophotographic photoconductor
JPH0711714B2 (en) * 1985-12-19 1995-02-08 富士れロックス株匏䌚瀟 Electrophotographic photoconductor
JPH0711710B2 (en) * 1985-12-19 1995-02-08 富士れロックス株匏䌚瀟 Electrophotographic photoconductor
JPH0711707B2 (en) * 1985-12-19 1995-02-08 富士れロックス株匏䌚瀟 Electrophotographic photoconductor
JPS63239459A (en) * 1986-11-28 1988-10-05 Ricoh Co Ltd Electrophotographic sensitive body

Also Published As

Publication number Publication date
JPS5860748A (en) 1983-04-11

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