JPH0353068A - Method for plotting film by laser cvd - Google Patents
Method for plotting film by laser cvdInfo
- Publication number
- JPH0353068A JPH0353068A JP18789689A JP18789689A JPH0353068A JP H0353068 A JPH0353068 A JP H0353068A JP 18789689 A JP18789689 A JP 18789689A JP 18789689 A JP18789689 A JP 18789689A JP H0353068 A JPH0353068 A JP H0353068A
- Authority
- JP
- Japan
- Prior art keywords
- film
- base material
- laser beam
- laser
- supplied
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000001182 laser chemical vapour deposition Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000000376 reactant Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 20
- 239000012495 reaction gas Substances 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 abstract description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 abstract description 2
- 239000005297 pyrex Substances 0.000 abstract description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 6
- 239000008246 gaseous mixture Substances 0.000 abstract 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 241000282326 Felis catus Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、各種の気相戒長法で作威可能な種々の膜の、
直接描画を目的とした、レーザＣＶＤによる描画方法に
関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to the production of various films that can be produced by various vapor phase methods.
This invention relates to a drawing method using laser CVD for the purpose of direct drawing.
従来の技術
近年、気相戒長法において、光エネルギーをガスの活性
化手段とする光Ｃ Ｖ Ｄ （ ｃｈｅｍｉｃａｌ ｖ
ａｐｏｒｄｅｐｏｓｉｔｉｏｎ）法が注目を集めている
。光ＣＶＤ法は、従来の熱ＣＶＤ，プラズマＣＶＤに比
較して低温プロセス，ノンダメージプロセスという長所
を持っている。なお、光源としてレーザを用いた場合の
光ＣＶＤ法を特にレーザＣＶＤ法と呼んで区別している
。ランプ光源に比較し、レーザは光エネルギー密度が高
いこと、及び、コヒーレントで指向性のあるビームが得
られるという特徴を持つ為、レーザＣＶＤ法は、極小的
な高速成膜が可能であり、膜の直接描画法としての応用
に大きなメリットを持っている．
発明が解決しようとする！ｉＢ
レーザＣＶＤ法において、集光したビームを基材面に垂
直に照射し局部的な領域に成膜を行う、いわゆる膜の直
接描画を行う場合、成膜域が極めて限定されている為、
底膜に必要な反応ガスの供給も必要箇所のみにノズルを
用いて供給される形式を使用するのが、安全上，経済上
好ましい。しかしながら、従来は、ノズルからの反応ガ
ス流に対し、特にその流れの方向性を規制することがな
されていなかった為、描画の方向により、成膜表面が極
めて粗い、特性の悪い膜がしばしば発生するという問題
があった。Conventional technology In recent years, in the gas phase Kaicho method, optical CVD (chemical v
The apordeposition method is attracting attention. The photo-CVD method has the advantage of being a low-temperature process and a non-damaging process compared to conventional thermal CVD and plasma CVD. Note that the optical CVD method using a laser as a light source is specifically called the laser CVD method to distinguish it. Compared to lamp light sources, lasers have a higher optical energy density and a coherent and directional beam, so the laser CVD method can form extremely small films at high speed. It has great advantages when applied as a direct drawing method. Invention tries to solve! In the iB laser CVD method, when performing so-called direct film writing, in which a focused beam is irradiated perpendicularly to the substrate surface to form a film in a localized area, the film forming area is extremely limited.
From the viewpoint of safety and economy, it is preferable to use a system in which the reaction gas necessary for the bottom membrane is supplied only to the necessary locations using a nozzle. However, in the past, the flow direction of the reactant gas from the nozzle was not particularly regulated, so depending on the drawing direction, a film with poor properties and an extremely rough surface was often formed. There was a problem.
課題を解決するための手段
上記課題を解決する為、本発明のレーザＣＶＤ法は、７
ｉｌ２ｖ．を所望する位置に照射されるレーザビーム、
及び、同位置に反応ガスを極小的に噴出供給するノズル
から構成されるレーザＣＶＤ装置において、膜のｉｆ画
方向と供給ガスの噴出方向が基材に対して常に同方向の
関係を保つ構成を持つものである．
作用
本発明は、上記した構戒によって、常に安定した均一な
組威の膜を描画可能とするレーザＣＶＤによる膜の描画
方法を提供するものである。Means for Solving the Problems In order to solve the above problems, the laser CVD method of the present invention has 7
il2v. a laser beam irradiated to the desired position,
In a laser CVD apparatus composed of a nozzle that ejects and supplies a reaction gas at the same position in a very small amount, the IF image direction of the film and the ejection direction of the supply gas are always kept in the same direction with respect to the base material. It is something you have. Operation The present invention provides a method of drawing a film by laser CVD, which allows drawing of a film with a stable and uniform texture at all times by following the above-mentioned precautions.
実施例
以下、本発明の一実施例について図面を参照しながら説
明する。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図は、本発明の実施例におけるレーザＣＶＤ装置の
反応器内部の断面図を示したものであり、第２図は、同
じ反応部のみをとりだした図である。FIG. 1 shows a cross-sectional view of the inside of a reactor of a laser CVD apparatus according to an embodiment of the present invention, and FIG. 2 is a diagram showing only the same reaction section.
ここでは、特に酸化導電膜の一つであるＳｎ○２膜のレ
ーザＣＶＤ法を例にとる。ｌに示すレーザ光源としては
、Ｃ○２レーザを用いた．レーザビームは、透過窓２を
通して基材であるパイレックスガラス５表面の成膜を所
望する位置に垂直に照射される。一方、成膜に必要な反
応ガスは、ガスノズル４により、レーザビーム照射スポ
ット部に、ガスが衝突する形で噴出される．反応ガス源
としては、テトラメチルスズ及び酸素を用いた。レーザ
の照射された基材スポットは１０μ以下の表面層のみが
、瞬時に加熱され、近接する反応ガスを分解し、レーザ
の照射軌跡に相当するＳｎ○２膜４の描画が行われる。Here, the laser CVD method of a Sn*2 film, which is one of the oxidized conductive films, will be taken as an example. A C○2 laser was used as the laser light source shown in 1. The laser beam is irradiated perpendicularly through the transmission window 2 to a position on the surface of the base material Pyrex glass 5 at which a film is desired to be formed. On the other hand, the reaction gas necessary for film formation is ejected from the gas nozzle 4 in the form of gas colliding with the laser beam irradiation spot. Tetramethyltin and oxygen were used as reaction gas sources. Only the surface layer of the substrate spot irradiated with the laser, which is 10 μm or less, is instantaneously heated, decomposing the nearby reactive gas, and drawing the Sn◯2 film 4 corresponding to the laser irradiation locus.
レーザ出力はＩＷ−１０Ｗ、ビーム径は約１００μ〜ｌ
１ｍ。レーザビーム１およびガスノズル３はいずれも固
定されており、成膜位置の移動、すなわち所望のパター
ンの膜描画は基材５を固定したステージ６の稼働により
達威される．今、ガスの噴出方向をＡで示す方向とし、
これに対するステージの移動方向をガスの噴出方向と逆
のＢの方向、すなわちガスの噴出方向が基材上での膜の
描画進行方向と同一である場合と、ステージの移動方向
がガスの噴出方向Ａと同一方向である。すなわちガスの
噴出方向が基材上での膜の曜両方向と逆向きである場合
の２通りについて、描画した膜を比較した。Ｂ方向にス
テージを移動して描画を行った前者の場合は透明度の良
い膜が得られたが、Ａ方向にステージを移動することで
得られた膜はややスモークが掛かった外観であった。後
者の膜の膜表面はパウダー状で、かなり粗な状態であっ
た。また、各々電気特性は、透明度の良い膜については
、比抵抗２Ｘ１０−２Ωｃｍが得られたが、スモークが
かったもう一方の膜は、導電性が得られず、透明電極と
しての特性を満たしていなかった。すなわち、後者の例
は、レーザビーム照射直後のまだ熱をもった膜面に基板
面に衝突した後の乱流を伴った反応ガス流が接触し、膜
表面にパウダー状の堆積物が生成していると予想される
。なお、反応ガスの噴出ガス流が基材面に衝突する領域
がレーザビーム照射スポットに対し、約２ｌＩｍ程度以
上前後左右にずれるとやはり、膜の外観は明らかにスモ
ークがかったものとなる。Laser output is IW-10W, beam diameter is approximately 100μ~l
1m. Both the laser beam 1 and the gas nozzle 3 are fixed, and the movement of the film forming position, that is, the drawing of a desired pattern, is achieved by operating the stage 6 on which the base material 5 is fixed. Now, let the gas ejection direction be the direction indicated by A,
In contrast, the direction of movement of the stage is the direction B, which is opposite to the direction of gas ejection, that is, the direction of gas ejection is the same as the direction in which the film is drawn on the substrate, and the direction of movement of the stage is the direction of gas ejection. It is in the same direction as A. That is, the drawn films were compared in two cases in which the gas ejection direction was opposite to the direction of the film on the base material. In the former case, where drawing was performed by moving the stage in the B direction, a film with good transparency was obtained, but the film obtained by moving the stage in the A direction had a slightly smoked appearance. The surface of the latter film was powdery and quite rough. In addition, regarding the electrical properties of each film, a resistivity of 2 x 10-2 Ωcm was obtained for the film with good transparency, but the other film, which had a smoky tint, did not have conductivity and did not meet the characteristics as a transparent electrode. Ta. In other words, in the latter example, the turbulent reaction gas flow that has collided with the substrate surface comes into contact with the still-heated film surface immediately after laser beam irradiation, and powder-like deposits are generated on the film surface. It is expected that Note that if the area where the ejected gas flow of the reactive gas collides with the substrate surface is shifted from the laser beam irradiation spot by about 2 lIm or more in the front, back, left, and right directions, the appearance of the film will become clearly smoked.
特に、基材上での描画進行方向手前にガス流が衝突する
場合、その傾向が大きい。よって、膜の溝画を行う際に
、常に、反応ガス流の基材上での衝突領域がレーザビー
ム照射スポットと一致しており、かつ、その反応ガス流
の水平戒分進行方向が基材に対する招画の進行方向と一
致していることは、良好で均一な膜の描画を行う為に極
めて重要な条件であるといえる。This tendency is particularly strong when the gas flow collides with the front of the drawing direction on the base material. Therefore, when forming grooves on a film, the collision area of the reactive gas flow on the base material always coincides with the laser beam irradiation spot, and the horizontal movement direction of the reactive gas flow is always aligned with the base material. It can be said that matching the advancing direction of the image with respect to the image is an extremely important condition for good and uniform film drawing.
なお、以上の実施例で示した構成は、レーザＣＶＤ法を
用いて作威されるあらゆる描画膜に共通に効果をもたら
すものであり、酸化膜．メタル膜等の膜材質に依らない
。また、実施例では、レーザビームとして、Ｃ○２レー
ザを加熱源として用いているが、この他にもＹ Ａ Ｇ
（Ｙｔｒｉｕａ＋ ＡｌｍｉｎｕｍＧａｒｎｅｔ）
レーザ、あるいはＹＭＧの第２，第４高調波、Ａｒレー
ザ等加熱源としての使用ばかりでなく、光分解反応で戒
膜を行う場合も同様な効果が示される。It should be noted that the configuration shown in the above embodiments has a common effect on all drawing films produced using the laser CVD method, and is effective for all types of drawing films produced using the laser CVD method. It does not depend on the film material such as metal film. In addition, in the example, a C○2 laser is used as a heating source as a laser beam, but in addition to this, Y A G
(Ytriua+ Aluminum Garnet)
Similar effects can be obtained not only when used as a heating source such as a laser, the second and fourth harmonics of YMG, or an Ar laser, but also when a film is formed by a photolysis reaction.
発明の効果
以上のように本発明は、レーザＣＶＤ法で膜の溝画を行
う際に、常に、反応ガス流の基材上での衝突領域がレー
ザビーム照射スボントと一致しており、かつ、その反応
ガス流の水平戊分進行方向が基材に対する描画の進行方
向に一致させる構成を持つレーザＣＶＤ法における膜の
描画方法であり、良好で均一な！ａ画膜を提供するもの
である。Effects of the Invention As described above, the present invention provides a method in which, when grooves are formed in a film using the laser CVD method, the collision area of the reactant gas flow on the base material always coincides with the laser beam irradiation spont, and This is a film drawing method in the laser CVD method that has a configuration in which the horizontal segment progress direction of the reaction gas flow matches the drawing progress direction on the base material, resulting in good and uniform film drawing. It provides an a-picture film.
第１図は本発明の実施例であるレーザＣＶＤ装置の反応
部の構戒図、第２図は本発明の実施例における膜の猫画
時の反応部分を拡大して示した構或図である。
ｌ・・・・・・レーザビーム、３・・・・・・ガスノズ
ル。Fig. 1 is a structural diagram of the reaction section of a laser CVD apparatus according to an embodiment of the present invention, and Fig. 2 is an enlarged structural diagram showing the reaction section during cat drawing of a membrane in an embodiment of the present invention. be. l...Laser beam, 3...Gas nozzle.
Claims (3)
向より照射されるレーザビーム、及び同位置に局部的に
供給される反応ガスより構成され、基材上のレーザビー
ムスポットの位置を連続的に移動し、膜の描画を行う際
、前記反応ガスの流れがレーザビーム照射直後の成膜面
に接触しない様構成するレーザＣＶＤによる膜の描画方
法。(1) The laser beam on the base material consists of a laser beam irradiated from a direction perpendicular to the base material at the desired position on the base material to form a film, and a reactive gas locally supplied to the same position. A method for drawing a film by laser CVD, in which the position of a spot is continuously moved to draw a film so that the flow of the reactive gas does not come into contact with the film-forming surface immediately after laser beam irradiation.
ビーム状のガス流であり、基材上のレーザビーム照射ス
ポット面と同じ領域に、ガス流が衝突するように供給さ
れており、ガスの流れの水平成分の進行方向が基材面に
対し、膜の描画進行方向と同方向となるように構成され
た請求項（１）のレーザＣＶＤによる膜の描画方法。(2) The reactant gas flow to be supplied is a beam-shaped gas flow supplied from a nozzle, and the gas flow is supplied so as to collide with the same area as the laser beam irradiation spot surface on the base material, 2. The method of drawing a film by laser CVD according to claim 1, wherein the direction of movement of the horizontal component of the gas flow is the same as the direction of movement of the film with respect to the surface of the substrate.
ーム、及び、基材のレーザビーム照射部と同一領域に斜
め上方より衝突するように供給される反応ガスを噴出す
るノズル、基材を２次元に移動させるステージから構成
される装置であって、所望の膜の描画を行う際にノズル
の噴出口の水平成分の向きが、常に、基材上の描画が進
行する方向の直線上にあって、かつ、方向が同一となる
よう操作されるレーザＣＶＤ装置。(3) A nozzle that ejects a laser beam that is perpendicularly irradiated onto the base material on which a film is to be formed, and a reactive gas that is supplied so as to collide with the same area of the base material as the laser beam irradiation part from diagonally above; It is a device consisting of a stage that moves a material two-dimensionally, and when drawing a desired film, the horizontal component of the nozzle jet port is always oriented in a straight line in the direction in which drawing progresses on the substrate. Laser CVD equipment that is located above and operated in the same direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18789689A JPH0353068A (en) | 1989-07-20 | 1989-07-20 | Method for plotting film by laser cvd |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18789689A JPH0353068A (en) | 1989-07-20 | 1989-07-20 | Method for plotting film by laser cvd |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0353068A true JPH0353068A (en) | 1991-03-07 |
Family
ID=16214092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18789689A Pending JPH0353068A (en) | 1989-07-20 | 1989-07-20 | Method for plotting film by laser cvd |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0353068A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001073161A1 (en) * | 2000-03-29 | 2001-10-04 | Seiko Epson Corporation | Method for producing ceramic and apparatus for producing the same, semiconductor device, and piezoelectric device |
| WO2001083846A1 (en) * | 2000-03-29 | 2001-11-08 | Seiko Epson Corporation | Method for producing ceramic and apparatus for producing the same, semiconductor device, and piezoelectric device |
| JP2006320416A (en) * | 2005-05-17 | 2006-11-30 | Aichi Prefecture | Muscle training implement with music playing function |
-
1989
- 1989-07-20 JP JP18789689A patent/JPH0353068A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001073161A1 (en) * | 2000-03-29 | 2001-10-04 | Seiko Epson Corporation | Method for producing ceramic and apparatus for producing the same, semiconductor device, and piezoelectric device |
| WO2001083846A1 (en) * | 2000-03-29 | 2001-11-08 | Seiko Epson Corporation | Method for producing ceramic and apparatus for producing the same, semiconductor device, and piezoelectric device |
| US7018676B2 (en) | 2000-03-29 | 2006-03-28 | Seiko Epson Corporation | Method and device for manufacturing ceramics, semiconductor device and piezoelectric device |
| JP2006320416A (en) * | 2005-05-17 | 2006-11-30 | Aichi Prefecture | Muscle training implement with music playing function |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5174826A (en) | Laser-assisted chemical vapor deposition | |
| KR101043792B1 (en) | Method for depositing titania and substrate | |
| US4377735A (en) | Laser working treatment process capable of controlling the form of heated portion of a steel material | |
| CA1281819C (en) | Source of high flux energetic atoms | |
| US4332999A (en) | Method for machining a workpiece with a beam of radiant energy assisted by a chemically-reactive gas | |
| HUT55715A (en) | Process for producing coating on surfaces of glass | |
| JPS5943987B2 (en) | Selective plating method using energy beam heat | |
| US5847357A (en) | Laser-assisted material spray processing | |
| CN109652786B (en) | Coloring method and device based on metal material surface coloring technology | |
| Shannon et al. | High power laser welding in hyperbaric gas and water environments | |
| JPS5852023B2 (en) | Thermospray method for the production of aluminum porous boiling surfaces | |
| JP2003249492A (en) | Plasma discharge processing system, method for forming thin film and base material | |
| JPH0798990B2 (en) | Cross flow laser spray nozzle | |
| JPH0353068A (en) | Method for plotting film by laser cvd | |
| JPH0480116B2 (en) | ||
| JPS59140368A (en) | Method and device for producing thin film | |
| Dai et al. | Improvement of Al thin film morphology with picosecond pulsed laser deposition in burst mode | |
| JP2000309885A (en) | Production of gradient functional material | |
| JPH03174306A (en) | Production of oxide superconductor | |
| US5835519A (en) | Laser thermal plasma method | |
| JP3526935B2 (en) | Laser marking method and laser processing apparatus used for the method | |
| JPS5827036B2 (en) | Laser welding method | |
| JPH06198466A (en) | Rainbow color development processing method | |
| Geretovsky et al. | Dependence of deposition kinetics on precursor concentration and writing speed in pyrolytic laser deposition from solution | |
| JPH0445263A (en) | Production of thin film with large area |