JPH0351822A - Production of nonlinear element - Google Patents
Production of nonlinear elementInfo
- Publication number
- JPH0351822A JPH0351822A JP1188108A JP18810889A JPH0351822A JP H0351822 A JPH0351822 A JP H0351822A JP 1188108 A JP1188108 A JP 1188108A JP 18810889 A JP18810889 A JP 18810889A JP H0351822 A JPH0351822 A JP H0351822A
- Authority
- JP
- Japan
- Prior art keywords
- upper layer
- layer metal
- photosensitive resin
- metal
- nonlinear element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 57
- 239000002184 metal Substances 0.000 claims abstract description 57
- 238000005530 etching Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000012212 insulator Substances 0.000 claims abstract description 11
- 238000000992 sputter etching Methods 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 2
- 239000011347 resin Substances 0.000 abstract description 29
- 229920005989 resin Polymers 0.000 abstract description 29
- 239000007788 liquid Substances 0.000 abstract description 4
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、アクティブマトリックス方式液晶表示パネル
において液晶スイッチング素子に用いられる金属−絶縁
体−金属構造を有する非線形素子（以下、ＭＩＭ素子と
記す）の製造方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a nonlinear element (hereinafter referred to as an MIM element) having a metal-insulator-metal structure used as a liquid crystal switching element in an active matrix type liquid crystal display panel. Relating to a manufacturing method.
液晶表示パネルは実用化が進み、現在では高品質高密度
化が望まれている。これは、ＭＩＭ素子を用いたアクテ
ィブマトリンクス方式において可能である。As the practical use of liquid crystal display panels progresses, high quality and high density are now desired. This is possible in an active matrix method using MIM elements.
ＭＩＭ素子においては、導電体は金属としてみなすこと
ができ、例えばタンタル（Ｔａ）−ｅ化タンタル（Ｔａ
ｇ）−酸化インジウムスズ（ＩＴＯ）のような金属−絶
縁体一導電体（金属）構造のＭＩＭ素子を液晶表示パネ
ルに使用する場合、次のような工程により製造すること
ができる。In MIM devices, the conductor can be regarded as a metal, for example tantalum (Ta)-tantalum e-oxide (Ta).
g) When an MIM element having a metal-insulator-conductor (metal) structure such as indium tin oxide (ITO) is used in a liquid crystal display panel, it can be manufactured by the following steps.
第２図（ａ）は液晶表示パネルを示す平面図、第２図（
ｂ）は第２図（ａ）におけるＡ−Ｂ断面の拡大した断面
図である。以下、第２図（ａ）、（ｂ）を交互に参照し
て説明する。Figure 2(a) is a plan view showing the liquid crystal display panel;
b) is an enlarged sectional view of the AB section in FIG. 2(a). The following description will be made with alternate reference to FIGS. 2(a) and 2(b).
ガラス基板１の全面にＴａをスパッタリング法により形
成し、さらに全面に感光性樹脂を形成する。フォトリソ
グラフィにより感光性樹脂を下層金属２と配線７とのパ
ターン形状にパターニングし、前記の感光性樹脂をエツ
チングマスクとしてＴａをエツチングし下層金属２と配
線７とを形成する。Ta is formed on the entire surface of the glass substrate 1 by a sputtering method, and then a photosensitive resin is further formed on the entire surface. The photosensitive resin is patterned by photolithography into the pattern shape of the lower metal 2 and the wiring 7, and Ta is etched using the photosensitive resin as an etching mask to form the lower metal 2 and the wiring 7.
次に、感光性樹脂を除去後、陽極酸化法によりＴａ表面
に絶縁体４としてＴａＯを形成する。Next, after removing the photosensitive resin, TaO is formed as an insulator 4 on the Ta surface by anodic oxidation.
次に、全面にスパッタリング法によりＩＴＯを形成し、
さらに全面に感光性樹脂を形成する。フォトリソグラフ
ィにより感光性樹脂を上層金属５と液晶駆動用画素電極
８とのパターン形状にパターニングし、前記の感光性樹
脂をエツチングマスクとしてＩＴＯをエツチングし上層
金属５と液晶駆動用画素電極８とを形成する。Next, ITO is formed on the entire surface by sputtering method,
Furthermore, a photosensitive resin is formed on the entire surface. The photosensitive resin is patterned by photolithography into the pattern shape of the upper layer metal 5 and the pixel electrode 8 for driving the liquid crystal, and the ITO is etched using the photosensitive resin as an etching mask to form the upper layer metal 5 and the pixel electrode 8 for driving the liquid crystal. Form.
その際、上層金属５であるＩＴＯと感光性樹脂との密着
が非常に悪いため、第３図（ａｌに示すようにＩＴＯか
らなる上層金属５と感光性樹脂６の界面にエツチング液
が入り込み、上層金属５のサイドエッチが進行し、上層
金属５のエツチングバラツキが生じる。そのため感光性
樹脂６の密着力を向上させる一般的な方法である。感光
性樹脂パターニング後の熱処理温度を高（する方法を用
いてＩＴＯのパターニングを行っている。At this time, since the adhesion between ITO, which is the upper metal layer 5, and the photosensitive resin is very poor, the etching solution enters the interface between the upper layer metal 5, which is made of ITO, and the photosensitive resin 6, as shown in FIG. Side etching of the upper layer metal 5 progresses, resulting in uneven etching of the upper layer metal 5. Therefore, this is a general method for improving the adhesion of the photosensitive resin 6. A method of increasing the heat treatment temperature after patterning the photosensitive resin ITO is patterned using
感光性樹脂パターニング後の熱処理温度を高（する方法
を用いると、感光性樹脂の密着力は向上するが、第３図
（ｂ）に示すように、熱により感光性樹脂６自身の形状
が変化する。そのため、感光性樹脂６のバターニング性
が悪化し、第３図（ａｌを用いて説明したと同様に上層
金属５のエツチングバラツキが生じる。If a method of increasing the heat treatment temperature after patterning the photosensitive resin improves the adhesion of the photosensitive resin, however, as shown in FIG. 3(b), the shape of the photosensitive resin 6 itself changes due to the heat. As a result, the patterning property of the photosensitive resin 6 deteriorates, and variations in etching of the upper layer metal 5 occur as explained using FIG. 3 (al).
ＭＩＭ素子の場合、素子面積は、絶縁体４を介して下層
金属２と上層金属５とが重なった領域である。上層金属
６のエツチングバラツキは、すなわち、素子面積バラツ
キとなり、素子特性が不均一になる。In the case of an MIM element, the element area is a region where lower metal layer 2 and upper layer metal 5 overlap with insulator 4 in between. Etching variations in the upper layer metal 6 result in variations in device area, resulting in non-uniform device characteristics.
本発明の目的は、このような課題を解決し素子特性が均
一な、高品質高密度の液晶表示パネルの製造方法を提供
することである。An object of the present invention is to provide a method for manufacturing a high-quality, high-density liquid crystal display panel that solves these problems and has uniform device characteristics.
上記の目的は、下層金属−絶縁体−上層金属構造の非線
形素子の製造方法において、上層金属を形成後、上層金
属表面にスパッタエツチング処理、あるいはりアクティ
ブイオンエツチング処理、あるいは上層金属のエツチン
グ液によりエツチング処理を施すことによって解決され
る。The above purpose is to use a method for manufacturing a nonlinear element with a lower metal-insulator-upper metal structure. This problem can be solved by etching.
以下、本発明の実施例について、図面を参照しながら詳
細に説明する。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
〔実施例１〕
第１図ｔａ＋〜（ｄｌは、本実施例により製作したＭＩ
Ｍ素子を用いた液晶表示パネルの製造方法を工程順に示
す断面図であり、第２図（ａ）におけるＡ−Ｂ断面に相
当する。以下、第１図（ａ）〜（ｄ）と第２図（ａ）と
を参照して説明する。[Example 1] Figure 1 ta+~(dl is the MI manufactured according to this example)
FIG. 2 is a cross-sectional view showing the manufacturing method of a liquid crystal display panel using M elements in order of steps, and corresponds to the AB cross section in FIG. 2(a). The following description will be made with reference to FIGS. 1(a) to 2(d) and FIG. 2(a).
第１図（ａｔに示すように、ガラス基板１の全面にＴａ
をスパッタリング法により形成し、さらに全面に感光性
樹脂６を形成する。フォトリングラフィにより感光性樹
脂６を第２図（ａ）に示す下層金属２と配線７のパター
ン形状にパターニングし、感光性樹脂６をエツチングマ
スクとしてＴａをエツチングし下層金属２と配線７とを
形成する。As shown in FIG. 1 (at), Ta is applied to the entire surface of the glass substrate 1.
is formed by a sputtering method, and a photosensitive resin 6 is further formed on the entire surface. The photosensitive resin 6 was patterned by photolithography into the pattern shape of the lower metal 2 and wiring 7 shown in FIG. 2(a), and Ta was etched using the photosensitive resin 6 as an etching mask to separate the lower metal 2 and wiring 7. Form.
次に、ｉｆ図（ｂ）に示すように、感光性樹脂３を除去
後、クエン酸０．１％水溶液中、３０Ｖの電圧で、Ｔａ
を陽極酸化し、下層金属２表面に絶縁体４としてＴａＯ
を形成する。Next, as shown in the if diagram (b), after removing the photosensitive resin 3, the Ta
is anodized, and TaO is applied as an insulator 4 to the surface of the lower metal 2.
form.
次に第１図（ｃ）に示すように、全面にスパッタリング
法により上層金属５としてＩＴＯを形成し、その後下記
に記載する条件により上層金属５表面にスパッタエツチ
ング処理を施す。Next, as shown in FIG. 1(c), ITO is formed as the upper layer metal 5 on the entire surface by sputtering, and then the surface of the upper layer metal 5 is subjected to sputter etching treatment under the conditions described below.
ガス種：Ａ「またはＮまたはＨｅまたはこれらの混合ガ
ス
ガス圧：１帥ｔｏｒｒ〜８胴ｔｏｒｒ
１１、Ｆ電カニ ０．０５Ｗ／ｃｎｔ〜０．５Ｗ／ｃｎ
ｉ処理時間： １ｍ１ｎ〜１０ｍ１ｎ
次に、全面に感光性樹脂６を形成し、フォトリングラフ
ィにより感光性樹脂６を第２図（ａｌに示す上層金属５
と液晶駆動用画素電極８とのパターン形状にパターニン
グし、感光性樹脂６のエツチングマスクとして下記に記
載する条件により、第１図（ｄ）に示すようにＩＴＯを
エツチングし上層金属５と液晶駆動用画素電極８とを形
成する。Gas type: A or N or He or a mixture thereof Gas pressure: 1 torr to 8 torr 11, F electric crab 0.05W/cnt to 0.5W/cn
Processing time: 1 m1n to 10 m1n Next, a photosensitive resin 6 is formed on the entire surface, and the photosensitive resin 6 is coated with the upper layer metal 5 shown in FIG. 2 (al) by photolithography.
The upper layer metal 5 and the liquid crystal drive pixel electrode 8 are patterned, and the ITO is etched as an etching mask for the photosensitive resin 6 as shown in FIG. 1(d) under the conditions described below. pixel electrode 8 is formed.
エツチング液：ＦｅＣｌ３とＨＣＩとＨ，Ｏとの混合液
液 温 度＝ ３０℃〜６０°Ｃ
第１図（Ｃ）に示すように、上層金属５表面にスパッタ
エツチング処理を施すことにより、上層金属５表面が適
度に荒れ、上層金属５と感光性樹脂６との密着性が向上
する。これにより第３図（ａｌに示すように上層金属５
と感光性樹脂６の界面にエツチング液が入り込むことが
なくなり、上層金属５のエツチングバラツキ、すなわち
、素子面積のバラツキがなくなり、均一な素子特性が得
られる。Etching solution: Mixed liquid of FeCl3, HCI, H, O Temperature = 30°C to 60°C As shown in FIG. 1(C), by sputter etching the surface of the upper layer metal 5, 5 surface is appropriately roughened, and the adhesion between the upper layer metal 5 and the photosensitive resin 6 is improved. As a result, as shown in FIG. 3 (al), the upper layer metal 5
The etching liquid does not enter the interface between the photosensitive resin 6 and the photosensitive resin 6, and the etching variations in the upper metal layer 5, that is, the variations in the device area, are eliminated, and uniform device characteristics can be obtained.
〔実施例２〕
〔実施例１〕のスパッタエツチング処理の代わ９として
、上層金属５表面を下記に記載する条件により、リアク
ティブイオンエツチング処理を施すことにより〔実施例
１〕と同様な効果が得られる。[Example 2] Instead of the sputter etching treatment in [Example 1], the same effect as in [Example 1] was obtained by performing reactive ion etching treatment on the surface of the upper layer metal 5 under the conditions described below. can get.
活性ガス種： ＣＦＸＨ，ｘ（Ｘ＝１〜４）またはｃ
ｔ Ｆ、Ｈ６−ｘ （Ｘ＝１〜６ ）またはＳ Ｆ ａ
／ＨｅまたはＮ Ｆ ｓ ／Ｈｅ ｆたはこれらの混
合ガス
ガ ス 圧 ；５Ｐａ 〜１００Ｐａ投入電カニ〇
、ＩＷ／ｃ！！ｔ〜１０Ｗ／ｄ処理時間：１騙〜１０龍
〔実施例３〕
〔実施例１〕のスパッタエツチング処理の代わりとして
、上層金属５であるＩＴＯ表面を下記に記載する条件に
より、エツチング処理を施すことにより〔実施例１〕と
同様な効果が得られる。Active gas species: CFXH, x (X = 1 to 4) or c
t F, H6-x (X=1-6) or S Fa
/He or N F s /He f or a mixture thereof Gas pressure; 5 Pa to 100 Pa power supply crab〇, IW/c! ! t~10W/d Processing time: 1~10W [Example 3] As an alternative to the sputter etching treatment of [Example 1], the ITO surface that is the upper layer metal 5 was etched under the conditions described below. As a result, the same effects as in [Example 1] can be obtained.
エツチング液 ：ＦｅＣ６，とＨＣＩとＨ２Ｏとの混合
液
液温度：３０℃〜６０°Ｃ
処理時間：１ｍｍ〜３朋
本実施例では、絶縁体の形成方法として陽極酸化法を用
いた例で説明したが、スパッタリング法またはプラズマ
化学気相成長法などを用いても、酸化シリコン膜や窒化
シリコン膜等からなる絶縁体を形成しても良い。Etching solution: Mixture of FeC6, HCI, and H2O Liquid temperature: 30°C to 60°C Processing time: 1mm to 3mm In this example, an example was explained in which an anodizing method was used as the method for forming the insulator. However, an insulator made of a silicon oxide film, a silicon nitride film, or the like may be formed using a sputtering method or a plasma chemical vapor deposition method.
また本実施例では、下層金属２としてＴａ上層金属５と
してＩＴＯ，絶縁体４としてＴａＯを用いたが、上層及
び下層金属として、アルミニウム、クロム、タングステ
ン、ニッケルなどの他の金属、絶縁体として窒化シリコ
ンや酸化シ替コン等を用いてもＭＩＭ素子を製造するこ
とができる。Further, in this example, Ta was used as the lower layer metal 2, ITO was used as the upper layer metal 5, and TaO was used as the insulator 4, but other metals such as aluminum, chromium, tungsten, and nickel were used as the upper and lower layer metals, and nitride was used as the insulator. MIM elements can also be manufactured using silicon, silicon oxide, or the like.
以上の説明で明らかなよ５に、本発明によれば、上層金
属と感光性樹脂との密着が向上し、上層金属と感光性樹
脂の界面のエツチング液浸入による上層金属のサイドエ
ッチを防ぐことができる。そのため、上層金属のエツチ
ングバラツキ、すなわち、素子面積のバラツキがなくな
り、均一な素子特性を得ることができる。As is clear from the above explanation, the present invention improves the adhesion between the upper layer metal and the photosensitive resin, and prevents side etching of the upper layer metal due to the etching solution entering the interface between the upper layer metal and the photosensitive resin. I can do it. Therefore, variations in etching of the upper layer metal, that is, variations in device area, are eliminated, and uniform device characteristics can be obtained.
第１図（ａ）〜（ｄ）は本発明におけるＭＩＭ素子の製
造方法を工程順に示す断面図、第２図（ａ）、（ｂ）は
ＭＩＭ素子を用いた液晶表示パネルを示し、第２図（ａ
）は平面間、第２図（ｂ）は第２図（ａ）におけるＡ−
Ｂ断面の断面図、第３図（ａ）、（ｂ）は従来例におけ
る問題点を説明するための断面図である。
１・・・・・・ガラス基板、
２・・・・・・下層金属、
４・・・・・・絶縁体、
５・・・・・・上層金属。
第１図
（Ｇ）
（ｂ）
第２図
（ａ）
（ｂ）
第１図
（Ｃ）
（ｄ）
第３図
（Ｇ）
（ｂ）1(a) to 1(d) are cross-sectional views showing the manufacturing method of the MIM element according to the present invention in order of steps, and FIGS. 2(a) and 2(b) show a liquid crystal display panel using the MIM element. Figure (a
) is between planes, and Fig. 2(b) is A- in Fig. 2(a).
3(a) and 3(b) are cross-sectional views for explaining problems in the conventional example. 1... Glass substrate, 2... Lower layer metal, 4... Insulator, 5... Upper layer metal. Figure 1 (G) (b) Figure 2 (a) (b) Figure 1 (C) (d) Figure 3 (G) (b)
Claims (3)
層金属上に絶縁体形成し、その後前記絶縁体上に上層金
属を形成する非線形素子の製造方法において、前記上層
金属を形成後、前記上層金属表面にスパッタエッチング
処理を施すことを特徴とする非線形素子の製造方法。(1) In a method for manufacturing a nonlinear element, in which a lower metal layer is formed on a glass substrate, an insulator is formed on the lower metal layer, and an upper layer metal is then formed on the insulator, after forming the upper layer metal, the A method for manufacturing a nonlinear element, characterized by subjecting an upper layer metal surface to sputter etching treatment.
上層金属表面にリアクティブイオンエッチング処理を施
すことを特徴とする非線形素子の製造方法。(2) In the method for manufacturing a nonlinear element according to claim 1,
A method for manufacturing a nonlinear element, characterized by performing reactive ion etching treatment on the surface of an upper layer metal.
上層金属表面を前記上層金属のエッチング液によりエッ
チング処理を施すことを特徴とする非線形素子の製造方
法。(3) In the method for manufacturing a nonlinear element according to claim 1,
1. A method of manufacturing a nonlinear element, comprising etching a surface of an upper layer metal using an etchant for the upper layer metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1188108A JPH0351822A (en) | 1989-07-20 | 1989-07-20 | Production of nonlinear element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1188108A JPH0351822A (en) | 1989-07-20 | 1989-07-20 | Production of nonlinear element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0351822A true JPH0351822A (en) | 1991-03-06 |
Family
ID=16217844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1188108A Pending JPH0351822A (en) | 1989-07-20 | 1989-07-20 | Production of nonlinear element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0351822A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8570300B2 (en) | 2010-09-24 | 2013-10-29 | Japan Display West, Inc. | Touch detection function display device and electronic apparatus |
-
1989
- 1989-07-20 JP JP1188108A patent/JPH0351822A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8570300B2 (en) | 2010-09-24 | 2013-10-29 | Japan Display West, Inc. | Touch detection function display device and electronic apparatus |
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