JPH0353408A - Dielectric porcelain composite - Google Patents
Dielectric porcelain compositeInfo
- Publication number
- JPH0353408A JPH0353408A JP1187893A JP18789389A JPH0353408A JP H0353408 A JPH0353408 A JP H0353408A JP 1187893 A JP1187893 A JP 1187893A JP 18789389 A JP18789389 A JP 18789389A JP H0353408 A JPH0353408 A JP H0353408A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- temperature coefficient
- breakdown voltage
- insulation resistance
- dielectric constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 9
- 239000002131 composite material Substances 0.000 title abstract description 4
- 239000000203 mixture Substances 0.000 claims description 18
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 11
- 230000015556 catabolic process Effects 0.000 abstract description 10
- 238000009413 insulation Methods 0.000 abstract description 10
- 238000010304 firing Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000006467 substitution reaction Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 description 2
- -1 ZrC)3 Chemical class 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(II) oxide Inorganic materials [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000004552 water soluble powder Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は誘電率，絶縁抵抗及び絶縁破壊電圧が高く、良
好度Ｑにすぐれ、温度係数が小さく、かつ焼成温度変動
の影響を受け難い誘電体磁器組成物に関するものである
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to dielectric porcelain that has a high dielectric constant, insulation resistance, and breakdown voltage, has an excellent quality Q, has a small temperature coefficient, and is not easily affected by firing temperature fluctuations. The present invention relates to a composition.
従来の技術
従来から誘電体磁器組成物として下記のような系が知ら
れている。BACKGROUND OF THE INVENTION The following systems have been known as dielectric ceramic compositions.
・Ｌａｚ０３ ２ＴｉＯ２ ＣａＴｉＯ：＋ ２Ｍｇ
Ｏ−ＴｉＯ２系
・ＴｉＯｚ Ｂ ａＴｉＯ：＋ Ｂｉ２０．＋
Ｌ ａｚｏ：＋系・ＢａＴｉＯ３系
・ＳｒＴｉＯ３系
・ＣａＴｊＯ：＋系
・Ｍ ｇ Ｔ ｉ ０ ３系
− Ｓ ｒＴ ｉｏ３−ＣａＴ ｉｏ：＋系・Ｓ ｒＴ
ｉｏ３ ＣａＴ ｉｏ．＋ Ｎｂ２０ｓ系発明が解
決しようとする課題
しかし、これらの一つの組底物が高い誘電率、小さい温
度係数、すぐれた良好度Ｑ及び焼成温度変動の影響を受
け難いなどの全てを満足することは不可能である。・Laz03 2TiO2 CaTiO: + 2Mg
O-TiO2 system・TiOz B aTiO:+ Bi20. +
L azo: + system / BaTiO3 system / SrTiO3 system / CaTjO: + system / M g Ti 0 3 system - S rT io3 - CaT io: + system / S rT
io3 CaT io. + Problems to be solved by the Nb20s-based invention However, it is impossible for a single composite bottom to satisfy all of these requirements, such as high dielectric constant, small temperature coefficient, excellent quality Q, and low sensitivity to firing temperature fluctuations. It's impossible.
さらに、Ｂｉ２０：＋を含んでいるものは、積層セラミ
ックコンデンサの内部電極として、Ｐｄを用いることが
できないという課題があった。Furthermore, there is a problem that Pd cannot be used as an internal electrode of a multilayer ceramic capacitor containing Bi20:+.
本発明は誘電率，絶縁抵抗及び絶縁破壊電圧が高く、良
好度Ｑにすぐれ、温度係数が小さく、かつ焼成温度変動
の影響を受け難い誘電体磁器を得ることを目的とするも
のである。The object of the present invention is to obtain dielectric porcelain that has high dielectric constant, insulation resistance, and dielectric breakdown voltage, excellent quality Q, small temperature coefficient, and is not easily affected by firing temperature fluctuations.
課題を解決するための手段
この課題を解決するために本発明は、一般式ｘＳｒＯ−
ｙＣａＯ−ｚ［（ＴｉＯ２）＋＋−，，，＋｛Ｚｒ０２
｝ｍ］と表わした時、（ただし、ｘ＋ｙ＋ｚ＝１．００
、０．０１≦ｍ≦０． ２ ０）、ｘ，ｙ，ｚが以下に
示す各点ａ，ｂ，ｃ，ｄ，で囲まれるモル比の範囲を主
成分とする組成物に対し、副成分としてＶ ２ ０ ５
０、１〜５、０重量％を含有することを特徴とする誘電
体磁器組成物を提案するものである。Means for Solving the Problem In order to solve this problem, the present invention provides the general formula xSrO-
yCaO-z[(TiO2)++-,,,+{Zr02
}m], (where x+y+z=1.00
, 0.01≦m≦0. 2 0), x, y, z are in the molar ratio range surrounded by each point a, b, c, d shown below as a main component, V 2 0 5 as a subcomponent
The present invention proposes a dielectric ceramic composition characterized by containing 0.1 to 5.0% by weight.
第１図は本発明にかかる組成物の主成分の組成範囲を示
す三元図であり、主成分の組成範囲を限定した理由を図
を参照しながら説明する。すなわち、Ａ領域とＣ領域で
は温度係数がー（マイナス）側に大きくなり過ぎて、実
用的でなくなる。FIG. 1 is a ternary diagram showing the composition range of the main components of the composition according to the present invention, and the reason for limiting the composition range of the main components will be explained with reference to the figure. That is, in the A region and the C region, the temperature coefficient becomes too large on the - (minus) side, making it impractical.
また、Ｂ領域とＤ領域では焼結困難となり、誘電率，良
好度Ｑ，絶縁抵抗が低下する。Further, in the B region and the D region, sintering becomes difficult, and the dielectric constant, quality Q, and insulation resistance decrease.
第２図と第３図は主成分中のＴ ｉ Ｏ ２の一部分を
置換するＺｒＯ。の比率ｍの効果を示すグラフであり、
ＺｒＯ２の置換範囲を限定した理由をグラフを参照しな
がら説明する。ここで、Ｔ ｉ Ｏ ２の一部分をＺ
ｒ Ｏ ２で置換することにより、第２図に示すように
絶縁抵抗を増大させ、また第３図に示すように焼成温度
による温度係数変動を小さくする効果を有しているが、
その置換率ｍが０．１未満では置換効果はなく、一方０
．２を超えると焼結困難となり、誘電率，良好度Ｑ，絶
縁抵抗が低下する。FIGS. 2 and 3 show ZrO replacing a portion of T i O 2 in the main component. It is a graph showing the effect of the ratio m of
The reason for limiting the range of ZrO2 substitution will be explained with reference to graphs. Here, a part of T i O 2 is Z
Substitution with rO2 has the effect of increasing the insulation resistance as shown in FIG. 2, and reducing temperature coefficient fluctuations due to firing temperature as shown in FIG. 3.
If the substitution rate m is less than 0.1, there is no substitution effect; on the other hand, 0
．． If it exceeds 2, it becomes difficult to sinter, and the dielectric constant, quality Q, and insulation resistance decrease.
第４図は、主成分に対し、副成分Ｖ２０５含有の効果を
示すグラフであり、Ｖ２０５の含有範囲を限定した理由
をグラフを参照しながら説明する。第４図に示すように
Ｖ２０５を含有することにより、絶縁破壊電圧が増大す
る効果を有しているが、その含有量が主成分に対し０．
１重量％未満では含有効果はなく、一方５．０重量％を
超えると良好度Ｑが低下し、温度係数が−（マイナス）
側に大きくなり実用的でなくなる。FIG. 4 is a graph showing the effect of containing the subcomponent V205 on the main component, and the reason for limiting the content range of V205 will be explained with reference to the graph. As shown in FIG. 4, the inclusion of V205 has the effect of increasing the dielectric breakdown voltage, but its content is 0.5% relative to the main component.
If it is less than 1% by weight, there is no effect of its inclusion, while if it exceeds 5.0% by weight, the goodness factor Q will decrease and the temperature coefficient will be - (minus).
It becomes large on the side and becomes impractical.
本発明はさらに上記主成分と副成分に対し、マンガン，
クロム，鉄，ニッケル，コバルト及ヒケイ素の酸化物か
らなる群の中から選ばれた少なくとも１種類を、それぞ
れＭ ｎ ０２， Ｃ ｒ ２０３，Ｆｅ○，Ｎｉ○
，Ｃｏｏ及びＳｉＯ２に換算して、上記主成分の０．０
５〜１．００重量％添加せしめた構成とすることができ
る。これらの添加物は磁器の焼結性を向上させる効果を
有しているが、その添加量が１．００重量％を超えると
誘電率が低下する。The present invention further provides manganese,
At least one selected from the group consisting of oxides of chromium, iron, nickel, cobalt and arsenic, respectively, as M n 02, Cr 203, Fe○, Ni○
, Coo and SiO2, 0.0 of the above main components
It can be configured such that 5 to 1.00% by weight is added. These additives have the effect of improving the sinterability of porcelain, but if the amount added exceeds 1.00% by weight, the dielectric constant decreases.
作用
本発明の誘電体磁器組成物により、誘電率，絶縁抵抗及
び絶縁破壊電圧が高く、良好度Ｑにすぐれ、温度係数が
小さく、かつ焼戊温度変動の影響を受け難い誘電体磁器
組威物を得ることができる。Effect: The dielectric porcelain composition of the present invention has a high dielectric constant, insulation resistance, and breakdown voltage, has an excellent quality Q, has a small temperature coefficient, and is not easily affected by firing temperature fluctuations. can be obtained.
実施例 以下、本発明を具体的実施例により説明する。Example The present invention will be explained below using specific examples.
（実施例１）
出発原料には化学的に高純度のＳｒＣＯ３ＣａＣＯ３．
ＴｉＯｚ，ＺｒＯｚ及びｖ２０５粉末を下記の第１表に
示す組成になるように秤量し、めのうボールを備えたゴ
ム内張りしたボールミルに純水とともに入れ、２０時間
湿式混合した。次いで、この混合物を脱水乾燥後、１１
００℃で２時間仮焼成した。次に、粗粉砕後、再度、め
のうボールを備えたゴム内張りしたボールミルに純水と
ともに入れ、２０時間湿式粉砕を行った。この粉砕物を
脱水乾燥した後、粉末にバインダーとして濃度５％のポ
リビニルアルコール水溶岐を９重量％添加して均質とし
た後、３２メッシュのふるいを通して整粒した。次に、
この整粒粉体を金型と油圧プレスを用いて成形圧力１ｔ
ｏｎ／ｃ＋１で直径１５ｍｉ，厚み０．４ｍｎ＋に成形
し、成形物をＺｒｏ２粉を敷いた高純度のアルミナ匣鉢
中に入れ、空気中において下記の第１表に示す温度で２
時間焼成し、第１表に示す配合組成の誘電体磁器を得た
。(Example 1) Starting materials include chemically highly purified SrCO3CaCO3.
TiOz, ZrOz and v205 powders were weighed to have the composition shown in Table 1 below, placed in a rubber-lined ball mill equipped with an agate ball together with pure water, and wet mixed for 20 hours. Next, after dehydrating and drying this mixture, 11
Temporary firing was performed at 00°C for 2 hours. Next, after coarse pulverization, the mixture was again put into a rubber-lined ball mill equipped with agate balls together with pure water, and wet pulverized for 20 hours. After dehydrating and drying the pulverized product, 9% by weight of polyvinyl alcohol water-soluble powder with a concentration of 5% was added to the powder as a binder to make it homogeneous, and the powder was sized through a 32-mesh sieve. next,
This sized powder is molded using a mold and a hydraulic press under a pressure of 1t.
on/c+1 to a diameter of 15 mm and thickness of 0.4 mm+, the molded product was placed in a high-purity alumina sagger covered with Zro2 powder, and heated in air at the temperature shown in Table 1 below.
After firing for a time, dielectric porcelain having the composition shown in Table 1 was obtained.
これらの試料の電気特性は、試料の両面に銀電極を焼き
付け、誘電率，良好度Ｑ，温度係数はＹＨＰ社製デジタ
ルＬＣＲメータモデル４２７５Ａを使用し、測定温度２
０℃、測定電圧１． Ｑ Ｖｒｍｓ，測定周波数Ｉ Ｍ
Ｉ｛ｚによる測定で求めた。なお、温度係数は２０℃
における容量値を基準とし、次式により求めた。The electrical properties of these samples were determined by baking silver electrodes on both sides of the samples, and measuring the dielectric constant, goodness factor Q, and temperature coefficient using a digital LCR meter model 4275A manufactured by YHP Corporation, at a measurement temperature of 2.
0°C, measurement voltage 1. Q Vrms, measurement frequency I M
It was determined by measurement using I{z. In addition, the temperature coefficient is 20℃
Based on the capacitance value at , it was calculated using the following formula.
温度係数＝（Ｃｓｓ℃− Ｃ２０℃） ／（Ｃ２ｏｔＸ
６ ５）ｘ １ ０６（ｐｐｍ／℃）
また、絶縁抵抗は横河ヒューレットバソカード社製ＨＲ
メータモデル４３２９Ａを使用し、測定電圧Ｄ．Ｃ．５
０Ｖ，測定時間Ｉ分間による測定で求めた。さらに、絶
縁破壊電圧は菊水電子工業■高電圧電源ＰＨ３３５Ｋ−
３形を使用し、昇圧速度５０Ｖ／ｓｅｃにより求めた絶
縁破壊電圧を素子厚みで除算し、単位長さ当たりの絶縁
破壊電圧値とした。Temperature coefficient = (Css℃ - C20℃) / (C2otX
6 5) x 1 06 (ppm/°C) Insulation resistance is HR manufactured by Yokogawa Hewlett Vasocard Co., Ltd.
Using meter model 4329A, measure voltage D. C. 5
It was determined by measurement at 0V for a measurement time of I minutes. Furthermore, the breakdown voltage is Kikusui Electronics High Voltage Power Supply PH335K-
The dielectric breakdown voltage obtained using Type 3 at a boost rate of 50 V/sec was divided by the element thickness to obtain the dielectric breakdown voltage value per unit length.
試験条件及び結果を第１表に併せて示す。Test conditions and results are also shown in Table 1.
（以 下 余 白）
？実施例２）
出発原料には化学的に高純度のＳｒＣＯ：＋，ＣａＣＯ
：＋，ＴｉＯ■，Ｚ ｒｏ２．Ｎｂ２０ｓ，ＭｎＯ２，
Ｃｒ２Ｏ３，ＦｅＯ，ＮｉＯ，ＣｏＯ及びＳｉｎ：粉末
を下記の第２表に示す組成になるように秤量し、それ以
後は実施例１の場合と同様に処理して第２表に示す配合
組成の誘電体磁器を得た。(Left below) ? Example 2) Starting materials include chemically highly purified SrCO:+, CaCO
:+, TiO■, Z ro2. Nb20s, MnO2,
Cr2O3, FeO, NiO, CoO, and Sin: Powders were weighed to have the composition shown in Table 2 below, and thereafter treated in the same manner as in Example 1 to produce a dielectric with the composition shown in Table 2. Obtained body porcelain.
これらの試料の試験方法は、実施例１と同一であり、試
験条件及び結果を第２表に併せて示す。The test methods for these samples were the same as in Example 1, and the test conditions and results are also shown in Table 2.
（以 下 余 白）
なお、これらの実施例における誘電体磁器組成物の製造
方法では、Ｓ ｒ ０３， Ｃ ａ Ｃ Ｏ：＋，
ＴｉＯ２，Ｚ ｒ０２．Ｖ２０Ｓを使用し、試料を作製
したが、この方法に限定されるものではなく、所望の組
或比になるように、ＳｒＴｉＯ３，ＣａＴｉＯ：＋Ｃａ
ＺｒＣ）３などの化合物を使用して試料を作製しても実
施例と同程度の特性を得ることができる。(Margin below) In addition, in the manufacturing method of the dielectric ceramic composition in these Examples, S r 03, C a CO: +,
TiO2, Z r02. Although the sample was prepared using V20S, it is not limited to this method, and SrTiO3, CaTiO:+Ca
Even if a sample is prepared using a compound such as ZrC)3, characteristics comparable to those of the example can be obtained.
また、実施例２において、ＭｎＯ．Ｃｒ２０：＋，Ｆｅ
ｄ，Ｎｉｐ，Ｃｏｏ及びＳｉＯ２を使用し試料を作製し
たが、この方法に限定されるものではな＜、Ｍｎ （Ｃ
Ｏ３）２．Ｍｎ （ＯＨ）＜ などの炭酸塩，水酸化物
を使用して試料を作製しても実施例と同程度の特性を得
ることができる。In addition, in Example 2, MnO. Cr20:+,Fe
d, Nip, Coo, and SiO2, but the method is not limited to <, Mn (C
O3)2. Even if a sample is prepared using a carbonate or hydroxide such as Mn (OH) < , characteristics comparable to those of the example can be obtained.
発明の効果
以上のように本発明によれば、誘電率．絶縁抵抗及び絶
縁破壊電圧が高く、良好度Ｑにすぐれ、温度係数が小さ
く、かつ焼或温度変動の影響を受け難い誘電体磁器を得
ることができる。Effects of the Invention As described above, according to the present invention, the dielectric constant. It is possible to obtain dielectric porcelain that has high insulation resistance and dielectric breakdown voltage, excellent quality Q, small temperature coefficient, and is not easily affected by firing temperature fluctuations.
マタ、マンガン，クロム，鉄，ニッケル，コバルト及び
ケイ素の酸化物の添加により焼成温度を低下させること
ができる。The firing temperature can be lowered by adding oxides of carbon dioxide, manganese, chromium, iron, nickel, cobalt and silicon.
さらに、得られた誘電体磁器は高誘電率であるため、素
体をきわめて小形にすることができ、回路の微小化に有
効であり、特に薄板状にして積層セラミノクコンデンサ
，ハイブリッド微小回路などの用途に適している。Furthermore, since the obtained dielectric ceramic has a high dielectric constant, the element body can be made extremely small, and it is effective for miniaturizing circuits. suitable for use.
第１図は本発明に係わる主戊分の組成範囲を説明する三
元図、第２図は本発明に係わる副成分として１重量％Ｖ
２０５を含有し、主成分の一般式ｘ ＳｒＯ−ｙＣａＯ
−ｚ［（ＴｉＯ２）（１−ｍ）ｚ−１’（ＺｒＯ２）Ｉ
ＩＩ］と表わした時、ｘ＝０．３０，ｙ＝０．１９，ｚ
＝０ ５１とし、ＺｒＯ２の置換率ｍを０．２５まで変
化させた時の特性の変化を示すグラフ、第３図は本発明
に係わる副成分として１重量％Ｖ ２ ０ ｓを含有し
、主成分の一般式
ｘ ＳｒＯ−ｙＣａＯ−ｚ［（Ｔｉｏ２）＋＋−ｍ＋−
（ＺｒＯ２）ｍ］と表わした時、ｘ＝０．３０．ｙ＝０
．１９，ｚ ＝０．５１とし、ＺｒＯ２の置換率ｍを０
．２５まで変化させ、さらに焼成温度を１３４０〜１３
８０℃まで変化させた時の温度特性の変化を示すグラフ
、第４図は本発明に係わる主成分の一般式ｘ ＳｒＯ
− ｙ ＣａＯ−ｚ ［（ＴｉＯ ２）＋
＋−ｍ＋ ・（ＺｒＯ ２）ｍコと表わした時、ｘ
−０−３０，ｙ＝０．１９，ｚＯ．５１とし、副成分Ｖ
２ ０ ｓの含有量を１５．０重量％まで変化させた
時の特性の変化を示すグラフである。Fig. 1 is a ternary diagram explaining the composition range of the main component related to the present invention, and Fig. 2 is a ternary diagram explaining the composition range of the main component related to the present invention.
205, the general formula of the main component x SrO-yCaO
-z[(TiO2)(1-m)z-1'(ZrO2)I
II], x = 0.30, y = 0.19, z
= 0 51, and the graph showing the change in characteristics when the substitution ratio m of ZrO2 is changed to 0.25. General formula of component x SrO-yCaO-z[(Tio2)++-m+-
(ZrO2)m], x=0.30. y=0
．． 19,z = 0.51, and the substitution rate m of ZrO2 is 0.
．． 25, and then the firing temperature was changed to 1340-13.
A graph showing the change in temperature characteristics when the temperature is changed up to 80°C, FIG. 4 shows the general formula x SrO of the main component related to the present invention.
−yCaO−z [(TiO2)+
+−m+ ・(ZrO 2) When expressed as m, x
-0-30, y=0.19, zO. 51, and the subcomponent V
2 is a graph showing changes in properties when the content of 20s is changed up to 15.0% by weight.
Claims (2)
＿ｍ＿）・（ＺｒＯ＿２）ｍ］と表わした時（ただし、
ｘ＋ｙ＋ｚ＝１．００、０．０１≦ｍ≦０．２０）、ｘ
，ｙ，ｚが以下に表わす各点ａ，ｂ，ｃ，ｄで囲まれる
モル比の範囲を主成分とする組成物に対し、副成分とし
てＶ＿２Ｏ＿５０．１〜５．０重量％を含有することを
特徴とする誘電体磁器組成物。(1) General formula xSrO-yCaO-z[(TiO_2)_(_1_-
＿m＿)・(ZrO_2)m] (however, when expressed as
x+y+z=1.00, 0.01≦m≦0.20), x
, y, z are the main components in the molar ratio range surrounded by the points a, b, c, d shown below, and contain V_2O_50.1 to 5.0% by weight as a subcomponent. A dielectric ceramic composition characterized by:
ケイ素の酸化物からなる群の中から選ばれた少なくとも
１種を、それぞれＭｎＯ＿２，Ｃｒ＿２Ｏ＿３，ＦｅＯ
，ＮｉＯ，ＣｏＯ及びＳｉＯ＿２に換算して、主成分の
０．０５〜１．００重量％添加含有したことを特徴とす
る特許請求の範囲第１項記載の誘電体磁器組成物。(2) At least one selected from the group consisting of oxides of manganese, chromium, iron, nickel, cobalt, and silicon, respectively, is
, NiO, CoO and SiO_2, the dielectric ceramic composition according to claim 1, further contains 0.05 to 1.00% by weight of the main components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1187893A JPH0353408A (en) | 1989-07-20 | 1989-07-20 | Dielectric porcelain composite |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1187893A JPH0353408A (en) | 1989-07-20 | 1989-07-20 | Dielectric porcelain composite |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0353408A true JPH0353408A (en) | 1991-03-07 |
Family
ID=16214040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1187893A Pending JPH0353408A (en) | 1989-07-20 | 1989-07-20 | Dielectric porcelain composite |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0353408A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5350639A (en) * | 1991-09-10 | 1994-09-27 | Matsushita Electric Industrial Co., Ltd. | Dielectric ceramic for use in microwave device, a microwave dielectric ceramic resonator dielectric ceramics |
| EP1125904A1 (en) * | 2000-02-09 | 2001-08-22 | TDK Corporation | Dielectric ceramic composition, electronic device, and method for producing the same |
| US6962888B2 (en) * | 2000-06-29 | 2005-11-08 | Tdk Corporation | Dielectric ceramic composition and electronic device |
-
1989
- 1989-07-20 JP JP1187893A patent/JPH0353408A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5350639A (en) * | 1991-09-10 | 1994-09-27 | Matsushita Electric Industrial Co., Ltd. | Dielectric ceramic for use in microwave device, a microwave dielectric ceramic resonator dielectric ceramics |
| EP1125904A1 (en) * | 2000-02-09 | 2001-08-22 | TDK Corporation | Dielectric ceramic composition, electronic device, and method for producing the same |
| US6627570B2 (en) | 2000-02-09 | 2003-09-30 | Tdk Corporation | Dielectric ceramic composition, electronic device, and method of producing the same |
| US6933256B2 (en) | 2000-02-09 | 2005-08-23 | Tdk Corporation | Dielectric ceramic composition, electronic device, and method for producing same |
| US6962888B2 (en) * | 2000-06-29 | 2005-11-08 | Tdk Corporation | Dielectric ceramic composition and electronic device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH05314817A (en) | Nonreducing dielectric ceramic composition | |
| JPH0353408A (en) | Dielectric porcelain composite | |
| JP3143922B2 (en) | Non-reducing dielectric ceramic composition | |
| JPH0329208A (en) | Dielectric ceramic composition | |
| JP2676778B2 (en) | Dielectric porcelain composition | |
| JP2568567B2 (en) | Dielectric porcelain composition | |
| JPH0353407A (en) | Dielectric porcelain composite | |
| JP2568565B2 (en) | Dielectric porcelain composition | |
| JP2568566B2 (en) | Dielectric porcelain composition | |
| JPS62243207A (en) | Dielectric porcelain compound | |
| JP2615636B2 (en) | Dielectric porcelain composition | |
| JPH03237057A (en) | Porcelain composition for voltage nonlinear resistor | |
| JPS62243208A (en) | Dielectric porcelain compound | |
| JPS62252904A (en) | Porcelain compound for voltage nonlinear resistance unit andmanufacture of the same | |
| JPS63174204A (en) | Dielectric ceramic composition | |
| JPH05205523A (en) | Irreducible dielectric porcelain composition | |
| JPS63193403A (en) | Dielectric ceramic composition | |
| JPS62145603A (en) | Dielectric porcelain compound | |
| JPH0815010B2 (en) | Dielectric porcelain composition | |
| JPH0323261A (en) | Dielectric porcelain composition | |
| JPH04174907A (en) | Dielectric porcelain composition material | |
| JPS61239503A (en) | Dielectric ceramic composition for temperature compensation | |
| JPS63193401A (en) | Dielectric ceramic composition | |
| JPS63174209A (en) | Dielectric ceramic composition | |
| JPH04334809A (en) | Dielectric porcelain composite |