JPH0338084A - Connection of circuit board - Google Patents
Connection of circuit boardInfo
- Publication number
- JPH0338084A JPH0338084A JP1173658A JP17365889A JPH0338084A JP H0338084 A JPH0338084 A JP H0338084A JP 1173658 A JP1173658 A JP 1173658A JP 17365889 A JP17365889 A JP 17365889A JP H0338084 A JPH0338084 A JP H0338084A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- electrode
- electrodes
- conductive particles
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002245 particle Substances 0.000 claims abstract description 30
- 238000003825 pressing Methods 0.000 claims abstract description 5
- 239000000853 adhesive Substances 0.000 claims description 22
- 230000001070 adhesive effect Effects 0.000 claims description 22
- 238000000034 method Methods 0.000 abstract description 28
- 239000007767 bonding agent Substances 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 30
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000011295 pitch Substances 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920006311 Urethane elastomer Polymers 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- -1 metals Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
Landscapes
- Coupling Device And Connection With Printed Circuit (AREA)
- Combinations Of Printed Boards (AREA)
- Multi-Conductor Connections (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、突起した電極が形成された半導体基板、セラ
ミック基板、フレキシブル基板、−ガラス基板、あるい
はアリント基板などの回路基板を他の＠Ｎ基板に接続す
るために好適に実施される回路基板の接続方法に関する
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is useful for connecting a circuit board on which protruding electrodes are formed, such as a semiconductor substrate, a ceramic substrate, a flexible substrate, a glass substrate, or an alint substrate, to another @N substrate. The present invention relates to a circuit board connection method suitably implemented for connection.
従来の技術
従来、上記各種の回路基板の金属突起電極を他の回路基
板の電極に接続する方法としては、突起１！極を接続す
べき回路基板のｔ極材料として、突起ａ４極材料との合
金化が可能な材料を用い、電極間を金属接合する方法が
用いられている。しかしながら、この方法によると、突
起電極を接続すべき回路基板の電極材料が限定されるた
め、近年、金属突起電極を回路基板電極上に直接または
異方導電性材料を介して圧接することにより電気的接続
を得る手法が提案されている。BACKGROUND OF THE INVENTION Conventionally, as a method for connecting metal protruding electrodes of the various circuit boards mentioned above to electrodes of other circuit boards, protrusions 1! A method is used in which a material that can be alloyed with the protrusion a4 pole material is used as the t-pole material of the circuit board to which the poles are connected, and the electrodes are metal-bonded. However, according to this method, the electrode material of the circuit board to which the protruding electrode should be connected is limited, so in recent years, metal protruding electrodes have been pressure-bonded onto the circuit board electrodes either directly or through an anisotropic conductive material. A method has been proposed to obtain physical connections.
発明が解決しようとする課題
しかしながら、上記接続法では、前者は金属突起電極の
高さのばらつきによる接続の不安定を解消するために過
大な圧力を電極部に加え突起ｔｉを変形させる必要があ
り、回路基板に損傷を与えることがあるという問題点が
あり、また挟者は異方導、電性材料を用いるため、分解
能が悪く微少ピッチ電極接続においては接続抵抗の安定
１ヒが困難であるという問題点がある。Problems to be Solved by the Invention However, in the above connection method, it is necessary to apply excessive pressure to the electrode part to deform the protrusion ti in order to eliminate connection instability caused by variations in the height of the metal protrusion electrode. However, there is a problem that it may damage the circuit board, and since the sandwicher uses an anisotropically conductive or electrically conductive material, the resolution is poor and it is difficult to stabilize the connection resistance when connecting micropitch electrodes. There is a problem.
本発明の目的は、上記問題点を解決して、金属突起電極
を有する回路基板を゛任意の１！極材料を有する他の回
路基板上に、角回路基板に損傷を与えることなく、微少
ピッチ接続においても常に安定した状態で接続すること
である。An object of the present invention is to solve the above-mentioned problems and provide an arbitrary circuit board having metal protruding electrodes. To connect a square circuit board to another circuit board having a pole material in a stable state even in minute pitch connections without damaging the square circuit board.
課題を解決するための手段
本発明は、突起電極を有する第１の回路基板と、この第
１の回路基板の突起電極と対応する位置に電極が形成さ
れた第２の回路基板とを接続する際に、
第１の回路基板の突起＄極上に選択的に接着剤を塗布す
る工程と、
この接着剤に導電性粒子を付着させる工程と、上記角回
路基板を対向して加圧して、突起電極を、導電性粒子を
介して前記対応する位置の電極に電気的に導通させる工
程と、
この状態で上記接着剤を硬化する工程とを含むことを特
徴とする回路基板の接続方法である。Means for Solving the Problems The present invention connects a first circuit board having protruding electrodes and a second circuit board having electrodes formed at positions corresponding to the protruding electrodes on the first circuit board. In this process, the process includes a step of selectively applying an adhesive to the top of the protrusion of the first circuit board, a step of attaching conductive particles to the adhesive, and pressing the square circuit board facing each other to remove the protrusion. A method for connecting circuit boards, comprising the steps of: electrically connecting an electrode to the corresponding electrode through conductive particles; and curing the adhesive in this state.
作 用
本発明に従う回路基板の接続方法においては、先ず突起
電極を有する第１の回路基板の突起電極上に選択的に接
着剤を塗布し、次にこの接着剤上に導電性粒子を付着さ
せる０次に、この第１の回路基板の突起電極と対応する
位置に電極が形成された第２の回Ｗ＠基板と第１の回路
基板を対向させて相互に加圧する。この状態で、第１の
回路基板上の導電性粒子が変形することがあり、接着剤
の一部が第２の回路基板の′Ｘｆｆ！上に付着する。そ
して、この状態で接着剤を硬化することにより角回路基
板を固定する。Function: In the circuit board connection method according to the present invention, an adhesive is first selectively applied onto the protruding electrodes of a first circuit board having protruding electrodes, and then conductive particles are adhered onto the adhesive. Next, a second circuit board having electrodes formed at positions corresponding to the protruding electrodes of the first circuit board and the first circuit board are placed facing each other and pressed together. In this state, the conductive particles on the first circuit board may be deformed, and some of the adhesive may be transferred to 'Xff!' on the second circuit board. Adhere to the top. Then, the square circuit board is fixed by curing the adhesive in this state.
したがって、本発明によれば、たとえ突起電極に高さの
ばらつきが生じていたとしても接続時に導電性粒子が変
形しそれを吸収するため５回路基板に損傷を与えること
なく安定した接続を得ることができる。また、導電性粒
子が電極部のみに高密度に配置されるため微少ピッチの
電極接続が可能である。Therefore, according to the present invention, even if there is a height variation in the protruding electrodes, the conductive particles deform and absorb it during connection, so that a stable connection can be obtained without damaging the circuit board. I can do it. Further, since the conductive particles are arranged at a high density only in the electrode portions, it is possible to connect the electrodes at a minute pitch.
実施例
第１図は、本発明に従って電極の接続が行われた回路基
板１１．１２の構成を示す断面図である。Embodiment FIG. 1 is a sectional view showing the structure of a circuit board 11, 12 on which electrode connections are made according to the present invention.
集積回路などの半導体回路基板１１は、シリコンあるい
はガリウムヒ素などの基板上に拡散層が形成され、これ
によって多数のトランジスタやダイオードなどが形成さ
れている。半導体回路基板１１の一方表面には、回路基
板１２と接続される突起′：４極１極所３成されている
１回路基板１２の一方表面には、前記電極１３に対応す
る位置に対応した大きさで電極１４が形成されている。A semiconductor circuit board 11 such as an integrated circuit has a diffusion layer formed on a substrate such as silicon or gallium arsenide, and a large number of transistors, diodes, etc. are formed thereby. On one surface of the semiconductor circuit board 11, there are three protrusions connected to the circuit board 12: four poles and one pole.On one surface of the circuit board 12, there are protrusions connected to the circuit board 12 at positions corresponding to the electrodes 13. The electrode 14 is formed according to the size.
半導体回路基板１１の最上層には電極１５が形成さｈ、
電極１５の一部分および電極が設けられていない部分に
は、たとえばＳｊＮ、ＳｉＯ，あるいはポリイミドなど
から成る表面保護層２ｏがＦＩＬ）ｆｆされている。電
極１５は、たとえばＡｌ−８ｉ含金。An electrode 15 is formed on the top layer of the semiconductor circuit board 11 h,
A surface protective layer 2o made of, for example, SjN, SiO, or polyimide is applied to a portion of the electrode 15 and a portion where no electrode is provided. The electrode 15 includes, for example, Al-8i metal.
ｐ４ ｉ 、 Ｔ ｉあるいはＷなどから成る。Consists of p4i, Ti, W, etc.
さらに半導体回路基板１１の電極１５上には、中間量ｊ
Ｊｃ層１９−を介してたとえばＡｕおよびＡ ｕめっき
されｆ、２ Ｃｕから成る突起１８が形成さｈている。Further, on the electrode 15 of the semiconductor circuit board 11, an intermediate amount j
A protrusion 18 made of, for example, Au and Au plated f,2 Cu is formed through the Jc layer 19-.
中間＆成層１９は、本実施例では電［！１５側のバリア
メタル層１６と、突起１８側の密着層１７とから成る。In this embodiment, the intermediate & stratified layer 19 is an electric [! It consists of a barrier metal layer 16 on the 15 side and an adhesion layer 17 on the protrusion 18 side.
密着層１７は、突起１８との密着性を向上するためのも
のであり、たとえばＣＬｌ 。The adhesion layer 17 is for improving adhesion with the protrusion 18, and is made of, for example, CLl.
Ｎｉ、Ａｕ、Ａｇ、Ｐｔなどの金属およびそれらの合金
を用いることができる。バリアメタル層１６は、前記密
着層１７上に設けられる突起１８が拡散して電極１５と
反応するのを防止するためのものであり、たとえばＴｉ
、Ｗ、Ｃｒなとの１ｆＬＷわよびそれらのき金が使用で
きる。これら電極１５、中間金属層１９および突起１８
を含んで突起電極１３が構成される。突起型［ｉ１３の
高さｈは、たとえば５〜３０μｍである。Metals such as Ni, Au, Ag, Pt, and alloys thereof can be used. The barrier metal layer 16 is for preventing the projections 18 provided on the adhesive layer 17 from diffusing and reacting with the electrodes 15, and is made of, for example, Ti.
, W, Cr, etc. and their base metals can be used. These electrodes 15, intermediate metal layer 19 and protrusions 18
The protruding electrode 13 includes the above. The height h of the protrusion type [i13 is, for example, 5 to 30 μm.
上述した突起電極１３が形成された半導体回路基Ｗ、１
１は、回路基板１２の対応する電極１４に対向した状態
で、たとえば５〜２０μｍ中の外径を有する導電性粒子
２１を介して電気的に接続され、接着剤２２によりこ！
Ｌらが固定されている。Semiconductor circuit board W, 1 on which the above-mentioned protruding electrode 13 is formed
1 are electrically connected to the corresponding electrodes 14 of the circuit board 12 via conductive particles 21 having an outer diameter of, for example, 5 to 20 μm, and are connected by an adhesive 22!
L et al. are fixed.
導電性粒子２１は、Ａｕ、Ａｇ、Ｐｔ、Ｃｕ、Ｎｉ 、
Ｃ、Ｉ ｒＩ、 Ｓ ｒｔ 、 Ｐ ｂ １３よびＰ
ｄなとの金属、あるい６まこれらの２種類以上のき金を
使用することができる。The conductive particles 21 include Au, Ag, Pt, Cu, Ni,
C, I rI, S rt , P b 13 and P
It is possible to use two or more types of metals, such as metals, or two or more of these metals.
また、第２図に示したように、高分子材料がら成る弾性
粒子２１ｂの表面に導電性材料がら成る波７１層２１ａ
を形成した導電性粒子２１を用いてもよい、この場合、
弾性粒子２１ｂとしてはポリイミド系樹脂、エポキシ系
樹脂、アクリル系樹脂などの合成樹脂およびシリコンゴ
ム、ウレタンゴムなどの１或ゴムが使用できる。また、
被覆層２１ａの導電性材料としては、Ａｕ、Ａｇ、ＰＬ
。Further, as shown in FIG. 2, a wave 71 layer 21a made of a conductive material is formed on the surface of the elastic particle 21b made of a polymeric material.
It is also possible to use conductive particles 21 formed with
As the elastic particles 21b, synthetic resins such as polyimide resins, epoxy resins, and acrylic resins, and rubbers such as silicone rubber and urethane rubber can be used. Also,
The conductive material of the coating layer 21a includes Au, Ag, and PL.
.
Ｃｕ、Ｎｉ 、Ｃ，Ｉ ｒｒ、Ｓｒ＋、ＰｂおよびＰｄ
などの金属あるいはこれらの合金を１層もしくは２層以
上として使用することができる。２層以上で被覆層２１
ａを形成する場１には、弾性粒子２１ｂ／＼の密着性
に浸れる、たとえばＮｉなどの金属層を先に形成し、Ａ
ｕなどの金属層を被覆することが好ましい、被覆の方法
としては、スパッタリング法、エレクトロンビー２１法
、あるいは無電界めっきなどの方法を用いることができ
る。Cu, Ni, C, Irr, Sr+, Pb and Pd
Metals such as or alloys thereof can be used as one layer or two or more layers. Covering layer 21 with two or more layers
In field 1 where A is formed, a metal layer such as Ni, which can be absorbed into the adhesion of the elastic particles 21b/\, is first formed, and then A is formed.
It is preferable to coat the metal layer such as u, and as a coating method, a method such as a sputtering method, an electron beam 21 method, or an electroless plating method can be used.
接着剤２２は、たとえばアクリル系樹脂、ポリエステル
系樹脂、ウレタン系樹脂、エポキシ系樹脂、あるいはシ
リコーン系樹脂などの各８ｉｂ成樹脂を使用することが
できる。As the adhesive 22, 8ib resins such as acrylic resin, polyester resin, urethane resin, epoxy resin, or silicone resin can be used.
第３図および第４図を参照して、以下に本発明の回路基
板の接続方法について説明する。Referring to FIGS. 3 and 4, the method for connecting circuit boards of the present invention will be described below.
第３図は、半導体回路基板１１上に突起電極１３を形成
する工程を説明するための断面図である。FIG. 3 is a cross-sectional view for explaining the process of forming the protruding electrode 13 on the semiconductor circuit board 11.
第３図（１）に示されるように、半導体回路基板ｌｌ上
には予め電％１５が形成されており、電極１５の周囲は
表面保護層２０によって被覆されている。先ず、半導体
回路基板１１の電極１５を含む表面上に、突起電極を形
成するための中間金属層１９をスパッタリング法やエレ
クトロンビーム法などの蒸着法、またはめつき法などに
よって形成する８本実施例では、中間金属層１９は２層
構造とし、「（上層１７）／（下層１６）」と表記した
４合、Ａｕ （８００人） ／ Ｔ ｉ ・Ｗ合金（２
４００人）構造を用いた。As shown in FIG. 3(1), an electrode 15 is previously formed on the semiconductor circuit board 11, and the periphery of the electrode 15 is covered with a surface protective layer 20. First, an intermediate metal layer 19 for forming protruding electrodes is formed on the surface of the semiconductor circuit board 11 including the electrodes 15 by a vapor deposition method such as a sputtering method or an electron beam method, or a plating method. In this case, the intermediate metal layer 19 has a two-layer structure, and is made of 4 layers of Au (800 layers) / T i ・W alloy (2
400 people) structure was used.
次に、第３図（２）〜第３図〈５〉に示されるように、
突起＄極１３を形成すべき所定の領域に、フォトプロセ
ス、めっきプロセス、エツチングプロセスを用いて突起
１８を形成する。Next, as shown in Figure 3 (2) to Figure 3 <5>,
A protrusion 18 is formed in a predetermined region where the protrusion $ pole 13 is to be formed using a photo process, a plating process, or an etching process.
先ず、第３１１Ｊ（２）に示されるように、中間金属層
１９が形成された半導体回路幕板ｌｌ上に、フォト・レ
ジスト膜２３をスピンコードまたはロールコート、ある
いは印刷などの方法によって塗布する。First, as shown in No. 311J(2), a photoresist film 23 is coated on the semiconductor circuit board 11 on which the intermediate metal layer 19 is formed by a method such as a spin code, roll coating, or printing.
次に、第３［ＩＪ（３）に示されるように、フォトレジ
乙ト膜２３の電極１５に対応した領域を露光し、現像す
ることによって所望の大きさぁよび形成を有する開口部
２４のバターニングを行う。Next, as shown in the third IJ (3), a region of the photoresist film 23 corresponding to the electrode 15 is exposed and developed to form the opening 24 with desired size and formation. ning.
次に、第３［ｆｆ１（４）に示されろように、前記バタ
ーニングによって形成された開口部２４を介して、たと
えばＡ ｌｌめっき液を用いて電気力っきを行い、突起
１８を形成する。その後、フォトレジストＷｉ２３を除
去することによって、第３図（５）に示される形状の突
起１８が半導体回路基板１１上に形成される。Next, as shown in the third [ff1(4)], electric plating is performed using, for example, an All plating solution through the opening 24 formed by the buttering to form the protrusion 18. do. Thereafter, by removing the photoresist Wi23, a protrusion 18 having the shape shown in FIG. 3(5) is formed on the semiconductor circuit board 11.
第３０（６）および第３図（７）に才）いては、上記方
法によって形成された突起１８をマスクとして、突起電
極１３を形成する部分以外の中間金属層１９をエツチン
グ除去する。すなわち本実施例では、中間金属層１９と
してＡｕ（上７ＦＩ１７）／Ｔｉ−Ｗ（下層１６）を用
い、突起１８はＡｕを用いているので、上層１７である
Ａｕの［／１液（エッチャント〉としてヨウ化カリウム
系エッチャントを珀い、下層１６であるＴｉ−Ｗの腐食
液としては、過酸化水素系エッチャントを用いて中間金
属層１９をエツチング除去する。ここで、中間金属層１
９の内、上層１７は突起１８と同じＡＵであるため、上
層１７のエツチング時に突起１８の表面がエツチングさ
れるが、上層１７のＡ ｕの厚さは８００人と薄いため
、突起１８表面のニッチング量はわずかであり、プロセ
ス上何等問題は生じない、これによって、突起電極１３
が半導体回路基板１１上に形成される。30(6) and 3(7)), using the protrusion 18 formed by the above method as a mask, the intermediate metal layer 19 other than the portion where the protrusion electrode 13 is to be formed is removed by etching. That is, in this embodiment, since Au (upper 7 FI 17)/Ti-W (lower layer 16) is used as the intermediate metal layer 19 and Au is used for the protrusion 18, the upper layer 17 of Au [/1 liquid (etchant)] is used. The intermediate metal layer 19 is etched and removed using a potassium iodide-based etchant as the etching agent and a hydrogen peroxide-based etchant as the etching solution for Ti--W, which is the lower layer 16.
9, the upper layer 17 has the same AU as the protrusion 18, so the surface of the protrusion 18 is etched when the upper layer 17 is etched. The amount of nitching is small and does not cause any problems in the process.
is formed on the semiconductor circuit board 11.
次に、第４図を参照して、上述のようにして突起５Ｔｕ
ｆｉ１３が形成された半導体回路基板１１を対応する電
極１４が形成された回路基Ｗ、１２に接続する方法を説
明する。Next, referring to FIG. 4, the protrusion 5Tu is
A method of connecting the semiconductor circuit board 11 on which the fi 13 is formed to the circuit board W, 12 on which the corresponding electrode 14 is formed will be explained.
先ず、第４図（１〉に示されるように５接着剤供給基板
２５上にたとえばスピ〉・コート、ロールコートあるい
は印刷などの方法によって接着剤層２２ａを形成する。First, as shown in FIG. 4(1), an adhesive layer 22a is formed on the adhesive supply substrate 25 by a method such as spin coating, roll coating, or printing.
接着剤としては、前述の如くの材料より成る熱硬化性、
光硬化性等の接着剤を用０ることができる。As adhesives, thermosetting materials made of the materials mentioned above,
A photocurable adhesive or the like can be used.
次に、第４図（２）に示されるように、接着剤供給基板
２５の接着剤Ｎ ２２ ａ上に、半導体回路基板１１の
突起電極１３を押圧することにより、突起電極１３上に
接着剤２２を付着させる。Next, as shown in FIG. 4(2), by pressing the protruding electrode 13 of the semiconductor circuit board 11 onto the adhesive N 22 a of the adhesive supply board 25, the adhesive is applied onto the protruding electrode 13. 22 is attached.
次に、第４図（３）に示されるように、この様にして接
着剤２２を付着させた半導体回路基板１１上の突起電極
１３を、導電性粒子供給基板２６上にほぼ均一に配置さ
れた導電性粒子２１上に第４図（４）のように押圧する
ことにより、接着剤２２の粘着力を利用して突起電極１
３に導電性粒子２１を第４図（５〉のように付着させる
。ここで、接着剤供給基板２５上の接着剤層２２ａの厚
さ（１）は、導電性粒子２１の寸法（ｄ）に応じて適切
に選択する必要があり、通常１ ＝ｄ／２とすることが
好ましい、たとえばｄ＝５〜２０μｍである。Next, as shown in FIG. 4(3), the protruding electrodes 13 on the semiconductor circuit board 11 to which the adhesive 22 has been attached in this manner are arranged almost uniformly on the conductive particle supply substrate 26. By pressing the conductive particles 21 onto the conductive particles 21 as shown in FIG.
3, the conductive particles 21 are attached to the conductive particles 21 as shown in FIG. It is necessary to select it appropriately depending on the value, and it is usually preferable to set 1 = d/2, for example, d = 5 to 20 μm.
次に、第４図（６）に示されるように、この様にして導
電性粒子２１を付着させた半導体回路基板ｌｌ上の突起
を極１３を、対応する電極１４が形成された回路基板１
２上に位置合せした後、加圧する。この加圧により、導
電性粒子２１は突起電極１３の高さのばらつきを吸収す
るように変形し、全ての突起電極１３が対応する電極１
４と電気的に接続される。また、この状態で導電性粒子
２１が変形するため、接着剤２２の一部が流動し、回路
基板１２上の電極１４上を被覆する。Next, as shown in FIG. 4(6), the protrusions on the semiconductor circuit board 11 on which the conductive particles 21 have been attached in this manner are connected to the poles 13 on the circuit board 1 on which the corresponding electrodes 14 are formed.
After aligning on 2, apply pressure. Due to this pressurization, the conductive particles 21 are deformed so as to absorb variations in the height of the protruding electrodes 13, and all the protruding electrodes 13 correspond to the corresponding electrodes 1.
It is electrically connected to 4. Furthermore, since the conductive particles 21 are deformed in this state, a portion of the adhesive 22 flows and covers the electrodes 14 on the circuit board 12.
次に、この状態で接着剤２２を硬化することにより、両
回路基板１１．１２の接続および固定が完了する。Next, by curing the adhesive 22 in this state, the connection and fixation of both circuit boards 11 and 12 is completed.
上記実施例においては、突起電極を形成した半導体回路
基板を他の回路基板と接続する場合について説明したが
、半導体回路基板に限定する必要はなく、池の回路基板
においても本発明は実施することができる。In the above embodiments, a case has been described in which a semiconductor circuit board on which protruding electrodes are formed is connected to another circuit board, but it is not necessary to limit it to semiconductor circuit boards, and the present invention can also be implemented on other circuit boards. I can do it.
発明の詳細
な説明したように本発明によれば、突起ｔＩ［Ｉを導電
性粒子を介して対応する電極に加圧接続するため、突起
電極を任意の電極材料に接続することが可能である。ま
た、たとえ突起１に極に高さのばらつきを生じていたと
しても、接続時に導電性粒子が変形し、それを吸収させ
ることが可能であるため、回路基板に損傷を与えること
なく、安定した接続を得ることができる。さらに、導電
性粒子が電極部のみに高密度に配置されるため、安定し
た微少ピッチのｔｉ接続が可能である。DETAILED DESCRIPTION OF THE INVENTION According to the present invention, the protrusions tI[I are connected to the corresponding electrodes through conductive particles under pressure, so that it is possible to connect the protrusion electrodes to any electrode material. . In addition, even if there is variation in the height of the protrusion 1, the conductive particles are deformed during connection and can be absorbed, so it is possible to maintain a stable structure without damaging the circuit board. You can get a connection. Furthermore, since the conductive particles are arranged at a high density only in the electrode portions, stable Ti connections with fine pitches are possible.
第１図は本発明に従って接続された回路基［１１，１２
のＴ４極接続構造を説明する断面図、第２図は本発明に
用いる導電性粒子２１の断面図、第３図は突起電極１３
の形成方法を説明する断面図、第４図は本発明による両
回路基板１１．１２の接続方法を説明する断面図である
。
１１・・・半導体回路基板、１２・・・回路基板、１３
・・・突起電極、１４・・・′ｒｈ極、２１・・・導電
性粒子、２２・・・接着剤
第
図
藪FIG. 1 shows circuit boards [11, 12
FIG. 2 is a cross-sectional view of the conductive particles 21 used in the present invention, and FIG. 3 is a cross-sectional view of the protruding electrode 13.
FIG. 4 is a sectional view illustrating a method of forming both circuit boards 11 and 12 according to the present invention. 11... Semiconductor circuit board, 12... Circuit board, 13
... protruding electrode, 14...'rh pole, 21... conductive particles, 22... adhesive diagram
Claims (1)
基板の突起電極と対応する位置に電極が形成された第２
の回路基板とを接続する際に、第１の回路基板の突起電
極上に選択的に接着剤を塗布する工程と、 この接着剤に導電性粒子を付着させる工程と、上記両回
路基板を対向して加圧して、突起電極を、導電性粒子を
介して前記対応する位置の電極に電気的に導通させる工
程と、 この状態で上記接着剤を硬化する工程とを含むことを特
徴とする回路基板の接続方法。[Claims] A first circuit board having a protruding electrode, and a second circuit board having an electrode formed at a position corresponding to the protruding electrode on the first circuit board.
When connecting the first circuit board to the first circuit board, a step of selectively applying an adhesive onto the protruding electrodes of the first circuit board, a step of attaching conductive particles to the adhesive, and a step of placing the two circuit boards facing each other. and applying pressure to electrically connect the protruding electrode to the electrode at the corresponding position via the conductive particles, and curing the adhesive in this state. How to connect the board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1173658A JPH0338084A (en) | 1989-07-04 | 1989-07-04 | Connection of circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1173658A JPH0338084A (en) | 1989-07-04 | 1989-07-04 | Connection of circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0338084A true JPH0338084A (en) | 1991-02-19 |
Family
ID=15964698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1173658A Pending JPH0338084A (en) | 1989-07-04 | 1989-07-04 | Connection of circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0338084A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05152706A (en) * | 1991-11-28 | 1993-06-18 | Matsushita Electric Works Ltd | Mounting structure of circuit board |
| US5561593A (en) * | 1994-01-27 | 1996-10-01 | Vicon Enterprises, Inc. | Z-interface-board |
| JP2002170840A (en) * | 2000-09-25 | 2002-06-14 | Ibiden Co Ltd | Manufacturing method of semiconductor device and multi-layer printed circuit board including the same |
| JP2002246761A (en) * | 2000-12-15 | 2002-08-30 | Ibiden Co Ltd | Multilayer printed circuit board containing semiconductor elements |
| JP2002246758A (en) * | 2000-12-15 | 2002-08-30 | Ibiden Co Ltd | Printed-wiring board |
| KR20050034511A (en) * | 2003-10-16 | 2005-04-14 | 정용현 | A fixing & standing apparatus for rotate wheel with the brake-pad shaft of in-line skate |
| US7999387B2 (en) | 2000-09-25 | 2011-08-16 | Ibiden Co., Ltd. | Semiconductor element connected to printed circuit board |
| US8079142B2 (en) | 2000-02-25 | 2011-12-20 | Ibiden Co., Ltd. | Printed circuit board manufacturing method |
-
1989
- 1989-07-04 JP JP1173658A patent/JPH0338084A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05152706A (en) * | 1991-11-28 | 1993-06-18 | Matsushita Electric Works Ltd | Mounting structure of circuit board |
| US5561593A (en) * | 1994-01-27 | 1996-10-01 | Vicon Enterprises, Inc. | Z-interface-board |
| US8079142B2 (en) | 2000-02-25 | 2011-12-20 | Ibiden Co., Ltd. | Printed circuit board manufacturing method |
| US8186045B2 (en) | 2000-02-25 | 2012-05-29 | Ibiden Co., Ltd. | Multilayer printed circuit board and multilayer printed circuit board manufacturing method |
| US8438727B2 (en) | 2000-02-25 | 2013-05-14 | Ibiden Co., Ltd. | Multilayer printed circuit board and multilayer printed circuit board manufacturing method |
| JP2002170840A (en) * | 2000-09-25 | 2002-06-14 | Ibiden Co Ltd | Manufacturing method of semiconductor device and multi-layer printed circuit board including the same |
| US7999387B2 (en) | 2000-09-25 | 2011-08-16 | Ibiden Co., Ltd. | Semiconductor element connected to printed circuit board |
| JP2002246761A (en) * | 2000-12-15 | 2002-08-30 | Ibiden Co Ltd | Multilayer printed circuit board containing semiconductor elements |
| JP2002246758A (en) * | 2000-12-15 | 2002-08-30 | Ibiden Co Ltd | Printed-wiring board |
| KR20050034511A (en) * | 2003-10-16 | 2005-04-14 | 정용현 | A fixing & standing apparatus for rotate wheel with the brake-pad shaft of in-line skate |
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