JPH0353628B2 - - Google Patents
Info
- Publication number
- JPH0353628B2 JPH0353628B2 JP15942081A JP15942081A JPH0353628B2 JP H0353628 B2 JPH0353628 B2 JP H0353628B2 JP 15942081 A JP15942081 A JP 15942081A JP 15942081 A JP15942081 A JP 15942081A JP H0353628 B2 JPH0353628 B2 JP H0353628B2
- Authority
- JP
- Japan
- Prior art keywords
- photoreceptor
- protective layer
- layer
- comparative example
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 108091008695 photoreceptors Proteins 0.000 claims description 43
- 239000011241 protective layer Substances 0.000 claims description 38
- 239000010410 layer Substances 0.000 claims description 37
- 150000002736 metal compounds Chemical class 0.000 claims description 2
- 150000003609 titanium compounds Chemical class 0.000 claims description 2
- 150000003755 zirconium compounds Chemical class 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 22
- 239000011669 selenium Substances 0.000 description 15
- 239000010408 film Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 10
- 239000000243 solution Substances 0.000 description 9
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910018110 SeâTe Inorganic materials 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- -1 (acetylacetonate) Chemical class 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000003618 dip coating Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- 150000002902 organometallic compounds Chemical class 0.000 description 3
- PRCNQQRRDGMPKS-UHFFFAOYSA-N pentane-2,4-dione;zinc Chemical compound [Zn].CC(=O)CC(C)=O.CC(=O)CC(C)=O PRCNQQRRDGMPKS-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910001215 Te alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- MQQXUGFEQSCYIA-OAWHIZORSA-M aluminum;(z)-4-ethoxy-4-oxobut-2-en-2-olate;propan-2-olate Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CCOC(=O)\C=C(\C)[O-] MQQXUGFEQSCYIA-OAWHIZORSA-M 0.000 description 2
- 229910000410 antimony oxide Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 150000003536 tetrazoles Chemical class 0.000 description 2
- VHQGURIJMFPBKS-UHFFFAOYSA-N 2,4,7-trinitrofluoren-9-one Chemical compound [O-][N+](=O)C1=CC([N+]([O-])=O)=C2C3=CC=C([N+](=O)[O-])C=C3C(=O)C2=C1 VHQGURIJMFPBKS-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- CONKBQPVFMXDOV-QHCPKHFHSA-N 6-[(5S)-5-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]methyl]-2-oxo-1,3-oxazolidin-3-yl]-3H-1,3-benzoxazol-2-one Chemical group C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C[C@H]1CN(C(O1)=O)C1=CC2=C(NC(O2)=O)C=C1 CONKBQPVFMXDOV-QHCPKHFHSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- KEGSECZZYGRSBS-UHFFFAOYSA-I [V+5].CC(C)C([O-])=O.CC(C)C([O-])=O.CC(C)C([O-])=O.CC(C)C([O-])=O.CC(C)C([O-])=O Chemical compound [V+5].CC(C)C([O-])=O.CC(C)C([O-])=O.CC(C)C([O-])=O.CC(C)C([O-])=O.CC(C)C([O-])=O KEGSECZZYGRSBS-UHFFFAOYSA-I 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 1
- BHGPTGSAHKMFSZ-UHFFFAOYSA-M aluminum;octadecanoate;oxygen(2-) Chemical compound [O-2].[Al+3].CCCCCCCCCCCCCCCCCC([O-])=O BHGPTGSAHKMFSZ-UHFFFAOYSA-M 0.000 description 1
- FAGRBKDTTPTNQS-UHFFFAOYSA-M aluminum;oxygen(2-);prop-2-enoate Chemical compound [O-2].[Al+3].[O-]C(=O)C=C FAGRBKDTTPTNQS-UHFFFAOYSA-M 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- RDASHQZXQNLNMG-UHFFFAOYSA-N butan-2-olate;di(propan-2-yloxy)alumanylium Chemical compound CCC(C)O[Al](OC(C)C)OC(C)C RDASHQZXQNLNMG-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- BZPRATGFHKWAKR-UHFFFAOYSA-N cobalt;pentane-2,4-dione Chemical compound [Co].CC(=O)CC(C)=O.CC(=O)CC(C)=O BZPRATGFHKWAKR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- LZKLAOYSENRNKR-LNTINUHCSA-N iron;(z)-4-oxoniumylidenepent-2-en-2-olate Chemical compound [Fe].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O LZKLAOYSENRNKR-LNTINUHCSA-N 0.000 description 1
- KYMNSBSWJPFUJH-UHFFFAOYSA-N iron;5-methylcyclopenta-1,3-diene;methylcyclopentane Chemical compound [Fe].C[C-]1C=CC=C1.C[C-]1[CH-][CH-][CH-][CH-]1 KYMNSBSWJPFUJH-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- QWDJLDTYWNBUKE-UHFFFAOYSA-L magnesium bicarbonate Chemical compound [Mg+2].OC([O-])=O.OC([O-])=O QWDJLDTYWNBUKE-UHFFFAOYSA-L 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 125000005287 vanadyl group Chemical group 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
- G03G5/142—Inert intermediate layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Description
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ãããã®ã§ãããDETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrophotographic photoreceptor having a protective layer.
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è€éåãæãåé¡ãããã Many photoreceptors have been put into practical use as photoreceptors used in electrophotography, which includes processes such as charging, exposure, and development (for example, U.S. Patent No.
2297619). For example, by coating or vapor depositing an organic photoconductive material on a suitable conductive substrate,
Directly deposited, or the above materials together with a suitable organic binder, or inorganic photoconductive materials such as ZnO, CdS, TiO 2 dispersed in the binder, or amorphous selenium or its alloys deposited by vapor deposition. photoconductive layers, or those in which two or more of the various photoconductive layers described above are laminated (for example, Japanese Patent Publication No. 45-5394, Japanese Patent Publication No. 46
-3005, Special Publication No. 49-14271). In order to make these photoreceptors compatible with their electrical and optical properties and mechanical properties, or to further improve and stabilize these properties, in some cases, properties in processes such as development are improved. In order to improve this, it has been proposed to provide a surface layer on the surface of the photoreceptor. One of these surface layers is called a protective layer, and for example, a resin thin film is provided on the surface and a latent image is formed by charging and image exposure (Carlson process). However, when a photoreceptor provided with such a protective layer is used, a high residual potential and a significant increase in its cycle are often observed. This high residual potential and increased cycling can cause the protective layer to
A significant improvement can be achieved by reducing the thickness to 1Ό or less, but the film will peel off easily and will not be able to withstand long-term use. Another surface layer is a resin layer with high electrical resistance called an insulating layer, and a latent image is formed by a special method including a static elimination process (for example, see U.S. Pat. No. 3,041,167). It is. However, photoreceptors with this insulating layer require the use of a special latent image formation process.
Since at least two charging steps are required, there is a problem in that the device becomes complicated.
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æããã The present invention relates to the former type of photoreceptor provided with a protective layer, and more particularly, to a photoreceptor in which a latent image can be formed by a so-called Carlson process without using a special latent image forming process. The present applicant previously proposed a low resistance protective layer as a solution to the above-mentioned drawbacks (Japanese Patent Application No. 54-42118,
No. 54-65671, No. 54-65672 and No. 54-65673
(see issue). However, with these methods, 10 6 to
10 by providing a low resistance protective layer of 13 Ωcm.
Although it can be made into a ~20Ό protective layer and prevents high residual potential and significant cycle increase,
Sometimes, the chargeability of the entire photoreceptor decreases, resulting in the disadvantage that images with sufficient contrast cannot be obtained, and this tendency is particularly noticeable when the photoconductive layer is of high sensitivity. There was found.
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ãã An object of the present invention is to provide an electrophotographic photoreceptor that can reliably eliminate these drawbacks.
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ãã The object of the present invention is to sequentially laminate a photoconductive layer, an intermediate layer containing an organic metal compound (excluding organic titanium compounds and organic zirconium compounds) as a main component, and a low-resistance protective layer on a conductive support. This can be achieved using an electrophotographic photoreceptor.
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å°é»æ§æ¯æäœã§ããã The structure of the electrophotographic photoreceptor of the present invention is shown in the accompanying drawings. In the figure, 1 is a low-resistance transparent protective layer made of an organic polymer compound added with a suitable organic compound, 2 is an intermediate layer containing an organometallic compound, 3 is a photoconductive layer, and 4 is a conductive support.
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ã§ããã At least the intermediate layer 2 must not be immersed in the solvent used to apply the upper protective layer. In addition to its role as a barrier layer, this intermediate layer can also function as an adhesive layer between the photoconductor and the protective layer. Organometallic compounds suitable for this intermediate layer 2 include aluminum tris(acetylacetonate), iron tris(acetylacetonate), cobalt bis(acetylacetonate), steel bis(acetylacetonate), magnesium -bis(acetylacetonate), manganese()bis(acetylacetonate), nickel()-bis(acetylacetonate), panadium tris-(acetylacetonate), zinc bis(acetylacetonate), tin bis- Metal acetylacetonate compounds such as (acetylacetonate), aluminum isopropylate, mono
sec-butoxyaluminum diisopropylate,
Metal alcoholate compounds such as aluminum sec-butyrate, vanadium ethylate, vanadyl n-propylate, vanadium isobutyrate,
and aluminum di-n-butoxide mono-ethylacetoacetate, aluminum oxide octate, aluminum oxide stearate, aluminum oxide acrylate, and the like. These compounds can be used alone or as a mixture of two or more. Furthermore, it can also be used as a mixture of the above organometallic compounds and other organic resin compounds for improving adhesion, controlling resistance, and for other reasons.
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以äžãç¹ã«1ÎŒïœä»¥äžã奜é©ã§ããã The thickness of the intermediate layer 2 can be set arbitrarily, but it is 10 ÎŒm.
Below, 1 ÎŒm or less is particularly suitable.
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åžããããšã«ãã€ãŠè¡ãããšãã§ããã This intermediate layer can be formed by coating by an appropriate method such as spray coating, dip coating, knife coating, roll coating, or the like.
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ããã®çã䜿çšããããšãã§ããã The photoconductive layer of the photoreceptor of the present invention includes Se, Se-
Te alloy, Se-As alloy, or a multilayer vacuum-deposited film made of an appropriate combination of these, organic photoconductors such as polyvinylcarbazole/2,4,7-trinitro-9-fluorenone (PVK/TNF), ZnO, etc.
A material in which an inorganic photoconductor such as CdS is dispersed in a binder, or a material in which a charge generation layer and a charge transport layer are laminated can be used.
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ç²åäžã«å«æããç²æ«çãæããããã In addition, as a protective layer, a material prepared by adding an appropriate organic compound or an inorganic compound to an organic polymer compound can generally be used. A remarkable effect can be obtained when an electron conductive material is used, or when an electron conductive material in which a metal oxide with a particle size of 0.3 ÎŒm or less is dispersed in an organic polymer is used. Specifically, materials used for such a protective layer include metallocene and compounds having at least one metallocene skeleton in its molecular structure; tetrazole and compounds having at least one tetrazole skeleton in its molecular structure. Compounds: Metal powders such as gold, silver, aluminum, iron, copper, and nickel with an average particle size of 0.3ÎŒ or less, and powders of metal oxides such as zinc oxide, titanium oxide, tin oxide, bismuth oxide, indium oxide, and antimony oxide. ; Examples include powder containing tin oxide and antimony oxide in a single particle.
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ãæãããã®ãçšããããšãã§ããã As the low resistance protective layer, one having a resistance of 10 6 to 10 13 Ωcm can be used.
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äœã説æããã Next, the electrophotographic photoreceptor of the present invention will be explained with reference to comparative examples and examples.
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ã§ããæ®çé»äœã¯100Vã§å®å®ããŠãããComparative Example 1 80 parts by weight of polycarbonate and 20 parts by weight of dimethylferrocene were dissolved in dichloromethane, and this solution was applied onto an As 2 Se 3 vapor-deposited film (55 ÎŒm thick) provided on an Al substrate, dried, and a 10 ÎŒm protective layer was formed. A photoreceptor having the following was obtained. The As 2 Se 3 vapor deposited film before applying the above protective layer was positively charged to an initial potential of 800 V.
The operation of exposing to light with a wavelength of 460 nm was repeated at a rate of 40 times per minute. At this time, the residual potential was stable at 0V. On the other hand, when the As 2 Se 3 vapor-deposited film with the protective layer was charged and exposed under the above conditions, the initial potential was 200 V.
The residual potential was stable at 100V.
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ãã©ã¹ããå°ããã€ãã Therefore, an As 2 Se 3 photoreceptor with a protective layer is
The electrostatic contrast was significantly smaller than that of a photoreceptor without a protective layer.
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ããExample 1 An As 2 Se 3 vapor deposited film was formed on an Al substrate in the same manner as in the comparative example. Next, apply ethyl acetoacetate aluminum diisopropylate (trade name) on top of it.
ALCH, manufactured by Kawaken Huain Chemical Co., Ltd.) 1
A resin solution consisting of 1 part by weight and 10 parts by weight of isopropyl alcohol was applied by dip coating and dried at 50°C for 2 hours to form an intermediate layer with a thickness of 0.5 Όm. Next, the same protective layer as in the comparative example was provided thereon to a thickness of 10 Όm. When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 1, the initial potential was 910V and the residual potential was 105V. Therefore, the electrostatic contrast was 805V, which was a significantly improved characteristic compared to a photoreceptor with only a protective layer, and was equal to the value of a photoreceptor without a protective layer.
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ãšåçã®å€ã§ãã€ããExample 2 An As 2 Se 3 vapor deposited film was formed on an Al substrate in the same manner as in Comparative Example 1. Next, on top of that, a resin solution consisting of 2 parts by weight of zinc bis(acetylacetonate), 1 part by weight of a silane coupling agent (trade name, KBM503, manufactured by Shin-Etsu Chemical Co., Ltd.) and 20 parts by weight of n-butyl alcohol. Spray and heat at 100â.
Dry for 30 minutes to provide a 0.5Ό thick intermediate layer. Next, the same protective layer as in Comparative Example 1 was provided thereon to a thickness of 10 Όm. When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 1, the initial potential was 900V and the residual potential was 105V. Therefore, the electrostatic contrast of this photoreceptor was 795V, which was a value equivalent to that of a photoreceptor without a protective layer.
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åã«èšãããExample 3 As in Comparative Example 1, an As 2 Se 3 vapor deposited film was formed on an Al substrate. Next, a solution consisting of 1 part by weight of cobalt () acetylacetonate and 10 parts by weight of n-butyl alcohol is spray applied thereon.
It was dried at 50° C. for 2 hours to form an intermediate layer with a thickness of 0.3 Όm. Next, 10Ό of the same protective layer as in Comparative Example 1 was applied on top of this.
Made thick.
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ã®éé»ã³ã³ãã©ã¹ããæŽã«æ¹åããã When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 1, the initial potential was 910V, and the residual potential was
It was 100V. Therefore, the electrostatic contrast of this photoreceptor was 810V, which further improved the electrostatic contrast of a photoreceptor without a protective layer.
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é»äœã¯90Vã§å®å®ããŠãããComparative Example 2 80 parts by weight of polyarylate resin (trade name, U Polymer, manufactured by Unitika) and 20 parts by weight of ferrocene were dissolved in dichloromethane. Apply this solution to a length of 300 mm.
Se (50Ό thick) vapor deposited film and Se-Te on Al cylinder
It was coated on a two-layer photoconductor made of a vapor-deposited alloy film (1 ÎŒm thick) and dried to obtain a photoreceptor having a 15 ÎŒm thick protective layer. When this photoreceptor was charged and exposed repeatedly in the same manner as in Comparative Example 1, the initial potential was 400V and the residual potential was stable at 90V.
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ãã On the other hand, when a photoreceptor made of the same Se/Se-Te double-layer vapor deposited film as above was charged and exposed under the above conditions without coating with a protective layer, the initial potential was 900V and the residual potential was 10V. therefore has a protective layer
The Se/Se-Te two-layer photoreceptor had significantly lower electrostatic contrast than the photoreceptor without a protective layer.
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åäžã®æ¥µããŠè©³æãªç»åãåŸããããExample 4 Se/Se- was deposited on an Al cylinder in the same manner as Comparative Example 2.
A photosensitive layer consisting of a two-layer deposited Te alloy film was formed.
A solution consisting of 1 part by weight of zinc bis(acetylacetonate) and 10 parts by weight of n-butanol was then spray coated onto the layer and dried at 40 DEG C. for 3 hours to form an intermediate layer having a thickness of 0.3 .mu.m. Next, the same protective layer as in Comparative Example 2 was provided thereon to a thickness of 15 ÎŒm. When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 2, the initial potential was 990V and the residual potential was 100V. Therefore, the electrostatic contrast of this photoreceptor is
The voltage was 890V, which was the same as that of a photoreceptor without a protective layer. When a copy test was conducted using this photoreceptor using a magnetic brush development method, an extremely detailed image identical to the exposed pattern was obtained.
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ããèããéé»ã³ã³ãã©ã¹ããå°ãªãã€ããComparative Example 3 A polyurethane resin (manufactured by Kansai Paint Co., Ltd., Rethane 4000) having a particle size of 70 parts by weight solids was placed on a photoreceptor made of the same Se/Se-Te double-layer vapor deposited film as in Comparative Example 2.
A resin solution containing 30 parts by weight of tin oxide having a particle diameter of 0.1 ÎŒm or less was applied and dried to form a protective layer of 10 ÎŒm. When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 1, the initial potential was 150 V, the residual potential was 85 V, and the electrostatic contrast was significantly low.
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äžã«ãšãã«ã¢ã»ããŒãã¢ã«ãããŠã ãžã€ãœããã
ã¬ãŒãïŒåååãALCHãå·ç ãã¢ã€ã³ã±ãã«
ã«ç€Ÿè£œïŒïŒéééšãšïœâãã¿ããŒã«10éééšãã
ãªã溶液ã浞挬å¡åžãã0.5ÎŒåã®äžéå±€ãèšã
ãã次ãã§ãã®äžã«æ¯èŒäŸïŒãšåãä¿è·å±€ã10ÎŒ
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ãç¹°ãè¿ãããšãããåæé»äœ990Vã
æ®çé»äœ100Vã§å®å®ããŠãããåŸã€ãŠéé»ã³ã³
ãã©ã¹ãã¯890Vãšãªããä¿è·å±€ã®ãªãæå
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çããã€ããExample 5 1 part by weight of ethyl acetate aluminum diisopropylate (trade name: ALCH, manufactured by Kawaken Fine Chemical Co., Ltd.) and 10 parts by weight of n-butanol were placed on the same Se/Se-Te double-layer photosensitive layer as in Comparative Example 2. A 0.5 ÎŒm thick intermediate layer was provided by dip coating a solution consisting of 1.5 ÎŒm. Next, 10 ÎŒm of the same protective layer as in Comparative Example 3 was applied on top of this.
Made thick. When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 1, the initial potential was 990V,
The residual potential was stable at 100V. Therefore, the electrostatic contrast was 890V, which was equivalent to a photoreceptor without a protective layer.
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ã®æ¥µããŠé®®æãªç»åãåŸãããã When a copy test was conducted using this photoreceptor using a magnetic brush development method, an extremely clear image identical to the exposed pattern was obtained.
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The drawings show the structure of the electrophotographic photoreceptor of the present invention. Symbols in the figure: 1...Low resistance transparent protective layer; 2...Intermediate layer; 3...Photoconductive layer; 4...Electroconductive support.
Claims (1)
ç©ïŒäœããææ©ãã¿ã³ååç©åã³ææ©ãžã«ã³ããŠ
ã ååç©ãé€ãïŒãäž»æåãšããŠå«æããäžé
å±€ãåã³äœæµæä¿è·å±€ãé 次ç©å±€ããŠãªãé»åå
ççšæå äœã1 Electrophotography formed by sequentially laminating a photoconductive layer, an intermediate layer containing an organic metal compound (excluding organic titanium compounds and organic zirconium compounds) as a main component, and a low-resistance protective layer on a conductive support. Photoreceptor for use.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15942081A JPS5860748A (en) | 1981-10-08 | 1981-10-08 | Electrophotographic receptor |
GB08221347A GB2106659B (en) | 1981-07-28 | 1982-07-23 | Electrophotographic photosensitive materials |
DE3228218A DE3228218C2 (en) | 1981-07-28 | 1982-07-28 | Electrophotographic recording materials |
US06/402,700 US4444862A (en) | 1981-07-28 | 1982-07-28 | Electrophotographic photosensitive materials having layer of organic metal compound |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15942081A JPS5860748A (en) | 1981-10-08 | 1981-10-08 | Electrophotographic receptor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5860748A JPS5860748A (en) | 1983-04-11 |
JPH0353628B2 true JPH0353628B2 (en) | 1991-08-15 |
Family
ID=15693349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15942081A Granted JPS5860748A (en) | 1981-07-28 | 1981-10-08 | Electrophotographic receptor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5860748A (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0711708B2 (en) * | 1985-12-19 | 1995-02-08 | å¯å£«ãŒããã¯ã¹æ ªåŒäŒç€Ÿ | Electrophotographic photoconductor |
JPH0711709B2 (en) * | 1985-12-19 | 1995-02-08 | å¯å£«ãŒããã¯ã¹æ ªåŒäŒç€Ÿ | Electrophotographic photoconductor |
JPH0711711B2 (en) * | 1985-12-19 | 1995-02-08 | å¯å£«ãŒããã¯ã¹æ ªåŒäŒç€Ÿ | Electrophotographic photoconductor |
JPH0711712B2 (en) * | 1985-12-19 | 1995-02-08 | å¯å£«ãŒããã¯ã¹æ ªåŒäŒç€Ÿ | Electrophotographic photoconductor |
JPH0711713B2 (en) * | 1985-12-19 | 1995-02-08 | å¯å£«ãŒããã¯ã¹æ ªåŒäŒç€Ÿ | Electrophotographic photoconductor |
JPH0711714B2 (en) * | 1985-12-19 | 1995-02-08 | å¯å£«ãŒããã¯ã¹æ ªåŒäŒç€Ÿ | Electrophotographic photoconductor |
JPH0711710B2 (en) * | 1985-12-19 | 1995-02-08 | å¯å£«ãŒããã¯ã¹æ ªåŒäŒç€Ÿ | Electrophotographic photoconductor |
JPH0711707B2 (en) * | 1985-12-19 | 1995-02-08 | å¯å£«ãŒããã¯ã¹æ ªåŒäŒç€Ÿ | Electrophotographic photoconductor |
JPS63239459A (en) * | 1986-11-28 | 1988-10-05 | Ricoh Co Ltd | Electrophotographic sensitive body |
-
1981
- 1981-10-08 JP JP15942081A patent/JPS5860748A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5860748A (en) | 1983-04-11 |
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