JPH0344472A - Production of plasma thin film - Google Patents
Production of plasma thin filmInfo
- Publication number
- JPH0344472A JPH0344472A JP17851689A JP17851689A JPH0344472A JP H0344472 A JPH0344472 A JP H0344472A JP 17851689 A JP17851689 A JP 17851689A JP 17851689 A JP17851689 A JP 17851689A JP H0344472 A JPH0344472 A JP H0344472A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- plasma
- semiconductor substrate
- film
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000010408 film Substances 0.000 claims abstract description 10
- 239000012495 reaction gas Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 18
- 239000004065 semiconductor Substances 0.000 abstract description 16
- 239000000376 reactant Substances 0.000 abstract 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To stably form a thin film by impressing a high frequency to form a thin film on a semiconductor substrate, then cutting off the main gaseous reactant, introducing a gas not growing a film and gradually lowering the high frequency output. CONSTITUTION:Insulated upper and lower electrodes 32 and 33 are arranged in a vacuum vessel 34 in parallel with each other, the semiconductor substrate 35 kept at a specified temp. is introduced, and the vessel 34 is transiently evacuated. Gaseous reactants such as Si(OC2H5)4 and O2 are introduced at a specified flow rate to control the pressure, and then a high frequency RF is impressed on the electrodes 32 and 33 to form a plasma thin film. After a specified time, the main gaseous reactant is cut off to lower the pressure, gaseous O2 is introduced, the RF output is gradually lowered to diminish the electric charge accumulated on the substrate 35 to zero. Consequently, the substrate 35 is not attracted by the lower electrode 33, and a film is stably formed without any trouble in transport.
Description
【発明の詳細な説明】
［産業上の利用分野１
本発明は、プラズマ薄膜の製造方法に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field 1] The present invention relates to a method for manufacturing a plasma thin film.
従来、半導体基板上にプラズマ酸化シリコン膜を形成す
る方法は、例えば第３図に示すように表面を絶縁した電
極を平行に配置し、一定温度に保たれた真空容器内に半
導体基板を搬送する。続いて、容器内を真空に引いた後
、チャートによって膜成長に必要な反応ガスを流す、ガ
スの流量と圧力が所定値に達した後、前記電極に高周波
（ＲＦ）を印加し、一定時間保持した後、高周波（ＲＦ
）を切る。膜形成の終了した半導体基板は真空容器外に
搬出される。Conventionally, a method for forming a plasma silicon oxide film on a semiconductor substrate involves arranging electrodes with insulated surfaces in parallel, as shown in FIG. 3, and transporting the semiconductor substrate into a vacuum container maintained at a constant temperature. . Next, after the inside of the container is evacuated, a reaction gas necessary for film growth is caused to flow according to a chart. After the gas flow rate and pressure reach a predetermined value, radio frequency (RF) is applied to the electrodes for a certain period of time. After holding, high frequency (RF
). The semiconductor substrate on which film formation has been completed is carried out of the vacuum container.
しかしながら、従来技術では、膜形成終了後高周波（Ｒ
Ｆ）を急激に切るために印加された電荷の一部が半導体
基板上に残る６通常、下部電極は、半導体基板の支持も
兼ねているので、残った電荷は、半導体基板と電気的に
絶縁され電極間で逃げ場を失い静電気力となって半導体
基板と電極を引きつける。静電気力は酸化シリコン膜の
生成条件によっては大きな力となり、搬送トラブルを引
き起こしていた。However, in the conventional technology, high frequency (R
Part of the charge applied to abruptly cut F) remains on the semiconductor substrate 6 Normally, the lower electrode also serves as a support for the semiconductor substrate, so the remaining charge is electrically insulated from the semiconductor substrate. It loses its escape between the electrodes and becomes an electrostatic force that attracts the semiconductor substrate and the electrodes. Depending on the conditions under which the silicon oxide film is formed, electrostatic force can become a large force, causing transportation problems.
しかるに本発明は、かかる課題を解決するちのであり、
その目的とするところは、搬送トラブルのない安定した
プラズマ薄膜を提供することである。However, the present invention solves these problems,
The aim is to provide a stable plasma thin film without transportation troubles.
［課題を解決するための手段Ｊ
本発明によるプラズマ薄膜の製造方法は、（１）高周波
（ＲＦ）を印加したプラズマＣＶＤにより薄膜を形成し
、続いて主反応ガスを遮断し、膜を成長させないガスを
流しながら、高周波（ＲＦ）出力を経時的に変化させて
いく。[Means for Solving the Problems J The method for producing a plasma thin film according to the present invention includes (1) forming a thin film by plasma CVD applying radio frequency (RF), and then blocking the main reaction gas to prevent the film from growing. The radio frequency (RF) output is changed over time while the gas is flowing.
（２）請求項１記載の変化が１００％から徐々に小さく
なっていく。(2) The change described in claim 1 gradually decreases from 100%.
（３）請求項１記載の変化が１００％から一旦零になっ
た後、再度５０％以下の値をとりその後零になる。(3) After the change described in claim 1 once becomes zero from 100%, it takes a value of 50% or less again and then becomes zero.
ことを特徴とする。It is characterized by
以下本発明の実施例における工程を、第１図に示すチャ
ートに基づいて詳細に説明する。Hereinafter, steps in an embodiment of the present invention will be explained in detail based on the chart shown in FIG.
まず、トランジスタや抵抗等の半導体素子及びアルミニ
ウム配線の形成された半導体基板をプラズマ酸化シリコ
ン膜を形成するために、約４００℃に保たれ、絶縁され
た電極が平行に配置された真空容器内に搬送する。この
容器内を一旦真空に引いた後、ＴＥＯＳ ［Ｓ Ｌ （
ＱＣｓ Ｈｓ ） ４］ １０□等の反応ガスを流し、
所定の流量、圧力にコントロールした後、１３．５６Ｍ
Ｈｚ、４００Ｗの高周波（ＲＦ）を印加する。所望の時
間経過した後、主反応ガス（ＴＥＯＳ）を切り、圧力を
下げ、０２ガスを流しながら徐々にＲＦ出力を下げてい
く、半導体基板上に蓄積された電荷は、ＲＦの減少と共
に減っていきついには零になり、基板を下部電極から離
そうとして吸着することはなくなる。First, in order to form a plasma silicon oxide film, a semiconductor substrate on which semiconductor elements such as transistors and resistors and aluminum wiring have been formed is kept at approximately 400°C and placed in a vacuum chamber with insulated electrodes arranged in parallel. transport. Once the inside of this container is evacuated, TEOS [S L (
QCs Hs) 4] Flow a reaction gas such as 10□,
After controlling the flow rate and pressure to the specified level, 13.56M
Radio frequency (RF) of Hz and 400 W is applied. After the desired time has elapsed, turn off the main reaction gas (TEOS), lower the pressure, and gradually lower the RF output while flowing the 02 gas.The charge accumulated on the semiconductor substrate will decrease as the RF decreases. It will eventually reach zero, and the substrate will no longer be attracted to the lower electrode in an attempt to separate it.
または、第２図に示すチャートでは、同様に所望の時間
の経過した後、主反応ガス（ＴＥＯＳ）を切り、０２ガ
スのみを流し圧力を下げ、ＲＦを一旦切った後、再度ご
く弱いＲＦを印加し、切る。半導体基板に蓄積された電
荷は２度目の印加によって０２のプラズマ状態を導体と
して電極から逃げ、吸着は起こらない。Alternatively, in the chart shown in Figure 2, after the desired time has elapsed, the main reaction gas (TEOS) is turned off, only the 02 gas is flowed to lower the pressure, the RF is turned off once, and then a very weak RF is turned on again. Apply and cut. The charge accumulated in the semiconductor substrate escapes from the electrode by using the plasma state of 02 as a conductor by the second application, and no adsorption occurs.
［発明の効果］
以上の如く本発明によれば、プラズマによる成膜時に起
こる電極と半導１体基板の吸着をなくすことができ半導
体基板上に安定した薄膜を形成することが出来る。[Effects of the Invention] As described above, according to the present invention, it is possible to eliminate adhesion between an electrode and a single semiconductor substrate that occurs during film formation by plasma, and to form a stable thin film on a semiconductor substrate.
第１図及び第２図は、本発明の一実施例によるプラズマ
薄膜形成時のＲＦ出力、主反応ガス及び酸素の流量を示
すチャートである。
第３図は、プラズマ薄膜の形成装置の概略図である。
第４図は、従来のプラズマ薄膜形成時のＲＦ出力、主反
応ガス及び酸素の流量を示すチャートである。
１
２
３
４
５
・ＲＦ発信器
・上部電極
・下部電極
・真空容器
・半導体基板FIGS. 1 and 2 are charts showing RF output, main reaction gas, and oxygen flow rates during plasma thin film formation according to an embodiment of the present invention. FIG. 3 is a schematic diagram of a plasma thin film forming apparatus. FIG. 4 is a chart showing RF output, main reaction gas, and oxygen flow rates during conventional plasma thin film formation. 1 2 3 4 5 ・RF transmitter・upper electrode・lower electrode・vacuum container・semiconductor substrate
Claims (3)
薄膜を形成し、続いて主反応ガスを遮断し、膜を成長さ
せないガスを流しながら、高周波（ＲＦ）出力を経時的
に変化させていくことを特徴とするプラズマ薄膜の製造
方法。(1) Forming a thin film by plasma CVD applying radio frequency (RF), then blocking the main reaction gas and changing the radio frequency (RF) output over time while flowing a gas that does not cause film growth. A method for producing a plasma thin film characterized by:
なっていくことを特徴とするプラズマ薄膜の製造方法。(2) A method for producing a plasma thin film, characterized in that the change according to claim 1 gradually decreases from 100%.
た後、再度５０％以下の値をとりその後零になることを
特徴とするプラズマ薄膜の製造方法。(3) A method for manufacturing a plasma thin film, characterized in that the change according to claim 1 once becomes zero from 100%, then takes a value of 50% or less again and then becomes zero.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17851689A JP2890494B2 (en) | 1989-07-11 | 1989-07-11 | Method for producing plasma thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17851689A JP2890494B2 (en) | 1989-07-11 | 1989-07-11 | Method for producing plasma thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0344472A true JPH0344472A (en) | 1991-02-26 |
| JP2890494B2 JP2890494B2 (en) | 1999-05-17 |
Family
ID=16049840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17851689A Expired - Lifetime JP2890494B2 (en) | 1989-07-11 | 1989-07-11 | Method for producing plasma thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2890494B2 (en) |
Cited By (318)
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| JPH0684888A (en) * | 1992-02-27 | 1994-03-25 | G T C:Kk | Formation of insulation film |
| US5637190A (en) * | 1995-09-15 | 1997-06-10 | Vanguard International Semiconductor Corporation | Plasma purge method for plasma process particle control |
| US6368977B1 (en) | 1999-06-30 | 2002-04-09 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method |
| JP2002176047A (en) * | 2000-09-26 | 2002-06-21 | Applied Materials Inc | Method of reducing plasma-induced damage |
| US6524955B2 (en) | 2000-03-27 | 2003-02-25 | Asm Japan K.K. | Method of forming thin film onto semiconductor substrate |
| JP2007077513A (en) * | 2006-12-11 | 2007-03-29 | Semiconductor Energy Lab Co Ltd | Film-forming method and method for producing thin-film transistor |
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