JPH03174306A - Production of oxide superconductor - Google Patents
Production of oxide superconductorInfo
- Publication number
- JPH03174306A JPH03174306A JP1311738A JP31173889A JPH03174306A JP H03174306 A JPH03174306 A JP H03174306A JP 1311738 A JP1311738 A JP 1311738A JP 31173889 A JP31173889 A JP 31173889A JP H03174306 A JPH03174306 A JP H03174306A
- Authority
- JP
- Japan
- Prior art keywords
- target
- film
- oxide superconductor
- laser
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000007740 vapor deposition Methods 0.000 claims abstract description 21
- 239000002245 particle Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 abstract description 23
- 238000000034 method Methods 0.000 abstract description 21
- 238000001704 evaporation Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910014454 Ca-Cu Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
この発明は、超電導マグネット、超電導送電、医療用ｉ
′ａ、超電導エネルギー佇蔵、超電導素子用などとして
応用開発が進められている酸化物超電導体の製造方法に
関する。[Detailed Description of the Invention] "Industrial Application Field" This invention is applicable to superconducting magnets, superconducting power transmission, medical i
This invention relates to a method for manufacturing oxide superconductors, which are currently being developed for applications such as superconducting energy storage and superconducting devices.
「従来の技術」
従来、酸化物系の超電導体を製造する方法として、真空
蒸着法、スパッタリング法、レーザ蒸着法、ＭＩｌ法（
分子線エピタキシー法）、ＣＶＤ法（化学気相成長法）
、ＩＶＤ法（イオン気相成長法）などの成膜法が知られ
ている。また、これらの各種の成膜方法において、均質
で超電導特性の良好な酸化物超電導膜を製造できる方法
として、真空成膜プロセスを用い、熱あるいは高周波プ
ラズマ、イオンビームなどのエネルギーをターゲットに
Ｊｌ＜１射してターゲットから叩き出された粒子を基板
上に堆積させる技術が主流となっている。"Conventional technology" Conventionally, methods for producing oxide-based superconductors include vacuum evaporation, sputtering, laser evaporation, and MIl (
molecular beam epitaxy method), CVD method (chemical vapor deposition method)
, IVD (ion vapor deposition) and other film forming methods are known. In addition, among these various film forming methods, a vacuum film forming process is used as a method for manufacturing an oxide superconducting film that is homogeneous and has good superconducting properties, and Jl< The mainstream technology is to deposit particles ejected from a target by a single shot onto a substrate.
このような各種の成膜法において、緻密な膜の生成が可
能であって、成膜速度の速い技術として、レーザ蒸着法
が注目されている。このレーザ蒸着法は、目的とする酸
化物超電導体の組成と同一あるいは近似した組成のター
ゲットを用い、このターゲットにレーザビームを照射し
てターゲットの表面部分をえぐり取り、この粒子を基材
上に堆積させることで酸化物超電導体を製造する方法で
あり、他の成膜法に比較して以下に説明する利点がある
ことで知られている。Among these various film-forming methods, laser evaporation is attracting attention as a technique that can produce dense films and has a high film-forming rate. This laser vapor deposition method uses a target with a composition that is the same as or similar to the composition of the target oxide superconductor, irradiates the target with a laser beam to scoop out the surface part of the target, and deposits the particles onto the base material. This is a method of manufacturing oxide superconductors by deposition, and is known to have the following advantages compared to other film formation methods.
■通常のスパッタリング法ではターゲット組成と生成膜
の組成がかなりずれる領内があるか、レーザ蒸着法にお
いては、用いたターゲットの組成と生成膜の組成とのず
れが少ないので、目的の組成の酸化物超電導膜を得やす
い利点かある。■ In normal sputtering methods, there is a region where the composition of the target and the composition of the produced film are quite different, or in laser evaporation method, there is a small difference between the composition of the target used and the composition of the produced film, so the oxide of the desired composition can be produced. This has the advantage that it is easy to obtain superconducting films.
■通常のスパッタリング法においては、厚さ１μｍ程度
の酸化物超電導膜を製造するためにＩＯ時１１ｆＪ程度
の処理時１１１ノを必要とするが、レーザ蒸着法におい
ては厚さ数μｍ程度の酸化物超電導膜を１時間程度で製
造できる利点がある。■In the normal sputtering method, a processing time of about 11 fJ at IO is required to produce an oxide superconducting film with a thickness of about 1 μm, but in the laser evaporation method, an oxide superconducting film with a thickness of about several μm is required. This method has the advantage that a superconducting film can be manufactured in about one hour.
■蒸着法やスパッタリング法においては、蒸発源や電極
などを真空雰囲気中に配置する必要があるが、レーザ譜
着法で１よ、レーザ光を処理装置の外部から導くことが
でき、レーザ発行装置などを処理装置の外部に設けるこ
とができるので、処理装置の内部を質の良い真空条件に
保つことが容易であって、種々の気相雰囲気で成膜でき
る利点がある。■In the evaporation method and sputtering method, it is necessary to place the evaporation source and electrodes in a vacuum atmosphere, but with the laser notation method, the laser beam can be guided from outside the processing equipment, and the laser emitting device etc. can be provided outside the processing apparatus, so it is easy to maintain a high-quality vacuum condition inside the processing apparatus, and there is an advantage that films can be formed in various gaseous atmospheres.
「発明が解決しようとする課題」
前述のレーザ蒸着法で基材上に酸化物超電導体の膜を形
成する場合、ターゲット表面の１箇所にレーザビームを
集光照射してその部分から粒子を叩き出すので、叩き出
された粒子はターゲットから放射状Ｉこ広がりつつ拡散
して基Ｈに接近し、基材の表面に衝突して堆積する。従
って基材表面ｆこおいて、ターゲットから遠い部分と近
い部分で堆積する粒子数に差が生じ、基材上に形成され
る膜の質や厚さに不均一性を引き起こす問題があった。"Problem to be Solved by the Invention" When forming an oxide superconductor film on a substrate using the laser vapor deposition method described above, a laser beam is focused on one spot on the target surface to knock out particles from that spot. As a result, the ejected particles spread out radially from the target, diffuse, approach the base H, collide with the surface of the base material, and are deposited. Therefore, on the base material surface f, there is a difference in the number of particles deposited on a part far from the target and a part close to the target, which causes a problem of causing non-uniformity in the quality and thickness of the film formed on the base material.
そして、このようζこ膜質と膜厚が不均一になると、超
電導特性の優れた膜を碁打上の狭い範囲にしか形成でき
ない問題がある。When the film quality and thickness become non-uniform, there is a problem that a film with excellent superconducting properties can only be formed in a narrow range on the board.
本発明は前記課題を解決するためになされたもので、基
材表面の広い範囲にわたり膜質や膜厚の安定した酸化物
超電導体の模を形成することができるｔ！Ｊ遣方法を提
供することを目的とする。The present invention was made to solve the above problems, and it is possible to form an oxide superconductor pattern with stable film quality and thickness over a wide range of the surface of a base material. The purpose is to provide a way to send money.
「課題を解決するための手段」
本発明は前記課題を解決するために、蒸着処理室内Ｉこ
酸化物超電導体または酸化物超電導体と近似組成のター
ゲットを設置し、このターゲットにレーザビームを照射
してターゲットの表面部分をえぐり取り、発生させた粒
子をターゲットの近傍に設置した基材上に堆積させて酸
化物超電導体を製造する方法において、レーザビームを
照射中のターゲットを上下方向と左右方向と斜め方向の
少なくとも１つの方向に橋動さＵ・て成膜するものであ
る。"Means for Solving the Problems" In order to solve the problems described above, the present invention installs an oxide superconductor or a target having a composition similar to the oxide superconductor in a vapor deposition chamber, and irradiates this target with a laser beam. In the method of manufacturing oxide superconductors by gouging out the surface part of the target and depositing the generated particles on a base material placed near the target, the target is irradiated with a laser beam in the vertical and horizontal directions. The film is formed by moving the bridge in at least one of the direction and the diagonal direction.
「作用 」
レーザビームをターゲットに照射して成膜する際にター
ゲットを周動させることでターゲットから叩き出された
粒子の流れを基材表面の広い範囲に振り分けつつ地積さ
せることができ、基材上に（よ厚さと質の均一化した酸
化物超電導体の膜が生成する。また、ターゲットから叩
き出された粒子が碁打上の広い範囲に堆積するので、膜
厚が均一で膜質の整った大面積の酸化物超電導体の膜を
生成できる。更に、レーザ蒸着法で成膜するので、成膜
時間が短くなるとともに、緻密な酸化物超電導体の膜が
生成する。"Function" When forming a film by irradiating the target with a laser beam, by rotating the target, the flow of particles ejected from the target can be distributed over a wide range of the base material surface and deposited on the base material. An oxide superconductor film with a uniform thickness and quality is formed on the top of the Go board.In addition, the particles ejected from the target are deposited over a wide area on the board, resulting in a film with a uniform thickness and quality. A large-area oxide superconductor film can be produced.Furthermore, since the film is formed by laser evaporation, the film formation time is shortened and a dense oxide superconductor film is produced.
「実施例」
第１図は本発明方法を実施するために使用する装置の一
例を示すもので、■は処理室４を示し、この処理容器！
の内部の蒸着処理室１ａには基板２とターゲット３が設
置されている。"Example" Fig. 1 shows an example of the apparatus used to carry out the method of the present invention, where ■ indicates the processing chamber 4, and this processing container!
A substrate 2 and a target 3 are installed in a vapor deposition processing chamber 1a inside.
処理室″ａ１は排気孔１ｂを介して図示略の真空排気装
置に接続されて内部を真空排気できるようになっている
。The processing chamber "a1" is connected to a vacuum evacuation device (not shown) via an exhaust hole 1b so that the inside can be evacuated.
蒸着処理室１ａの底部には基台４が設けられ、この基台
４の上面に基板（基材）２が水平に設置されるとともに
、基板２の斜め上方側に、支持板５によって支持された
ターゲット３カ（傾斜状態で設けられている。A base 4 is provided at the bottom of the vapor deposition chamber 1a, and a substrate (substrate) 2 is installed horizontally on the top surface of the base 4, and is supported by a support plate 5 diagonally above the substrate 2. 3 targets (installed in an inclined position).
前記ターゲット３は、形成しようとする酸化物超電導体
の膜と同等または近似した組成、あるいは、成膜中に退
避しやすい成分を多く含有させた複合酸化物の焼結体、
または、酸化物超電導体のバルクなどから形成されてい
る。現在知られている臨界温度の高い酸化物超電導体と
して具体的には、Ｙ −１３ａ−Ｃｕ−０系、Ｂ１−９
ｒ−Ｃａ−Ｃｕ−０系、Ｔ Ｉ−ｎ ａ−Ｃａ−Ｃｕ
−０系などがあるので、ターゲット３としてこれらの系
のものなどを用いることができる。なお、酸化物面ｒｒ
ｉ導体を構成する元素の中で蒸気圧が高く、蒸着の際に
飛散しやすい元素らあるので、このような元素を含むタ
ーゲット３を使用する場合（よ、蒸気圧の高い元素を目
的とする所定の割合よりも多く含むターゲットを用いれ
ば良い。The target 3 is a sintered body of a composite oxide having a composition equivalent to or similar to that of the oxide superconductor film to be formed, or containing a large amount of components that are easily evacuated during film formation.
Alternatively, it is formed from the bulk of an oxide superconductor. Specifically, currently known oxide superconductors with high critical temperatures include Y-13a-Cu-0 series, B1-9
r-Ca-Cu-0 system, T I-na-Ca-Cu
Since there are -0 series, etc., those of these series can be used as the target 3. Note that the oxide surface rr
Among the elements that make up the i-conductor, some elements have high vapor pressure and are easily scattered during vapor deposition. A target containing more than a predetermined ratio may be used.
前記基台４は加熱ヒータを内蔵したもので、基板２を所
望の温度に加熱できるようになっている。The base 4 has a built-in heater, and can heat the substrate 2 to a desired temperature.
前記支持板５は、その中心部分を通過し、基板３と平行
な中心線５ａを中心として、所要の角度（例えば９００
）回動自在Ｉこ支持されている。なお、前記支持板５は
その近傍に設置された図示略のモータなどの駆動装置に
よって中心軸５ａを中心に一定の速度であるいは間欠的
に橢動運動できるようになっている。The support plate 5 passes through its central portion and is tilted at a required angle (for example, 900 degrees
) It is rotatably supported. The support plate 5 can be slid at a constant speed or intermittently about the central axis 5a by a drive device such as a motor (not shown) installed near the support plate 5.
一方、処理容器１の側方には、レーザ発光装置７と第１
反射１Ｂと集光レンズ９と第２反射鏡１０が設けられ、
レーザ発光装置７が発生さ仕たレーザビームを処理容器
ｌの側壁に取り付けられた透明窓！１を介してターゲッ
ト３に集光照射できるようになっている。レーザ発光装
置７はターゲット３から構成粒子を叩き出すことができ
るものであれば、ＹＡＧレーザ、ＣＯ，レーザ、エキシ
マレーザなどのいずれのものを使用しても良い。On the other hand, on the side of the processing container 1, a laser emitting device 7 and a first
A reflection 1B, a condensing lens 9, and a second reflection mirror 10 are provided,
The laser beam generated by the laser emitting device 7 is transmitted through a transparent window attached to the side wall of the processing container l! It is possible to irradiate the target 3 with focused light through the lens 1. As the laser emitting device 7, any device such as a YAG laser, a CO laser, an excimer laser, etc. may be used as long as it can eject constituent particles from the target 3.
また、処理容器１の上方にはレーザ発光装置１２と集光
レンズ！３が設けられ、処理室４１の天井壁に取り付け
られた透明窓１４を介してレーザビームを基板２に集光
照射し、基板２を加熱できるようになっている。Also, above the processing container 1 is a laser emitting device 12 and a condensing lens! 3 is provided so that the substrate 2 can be heated by concentrating a laser beam on the substrate 2 through a transparent window 14 attached to the ceiling wall of the processing chamber 41.
次に第１図に示す装置を用いて本発明方法を実施する場
合について説明する。Next, the case where the method of the present invention is implemented using the apparatus shown in FIG. 1 will be explained.
基板２とターゲット３を蒸着処理室ｌａ内に第１図に示
すようにセットしたならば、蒸着処理室ｌａを真空排気
する。ここで必要に応じて蒸着処理室１ａに酸素ガスを
導入して蒸着処理室１ａを酸素雰囲気としても良い。ま
た、基台４の加熱ヒータを作動させるか、あるいは、レ
ーザ発光装置！２からレーザビームを基板２に照射して
基板２を所望の温度に加熱する。After the substrate 2 and target 3 are set in the vapor deposition chamber la as shown in FIG. 1, the vapor deposition chamber la is evacuated. Here, if necessary, oxygen gas may be introduced into the vapor deposition processing chamber 1a to create an oxygen atmosphere in the vapor deposition processing chamber 1a. Also, operate the heater on the base 4, or operate the laser emitting device! 2 irradiates the substrate 2 with a laser beam to heat the substrate 2 to a desired temperature.
次１こレーザ発光装置７から発生させたレーザビームを
第１反射鏡８と集光レンズ９と第２反射鏡１０と透明窓
ＩＩを介して蒸着処理室ｌａ内に導き、ターゲット３の
表面に集光照射する。この際に、集光レンズ９の位置調
節を行ってターゲット３の表向にレーザビームの焦点を
合わせる。Next, the laser beam generated from the laser emitting device 7 is guided into the vapor deposition chamber la through the first reflecting mirror 8, the condensing lens 9, the second reflecting mirror 10, and the transparent window II, and is directed onto the surface of the target 3. Emits focused light. At this time, the position of the condensing lens 9 is adjusted to focus the laser beam on the surface of the target 3.
レーダ１ビームが照射されたターゲット３は表面部分が
えぐり取られるか蒸発よれて構成粒子が叩き出され、そ
の粒子は第１図のＲ１線で示すよう１こ放射状に広がり
つつ飛散して基板２の表面に堆積する。そして、この堆
積の際に、支持板５を第１図あるいは第２図示の矢印ａ
方向に所定の速度で往復！出動連動させる。すると、タ
ーゲット３から叩き出された粒子の広がりは更に広い範
囲に広がって基材２の表面に達する。このように粒子の
広がりを拡大しながら基材２上に成膜すると、基材２の
表面の広い範囲に粒子を均一に堆積させることができる
ので、基材２上に厚さと質の均一な堆積層を形成できる
。The surface of the target 3 irradiated with the radar 1 beam is gouged out or evaporated to knock out its constituent particles, which spread radially and scatter as shown by the R1 line in FIG. deposits on the surface of During this deposition, the support plate 5 is moved by the arrow a shown in FIG.
Go back and forth at a predetermined speed in the direction! Coordinate dispatch. Then, the particles ejected from the target 3 spread over a wider range and reach the surface of the base material 2. By forming a film on the base material 2 while expanding the spread of the particles in this way, the particles can be deposited uniformly over a wide range of the surface of the base material 2, so that the film can be deposited on the base material 2 with uniform thickness and quality. Can form a deposited layer.
なお、ターゲット３の展動運動は、連続的であっても間
欠的であっても差し支えない。更にターゲット３を退動
させる際の振幅はターゲット３からの発生粒子を基板２
の表面全部に均一に到達できるようにすることが必要で
ある。Note that the rolling motion of the target 3 may be continuous or intermittent. Furthermore, the amplitude when retracting the target 3 is such that the particles generated from the target 3 are transferred to the substrate 2.
It is necessary to be able to reach all surfaces uniformly.
前述のように粒子が堆積された基板２は加熱されている
ので、堆積された膜は堆積と同時に熱処理される。従っ
て熱処理後に基材上に酸化物超電導体の膜を形成してな
る酸化物超電導体力（得られる。なお、熱処理が十分で
ないときは、蒸着処刑後に別個に熱処理を行い、生成さ
れた酸化物超電導体の膜の結晶構造を整えるようにして
も良い。Since the substrate 2 on which the particles are deposited is heated as described above, the deposited film is heat-treated at the same time as the deposition. Therefore, an oxide superconductor can be obtained by forming an oxide superconductor film on the base material after heat treatment.If the heat treatment is not sufficient, heat treatment may be performed separately after the vapor deposition, and the produced oxide superconductor The crystal structure of the body's membranes may be adjusted.
また、前述のようにターゲット３から叩き出された粒子
は、十分に活性化された状態であるので、基板２上に緻
密に堆積する。また、堆積された膜は熱処理されるので
、緻密で結晶構造の整った優れた超電導特性を発揮する
酸化物超電導体の膜が得られる。Moreover, since the particles ejected from the target 3 as described above are in a sufficiently activated state, they are densely deposited on the substrate 2. Furthermore, since the deposited film is heat-treated, an oxide superconductor film with a dense, well-organized crystal structure and excellent superconducting properties can be obtained.
ところで、第１図の２点鎖線に示すように基台４の左右
に送出ローラ２０と巻取ローラ２１を設け、送出ローラ
２０から送り出したテープ状の基材を基台４に送り、巻
取ローラ２Ｉで巻取りつつレーザ蒸着を行うようにする
ならば、長尺の基材上に酸化物超電導体の模を有する超
電導導体を製造することができる。By the way, as shown by the two-dot chain line in FIG. 1, a delivery roller 20 and a take-up roller 21 are provided on the left and right sides of the base 4, and the tape-shaped base material sent out from the delivery roller 20 is sent to the base 4 and taken up. If laser vapor deposition is performed while winding with the roller 2I, a superconducting conductor having a pattern of an oxide superconductor can be manufactured on a long base material.
前記長尺の超電導導体を製造する場合、前述の場合と同
様にターゲット３を揺動させつつ蒸着することで長尺の
基材の全長全面にわたり特性の良好な酸化物超電導体の
膜を形成することができる。When manufacturing the long superconducting conductor, a film of oxide superconductor with good properties is formed over the entire length of the long base material by vapor deposition while swinging the target 3 as in the case described above. be able to.
また、ターゲット３を１出動させることで幅の広いテー
プ状の基材であっても表面全部に均一な厚さと組成の酸
化物超電導体の膜を生成させることができる。Further, by discharging one target 3, an oxide superconductor film having a uniform thickness and composition can be generated on the entire surface of a wide tape-shaped base material.
ところで前記実施例では、ターゲット３を図面中の矢印
ａ方向に揺動させる例について説明したが、ターゲット
３の揺動方向は矢印ａ方向に限らず、左右上下あるいは
斜め方向のいずれでも良い。By the way, in the embodiment described above, an example in which the target 3 is swung in the direction of the arrow a in the drawings has been described, but the swiveling direction of the target 3 is not limited to the direction of the arrow a, but may be any of the left, right, up, down, or diagonal directions.
「製造例」
第１図に示す構成の蒸着装置を用い、基板としてＳ ｒ
Ｔ ｉｏ 、製の縦１（１＋ａ、横１０ａｍ、厚さ０．
５１ｍ１の基板を用いるとともに、ターゲットとしてＹ
ｏ、ｍＢａ＋、ｓｃ ｕｓｏ ？−５なる組成の酸化
物超電導体からなる円板状ターゲットを用いた。また、
蒸着処理室の内部をｌＯ°’Ｔｏｒｒ１．：排気し、基
板を６４０℃に加熱しつつレーザ蒸着を行った。ターゲ
ット照射用のレーザビームには波長１９３ｎｍのＡｒＦ
レーザを用いた。また、成膜時、ターゲットを第１図の
矢印ａ方向に±４５° １０８７回サイクルで揺動さ
せつつ成膜処理を行った。"Manufacturing Example" Using a vapor deposition apparatus configured as shown in Fig. 1, S r
Made by Tio, length 1 (1+a, width 10am, thickness 0.
A 51 m1 substrate was used, and Y was used as a target.
o, mBa+, sc uso? A disk-shaped target made of an oxide superconductor having a composition of -5 was used. Also,
The inside of the vapor deposition chamber is heated to 10°' Torr1. : Laser deposition was performed while exhausting the air and heating the substrate to 640°C. The laser beam for target irradiation uses ArF with a wavelength of 193 nm.
A laser was used. Further, during film formation, the film formation process was carried out while the target was oscillated in the direction of arrow a in FIG. 1 at a cycle of ±45° 1087 times.
以上の処理によって基板上に厚さ１．０μ曽の酸化物超
電導体の膜を形成した酸化物超電導体を得ることができ
た。Through the above treatment, an oxide superconductor in which a 1.0 μm thick oxide superconductor film was formed on the substrate could be obtained.
得られた酸化物超電導体について、臨界温度を測定する
とともに、液体窒素で冷却して臨界電流密度を測定した
。The critical temperature of the obtained oxide superconductor was measured, and the critical current density was measured after cooling with liquid nitrogen.
臨界温度 ８８ Ｋ
臨界電流密度２．Ｏｘｌ Ｏ’Ａ／ａｍ”、（７７に、
ＯＴ）以上のように本発明方法を実施することで優れた
臨界温度と臨界電流密度を示す酸化物超電導体を得るこ
とができた。Critical temperature: 88 K Critical current density: 2. Oxl O'A/am", (77,
OT) By implementing the method of the present invention as described above, an oxide superconductor exhibiting excellent critical temperature and critical current density could be obtained.
「発明の効果」
以上説明したように本発明は、レーザビームをターゲッ
トに照射してターゲットの表面の粒子の叩き出しを行っ
て基材上に酸化物超電導体の膜の堆積を行う際に、ター
ゲットを揺動させるので、ターゲット表面の広い範囲に
粒子全十分に衝突させて堆積させることができ、基材上
の広い範囲に、厚さと質の均一な緻密な酸化物超電導体
の膜を形成できる効果がある。"Effects of the Invention" As explained above, the present invention provides the following advantages when depositing an oxide superconductor film on a substrate by irradiating the target with a laser beam to knock out particles on the surface of the target. Since the target is oscillated, all the particles can be fully collided and deposited over a wide range of the target surface, forming a dense oxide superconductor film with uniform thickness and quality over a wide range of the base material. There is an effect that can be done.
第１図は本発明方法の実施に用いて好適なレーザ蒸着装
置の一例を示す構成図、第２図はターゲットと基板の位
置関係を示す説明図である。
１・・・処理容替、１１・・蒸着処理室、ｔｂ・・・排
気孔、２・・・基板、３・・・ターゲット、４・・・基
台、５・・・支持板、７．１２・・・レーザ発光装置、
８・・・第１反射鏡、９．１３・・・集光レンズ、ＩＯ
・・・第２反射鏡、１１゜１４・・・透明窓。FIG. 1 is a configuration diagram showing an example of a laser evaporation apparatus suitable for carrying out the method of the present invention, and FIG. 2 is an explanatory diagram showing the positional relationship between a target and a substrate. 1... Processing container exchange, 11... Vapor deposition processing chamber, tb... Exhaust hole, 2... Substrate, 3... Target, 4... Base, 5... Support plate, 7. 12... Laser emitting device,
8... First reflecting mirror, 9.13... Condensing lens, IO
...Second reflecting mirror, 11°14...Transparent window.
Claims (1)
近似組成のターゲットを設置し、このターゲットにレー
ザビームを照射してターゲットの表面部分をえぐり取り
、発生させた粒子をターゲットの近傍に設置した基材上
に堆積させて酸化物超電導体を製造する方法において、 レーザビームを照射中のターゲットを上下方向と左右方
向と斜め方向の少なくとも一つの方向に揺動させて成膜
することを特徴とする酸化物超電導体の製造方法。[Claims] An oxide superconductor or a target having a composition similar to that of the oxide superconductor is installed in a vapor deposition chamber, and the target is irradiated with a laser beam to gouge out the surface of the target to remove the generated particles. In a method of manufacturing oxide superconductors by depositing them on a base material placed near a target, the target being irradiated with a laser beam is oscillated in at least one of the vertical, horizontal, and diagonal directions. A method for producing an oxide superconductor characterized by forming a film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1311738A JPH03174306A (en) | 1989-11-30 | 1989-11-30 | Production of oxide superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1311738A JPH03174306A (en) | 1989-11-30 | 1989-11-30 | Production of oxide superconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03174306A true JPH03174306A (en) | 1991-07-29 |
Family
ID=18020881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1311738A Pending JPH03174306A (en) | 1989-11-30 | 1989-11-30 | Production of oxide superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03174306A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0702416A1 (en) * | 1994-09-16 | 1996-03-20 | Sumitomo Electric Industries, Ltd | Method and apparatus for depositing superconducting layer onto the substrate surface via off-axis laser ablation |
| JP2003105530A (en) * | 2001-09-27 | 2003-04-09 | Vacuum Products Kk | Laser abrasion device |
| JP2006009072A (en) * | 2004-06-24 | 2006-01-12 | Toyota Central Res & Dev Lab Inc | Method for reforming surface of substrate and device for reforming surface of substrate |
| JP2011012349A (en) * | 2010-10-01 | 2011-01-20 | Hochiki Corp | Thin film deposition apparatus and thin film deposition method using the same |
| JP4621333B2 (en) * | 2000-06-01 | 2011-01-26 | ホーチキ株式会社 | Thin film formation method |
| JP2013122065A (en) * | 2011-12-09 | 2013-06-20 | Sumitomo Electric Ind Ltd | Method and apparatus for depositing functional thin film |
| CN107032298A (en) * | 2017-04-12 | 2017-08-11 | 河海大学常州校区 | The method and device of circular nano particle micro-structural is prepared based on ultrahigh-order mode |
-
1989
- 1989-11-30 JP JP1311738A patent/JPH03174306A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0702416A1 (en) * | 1994-09-16 | 1996-03-20 | Sumitomo Electric Industries, Ltd | Method and apparatus for depositing superconducting layer onto the substrate surface via off-axis laser ablation |
| JP4621333B2 (en) * | 2000-06-01 | 2011-01-26 | ホーチキ株式会社 | Thin film formation method |
| JP2003105530A (en) * | 2001-09-27 | 2003-04-09 | Vacuum Products Kk | Laser abrasion device |
| JP2006009072A (en) * | 2004-06-24 | 2006-01-12 | Toyota Central Res & Dev Lab Inc | Method for reforming surface of substrate and device for reforming surface of substrate |
| JP2011012349A (en) * | 2010-10-01 | 2011-01-20 | Hochiki Corp | Thin film deposition apparatus and thin film deposition method using the same |
| JP2013122065A (en) * | 2011-12-09 | 2013-06-20 | Sumitomo Electric Ind Ltd | Method and apparatus for depositing functional thin film |
| CN107032298A (en) * | 2017-04-12 | 2017-08-11 | 河海大学常州校区 | The method and device of circular nano particle micro-structural is prepared based on ultrahigh-order mode |
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